CN118936567B - Temperature and salt depth sensor based on silicon nano channel and manufacturing method thereof - Google Patents
Temperature and salt depth sensor based on silicon nano channel and manufacturing method thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of semiconductor sensors, and discloses a temperature and salt depth sensor based on silicon nano channels and a manufacturing method thereof, wherein a SiO 2 oxygen burying layer is arranged on a silicon substrate layer, three silicon nano channels are arranged on the SiO 2 oxygen burying layer, ohmic contact area silicon films are arranged on two sides of each silicon nano channel, a metal lead wire and an electrode layer are arranged on the SiO 2 oxygen burying layer and connected with the ohmic contact area silicon films, a SiO 2 isolation layer is used as a protection layer, a SiO 2 gate oxide layer is arranged above one of the silicon nano channels, and a cavity used as a back cavity is arranged on the silicon substrate layer below one of the silicon nano channels. The technical scheme of the invention solves the problems of complex structure, large volume and low integration degree of the traditional temperature and salt depth sensor, and can ensure high-sensitivity detection and parameter consistency of the temperature and salt depth sensor.
Description
Technical Field
The invention belongs to the technical field of semiconductor sensors, relates to a sensitive unit structure and manufacturing thereof, and in particular relates to a temperature and salt depth sensor based on a silicon nano channel and a manufacturing method thereof.
Background
The temperature and salt depth profiler is widely applied in the field of ocean exploration, the core component of the temperature and salt depth profiler is a high-precision temperature and salt depth sensor, the temperature and salt depth measurement is usually realized by configuring a conductivity sensor, a pressure sensor and a temperature sensor at present, a three-electrode conductivity sensor, a temperature sensor and a digital quartz pressure sensor with temperature compensation are installed in a specific example and an explanation way, the conductivity sensor is used for measuring the conductivity of a water body to determine salinity information of the water body, the temperature sensor is used for measuring the temperature of the water body to obtain ocean temperature distribution information, and the pressure sensor is used for measuring the pressure of the water body to obtain depth information of the water body in a conversion way.
Future ocean monitoring requires the characteristics of standby acquisition, accurate measurement, easy integration and the like of a temperature and salt depth sensor, so that higher requirements are provided for the aspects of energy consumption, volume, long-term stability, maintenance-free, self-calibration, platform adaptability and the like of the sensor. In the existing temperature and salt depth measurement technology, the temperature and salt depth sensor adopts a platinum resistance temperature sensor, a multi-electrode conductivity sensor, a piezoresistive sensor or a capacitive sensor and the like, has the defects of complex structure, large volume and low integration degree, cannot meet the trend of the temperature and salt depth sensor towards the development of miniaturization, low power consumption, quick response, low cost and high consistency, and limits the development and application of the temperature and salt depth sensor to a certain extent.
Disclosure of Invention
The invention aims to provide a temperature and salt depth sensor based on a silicon nano channel and a manufacturing method thereof, so as to solve one or more technical problems. The temperature and salt depth sensor based on the silicon nano channel solves the technical problems of complex structure, large volume and low integration degree of the traditional temperature and salt depth sensor, and in addition, the temperature sensing unit, the salinity sensing unit and the depth sensing unit are monolithically integrated, so that parameters such as water temperature, salinity and the like in water bodies at different depths can be measured, and the high sensitivity detection and the parameter consistency of the temperature and salt depth sensor are ensured.
In order to achieve the above purpose, the invention adopts the following technical scheme:
The invention provides a thermal salt depth sensor based on a silicon nano channel, which comprises a silicon substrate layer, a SiO 2 buried oxide layer, a first silicon nano channel, a second silicon nano channel, a third silicon nano channel, an ohmic contact area silicon film, a metal lead and electrode layer, a SiO 2 isolation layer and a SiO 2 gate oxide layer,
The SiO 2 oxygen burying layer is arranged on the silicon substrate layer;
the SiO 2 oxygen-buried layer is provided with the first silicon nano channel, the second silicon nano channel and the third silicon nano channel, and both sides of the first silicon nano channel, the second silicon nano channel and the third silicon nano channel are heavily doped ohmic contact area silicon films;
The metal lead and the electrode layer are arranged on the SiO 2 oxygen-buried layer and are connected with the silicon films of the ohmic contact areas;
The SiO 2 isolation layer is arranged above the first silicon nano channel, the second silicon nano channel, the third silicon nano channel, the ohmic contact area silicon film, the metal lead and the electrode layer, a window is arranged at the part of the SiO 2 isolation layer above the first silicon nano channel, the SiO 2 gate oxide layer is arranged at the window, and a cavity serving as a back cavity is arranged at the part of the silicon substrate layer below the third silicon nano channel.
A further improvement of the present invention is that,
The silicon substrate layer, the SiO 2 oxygen burying layer, the first silicon nano channel, the ohmic contact area silicon films at two sides of the first silicon nano channel, the metal lead and electrode layer and the SiO 2 gate oxygen layer form a salinity sensing unit in the temperature and salt depth sensor;
In the salinity sensing unit, salinity information is obtained by measuring the conductance of the first silicon nano channel and then performing temperature compensation.
A further improvement of the present invention is that,
The silicon substrate layer, the SiO 2 oxygen burying layer, the second silicon nano channel, the ohmic contact area silicon films at two sides of the second silicon nano channel, the metal lead, the electrode layer and the SiO 2 isolation layer form a temperature sensing unit in the temperature and salt depth sensor;
And in the temperature sensing unit, the temperature information is obtained by measuring the conductivity of the second silicon nano channel and then based on the relationship between the pre-calibrated temperature and the conductivity.
A further improvement of the present invention is that,
The SiO 2 oxygen burying layer, the third silicon nano channel, the ohmic contact area silicon films at two sides of the third silicon nano channel, the metal lead, the electrode layer and the SiO 2 isolation layer form a depth sensing unit in the temperature and salt depth sensor;
in the depth sensing unit, the depth information is obtained by measuring the resistivity of the third silicon nano channel and then performing temperature compensation.
A further improvement of the present invention is that,
The first silicon nano channel, the second silicon nano channel and the third silicon nano channel are all made of P-type monocrystalline silicon with the crystal orientation of <100>, the resistivity of 0.1-0.5 omega-cm and the thickness of 40-200 nm;
Wherein the P-type impurity of the P-type monocrystalline silicon is boron impurity or indium impurity.
A further improvement of the present invention is that,
And the doping concentration of the P-type impurity in the ohmic contact region silicon film is more than or equal to 5 x 10 19/cm3.
A further improvement of the present invention is that,
The SiO 2 isolation layer is formed through low-pressure chemical vapor deposition, and the thickness is 100 nm-300 nm.
A further improvement of the present invention is that,
The SiO 2 gate oxide layer is formed through low-pressure chemical vapor deposition, and the thickness is 10 nm-50 nm.
A further improvement of the present invention is that,
The thickness of the SiO 2 oxygen-buried layer is 2-6 μm.
In a second aspect of the present invention, there is provided a method for manufacturing a silicon nanochannel-based warm salt depth sensor, the method comprising the steps of:
Obtaining a manufacturing substrate, wherein the manufacturing substrate comprises a silicon substrate layer, a SiO 2 oxygen-buried layer arranged on the silicon substrate layer and a device layer arranged on the SiO 2 oxygen-buried layer;
forming a barrier layer on the device layer by low-pressure chemical vapor deposition, forming an ohmic contact region diffusion window on the barrier layer by ultraviolet exposure lithography, and forming an ohmic contact region by heavy doping injection based on the ohmic contact region diffusion window;
Etching to remove the barrier layer outside the ohmic contact area by adopting buffer oxide etching liquid to obtain a bare device layer, and photoetching to form a first silicon nano channel, a second silicon nano channel and a third silicon nano channel on the bare device layer, wherein both sides of the first silicon nano channel, the second silicon nano channel and the third silicon nano channel are heavily doped ohmic contact area silicon films;
Forming a metal lead and an electrode layer on the SiO 2 buried oxide layer by adopting a metal pattern photoetching, magnetron sputtering and stripping liquid metal stripping mode, wherein the metal lead and the metal lead in the electrode layer form an alloy with the ohmic contact area;
Forming an SiO 2 isolation layer by low-pressure chemical vapor deposition above the first silicon nano channel, the second silicon nano channel, the third silicon nano channel, the ohmic contact region silicon film, the metal lead and the electrode layer, wherein a window is arranged on the part of the SiO 2 isolation layer above the first silicon nano channel, and an SiO 2 gate oxide layer grows on the front surface of the window by low-pressure chemical vapor deposition;
And etching the part of the silicon substrate layer below the third silicon nano channel into a cavity, wherein the etching is stopped until the SiO 2 oxygen-buried layer is stopped, so as to form a back cavity.
Compared with the prior art, the invention has the following beneficial effects:
aiming at the problems of complex structure and larger volume of the traditional temperature and salt depth sensor, the invention particularly discloses a temperature and salt depth sensor based on a silicon nano channel, which is used for detecting temperature, salinity and depth based on a transistor sensor with the silicon nano channel and has the advantages of small volume, easiness in operation and the like. In addition, aiming at the problems of low consistency, low sensitivity, low integration level and the like of the traditional temperature and salt depth sensor, the temperature and salt depth sensor provided by the invention integrates three sensors of temperature, salinity and depth in a single-chip manner, and parameter information such as temperature, salinity and depth can be detected by analyzing the change of carrier concentration and mobility of a first silicon nano channel, a second silicon nano channel and a third silicon nano channel, wherein the change of the carrier concentration and mobility is in an exponential power change, and the temperature and salt depth sensor has higher sensitivity and smaller volume than the traditional temperature and salt depth sensor.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it being obvious that the drawings in the description below are some embodiments of the invention and that other drawings can be obtained from them without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional view of a thermal salt depth sensor based on a silicon nanochannel in accordance with an embodiment of the invention;
FIG. 2 is a schematic top view of a thermal salt depth sensor based on a silicon nanochannel according to an embodiment of the invention;
the explanation of the reference numbers in the figures is that,
1. A silicon substrate layer; 2, an SiO 2 oxygen burying layer, a first silicon nano channel, a 4, an ohmic contact area silicon film, a5, a metal lead wire and an electrode layer, a 6, an SiO 2 isolation layer, a 7, siO 2 gate oxygen layer, a 8, a second silicon nano channel, a 9, a third silicon nano channel;
100. the device comprises a salinity sensing unit, a temperature sensing unit and a depth sensing unit.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some, but not all embodiments of the present invention.
Based on the technical solutions disclosed in the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making any creative effort fall within the protection scope of the present invention. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Referring to fig. 1 and 2, in the embodiment of the invention, a thermal salt depth sensor based on a silicon nano-channel is disclosed, which specifically comprises a silicon substrate layer 1, a SiO 2 buried oxide layer 2, a first silicon nano-channel 3, a second silicon nano-channel 8, a third silicon nano-channel 9, an ohmic contact region silicon film 4, a metal lead and electrode layer 5, a SiO 2 isolation layer 6 and a SiO 2 gate oxide layer 7, wherein,
The SiO 2 oxygen-buried layer 2 is arranged on the silicon substrate layer 1;
The SiO 2 oxygen-buried layer 2 is provided with the first silicon nano channel 3, the second silicon nano channel 8 and the third silicon nano channel 9, and both sides of the first silicon nano channel 3, the second silicon nano channel 8 and the third silicon nano channel 9 are respectively an ohmic contact area silicon film 4 doped with heavy metals;
The metal lead and the electrode layer 5 are arranged on the SiO 2 oxygen-buried layer 2 and are connected with the silicon films 4 of the ohmic contact areas;
the SiO 2 isolation layer 6 is arranged above the first silicon nano-channel 3, the second silicon nano-channel 8, the third silicon nano-channel 9, the ohmic contact area silicon film 4 and the metal lead and electrode layer 5;
A window is arranged on the part of the SiO 2 isolation layer 6 above the first silicon nano channel 3, the SiO 2 gate oxide layer 7 is arranged on the window, and a cavity serving as a back cavity is arranged on the part of the silicon substrate layer 1 below the third silicon nano channel 9.
In the silicon nano channel-based temperature and salt depth sensor disclosed by the embodiment of the invention, parameter information such as temperature, salinity, depth and the like can be detected by analyzing the carrier concentration and mobility changes of the first silicon nano channel, the second silicon nano channel and the third silicon nano channel, wherein the carrier concentration and mobility changes in an exponential power, and the sensor has higher sensitivity and smaller volume than the existing temperature and salt depth sensor.
Further specific examples illustratively, the thermal salt depth sensor disclosed in the embodiments of the present invention is connected via metal leads to a recording display that is capable of operating the entire apparatus in addition to receiving, processing, recording and displaying the various information data acquired by the sensor. The temperature and salt depth sensor disclosed by the embodiment of the invention is tied on a buoy, a ship, a water sampler or a submersible through a rope or a rigging and is put into a water body to be monitored, so that a recording display can be used for receiving signals, and after the signals are stable, monitoring data are recorded and stored.
In the embodiment of the invention, the salinity sensing unit 100 consists of a silicon substrate layer 1, a SiO 2 oxygen burying layer 2, a first silicon nano channel 3, an ohmic contact area silicon film 4, a metal lead, an electrode layer 5 and a SiO 2 gate oxide layer 7, and is a silicon nano channel transistor with a bare SiO 2 gate oxide layer, wherein the salinity sensing unit is a principle explanatory, ions in seawater can influence the surface potential of the SiO 2 gate oxide layer, so that the mobility of the silicon nano channel transistor and the surface charge of an inversion layer are regulated, the relation between the conductivity and the source leakage current-voltage of the first silicon nano channel is determined, meanwhile, the current-voltage characteristic is related to the temperature, and the salinity information can be calculated by measuring the conductivity of the first silicon nano channel and then performing temperature compensation.
In the embodiment of the invention, the temperature sensing unit 200 consists of a silicon substrate layer 1, a SiO 2 oxygen burying layer 2, a second silicon nano channel 8, an ohmic contact area silicon film 4, a metal lead wire, an electrode layer 5 and a SiO 2 isolation layer 6, wherein the conductivity of the second silicon nano channel in the temperature sensing unit is in direct proportion to the concentration of majority carriers and the mobility of majority carriers, the current-voltage characteristic is irrelevant to salinity and depth, the conductivity is a temperature-related function, the relationship between temperature and conductivity can be established through temperature calibration, and further temperature information can be obtained.
In the embodiment of the invention, the depth sensing unit 300 consists of a SiO 2 oxygen burying layer 2, a third silicon nano channel 9, an ohmic contact area silicon film 4, a metal lead wire, an electrode layer 5 and a SiO 2 isolation layer 6, and illustratively, the depth sensing unit is a silicon nano channel transistor which is positioned on a SiO 2 isolation layer protection on a SiO 2 oxygen burying layer cavity film, the SiO 2 oxygen burying layer cavity film is deformed by hydrostatic pressure under different depths, so that stress is generated on the silicon nano channel transistor, the stress change can cause the resistivity of the transistor to be obviously changed, the current-voltage characteristics of the transistor are related to temperature and depth, and the depth information can be obtained after temperature compensation.
In one embodiment of the invention, the first silicon nano channel 3, the second silicon nano channel 8 and the third silicon nano channel 9 are all made of P-type monocrystalline silicon with the crystal orientation of <100>, the resistivity of 0.1-0.5 omega-cm and the thickness of 40-200 nm, and in the preferred technical scheme, the thickness value is 100nm.
In one embodiment of the invention, the P-type impurity of the silicon nano channel is boron impurity or indium impurity, the ohmic contact region silicon film 4 is formed by injecting the P-type impurity into the device layer silicon film, and the doping concentration is more than 5 x 10 19/cm3.
Further, the SiO 2 isolation layer 6 is formed by low-pressure chemical vapor deposition, and the thickness is 100 nm-300 nm.
Further, the SiO 2 gate oxide layer 7 is formed through low-pressure chemical vapor deposition, and the thickness is 10 nm-50 nm.
Further, the thickness of the cavity film of the SiO 2 oxygen-buried layer 2 is 2-6 μm.
The embodiment of the invention provides a manufacturing method of a temperature and salt depth sensor based on a silicon nano channel, which comprises the following steps:
Step 1, obtaining a manufacturing substrate, wherein the manufacturing substrate comprises a silicon substrate layer 1, a SiO 2 oxygen burying layer 2 arranged on the silicon substrate layer 1 and a device layer arranged on the SiO 2 oxygen burying layer 2, and further specifically, by taking P-type 4-inch SOI (Silicon on Insulator, insulator silicon wafer) as a manufacturing substrate, wherein the thickness of the SiO 2 oxygen burying layer 2 is 3 um, the thickness of the silicon substrate layer 1 is 450 um, the device layer is made of P-type monocrystalline silicon with the crystal orientation of <100>, the resistivity of 0.1-0.5-omega-cm and the thickness of 100-nm, and the P-type impurities are boron impurities;
Step 2, forming a blocking layer on the device layer by low-pressure chemical vapor deposition, forming an ohmic contact region diffusion window on the blocking layer by ultraviolet exposure lithography, forming an ohmic contact region based on the ohmic contact region diffusion window by heavy doping injection, further specifically and exemplarily forming an SiO 2 blocking layer with the thickness of 200 nm on the front side by low-pressure chemical vapor deposition on the device layer, and forming an ohmic contact region by performing high-temperature annealing at 1000 ℃ and 30min in an annealing furnace in nitrogen atmosphere, wherein the blocking layer is used as a blocking layer for diffusing the ohmic contact region and protecting a silicon nano channel from the subsequent heavy doping injection, the SiO 2 blocking layer is subjected to 200 nm by ultraviolet exposure lithography by reactive ions, so as to form the ohmic contact region diffusion window;
Step 3, etching to remove a barrier layer outside the ohmic contact area by using a buffer oxide etching solution and organically cleaning to obtain a bare device layer, photoetching to form a first silicon nano channel 3, a second silicon nano channel 8 and a third silicon nano channel 9 on the bare device layer, wherein both sides of the first silicon nano channel 3, the second silicon nano channel 8 and the third silicon nano channel 9 are respectively a doped ohmic contact area silicon film 4, further specifically, photoetching to form a silicon nano channel pattern on the bare device layer, carrying out reactive ion etching on the device layer 100 nm to form each silicon nano channel, then carrying out photoetching to obtain a metal pattern, carrying out magnetron sputtering Ti/50 nm-Pt/60 nm-Au/500 nm, stripping metal by using a stripping solution to form a metal lead, and carrying out 350 ℃ and 5min alloy annealing in an annealing furnace in a nitrogen atmosphere to enable the metal and the prepared ohmic contact area to form an alloy;
Step 4, forming a SiO 2 isolation layer 6 by low-pressure chemical vapor deposition above the first silicon nanochannel 3, the second silicon nanochannel 8, the third silicon nanochannel 9, the ohmic contact region silicon film 4 and the metal lead and electrode layer 5, wherein a window is arranged at the part of the SiO 2 isolation layer 6 above the first silicon nanochannel 3, a SiO 2 gate oxide layer 7 is grown on the front side by low-pressure chemical vapor deposition at the window, further specifically and exemplarily, a SiO 2 isolation layer 6 is grown on the front side by low-pressure chemical vapor deposition, the thickness is 200 nm, the leakage current is not generated, the temperature sensor and the depth sensor are not influenced by external ions in water, a gate oxide pattern of a salinity sensor is formed by photoetching, the SiO 2 isolation layer 200 nm is etched by reactive ions, the silicon nanochannel of the salinity sensor is exposed, the SiO 2 gate oxide layer 7 is grown on the front side by low-pressure chemical vapor deposition, the thickness is 20nm, and the gate oxide layer above the silicon nanochannel of the salinity sensor is formed;
Step 5, photoetching to form a metal electrode area of the temperature and salt depth sensor, and performing reactive ion etching on the SiO 2 isolation layer 220 nm until the Ti/Pt/Au metal subjected to magnetron sputtering is etched to stop, so as to form the metal electrode area of the temperature and salt depth sensor;
And 6, etching the part of the silicon substrate layer 1 below the third silicon nano channel 9 into a cavity, wherein the silicon substrate layer 450 um is etched by reactive ions until the silicon substrate layer is etched to the SiO 2 oxygen burying layer 2, so as to form a back cavity of the depth sensor, and finishing the preparation.
In the manufacturing method of the embodiment of the invention, the same process steps are provided in the processes of forming ohmic contact, sensitive units, metal leads and the like, and the preparation processes of different sensing units are controlled by changing different mask patterns, so that three sensors can be integrated on one chip through the same process flow, the high integration of the three sensors can be realized, and the problems of low consistency, low sensitivity, low integration level and the like faced by the traditional temperature and salt depth sensor are solved by analyzing the carrier concentration and mobility change of the silicon nano channel to detect temperature, salinity and depth information.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the above embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made to the specific embodiments of the present invention without departing from the spirit and scope of the present invention, and any modifications and equivalents are intended to be included in the scope of the claims of the present invention.
Claims (7)
1. A temperature and salt depth sensor based on a silicon nano channel is characterized in that,
The temperature and salt depth sensor based on the silicon nano channel comprises a silicon substrate layer (1), a SiO 2 oxygen burying layer (2), a first silicon nano channel (3), a second silicon nano channel (8), a third silicon nano channel (9), an ohmic contact area silicon film (4), a metal lead and electrode layer (5), a SiO 2 isolation layer (6) and a SiO 2 gate oxide layer (7),
The SiO 2 oxygen burying layer (2) is arranged on the silicon substrate layer (1);
the SiO 2 oxygen-buried layer (2) is provided with the first silicon nano channel (3), the second silicon nano channel (8) and the third silicon nano channel (9), and both sides of the first silicon nano channel (3), the second silicon nano channel (8) and the third silicon nano channel (9) are heavily doped ohmic contact area silicon films (4);
The metal lead and the electrode layer (5) are arranged on the SiO 2 buried oxide layer (2) and are connected with the silicon films (4) of the ohmic contact areas;
The SiO 2 isolation layer (6) is arranged above the first silicon nano channel (3), the second silicon nano channel (8), the third silicon nano channel (9), the ohmic contact area silicon film (4) and the metal lead and electrode layer (5), a window is arranged at the part of the SiO 2 isolation layer (6) above the first silicon nano channel (3), the SiO 2 gate oxide layer (7) is arranged at the window, and a cavity serving as a back cavity is arranged at the part of the silicon substrate layer (1) below the third silicon nano channel (9);
The salinity sensing unit (100) in the temperature and salt depth sensor is formed by the silicon substrate layer (1), the SiO 2 oxygen burying layer (2), the first silicon nano channel (3), the ohmic contact area silicon films (4) on two sides of the first silicon nano channel (3), the metal lead, the electrode layer (5) and the SiO 2 grid oxygen layer (7), wherein in the salinity sensing unit (100), the salinity information is obtained by measuring the electric conductivity of the first silicon nano channel (3) and then performing temperature compensation;
The silicon substrate layer (1), the SiO 2 oxygen burying layer (2), the second silicon nano channel (8), ohmic contact area silicon films (4) at two sides of the second silicon nano channel (8), the metal lead, electrode layer (5) and the SiO 2 isolation layer (6) form a temperature sensing unit (200) in the temperature and salt depth sensor, wherein in the temperature sensing unit (200), temperature information is obtained by measuring the conductivity of the second silicon nano channel (8) and then based on the relation between the pre-calibrated temperature and the conductivity;
The SiO 2 oxygen burying layer (2), the third silicon nano channel (9), the ohmic contact area silicon films (4) on two sides of the third silicon nano channel (9), the metal lead wire and electrode layer (5) and the SiO 2 isolation layer (6) form a depth sensing unit (300) in the warm salt depth sensor, wherein in the depth sensing unit (300), depth information is obtained through calculation after temperature compensation is performed after the resistivity of the third silicon nano channel (9) is measured.
2. A silicon nanochannel-based warm salt depth sensor according to claim 1, wherein,
The first silicon nano channel (3), the second silicon nano channel (8) and the third silicon nano channel (9) are all made of P-type monocrystalline silicon with the crystal orientation of <100>, the resistivity of 0.1-0.5 omega-cm and the thickness of 40-200 nm;
Wherein the P-type impurity of the P-type monocrystalline silicon is boron impurity or indium impurity.
3. A silicon nanochannel-based warm salt depth sensor according to claim 1, wherein,
In the ohmic contact region silicon film (4), the doping concentration of the P-type impurity is more than or equal to 5 x 10 19/cm3.
4. A silicon nanochannel-based warm salt depth sensor according to claim 1, wherein,
The SiO 2 isolation layer (6) is formed by low-pressure chemical vapor deposition, and the thickness is 100 nm-300 nm.
5. A silicon nanochannel-based warm salt depth sensor according to claim 1, wherein,
The SiO 2 gate oxide layer (7) is formed through low-pressure chemical vapor deposition, and the thickness is 10 nm-50 nm.
6. A silicon nanochannel-based warm salt depth sensor according to claim 1, wherein,
The thickness of the SiO 2 oxygen-buried layer (2) is 2-6 mu m.
7. A method for manufacturing a silicon nanochannel-based warm salt depth sensor according to claim 1, wherein,
The manufacturing method of the temperature and salt depth sensor based on the silicon nano channel comprises the following steps:
obtaining a manufacturing substrate, wherein the manufacturing substrate comprises a silicon substrate layer (1), a SiO 2 oxygen-buried layer (2) arranged on the silicon substrate layer (1) and a device layer arranged on the SiO 2 oxygen-buried layer (2);
forming a barrier layer on the device layer by low-pressure chemical vapor deposition, forming an ohmic contact region diffusion window on the barrier layer by ultraviolet exposure lithography, and forming an ohmic contact region by heavy doping injection based on the ohmic contact region diffusion window;
etching to remove a barrier layer outside the ohmic contact region by adopting a buffer oxide etching solution to obtain a bare device layer, and photoetching to form a first silicon nano channel (3), a second silicon nano channel (8) and a third silicon nano channel (9) on the bare device layer, wherein both sides of the first silicon nano channel (3), the second silicon nano channel (8) and the third silicon nano channel (9) are doped ohmic contact region silicon films (4);
Forming a metal lead and an electrode layer (5) on the SiO 2 buried oxide layer (2) by adopting a metal pattern photoetching, magnetron sputtering and stripping liquid metal stripping mode, wherein the metal lead in the metal lead and the electrode layer (5) and the ohmic contact area form an alloy;
A SiO 2 isolation layer (6) is formed above the first silicon nano channel (3), the second silicon nano channel (8), the third silicon nano channel (9), the ohmic contact area silicon film (4) and the metal lead and electrode layer (5) by low-pressure chemical vapor deposition, a window is arranged at the part of the SiO 2 isolation layer (6) above the first silicon nano channel (3), and a SiO 2 gate oxide layer (7) is grown on the front surface of the window by low-pressure chemical vapor deposition;
and etching the part of the silicon substrate layer (1) below the third silicon nano channel (9) into a cavity, wherein the etching is stopped until the SiO 2 oxygen-buried layer (2) is stopped, so as to form a back cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411430683.4A CN118936567B (en) | 2024-10-14 | 2024-10-14 | Temperature and salt depth sensor based on silicon nano channel and manufacturing method thereof |
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