CN119060692B - Pretreatment liquid applied to semiconductor substrate and preparation method thereof - Google Patents
Pretreatment liquid applied to semiconductor substrate and preparation method thereof Download PDFInfo
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- CN119060692B CN119060692B CN202411555928.6A CN202411555928A CN119060692B CN 119060692 B CN119060692 B CN 119060692B CN 202411555928 A CN202411555928 A CN 202411555928A CN 119060692 B CN119060692 B CN 119060692B
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- 239000007788 liquid Substances 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000002113 nanodiamond Substances 0.000 claims abstract description 106
- 239000002245 particle Substances 0.000 claims abstract description 99
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- 238000000034 method Methods 0.000 claims abstract description 41
- 230000008569 process Effects 0.000 claims abstract description 39
- 239000002270 dispersing agent Substances 0.000 claims abstract description 36
- 239000002798 polar solvent Substances 0.000 claims abstract description 32
- 239000000375 suspending agent Substances 0.000 claims abstract description 29
- 239000002344 surface layer Substances 0.000 claims abstract description 12
- 239000000243 solution Substances 0.000 claims description 73
- 238000003756 stirring Methods 0.000 claims description 31
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- 238000001132 ultrasonic dispersion Methods 0.000 claims description 23
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- 239000002994 raw material Substances 0.000 claims description 19
- 239000002253 acid Substances 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 12
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 229920002125 Sokalan® Polymers 0.000 claims description 5
- 238000001723 curing Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
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- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 4
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 4
- 229920000141 poly(maleic anhydride) Polymers 0.000 claims description 4
- 238000007781 pre-processing Methods 0.000 claims description 4
- 229920001285 xanthan gum Polymers 0.000 claims description 4
- 239000000230 xanthan gum Substances 0.000 claims description 4
- 235000010493 xanthan gum Nutrition 0.000 claims description 4
- 229940082509 xanthan gum Drugs 0.000 claims description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 239000000440 bentonite Substances 0.000 claims description 3
- 229910000278 bentonite Inorganic materials 0.000 claims description 3
- 229940092782 bentonite Drugs 0.000 claims description 3
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 claims description 3
- 229960001631 carbomer Drugs 0.000 claims description 3
- 229940071826 hydroxyethyl cellulose Drugs 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229920002401 polyacrylamide Polymers 0.000 claims description 3
- 229920000767 polyaniline Polymers 0.000 claims description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 3
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 238000013007 heat curing Methods 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229920000128 polypyrrole Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 2
- 238000000227 grinding Methods 0.000 abstract description 19
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- 238000005498 polishing Methods 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
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- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention provides a pretreatment liquid applied to a semiconductor substrate and a preparation method thereof, wherein the pretreatment liquid applied to the semiconductor substrate comprises a nano diamond abrasive, a dispersing agent, a pH regulator, a suspending agent and a polar solvent, wherein the nano diamond abrasive is provided with a surface layer, the surface layer comprises a conductive hydrophilic coating, the nano diamond abrasive accounts for 0.1-2% by weight, the dispersing agent accounts for 1-5% by weight, the pH regulator accounts for 0.5-2% by weight, the suspending agent accounts for 0.5-3% by weight, and the balance is the polar solvent. The conductive hydrophilic coating of the nano diamond particles forms a conductive coating on the surfaces of the nano diamond particles, so that the conductivity in the grinding process is improved, and the static electricity accumulation is reduced. In particular, in the high-speed fine grinding process, reducing static electricity can prevent particle agglomeration and improve grinding precision and stability. The conductive hydrophilic coating also makes the particles have better hydrophilicity, and improves the dispersibility and stability of the particles in solution.
Description
Technical Field
The invention belongs to the technical field of semiconductor processing, and particularly relates to pretreatment liquid applied to a semiconductor substrate and a preparation method thereof.
Background
In a semiconductor device, a semiconductor substrate refers to a base of material used to support and fabricate the semiconductor device, typically a wafer or substrate having a thickness and flatness. It is used as the basic material for crystal growth, photoetching, deposition and other processes in the manufacture of semiconductor device, and is widely used in the production of integrated circuit, LED, micro electromechanical system (MEMS), radio Frequency (RF) device, etc. The choice of semiconductor substrate is very important because it directly affects the performance, reliability and production cost of the device. Common semiconductor substrate materials include higher hardness materials such as silicon, gallium arsenide, silicon carbide, sapphire, diamond, and the like.
In the related art, in order to remarkably reduce the surface roughness of a semiconductor substrate and help to obtain a high-precision surface polishing effect, nano-scale high-hardness particles are selected as abrasive materials for performing pretreatment processes such as grinding, polishing and the like. However, the nano-scale abrasive has extremely high specific surface area, so that the combined action of van der Waals force, electrostatic force and surface energy among particles is more remarkable, and the particles are easy to interact with each other to form agglomeration, so that the dispersibility is poor.
Disclosure of Invention
The invention aims to solve the technical problems that abrasive materials are easy to agglomerate and poor in dispersibility in a pretreatment liquid.
The pretreatment liquid for the semiconductor substrate comprises a nano diamond abrasive, a dispersing agent, a pH regulator, a suspending agent and a polar solvent, wherein the nano diamond abrasive is provided with a surface layer, the surface layer comprises a conductive hydrophilic coating, the nano diamond abrasive accounts for 0.1-2% by weight, the dispersing agent accounts for 1-5% by weight, the pH regulator accounts for 0.5-2% by weight, the suspending agent accounts for 0.5-3% by weight, and the balance is the polar solvent.
In some embodiments of the invention, the dispersant comprises at least one of polyacrylic acid, polymaleic anhydride, acrylic acid/2-propenyl sulfonic acid copolymer, polyacrylamide;
the pH regulator comprises at least one of sodium hydroxide, potassium hydroxide, triethanolamine and ammonia water;
The suspending agent comprises at least one of hydroxyethyl cellulose, xanthan gum, carbomer and bentonite;
the polar solvent comprises at least one of deionized water, ethanol, acetone and isopropanol.
The invention provides a preparation method for preparing the pretreatment liquid applied to a semiconductor substrate, which comprises the following steps:
s1, preprocessing a nano diamond raw material to obtain a nano diamond abrasive;
s2, adding the nano diamond abrasive into a polar solvent containing a dispersing agent and a pH regulator in batches to obtain a mixed solution;
s3, adding a suspending agent into the mixed solution, and performing ultrasonic dispersion to obtain a pretreatment solution.
In some embodiments of the invention, the step S1 includes:
S1.1, placing a nano diamond raw material into a plasma cavity, vacuumizing, introducing oxygen, and starting a plasma excitation source to perform activation treatment;
S1.2, transferring the nano diamond raw material after the activation treatment to an acid washing solution, and sequentially washing, filtering and drying to obtain surface modified nano diamond particles;
S1.3, transferring the surface modified nano diamond particles into a conductive hydrophilic coating solution, heating and stirring, then carrying out a deposition lifting process, and drying and thermally curing to obtain the nano diamond abrasive with the conductive hydrophilic coating.
In some embodiments of the present invention, in the step S1.1, the oxygen flow is 20-50 sccm;
in the step S1.2, the acid washing solution comprises strong acid and hydrogen peroxide, wherein the strong acid comprises at least one of sulfuric acid, nitric acid and hydrochloric acid, and the volume ratio of the strong acid to the hydrogen peroxide is 1:1-2;
in the step S1.3, the conductive hydrophilic coating solution includes at least one of carboxylated polyvinylpyrrolidone, polyethylene glycol modified polyaniline, and polyethylene glycol modified polypyrrole.
In some embodiments of the invention, the surface layer further comprises an antistatic hydrophilic coating provided on the surface of the conductive hydrophilic coating;
after said step S1.3, further comprising:
S1.4, transferring the nano diamond abrasive with the conductive hydrophilic coating into a couplant solution, and sequentially stirring, filtering and drying;
S1.5, transferring the dried nano diamond abrasive to electrostatic electret equipment, carrying out an electrostatic electret process, and slowly reducing the pressure and the temperature after the electret is finished to obtain the nano diamond abrasive with charges on the surface;
S1.6, transferring the nano diamond abrasive with charges on the surface into an antistatic hydrophilic coating solution, heating and stirring, and then carrying out a deposition lifting process, and obtaining the nano diamond abrasive with the surface layer after heat curing.
In some embodiments of the present invention, in the step S1.5, the antistatic hydrophilic coating solution includes at least one of a polysulfonabetaine, a quaternary ammonium salt polymer, a polyethylene glycol modified polyurethane, and a polyethylene glycol modified polystyrene;
In the step S1.6, the electric field intensity is 10-25 kV/cm, the residence time is 10-30 min, the ambient relative humidity is 30-50%, and the residence temperature is 20-25 ℃.
In some embodiments of the invention, the step S2 includes:
S2.1, adding a dispersing agent and a pH regulator into a part of polar solvent to obtain a pre-solution;
S2.2, adding the nano diamond abrasive into the pre-solution in batches, and simultaneously, alternately stirring at high and low speed;
S2.3, adding the rest polar solvent and stirring to obtain a mixed solution.
In some embodiments of the invention, the step S3 includes:
s3.1, transferring the mixed solution into an ice bath container and transferring into ultrasonic equipment for ultrasonic dispersion;
s3.2, filtering the mixed solution after ultrasonic dispersion is completed;
S3.3, adding a suspending agent into the mixed solution after the filtration is completed, and performing ultrasonic dispersion again to obtain a pretreatment solution.
Compared with the prior art, the pretreatment liquid applied to the semiconductor substrate and the preparation method thereof have the beneficial effects that:
The conductive hydrophilic coating of the nano diamond particles forms a conductive coating on the surfaces of the nano diamond particles, so that the conductivity in the grinding process is improved, and the static electricity accumulation is reduced. In particular, in the high-speed fine grinding process, reducing static electricity can prevent particle agglomeration and improve grinding precision and stability. The conductive hydrophilic coating also ensures that the particles have better hydrophilicity, improves the dispersibility and stability of the particles in solution, and ensures the consistency of the liquid in processing.
In addition, the pretreatment liquid optimizes the formula of the liquid by combining the nano diamond abrasive, the dispersing agent, the pH regulator and the suspending agent in proper proportion, so that the pretreatment liquid has longer storage life and stability under different environments, is not easy to generate energy attenuation, and reduces the requirement of frequently replacing the pretreatment liquid.
Drawings
FIG. 1 is a schematic flow chart of a method for preparing a pretreatment liquid applied to a semiconductor substrate according to an embodiment of the present invention;
fig. 2 is a partial flow chart of a preparation method of a pretreatment liquid applied to a semiconductor substrate in an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The invention provides a pretreatment liquid applied to a semiconductor substrate, which comprises a nano diamond abrasive, a dispersing agent, a pH regulator, a suspending agent and a polar solvent, wherein the nano diamond abrasive is provided with a surface layer, the surface layer comprises a conductive hydrophilic coating, the nano diamond abrasive accounts for 0.1-2% by weight, the dispersing agent accounts for 1-5% by weight, the pH regulator accounts for 0.5-2% by weight, the suspending agent accounts for 0.5-3% by weight, and the balance is the polar solvent.
The pretreatment liquid can effectively reduce the mechanical stress of the semiconductor substrate in the processing process, reduce the occurrence of surface defects and microcracks of the substrate, and further improve the quality and service life of the substrate material.
The extremely small particle size and the surface coating of the nano diamond abrasive material enable the nano diamond abrasive material to have higher surface contact area and even cutting effect, and can carry out fine grinding on a semiconductor substrate and reduce the surface roughness. When the pretreatment liquid is used, the surface grinding precision of the semiconductor substrate is higher, and lower surface roughness can be realized, so that the quality of subsequent processing is improved. The pretreatment liquid optimizes the formula of the liquid by combining the nano diamond abrasive, the dispersing agent, the pH regulator and the suspending agent in proper proportion, so that the pretreatment liquid has longer storage life and stability under different environments, is not easy to generate energy attenuation, and reduces the requirement of frequently replacing the pretreatment liquid.
The conductive hydrophilic coating of the nano diamond particles forms a conductive coating on the surfaces of the nano diamond particles, so that the conductivity in the grinding process is improved, and the static electricity accumulation is reduced. In particular, in the high-speed fine grinding process, reducing static electricity can prevent particle agglomeration and improve grinding precision and stability. The conductive hydrophilic coating also ensures that the particles have better hydrophilicity, improves the dispersibility and stability of the particles in solution, and ensures the consistency of the liquid in processing.
The use of the dispersing agent can effectively prevent the agglomeration of the nano diamond particles in the pretreatment liquid, ensure the uniform dispersion of the particles in the solution and enhance the dispersion stability of the abrasive. The dispersed nano diamond particles can be more uniformly acted on the semiconductor substrate, a more uniform grinding effect is provided, the non-uniformity in the processing process is reduced, and the surface treatment precision is improved.
The addition of the suspending agent increases the viscosity of the liquid, prevents the nano diamond particles from sedimentation in the storage and use processes, ensures that the particles can be suspended in the solution for a long time, ensures that the particles are uniformly distributed in the use process of the pretreatment liquid, and does not generate layering phenomenon. By means of the suspension stability, the pretreatment liquid can maintain the performance of the pretreatment liquid for a long time, and the cleaning and redispersion requirements caused by particle deposition are reduced.
The use of a pH adjustor maintains the pre-treatment fluid at an appropriate pH range (e.g., 6-8) to ensure the chemical stability of the dispersant, suspending agent, and nanodiamond particle surface. The proper pH value can prevent agglomeration, oxidation or chemical inactivation of particles and keep the liquid performance stable. The pH adjustment also protects the semiconductor substrate from corrosion while improving the compatibility of the pretreatment liquid with the diamond material.
Specifically, the dispersing agent comprises at least one of polyacrylic acid, polymaleic anhydride, acrylic acid/2-propenyl sulfonic acid copolymer and polyacrylamide;
The pH regulator comprises at least one of sodium hydroxide, potassium hydroxide, triethanolamine and ammonia water;
The suspending agent comprises at least one of hydroxyethyl cellulose, xanthan gum, carbomer and bentonite;
The polar solvent comprises at least one of deionized water, ethanol, acetone, and isopropanol.
Example 1:
Referring to fig. 1, in embodiment 1 of the present invention, a preparation method is provided for preparing a pretreatment liquid applied to a semiconductor substrate, the preparation method includes the steps of:
S1, preprocessing the nano diamond raw material to obtain the nano diamond abrasive.
The step S1 comprises the following steps:
S1.1, placing the nano diamond raw material into a plasma cavity, vacuumizing, introducing oxygen, and starting a plasma excitation source to perform activation treatment. Wherein the oxygen flow is 30sccm, the radio frequency power is set to 150W, the activation treatment time is 15min, and the particle size of the nano diamond raw material is 200 nm.
The plasma equipment comprises a plasma cavity and a plasma excitation source, wherein the plasma excitation source is used for introducing gas to perform plasma treatment, and the plasma excitation source applies an electric field or a magnetic field to excite the gas into a plasma state through electric energy.
The specific structure of the plasma device in the embodiment of the invention is well known to those skilled in the art, and the improvement point of the invention mainly focuses on the application of plasma treatment to the nano-diamond raw material, and oxygen-containing groups (such as hydroxyl groups, carboxyl groups and the like) are introduced to the surface of the nano-diamond particles through oxygen plasma activation treatment to increase surface active groups. Thus, the binding capacity of the particles and the coating material can be obviously enhanced, and the adhesive force of the particles and the hydrophilic conductive coating is improved, so that the uniformity and the firmness of the subsequent coating are enhanced. The activation treatment can also remove organic pollutants on the surfaces of the particles, thereby further improving the dispersion effect of the particles in the coating solution.
S1.2, transferring the nano diamond raw material after the activation treatment into an acid washing solution, and then washing, filtering and drying the nano diamond raw material in sequence to obtain the surface modified nano diamond particles. The pickling solution is a mixed solution of nitric acid and hydrogen peroxide in a ratio of 1:1, and the pickling solution is soaked for 10min.
Through acid washing treatment, metal ion residues and other impurities on the surfaces of the nano-diamond can be effectively removed, and the purity of the particles is further improved. The washing, filtering and drying processes are helpful for ensuring that the surfaces of the nano particles are free from residual impurities and acid liquor, and ensuring the effect of the subsequent coating process.
S1.3, transferring the surface modified nano diamond particles into a conductive hydrophilic coating solution, heating and stirring, then carrying out a deposition lifting process, and drying and thermally curing to obtain the nano diamond abrasive with the conductive hydrophilic coating. The conductive hydrophilic coating solution may be a 5% carboxylated polyvinylpyrrolidone solution, stirred and heated to 60 ℃ for a period of 1 hour.
The deposition lift-off process is a coating technique commonly used to deposit a uniform thin film on the surface of a substrate. The coating is deposited uniformly on the surface by immersing the substrate or particles in the coating solution and pulling them out at a controlled rate. In the lifting process, the sample is ensured to be perpendicular to the liquid level and lifted at a constant speed so as to avoid uneven thickness of the coating, the lifting speed is set to be 0.5-2 mm/s, and the uniform coating of the coating on the particle surface is ensured.
The specific structure of the deposition lifting device in the embodiment of the present invention is well known to those skilled in the art, and the improvement of the present invention mainly focuses on the application of the deposition lifting process to the nanodiamond raw material, so that the nanodiamond abrasive in the conductive hydrophilic coating solution is stirred and kept in suspension to attach the conductive hydrophilic coating.
Initial pulling (pulling after immersion), setting the pulling speed to 1.5 mm/s, ensuring that a uniform film is formed initially. Through the feedback of the viscosity detector, when the solution viscosity is gradually increased, the lifting speed is automatically reduced to 1 mm/s, when the solution is close to the top, the polar solvent is quickly volatilized, the viscosity is continuously increased, the lifting speed is reduced to 0.5 mm/s, and uneven surface of the liquid or over-thick coating is prevented from being formed.
The relation between the pulling speed and the coating thickness is that;
Wherein, For the thickness of the coating layer,In order to influence the factor of the effect,In order to achieve a solution viscosity,In order to achieve the pulling-up speed,The surface tension of the solution is determined experimentally.The ratio is 0.1 to 1, for example, 0.5, 0.8, etc.
After the nano diamond particles are subjected to surface modification, the nano diamond particles can form good combination with the conductive hydrophilic coating, so that the particles have certain conductive performance, and meanwhile, the dispersibility of the nano diamond particles in a water phase system is improved. The coating not only improves the suspension stability of the particles, but also endows the particles with certain conductivity, and can effectively prevent static accumulation in the fine grinding process and avoid particle agglomeration.
The coated nano diamond particles have better dispersibility and sedimentation resistance in the solution. Through the deposition lifting and thermal curing process, the coating on the particle surface is uniform and stable, can maintain a dispersed state for a long time, and is suitable for high-precision semiconductor substrate processing.
S2, adding the nano diamond abrasive into a polar solvent containing a dispersing agent and a pH regulator in a fractional manner to obtain a mixed solution.
The step S2 comprises the following steps:
s2.1, adding a dispersing agent and a pH regulator into part of the polar solvent to obtain a pre-solution. The dispersant was polymaleic anhydride, 5% by weight of the total mass, the pH adjuster was sodium hydroxide, 1.5% by weight, and deionized water was used as the polar solvent.
The performance and ionization state of the dispersant is generally dependent on the pH of the solution. Without adjusting the pH, the dispersant may not fully exert its dispersing ability. Therefore, the dispersant is firstly mixed with the pH regulator and regulated to a proper pH value, so that the dispersant can be ensured to act in the optimal working state. The pH adjuster can help the dispersant dissolve better in the polar solvent while controlling the charge distribution, enabling the dispersant to be fully activated prior to nanoparticle addition, thus providing a better dispersing environment for the nanoparticles.
If the diamond abrasive is added directly to the dispersant solution without pH adjustment, it may result in the dispersant not being fully functional, thereby causing agglomeration of the particles. The dispersing agent and the pH regulator are mixed first to provide a stable dispersing environment for the diamond abrasive to prevent aggregation during the addition.
S2.2, adding the nano diamond abrasive into the pre-solution in batches, and simultaneously, alternately stirring at high and low speeds. 20% of nano diamond abrasive is added each time, then stirring is carried out, the nano diamond abrasive is fully dispersed, then the next batch is added, and the nano diamond abrasive is divided into 5 batches for adding. After each addition, low speed stirring 300 rpm was used, stirring for 10min to ensure initial dispersion of the particles, followed by switching to high speed stirring 5000 rpm, stirring for 15min.
By alternately using low-speed stirring and high-shear stirring, agglomeration can be prevented at an early stage, while dispersion is accelerated at a later stage. The two stirring modes are used alternately each time, so that the best dispersing effect can be ensured. The low-speed stirring is used for gently mixing when the particles are added for the first time, so that the particles are prevented from being rapidly aggregated due to strong stirring, and clusters are prevented from being generated. High shear agitation is used to apply greater shear force to break up particle aggregates after initial dispersion of the particles, allowing the particles to be further dispersed and stably suspended in solution, temperature monitoring during agitation, and placing the sample in an ice water bath or cooling device to maintain the temperature below 30 ℃.
S2.3, adding the rest polar solvent and stirring to obtain a mixed solution.
After the nanoparticles are sufficiently dispersed, the addition of the remaining polar solvent helps to adjust the concentration and viscosity of the solution so that the overall solution is uniformly distributed. The staged addition of the polar solvent can prevent insufficient aggregation or dispersion of the particles due to excessive one-time polar solvent. The addition of the polar solvent in stages can ensure the stability of the solution, prevent the problem of overhigh local concentration in the dispersion process, and simultaneously maintain the uniformity and the fluidity of the solution.
S3, adding a suspending agent into the mixed solution, and performing ultrasonic dispersion to obtain a pretreatment solution.
The step S3 comprises the following steps:
S3.1, transferring the mixed solution into an ice bath container and transferring into ultrasonic equipment for ultrasonic dispersion. The ultrasonic frequency was 40 kHz, the ultrasonic power was 300W, and the ultrasonic time was 20min.
The specific structures of the ice bath container and the ultrasonic device in the embodiment of the invention are well known to those skilled in the art, and the improvement point of the invention mainly focuses on the application of ultrasonic dispersion to the nano diamond raw material, and the mixed solution is placed in the ice bath and transferred into the ultrasonic device for ultrasonic dispersion, so as to mainly prevent the temperature rise of the solution caused by heat generated by mechanical vibration and ultrasonic action in the ultrasonic process. High temperatures may reduce the dispersion effect and may even lead to failure of the dispersant or other ingredients in the solution. The ice bath can stably control the temperature of the solution, keep the temperature within a proper range (not more than 30 ℃) and ensure the uniform dispersion of the nano particles in a low-temperature environment.
Ultrasonic dispersion can generate strong local shearing force through cavitation effect, break up aggregates among nano diamond particles, and enable the particles to be redispersed in solution. Compared with mechanical stirring, the ultrasonic dispersion can more thoroughly break up fine agglomerates, ensure uniform particle dispersion and improve the stability and dispersion effect of the pretreatment liquid. In addition, the ultrasonic dispersion can enable the surfaces of the nano particles to be fully contacted with the dispersing agent in the solution, so that a stable particle suspension state is formed, and sedimentation or re-agglomeration of the particles is reduced.
And S3.2, filtering the mixed solution after the ultrasonic dispersion is completed.
After ultrasonic dispersion, the filtering step can effectively remove incompletely dispersed aggregates, large particles or other impurities, and ensure that particles in the mixed solution are uniform and the particle size meets the requirements. The large particles are removed through filtration, so that the stability of the solution can be improved, uneven grinding or surface defects in subsequent processing are prevented, and the purity and the processing effect of the pretreatment liquid are improved.
S3.3, adding a suspending agent into the mixed solution after the filtration is completed, and performing ultrasonic dispersion again to obtain a pretreatment solution. The suspending agent is hydroxyethyl cellulose, accounting for 3 percent of the total amount.
After filtration, the suspending agent is added, so that the viscosity and rheological property of the pretreatment liquid can be effectively improved, the particles are prevented from settling in the storage or use process, and the particles are ensured to keep a uniform suspension state in the solution for a long time. The addition of the suspending agent can prevent the agglomeration of the nano diamond particles in the subsequent application and improve the long-term stability of the pretreatment liquid. And the suspending agent and the solution are fully mixed by ultrasonic dispersion again, so that the suspending agent is ensured to be uniformly distributed in the whole solution, and the dispersion uniformity and suspension stability of particles are further improved.
Example 2:
referring to fig. 2, in embodiment 1 of the present invention, a preparation method is provided for preparing a pretreatment liquid applied to a semiconductor substrate, the preparation method includes the steps of:
S1, preprocessing the nano diamond raw material to obtain the nano diamond abrasive.
The step S1 comprises the following steps:
S1.1, placing the nano diamond raw material into a plasma cavity, vacuumizing, introducing oxygen, and starting a plasma excitation source to perform activation treatment. Wherein the oxygen flow is 50sccm, the radio frequency power is set to be 200W, the activation treatment time is 20min, and the particle size of the nano diamond raw material is 300 nm.
S1.2, transferring the nano diamond raw material after the activation treatment into an acid washing solution, and then washing, filtering and drying the nano diamond raw material in sequence to obtain the surface modified nano diamond particles. The pickling solution is a mixed solution of hydrochloric acid and hydrogen peroxide in a ratio of 1:1, and the pickling solution is soaked for 10min.
S1.3, transferring the surface modified nano diamond particles into a conductive hydrophilic coating solution, heating and stirring, then carrying out a deposition lifting process, and drying and thermally curing to obtain the nano diamond abrasive with the conductive hydrophilic coating. The conductive hydrophilic coating solution may be 3% polyethylene glycol modified polyaniline, stirred and heated to 60 ℃ for 1 hour.
S1.4, transferring the nano diamond abrasive with the conductive hydrophilic coating into a couplant solution, and sequentially stirring, filtering and drying. The coupling agent may be a silane-based coupling agent such as gamma-aminopropyl triethoxysilane, gamma-methacryloxypropyl trimethoxysilane or gamma-glycidoxypropyl trimethoxysilane.
The couplant can effectively enhance the adhesive force between the particles and the subsequent coating by forming a layer of chemical bonding layer on the surfaces of the nano diamond particles. This helps to ensure stable bonding between the antistatic hydrophilic coating and the conductive hydrophilic coating, preventing the coating from falling off or delamination.
The use of the couplant can reduce the surface energy of the particles, further improve the dispersibility of the particles in the liquid and prevent agglomeration. The couplant can also form a bridge between the particles and the subsequent antistatic coating, so that the hydrophilicity and chemical compatibility of the surfaces of the nano particles are improved.
S1.5, transferring the dried nano diamond abrasive to electrostatic electret equipment, carrying out an electrostatic electret process, and slowly reducing the pressure and the temperature after the electret is finished to obtain the nano diamond abrasive with charges on the surface. The electric field strength is 15 kV/cm, the residence time is 30min, the ambient relative humidity is 30%, and the residence temperature is 25 ℃.
The electrostatic electret process is capable of maintaining a persistent electrostatic charge on the surface of the nanodiamond particles. These charges can create a stable repulsive charge force between the particles, thereby avoiding the mutual attraction and agglomeration of the particles in the pretreatment liquid. Particularly, in long-term use, the electrostatic repulsive force given by the electret process can keep good dispersibility of particles and prevent the particles from settling or agglomerating. The electrostatic repulsive force brought by the electret process can also obviously improve the suspension stability of particles in the pretreatment liquid. Through electrostatic repulsion, particles can be uniformly dispersed for a long time, and are not easy to settle, so that the long-term service life and stability of the pretreatment liquid are ensured.
In the high-speed rotation or friction process, the nano particles in the pretreatment liquid are easy to generate static electricity accumulation due to friction electricity generation. The surface of the particles subjected to the electret treatment has lasting charges, and the charges can play a role in static electricity dissipation in the processing process, so that static electricity accumulation is prevented from interfering with the grinding effect, and the accuracy and stability of the whole processing are improved.
S1.6, transferring the nano diamond abrasive with charges on the surface into an antistatic hydrophilic coating solution, heating and stirring, then carrying out a deposition lifting process, and thermally curing to obtain the nano diamond abrasive with the surface layer. The antistatic hydrophilic coating solution was 5% of polysulphobetaine.
The primary function of the antistatic hydrophilic coating is to dissipate static electricity and prevent static electricity from accumulating. After the antistatic coating is coated, the nano diamond particles not only have stable electret charge, but also can prevent static accumulation in the external environment. This is particularly important in high load, high friction processing environments where the antistatic coating can protect the particles from external static electricity, maintaining the stability of the grinding process.
Although the charge from the electrostatic electret process helps to disperse the particles, too much charge may also cause too strong adsorption of the particles to other components in the grinding fluid. The antistatic coating can prevent the adsorption effect of particles caused by excessive charges by properly dissipating excessive static charges, and ensure the stable performance of the pretreatment liquid.
The antistatic coating can further enhance the compatibility of the particles with the aqueous polar solvent by improving the hydrophilicity of the particles, so that the pretreatment liquid can maintain good fluidity and stability in long-time use. This feature can reduce particle deposition and flowability loss in high precision processing, and improve the finish of the processed surface.
Through double-layer protection of the conductive hydrophilic coating and the antistatic hydrophilic coating and electrostatic repulsive force given by an electrostatic electret process, the nano diamond abrasive can be stably dispersed in the pretreatment liquid for a long time, agglomeration or sedimentation is avoided, and the service life and performance of the pretreatment liquid are improved.
The antistatic hydrophilic coating is arranged on the outer layer, so that the particle adsorption problem caused by static electricity can be reduced to the greatest extent. The outer coating is directly contacted with the outside, so that charges can be rapidly dissipated, pollution caused by surface static electricity is reduced, and the quality of surface treatment in the process is improved. Meanwhile, with the long-time use of the nano diamond abrasive, after the anti-static coating part of the outer layer is fallen off or worn, the conductive coating of the inner layer is gradually exposed in the external environment, so that the dispersion degree is continuously improved, and the nano diamond abrasive with the unworn anti-static coating and the nano diamond abrasive with the conductive coating have different charge effects in the fine grinding liquid, and mutually repel each other, and mutually inhibit the occurrence of agglomeration, thereby improving the overall dispersion.
S2, adding the nano diamond abrasive into a polar solvent containing a dispersing agent and a pH regulator in a fractional manner to obtain a mixed solution.
The step S2 comprises the following steps:
S2.1, adding a dispersing agent and a pH regulator into part of the polar solvent to obtain a pre-solution. The dispersant is acrylic acid/2-propenyl sulfonic acid copolymer, accounting for 3% of the total mass, the pH regulator is potassium hydroxide, accounting for 2%, deionized water is used as polar solvent.
S2.2, adding the nano diamond abrasive into the pre-solution in batches, and simultaneously, alternately stirring at high and low speeds. 20% of nano diamond abrasive is added each time, then stirring is carried out, the nano diamond abrasive is fully dispersed, then the next batch is added, and the nano diamond abrasive is divided into 5 batches for adding. After each addition, low speed stirring 300 rpm was used, stirring for 10min to ensure initial dispersion of the particles, followed by switching to high speed stirring 5000 rpm, stirring for 15min.
S2.3, adding the rest polar solvent and stirring to obtain a mixed solution.
S3, adding a suspending agent into the mixed solution, and performing ultrasonic dispersion to obtain a pretreatment solution.
The step S3 comprises the following steps:
S3.1, transferring the mixed solution into an ice bath container and transferring into ultrasonic equipment for ultrasonic dispersion. The ultrasonic frequency was 40 kHz, the ultrasonic power was 300W, and the ultrasonic time was 20min.
And S3.2, filtering the mixed solution after the ultrasonic dispersion is completed.
S3.3, adding a suspending agent into the mixed solution after the filtration is completed, and performing ultrasonic dispersion again to obtain a pretreatment solution. The suspending agent is xanthan gum, accounting for 3% of the total amount.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (6)
1. The pretreatment liquid for the semiconductor substrate is characterized by comprising a nano diamond abrasive, a dispersing agent, a pH regulator, a suspending agent and a polar solvent, wherein the nano diamond abrasive is provided with a surface layer, the surface layer comprises a conductive hydrophilic coating and an antistatic hydrophilic coating arranged on the surface of the conductive hydrophilic coating, the nano diamond abrasive accounts for 0.1-2% by weight percent, the dispersing agent accounts for 1-5% by weight percent, the pH regulator accounts for 0.5-2% by weight percent, the suspending agent accounts for 0.5-3% by weight percent, and the balance is the polar solvent;
the preparation method of the pretreatment liquid comprises the following steps:
s1, preprocessing a nano diamond raw material to obtain a nano diamond abrasive;
The step S1 comprises the following steps:
S1.1, placing a nano diamond raw material into a plasma cavity, vacuumizing, introducing oxygen, and starting a plasma excitation source to perform activation treatment;
S1.2, transferring the nano diamond raw material after the activation treatment to an acid washing solution, and sequentially washing, filtering and drying to obtain surface modified nano diamond particles;
S1.3, transferring the surface modified nano diamond particles into a conductive hydrophilic coating solution, heating and stirring, then carrying out a deposition lifting process, and drying and thermally curing to obtain the nano diamond abrasive with the conductive hydrophilic coating;
S1.4, transferring the nano diamond abrasive with the conductive hydrophilic coating into a couplant solution, and sequentially stirring, filtering and drying;
S1.5, transferring the dried nano diamond abrasive to electrostatic electret equipment, carrying out an electrostatic electret process, and slowly reducing the pressure and the temperature after the electret is finished to obtain the nano diamond abrasive with charges on the surface;
s1.6, transferring the nano diamond abrasive with charges on the surface into an antistatic hydrophilic coating solution, heating and stirring, and then carrying out a deposition lifting process, and obtaining the nano diamond abrasive with the surface layer after heat curing;
s2, adding the nano diamond abrasive into a polar solvent containing a dispersing agent and a pH regulator in batches to obtain a mixed solution;
s3, adding a suspending agent into the mixed solution, and performing ultrasonic dispersion to obtain a pretreatment solution.
2. The pretreatment liquid for semiconductor substrate according to claim 1, wherein the dispersant comprises at least one of polymaleic anhydride, acrylic acid/2-propenyl sulfonic acid copolymer, and polyacrylamide;
the pH regulator comprises at least one of sodium hydroxide, potassium hydroxide, triethanolamine and ammonia water;
The suspending agent comprises at least one of hydroxyethyl cellulose, xanthan gum, carbomer and bentonite;
the polar solvent comprises at least one of deionized water, ethanol, acetone and isopropanol.
3. The pretreatment liquid for semiconductor substrate according to claim 1, wherein in the step S1.1, the oxygen flow is 20-50 sccm;
in the step S1.2, the acid washing solution comprises strong acid and hydrogen peroxide, wherein the strong acid comprises at least one of sulfuric acid, nitric acid and hydrochloric acid, and the volume ratio of the strong acid to the hydrogen peroxide is 1:1-2;
in the step S1.3, the conductive hydrophilic coating solution includes at least one of carboxylated polyvinylpyrrolidone, polyethylene glycol modified polyaniline, and polyethylene glycol modified polypyrrole.
4. The pretreatment liquid for semiconductor substrate according to claim 1, wherein in the step S1.5, the antistatic hydrophilic coating solution comprises at least one of a polysulfonabetaine, a quaternary ammonium salt polymer, a polyethylene glycol modified polyurethane, and a polyethylene glycol modified polystyrene;
In the step S1.6, the electric field intensity is 10-25 kV/cm, the residence time is 10-30 min, the ambient relative humidity is 30-50%, and the residence temperature is 20-25 ℃.
5. The pretreatment liquid for application to a semiconductor substrate according to claim 1, wherein the step S2 comprises:
S2.1, adding a dispersing agent and a pH regulator into a part of polar solvent to obtain a pre-solution;
S2.2, adding the nano diamond abrasive into the pre-solution in batches, and simultaneously, alternately stirring at high and low speed;
S2.3, adding the rest polar solvent and stirring to obtain a mixed solution.
6. The pretreatment liquid for application to a semiconductor substrate according to claim 1, wherein the step S3 comprises:
s3.1, transferring the mixed solution into an ice bath container and transferring into ultrasonic equipment for ultrasonic dispersion;
s3.2, filtering the mixed solution after ultrasonic dispersion is completed;
S3.3, adding a suspending agent into the mixed solution after the filtration is completed, and performing ultrasonic dispersion again to obtain a pretreatment solution.
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| CN101831243A (en) * | 2010-04-30 | 2010-09-15 | 中国计量学院 | High-precision non-water-based nano-diamond grinding fluid and preparation method and application thereof |
| CN112030145A (en) * | 2020-11-05 | 2020-12-04 | 苏州香榭轩表面工程技术咨询有限公司 | A kind of method and application of diamond surface modification |
| CN112592663A (en) * | 2020-12-22 | 2021-04-02 | 郑州磨料磨具磨削研究所有限公司 | Nano-diamond polishing solution for processing SiC substrate and preparation method thereof |
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| DE102017204605A1 (en) * | 2017-03-20 | 2018-09-20 | Robert Bosch Gmbh | Process for electrostatic scattering of an abrasive grain |
| CN110885968B (en) * | 2018-09-07 | 2022-06-21 | 深圳先进技术研究院 | Method for preparing diamond coating and diamond coating and cutting tool prepared therefrom |
| JP2024089973A (en) * | 2022-12-22 | 2024-07-04 | 信越ポリマー株式会社 | Polishing Dispersion |
| CN116042099B (en) * | 2023-02-14 | 2024-04-09 | 大连奥首科技有限公司 | Grinding aid with high wettability, high dispersion, high suspension and easy cleaning, preparation method and application thereof, and grinding fluid containing grinding aid |
| CN118638518A (en) * | 2024-06-25 | 2024-09-13 | 中机半导体材料(深圳)有限公司 | A method for preparing agglomerated diamond polishing liquid for DMP of silicon carbide substrate |
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| CN101831243A (en) * | 2010-04-30 | 2010-09-15 | 中国计量学院 | High-precision non-water-based nano-diamond grinding fluid and preparation method and application thereof |
| CN112030145A (en) * | 2020-11-05 | 2020-12-04 | 苏州香榭轩表面工程技术咨询有限公司 | A kind of method and application of diamond surface modification |
| CN112592663A (en) * | 2020-12-22 | 2021-04-02 | 郑州磨料磨具磨削研究所有限公司 | Nano-diamond polishing solution for processing SiC substrate and preparation method thereof |
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