CN118957546B

CN118957546B - Reaction cavity structure and deposition equipment

Info

Publication number: CN118957546B
Application number: CN202411362113.6A
Authority: CN
Inventors: 李继刚; 张国伟; 王彬; 周纬; 朱顺利
Original assignee: Jiangsu Shouxin Semiconductor Technology Co ltd
Current assignee: Jiangsu Shouxin Semiconductor Technology Co ltd
Priority date: 2024-09-27
Filing date: 2024-09-27
Publication date: 2025-07-15
Anticipated expiration: 2044-09-27
Also published as: CN118957546A

Abstract

The disclosed embodiments relate to the field of semiconductor manufacturing, and provide a reaction chamber structure and deposition equipment, wherein the reaction chamber structure includes a reaction chamber body, wherein the reaction chamber body includes a reaction chamber and a receiving chamber connected to the reaction chamber in a vertical direction, and the reaction chamber is located above the receiving chamber, and the reaction chamber structure also includes an air inlet mechanism, an air pumping port, a carrier, a curing mechanism, and a controller, wherein the curing mechanism is disposed in the receiving chamber and can move up and down in the vertical direction in the reaction chamber, and the curing mechanism is used to provide curing energy for the film layer to convert the film layer into a target material layer; the controller is used to control the curing mechanism to move in the vertical direction, so that the curing mechanism is located in the receiving chamber during the deposition of the film layer, and after the deposition of the film layer, the curing mechanism is controlled to move in the vertical direction into the reaction chamber, and the curing mechanism is controlled to provide curing energy for the film layer. The disclosed embodiments can at least improve the efficiency and reliability of preparing the target material layer.

Description

Reaction cavity structure and deposition equipment

Technical Field

The embodiment of the disclosure relates to the field of semiconductor manufacturing, in particular to a reaction cavity structure and deposition equipment.

Background

In the semiconductor industry, as the integration of devices is increasingly demanding, devices are continually being reduced in size to increase the integration density of various electronic components (e.g., transistors, diodes, resistors, capacitors, etc.), semiconductor devices are required to have high aspect ratio structures, and gaps between the high aspect ratio structures can be filled with insulating materials. The flowable chemical vapor deposition (FCVD, flowable Chemical Vapor Deposition) is a preparation method of a material suitable for filling a high aspect ratio structure, and can form a film layer with good fluidity on a wafer, and then use a curing mechanism to provide curing energy so as to convert the film layer on the wafer into a target material layer. FCVD can be applied to the filling of high aspect ratio gaps in semiconductor devices because of its good conformality, step coverage and the ability to adequately fill high aspect ratio spaces.

However, the efficiency and reliability of preparing the target material layer currently applied to the deposition apparatus of FCVD are to be improved.

Disclosure of Invention

The embodiment of the disclosure provides a reaction cavity structure and a deposition device, which can at least improve the efficiency and reliability of preparing a target material layer.

According to some embodiments of the present disclosure, an aspect of the disclosure provides a reaction cavity structure, which includes a reaction cavity body, a receiving cavity, an air inlet mechanism, a controller and a curing mechanism, wherein the reaction cavity body includes a reaction cavity and a receiving cavity communicated with the reaction cavity in a vertical direction, the reaction cavity is located above the receiving cavity, the air inlet mechanism is arranged at the top of the reaction cavity and is provided with an air inlet hole and an air inlet channel communicated with the air inlet hole, the air inlet hole is used for communicating an air inlet pipe for providing air, the air inlet hole is communicated with the reaction cavity, the air outlet hole is communicated with the reaction cavity, the carrier is used for carrying a wafer, the carrier is located in the reaction cavity, the curing mechanism is arranged in the receiving cavity and can move up and down in the vertical direction, the curing mechanism is used for providing curing energy for the film layer to be converted into a target material layer, and the controller is connected with the curing mechanism and is used for controlling the curing mechanism to move in the vertical direction and is located in the receiving and curing mechanism during the deposition of the film layer.

In some embodiments, the controller controls the curing mechanism to move alternately in the receiving chamber and the reaction chamber.

In some embodiments, the cross-sectional area of the containment chamber perpendicular to the vertical direction is less than the cross-sectional area of the reaction chamber perpendicular to the vertical direction.

In some embodiments, the accommodating cavity is an annular cavity communicated with the bottom of the reaction cavity, and the curing mechanism is circumferentially arranged in the accommodating cavity or comprises a plurality of curing devices circumferentially arranged in the accommodating cavity.

In some embodiments, the accommodating cavity comprises a plurality of sub accommodating cavities which are circumferentially arranged, the sub accommodating cavities are communicated with the bottom of the reaction cavity, and the curing mechanism comprises a plurality of curing devices, and the curing devices are arranged in the sub accommodating cavities.

In some embodiments, the reaction cavity structure further comprises a baffle plate, wherein the baffle plate is positioned in the accommodating cavity, the baffle plate is telescopic in the horizontal direction, the baffle plate is connected with the controller, the controller controls the baffle plate to stretch during the deposition of the film layer so that the baffle plate shields the passage between the reaction cavity and the accommodating cavity, and after the deposition of the film layer, the controller controls the baffle plate to shrink so that the baffle plate does not block the curing mechanism from moving in the vertical direction.

In some embodiments, the curing mechanism is a light source curing mechanism, the light source curing mechanism is used for providing a light beam to provide the curing energy for the film layer, the reaction cavity structure further comprises a reflecting mirror, the reflecting mirror is positioned at the top of the curing mechanism, one surface of the reflecting mirror, which faces away from the air inlet mechanism, is a reflecting surface, the reflecting mirror is used for reflecting the light beam, the reflecting mirror is telescopic in the horizontal direction, the reflecting mirror is connected with the controller, the controller is used for controlling the stretching of the reflecting mirror during the curing of the film layer, so that at least part of the reflecting surface faces the wafer, and after the film layer is cured, the controller is used for controlling the shrinkage of the reflecting mirror, so that the reflecting mirror does not block the curing mechanism from moving in the vertical direction.

In some embodiments, the curing mechanism comprises at least one movable curing device, the reaction cavity structure further comprises a first telescopic mechanism arranged in the accommodating cavity, the first telescopic mechanism is telescopic in the vertical direction and connected with the curing mechanism, the first telescopic mechanism is connected with the controller, after the film layer is deposited, the controller controls the first telescopic mechanism to stretch in the vertical direction so as to drive the curing mechanism to move into the reaction cavity, the controller controls the first telescopic mechanism to shrink in the vertical direction so as to drive the curing mechanism to move into the accommodating cavity after the film layer is cured, the second telescopic mechanism is connected with the second telescopic mechanism, the second telescopic mechanism is connected with the controller, after the film layer is deposited, the controller controls the first telescopic mechanism to stretch in the vertical direction so as to drive the curing mechanism to move into the second telescopic mechanism, the second telescopic mechanism is connected with the controller, and the controller can stop the curing mechanism from moving in the vertical direction, and the controller can stop the curing mechanism from moving.

In some embodiments, the curing mechanism comprises at least one rotatable curing device, the reaction cavity structure further comprises a first telescopic mechanism arranged in the reaction cavity, the first telescopic mechanism is telescopic in the vertical direction and connected with the curing mechanism, the first telescopic mechanism is connected with the controller, after the film layer is deposited, the controller controls the first telescopic mechanism to stretch in the vertical direction so as to drive the curing mechanism to move into the reaction cavity, the controller controls the first telescopic mechanism to shrink in the vertical direction after the film layer is cured so as to drive the curing mechanism to move into the accommodating cavity, the rotating fixing piece is connected with the first telescopic mechanism, the rotating fixing piece is rotatably connected with the rotatable curing device, the controller is connected with the rotatable curing device, when the curing mechanism is positioned in the reaction cavity, the controller controls the first telescopic mechanism to stretch in the vertical direction so as to drive the curing mechanism to move into the reaction cavity, the controller can rotate around the rotatable curing device, and the rotatable curing device can rotate at least the rotatable curing device is controlled to rotate in the horizontal direction, and the rotatable curing device can rotate around the rotatable curing device.

According to some embodiments of the present disclosure, another aspect of the embodiments of the present disclosure further provides a deposition apparatus, including the reaction chamber structure of any one of the embodiments above.

The technical scheme provided by the embodiment of the disclosure has at least the following advantages:

The technical scheme of the reaction cavity structure provided by the embodiment of the disclosure comprises a reaction cavity body, an air inlet mechanism, an air extraction opening, a carrying platform, a curing mechanism and a controller. The reaction chamber body comprises a reaction chamber and a containing chamber communicated with the reaction chamber in the vertical direction, and the reaction chamber is positioned above the containing chamber. The air inlet mechanism is arranged at the top of the reaction cavity and is provided with an air inlet hole and an air inlet channel communicated with the air inlet hole, the air inlet channel is communicated with the reaction cavity, the air inlet hole is used for being communicated with an air inlet pipe for providing air, and the air extraction hole is communicated with the reaction cavity. The carrier is used for carrying the wafer and is positioned in the reaction cavity so as to enable the surface of the wafer to deposit a film layer. The curing mechanism is arranged in the accommodating cavity and can move up and down along the vertical direction in the reaction cavity, and the curing mechanism is used for providing curing energy for the film layer so as to convert the film layer into the target material layer. The controller is connected with the curing mechanism and is used for controlling the curing mechanism to move in the vertical direction so that the curing mechanism is positioned in the accommodating cavity during the film deposition, controlling the curing mechanism to move into the reaction cavity in the vertical direction after the film deposition, and controlling the curing mechanism to provide curing energy for the film. In the reaction cavity structure, the film deposition and the film curing are carried out in the same reaction cavity, the curing mechanism is positioned in the accommodating cavity during the film deposition, and after the film deposition, the curing mechanism moves to the reaction cavity along the vertical direction to provide curing energy for the film so as to convert the curing energy into the target material layer, and steps of moving the wafer to other cavities in the related technology are not required to be added in the process, so that on one hand, a great amount of time can be saved, the preparation efficiency of the target material layer can be improved, and on the other hand, the defect that the wafer is increased due to the movement of the wafer between different cavities can be avoided, and thus the reliability of preparing the target material layer can be improved.

Drawings

One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, which are not to be construed as limiting the embodiments unless specifically claimed, and in order to more clearly illustrate the embodiments of the present disclosure or the concepts of the conventional art, the drawings that are required to be utilized in the embodiments will be briefly described below, it will be apparent that the drawings in the following description are merely some embodiments of the present disclosure and that other drawings may be derived from these drawings by one of ordinary skill in the art without undue effort.

FIG. 1 is a schematic diagram of a deposition chamber structure in the related art;

FIG. 2 is a schematic diagram of a curing cavity structure in the related art;

FIG. 3 is a schematic view showing a structure of a reaction chamber in the related art;

FIG. 4 is a schematic cross-sectional view of a curing mechanism in a receiving chamber in a first reaction chamber structure according to some embodiments of the present disclosure;

FIG. 5 is a schematic cross-sectional view of a curing mechanism located in a reaction chamber in a first reaction chamber structure according to some embodiments of the present disclosure;

FIG. 6 is a schematic cross-sectional view of a curing mechanism in a receiving chamber in a second reaction chamber structure according to some embodiments of the present disclosure;

FIG. 7 is a schematic cross-sectional view of an air intake mechanism according to some embodiments of the present disclosure;

FIG. 8 is a schematic top view of a containment chamber and curing mechanism provided in some embodiments of the present disclosure;

FIG. 9 is another schematic top view of a containment chamber and curing mechanism provided in some embodiments of the present disclosure;

FIG. 10 is a schematic top view of a receiving chamber and curing mechanism provided in some embodiments of the present disclosure;

FIG. 11 is a schematic cross-sectional view illustrating a third reaction chamber structure with a shutter in a retracted state according to some embodiments of the present disclosure;

FIG. 12 is a schematic cross-sectional view of a baffle plate in a stretched state in a third reaction chamber structure according to some embodiments of the present disclosure;

FIG. 13 is a schematic cross-sectional view illustrating a telescopic member in a contracted state in a fourth reaction chamber structure according to some embodiments of the present disclosure;

FIG. 14 is a schematic cross-sectional view of a fourth reaction chamber structure according to some embodiments of the present disclosure, wherein the expansion member is in a stretched state;

FIG. 15 is a schematic cross-sectional view illustrating a fifth reaction chamber structure with a mirror in a retracted state according to some embodiments of the present disclosure;

FIG. 16 is a schematic cross-sectional view of a fifth reaction chamber structure with a mirror in a stretched state according to some embodiments of the present disclosure;

FIG. 17 is a schematic cross-sectional view illustrating a second telescopic mechanism in a contracted state in a reaction chamber structure according to other embodiments of the present disclosure;

FIG. 18 is a schematic cross-sectional view of a second telescopic mechanism in a stretched state in a reaction chamber structure according to other embodiments of the present disclosure;

FIG. 19 is a schematic cross-sectional view of a rotatable solidification device in a reaction chamber structure according to still other embodiments of the present disclosure;

FIG. 20 is a schematic cross-sectional view of a rotatable solidification device in a reaction chamber structure according to still other embodiments of the present disclosure;

FIG. 21 is a schematic cross-sectional view showing a retractable solidification device in a contracted state in a reaction chamber structure according to still other embodiments of the present disclosure;

fig. 22 is a schematic cross-sectional view of a stretchable curing device in a reaction chamber structure according to still other embodiments of the present disclosure.

Detailed Description

Fig. 1 is a schematic structural view of a deposition chamber structure in the related art, and fig. 2 is a schematic structural view of a curing chamber structure in the related art.

Referring to fig. 1 and 2 in combination, the reaction chamber structure in the related art includes a deposition chamber structure 100 and a curing chamber structure 101, the deposition chamber structure 100 including a deposition chamber 110, a first vacuum transfer chamber 120, a first loading chamber 130, and a first wafer boat 140 for placing wafers 11, and the curing chamber structure 101 including a curing chamber 111, a second vacuum transfer chamber 121, a second loading chamber 131, and a second wafer boat 141 for placing wafers 11. After depositing the film layer on the wafer 11 in the deposition chamber 110, the wafer 11 needs to be moved into the curing chamber 111 after passing through the first vacuum transmission chamber 120, the first loading chamber 130, the first wafer boat 140, the second wafer boat 141, the second loading chamber 131 and the second vacuum transmission chamber 121 in order that the film layer on the surface of the wafer 11 can receive curing energy in the curing chamber 111 and be converted into a target material layer.

In the reaction cavity structure, the deposition cavity 110 for depositing the film layer and the curing cavity 111 for curing the film layer are located on two platforms, and a lot of time is lost when the wafer 11 moves from the other cavity to the curing cavity 111 after depositing the film layer in the deposition cavity 110, so that the efficiency of preparing the target material layer on the surface of the wafer 11 is low.

FIG. 3 is a schematic view of a reaction chamber structure in the related art.

Referring to fig. 3, the reaction chamber structure in the related art includes a deposition chamber 200, a vacuum transfer chamber 201, a curing chamber 202, a loading chamber 203, and a wafer boat 204 in which the wafers 11 are placed. After the wafer 11 is in the deposition chamber 200 to deposit a film on the surface of the wafer 11, the wafer 11 needs to be moved through the vacuum transfer chamber 201 into the curing chamber 202 so that the film on the surface of the wafer 11 can receive curing energy in the curing chamber 202 to be converted into a target material layer.

In the reaction chamber structure, although the deposition chamber 200 for depositing the film and the curing chamber 202 for curing the film are located in one platform, the wafer 11 still needs to be moved into the curing chamber 202 after the film is deposited in the deposition chamber 200, and a lot of time is lost in the moving process, so that the efficiency of preparing the target material layer on the surface of the wafer 11 is low.

In summary, in the reaction chamber structure in the related art, the deposition chamber and the curing chamber are two independent chambers, and after the film layer is deposited in the deposition chamber, the wafer needs to be moved to another chamber to convert the film layer into the target material layer, so that a lot of time is lost in the movement process, and the efficiency of preparing the target material layer on the wafer surface is low. Furthermore, movement of the wafer in different chambers may add defects to the wafer and/or the target material layer, making the preparation of the target material layer less reliable.

Therefore, efficiency and reliability of the target material layer prepared by the reaction chamber structure in the related art are to be improved.

In the reaction cavity structure provided by the embodiment of the disclosure, the film deposition and the film curing are performed in the same reaction cavity, during the film deposition, the curing mechanism is positioned in the accommodating cavity, after the film deposition, the curing mechanism moves into the reaction cavity along the vertical direction, and provides curing energy for the film to be converted into the target material layer, and steps of moving the wafer to other cavities and the like in the related art are not required to be added in the process, so that on one hand, a large amount of time can be saved, and on the other hand, the preparation efficiency of the target material layer can be improved, and on the other hand, the defect that the wafer is increased due to the movement of the wafer between different cavities can be avoided, and thus the reliability of preparing the target material layer can be improved.

Embodiments of the present disclosure will be described in detail below with reference to the attached drawings. However, those of ordinary skill in the art will understand that in the various embodiments of the present disclosure, numerous technical details have been set forth in order to provide a better understanding of the present disclosure. The technical solutions claimed in the present disclosure can be implemented without these technical details and with various changes and modifications based on the following embodiments.

Fig. 4 is a schematic cross-sectional structure of a curing mechanism in a receiving cavity in a first reaction cavity structure according to some embodiments of the present disclosure, and fig. 5 is a schematic cross-sectional structure of a curing mechanism in a reaction cavity in a first reaction cavity structure according to some embodiments of the present disclosure.

Referring to fig. 4 and 5 in combination, the reaction chamber structure includes a reaction chamber body 300, an air intake mechanism 301, an air extraction opening 302, a stage 303, a curing mechanism 304, and a controller (not shown). The reaction chamber body 300 includes therein a reaction chamber 310 and a receiving chamber 320 communicating with the reaction chamber 310 in a vertical direction Y, and the reaction chamber 310 is located above the receiving chamber 320. The air inlet mechanism 301 is disposed at the top of the reaction chamber 310, the air inlet mechanism 301 has an air inlet 311 and an air inlet channel 321 communicated with the air inlet 311, the air inlet channel 321 is communicated with the reaction chamber 310, and the air inlet 311 is used for communicating with an air inlet pipe for providing air. The pumping port 302 communicates with the reaction chamber 310. The carrier 303 is used for carrying the wafer 11, and the carrier 303 is located in the reaction chamber 310. The curing mechanism 304 is disposed in the accommodating chamber 320 and is movable up and down in the vertical direction Y in the reaction chamber 310, and the curing mechanism 304 is used for providing curing energy for the film layer to convert the film layer into the target material layer. The controller is connected to the curing mechanism 304 for controlling the curing mechanism 304 to move in the vertical direction Y such that the curing mechanism 304 is positioned within the receiving chamber 320 during deposition of the film, and for controlling the curing mechanism 304 to move in the vertical direction Y into the reaction chamber 310 after deposition of the film, and for controlling the curing mechanism 304 to provide curing energy to the film.

The reaction chamber structure is used for generating a target material layer on the surface of the wafer 11, and specifically, the reaction chamber body 300 is used for generating a target material layer on the surface of the wafer 11.

The wafer 11 may be a silicon wafer, a germanium wafer, a silicon germanium wafer, or the like. The wafer 11 may have high aspect ratio (aspect ratio greater than 8:1) trenches with trench openings narrower than 20nm, or the wafer 11 may have trenches with aspect ratio less than or equal to 8:1 with trench openings greater than or equal to 20nm, or the wafer 11 may have a smooth surface (i.e., no trenches).

The film layer is a film with good fluidity, and the film layer is solidified after being deposited, so that the film layer is densified and converted into a target material layer.

For example, in the case of forming a flowable silicon oxide film, the precursors for forming the film layer may be TSA (TRISILYLAMINE ) and NH ₃ (ammonia gas), and the curing gas may be a gaseous source containing oxygen atoms such as O ₃、O₂. For example, in the case of forming a positive stress silicon nitride film, the reaction gas may include SiH ₄、N₂、NH₃ or the like, and the curing gas may be an inert gas such as He or Ar.

The target material layer may be silicon oxide, silicon nitride, silicon oxynitride, or other material with a dielectric constant greater than 3.9, or fluorine-doped silicon dioxide, carbon-doped silicon dioxide, fluorocarbon, or other material with a dielectric constant less than 3.9.

The reaction chamber 310 is configured to provide a reaction space for generating a target material layer on the surface of the wafer 11, the accommodating chamber 320 is configured to accommodate the curing mechanism 304, specifically, when the curing mechanism 304 is located in the accommodating chamber 320, a reaction gas enters the reaction chamber 310 through the gas inlet mechanism 301, and deposits a film layer on the surface of the wafer 11, and when the film layer deposition is completed, the controller controls the curing mechanism 304 to move into the reaction chamber 310 along the vertical direction, and controls the curing mechanism 304 to provide curing energy for the film layer, so that the film layer is converted into the target material layer.

Fig. 6 is a schematic cross-sectional view of a curing mechanism in a receiving chamber in a second reaction chamber structure according to some embodiments of the present disclosure.

Referring to fig. 6, in some embodiments, a sectional area of the receiving chamber 320 perpendicular to the vertical direction Y may be smaller than a sectional area of the reaction chamber 310 perpendicular to the vertical direction Y. Because the accommodating cavity 320 is mainly used for accommodating the curing mechanism 304, the cross-sectional area of the accommodating cavity 320 perpendicular to the vertical direction Y can be smaller than the cross-sectional area of the reaction cavity 310 perpendicular to the vertical direction Y, so that the overall volume of the reaction cavity structure can be smaller, and the manufacturing cost of the reaction cavity structure can be saved.

In other embodiments, the cross-sectional area of the receiving chamber 320 perpendicular to the vertical direction Y may be greater than or equal to the cross-sectional area of the reaction chamber 310 perpendicular to the vertical direction Y.

The gas inlet mechanism 301 is used to supply gas to the reaction chamber 310.

The gas may be one or more of a reactive gas, a cleaning gas, or a curing gas. The reaction gas reacts on the surface of the wafer 11 to generate a film layer, the curing gas is the gas required by the film layer to receive the curing energy and convert the curing energy into the target material layer, and the cleaning gas is used for cleaning byproducts on the side wall of the reaction cavity structure.

In one example, the reactive gas may include H₂N(SiH₃)、HN(SiH₃)₂、N(SiH₃)₃、HMDSO(C₆H₁₈Si₂O, hexamethyldisiloxane) or other SiH ₃ group-containing gas, the reactive gas may further include at least one of NH ₃、N₂H₄、N₂、H₂, the reactive gas may further include other NH-group-or NH ₂ -group-containing gas, the curing gas may include oxygen-containing gas such as O ₃、O₂、H₂O、N₂O、NO₂, and the curing gas may further be inert gas such as He, ar, and the like.

It is understood that parameters such as components and contents of the reaction gas, the cleaning gas, and the curing gas may be adjusted according to practical situations, and the embodiments of the present disclosure do not limit the parameters such as components and contents of the reaction gas, the cleaning gas, and the curing gas.

Fig. 7 is a schematic cross-sectional structure of an air intake mechanism according to some embodiments of the present disclosure.

Referring to fig. 4 and 7 in combination, in some embodiments, the air inlet mechanism 301 includes a flow guide plate 331, a first air outlet plate 341 and a second air outlet plate 351, where the flow guide plate 331 has an air inlet hole 311 and a flow guide channel 3211 connected to the air inlet hole 311, the first air outlet plate 341 has a plurality of first air outlet holes 3212 penetrating through the first air outlet plate, the first air outlet holes 3212 are connected to the flow guide channel 3211, the second air outlet plate 351 and the flow guide plate 331 are respectively located at two opposite sides of the first air outlet plate 341, the second air outlet plate 351 has a plurality of second air outlet holes 3213 penetrating through the second air outlet plate 351, the second air outlet holes 3213 are communicated with the first air outlet holes 3212, the distribution density of the second air outlet holes 3213 is greater than that of the first air outlet holes 3212, and the aperture of the second air outlet holes 3213 is smaller than that of the first air outlet holes 3212, and the air inlet channel 321 is formed by the flow guide channel 3211, the first air outlet holes 3212 and the second air outlet holes 3213.

The baffle 331 is used for communicating with an air inlet pipe for supplying air, specifically, the air inlet hole 311 of the baffle 331 is used for communicating with the air inlet pipe for supplying air, and the air is guided to be distributed near the air inlet hole 311, and the air is also provided at a part far from the air inlet hole 311.

The first gas outlet plate 341 is configured to communicate with the diversion channel 3211, and is configured to transfer the gas in the diversion channel 3211 to the second gas outlet plate 351. Specifically, the first gas outlet holes 3212 of the first gas outlet plate 341 are configured to communicate with the flow guiding channels 3211, and to transmit the gas in the gas flow guiding channels 3211 to the second gas outlet plate 351.

The second gas outlet plates 351 and the flow guide plate 331 are respectively located at two opposite sides of the first gas outlet plate 341, and the second gas outlet plates 351 are used for conveying the gas in the first gas outlet plates 341 into the reaction chamber 310, specifically, the second gas outlet holes 3213 of the second gas outlet plates 351 are communicated with the first gas outlet holes 3212, so as to convey the gas in the first gas outlet plates 341 into the reaction chamber 310.

The second air outlet holes 3213 are communicated with the first air outlet holes 3212, the distribution density of the second air outlet holes 3213 is greater than that of the first air outlet holes, the aperture of the second air outlet holes 3213 is smaller than that of the first air outlet holes 3212, so that gas is roughly split through the first air outlet holes 3212 and then finely split through the second air outlet holes 3213, the gas entering the reaction cavity 310 through the air inlet mechanism 301 is uniform in the horizontal direction X as much as possible, and uniformity of a target material layer prepared on the wafer 11 is improved.

With continued reference to fig. 4, the pumping port 302 is used to remove byproducts and exhaust gases from the middle layer deposition of the reaction chamber 310.

In some embodiments, a pump may be disposed on a side of the pumping port 302 remote from the reaction chamber 310 to assist in rapid evacuation of the gas from the pumping port 302. The controller can be connected with the air pump, after the film layer is deposited on the surface of the wafer 11, before the curing mechanism 304 moves to the reaction cavity 310 in the vertical direction Y, the controller can control the air pump to remove byproducts and waste gas deposited on the film layer in the reaction cavity 310, so as to avoid the influence on the curing effect of the film layer due to the reaction gas remained in the reaction cavity 310 when the curing gas is required to be introduced into the reaction cavity 310, and the reliability of the reaction cavity structure is improved.

The stage 303 is used to place the wafer 11.

In some embodiments, a heater (not shown) may be disposed within the carrier 303 for heating the wafer 11, the heater also being coupled to a controller for controlling the heating temperature of the heater. By the arrangement, the reaction cavity structure can provide required temperature during the film deposition and also can provide required temperature during the film curing, which is beneficial to improving the practicability of the reaction cavity structure. In addition, the controller may control the heating temperature of the heater, and when the temperature required for depositing the film layer is different from the temperature required for curing the film layer, the controller may control the heating temperature of the heater, adjust the heating temperature of the heater to the temperature required for depositing the film layer during the deposition of the film layer, and adjust the heating temperature of the heater to the temperature required for curing the film layer during the curing of the film layer, thereby further improving the practicality of the reaction chamber structure.

The curing mechanism 304 is used to provide curing energy to the film layer so that the film layer can be converted into a target material layer. The curing mechanism 304 may be moved up and down in the vertical direction Y, with the curing mechanism 304 being located within the receiving chamber 320 during film deposition, and after film deposition, the curing mechanism 304 is moved up into the reaction chamber 310 in the vertical direction Y to provide the required curing energy for curing the film to be converted into the target material layer.

In some embodiments, the controller may control the curing mechanism 304 to move alternately in the containment chamber 320 and the reaction chamber 310. The deposition and curing of the film layer by the reaction cavity structure may be alternately performed, during the deposition of the film layer, the controller controls the curing mechanism 304 to be located in the accommodating cavity 320, after the film layer is deposited, the controller controls the curing mechanism 304 to move into the reaction cavity 310, after the curing mechanism 304 is controlled to provide curing energy to convert the film layer into the target material layer, the controller controls the curing mechanism 304 to move into the accommodating cavity 320, the reaction gas is again introduced and a layer of film layer is redeposited on the surface of the target material layer, after that, the controller controls the curing mechanism 304 to move into the reaction cavity 310, and controls the curing mechanism 304 to provide curing energy, so that the film layer on the surface of the target material layer is converted into the target material layer.

In a specific example, when a 500 angstrom positive stress silicon nitride layer is required to be prepared, a first silicon nitride film layer with a thickness of 170 angstrom may be deposited on the surface of the wafer 11, then the first silicon nitride film layer is moved into the reaction chamber 310 by the curing mechanism 304 to provide curing energy, so that the first silicon nitride film layer receives curing energy and converts it into a first positive stress silicon nitride layer, then the curing mechanism 304 is moved into the receiving chamber 320, a second silicon nitride film layer with a thickness of 170 angstrom is deposited on the surface of the first positive stress silicon nitride layer, then the curing mechanism 304 is moved into the reaction chamber 310 to provide curing energy, so that the second silicon nitride film layer receives curing energy and converts it into a second positive stress silicon nitride layer, then the curing mechanism 304 is moved into the receiving chamber 320, and a third silicon nitride film layer with a thickness of 170 angstrom is deposited on the surface of the second positive stress silicon nitride layer, then the curing mechanism 304 is moved into the reaction chamber 310, so that the third silicon nitride film layer receives curing energy and converts it into a third positive stress silicon nitride layer with a thickness of 500 angstrom, so as to obtain a required positive stress silicon nitride layer. In other words, the curing mechanism 304 may alternately move in the reaction chamber 310 and the receiving chamber 320 to perform three deposition and curing processes, each time depositing a silicon nitride film layer with a thickness of 170 angstroms, and finally obtaining a 500 angstrom positive stress silicon nitride layer. The film layer in each curing process is a silicon nitride film layer with the thickness of 170 angstroms, and the thickness of the silicon nitride film layer is smaller, so that the curing effect of the upper part and the lower part of each silicon nitride film layer is identical, the curing effect of the upper part and the lower part of the final positive stress silicon nitride layer can be identical, and the reliability of the positive stress silicon nitride layer prepared by using the reaction cavity structure is higher. It will be appreciated that the cured film is densified to the target material layer, so that the thickness of the cured film is slightly lower than the thickness of the film before curing, and thus, when three depositions and curing processes are performed to prepare a 500 angstrom normal stress silicon nitride layer, a silicon nitride film with a thickness of 170 angstrom needs to be deposited each time.

It will be appreciated that when the desired thickness of the target material layer is to be prepared to be thinner, the preparation of the target material layer having the same curing effect on the upper and lower portions of the desired thickness can be accomplished by moving the curing mechanism 304 and allowing the curing mechanism 304 to provide curing energy to the film layer to convert the film layer to the target material layer after the film layer has been deposited. When the desired thickness of the prepared target material layer is thicker, the alternation of depositing and curing the film layer may be completed by the alternate movement of the curing mechanism 304 in the accommodating chamber 320 and the reaction chamber 310, so as to obtain the target material layer having the desired thickness and the same curing effect of the upper and lower portions. That is, when the reaction cavity structure in the embodiment of the present disclosure prepares the target material layer, the preparation of the target material layer may be directly completed by first depositing and then curing, or the preparation of the target material layer may be completed by alternately depositing and curing multiple times, and the embodiment of the present disclosure does not limit the number of alternations between depositing the film layer and curing the film layer.

The curing mechanism 304 may be a light source curing mechanism that provides light energy, such as an ultraviolet curing mechanism, and the wavelength of the light beam provided by the light source curing mechanism may be between 100nm and 400 nm. The light beam provided by the light source curing mechanism can be of fixed wavelength, or can be of superposition of several wavelengths or a certain range of wave bands. The curing mechanism 304 may also be a thermal energy curing mechanism that provides thermal energy, and the curing mechanism 304 may also be a plasma curing mechanism that provides a plasma energy source.

Fig. 8 is a schematic top view of a receiving chamber and curing mechanism provided in some embodiments of the present disclosure.

Referring to fig. 6 and 8 in combination, in some embodiments, the receiving chamber 320 may be an annular chamber in communication with the bottom of the reaction chamber 310, and the curing mechanism 304 is circumferentially disposed within the receiving chamber 320. Compared with the structure of the cavity with the cylindrical accommodating cavity, the accommodating cavity 320 is an annular cavity, so that the volume can be saved, and the manufacturing cost of the structure of the reaction cavity is reduced. The circumferential setting of the curing mechanism can provide required curing energy for the circumferential all-around of the film layer, so that the film layer can receive the curing energy and convert the curing energy into the target material layer, and the reliability of preparing the target material layer is improved.

Fig. 9 is another schematic top view of a receiving chamber and curing mechanism provided in some embodiments of the present disclosure.

Referring to fig. 6 and 9 in combination, in some embodiments, the receiving chamber 320 may be an annular chamber in communication with the bottom of the reaction chamber 310, and the curing mechanism 304 may include a plurality of curing units 314, with the curing units 314 being circumferentially arranged within the receiving chamber 320. Compared with the structure of the cavity with the cylindrical accommodating cavity, the accommodating cavity 320 is an annular cavity, so that the volume can be saved, and the manufacturing cost of the structure of the reaction cavity is reduced. The curing mechanism 304 includes a plurality of curing devices 314, which can save the manufacturing cost of the curing mechanism 304 and facilitate reducing the manufacturing cost of the reaction cavity structure under the condition of meeting the curing energy required by converting the film layer into the target material layer.

It will be appreciated that in fig. 9, the number of curing devices is 4, and in other embodiments, the number of curing devices in the curing mechanism may be other than 4, and the number of curing devices is not limited in the embodiments of the present disclosure.

Fig. 10 is a schematic top view of a receiving chamber and curing mechanism provided in some embodiments of the present disclosure.

Referring to fig. 6 and 10 in combination, in some embodiments, the receiving chamber 320 may include a plurality of circumferentially arranged sub-receiving chambers 330, each sub-receiving chamber 330 being in communication with a bottom of the reaction chamber 310, and the curing mechanism 304 includes a plurality of curing devices 314, the curing devices 314 being disposed within the sub-receiving chambers 330.

It will be appreciated that in fig. 10, the number of sub-receiving cavities is 4, and in other embodiments, the number of sub-receiving cavities in the curing mechanism may be other than 4, and embodiments of the present disclosure are not limited to the number of sub-receiving cavities. In fig. 10, the number of solidifiers is the same as the number of sub-receiving cavities, and in other embodiments, the number of solidifiers may be different from the number of sub-receiving cavities.

Fig. 11 is a schematic cross-sectional structure of a baffle plate in a contracted state in a third reaction chamber structure according to some embodiments of the present disclosure, and fig. 12 is a schematic cross-sectional structure of a baffle plate in a stretched state in a third reaction chamber structure according to some embodiments of the present disclosure.

Referring to fig. 11 and 12 in combination, in some embodiments, the reaction chamber structure may further include a shutter 305 positioned within the receiving chamber 320, the shutter 305 being retractable in a horizontal direction X, the shutter 305 being connected to a controller, the controller controlling the shutter 305 to stretch during deposition of the film layer such that the shutter 305 obstructs access of the reaction chamber 310 to the receiving chamber 320, the controller controlling the shutter 305 to retract after deposition of the film layer such that the shutter 305 does not obstruct movement of the curing mechanism 304 in a vertical direction Y. During deposition of the film, the controller controls the shutter 305 to stretch in the horizontal direction X such that the shutter 305 blocks the passage of the reaction chamber 310 and the receiving chamber 320 to prevent the reaction gas from entering the receiving chamber 320 and contaminating the curing mechanism 304. After depositing the film, the controller controls the shutter 305 to retract in the horizontal direction X so that the curing mechanism 304 can move in the vertical direction Y so that the curing mechanism 304 can move from the accommodating chamber 320 to the reaction chamber 310 or from the reaction chamber 310 to the accommodating chamber 320. The baffle 305 is provided to prevent the reaction gas from contaminating the curing mechanism 304 without affecting the movement of the curing mechanism 304, so as to ensure the curing effect of the curing mechanism 304, thereby improving the reliability of the reaction chamber structure.

Fig. 13 is a schematic cross-sectional structure of a telescopic member in a contracted state in a fourth reaction chamber structure according to some embodiments of the present disclosure, and fig. 14 is a schematic cross-sectional structure of a telescopic member in a stretched state in a fourth reaction chamber structure according to some embodiments of the present disclosure.

Referring to fig. 13 and 14 in combination, in some embodiments, the reaction chamber structure may further include a baffle 305 and a telescoping member 315, the baffle 305 and telescoping member 315 being positioned on top of the curing mechanism 304. The telescopic member 315 is telescopic in the horizontal direction X, the telescopic member 315 is connected with the baffle 305 and used for driving the baffle 305 to move, the telescopic member 315 is connected with the controller, during film deposition, the controller controls the telescopic member 315 to stretch, the telescopic member 315 drives the baffle 305 to move, the baffle 305 is used for shielding a passage between the reaction cavity 310 and the accommodating cavity 320, after film deposition, the controller controls the telescopic member 315 to shrink, the telescopic member 315 drives the baffle 305 to move, and the baffle 305 does not block the curing mechanism 304 from moving in the vertical direction Y. During deposition of the film, the controller controls the stretching member 315 to stretch in the horizontal direction X, so that the shutter 305 blocks the passage between the reaction chamber 310 and the accommodating chamber 320, to prevent the reaction gas from entering the accommodating chamber 320 and contaminating the curing mechanism 304. After depositing the film, the controller controls the expansion member 315 to contract in the horizontal direction X so that the curing mechanism 304 can move in the vertical direction Y, so that the curing mechanism 304 can move from the accommodating chamber 320 to the reaction chamber 310 or from the reaction chamber 310 to the accommodating chamber 320. The baffle 305 is provided to prevent the reaction gas from contaminating the curing mechanism 304 without affecting the movement of the curing mechanism 304, so as to ensure the curing effect of the curing mechanism 304, thereby improving the reliability of the reaction chamber structure.

It can be understood that the reaction cavity structure may not be provided with a baffle, when the target material layer is prepared on the surface of the wafer 11 and the wafer 11 is taken out, the byproduct generated by the reaction gas may be deposited on the surface of the curing mechanism 304 at this time, and the cleaning gas may be introduced through the air inlet mechanism 301 to clean the side wall of the reaction cavity body 300, and at the same time, clean the curing mechanism 304, so as to ensure that the curing mechanism 304 can work normally in the subsequent curing process, and also improve the reliability of the reaction cavity structure.

Fig. 15 is a schematic cross-sectional structure of a mirror in a contracted state in a fifth reaction chamber structure according to some embodiments of the present disclosure, and fig. 16 is a schematic cross-sectional structure of a mirror in a stretched state in a fifth reaction chamber structure according to some embodiments of the present disclosure.

Referring to fig. 15 and 16 in combination, in some embodiments, the curing mechanism 304 may be a light source curing mechanism for providing a light beam to provide curing energy to the film, the reaction chamber structure may further include a mirror 306, the mirror 306 being positioned on top of the curing mechanism 304, a side of the mirror 306 facing away from the air intake mechanism 301 being a reflective surface 316, the reflective surface 316 being configured to reflect the light beam, the mirror 306 being retractable in a horizontal direction X, the mirror 306 being coupled to a controller, the controller being configured to control the mirror 306 to stretch during curing of the film such that at least a portion of the reflective surface 316 of the mirror 306 is facing the wafer 11, the controller being configured to control the mirror 306 to retract after curing of the film such that the mirror 306 does not block movement of the curing mechanism 304 in a vertical direction Y. The term "curing the film layer" refers to a period when the curing mechanism 304 provides curing energy to the film layer, and the term "curing the film layer" refers to a period when the film layer receives curing energy and converts the curing energy into the target material layer, and the curing mechanism 304 stops providing curing energy. During the film curing process, the controller controls the reflector 306 to stretch in the horizontal direction X, so that at least part of the reflecting surface 325 extends out of the top part of the curing mechanism 304, and the light source curing mechanism provides curing energy through the light beam, so that part of the light emitted upward by the light source curing mechanism can be reflected to the surface of the wafer 11 through the reflecting surface 316, and thus the light beam energy utilization rate of the light source curing mechanism can be increased, and the practicability of the reaction cavity structure can be improved.

In some embodiments, during deposition of the film, the controller controls the mirror 306 to stretch in the horizontal direction X such that the mirror 306 obstructs the passage of the reaction chamber 310 from the receiving chamber 320, and after deposition of the film, the controller controls the mirror 306 to shrink such that the mirror 306 does not block the movement of the curing mechanism 304 in the vertical direction Y. By such arrangement, the reflector 306 can be utilized as a baffle for blocking the passage between the reaction chamber 310 and the accommodating chamber 320 during the film deposition, so that the reflector 306 can not only increase the utilization rate of the light beam of the light source curing mechanism, but also protect the curing mechanism 304 from being polluted during the film deposition, thereby being beneficial to improving the reliability and practicability of the reaction chamber structure.

With continued reference to FIG. 4, in some embodiments, the reaction chamber structure may include a Radio Frequency (RF) power supply 307 and/or a remote plasma controller (Remote Plasma Source, RPS) 317. The rf power supply 307 is used to provide the electric field required to form the plasma. The remote plasma controller 317 is used to convert the gas into a plasma state.

The radio frequency power supply 307 may include at least one of a high frequency radio frequency power supply and a low frequency radio frequency power supply. The operating frequency of the high frequency power supply is typically above 10kHz, while the frequency of the low frequency power supply is typically below 10 kHz.

The controller is connected to the rf power supply 307 and can control the power of the rf power supply 307.

In a specific example, the target material layer is a positive stress silicon nitride layer, the reaction gases are SiH ₄、N₂ and NH ₃, the flow rate of each gas may be 0sccm-20000sccm, and the rf power supply 307 uses a high frequency power supply and a low frequency power supply. Wherein the power of the high-frequency power supply is 1W-1500W, the power of the low-frequency power supply is 0W-1000W, the pressure in the reaction cavity 310 is 0.1torr-20torr, and the temperature is 100 ℃ to 600 ℃. The stress, thickness, uniformity, optical constant, and the like of the positive stress silicon nitride layer can be adjusted by adjusting the pressure in the reaction chamber 310, the gas flow rate and gas ratio of the reaction gas, the size of the high frequency power source/the low frequency power source, and the like.

It can be understood that when the reactive gas is introduced through the gas inlet mechanism 301, the reactive gas passes through the rf power supply 307 or the remote plasma controller 317, and enters the reaction chamber 310 through the gas inlet mechanism 301 after being converted into a plasma state, and when the gas inlet mechanism 301 is introduced with the curing gas required for curing the film layer and does not need to be converted into a plasma state, the curing gas can directly enter the reaction chamber 310 through the gas inlet mechanism 302, and the curing gas does not need to pass through the rf power supply 307 and the remote plasma controller 317.

In some embodiments, the reaction chamber structure may include a ceramic sleeve 327, the ceramic sleeve 327 being positioned on a sidewall of the reaction chamber 310 for protecting the reaction chamber 310.

In the reaction cavity structure in the above embodiment, the film deposition and the film curing are performed in the same reaction cavity 310, and after the film deposition, the curing mechanism 304 may be moved in the vertical direction Y by the curing mechanism 304, so that the curing mechanism 304 is located in the reaction cavity 310, and curing energy is provided for the film to be converted into the target material layer, so that steps of moving the wafer to other cavities in the related art are not required to be added in the process, a great amount of time can be saved, and the preparation efficiency of the target material layer can be improved.

Still other embodiments of the present disclosure provide a reaction chamber structure that is substantially the same as the reaction chamber structure provided in the previous embodiments, with the main difference that the curing mechanism in the reaction chamber structure provided in the following embodiments includes at least one movable curing device. The reaction chamber mechanism will be described in detail below with reference to the accompanying drawings, and it should be noted that, for avoiding redundancy, the same or corresponding features as those of the foregoing embodiments will not be described in detail below, and in case of no contradiction, the corresponding descriptions of the foregoing embodiments are also applicable to the corresponding features of the following embodiments.

Fig. 17 is a schematic cross-sectional structure of a second telescopic mechanism in a contracted state in a reaction chamber structure according to other embodiments of the present disclosure, and fig. 18 is a schematic cross-sectional structure of a second telescopic mechanism in a stretched state in a reaction chamber structure according to other embodiments of the present disclosure.

It should be noted that, in fig. 17 and 18, the case where the curing mechanism includes two movable curing devices is illustrated, and in fact, the number of movable curing devices in the curing mechanism may be other values, and the number of movable curing devices is not limited in the embodiments of the present disclosure.

Referring to fig. 17 and 18 in combination, the reaction chamber structure includes a reaction chamber body 400, an air intake mechanism 401, an air extraction port 402, a stage 403, a curing mechanism 404, and a controller (not shown). The reaction chamber body 400 includes therein a reaction chamber 410 and a receiving chamber 420 communicating with the reaction chamber 410 in a vertical direction Y, and the reaction chamber 410 is located above the receiving chamber 420. The air inlet mechanism 401 is disposed at the top of the reaction chamber 410, the air inlet mechanism 401 has an air inlet 411 and an air inlet channel 421 communicated with the air inlet 411, the air inlet channel 421 is communicated with the reaction chamber 410, and the air inlet 411 is used for communicating with an air inlet pipe for providing air. The pumping port 402 communicates with the reaction chamber 410. The carrier 403 is used for carrying the wafer 11, and the carrier 403 is located in the reaction chamber 410. The curing mechanism 404 is disposed in the accommodating chamber 420 and is movable up and down in the vertical direction Y in the reaction chamber 410, and the curing mechanism 404 is used for providing curing energy for the film layer to convert the film layer into the target material layer. The controller is connected to the curing mechanism 404 for controlling the curing mechanism 404 to move in the vertical direction Y such that the curing mechanism 404 is positioned in the receiving chamber 420 during deposition of the film layer, and for controlling the curing mechanism 404 to move in the vertical direction Y into the reaction chamber 410 after deposition of the film layer, and for controlling the curing mechanism 404 to provide curing energy to the film layer.

It should be noted that, the reaction chamber body 400, the air inlet mechanism 401, the air exhaust port 402, the carrier 403, the rf power supply 407, the remote plasma controller 417 and the ceramic sleeve 427 in the embodiment of the disclosure may refer to the reaction chamber body 300, the air inlet mechanism 301, the air exhaust port 302, the movable carrier 303, the rf power supply 307, the remote plasma controller 317 and the ceramic sleeve 327 in the previous embodiment, which are not described herein.

In some embodiments, the curing mechanism 404 may include at least one movable curing device 424, the reaction chamber structure includes a first telescoping mechanism 408 and a second telescoping mechanism 418, the first telescoping mechanism 408 is disposed in the accommodating chamber 420, the first telescoping mechanism 408 is retractable in a vertical direction Y, the first telescoping mechanism 408 is connected to the curing mechanism 404, the first telescoping mechanism 408 is connected to a controller, the controller controls the first telescoping mechanism 408 to stretch in the vertical direction Y to drive the curing mechanism 404 to move into the reaction chamber when the wafer 11 is deposited with a film layer, and controls the first telescoping mechanism 408 to shrink in the vertical direction Y to drive the curing mechanism 404 to move into the accommodating chamber 420 when the film layer is converted into a target material layer. The first telescoping mechanism 408 is connected with the second telescoping mechanism 418, the second telescoping mechanism 418 is telescopic in the horizontal direction X, the second telescoping mechanism 418 is connected with the movable curing device 424, the second telescoping mechanism 418 is connected with the controller, when the movable curing device 424 is located in the reaction chamber 410, the controller controls the second telescoping mechanism 418 to stretch and drive the movable curing device 424 to move so that the movable curing device 424 is located right above the wafer 11, the controller controls the movable curing device 424 to provide curing energy, after the film layer is cured, the controller controls the movable curing device 424 to stop providing curing energy, and the controller controls the second telescoping mechanism 418 to shrink so that the movable curing device 424 does not block the movement of the curing mechanism 404 in the vertical direction Y.

After the film layer is deposited, the first telescopic mechanism 408 moves in the vertical direction Y to drive the movable curing device 424 to move into the reaction chamber 410, and the second telescopic mechanism 418 stretches in the horizontal direction X to drive the movable curing device 424 to move, so that the movable curing device 424 is located right above the wafer 11, and the movable curing device 424 provides curing energy for the film layer on the surface of the wafer 11, and because the movable curing device 424 is located right above the wafer 11, the curing energy received by the central area of the film layer on the surface of the wafer 11 and the edge area surrounding the central area circumferentially tend to be consistent, thereby improving the reliability of curing the film layer, and further improving the reliability of preparing the target material layer by the reaction chamber structure. After curing the film layer to convert the film layer to the target material layer, the moveable curing unit 424 ceases to provide the curing energy, the second telescoping mechanism 418 retracts in the horizontal direction X, and the first telescoping mechanism 408 retracts in the vertical direction Y, returning the moveable curing unit 424 to the receiving chamber 420. In addition, the film deposition and the film curing are performed in the same reaction chamber 410, after the film deposition, the curing mechanism can move along the vertical direction Y, so that the curing mechanism 404 is positioned in the reaction chamber 410, and curing energy is provided for the film to be converted into the target material layer, and steps of moving the wafer to other chambers and the like in the related art are not required to be added in the process, so that a great amount of time can be saved, and the preparation efficiency of the target material layer can be improved.

The first telescopic mechanism 408 is used for driving the curing mechanism 404 to move in the vertical direction Y, during the film deposition process, the first telescopic mechanism 408 contracts to enable the curing mechanism 404 to be located in the accommodating cavity 420, and after the film deposition process, the first telescopic mechanism 408 stretches to enable the curing mechanism 408 to be located in the reaction cavity 410 to provide curing energy for the film.

The second telescopic mechanism 418 is used for driving the movable curing device 424 to move in the horizontal direction X.

Still other embodiments of the present disclosure provide a reaction chamber structure that is substantially the same as the reaction chamber structure provided in the previous embodiments, with the main difference that the curing mechanism in the reaction chamber structure provided in the following embodiments includes at least one rotatable curing device. The reaction chamber mechanism will be described in detail below with reference to the accompanying drawings, and it should be noted that, for avoiding redundancy, the same or corresponding features as those of the foregoing embodiments will not be described in detail below, and in case of no contradiction, the corresponding descriptions of the foregoing embodiments are also applicable to the corresponding features of the following embodiments.

Fig. 19 is a schematic cross-sectional view of a rotatable curing device in a reaction chamber structure parallel to a vertical direction according to still another embodiment of the present disclosure, and fig. 20 is a schematic cross-sectional view of a rotatable curing device in a reaction chamber structure parallel to a horizontal direction according to still another embodiment of the present disclosure.

It should be noted that, in fig. 19 and 20, the case where the curing mechanism includes two rotatable curing devices is illustrated, and in fact, the number of rotatable curing devices in the curing mechanism may be other values, and the number of rotatable curing devices is not limited in the embodiments of the present disclosure.

Referring to fig. 19 and 20 in combination, the reaction chamber structure includes a reaction chamber body 500, an air intake mechanism 501, an air extraction opening 502, a stage 503, a curing mechanism 504, and a controller (not shown). The reaction chamber body 500 includes therein a reaction chamber 510 and a receiving chamber 520 communicating with the reaction chamber 510 in a vertical direction Y, and the reaction chamber 510 is located above the receiving chamber 520. The air inlet mechanism 501 is disposed at the top of the reaction chamber 510, the air inlet mechanism 501 has an air inlet 511 and an air inlet channel 521 communicating with the air inlet 511, the air inlet channel 521 is communicated with the reaction chamber 510, and the air inlet 511 is used for communicating with an air inlet pipe for providing air. The pumping port 502 communicates with the reaction chamber 510. The stage 503 is configured to carry a wafer 11, and the stage 503 is disposed in the reaction chamber 510. The curing mechanism 504 is disposed in the accommodating chamber 520 and is movable up and down in the vertical direction Y in the reaction chamber 510, and the curing mechanism 504 is used to provide curing energy for the film layer to convert the film layer into the target material layer. The controller is coupled to the curing mechanism 504 for controlling the curing mechanism 504 to move in the vertical direction Y such that the curing mechanism 504 is positioned within the receiving chamber 520 during deposition of the film and after deposition of the film, controlling the curing mechanism 504 to move in the vertical direction Y into the reaction chamber 510 and controlling the curing mechanism 504 to provide curing energy to the film.

It should be noted that, the reaction chamber body 500, the air inlet mechanism 501, the air exhaust port 502, the carrier 503, the rf power supply 507, the remote plasma controller 517 and the ceramic sleeve 527 in the embodiments of the disclosure may refer to the reaction chamber body 300, the air inlet mechanism 301, the air exhaust port 302, the movable carrier 303, the rf power supply 307, the remote plasma controller 317 and the ceramic sleeve 327 in the embodiments described above, and will not be described herein.

In some embodiments, curing mechanism 504 may include at least one rotatable curing device 534. The reaction cavity structure comprises a first telescopic mechanism 508 and a rotary fixing piece 509, wherein the first telescopic mechanism 508 is arranged in a reaction cavity 510, the first telescopic mechanism 508 is telescopic in the vertical direction Y, the first telescopic mechanism 508 is connected with a curing mechanism 504, the first telescopic mechanism 508 is connected with a controller, after a film layer is deposited, the controller controls the first telescopic mechanism 508 to stretch in the vertical direction Y so as to drive the curing mechanism 504 to move into the reaction cavity 510, curing energy is provided for the film layer, and after the film layer is converted into a target material layer, the controller controls the first telescopic mechanism 508 to shrink in the vertical direction Y so as to drive the curing mechanism 504 to move into a containing cavity 520. The rotary fixing member 509 is connected with the first telescopic mechanism 508, the rotary fixing member 509 is rotatably connected with the rotatable curing member 534, the controller is connected with the rotatable curing member 534, when the film layer is deposited and the curing mechanism 504 is positioned in the reaction cavity 510, the controller controls the rotatable curing member 534 to rotate around the rotary fixing member 509 to be parallel to the horizontal direction X so that at least part of the rotatable curing member 534 is positioned right above the wafer 11, the controller controls the rotatable curing member 534 to provide curing energy, after the film layer is cured, the controller controls the rotatable curing member 534 to stop providing curing energy, and the controller controls the rotatable curing member 534 to rotate around the rotary fixing member 509 to be parallel to the vertical direction Y so that the rotatable curing member 534 fits with the first telescopic mechanism 508.

After the film layer is deposited, the first telescopic mechanism 508 moves in the vertical direction Y, drives the rotatable curing device 534 to move into the reaction chamber 510, and the controller controls the rotatable controller 534 to rotate to be parallel to the horizontal direction X, so that the rotatable curing device 534 is located right above the wafer 11, and the rotatable curing device 534 provides curing energy for the film layer on the surface of the wafer 11, and since the rotatable curing device 534 is located right above the wafer 11, the curing energy received by the central area of the film layer on the surface of the wafer 11 and the edge area surrounding the central area circumferentially tend to be consistent, thereby improving the reliability of the cured film layer, and further improving the reliability of the preparation of the target material layer by the reaction chamber structure. After curing the film to convert the film to the target material, the rotatable curing device 534 stops providing the curing energy, the rotatable curing device 534 rotates to be parallel to the vertical direction Y, and the first telescoping mechanism 508 retracts in the vertical direction Y, so that the curing mechanism 504 returns to the receiving chamber 520. In addition, the film deposition and the film curing are performed in the same reaction chamber 510, after the film deposition, the curing mechanism can move along the vertical direction Y, so that the curing mechanism 504 is positioned in the reaction chamber 510, and curing energy is provided for the film to be converted into the target material layer, and steps of moving the wafer to other chambers in the related art are not required to be added in the process, so that a great amount of time can be saved, and the preparation efficiency of the target material layer can be improved.

The rotation fixing member 509 may be a rotation bearing or a slewing bearing.

Fig. 21 is a schematic cross-sectional view of a retractable curing device in a retracted state in a reaction chamber structure according to still other embodiments of the present disclosure, and fig. 22 is a schematic cross-sectional view of a retractable curing device in a stretched state in a reaction chamber structure according to still other embodiments of the present disclosure.

It should be noted that, in fig. 21 and 22, the case where the curing mechanism includes two telescopic curing units is illustrated, and in fact, the number of telescopic curing units in the curing mechanism may also be other values, and the number of telescopic curing units is not limited in the embodiments of the present disclosure.

Referring to fig. 21 and 22 in combination, the reaction chamber structure includes a reaction chamber body 600, an air intake mechanism 601, an air extraction opening 602, a stage 603, a curing mechanism 604, and a controller (not shown). The reaction chamber body includes a reaction chamber 610 and a receiving chamber 620 connected to the reaction chamber 610 in a vertical direction Y, and the reaction chamber 610 is located above the receiving chamber 620. The air inlet mechanism 601 is disposed at the top of the reaction chamber 610, the air inlet mechanism 601 has an air inlet hole 611 and an air inlet channel 621 communicating with the air inlet hole 611, the air inlet channel 621 communicates with the reaction chamber 610, and the air inlet hole 611 is used for communicating with an air inlet pipe for providing air. The pumping port 602 communicates with the reaction chamber 610. The stage 603 is configured to carry a wafer 11, and the stage 603 is disposed in the reaction chamber 610. The curing mechanism 604 is disposed in the accommodating chamber 620 and is movable up and down in the vertical direction Y in the reaction chamber 610, and the curing mechanism 604 is configured to provide curing energy to the film layer to convert the film layer into a target material layer. The controller is coupled to the curing mechanism 604 for controlling the movement of the curing mechanism 604 in the vertical direction Y such that the curing mechanism 604 is positioned within the receiving chamber 620 during deposition of the film and for controlling the movement of the curing mechanism 604 in the vertical direction Y into the reaction chamber 610 after deposition of the film and for controlling the curing mechanism 604 to provide curing energy to the film.

It should be noted that, the reaction chamber body 600, the air intake mechanism 601, the air exhaust opening 602, the carrier 603, the rf power supply 607, the remote plasma controller 617 and the ceramic kit 627 in the embodiments of the disclosure may refer to the reaction chamber body 300, the air intake mechanism 301, the air exhaust opening 302, the movable carrier 303, the rf power supply 307, the remote plasma controller 317 and the ceramic kit 327 in the embodiments described above, and will not be described herein.

In some embodiments, the curing mechanism 604 may include at least one retractable curing device 644, the retractable curing device 644 being retractable in the horizontal direction X, the retractable curing device 644 being connected to a controller, the controller controlling the retractable curing device 644 to stretch such that at least a portion of the retractable curing device 644 is directly above the wafer 11 when the curing mechanism 604 is positioned in the reaction chamber 610 after the film layer is deposited, and the controller controlling the retractable curing device 644 to provide curing energy, the controller controlling the retractable curing device 644 to cease providing curing energy when the film layer is converted to the target material layer, and the controller controlling the retractable curing device 644 to retract such that the retractable curing device 644 does not block movement of the fixing mechanism 604 in the vertical direction Y. The reaction cavity structure further comprises a first telescopic mechanism 608, wherein the first telescopic mechanism 608 is arranged in the accommodating cavity 620, the first telescopic mechanism 608 is telescopic in the vertical direction Y, the first telescopic mechanism 608 is connected with the curing mechanism 604, the first telescopic mechanism 608 is connected with the controller, when a film layer is deposited, the controller controls the first telescopic mechanism 608 to stretch in the vertical direction Y so as to drive the curing mechanism 604 to move into the reaction cavity 610, curing energy is provided for the film layer, and after the film layer is cured, the controller controls the first telescopic mechanism 608 to shrink in the vertical direction Y so as to drive the curing mechanism 604 to move into the accommodating cavity 620.

After the film layer is deposited, the first telescopic mechanism 608 moves in the vertical direction Y, so that the curing mechanism 604 is driven to move into the reaction cavity 610, the telescopic curing device 644 stretches in the horizontal direction X, so that the telescopic curing device 644 is located right above the wafer 11, and the telescopic curing device 644 provides curing energy for the film layer on the surface of the wafer 11, and since the telescopic curing device 644 is located right above the wafer 11, the curing energy received by the central area of the film layer on the surface of the wafer 11 and the edge area surrounding the central area circumferentially tend to be consistent, thereby improving the reliability of the cured film layer, and further improving the reliability of the preparation of the target material layer by the reaction cavity structure. After curing the film layer to convert the film layer to the target material layer, the retractable curing unit 644 stops providing the curing energy, the retractable curing unit 644 retracts in the horizontal direction X, and the first retracting mechanism 608 retracts in the vertical direction Y, returning the curing mechanism 604 to the receiving chamber 620.

In the reaction cavity structure of the embodiment, the film layer is deposited and the film layer is solidified in the same reaction cavity, and after the film layer is deposited, the curing mechanism can move along the vertical direction, so that the curing mechanism is positioned in the reaction cavity, curing energy is provided for the film layer to be converted into the target material layer, steps of moving the wafer to other cavities and the like in the related art are not required to be added in the process, a large amount of time is saved, the preparation efficiency of the target material layer can be improved, defects caused by movement of the wafer between different cavities can be avoided, and the reliability of preparing the target material layer can be improved.

Correspondingly, another embodiment of the disclosure also provides a deposition apparatus having the reaction cavity structure of any one of the above embodiments. The same or corresponding parts as those of the previous embodiment may be referred to for corresponding description of the previous embodiment, and detailed description thereof will be omitted.

The deposition apparatus includes a reaction chamber structure as described in any of the embodiments above.

The deposition apparatus may be used to achieve flowable chemical vapor deposition to produce a layer of target material. The deposition apparatus may also be used to achieve other vapor phase chemical depositions, such as atmospheric pressure chemical vapor deposition (APCVD, atmospheric pressure chemical vapor deposition), low pressure chemical vapor deposition (LPCVD, low pressure chemical vapor deposition), ultra high vacuum chemical vapor deposition (UHVCVD, ultrahigh vacuumchemical vapor deposition), metal organic chemical vapor deposition (MOCVD, metal-organic chemical vapor deposition), or Plasma chemical vapor deposition (PECVD, plasma-ENHANCED CHEMICAL vapor deposition), etc.

It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of implementing the disclosure, and that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the disclosure, and the scope of the disclosure should therefore be assessed as that of the appended claims.

Claims

1. A reaction chamber structure for use in a deposition apparatus, comprising:

The reaction chamber body comprises a reaction chamber and a containing chamber communicated with the reaction chamber in the vertical direction, and the reaction chamber is positioned above the containing chamber;

the air inlet mechanism is arranged at the top of the reaction cavity and is provided with an air inlet hole and an air inlet channel communicated with the air inlet hole, the air inlet channel is communicated with the reaction cavity, and the air inlet hole is used for being communicated with an air inlet pipe for providing air;

The extraction opening is communicated with the reaction cavity;

The carrier is used for carrying the wafer and is positioned in the reaction cavity;

The curing mechanism is arranged in the accommodating cavity and can move up and down along the vertical direction in the reaction cavity, and the curing mechanism is used for providing curing energy for the film layer so as to convert the film layer into a target material layer;

The controller is connected with the curing mechanism and used for controlling the curing mechanism to move in the vertical direction so that the curing mechanism is positioned in the accommodating cavity during the deposition of the film layer, controlling the curing mechanism to move into the reaction cavity in the vertical direction after the deposition of the film layer and controlling the curing mechanism to provide the curing energy for the film layer, and controlling the curing mechanism to alternately move in the accommodating cavity and the reaction cavity.

2. The reaction chamber structure of claim 1, wherein a cross-sectional area of the containment chamber perpendicular to the vertical direction is smaller than a cross-sectional area of the reaction chamber perpendicular to the vertical direction.

3. The reaction chamber structure according to claim 2, wherein the accommodating chamber is an annular chamber communicated with the bottom of the reaction chamber, and the curing mechanism is circumferentially arranged in the accommodating chamber, or comprises a plurality of curing devices circumferentially arranged in the accommodating chamber.

4. The reaction chamber structure of claim 2, wherein the containment chamber comprises a plurality of circumferentially arranged sub-containment chambers, each of the sub-containment chambers being in communication with the reaction chamber bottom, the curing mechanism comprising a plurality of curing devices disposed within the sub-containment chambers.

5. The reaction chamber structure of claim 1, wherein the reaction chamber structure further comprises:

The baffle is located hold the intracavity, the baffle is scalable in the horizontal direction, the baffle with the controller is connected, during the deposit the rete, the controller control the baffle is tensile, so that the baffle shelter from the reaction chamber with hold the passageway in chamber, after the deposit the rete, the controller control the baffle shrink, so that the baffle is not blocked curing mechanism is in vertical direction removes.

6. The reaction chamber structure of claim 1, wherein the curing mechanism is a light source curing mechanism for providing a light beam to provide the curing energy to the film layer;

The reaction cavity structure further comprises:

The reflector is positioned at the top of the curing mechanism, one surface of the reflector, which is away from the air inlet mechanism, is a reflecting surface, the reflecting surface is used for reflecting the light beam, the reflector is telescopic in the horizontal direction, the reflector is connected with the controller, the controller is used for controlling the reflector to stretch during curing of the film layer so that at least part of the reflecting surface is opposite to the wafer, and after curing of the film layer, the controller is used for controlling the reflector to shrink so that the reflector does not block the curing mechanism from moving in the vertical direction.

7. The reaction chamber structure of claim 1, wherein the curing mechanism comprises at least one movable curing device;

The reaction cavity structure further comprises:

the first telescopic mechanism is arranged in the accommodating cavity, the first telescopic mechanism is telescopic in the vertical direction and connected with the curing mechanism, the first telescopic mechanism is connected with the controller, after the film layer is deposited, the controller controls the first telescopic mechanism to stretch in the vertical direction so as to drive the curing mechanism to move into the reaction cavity, curing energy is provided for the film layer, and after the film layer is cured, the controller controls the first telescopic mechanism to shrink in the vertical direction so as to drive the curing mechanism to move into the accommodating cavity;

The first telescopic machanism with the second telescopic machanism is connected, the second telescopic machanism is scalable in the horizontal direction, the second telescopic machanism with the movable curing ware is connected, the second telescopic machanism with the controller is connected, when the movable curing ware is located in the reaction chamber, the controller control the second telescopic machanism is tensile, drives the movable curing ware removes, so that the movable curing ware is located directly over the wafer, just the controller control the movable curing ware provides the solidification energy, after the solidification the rete, the controller control the movable curing ware stops providing the solidification energy, just the controller control the second telescopic machanism contracts, so that the movable curing ware does not block the first telescopic machanism removes in the vertical direction.

8. The reaction chamber structure of claim 1, wherein the curing mechanism comprises at least one rotatable curing device;

The reaction cavity structure further comprises:

The first telescopic mechanism is arranged in the reaction cavity, the first telescopic mechanism is telescopic in the vertical direction and connected with the curing mechanism, the first telescopic mechanism is connected with the controller, after the film layer is deposited, the controller controls the first telescopic mechanism to stretch in the vertical direction so as to drive the curing mechanism to move into the reaction cavity, curing energy is provided for the film layer, and after the film layer is cured, the controller controls the first telescopic mechanism to shrink in the vertical direction so as to drive the curing mechanism to move into the accommodating cavity;

The controller is connected with the rotatable curing device, when the curing mechanism is positioned in the reaction cavity, the controller controls the rotatable curing device to rotate around the rotatable fixing device to be parallel to the horizontal direction, so that at least part of the rotatable curing device is positioned right above the wafer, the controller controls the rotatable curing device to provide the curing energy, after the film layer is cured, the controller controls the rotatable curing device to stop providing the curing energy, and the controller controls the rotatable curing device to rotate around the rotatable fixing device to be parallel to the vertical direction, so that the rotatable curing device is attached to the first telescopic mechanism.

9. A deposition apparatus comprising a reaction chamber structure according to any one of claims 1 to 8.