CN119064747A - A method, device, equipment and medium for analyzing heat accumulation of MOS tube - Google Patents
A method, device, equipment and medium for analyzing heat accumulation of MOS tube Download PDFInfo
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Abstract
The invention relates to the technical field of motor control, in particular to a method, a device, equipment and a medium for analyzing heat accumulation of a MOS tube, which are used for a vehicle-mounted motor control system, wherein the analysis method comprises the steps of obtaining a minimum test voltage and a maximum test voltage; the method comprises the steps of performing gradient test, obtaining first time, first voltage difference and first current based on the gradient test if a motor does not rotate and decompress, checking whether the first voltage difference is in a safe operation area of the MOS tube, calculating heat accumulation amount in the first time of the MOS tube based on the first time, the first voltage difference and the first current if the first voltage difference is in the safe operation area of the MOS tube, and taking the heat accumulation amount in the first time as a critical value of the heat accumulation amount of the MOS tube. Therefore, the problem that the reasons that the MOS tube is in the working voltage range but damaged in the vehicle-mounted motor control system cannot be clearly determined is solved.
Description
Technical Field
The invention relates to the technical field of motor control, in particular to a method, a device, equipment and a medium for analyzing heat accumulation of a MOS tube.
Background
The power MOS tube has the advantages of high response speed and easy control, is widely applied to electronic circuits, has the body and shadow of the power MOS tube in automobile electronics, has more severe circuit design requirements on the MOS tube by automobile-scale electronic products, and has the following factors that the MOS tube of an automobile-scale driving motor can consider the working current at the maximum load, the maximum peak current at the moment of load starting at different temperatures, the fault diagnosis of the MOS tube of the driving motor, the on-state and the off-state of the MOS tube during working, the D/S pole reverse bearing capacity of the MOS tube at the moment of motor switching-off, the average on-loss of the MOS tube during PWM control and the short-term energy accumulation of the MOS tube under extreme working conditions.
However, the prior art does not consider the MOS power loss of the abnormal power supply condition of the whole vehicle, and meanwhile, due to the difference among MOS tube individuals, although the test item of product design verification basically covers the extreme working condition in the service life cycle of the vehicle, the limited test sample piece cannot completely cover the failure possibility aiming at the individual difference. Specifically, when the MOS is in the vehicle-mounted motor control system, the MOS is damaged, although each component is in the normal operating voltage range. There is no specific analysis of this phenomenon in the prior art.
Disclosure of Invention
The invention provides a method, a device, equipment and a medium for analyzing heat accumulation of a Metal Oxide Semiconductor (MOS) tube, which are used for solving the problem that the prior art can not clearly determine the reason that the MOS tube is in a working voltage range but is damaged in a vehicle-mounted motor control system.
In a first aspect, the present invention provides a method for analyzing heat accumulation of a MOS transistor, the method being used in a vehicle-mounted motor control system, the vehicle-mounted motor system including an execution chip, a MOS transistor, a motor, and a battery, the method comprising:
Acquiring a minimum test voltage and a maximum test voltage, wherein the minimum test voltage and the maximum test voltage are input voltages of the drain electrode of the MOS tube;
performing gradient test based on the minimum test voltage and the maximum test voltage;
If the motor does not rotate and pressure is released, acquiring a first time, a first voltage difference and a first current based on gradient test, wherein the first time is the time from the opening of the MOS tube to the damage, the first voltage difference is the voltage difference between the drain electrode and the source electrode of the MOS tube, and the first current is the current flowing through the drain electrode and the source electrode of the MOS tube;
checking whether the first voltage difference is in a safe operation area of the MOS tube;
If the first voltage difference is in the safe operation area of the MOS tube, calculating the heat accumulation amount in the first time of the MOS tube based on the first time, the first voltage difference and the first current;
And taking the heat accumulation amount in the first time as a critical value of the heat accumulation amount of the MOS tube.
In some embodiments, the method further comprises:
if the motor rotates to release pressure, the MOS tube is completely started, and the MOS tube is not damaged, and the test is stopped.
In some embodiments, the method further comprises:
if the motor does not rotate and pressure is released, the first voltage difference exceeds the safe operation area of the MOS tube, the MOS tube is damaged due to the fact that the first voltage difference is too large, and the test is stopped.
In some embodiments, the obtaining the minimum test voltage and the maximum test voltage comprises:
acquiring a voltage safety strategy of the vehicle-mounted motor control system;
determining a maximum operating voltage of the vehicle-mounted motor control system based on the voltage safety strategy;
determining the maximum test voltage based on the maximum operating voltage;
And determining the voltage required by the auxiliary starting of the whole vehicle based on the voltage safety strategy, and taking the voltage required by the auxiliary starting of the whole vehicle as the minimum test voltage.
In some embodiments, the gradient test comprises:
starting to test by the minimum test voltage, and sequentially increasing a fixed voltage value until the voltage value is the maximum test voltage;
during gradient test, collecting first time, first voltage difference and first current under each voltage at fixed frequency;
And collecting the first time, the first voltage difference and the first current of the damage moment of the MOS tube.
In some embodiments, the calculating the heat accumulation amount in the first time of the MOS transistor based on the first time, the first voltage difference, and the first current includes:
;
Wherein J is the heat accumulation amount, t1 is the test start time, t2 is the test end time, For the first time, U DS is the first voltage difference, and I is the first current.
In some embodiments, the minimum test voltage is preferably 24V;
The maximum test voltage is preferably 31V.
In a second aspect, the present invention provides a MOS tube heat accumulation analysis apparatus, including:
The data acquisition module is used for acquiring the minimum test voltage and the maximum test voltage, and acquiring the first time, the first voltage difference and the first current;
The state judging module is used for monitoring whether the motor rotates to release pressure and monitoring whether the first voltage difference is in a safe operation area of the MOS tube;
And the comprehensive calculation module is used for calculating the heat accumulation amount in the first time of the MOS tube based on the first time, the first voltage difference and the first current.
In a third aspect, the present invention provides an electronic device, including a processor and a memory, where the memory stores a program that can run on the processor, and the program when executed by the processor implements the MOS tube heat accumulation analysis method of the first aspect.
In a fourth aspect, the present invention proposes a storage medium, where a computer program is stored, where the computer program, when executed by at least one processor, implements the MOS tube heat accumulation analysis method of the first aspect.
In order to solve the problem that the MOS tube in the vehicle-mounted motor control system cannot be clearly positioned in the working voltage range but causes damage in the prior art, the invention has the following advantages:
According to the technical scheme, the reason analysis of the phenomenon that each component is in the normal working voltage range but MOS damage occurs in the vehicle-mounted motor control system can be realized, the MOS damage range under the actual working condition is obtained based on the analysis result, the protection measures are formulated, and the damage condition can be effectively controlled.
Drawings
Fig. 1 shows a schematic circuit configuration of an in-vehicle motor control system;
FIG. 2 shows a flow chart of a method of MOS tube heat accumulation analysis;
FIG. 3 shows a block diagram of a device for analyzing heat concentration of a MOS tube;
Fig. 4 shows three working condition diagrams of gradient test of the vehicle-mounted motor control system.
Detailed Description
The disclosure will now be discussed with reference to several exemplary embodiments. It should be understood that these embodiments are discussed only to enable those of ordinary skill in the art to better understand and thus practice the present disclosure, and are not meant to imply any limitation on the scope of the present disclosure.
As used herein, the term "comprising" and variants thereof are to be interpreted as meaning "including but not limited to" open-ended terms. The term "based on" is to be interpreted as "based at least in part on". The terms "one embodiment" and "an embodiment" are to be interpreted as "at least one embodiment. The term "another embodiment" is to be interpreted as "at least one other embodiment". The terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "vertical", "horizontal", "transverse", "longitudinal", etc. refer to an orientation or positional relationship based on that shown in the drawings. These terms are only used to better describe the present application and its embodiments and are not intended to limit the scope of the indicated devices, elements or components to the particular orientations or to configure and operate in the particular orientations. Also, some of the terms described above may be used to indicate other meanings in addition to orientation or positional relationships, for example, the term "upper" may also be used to indicate some sort of attachment or connection in some cases. The specific meaning of these terms in the present application will be understood by those of ordinary skill in the art according to the specific circumstances. Furthermore, the terms "mounted," "configured," "provided," "connected," and "connected" are to be construed broadly. For example, they may be fixedly connected, detachably connected, or of unitary construction, they may be mechanically or electrically connected, they may be directly connected, or they may be indirectly connected through intermediaries, or they may be in internal communication between two devices, elements or components. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances. Furthermore, the terms "first," "second," and the like, are used primarily to distinguish between different devices, elements, or components (the particular species and configurations may be the same or different), and are not used to indicate or imply the relative importance and number of devices, elements, or components indicated. Unless otherwise indicated, the meaning of "a plurality" is two or more.
The embodiment discloses a heat accumulation analysis method of a MOS tube, which is used for a vehicle-mounted motor control system, as shown in fig. 1, wherein the vehicle-mounted motor system comprises a main chip, an execution chip, the MOS tube, a motor and a storage battery, and the G pole of the MOS is used for lifting GPR voltage to start the MOS after the execution chip receives a main chip instruction. The DPR monitors the D pole voltage of the MOS tube, and the value of the D pole voltage is consistent with the output voltage of the storage battery. SPR is used as a passive receiving voltage at the chip end and cannot be actively controlled by the chip.
In a first aspect, the present invention provides a method for analyzing heat accumulation in a MOS transistor, the method comprising the steps of:
Acquiring a minimum test voltage and a maximum test voltage, wherein the minimum test voltage and the maximum test voltage are input voltages of the drain electrode of the MOS tube;
performing gradient test based on the minimum test voltage and the maximum test voltage;
If the motor does not rotate and pressure is released, acquiring a first time, a first voltage difference and a first current based on gradient test, wherein the first time is the time from the opening of the MOS tube to the damage, the first voltage difference is the voltage difference between the drain electrode and the source electrode of the MOS tube, and the first current is the current flowing through the drain electrode and the source electrode of the MOS tube;
checking whether the first voltage difference is in a safe operation area of the MOS tube;
If the first voltage difference is in the safe operation area of the MOS tube, calculating the heat accumulation amount in the first time of the MOS tube based on the first time, the first voltage difference and the first current;
And taking the heat accumulation amount in the first time as a critical value of the heat accumulation amount of the MOS tube.
In this embodiment, a method for analyzing heat accumulation of a MOS tube is provided. Firstly, obtaining a minimum test voltage and a maximum test voltage, wherein the test voltage refers to an input voltage which is output by a storage battery and enters a drain electrode of an MOS tube. And secondly, performing gradient test from the minimum test voltage to the maximum test voltage, wherein the motor does not rotate and decompress, and the first voltage difference is in a safe operation area, namely the MOS tube is not completely started, and under the condition that the voltage difference between the drain electrode and the source electrode of the MOS tube is in the safe operation area, the first time, the first voltage difference and the first current are obtained. Finally, calculating the heat accumulation amount based on the first time, the first voltage difference and the first current, wherein the calculated heat accumulation amount is used as a critical value of the heat accumulation amount of the MOS tube, and the MOS tube is damaged if the heat accumulation amount exceeds the critical value under the conditions that the motor does not rotate and decompress and the first voltage difference is in a safe operation area.
Specifically, the process from opening to complete opening of the MOS transistor is a complex physical process involving gate voltage variation, parasitic capacitance charge and discharge, and drain current variation, requiring a certain time.
Specifically, the method provided by the invention is applied to a vehicle-mounted motor control system, in the vehicle-mounted motor control system applied by the method, as shown in fig. 1, the vehicle-mounted motor system comprises a main chip, an execution chip, an MOS tube, a motor and a storage battery, wherein the main chip is used for sending out a control signal for controlling the execution chip by an instruction, the execution chip is used for controlling the on-off of the MOS tube and monitoring the drain voltage of the MOS tube, and the storage battery is used for providing reference voltage, namely the voltage flowing into the drain of the MOS tube.
Specifically, when the gradient test is performed, the test voltage refers to the input voltage of the drain, and since the input voltage of the drain is provided by the storage battery and the chip monitoring is performed, the voltage at the point is used as the reference voltage for the test to be easier to control.
Specifically, in the vehicle-mounted motor control system, MOS can be started, operation of each component can be divided into three cases, as shown in figure 4, one is that the MOS tube is completely started, the motor starts to rotate, namely, the motor rotates to release pressure, the MOS tube cannot be damaged, the other is that the MOS tube is not completely started, the voltage difference between the drain electrode and the source electrode of the MOS tube is overlarge and exceeds the safe operation area of the MOS tube, so that the MOS tube is damaged, and the third is that the MOS tube is not completely started, and the voltage difference between the drain electrode and the source electrode of the MOS tube is also in the safe operation area, but the MOS tube is damaged. The first condition is the normal running condition, the MOS tube is not damaged, the investigation is not needed, the reason for the damage of the second MOS tube is clear, the reason for the damage of the MOS tube cannot be directly obtained in the third condition at a glance, therefore, the invention provides the MOS tube heat accumulation analysis method for exploring the specific reason of the third condition, and the comprehensive electrical performance and the heat accumulation performance in the software protection strategy of the MOS tube under the whole vehicle high voltage environment are calculated and used as the specifications of the subsequent product design. In fig. 4, the case where the MOS is not on is also included.
Specifically, in the case of the research of the invention, the MOS is damaged mainly because the grid electrode and the source electrode of the MOS tube are not completely opened, the voltage of the source electrode drops to a negative value rapidly at the moment, the voltage difference between the drain electrode and the source electrode increases rapidly, and meanwhile, the current cannot be quickly zeroed, so that a considerable amount of energy concentration is generated in the MOS tube, the end of the current zeroing process is not reached, and the MOS tube breaks down due to a large amount of short-term power consumption.
Specifically, the safe operation area of the MOS tube is obtained according to an operation manual of the MOS tube.
Specifically, the first time is the time from when the MOS tube is opened to damage, the first voltage difference is the voltage difference between the drain electrode and the source electrode of the MOS tube, the first current is the current flowing through the drain electrode and the source electrode of the MOS tube, and the heat accumulation amount in the first time can be obtained based on the three amounts.
Specifically, the method analyzes the damage cause of the MOS tube during normal operation to obtain a critical value of heat accumulation amount, and can formulate specific protection measures based on analysis results to effectively control the damage condition of the MOS tube.
In some embodiments, the method further comprises:
if the motor rotates to release pressure, the MOS tube is completely started, and the MOS tube is not damaged, and the test is stopped.
In this embodiment, if the motor rotates to release pressure, it indicates that the MOS tube is completely opened and no damage occurs. The normal running condition of the vehicle-mounted motor control system is not in the analysis range of the invention, and the normal running condition is required to be eliminated, so that the test is stopped so as not to influence the analysis of other conditions.
In some embodiments, the method further comprises:
if the motor does not rotate and pressure is released, the first voltage difference exceeds the safe operation area of the MOS tube, the MOS tube is damaged due to the fact that the first voltage difference is too large, and the test is stopped.
In this embodiment, if the motor does not perform rotation pressure relief, but the collected first voltage difference data exceeds the safe operation area obtained according to the MOS transistor operation manual, the MOS transistor is most likely damaged due to the fact that the voltage difference between the drain and the source of the MOS transistor exceeds the safe operation area, which is contrary to the premise that all components in the vehicle-mounted motor control system to be studied are in the normal operation condition, and is not in the analysis range of the invention, and therefore, the test is stopped when the condition is met.
In some embodiments, the obtaining the minimum test voltage and the maximum test voltage comprises:
acquiring a voltage safety strategy of the vehicle-mounted motor control system;
determining a maximum operating voltage of the vehicle-mounted motor control system based on the voltage safety strategy;
And determining the voltage required by the auxiliary starting of the whole vehicle based on the voltage safety strategy, and taking the voltage required by the auxiliary starting of the whole vehicle as the minimum test voltage.
In this embodiment, the specific method for determining the minimum test voltage and the maximum test voltage includes acquiring a voltage safety strategy of the vehicle-mounted motor control system, obtaining a maximum operating voltage according to the voltage safety strategy, and determining the maximum test voltage according to the maximum operating voltage. For example, the maximum operating voltage of the whole vehicle is 30V, and the motor is rotated and decompressed when the maximum operating voltage exceeds 30V, and the maximum testing voltage is required to be greater than 30V, preferably 31V because the motor decompression needs to be tested when testing whether the MOS is damaged or not.
Specifically, the minimum test voltage is a voltage value required by auxiliary starting of the vehicle, the voltage required by auxiliary starting of the vehicle is determined by a whole vehicle voltage safety strategy, and in the vehicle-mounted motor control system, the auxiliary starting is helpful for enriching practical scenes which can be handled by the vehicle. For example, the main battery is in low electric quantity, the emergency power supply is used for auxiliary starting, and the emergency power supply is usually in low voltage to maintain basic power consumption, so that the vehicle-mounted motor control system can be started normally under low voltage, and the voltage value required for auxiliary starting is used as the minimum test voltage.
Specifically, when the gradient test is performed, the test voltage refers to the input voltage of the drain electrode, and since the input voltage of the drain electrode is provided by the storage battery, chip monitoring is performed, and control is easy.
Specifically, the voltage safety strategy of the vehicle-mounted motor control system is a systematic and integral safety strategy, and many factors to be considered, such as MOS on/off time, G pole lifting/off time of an execution chip, motor current rising and falling time, control frequency of software and the like, are needed to be considered. According to the related factors, the system gives a maximum operating voltage value so as to ensure that all components in the system can normally operate.
Specifically, the test voltage is controlled in the safe operation area of the system in the mode, which accords with the object to be researched in the invention, and is convenient for exploring the reason of MOS damage under the condition that all components in the vehicle-mounted motor control system are in normal operation.
In some embodiments, the gradient test comprises:
starting to test by the minimum test voltage, and sequentially increasing a fixed voltage value until the voltage value is the maximum test voltage;
during gradient test, collecting first time, first voltage difference and first current under each voltage at fixed frequency;
And collecting the first time, the first voltage difference and the first current of the damage moment of the MOS tube.
In this embodiment, a gradient test mode is shown, i.e. the test is started from the minimum test voltage, and after the test analysis of the minimum test voltage is completed, the test and the analysis are performed by sequentially increasing the fixed voltage value until the final test voltage value reaches the maximum test voltage.
Specifically, the fixed voltage value can be selected according to the system environment where the MOS transistor is located, and in the present invention, 1V is preferable.
Specifically, during testing, a first time, a first voltage difference, and a first current are collected at a fixed frequency. The method can be compared with the first time, the first voltage difference and the first current of the damage moment in an analysis way, and is favorable for analyzing the damage reason of the MOS tube and eliminating related error options. For example, by comparing the time from the MOS on to the damage or the complete on of each test condition, the condition that the MOS is damaged when the MOS tube is not completely opened can be deduced, and by comparing the time of the MOS damage and the voltage and current before the MOS damage, whether the MOS tube is in a safe operation area, whether other anomalies such as short circuit and the like occur can be deduced.
Specifically, for example, as shown in table 1, the data of the MOS on time and V GS in the vehicle-mounted motor control system are shown by collecting the related data, and the time for the MOS tube used in the test to be on is 240us, and the time for the MOS tube to be completely on is 800us, which means that the MOS rear end in the system is connected with the motor, and the influence of the inductance of the motor itself causes a certain delay in the current rising.
Table 1 MOS open time and data for V GS
Specifically, as shown in table 2, performance comparison of MOS transistors of different brands and different models in the same system is shown by collecting related data, and by comparing the V GS switching time of the MOS transistor with damage in table 2, the MOS on time in table 1 can be compared, and the gate and source of the MOS transistor with damage in the test are not fully turned on, i.e. the MOS transistor is not fully turned on.
TABLE 2 data of performance of MOS transistors of various brands and models in the same system
In some embodiments, the calculating the heat accumulation amount in the first time of the MOS transistor based on the first time, the first voltage difference, and the first current includes:
;
Wherein J is the heat accumulation amount, t1 is the test start time, t2 is the test end time, For the first time, U DS is the first voltage difference, and I is the first current.
In the present embodiment, a calculation formula for calculating the heat accumulation amount in the first time is proposed:
。
Specifically, the formula shows that the heat accumulated by the MOS tube in the first time is in the period from the beginning to the end of the test, and when the heat exceeds the threshold value, the MOS tube is damaged.
Specifically, based on the calculation result, a corresponding control method may be formulated to avoid the occurrence of MOS damage.
In some embodiments, the minimum test voltage is preferably 24V;
The maximum test voltage is preferably 31V.
In this embodiment, the minimum test voltage is preferably 24V and the maximum test voltage is preferably 31V according to the voltage safety policy of the whole system.
In a second aspect, the present invention provides a MOS tube heat accumulation analysis apparatus, including:
The data acquisition module is used for acquiring the minimum test voltage and the maximum test voltage, and acquiring the first time, the first voltage difference and the first current;
The state judging module is used for monitoring whether the motor rotates to release pressure and monitoring whether the first voltage difference is in a safe operation area of the MOS tube;
And the comprehensive calculation module is used for calculating the heat accumulation amount in the first time of the MOS tube based on the first time, the first voltage difference and the first current.
In a third aspect, the present invention provides an electronic device, including a processor and a memory, where the memory stores a program that can run on the processor, and the program when executed by the processor implements the MOS tube heat accumulation analysis method of the first aspect.
In a fourth aspect, the present invention proposes a storage medium, where a computer program is stored, where the computer program, when executed by at least one processor, implements the MOS tube heat accumulation analysis method of the first aspect.
In summary, through the analysis method, the reason analysis of the phenomenon that each component is in the normal working voltage range but MOS damage occurs in the vehicle-mounted motor control system can be realized, the MOS damage range under the actual working condition is obtained based on the analysis result, the protection measures are formulated, and the damage condition can be effectively controlled.
Those of ordinary skill in the art will appreciate that the modules and algorithm steps described in connection with the embodiments disclosed herein can be implemented as electronic hardware, or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
It will be clearly understood by those skilled in the art that, for convenience and brevity of description, specific working procedures of the apparatus and device described above may refer to corresponding procedures in the foregoing method embodiments, which are not described herein again.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other manners. For example, the apparatus embodiments described above are merely illustrative, and for example, the division of the modules is merely a logical function division, and there may be additional divisions when actually implemented, for example, multiple modules or components may be combined or integrated into another system, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or modules, which may be in electrical, mechanical, or other forms.
The modules described as separate components may or may not be physically separate, and components shown as modules may or may not be physical modules, i.e., may be located in one place, or may be distributed over a plurality of network modules. Some or all of the modules can be selected according to actual needs to achieve the purpose of the embodiment of the invention.
In addition, each functional module in the embodiment of the present invention may be integrated in one processing module, or each module may exist alone physically, or two or more modules may be integrated in one module.
The functions, if implemented in the form of software functional modules and sold or used as a stand-alone product, may be stored in a computer-readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art or in a part of the technical solution in the form of a software product stored in a storage medium, comprising several instructions for causing a computer device (which may be a personal computer, a server, a network device, etc.) to perform all or part of the steps of the method for energy saving signal transmission/reception of the various embodiments of the present invention. The storage medium includes various media capable of storing program codes such as a U disk, a mobile hard disk, a ROM, a RAM, a magnetic disk or an optical disk.
The above description is only illustrative of the preferred embodiments of the present application and of the principles of the technology employed. It will be appreciated by persons skilled in the art that the scope of the application referred to in the present application is not limited to the specific combinations of the technical features described above, but also covers other technical features formed by any combination of the technical features described above or their equivalents without departing from the inventive concept. Such as the above-mentioned features and the technical features disclosed in the present application (but not limited to) having similar functions are replaced with each other.
It should be understood that, the sequence numbers of the steps in the summary and the embodiments of the present invention do not necessarily mean the order of execution, and the execution order of the processes should be determined by the functions and the internal logic, and should not be construed as limiting the implementation process of the embodiments of the present invention. The foregoing description of implementations of the present disclosure has been presented for purposes of illustration and description. The foregoing description is not intended to be exhaustive or to limit the disclosure to the precise form disclosed, and modifications and variations are possible in light of the above teachings or may be acquired from practice of the disclosure. The embodiments were chosen and described in order to explain the principles of the present disclosure and its practical application to enable one skilled in the art to utilize the present disclosure in various embodiments and with various modifications as are suited to the particular use contemplated.
Claims (10)
1. The MOS tube heat accumulation analysis method is characterized by being used for a vehicle-mounted motor control system, wherein the vehicle-mounted motor system comprises an execution chip, an MOS tube, a motor and a storage battery, and the analysis method comprises the following steps:
Acquiring a minimum test voltage and a maximum test voltage, wherein the minimum test voltage and the maximum test voltage are input voltages of the drain electrode of the MOS tube;
performing gradient test based on the minimum test voltage and the maximum test voltage;
If the motor does not rotate and pressure is released, acquiring a first time, a first voltage difference and a first current based on gradient test, wherein the first time is the time from the opening of the MOS tube to the damage, the first voltage difference is the voltage difference between the drain electrode and the source electrode of the MOS tube, and the first current is the current flowing through the drain electrode and the source electrode of the MOS tube;
checking whether the first voltage difference is in a safe operation area of the MOS tube;
If the first voltage difference is in the safe operation area of the MOS tube, calculating the heat accumulation amount in the first time of the MOS tube based on the first time, the first voltage difference and the first current;
And taking the heat accumulation amount in the first time as a critical value of the heat accumulation amount of the MOS tube.
2. The method of analyzing heat accumulation in a MOS transistor of claim 1, further comprising:
if the motor rotates to release pressure, the MOS tube is completely started, and the MOS tube is not damaged, and the test is stopped.
3. The method of analyzing heat accumulation in a MOS transistor of claim 1, further comprising:
if the motor does not rotate and pressure is released, the first voltage difference exceeds the safe operation area of the MOS tube, the MOS tube is damaged due to the fact that the first voltage difference is too large, and the test is stopped.
4. The method for analyzing heat accumulation in a MOS transistor according to claim 1, wherein the step of obtaining the minimum test voltage and the maximum test voltage comprises:
acquiring a voltage safety strategy of the vehicle-mounted motor control system;
determining a maximum operating voltage of the vehicle-mounted motor control system based on the voltage safety strategy;
determining the maximum test voltage based on the maximum operating voltage;
And determining the voltage required by the auxiliary starting of the whole vehicle based on the voltage safety strategy, and taking the voltage required by the auxiliary starting of the whole vehicle as the minimum test voltage.
5. The method for analyzing heat accumulation of MOS transistor according to claim 1, the gradient test is characterized by comprising the following steps:
starting to test by the minimum test voltage, and sequentially increasing a fixed voltage value until the voltage value is the maximum test voltage;
during gradient test, collecting first time, first voltage difference and first current under each voltage at fixed frequency;
And collecting the first time, the first voltage difference and the first current of the damage moment of the MOS tube.
6. The method for analyzing heat accumulation in a MOS transistor according to claim 1, wherein the calculating the heat accumulation amount in the first time of the MOS transistor based on the first time, the first voltage difference and the first current comprises the following calculation formula:
;
Wherein J is the heat accumulation amount, t1 is the test start time, t2 is the test end time, For the first time, U DS is the first voltage difference, and I is the first current.
7. The method for analyzing heat accumulation of MOS transistor as set forth in claim 4, wherein,
The minimum test voltage is preferably 24V;
The maximum test voltage is preferably 31V.
8. An MOS tube heat accumulation analysis device, comprising:
The data acquisition module is used for acquiring a minimum test voltage and a maximum test voltage, and acquiring a first time, a first voltage difference and a first current;
The state judging module is used for monitoring whether the motor rotates to release pressure and monitoring whether the first voltage difference is in a safe operation area of the MOS tube;
And the comprehensive calculation module is used for calculating the heat accumulation amount in the first time of the MOS tube based on the first time, the first voltage difference and the first current.
9. An electronic device comprising a processor and a memory, the memory storing a program executable on the processor, the program when executed by the processor implementing the MOS transistor heat accumulation analysis method of any one of claims 1 to 7.
10. A storage medium having a computer program stored thereon, which when executed by at least one processor, implements the MOS tube heat accumulation analysis method of any one of claims 1 to 7.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6320275B1 (en) * | 1998-07-03 | 2001-11-20 | Hitachi, Ltd. | Power-feed control apparatus provided in a vehicle |
| US10126354B1 (en) * | 2017-06-28 | 2018-11-13 | Globalfoundries Inc. | Assessment of HCI in logic circuits based on AC stress in discrete FETs |
| CN110988641A (en) * | 2019-12-06 | 2020-04-10 | 武汉大学 | IGBT module junction temperature online estimation circuit system and method |
| CN113147477A (en) * | 2021-05-11 | 2021-07-23 | 万帮数字能源股份有限公司 | Management system for power distribution unit of high-power direct-current charger |
| KR20230064307A (en) * | 2021-11-03 | 2023-05-10 | 아주대학교산학협력단 | Method of predicting life time of transistor |
| US20240103090A1 (en) * | 2022-09-27 | 2024-03-28 | Infineon Technologies Ag | Determining the remaining useful life of power modules |
-
2024
- 2024-10-31 CN CN202411539469.2A patent/CN119064747B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6320275B1 (en) * | 1998-07-03 | 2001-11-20 | Hitachi, Ltd. | Power-feed control apparatus provided in a vehicle |
| US10126354B1 (en) * | 2017-06-28 | 2018-11-13 | Globalfoundries Inc. | Assessment of HCI in logic circuits based on AC stress in discrete FETs |
| CN110988641A (en) * | 2019-12-06 | 2020-04-10 | 武汉大学 | IGBT module junction temperature online estimation circuit system and method |
| CN113147477A (en) * | 2021-05-11 | 2021-07-23 | 万帮数字能源股份有限公司 | Management system for power distribution unit of high-power direct-current charger |
| KR20230064307A (en) * | 2021-11-03 | 2023-05-10 | 아주대학교산학협력단 | Method of predicting life time of transistor |
| US20240103090A1 (en) * | 2022-09-27 | 2024-03-28 | Infineon Technologies Ag | Determining the remaining useful life of power modules |
Non-Patent Citations (3)
| Title |
|---|
| GANG HE 等: "Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer", 《RSC ADVANCES》, vol. 9, no. 58, 31 December 2019 (2019-12-31), pages 33800 * |
| 刘冰洁: "双轴应变硅MOS器件的自热效应研究", 《中国优秀硕士学位论文全文数据库信息科技辑》, no. 7, 15 July 2011 (2011-07-15), pages 1 - 56 * |
| 张凯 等: "三相全桥电路中功率MOS管失效原因分析", 《计算机技术与发展》, vol. 23, no. 6, 30 June 2013 (2013-06-30), pages 208 - 210 * |
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