CN119072122A - One-time programming storage unit and its forming method, one-time programming memory - Google Patents
One-time programming storage unit and its forming method, one-time programming memory Download PDFInfo
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- CN119072122A CN119072122A CN202411047081.0A CN202411047081A CN119072122A CN 119072122 A CN119072122 A CN 119072122A CN 202411047081 A CN202411047081 A CN 202411047081A CN 119072122 A CN119072122 A CN 119072122A
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- fuse
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
- H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
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Abstract
The one-time programming memory unit comprises a cathode end, an anode end, a fuse structure arranged between the cathode end and the anode end, at least one fuse, and protection structures connected with the fuse structure, wherein the protection structures are arranged on two opposite sides of the fuse structure, and the protection structures are adjacent to the cathode end. The reliability of the one-time programmable memory cell is improved.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a one-time programmable memory cell, a method for forming the same, and a one-time programmable memory.
Background
EFuse (electrically programmable fuse ) technology is a one-time programming memory technology that is widely used inside chips, and can be used to record configuration information of the chip, or to repair defective elements that are unavoidable in integrated circuits due to semiconductor processes.
When the chip fails, the eFuse circuit in the chip can repair the defects of the chip, and when the chip runs wrongly, the eFuse circuit can automatically correct the chip, so that the yield of the chip is improved.
However, eFuses also need to have improved reliability performance during actual use.
Disclosure of Invention
The invention provides a one-time programmable memory cell, a forming method thereof and a one-time programmable memory, which are used for improving a fuse structure to protect a circuit and improving the reliability of programming.
In order to solve the technical problems, the technical scheme of the invention provides a one-time programming memory cell, which comprises a cathode end, an anode end, a fuse structure arranged between the cathode end and the anode end, wherein the fuse structure at least comprises a fuse, and protection structures connected with the fuse structure, the protection structures are arranged on two opposite sides of the fuse structure, and the protection structures are adjacent to the cathode end.
Optionally, the protection structure comprises a first protection layer and a second protection layer which are respectively arranged at two sides of the fuse structure, the fuse structure is located between the first protection layer and the second protection layer, the first protection layer comprises a first communication part and a first extension part, the first communication part is connected with the fuse structure and the first extension part, the first extension part extends towards the direction of the cathode end, the second protection layer comprises a second communication part and a second extension part, the second communication part is connected with the fuse structure and the second extension part, the second extension part extends towards the direction of the cathode end, and the first extension part and the second extension part are parallel to the fuse structure.
Optionally, when the fuse structure includes two or more fuses, the two or more fuses are parallel to each other, two or more ends of the two or more fuses are respectively connected with the cathode terminal and the anode terminal, and the protection structure is respectively connected with two fuses outside the fuse structure.
Optionally, the one-time programmable memory unit further comprises a connection structure arranged between two adjacent fuses, wherein the connection structure comprises at least one connection layer, and two ends of the connection layer are respectively connected with the two adjacent fuses.
Optionally, when the connection structure includes two or more connection layers, the two or more connection layers are parallel to each other.
Optionally, the connection structure is disposed between the anode terminal and the protection structure.
Optionally, the material of the connection structure is the same as the material of the fuse structure.
Optionally, the fuse structure further comprises a metal silicide layer positioned on the surface of the fuse structure and the surface of the protection structure.
Optionally, the material of the metal silicide layer includes nickel silicide, cobalt silicide, tungsten silicide or titanium silicide.
Optionally, the material of the fuse structure includes polysilicon.
Optionally, the protection structure is the same material as the fuse structure.
Optionally, the material of the fuse structure is the same as the material of the cathode terminal, and the material of the fuse structure is the same as the material of the anode terminal.
Optionally, the device further comprises a substrate, wherein the cathode terminal, the anode terminal, the fuse structure and the protection structure are positioned on the substrate.
Optionally, the semiconductor device further comprises an isolation layer positioned on the surface of the substrate, wherein the cathode terminal, the anode terminal, the fuse structure and the protection structure are positioned on the isolation layer.
Optionally, the material of the isolation layer includes silicon oxide.
Correspondingly, the technical scheme of the invention also provides a one-time programming memory which comprises a plurality of one-time programming memory cells.
Correspondingly, the technical scheme of the invention also provides a method for forming the one-time programming memory cell, which comprises the steps of providing a substrate, forming a fuse material layer on the substrate, etching the fuse material layer, and forming a cathode end, an anode end and a fuse structure arranged between the cathode end and the anode end on the substrate, wherein the fuse structure at least comprises a fuse and protection structures connected with the fuse structure, the protection structures are arranged on two opposite sides of the fuse structure, and the protection structures are adjacent to the cathode end.
Optionally, the protection structure comprises a first protection layer and a second protection layer which are respectively arranged at two sides of the fuse structure, the fuse structure is located between the first protection layer and the second protection layer, the first protection layer comprises a first communication part and a first extension part, the first communication part is connected with the fuse structure and the first extension part, the first extension part extends towards the direction of the cathode end, the second protection layer comprises a second communication part and a second extension part, the second communication part is connected with the fuse structure and the second extension part, the second extension part extends towards the direction of the cathode end, and the first extension part and the second extension part are parallel to the fuse structure.
Optionally, when the fuse structure includes two or more fuses, the two or more fuses are parallel to each other, two or more ends of the two or more fuses are respectively connected with the cathode terminal and the anode terminal, and the protection structure is respectively connected with two fuses outside the fuse structure.
Optionally, a connecting structure is formed between two adjacent fuses, the connecting structure comprises at least one connecting layer, and two ends of the connecting layer are respectively connected with the two adjacent fuses.
Optionally, when the connection structure includes two or more connection layers, the two or more connection layers are parallel to each other.
Optionally, the connection structure is disposed between the anode terminal and the protection structure.
Optionally, a metal silicide layer is formed on the surfaces of the cathode terminal, the anode terminal, the fuse structure and the protection structure.
Optionally, before forming the fuse material layer on the substrate, forming an isolation layer on the surface of the substrate.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
According to the one-time programming storage unit, the protection structures are arranged on two opposite sides of the fuse structure, and the protection structures are adjacent to the cathode end. On one hand, the protection structure can play an auxiliary heat dissipation role to enlarge the heat dissipation area of the fuse, so that the junction of the fuse structure and the cathode end has higher temperature than other positions, the temperature gradient between the fuse structure and the junction of the fuse structure and the cathode end is reduced, the fuse at the junction of the fuse structure and the cathode end is facilitated to be improved, the intensity of the fusing phenomenon is reduced, and on the other hand, the protection structure can prevent the thermal explosion of the fuse structure so as to prevent the damage of the thermal explosion to surrounding circuits, improve the fuse structure to protect the circuits and improve the programming reliability.
Further, the protection structure comprises a first protection layer and a second protection layer which are respectively arranged on two sides of the fuse structure, and the fuse structure is arranged between the first protection layer and the second protection layer. The protection structure can prevent the thermal explosion of the fuse structure so as to prevent the thermal explosion from damaging surrounding circuits and improve the reliability of programming.
Further, the one-time programmable memory cell further includes a connection structure disposed between two adjacent fuses. The connection structure can play a role in assisting heat dissipation, so that heat of the fuse structure from the middle to the anode end is dispersed, and the temperature of the connection part of the fuse structure and the cathode end is increased, so that fusing can be more easily generated.
Furthermore, the fuse structure at least comprises two or more fuses, the two or more fuses can play a role in shunting, so that the fusing phenomenon is not too severe, the possibility of thermal explosion is reduced as much as possible, the two or more fuses must be fused at the same time to calculate successful programming, and the reliability of programming can be improved by increasing the number of the fuses.
Drawings
FIGS. 1-3 are schematic diagrams illustrating a one-time programmable memory cell according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a one-time programmable memory cell according to another embodiment of the present invention;
FIG. 5 is a schematic diagram of a one-time programmable memory cell according to another embodiment of the present invention.
Detailed Description
As noted in the background, there is a need for improved reliability performance of eFuses during actual use.
In particular, the fuse material of eFuses typically comprises polysilicon, with the polysilicon fuse surface typically formed with a metal silicide. There are two mechanisms for polysilicon fuse trimming, one is an electromigration mechanism, and the other is a bursting mechanism, wherein the electromigration occurs between metal and doped ions on polysilicon. Under the condition of small current, eFuses mainly act as an electromigration mechanism, silicide on eFuse fuses migrates from a cathode to an anode because the resistance of polysilicon is far greater than that of metal, the resistance of the fuses gradually increases, finally a cavity is formed at a position close to the cathode, when the resistance of the fuses changes by more than one order of magnitude, the eFuses are defined to be in a blown state at the moment, and the eFuses after the blowing are generally unrecoverable.
If the current is too large, the heat flowing into the eFuse in a short time is very large, in the electromigration process, the highest temperature of the eFuse device is positioned at the fuse, a higher temperature gradient exists at the junction of the fuse and the electrode, and when the current is too large, the local temperature rise of the fuse is caused to generate a bursting phenomenon. Bursting of thermal effects can contaminate surrounding circuitry and the electromigration of silicide due to the release of energy is not sufficiently complete, resulting in eFuse reliability problems, so thermal bursting is to be avoided.
In order to solve the above problems, the technical scheme of the invention provides a one-time programmable memory cell, a forming method thereof and a one-time programmable memory, wherein protection structures are arranged on two opposite sides of the fuse structure, and the protection structures are adjacent to the cathode terminal. On one hand, the protection structure can play an auxiliary heat dissipation role to enlarge the heat dissipation area of the fuse, so that the junction of the fuse structure and the cathode end has higher temperature than other positions, the temperature gradient between the fuse structure and the junction of the fuse structure and the cathode end is reduced, the fuse at the junction of the fuse structure and the cathode end is facilitated to be improved, the intensity of the fusing phenomenon is reduced, and on the other hand, the protection structure can prevent the thermal explosion of the fuse structure so as to prevent the damage of the thermal explosion to surrounding circuits, improve the fuse structure to protect the circuits and improve the programming reliability.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 to 3 are schematic diagrams illustrating a configuration of a one-time programmable memory cell according to an embodiment of the invention.
Referring to fig. 1 to 3, fig. 1 is a top view of fig. 2 and 3, fig. 2 is a schematic view of a cross-sectional structure along a section line AA1 in fig. 1, fig. 3 is a schematic view of a cross-sectional structure along a section line BB1 in fig. 1, the one-time programmable memory cell includes a cathode terminal 102, an anode terminal 103, a fuse structure disposed between the cathode terminal 102 and the anode terminal 103, the fuse structure including at least one fuse 104, and protection structures connected to the fuse structure, the protection structures being disposed on opposite sides of the fuse structure, the protection structures being adjacent to the cathode terminal 102.
The one-time programmable memory cell is provided with a protection structure on opposite sides of the fuse structure, the protection structure being adjacent to the cathode terminal 102. On one hand, the protection structure can play an auxiliary heat dissipation role to enlarge the heat dissipation area of the fuse wire 104, so that the junction of the fuse wire structure and the cathode end 102 has higher temperature than other positions, the temperature gradient between the junction of the fuse wire structure and the cathode end 102 is reduced, the fuse wire structure and the cathode end 102 are facilitated to be fused, and the intensity of the fusing phenomenon is reduced.
The fuse structure at least comprises one fuse 104, in this embodiment, the fuse structure comprises two fuses 104, the two fuses 104 are parallel to each other, and two ends of the two fuses 104 are respectively connected with the cathode terminal 102 and the anode terminal 103.
The fuse structure at least comprises two or more fuses, wherein the two or more fuses can play a role in shunting, so that the fusing phenomenon is not too severe, the possibility of thermal explosion is reduced as much as possible, the two or more fuses must be fused at the same time to calculate successful programming, and the reliability of programming can be improved by increasing the number of the fuses.
With continued reference to fig. 1, the protection structure includes a first protection layer 110 and a second protection layer 111 respectively disposed on two sides of the fuse structure, and the fuse structure is located between the first protection layer 110 and the second protection layer 111.
The protection structure comprises a first protection layer 110 and a second protection layer 111 which are respectively arranged at two sides of the fuse structure, and the fuse structure is arranged between the first protection layer 110 and the second protection layer 111, so that the protection structure can block thermal explosion of the fuse structure, damage to surrounding circuits caused by the thermal explosion is prevented, and the reliability of programming is improved.
In this embodiment, the first protective layer 110 and the second protective layer 111 are respectively connected to one of the fuses 104.
In this embodiment, the first protection layer 110 includes a first communication portion 105 and a first extension portion 106, where the first communication portion 105 connects the fuse structure and the first extension portion 106, and the first extension portion 106 extends toward the cathode end 102.
In this embodiment, the second protection layer 111 includes a second communication portion 107 and a second extension portion 108, the second communication portion 107 connects the fuse structure and the second extension portion 108, and the second extension portion 108 extends toward the cathode end 102.
In this embodiment, the first extension 106 and the second extension 108 are parallel to the fuse structure.
In this embodiment, the first communicating portion 105 is perpendicular to the first extending portion 106, and the second communicating portion 107 is perpendicular to the second extending portion 108. The first communicating portion 105 and the second communicating portion 107 are located on a straight line.
In other embodiments, the first communicating portion may not be perpendicular to the first extending portion, and the second communicating portion may not be perpendicular to the second extending portion.
In other embodiments, the first and second extensions can be non-parallel to the fuse structure, the first and second extensions not being in contact with the fuse structure.
In this embodiment, the first extension 106 and the second extension 108 have a spacing from the cathode end 102. I.e., the first extension 106 and the second extension 108 are electrically isolated from the cathode end 102.
With continued reference to fig. 1, the one-time programmable memory cell further includes a connection structure disposed between two adjacent fuses 104, the connection structure includes at least one connection layer 109, and two ends of the connection layer 109 are respectively connected to two adjacent fuses 104.
In the present embodiment, the connection structure is disposed between the anode terminal 103 and the protection structure. I.e. the protection structure is close to the cathode terminal 102 and the connection structure is close to the anode terminal 103.
In this embodiment, the first communicating portion 105 and the second communicating portion 107 are located on a straight line, one connecting layer 109 is disposed between the first communicating portion 105 and the second communicating portion 107, and the connecting layer 109, the first communicating portion 105, and the second communicating portion 107 are located on a straight line.
The connection structure may serve as an auxiliary heat dissipation function, so that heat of the fuse structure from the middle to the anode terminal 103 is dispersed, and the temperature at the connection of the fuse structure and the cathode terminal 102 is increased, so that fusing may be more easily generated.
In this embodiment, the connection structure illustrates two connection layers 109. In other embodiments, the connection structure comprises one connection layer or more than two connection layers.
In this embodiment, when the connection structure includes two or more connection layers 109, the two or more connection layers 109 are parallel to each other.
In other embodiments, two or more of the tie layers may not be parallel to each other.
In other embodiments, the fuse structure can exclude the connection structure, for example, when the fuse structure includes one fuse or more than two fuses.
In this embodiment, the material of the connection structure is the same as the material of the fuse structure.
In this embodiment, the material of the connection structure and the material of the fuse structure include polysilicon.
In other embodiments, the material of the connection structure and the material of the fuse structure can be different.
In this embodiment, the protection structure is the same material as the fuse structure.
In this embodiment, the material of the protection structure and the fuse structure includes polysilicon.
In other embodiments, the material of the protective structure and the fuse structure can be different.
In this embodiment, the fuse structure is made of the same material as the cathode terminal 102, and the fuse structure is made of the same material as the anode terminal 103.
In this embodiment, the materials of the fuse structure, the cathode terminal 102 and the anode terminal 103 include polysilicon.
In other embodiments, the materials of the fuse structure, the cathode terminal, and the anode terminal can be different.
With continued reference to fig. 1-3, the one-time programmable memory cell further includes a metal silicide layer 120 on the fuse structure surface and the protection structure surface.
In this embodiment, the metal silicide layer 120 is further located on the surface of the connection structure, and the metal silicide layer 120 is further located on the surfaces of the cathode terminal 102 and the anode terminal 103.
The material of the metal silicide layer 120 includes nickel silicide, cobalt silicide, tungsten silicide, titanium silicide, or the like.
The metal silicide layer 120 can reduce resistivity.
In this embodiment, after the voltages are applied to the cathode terminal 102 and the anode terminal 103, the metal silicide layer 120 on the fuse structure migrates from the cathode terminal 102 to the anode terminal 103, and eventually forms a void near the cathode terminal 102, so that the fuse is blown.
With continued reference to fig. 1-3, the one-time programming memory cell further includes a substrate 100, the cathode terminal 102, the anode terminal 103, the fuse structure and the protection structure being located on the substrate 100, and an isolation layer 101 located on a surface of the substrate 100, the cathode terminal 102, the anode terminal 103, the fuse structure and the protection structure being located on the isolation layer 101.
In this embodiment, the material of the isolation layer 101 includes silicon oxide.
In this embodiment, the one-time programming memory cell further includes a first electrical connection plate (not shown) on the surface of the cathode terminal 102 and a second electrical connection plate (not shown) on the surface of the anode terminal 103. The first and second electrical connection plates are for connection to an external power source to provide voltages to the cathode and anode terminals 102, 103.
Correspondingly, the embodiment of the invention also provides a one-time programming memory, which comprises:
A number of one-time programmable memory cells as described in figures 1-3.
In this embodiment, a plurality of the one-time programmable memory cells as described in fig. 1 to 3 are distributed in an array.
Accordingly, the embodiment of the present invention further provides a method for forming the one-time programmable memory cell as shown in fig. 1 to 3, where the method for forming the one-time programmable memory cell includes:
Providing a substrate 100;
Forming a fuse material layer (not shown) on the substrate 100;
The fuse material layer is etched, a cathode terminal 102, an anode terminal 103, and a fuse structure disposed between the cathode terminal 102 and the anode terminal 103 are formed on the substrate 100, the fuse structure at least comprises a fuse 104, and a protection structure connected with the fuse structure, the protection structure is disposed on two opposite sides of the fuse structure, and the protection structure is adjacent to the cathode terminal 102.
In this embodiment, the protection structure includes a first protection layer 110 and a second protection layer 111 respectively disposed on two sides of the fuse structure, where the fuse structure is located between the first protection layer 110 and the second protection layer 111, the first protection layer 110 includes a first communication portion 105 and a first extension portion 106, the first communication portion 105 connects the fuse structure and the first extension portion 106, the first extension portion 106 extends toward the cathode end 102, the second protection layer 111 includes a second communication portion 107 and a second extension portion 108, the second communication portion 107 connects the fuse structure and the second extension portion 108, the second extension portion 108 extends toward the cathode end 102, and the first extension portion 106 and the second extension portion 108 are parallel to the fuse structure.
In this embodiment, the fuse structure includes two fuses 104, two fuses 104 are parallel to each other, and two ends of the two fuses 104 are connected to the cathode terminal 102 and the anode terminal 103, respectively.
In this embodiment, the method further includes forming a connection structure disposed between two adjacent fuses 104, where the connection structure includes at least one connection layer 109, and two ends of the connection layer 109 are respectively connected to two adjacent fuses 104.
In this embodiment, when the connection structure includes two or more connection layers 109, the two or more connection layers 109 are parallel to each other.
In this embodiment, the connection structure is disposed between the anode terminal and the protection structure.
In this embodiment, the method further comprises forming a metal silicide layer 120 on the cathode terminal 102, the anode terminal 103, the fuse structure, the connection structure surface and the protection structure surface.
The method for forming the metal silicide layer 120 comprises forming a metal material layer on the cathode terminal 102 surface, the anode terminal 103 surface, the first protective layer 110 surface, the second protective layer 111 surface, the fuse 104 surface and the connection layer 109 surface, and annealing the metal material layer to form the metal silicide layer 120 on the cathode terminal 102 surface, the anode terminal 103 surface, the first protective layer 110 surface, the second protective layer 111 surface, the fuse 104 surface and the connection layer 109 surface.
In this embodiment, before forming the fuse material layer on the substrate 100, the method further includes forming an isolation layer 101 on the surface of the substrate 100.
In this embodiment, the material of the connection structure is the same as that of the fuse structure, the material of the protection structure is the same as that of the fuse structure, and the material of the fuse structure, the cathode terminal 102 and the anode terminal 103 are the same. The cathode terminal 102, the anode terminal 103, the fuse structure, the protection structure, and the connection structure can be simultaneously formed by one process of etching the fuse material layer.
In the present embodiment, the process of etching the fuse material layer includes a dry etching process.
FIG. 4 is a schematic diagram of a one-time programmable memory cell according to another embodiment of the present invention.
Referring to fig. 4, the one-time programmable memory cell in fig. 4 is different from the one-time programmable memory cell in fig. 1 to 3 in that, in the present embodiment, the fuse structure includes a fuse 204, and the first protection layer 110 and the second protection layer 111 are respectively connected to two sides of the fuse 204.
FIG. 5 is a schematic diagram of a one-time programmable memory cell according to another embodiment of the present invention.
Referring to fig. 5, the one-time programmable memory cell in fig. 5 is different from the one-time programmable memory cell in fig. 1 to 3 in that, in the present embodiment, the fuse structure includes more than two fuses 304, the more than two fuses 304 are parallel to each other, and two ends of the more than two fuses 304 are respectively connected to the cathode terminal 102 and the anode terminal 103.
In this embodiment, the fuse structure illustrates 3 fuses 304. The first protective layer 110 and the second protective layer 111 are respectively connected to two fuses 304 located at two outer sides of the fuse structure.
In this embodiment, the connection structure includes at least one connection layer 309, and two ends of the connection layer 309 are respectively connected to two adjacent fuses 304.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (24)
1. A one-time programmable memory cell, comprising:
A cathode terminal;
an anode end;
the fuse structure is arranged between the cathode end and the anode end and at least comprises a fuse;
and the protection structure is connected with the fuse structure, is arranged on two opposite sides of the fuse structure, and is adjacent to the cathode end.
2. The one-time programmable memory cell of claim 1, wherein the protection structure comprises a first protection layer and a second protection layer disposed on both sides of the fuse structure, respectively, the fuse structure is disposed between the first protection layer and the second protection layer, the first protection layer comprises a first communication portion and a first extension portion, the first communication portion connects the fuse structure and the first extension portion, the first extension portion extends toward the direction of the cathode terminal, the second protection layer comprises a second communication portion and a second extension portion, the second communication portion connects the fuse structure and the second extension portion, the second extension portion extends toward the direction of the cathode terminal, and the first extension portion and the second extension portion are parallel to the fuse structure.
3. The one-time programmable memory cell of claim 1, wherein when the fuse structure comprises two or more fuses, the two or more fuses are parallel to each other, two or more fuse ends are connected to the cathode terminal and the anode terminal, respectively, and the protection structure is connected to two fuses outside the fuse structure, respectively.
4. The one-time programmable memory cell of claim 3, further comprising a connection structure disposed between two adjacent ones of said fuses, said connection structure comprising at least one connection layer, both ends of said connection layer being respectively connected to two adjacent ones of said fuses.
5. The one-time programmable memory cell of claim 4, wherein when the connection structure comprises two or more connection layers, the two or more connection layers are parallel to each other.
6. The one-time programmable memory cell of claim 4, wherein the connection structure is disposed between the anode terminal and the protection structure.
7. The one-time programmable memory cell of claim 4, wherein a material of the connection structure is the same as a material of the fuse structure.
8. The one-time programmable memory cell of claim 1 further comprising a metal silicide layer on a surface of said fuse structure and a surface of said protection structure.
9. The one-time programmable memory cell of claim 8, wherein the material of the metal silicide layer comprises nickel silicide, cobalt silicide, tungsten silicide, or titanium silicide.
10. The one-time programmable memory cell of claim 1, wherein the material of the fuse structure comprises polysilicon.
11. The one-time programmable memory cell of claim 1, wherein the protection structure is the same material as the fuse structure.
12. The one-time programmable memory cell of claim 1, wherein the fuse structure is of a material that is the same as the material of the cathode terminal and the fuse structure is of a material that is the same as the material of the anode terminal.
13. The one-time programmable memory cell of claim 1, further comprising a substrate, said cathode terminal, said anode terminal, said fuse structure, and said protection structure being located on said substrate.
14. The one-time programmable memory cell of claim 13, further comprising an isolation layer on a surface of the substrate, the cathode terminal, the anode terminal, the fuse structure, and the protection structure being on the isolation layer.
15. The one-time programmable memory cell of claim 14, wherein the material of the isolation layer comprises silicon oxide.
16. A one-time programmable memory, comprising:
a number of one-time programmable memory cells as claimed in any one of claims 1 to 15.
17. A method of forming a one-time programmable memory cell, comprising:
Providing a substrate;
forming a fuse material layer on a substrate;
And etching the fuse material layer to form a cathode end, an anode end and a fuse structure arranged between the cathode end and the anode end on the substrate, wherein the fuse structure at least comprises a fuse and protection structures connected with the fuse structure, the protection structures are arranged on two opposite sides of the fuse structure, and the protection structures are adjacent to the cathode end.
18. The method of claim 17, wherein the protection structure includes a first protection layer and a second protection layer disposed on both sides of the fuse structure, respectively, the fuse structure is disposed between the first protection layer and the second protection layer, the first protection layer includes a first connection portion and a first extension portion, the first connection portion connects the fuse structure and the first extension portion, the first extension portion extends toward the direction of the cathode terminal, the second protection layer includes a second connection portion and a second extension portion, the second connection portion connects the fuse structure and the second extension portion, the second extension portion extends toward the direction of the cathode terminal, and the first extension portion and the second extension portion are parallel to the fuse structure.
19. The method of claim 17, wherein when the fuse structure includes two or more fuses, the two or more fuses are parallel to each other, two or more fuse ends are connected to the cathode terminal and the anode terminal, respectively, and the protection structure is connected to two fuses outside the fuse structure, respectively.
20. The method of claim 19, further comprising forming a connection structure between two adjacent fuses, the connection structure including at least one connection layer, both ends of the connection layer being connected to the two adjacent fuses, respectively.
21. The method of claim 20, wherein when the connection structure includes two or more connection layers, the two or more connection layers are parallel to each other.
22. The method of claim 20, wherein the connection structure is disposed between the anode terminal and the protection structure.
23. The method of forming a one-time programmable memory cell of claim 17, further comprising forming a metal silicide layer on surfaces of said cathode terminal, said anode terminal, said fuse structure, and said protection structure.
24. The method of forming a one-time programmable memory cell of claim 17, further comprising forming an isolation layer on a surface of a substrate prior to forming a fuse material layer on the substrate.
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| CN202411047081.0A CN119072122A (en) | 2024-07-31 | 2024-07-31 | One-time programming storage unit and its forming method, one-time programming memory |
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| CN108766952A (en) * | 2018-05-22 | 2018-11-06 | 武汉新芯集成电路制造有限公司 | Electrically programmable fuse structure, integrated circuit and electronic device |
| CN118039599A (en) * | 2022-11-14 | 2024-05-14 | 新加坡商格罗方德半导体私人有限公司 | Electronic fuse with air gap under fuse link |
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2024
- 2024-07-31 CN CN202411047081.0A patent/CN119072122A/en active Pending
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| US20070262413A1 (en) * | 2006-05-11 | 2007-11-15 | Booth Roger A Jr | E-fuse and method for fabricating e-fuses integrating polysilicon resistor masks |
| US20080211059A1 (en) * | 2007-01-17 | 2008-09-04 | Samsung Electronics Co., Ltd. | Electronic fuse having heat spreading structure |
| US20100032798A1 (en) * | 2008-08-11 | 2010-02-11 | Nec Electronics Corporation | Semiconductor device |
| CN108766952A (en) * | 2018-05-22 | 2018-11-06 | 武汉新芯集成电路制造有限公司 | Electrically programmable fuse structure, integrated circuit and electronic device |
| CN118039599A (en) * | 2022-11-14 | 2024-05-14 | 新加坡商格罗方德半导体私人有限公司 | Electronic fuse with air gap under fuse link |
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