CN118867831B - A method for manufacturing an electro-absorption modulated laser and an electro-absorption modulated laser - Google Patents
A method for manufacturing an electro-absorption modulated laser and an electro-absorption modulated laser Download PDFInfo
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- CN118867831B CN118867831B CN202411329325.4A CN202411329325A CN118867831B CN 118867831 B CN118867831 B CN 118867831B CN 202411329325 A CN202411329325 A CN 202411329325A CN 118867831 B CN118867831 B CN 118867831B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
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Abstract
The invention relates to the technical field of laser manufacturing, in particular to a manufacturing method of an electroabsorption modulation laser and the electroabsorption modulation laser. The manufacturing method comprises the steps of providing a multi-quantum well structure, wherein the multi-quantum well structure comprises an electroabsorption modulation region, a waveguide region and a laser light source region, the waveguide region is located between the electroabsorption modulation region and the laser light source region, an isolation protection layer is formed on the multi-quantum well structure, covers the electroabsorption modulation region and the laser light source region and exposes the waveguide region, a dielectric film layer is formed, covers the isolation protection layer of the electroabsorption modulation region and the laser light source region and the waveguide region, annealing is mixed, and the multi-quantum well structure with the dielectric film layer is annealed. The manufacturing method of the invention can solve the problems of crystal quality degradation and damage of residual defects to an epitaxial layer caused by long-time high-temperature annealing when manufacturing an InGaAlAs-based electroabsorption modulation laser by a quantum well hybrid method in the prior art.
Description
Technical Field
The invention relates to the technical field of laser manufacturing, in particular to a manufacturing method of an electroabsorption modulation laser and the electroabsorption modulation laser.
Background
An electroabsorption modulation laser (Electro-absorption Modulated Laser, EML) integrates a laser (usually a DFB laser light source) and an electroabsorption modulator (Electro-absorption Modulator, EAM) on a single chip, is a high-performance optical chip for communication with small volume, high integration level and low wavelength chirp, and is a preferred light source for high-speed optical communication systems at home and abroad.
For EML fabrication, one of the most preferred active layers at present is the inagaas-based Multiple Quantum Well (MQW) layer. Compared to InGaAsP, inagaas is widely used as an MQW material due to its larger conduction band offset and smaller valence band offset. These advantages result in an EAM based on inagaas with superior high temperature performance and better Extinction Ratio (ER). However, inAlGaAs multiple quantum wells are not suitable for conventional Butt-regrowth (Butt-Joint) processes. The butt-growth process requires deep etching and regrowth of multiple MQW regions (e.g., laser light sources, EAMs, and waveguide regions). However, inGaAlAs containing aluminum is very susceptible to oxidation, which results in deterioration of laser performance and degradation of device reliability. In addition, the butt-growth process requires precise control of the etching and regeneration of the long strips to achieve a high quality butt-joint interface between the individual integrated components, thereby reducing scattering losses. The complexity of the chip manufacturing process is greatly increased, the yield and the cost of the chip are directly affected, and the large-scale production is not facilitated.
One common EML fabrication process in the prior art is Quantum Well Intermixing (QWI). Typically the QWI process involves sputtering of the dielectric film after growth of the p-type protective layer, is over 1 μm thick, and requires a long high temperature anneal to induce quantum well intermixing in the EAM region. This process may cause problems such as degradation of crystal quality and damage to the epitaxial layer by residual defects, and it is difficult to achieve mass-reproducible production.
Disclosure of Invention
Therefore, the invention provides a manufacturing method of an electroabsorption modulated laser and the electroabsorption modulated laser, which are used for solving the problems that the quality of crystals is reduced and residual defects damage an epitaxial layer due to long-time high-temperature annealing when manufacturing an InGaAlAs-based electroabsorption modulated laser by a quantum well hybrid method in the prior art.
The invention provides a manufacturing method of an electroabsorption modulation laser, which comprises the following steps of providing a multi-quantum well structure, wherein the multi-quantum well structure comprises an electroabsorption modulation region, a waveguide region and a laser light source region, the waveguide region is positioned between the electroabsorption modulation region and the laser light source region, the multi-quantum well structure at least comprises barrier layers and InGaAlAs quantum well layers which are alternately stacked, an isolation protection layer is formed on the multi-quantum well structure, the isolation protection layer covers the electroabsorption modulation region and the laser light source region, the waveguide region, a dielectric film layer is formed, the dielectric film layer covers the isolation protection layer of the electroabsorption modulation region and the laser light source region and exposes the waveguide region, in the process of forming the dielectric film layer, an interface between the dielectric film layer of the waveguide region and a film layer below the waveguide region is damaged to generate vacancy defects, the dielectric film layer is an undoped insulating dielectric film layer, annealing is performed on the multi-quantum well structure, annealing is performed on the quantum well structure forming the dielectric film layer, the dielectric film layer covers the electroabsorption modulation region and the isolation protection layer covers the electroabsorption modulation region and the laser light source region, the waveguide layer is formed, and the interface between the dielectric film layer and the InGaAlAs quantum well layer is formed and the mixed layer.
Optionally, the step of forming the dielectric film layer comprises a sputtering deposition process, wherein the material of the dielectric film layer comprises SiO 2 or SiN x, and the thickness of the dielectric film layer is 50-80 nm.
Optionally, the step of forming the isolation protection layer includes forming an initial isolation protection layer by a first growth process, wherein the initial isolation protection layer covers the whole surface of the multiple quantum well structure, removing the initial isolation protection layer located in the waveguide region by a first etching process, forming the isolation protection layer covering the electroabsorption modulation region and the laser light source region, and exposing the waveguide region.
Optionally, the first growing process comprises plasma enhanced chemical vapor deposition or metal organic chemical vapor deposition, and the first etching process comprises photoetching and/or wet etching and/or dry etching.
Optionally, the step of providing the multi-quantum well structure comprises the steps of providing a laser substrate, forming barrier layers and InGaAlAs quantum well layers which are alternately stacked on the laser substrate, forming a grating layer 310 and a P-type InP protective layer on the alternately stacked film layers, wherein the grating layer 310 is only located in the laser light source region, the P-type InP protective layer covers the whole surface of the lower film layer and covers the grating layer 310, an InGaAs sacrificial layer is formed on the grating layer 310 and the P-type InP protective layer, and the isolation protective layer and the dielectric film layer are formed on the InGaAs sacrificial layer.
The manufacturing method of the electric absorption modulation laser comprises the steps of carrying out annealing mixing, removing the InGaAs sacrificial layer, the isolation protective layer and the dielectric film layer, forming a P-type InP cover layer on the grating layer and the P-type InP protective layer, etching the electric absorption modulation region, the laser light source region and the waveguide region to form a ridge waveguide structure, forming a side protective layer on the side part of the ridge waveguide structure, forming an InGaAs contact layer on the surfaces of the P-type InP cover layer of the electric absorption modulation region and the laser light source region, evaporating P-type metal on the surfaces of the InGaAs contact layer, evaporating N-type metal on the surfaces of the laser substrate, forming an ohmic contact electrode on the surfaces of the InGaAs contact layer, or etching a mesa structure on the electric absorption modulation region, the laser light source region and the waveguide region, forming a semi-insulating barrier layer and an N-type barrier layer on the side part of the mesa structure by secondary epitaxy, forming a P-type InP cover layer and an electric absorption modulation region and an N-type InP layer on the surfaces of the mesa structure, forming an electric absorption modulation region and an InP-type InP layer on the surfaces of the laser light source region, evaporating N-type InP layer on the surfaces of the electric absorption modulation region and the laser light source region, and forming an ohmic contact electrode on the surface of the InGaAs contact layer, or forming an ohmic contact electrode on the buried hetero structure.
Optionally, in the annealing and mixing step, the annealing temperature is 650 ℃ to 750 ℃ and the annealing time is 100s to 140s.
The invention also provides an electroabsorption modulation laser which is manufactured by using the manufacturing method of the electroabsorption modulation laser provided by the invention, and the electroabsorption modulation laser comprises a multi-quantum well structure, wherein the multi-quantum well structure comprises an electroabsorption modulation region, a waveguide region and a laser light source region, the waveguide region is positioned between the electroabsorption modulation region and the laser light source region, the multi-quantum well structure at least comprises barrier layers and InGaAlAs quantum well layers which are alternately stacked, and the multi-quantum well structure further comprises a quantum well mixed layer region which is positioned in the waveguide region and is in the same layer with the barrier layers and the InGaAlAs quantum well layers which are alternately stacked.
Optionally, the multiple quantum well structure comprises a laser substrate, a barrier layer and an InGaAlAs quantum well layer which are alternately stacked on the laser substrate, a quantum well mixed layer region which is the same as the barrier layer and the InGaAlAs quantum well layer which are alternately stacked, a grating layer 310 and a P-type InP protection layer which are positioned on the barrier layer and the InGaAlAs quantum well layer which are alternately stacked and the quantum well mixed layer region, wherein the grating layer 310 is only positioned in the laser light source region, and the P-type InP protection layer covers the whole surface of a lower film layer and coats the grating layer 310.
Optionally, the device with the ridge waveguide structure further comprises a P-type InP cover layer positioned on the grating layer 310 and the P-type InP cover layer, a ridge waveguide structure formed by the electric absorption modulation region, the laser light source region and the P-type InP cover layer of the waveguide region, a side surface protective layer positioned on the side part of the ridge waveguide structure, an InGaAs contact layer positioned on the surfaces of the electric absorption modulation region and the P-type InP cover layer of the laser light source region, a P-type metal electrode positioned on the surface of the InGaAs contact layer, and an N-type metal electrode positioned on the surface of the laser substrate;
Or the device with the buried heterojunction structure further comprises a mesa structure, a semi-insulating barrier layer and an N-type InP barrier layer which are positioned on two side parts of the mesa structure, a P-type InP covering layer and an insulating spacer layer which are positioned on the surface of the mesa structure, an InGaAs contact layer which is positioned on the surface of the P-type InP covering layer of the electroabsorption modulation region and the laser light source region, a P-type metal electrode which is positioned on the surface of the InGaAs contact layer, and an N-type metal electrode which is positioned on the surface of the laser substrate, wherein the mesa structure comprises the electroabsorption modulation region, the laser light source region and the partial height of the waveguide region, the barrier layer and the InGaAs quantum well layer which are alternately laminated on the laser substrate, the quantum well mixed layer region and all the grating layer 310 and the P-type InP protection layer.
The invention has the beneficial effects that:
The manufacturing method of the electro-absorption modulation laser comprises the steps of forming an isolation protection layer on the multi-quantum well structure, enabling the isolation protection layer to cover the electro-absorption modulation region and the laser light source region and expose the waveguide region, forming a dielectric film layer, enabling the dielectric film layer to cover the electro-absorption modulation region, the laser light source region and the waveguide region, enabling an interface between the dielectric film layer and the lower film layer located in the waveguide region to be damaged to generate vacancy defects in the forming process, enabling the dielectric film layer to be an undoped insulating dielectric film layer, enabling the interface between the dielectric film layer and the lower film layer to be damaged to generate vacancy defects when the multi-quantum well structure of the waveguide region is formed, and enabling other areas to be covered by the isolation protection layer to keep the interface intact. During subsequent annealing, vacancy defects in the waveguide region can rapidly diffuse into the quantum well of this region (i.e., alternately stacked barrier layers and InGaAlAs quantum well layers), causing intermixing of well atoms and barrier atoms in the quantum well and thus causing a change in the composition of the quantum well material. Unlike other ion implantation, impurity diffusion and other quantum well mixing methods, the impurity-free and hole-free enhanced disorder process adopted in the invention does not cause electrical and optical losses of the device, because the whole process has no impurity intervention, but the disorder degree of the lattice structure of the quantum well is changed. Meanwhile, only the extremely small area of the waveguide area is mixed with the quantum well, other areas including the laser light source area and the electroabsorption modulation area are protected by the isolation protection layer, the quantum well structure and the performance are not affected, the crystal quality is not reduced, and the problem of residual defects is avoided. The stability of the device is ensured to the greatest extent.
The electroabsorption modulated laser provided by the invention is manufactured by using the manufacturing method of the electroabsorption modulated laser provided by the invention. In the forming process, the interface between the dielectric film layer and the film layer below the dielectric film layer in the waveguide region is damaged to generate vacancy defects, the dielectric film layer is an undoped insulating dielectric film layer, the interface between the dielectric film layer and the film layer below the dielectric film layer is damaged to generate vacancy defects when the multi-quantum well structure of the waveguide region is formed by the dielectric film layer, and other areas are covered by an isolating protective layer to keep the interface intact. During subsequent annealing, vacancy defects in the waveguide region can rapidly diffuse into the quantum well of this region (i.e., alternately stacked barrier layers and InGaAlAs quantum well layers), causing intermixing of well atoms and barrier atoms in the quantum well and thus causing a change in the composition of the quantum well material. Unlike other ion implantation, impurity diffusion and other quantum well mixing methods, the impurity-free and hole-free enhanced disorder process adopted in the invention does not cause electrical and optical losses of the device, because the whole process has no impurity intervention, but the disorder degree of the lattice structure of the quantum well is changed. Meanwhile, only the extremely small area of the waveguide area is mixed with the quantum well, other areas including the laser light source area and the electroabsorption modulation area are protected by the isolation protection layer, the quantum well structure and the performance are not affected, the crystal quality is not reduced, and the problem of residual defects is avoided. The stability of the device is ensured to the greatest extent.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method of fabricating an electro-absorption modulated laser according to the present invention;
fig. 2 is a schematic diagram of a method for manufacturing an electroabsorption modulated laser according to an embodiment of the present invention, in which an InGaAs sacrificial layer is formed on the grating layer and the P-type InP protective layer;
FIG. 3 is a schematic diagram illustrating an embodiment of a method for forming an isolation passivation layer in a method for manufacturing an electro-absorption modulated laser according to the present invention;
FIG. 4 is a schematic diagram illustrating a dielectric film formed in a method for fabricating an electro-absorption modulated laser according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of forming a quantum well mixed layer region in a manufacturing method of an electro-absorption modulated laser according to an embodiment of the present invention;
Fig. 6 is a schematic diagram of a P-type InP cladding layer formed after a quantum well mixed layer region is formed in a method of fabricating an electro-absorption modulated laser according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of an InGaAs contact layer formed after a quantum well mixed layer region is formed in a method of fabricating an electro-absorption modulated laser according to an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of a ridge waveguide device formed after forming a quantum well intermixing layer in a method of fabricating an electro-absorption modulated laser according to an embodiment of the present invention;
Fig. 9 is a schematic cross-sectional view of a buried heterojunction device formed after formation of a quantum well intermixing layer in a method of fabricating an electro-absorption modulated laser according to an embodiment of the present invention.
Detailed Description
The invention provides a manufacturing method of an electro-absorption modulation laser and the electro-absorption modulation laser, which are used for solving the problems that the quality of crystals is reduced and the epitaxial layer is damaged by residual defects caused by long-time high-temperature annealing when the electro-absorption modulation laser of an InGaAlAs base is manufactured by a quantum well hybrid method in the prior art.
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. In the description of the present invention, it should be noted that the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Example 1
Referring to fig. 1 and fig. 2 to 5, the present embodiment provides a method for manufacturing an electro-absorption modulated laser, which includes the following steps:
The multi-quantum well structure comprises an electroabsorption modulation region A, a waveguide region B and a laser light source region C, wherein the waveguide region is positioned between the electroabsorption modulation region A and the laser light source region C;
Forming an isolation protection layer 500 on the multi-quantum well structure, wherein the isolation protection layer 500 covers the electroabsorption modulation region A and the laser light source region C and exposes the waveguide region B;
Forming a dielectric film layer 600, wherein the dielectric film layer 600 covers the isolation protection layer 500 of the electroabsorption modulation region A and the laser light source region C and the waveguide region B, and the interface between the dielectric film layer 600 and the film layer below the waveguide region B is damaged to generate vacancy defects in the forming process of the dielectric film layer 600, and the dielectric film layer 600 is an undoped insulating dielectric film layer;
Annealing and mixing, annealing the multi-quantum well structure formed with the dielectric film layer 600 to induce the change of the alternately laminated barrier layers and InGaAlAs quantum well layers 200 of the waveguide region B, and forming a quantum well mixed layer region 210 together.
Note that 200 in the drawing refers to an overall structure of alternately stacked barrier layers and InGaAlAs quantum well layers, and not to only InGaAlAs quantum well layers therein.
The manufacturing method of the electro-absorption modulated laser provided by the embodiment includes the steps of forming an isolation protection layer 500 on the multi-quantum well structure, wherein the isolation protection layer 500 covers the electro-absorption modulated region A and the laser light source region C and exposes the waveguide region B, forming a dielectric film layer 600, wherein the dielectric film layer 600 covers the electro-absorption modulated region A and the laser light source region C and the waveguide region B, in the forming process, the interface between the dielectric film layer 600 and the lower film layer of the waveguide region B is damaged to generate vacancy defects, the dielectric film layer 600 is an undoped insulating dielectric film layer, the interface between the dielectric film layer 600 and the lower film layer of the exposed waveguide region B is damaged to generate vacancy defects when the dielectric film layer 600 is formed, and other areas are covered by the isolation protection layer 500 to keep the interface intact. During the subsequent anneal, vacancy defects in waveguide region B can rapidly diffuse into the quantum well of this region (i.e., alternately stacked barrier layers and InGaAlAs quantum well layers 200), causing intermixing of well atoms and barrier atoms in the quantum well and thus a change in the composition of the quantum well material. Unlike other ion implantation, impurity diffusion and other quantum well mixing methods, the impurity-free and hole-free enhanced disorder process adopted in the invention does not cause electrical and optical losses of the device, because the whole process has no impurity intervention, but the disorder degree of the lattice structure of the quantum well is changed. Meanwhile, in the invention, only the very small area of the waveguide area B completes quantum well mixing, the rest areas including the laser light source area C and the electroabsorption modulation area A are all under the protection of the isolation protection layer 500, no matter the quantum well structure or the performance is affected, the crystal quality is not reduced, and the problem of residual defects is avoided. The stability of the device is ensured to the greatest extent.
Further, referring to fig. 2, the step of providing a multiple quantum well structure includes:
providing a laser substrate 100, wherein the laser substrate 100 is an N-type InP substrate;
Forming a barrier layer and an InGaAlAs quantum well layer 200 alternately stacked on the laser substrate 100, forming a grating layer 310 and a P-type InP protection layer 320 on the alternately stacked film layers;
the grating layer 310 is only located in the laser light source region;
The P-type InP protective layer 320 covers the entire surface of the lower layer and covers the grating layer 310;
forming an InGaAs sacrificial layer on the grating layer 310 and the P-type InP protective layer 320;
The isolation protection layer 500 and the dielectric film layer 600 are formed on the InGaAs sacrificial layer.
The film layers described above may be formed by epitaxial growth by a process such as metal organic chemical vapor deposition.
The thickness of the sacrificial layer is about 200nm to 500nm, for example, 200nm, 300nm, 400nm, 500nm. If the sacrificial layer is too thin and less than 200nm, perfect coverage cannot be formed, and the underlying multiple quantum well structure cannot be effectively protected, and if the sacrificial layer is too thick and more than 500nm, the temperature and time required for quantum well hybridization increase can be caused. Therefore, the thickness of the sacrificial layer is in the range of 200-500 nm, and the balance between effective protection of the multi-quantum well structure and the least possible mixing temperature and time can be achieved.
Further, referring to fig. 3, an isolation protection layer 500 is formed to cover the electro-absorption modulation region a and the laser light source region C, exposing the waveguide region B. The step of forming the isolation protection layer 500 includes forming an initial isolation protection layer covering the entire surface of the multiple quantum well structure through a first growth process, and removing the initial isolation protection layer located in the waveguide region B through a first etching process to form the isolation protection layer 500 covering the electro-absorption modulation region a and the laser light source region C and exposing the waveguide region B. In this way, the electro-absorption modulation region a and the laser light source region C can be protected from forming a damaged interface and from forming a vacancy defect during the formation of the dielectric film layer 600. In the subsequent annealing process, defect diffusion does not exist, the crystal quality of the quantum well layer region below is not affected, and the problem of residual defects is avoided.
Specifically, in this embodiment, the first growth process includes plasma enhanced chemical vapor deposition or metal organic chemical vapor deposition, and the first etching process includes photolithography and/or wet etching and/or dry etching. In addition, the method also comprises pretreatment steps such as cleaning, purging, drying and the like, and the post-treatment steps can be selected by a person skilled in the art according to actual requirements.
Further, referring to fig. 4, a dielectric film 600 is formed, where the dielectric film 600 covers the isolation protection layer 500 of the electroabsorption modulation region a and the laser light source region C, and the surface of the multiple quantum well structure (i.e. the surface of the InGaAs sacrificial layer) exposed by the waveguide region B, the step of forming the dielectric film 600 includes a sputter deposition process, the material of the dielectric film 600 includes SiO 2 or SiN x, and the thickness of the dielectric film 600 is 50nm to 80nm, for example, 50nm, 60nm, 70nm, and 80nm. The dielectric film 600 formed by deposition is formed by using a sputtering deposition process, so that the interface between the surface of the multiple quantum well structure exposed by the waveguide region B and the dielectric film 600 is damaged during the formation process, thereby forming a vacancy defect. If the thickness of the film layer is less than 50nm, the dielectric film layer 600 is too thin, a uniform and stable coating layer cannot be formed, and if the thickness of the film layer is more than 80nm, the dielectric film layer 600 is too thick, which is not beneficial to removing the dielectric film after the subsequent annealing is completed. Further, refer to fig. 5. In the annealing step, the waveguide region B is laminated with alternating quantum well layers and barrier layers under the dielectric film layer 600, and the quantum well mixed layer region 210 is formed due to the rearrangement of diffusion lattices of defects under annealing conditions. Wherein, different functional layers are formed according to different doping concentrations, and at least comprise a limiting layer (SCH) and a buffer layer. In the annealing and mixing step, the annealing temperature is 650-750 ℃, such as 650-680 ℃, 700 ℃, 720 ℃ and 750 ℃, and the annealing time is 100s, 120s and 140s. If the annealing temperature is too high or the annealing time is too long, excessive blue shift and degradation of material performance are easily caused, and if the annealing temperature is too low or the annealing time is too short, the blue shift of the wavelength is insufficient, and the performance requirement of the device cannot be met. In a preferred embodiment, an annealing temperature of 700 ℃ and an annealing time of 120s can induce a blue shift of about 20nm, meeting the operational requirements of most electroabsorption modulators.
Further, referring to fig. 6, the method for manufacturing the electro-absorption modulated laser according to the present embodiment further includes removing the InGaAs sacrificial layer, the isolation protection layer 500 and the dielectric film layer 600 after the annealing and doping step,
Referring to fig. 7 and 8, for a device of a ridge waveguide structure, further comprising:
forming a P-type InP cladding layer 700 on the grating layer 310 and the P-type InP protection layer 320;
etching the electroabsorption modulation region A, the laser light source region C and the waveguide region B to form a ridge waveguide structure;
Forming a side protection layer 710 at a side of the ridge waveguide structure;
Forming an InGaAs contact layer 800 on the surfaces of the P-type InP cladding layer 700 in the electroabsorption modulation region A and the laser light source region C;
P-type metal is vapor-deposited on the surface of the InGaAs contact layer 800 to form a P-type metal electrode 910, and N-type metal is vapor-deposited on the surface of the laser substrate 100 to form an N-type metal electrode 920. The P-type metal electrode 910 and the N-type metal electrode 920 are the ohmic contact electrodes.
Or referring to fig. 7 and 9, for a device with a buried heterojunction structure, further comprising:
etching the electroabsorption modulation region A, the laser light source region C and the waveguide region B to form a mesa structure;
A semi-insulating barrier 620 and an N-InP barrier 630 are grown by a second epitaxy on the sides of the mesa;
Forming a P-type InP cladding layer 700 on the surface of the mesa structure, wherein the P-type InP cladding layer 700 covers the electroabsorption modulation region a and the laser light source region C;
An InGaAs contact layer 800 and an insulating spacer layer 810 are formed on the surfaces of the P-type InP cladding layer 700 in the electroabsorption modulation region A and the laser light source region C;
P-type metal is vapor-deposited on the surface of the InGaAs contact layer 800 to form a P-type metal electrode 910, and N-type metal is vapor-deposited on the surface of the laser substrate 100 to form an N-type metal electrode 920. The P-type metal electrode 910 and the N-type metal electrode 920 are the ohmic contact electrodes.
Example 2
The present embodiment provides an electroabsorption modulated laser manufactured using the manufacturing method of the electroabsorption modulated laser provided in embodiment 1, and referring to fig. 5, including:
The multi-quantum well structure comprises an electroabsorption modulation region A, a waveguide region B and a laser light source region C, wherein the waveguide region B is positioned between the electroabsorption modulation region A and the laser light source region C;
and a quantum well mixed layer region 210, wherein the quantum well mixed layer region 210 is positioned in the waveguide region B and is in the same layer with the alternately laminated barrier layers and InGaAlAs quantum well layers 200.
The electroabsorption modulated laser provided in this embodiment was manufactured using the manufacturing method of electroabsorption modulated laser provided in embodiment 1 described above. In the forming process, the interface between the dielectric film layer 600 and the film layer below the dielectric film layer 600 in the waveguide region B is damaged to generate a vacancy defect, the dielectric film layer 600 is an undoped insulating dielectric film layer 600, the interface between the dielectric film layer 600 and the film layer below the dielectric film layer 600 is damaged to generate a vacancy defect when the multi-quantum well structure in the waveguide region B is formed by the dielectric film layer 600, and other areas are covered by the isolation protection layer 500 to keep the interface intact. During the subsequent anneal, vacancy defects in waveguide region B can rapidly diffuse into the quantum well of this region (i.e., alternately stacked barrier layers and InGaAlAs quantum well layers 200), causing intermixing of well atoms and barrier atoms in the quantum well and thus a change in the composition of the quantum well material. Unlike other ion implantation, impurity diffusion and other quantum well mixing methods, the impurity-free and hole-free enhanced disorder process adopted in the invention does not cause electrical and optical losses of the device, because the whole process has no impurity intervention, but the disorder degree of the lattice structure of the quantum well is changed. Meanwhile, in the invention, only the very small area of the waveguide area B completes quantum well mixing, the rest areas including the laser light source area C and the electroabsorption modulation area A are all under the protection of the isolation protection layer 500, no matter the quantum well structure or the performance is affected, the crystal quality is not reduced, and the problem of residual defects is avoided. The stability of the device is ensured to the greatest extent.
Further, with continued reference to fig. 5, the multiple quantum well structure includes:
A laser substrate 100, wherein the laser substrate 100 is an N-type InP substrate;
alternating stacked barrier and InGaAlAs quantum well layers 200 on the laser substrate 100, and quantum well intermixed layer regions 210 co-layer therewith;
A grating layer 310 and a P-type InP protective layer 320 on the alternately stacked barrier layer and InGaAlAs quantum well layer 200 and the quantum well intermixed layer region 210;
The grating layer 310 is only located in the laser light source region, and the P-type InP protective layer 320 covers the entire surface of the lower film layer and covers the grating layer 310.
Referring to fig. 7 and 8, for a device of a ridge waveguide structure, further comprising:
a P-type InP cladding layer 700 on the grating layer 310 and the P-type InP protection layer 320;
the P-type InP cladding layer 700 of the electroabsorption modulation region a, the laser light source region C, and the waveguide region B constitute a ridge waveguide structure;
a side protection layer 710 located at a side of the ridge waveguide structure;
an InGaAs contact layer 800 located on the surface of the P-type InP clad layer 700 of the electroabsorption modulation region a and the laser light source region C;
a P-type metal electrode 910 located on the surface of the InGaAs contact layer 800;
an N-type metal electrode 920 located on the surface of the laser substrate 100;
or referring to fig. 7 and 9, for a device with a buried heterojunction structure, further comprising:
A mesa structure including the laser substrate 100 of a partial height of the electro-absorption modulation region a, the laser light source region C, and the waveguide region B, alternately stacked barrier layers and InGaAlAs quantum well layers 200, quantum well hybrid layer regions 210, and all of the grating layers 310 and P-InP protective layers 320 on the laser substrate 100;
Semi-insulating barriers 620 and N-InP barriers 630 on both sides of the mesa;
A P-type InP cladding layer 700 on the mesa surface;
an InGaAs contact layer 800 and an insulating spacer layer 810 on the surfaces of the P-type InP clad layer 700 of the electro-absorption modulation region a and the laser light source region C;
a P-type metal electrode 910 located on the surface of the InGaAs contact layer 800;
an N-type metal electrode 920 is located on the surface of the laser substrate 100.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (10)
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