CN119092566B - Silicon substrates, solar cells and photovoltaic modules - Google Patents
Silicon substrates, solar cells and photovoltaic modules Download PDFInfo
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Abstract
一种硅基底，包括相对的第一表面和第二表面。第一表面设置有多个凹坑。硅基底的厚度为h1，凹坑的深度为h2，其中h1与h2的差△h满足h1>△h≥1/A(λ=300nm)，其中A(λ=300nm)为硅基底在波长λ=300nm的光吸收系数，单位为cm‑1。本申请还提供一种包括上述硅基底的太阳能电池和光伏组件。通过设置凹坑，并通过凹坑的深度与硅基底的厚度与硅基底在相应波长的光吸收系数建立起联系，提升凹坑对倾斜的入射光的吸收，且满足对特殊波长响应的要求。
A silicon substrate comprises a first surface and a second surface relative to each other. The first surface is provided with a plurality of pits. The thickness of the silicon substrate is h1, and the depth of the pits is h2, wherein the difference △h between h1 and h2 satisfies h1>△h≥1/A (λ=300nm) , wherein A (λ=300nm) is the light absorption coefficient of the silicon substrate at a wavelength of λ=300nm, in units of cm ‑1 . The present application also provides a solar cell and a photovoltaic module comprising the above silicon substrate. By providing pits, and establishing a relationship between the depth of the pits and the thickness of the silicon substrate and the light absorption coefficient of the silicon substrate at the corresponding wavelength, the absorption of the pits to inclined incident light is improved, and the requirements for response to special wavelengths are met.
Description
Technical Field
The application relates to the technical field of photovoltaics, in particular to a silicon substrate, a solar cell comprising the silicon substrate and a photovoltaic module comprising the solar cell.
Background
As a new clean photovoltaic energy source, solar cells have been rapidly developed in recent years, and the application fields of solar cells have been diversified, and besides centralized power stations and distributed power stations, building curtain walls, vehicle-mounted photovoltaic, and aerospace have become fields of photovoltaic application exploration. However, due to the limitation of the incident angle of the light, in some special application scenes, the current crystalline silicon photovoltaic module faces the problem of insufficient power generation capacity, so that the absorption of crystalline silicon cannot meet the photoelectric conversion requirement, namely the power generation capacity cannot meet the differential scene requirement. The existing silicon substrate surface is generally provided with a light trapping structure with a suede structure, so that the absorption of incident light with a small angle can be effectively improved, but the absorption of incident light with a large angle cannot be improved.
Disclosure of Invention
In view of the above, the present application provides a silicon substrate of a solar cell, which has a good absorption effect on incident light with a large angle, thereby improving photoelectric conversion efficiency and realizing a large power generation amount.
In a first aspect, the present application provides a silicon substrate comprising:
the first surface and the second surface being opposite to each other,
The thickness of the silicon substrate is h1, the depth of the pit is h2, the difference Deltah between h1 and h2 meets the requirement that the h 1-Deltah is more than or equal to 1/A (λ=300nm), and A (λ=300nm) is the light absorption coefficient of the silicon substrate at the wavelength of lambda=300 nm, and the unit is cm -1.
According to the application, the pit is arranged on the light receiving surface of the silicon substrate of the solar cell, and the relation between the thickness of the silicon substrate and the difference Deltah of the depth of the pit and the light absorption coefficient of the corresponding wavelength of the silicon substrate is established, so that the pit size can be designed according to different incident light conditions by utilizing the relation, the pit structure is ensured to be in the range of optimal response efficiency for incident light, the absorption of the pit to oblique incident light is improved, the light trapping function of the pit can be better exerted, the absorption of the pit to oblique incident light is improved, and the requirement for special wavelength response is met.
As one possible implementation, when 0.5×h1<1/A (λ=x) < h1, Δh is less than or equal to 0.5×h1, and when 1/A (λ=x) <0.5×h1, Δh satisfies 1/A (λ=x) is less than or equal to Δh and less than or equal to 0.5×h1, wherein A (λ=x) is the light absorption coefficient of the silicon substrate at wavelength x, and x is more than or equal to 900nm.
As a possible implementation, the projection size d of the pit on the first surface is 10-200 μm.
As one possible implementation manner, the pit includes a first pit, and the first pit includes a first side wall, and an included angle between the first side wall and a thickness direction of the silicon substrate is less than or equal to 15 degrees.
As one possible implementation manner, the pit includes a second pit, and the second pit includes a second side wall, and an included angle between the second side wall and the thickness direction of the silicon substrate is greater than 15 degrees and less than or equal to 60 degrees.
As one possible implementation manner, the pit further includes a second pit, where the second pit includes a second sidewall, and an included angle between the second sidewall and a thickness direction of the silicon substrate is greater than 15 degrees and less than or equal to 60 degrees;
the first pit and the projection of the second pit on the first surface do not overlap, and/or,
The first pits and the second pits are arranged and communicated in the thickness direction of the silicon substrate.
As a possible implementation, the silicon substrate has a thickness in the range of 90-180 μm, or,
The thickness of the silicon substrate ranges from 110 to 180 μm.
As a possible implementation, the ratio of the sum of the projected areas of the plurality of pits on the first surface to the area of the first surface is 30% -80%.
As a possible implementation, the spacing between adjacent ones of the pits is 2-200 μm, and/or,
The pits are distributed in an array.
As a possible implementation, the recess comprises a bottom wall and a side wall connecting the bottom wall,
At least part of the side wall is provided with a suede structure, or
At least part of the side walls and at least part of the bottom wall are also provided with a pile structure.
As a possible implementation, the recess has a projection size d on the first surface,
When (when)When the pile structures are arranged at the positions, close to the openings of the pits, of the side walls;
When (when) When the pile structures are arranged at the positions of the side walls close to the openings of the pits or are fully distributed on the side walls;
When (when) When the pile face structure is arranged at the position of the side wall close to the bottom wall or is fully distributed on the side wall;
When (when) When the pile structures are arranged at the positions, close to the openings of the pits, of the side walls and are fully distributed on the bottom wall, or the pile structures are fully distributed on the side walls and the bottom wall;
When (when) When the pile structures are arranged at the positions, close to the bottom wall, of the side walls and are fully distributed on the bottom wall, or the pile structures are fully distributed on the side walls and the bottom wall.
As a possible implementation manner, the pile structure is a pyramid structure, the tower base size of the pile structure is less than or equal to 7 μm, and/or the tower height of the pile structure is less than or equal to 5 μm.
In a second aspect, the application provides a solar cell comprising the silicon substrate of the first aspect.
By arranging the pit structure on the light receiving surface of the silicon substrate of the solar cell, and establishing a connection with the light absorption coefficient of the corresponding wavelength of the silicon substrate through the difference Deltah between the thickness of the silicon substrate and the depth of the pit on the basis, the absorption of the pit on oblique incident light is improved, and the requirement on special wavelength response is met. The pits have good absorption effect for large-angle incident light.
As one possible implementation, the solar cell includes a passivation layer disposed on the first surface, the second surface, and the bottom wall and side walls of the pit, and not filling the pit.
As one possible implementation, the solar cell comprises an electrode;
The electrode comprises multiple collectors arranged in the region between the pits, or
The electrode includes a plurality of bus electrodes and a plurality of collector electrodes, the collector electrodes are disposed in regions between the pits, the bus electrodes are disposed in regions between the pits, or portions of the bus electrodes are disposed in partial regions of the pits, and the other portions are disposed in regions between the pits.
In a third aspect, the present application provides a photovoltaic module comprising the solar cell of the second aspect.
Drawings
Fig. 1 is a schematic view of a silicon substrate according to an embodiment of the present application.
Fig. 2 is a graph of the inverse of absorption coefficient versus different wavelengths for crystalline silicon materials.
Fig. 3 is a graph of the absorbance of two silicon substrates for different wavelengths of light.
Fig. 4 is a schematic view of a first pit and a second pit of a silicon substrate.
Fig. 5 is a schematic diagram of another pit of a silicon substrate.
Fig. 6 is a schematic diagram of a double-sided electrode solar cell.
Fig. 7 is a schematic diagram of a solar cell with a single-sided electrode.
Description of main reference numerals:
The silicon substrate 10, the first surface 11, the second surface 12, the first region 20, the second region 30,
Pit 31, first pit 31A, second pit 31B, first electrode 13, 24, first functional layer 15,
The second functional layer 14, the second electrodes 16, 26, the first collector 131, the second collector 132,
A first passivation layer 21, a functional layer 28, a second passivation layer 22, a bottom wall 32, sidewalls 34, 36.
Detailed Description
In order to reduce reflection of incident light on the surface of the solar cell, increase absorption effect on the incident light and improve photoelectric conversion efficiency, a suede structure with a pyramid structure and an inverted pyramid structure is generally designed on the surface through a suede process, and the suede structure has a better anti-reflection effect on the incident light with smaller vertical incident light or incident angle, so that the probability that the incident light with smaller angle is reflected out of the solar cell can be reduced, but the effect on the incident light with larger incident angle is poor, namely the omnidirectionality of the solar cell is poor. The solar cell with poor omnidirectionality needs to set an optimal light receiving angle or adopts a tracking bracket to realize larger photoelectric conversion efficiency. The optimal light receiving angle is changed according to the geographic position, time and season, and the like, so that the fixed support is difficult to adjust in real time, the solar cell reaches the optimal light receiving angle, and the tracking support is generally high in cost, so that improving the omnidirectionality of the solar cell is a simpler and more convenient way for improving the photoelectric conversion efficiency.
The present application determines an incident light having an incident angle of 45 degrees or more as a large angle incident light and an incident light having an incident angle of less than 45 degrees as a small angle incident light. The incident angle is the angle formed by the incident light to the surface of the silicon substrate and the normal line in the thickness direction of the silicon substrate.
The large-angle incident light irradiates on the region of the suede structure, and is emitted to a direction far away from the silicon substrate through primary reflection under the reflection effect of the pyramid and/or inverted pyramid structure in the suede structure, so that the large-angle incident light has a small optical path in the silicon substrate, and the absorption effect of the battery on the large-angle incident light is poor.
The light with the small angle is irradiated on the region of the suede structure, and the light can be reflected for multiple times in the suede structure of the solar cell under the reflection effect of the pyramid and/or inverted pyramid structure in the suede structure, so that the light with the small angle has a larger optical path in the silicon substrate, and the absorption effect of the cell on the light with the small angle is better.
Therefore, the solar cell having only the textured structure has a good absorption effect for light incident at a small angle, but has a poor absorption effect for light incident at a large angle, and therefore, the solar cell has poor omnidirectionality, and when the photovoltaic module including the solar cell is installed in an aircraft, an automobile or a building, the installation position is limited because the solar cell needs to have an optimal light receiving angle, or a tracking bracket needs to be used to realize a large amount of generated electricity, and the cost is high.
The application provides a silicon substrate of a solar cell, which is beneficial to improving the absorption effect of incident light with a large angle.
The application provides a silicon substrate structure for improving absorption of crystalline silicon, which is used for ensuring absorption of light rays vertically irradiating the silicon substrate and simultaneously considering absorption of oblique incident light rays.
As shown in fig. 1, the present application provides a silicon substrate 10 comprising opposing and parallel first and second surfaces 11, 12. In the embodiment of the present application, when the silicon substrate 10 is applied to a solar cell, at least one of the first surface 11 and the second surface 12 is a light receiving surface, i.e. a surface directly irradiated with incident light. Fig. 1 illustrates an example of the light receiving surface of the first surface 11. The first surface 11 is provided with a plurality of recesses 31 recessed with respect to the first surface 11.
The pits 31 are large angle light trapping structures. Thus, when light rays obliquely irradiate the light receiving surface of the silicon substrate 10, the reflection and light trapping effects of the pit 31 structure can be utilized to increase the optical path length, thereby improving the absorption of the obliquely incident light by the silicon substrate 10.
Based on the response absorption of crystalline silicon materials to light rays in a spectrum, the application enhances the reflection of the silicon substrate 10 to oblique incident light and increases the optical path length by arranging the pits on the surface of the silicon substrate 10 and carrying out correlation design on the depth of the pits 31, the thickness of the silicon substrate 10 and the light absorption coefficient of the silicon substrate 10, thereby improving the absorption of the oblique incident light and the response to the spectrum.
As shown in FIG. 1, the thickness of the silicon substrate 10 is h1, the depth of the pit 31 is h2, the difference Deltah=h1-h2 between the thickness h1 of the silicon substrate 10 and the depth h2 of the pit 31 is not less than 1/A (λ=300nm), wherein A is the light absorption coefficient of the silicon substrate at the wavelength lambda, the unit is cm -1, and the silicon substrate 10 has different light absorption coefficients corresponding to different wavelengths. A (λ=300nm) is the light absorption coefficient of the silicon substrate at wavelength λ=300 nm. In addition, the depth h2 of the pit 31 is smaller than the thickness h1 of the silicon substrate 10. As is clear from the above, the depth h2 of the pit 31 satisfies that h 2. Ltoreq.h1-1/A (λ=300nm).
Wherein the thickness h1 of the silicon substrate 10 is the distance between the first surface 11 and the second surface 12, and the depth h2 of the pit 31 is the distance between the highest point and the lowest point of the pit 31 along the thickness direction of the silicon substrate 10.
The absorption coefficient of the silicon substrate 10 can be obtained by performing test fitting on the silicon substrate 10 by using an ellipsometer or an ultraviolet absorber. In the application, the difference between the thickness of the silicon substrate 10 and the depth of the pit 31 is related to the light absorption coefficient of the corresponding wavelength of the silicon substrate 10, and the pit size can be designed according to different incident light conditions by utilizing the established relation, so that the pit 31 structure is ensured to be in the range of optimal response efficiency to the incident light, and the utilization rate of light is increased.
The absorption coefficients of crystalline silicon of different types and different doping concentrations are also different. The wavelength response range of the crystalline silicon cell response is about 600nm-850 nm. The inverse 1/A of the absorption coefficient A of the silicon substrate of crystalline silicon is given in FIG. 2 for different wavelengths. Further, in some embodiments, when 0.5×h1<1/A (λ=x) < h1, the difference Δh between the thickness h1 of the silicon substrate 10 and the depth h2 of the pit 31 satisfies that Δh.ltoreq.0.5×h1. That is, the difference Δh between h1 and h2 is equal to or less than half the thickness h1 of the silicon substrate 10, and the pits can achieve a trapping effect for incident light having a large angle.
When 1/A (λ=x) < 0.5Xh1, the difference Deltah between the thickness h1 of the silicon substrate 10 and the depth h2 of the pit 31 satisfies that Deltah is equal to or greater than 1/A (λ=x) and equal to or less than 0.5 Xh 1. That is, the difference Δh between h1 and h2 is 1/A (λ=x) or more and is equal to or less than half the thickness h1 of the silicon substrate 10. Where a (λ=x) is the light absorption coefficient of the silicon substrate 10 at the wavelength x, for example, x=900 nm, x=1000 nm, x=1100 nm, x=1200 nm, or x=1300 nm, the wavelength x may be the above exemplified value, but is not limited to the above value. Thus, the depth h2 of the pit 31 satisfies 0.5Xh1.ltoreq.h2.ltoreq.h1-1/A (λ=x). That is, the depth h2 of the pit 31 is equal to or greater than half the thickness h1 of the silicon substrate 10 and equal to or less than the thickness h1 of the silicon substrate minus 1/A (λ=x).
By reasonably setting the range of the difference Deltah between h1 and h2, the pit 31 can better perform the light trapping function, thereby improving the light absorption of the silicon substrate 10 and avoiding the existence of the pit 31 from affecting the mechanical strength of the silicon substrate 10. As can be seen from fig. 2, the crystalline silicon material has a wavelength λ=900 nm, and 1/a=2×10 -3 cm=20 μm. The difference Deltah between the thickness h1 of the silicon substrate 10 and the depth h2 of the pit 31 is not less than 20 μm, and for a silicon substrate of a specific thickness h1, the depth h2 of the pit 31 can be determined, and h2 is not more than h1-20 μm.
Assuming that two identical silicon substrates (thickness of 180 μm) were provided, pits of a simple circular hole structure were provided, and other conditions of the two silicon substrates were the same, except that the absorption curves of the two silicon substrates were as shown in fig. 3 when the depths of the pits of the two silicon substrates were set to 170 μm and 80 μm, respectively. It is clear that the depth h2 of the pit needs to satisfy h2.ltoreq.h1-1/A, where h1=180 μm, 1/A=20 μm, i.e. h2.ltoreq.160 μm is better absorbed. Thus, from the test results of fig. 3, it is understood that the absorption of the silicon substrate having a pit depth of 80 μm is indeed significantly higher than that of the silicon substrate having a pit depth of 170 μm in the wavelength range of 600 to 900 nm.
By arranging a plurality of pits 31 on the light receiving surface of the silicon substrate 10 of the solar cell, and establishing a relation between the thickness of the silicon substrate 10 and the depth difference Deltah of the pits 31 and the light absorption coefficient of the corresponding wavelength of the silicon substrate 10, the pit size can be designed according to different incident light conditions by utilizing the relation, the range of the optimum response efficiency of the pit 31 structure to the incident light is ensured, and therefore, the absorption of the pit 31 to the oblique incident light is improved. The micro-scale pits 31 have a certain absorption effect on light incident at a small angle and have a good absorption effect on light incident at a large angle.
In some embodiments, the perpendicular projection size of the pit 31 on the light receiving surface (the first surface 11 or the second surface 12) is 10-200 μm. The vertical projection dimension in the present application refers to the maximum width of the cross section of the pit 31 in the direction parallel to the thickness direction of the silicon substrate. I.e. the size of the pits 31 is in the order of micrometers. By defining the projected dimensions of the pit 31, the pit 31 has an adapted opening size such that light can be incident on the pit 31 without affecting the intensity of the silicon substrate 10 by the pit 31.
Compared with a light trapping structure with a nano-scale vertical projection size of the pit on the light receiving surface, the structure size of the pit 31 is in a micro-scale, so that the situation that the passivation layer cannot be successfully prepared on the inner wall of the light trapping structure can be avoided, and therefore, the uniform passivation layer can be generated on the surface of the solar cell, meanwhile, the specific surface area of the solar cell can be reduced by the pit 31, the recombination rate of unbalanced carriers on the surface of the solar cell can be reduced, the transverse transmission and collection of carriers on the surface of the solar cell can not be influenced, and the photoelectric conversion efficiency of the solar cell can be improved finally.
Fig. 4 and 5 show several shapes of the pits 31 as illustrations. As shown in fig. 4, the pit 31 includes a first pit 31A. The first recess 31A includes a bottom wall 32 and a first side wall 34 connected to the bottom wall 32, wherein the first side wall 34 is connected between the light receiving surface and the bottom wall 32. The first sidewall 34 forms an angle of 15 degrees or less with the thickness direction of the silicon substrate 10. For example, the angle between the sidewall 34 and the thickness direction of the silicon substrate 10 may be any one of 0 degree, 1 degree, 2 degrees, 3 degrees, 4 degrees, 5 degrees, 6 degrees, 7 degrees, 8 degrees, 9 degrees, 10 degrees, 11 degrees, 12 degrees, 13 degrees, 14 degrees, and 15 degrees. The embodiment of the application does not limit the specific value of the included angle. As shown in fig. 1, the first side wall 34 of the pit 31 forms an angle of 0 degrees with the thickness direction of the silicon substrate 10, that is, the first side wall 34 of the first pit 31A is perpendicular to the first surface 11 and the second surface 12. Although not shown, when the first sidewall 34 of the pit 31 forms an angle greater than 0 degrees with the thickness direction of the silicon substrate 10, the pit 31 has a trapezoidal cross section along the thickness direction of the silicon substrate 10. That is, the opening size of the pit 31 is increased or decreased in the thickness direction of the silicon substrate 10 and directed toward the light receiving surface. The first sidewall 34 is advantageous for absorbing incident light having a relatively large incident angle.
In some embodiments, as shown in fig. 4, the pit 31 may further include a second pit 31B. The second recess 31B includes a second sidewall 36, and an angle between the second sidewall 36 and the thickness direction of the silicon substrate 10 is greater than 15 degrees and less than or equal to 60 degrees. For example, the included angle of the two second side walls 36 may be any one of 16 degrees, 18 degrees, 20 degrees, 22 degrees, 24 degrees, 27 degrees, 30 degrees, 35 degrees, 40 degrees, 45 degrees, 50 degrees, 55 degrees, 60 degrees. The embodiment of the application does not limit the specific value of the included angle. The second sidewall 36 facilitates absorption of incident light having a smaller incident angle. When the incident angle of the incident light is smaller, the incident light can be projected on the second side wall 36 and reflected back and forth on the second side wall 36, so that the optical path of the incident light is increased, the absorption degree of the silicon substrate 10 on the incident light is improved, and the requirement of photoelectric conversion is met. The second recess 31B may also have a bottom wall.
In some embodiments, as shown in fig. 4, the projections of the first pits 31A and the second pits 31B on the first surface do not overlap. That is, the first surface 11 or the second surface 12 has two different structures of pits 31 distributed thereon.
In some embodiments, as shown in fig. 5, the first pits 31A and the second pits 31B are arranged and communicate in the thickness direction of the silicon substrate 10 to form pits 31 of a specific structure.
Fig. 4 and 5 show three different configurations of the pit 31. It will be appreciated that the second region 20 may be provided with at least one of the three structured pits 31 described above. The shape of the concave pit 31 is not limited to that shown in fig. 4 and 5, and may be other shapes as long as it can absorb light more.
In the prior art, the absorption of silicon substrates with different thicknesses in the visible spectrum is different, if the thickness of the silicon substrate is too thin, light is not completely absorbed to cause waste, and if the thickness of the silicon substrate is too thick, the cost is increased.
In some embodiments, the thickness of the silicon substrate 10 ranges from 90-180 μm. For example, the thickness of the silicon substrate may be 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm, 170 μm, 180 μm. Further, the thickness of the silicon substrate ranges from 110 to 180 μm.
For incident light with a large incident angle, the plurality of concave pits 31 on the surface of the solar cell can reduce the probability that the incident light with a large angle is reflected out of the solar cell, and the incident light with a large angle is reflected in the concave pits 31 for multiple times, so that a large optical path exists in the solar cell, and the absorption effect of the solar cell on the incident light can be improved. Meanwhile, compared with a nanoscale light trapping structure (a suede structure or a pit with smaller plane size), the structure size of the pit 31 is in a micron scale, so that a uniform passivation layer is easier to generate on the surface of the solar cell, and meanwhile, the recombination rate of unbalanced carriers on the surface of the solar cell is reduced, and the photoelectric conversion efficiency of the solar cell is further improved.
In some embodiments, the spacing between adjacent pits 31 may be 2-200 μm, so that other structures of the solar cell may be provided in the area between adjacent pits 31 to realize the function of the solar cell. In some embodiments, the plurality of pits 31 are distributed in an array on the surface of the silicon substrate.
The shape of the pit 31 is not limited. In some embodiments, the shape of the pits 31 may be any one or more of cylindrical, conical, triangular conical, quadrangular, etc. or irregular shapes, so that incident light may be reflected multiple times in the micro-scale pits 31 when it impinges on the bottom and side walls of the micro-scale pits 31.
In some embodiments, the ratio of the sum of the projected areas of all the pits 31 on the light receiving surface (e.g. the first surface 11) to the area of the light receiving surface may be 30% -80%. Too large a projected area of the concave pits 31 affects the mechanical strength of the battery sheet, so that the battery sheet is easily broken. The projected area of the pit 31 is too small to effectively enhance the absorption of oblique incident light by the silicon substrate 10.
In the embodiment of the application, the projection area ratio of the micro-scale pits 31 on the light receiving surface can be determined according to the specific application scene of the photovoltaic module comprising the solar cell. Specifically, for an application scene where the incident light with a large angle occupies a relatively large amount, the projection size of the pits 31 on the light receiving surface can be increased, or the number of the pits 31 can be increased, so that the ratio of the projection area of the pits 31 on the light receiving surface to the light receiving surface is large, and the absorption effect of the solar cell on the incident light with a large angle can be increased. For application scenes with small occupation of large-angle incident light, the projection size of the pits 31 on the light receiving surface can be reduced, or the number of the pits 31 can be reduced, so that the ratio of the projection area of the pits 31 on the light receiving surface to the surface area of the light receiving surface is small, and the solar cell has a good absorption effect on the incident light.
As shown in fig. 1, the area between the pits 31 on the first surface 11 of the silicon substrate 10 is defined as a first area 20, and the area where the pits 31 are located is defined as a second area 30. That is, the first surface 11 is divided into a first region 20 and a second region 30. The first region 20 may be provided as a pile structure or as a plane. The first region 20 is presented in fig. 1 as being planar. In addition, fig. 6 and 7 each present a pile structure for the first region 20.
In addition to the areas between the pockets 31 (first areas 20) being optionally textured, further, in some embodiments, at least part of the side walls 34 of the pockets 31 are textured, or at least part of the side walls 34 and at least part of the bottom wall 32 of the pockets are textured.
In some embodiments, the projection size of the pit on the first surface is d, the depth h2 of the pit, and the setting position of the pile structure has a certain relation with the ratio of the depth h2 and the projection size d of the pit. In combination with consideration of the mechanical strength of the silicon wafer and the depth of the pit meeting the light trapping effect, the ratio range of the depth h2 to the projection size d of the pit on the first surface is generally set to be 0.1-h 2/d-2. The too small or too large h2/d can influence the incidence probability of light rays with large angles into the pits, and the light trapping effect brought by the pits is reduced. h2/d may be any one of 0.1, 0.3, 0.5, 0.7, 0.9, 1, 1.3, 1.5, 1.7, 1.9, 2.
In the embodiment of the application, the incidence angle range of the large-angle incident light is 45-70 degrees. The setting area of the pile structure comprises the following cases according to the difference of the ratio of h 2/d.
(1) When (when)When the pile structures are arranged at the positions of the side walls close to the openings of the pits. Namely, when the pit depth and the projection size meet the above relation and the suede structure is arranged close to the pit opening, the large-angle incident light can be irradiated on the suede structure of the side wall, the reflection times of the incident light in the pit are increased, the possibility that the incident light is thoroughly absorbed by the pit is improved, and the light utilization rate is improved;
(2) When (when) When the pile structures are arranged at the positions of the side walls close to the openings of the pits or are fully distributed on the side walls. Namely, when the pit depth and the projection size meet the above relation and the suede structure is arranged close to the pit opening position or all the side walls, the large-angle incident light can be irradiated on the suede structure of the side walls, the reflection times of the incident light in the pits are increased, the possibility that the incident light is thoroughly absorbed by the pits is improved, and the light utilization rate is improved;
(3) When (when) When the pile face structure is arranged at the position of the side wall close to the bottom wall or is fully distributed on the side wall. At this time, the incident light of a large angle is more likely to be irradiated to the pit side wall near the bottom wall. Therefore, when the depth and the projection size of the pit meet the above relation, and the pile structures are arranged on the side wall, close to the bottom wall, of the pit or on all the side walls, the large-angle incident light can be irradiated on the pile structures of the side walls, the reflection times of the incident light in the pit are increased, the possibility that the incident light is thoroughly absorbed by the pit is improved, and the light utilization rate is improved;
(4) When (when) When the pile structures are arranged at the positions of the side walls close to the openings of the pits and are fully distributed on the bottom wall, or the pile structures are fully distributed on the side walls and the bottom wall. At this time, the large-angle incident light is more likely to be irradiated to the pit side wall at a position close to the pit opening and the pit bottom wall position. Therefore, when the depth and the projection size of the pit meet the above relation, and the pile structures are arranged on the side wall and the bottom wall of the pit close to the opening or on all the side wall and the bottom wall, the large-angle incident light can be irradiated on the pile structures of the side wall, the reflection times of the incident light in the pit are increased, the possibility that the incident light is thoroughly absorbed by the pit is improved, and the light utilization rate is improved;
(5) When (when) When the pile structure is arranged at the position of the side wall close to the bottom wall and is fully distributed on the bottom wall, or the pile structure is fully distributed on the side wall and the bottom wall. At this time, the large-angle incident light is more likely to be irradiated to the position of the pit side wall near the bottom wall and the bottom wall position of the pit. Therefore, when the depth and the projection size of the pit meet the above relation, and the side wall of the pit is close to the bottom wall and the upper surface of the bottom wall or all the side walls and the bottom wall are provided with the suede structure, the large-angle incident light can be irradiated on the suede structure of the side wall, the reflection times of the incident light in the pit are increased, the possibility that the incident light is thoroughly absorbed by the pit is improved, and the light utilization rate is improved.
When the pile structures are arranged at the positions of the side walls close to the openings of the pits, the occupied area of the pile structures can be equal to one half of the area of the side walls, or less than one half of the area of the side walls, or more than one half of the area of the side walls.
When the pile structures are disposed at positions of the side walls close to the bottom wall, the area occupied by the pile structures may be equal to one half of the area of the side walls, or less than one half of the area of the side walls, or greater than one half of the area of the side walls.
For the pit with the bottom wall and the side wall having no suede structure, after the obliquely incident light enters the pit, part of the incident light may leave the crystalline silicon cell from the opening of the pit 31 after being reflected for several times due to the smooth wall surface. When the wall surface is provided with the suede structure (micro-nano pyramid structure), after the obliquely incident light enters the pit, the reflection times of the incident light in the pit can be increased due to the synergistic effect of the pit and the suede structure, and the possibility that the incident light is completely captured by the pit structure is increased. Therefore, more light energy can be converted into electric energy, and the generated energy/power of the photovoltaic device/component is further improved.
In some embodiments, the pile structures are pyramidal structures, the pile structures have a pile foundation dimension of 7 μm or less, and/or the pile structures have a pile height of 5 μm or less. The tower footing size refers to the length, width or the longest distance in the diagonal length of the tower footing at the bottom surface of the pyramid structure, and the tower height refers to the vertical distance between the tower tip and the bottom surface of the pyramid.
When the first area 20 is configured as a pile structure, the pile structure of the first area 20 and the pile structure in the pit 31 may or may not be the same size.
When the first area 20 is configured as a textured structure, the pyramid-textured structure in the first area 20 has the same crystal orientation as the pyramid-textured structure on the bottom wall of the pit.
The textured pyramids on the first surface, the textured pyramids on the bottom wall of the pit, and the textured pyramids on the side wall have a distinct difference in crystal plane composition. The suede pyramids on the first region 20 and the bottom wall 32 consist of four crystal planes, [1, 1, 1], [ -1, 1, 1], [1, -1, 1], [ -1, -1, 1], respectively. On the side walls 34 of the pit 31, the crystal face structures of the suede pyramid are respectively [1, 1, 1], [ -1, 1, 1], [1, 1, -1], [ -1, 1, -1] (or [1, 1, 1], [1, -1, 1], [1, 1, -1], [1, -1 ]).
The application also provides a solar cell comprising the silicon substrate 10.
The first region 20 may be provided as a suede structure, which is a small angle light trapping structure. The suede structure has a good anti-reflection effect on normal incident light or incident light with a small incident angle, and can reduce the probability that the small-angle incident light is reflected out of the solar cell, so that the absorption effect on the small-angle incident light is improved.
Thus, when light rays obliquely irradiate the light receiving surface of the silicon substrate 10, the reflection and light trapping effects of the suede structure and the pit 31 structure can be utilized to increase the optical path, so that the absorption of the silicon substrate to light is effectively improved.
The first region 20 with the texture surface structure is composed of pyramids and/or inverted pyramids distributed on the light receiving surface, the silicon substrate can be made of monocrystalline silicon pieces, and correspondingly, the texture surface structure is a regular or irregular pyramid and/or inverted pyramid structure made on the surface of the monocrystalline silicon pieces through a texturing process. The silicon substrate 10 may also be made of a polycrystalline silicon wafer, and the textured structure is a regular or irregular pyramid and/or inverted pyramid structure made on the surface of the polycrystalline silicon wafer by a texturing process. The pit 31 may be formed by wet etching or dry etching.
By arranging a plurality of pits 31 on the light receiving surface of the silicon substrate 10 of the solar cell, and establishing a connection with the light absorption coefficient of the corresponding wavelength of the silicon substrate 10 through the difference Deltah between the thickness of the silicon substrate 10 and the depth of the pits 31, the absorption of the pits 31 to oblique incident light is improved, and the requirement on the response of a special wavelength is met. The area between the concave pits 31 can be set to be a suede structure so as to enhance the absorption effect on the small-angle incident light, and the micro-scale concave pits 31 have good absorption effect on the large-angle incident light, so that the solar cell has higher omnidirectionality, and when the photovoltaic module comprising the solar cell is installed in an aircraft, an automobile and a building, the solar cell can have better incident light absorption effect without the need of tracking a bracket through the installation position, thereby improving the photoelectric conversion efficiency of the photovoltaic module and realizing larger generated energy.
The solar cell further includes a passivation layer. The passivation layer is disposed on the bottom wall and the side wall of the first region 20 and the pit 31, and the structure size of the micro pit 31 is larger than that of the nano light trapping structure, so that a uniform passivation layer can be effectively generated on the surface of the solar cell, and the surface passivation of the solar cell is realized. In some embodiments, the passivation layer includes an aluminum oxide layer and an anti-reflective layer. The thickness of the alumina layer is not more than 10nm a. The material of the anti-reflection layer is Si yNx or Si zNxOy, and the thickness is not more than 100 nm.
The solar cell of the present application further comprises an electrode. In some embodiments, the electrode includes a plurality of collector electrodes disposed in a region between the plurality of recesses. In other embodiments, the electrode includes a plurality of collector electrodes disposed in a region between the plurality of dimples and a plurality of bus electrodes disposed in a region between the plurality of dimples or a portion of the bus electrodes disposed in a partial region of the dimples and another portion disposed in a region between the plurality of dimples. In short, the electrodes cannot be all arranged in the micro-scale pits 31, so that filling of the micro-scale pits 31 by the electrodes is reduced, and the light trapping function of the micro-scale pits 31 for reflecting light at a large angle is avoided.
Alternatively, the solar cell in the embodiments of the present application may be a solar cell with double-sided electrodes, such as a tunnel oxide passivation contact cell (TOPCon). Referring to fig. 6, a schematic structural diagram of a double-sided electrode solar cell according to an embodiment of the present application is shown, and as shown in fig. 6, the solar cell includes a silicon substrate 10, a first electrode 13 and a first passivation layer 15 disposed on a first surface 11 of the silicon substrate 10, and a second passivation layer 14 and a second electrode 16 disposed on a second surface 12 of the silicon substrate 10, where the first surface 11 is a light receiving surface, and the first surface 11 is provided with a first region 20 and a second region 30.
Taking TOPCon cells as an example, a first passivation layer 15 is provided on the bottom wall and the side walls of the recess 31 in the first region 20 and the second region 30, a first electrode 13 is located on the side of the first passivation layer 15 remote from the silicon substrate 10, a second passivation layer 14 is provided on the second surface 12 of the silicon substrate 10, and a second electrode 16 is located on the side of the second passivation layer 14 remote from the silicon substrate 10.
Specifically, the silicon substrate 10 may be an n-type silicon substrate prepared from an n-type crystalline silicon wafer, the first passivation layer 15 may be a multi-layer structure, for example, the first passivation layer 15 may include silicon oxide and silicon nitride, which respectively perform the functions of surface passivation and antireflection on one surface of the solar cell, and the second passivation layer 14 may also be a multi-layer structure, for example, the second passivation layer 14 may include silicon oxide, doped polysilicon, aluminum oxide and silicon nitride, so as to implement the functions of surface passivation and antireflection on the other surface of the solar cell.
Further, a first electrode 13 is disposed on the first surface 11 of the silicon substrate 10, and a second electrode 16 is disposed on the second surface 12 of the silicon substrate 10, so as to form a solar cell having a double-sided electrode, specifically, the electrode may be prepared by screen printing, electroplating, or the like, and the electrode material may include conductive materials such as Ag, al, ni, or the like, which are not particularly limited herein.
Alternatively, referring to fig. 6, the first electrode 13 may include a bus electrode, which is not shown in the drawing, and a collector electrode. Wherein the collector electrodes include a first collector electrode 131 and a second collector electrode 132, the first collector electrode 131 may be disposed in the pit 31 of the first region 20 and/or the second region 30, and the second collector electrode 132 may be disposed in the first region 20.
It is understood that in some embodiments, the bus electrode may be omitted, i.e., at least the first surface of the solar cell is of a non-bus electrode design.
Alternatively, the solar cell in the embodiments of the present application may be a solar cell with a single-sided electrode, such as an interdigital back contact cell (IBC).
Referring to fig. 7, a schematic structural diagram of a passivation contact back contact solar cell according to an embodiment of the present application is shown, and as shown in fig. 7, the solar cell includes a silicon substrate 10, a first passivation layer 21 disposed on a first surface 11 of the silicon substrate 10, and a functional layer 28, a second passivation layer 22, a first electrode 24, and a second electrode 26 disposed on a second surface 12 of the silicon substrate 10. The first surface 11 is a light receiving surface, and the first surface 11 is provided with a first area 20 and a second area 30.
In some embodiments, the silicon substrate 10 may be an n-type silicon substrate prepared from an n-type crystalline silicon wafer.
The first passivation layer 21 is disposed on the areas between the pits 31 and the bottom and side walls of the pits 31. The first passivation layer 21 performs passivation and antireflection functions on the first surface. Although not shown, the first passivation layer 21 is disposed on the areas between the pits 31 and the bottom walls and the side walls of the pits 31 of the first surface 11, and the first passivation layer 21 does not fill the pits 31.
Although not shown, the functional layer 28 includes a tunnel oxide layer and a doped polysilicon layer stacked, wherein the doped polysilicon layer is located on a surface of the tunnel oxide layer facing away from the silicon substrate 10. The tunneling oxide layer is silicon oxide and has a thickness of several nanometers.
The second passivation layer 22 is disposed on the surface of the functional layer 28 facing away from the silicon substrate 10 and serves the passivation and anti-reflection functions for the second surface 12. For example, the second passivation layer 22 includes an alumina layer and an anti-reflection layer which are stacked. A first electrode 24 and a second electrode 26 are disposed on the second passivation layer 22.
The first electrode 24 may include a first bus electrode (not shown) and a first collector electrode (not shown), and the second electrode 26 may include a second bus electrode (not shown) and a second collector electrode (not shown). It is understood that the first and/or second bus electrode may be omitted, i.e. at least the first surface of the solar cell is of a bus electrode-free design.
According to the application, the plurality of pits 31 are arranged on the light receiving surface of the silicon substrate of the solar cell, and the relation between the difference Deltah between the thickness of the silicon substrate and the depth of the pits 31 and the light absorption coefficient of the corresponding wavelength of the silicon substrate is established on the basis, so that the pit size can be designed according to different incident light conditions by utilizing the established relation, the range of the optimum response efficiency of the pit 31 structure to the incident light is ensured, the utilization rate of the light is increased, and the absorption of the pits 31 to the oblique incident light is improved. The micro-scale pits 31 have a good absorption effect for large-angle incident light. In addition, a suede structure can be arranged in the area between the pits 31 to enhance the absorption effect on the incident light with a small angle, so that the solar cell has higher omnidirectionality, and when the photovoltaic module comprising the solar cell is installed in an aircraft, an automobile and a building, the solar cell can have better incident light absorption effect without the need of a mounting position and the use of a tracking bracket, thereby improving the photoelectric conversion efficiency of the photovoltaic module and realizing larger generated energy.
The above embodiments are only for illustrating the technical solution of the present application and not for limiting the same, and although the present application has been described in detail with reference to the above preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the technical solution of the present application.
Claims (16)
1. A silicon substrate, comprising:
opposite first and second surfaces;
The thickness of the silicon substrate is h1, the depth of the pit is h2, the difference Deltah between h1 and h2 meets the requirement that the h 1-Deltah is more than or equal to 1/A (λ=300nm), and A (λ=300nm) is the light absorption coefficient of the silicon substrate at the wavelength of lambda=300 nm, and the unit is cm -1.
2. The silicon substrate according to claim 1, wherein Δh is equal to or less than 0.5×h1 when 0.5×h1<1/a (λ=x) < h1;
When 1/A (λ=x) is less than 0.5 Xh 1, deltah satisfies that Deltah is less than or equal to 1/A (λ=x) and less than or equal to 0.5 Xh 1, wherein A (λ=x) is the light absorption coefficient of the silicon substrate at the wavelength x, and x is more than or equal to 900nm.
3. The silicon substrate of claim 1, wherein the pits have a projected dimension d on the first surface of 10-200 μm.
4. The silicon substrate of claim 1, wherein the recess comprises a first recess comprising a first sidewall having an included angle of less than or equal to 15 degrees with respect to a thickness direction of the silicon substrate.
5. The silicon substrate of claim 1 or 4, wherein the pits comprise second pits, the second pits comprise second sidewalls, and an included angle between the second sidewalls and a thickness direction of the silicon substrate is greater than 15 degrees and less than or equal to 60 degrees.
6. The silicon substrate of claim 4, wherein the pits further comprise a second pit comprising a second sidewall, the second sidewall having an included angle with the thickness direction of the silicon substrate of greater than 15 degrees and less than or equal to 60 degrees;
the first pit and the projection of the second pit on the first surface do not overlap, and/or,
The first pits and the second pits are arranged and communicated in the thickness direction of the silicon substrate.
7. The silicon substrate of claim 1, wherein the silicon substrate has a thickness in the range of 90-180 μm, or,
The thickness of the silicon substrate ranges from 110 to 180 μm.
8. The silicon substrate of claim 1, wherein a ratio of a sum of projected areas of the plurality of pits on the first surface to an area of the first surface is 30% -80%.
9. A silicon substrate according to claim 1, wherein the spacing between adjacent ones of the pits is 2-200 μm, and/or,
The pits are distributed in an array.
10. The silicon substrate of claim 1 wherein the recess comprises a bottom wall and a side wall connecting the bottom wall,
At least part of the side wall is provided with a suede structure, or
At least part of the side walls and at least part of the bottom wall are also provided with a pile structure.
11. The silicon substrate of claim 10 wherein the recess has a projected dimension d on the first surface,
When (when)When the pile structures are arranged at the positions, close to the openings of the pits, of the side walls;
When (when) When the pile structures are arranged at the positions of the side walls close to the openings of the pits or are fully distributed on the side walls;
When (when) When the pile face structure is arranged at the position of the side wall close to the bottom wall or is fully distributed on the side wall;
When (when) When the pile structures are arranged at the positions, close to the openings of the pits, of the side walls and are fully distributed on the bottom wall, or the pile structures are fully distributed on the side walls and the bottom wall;
When (when) When the pile structures are arranged at the positions, close to the bottom wall, of the side walls and are fully distributed on the bottom wall, or the pile structures are fully distributed on the side walls and the bottom wall.
12. The silicon substrate according to claim 10, wherein the textured structure is a pyramid structure, the tower base size of the textured structure is 7 μm or less, and/or the tower height of the textured structure is 5 μm or less.
13. A solar cell characterized by comprising the silicon substrate of any one of claims 1 to 12.
14. The solar cell of claim 13, wherein the solar cell comprises a passivation layer disposed on the first surface, the second surface, and the bottom wall and sidewalls of the pocket, and not filling the pocket.
15. The solar cell of claim 13, wherein the solar cell comprises an electrode;
the electrode includes a plurality of collector electrodes disposed in regions between the pits;
Or the electrode comprises a plurality of bus electrodes and a plurality of collecting electrodes, wherein the collecting electrodes are arranged in the area between the pits, the bus electrodes are arranged in the area between the pits, or part of the bus electrodes are arranged in the partial area of the pits, and the other part of the bus electrodes are arranged in the area between the pits.
16. A photovoltaic module comprising the solar cell according to any one of claims 13 to 15.
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| CN105556680A (en) * | 2013-05-22 | 2016-05-04 | 王士原 | Microstructure-enhanced absorption photosensitive device |
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| JP2011523226A (en) * | 2008-06-12 | 2011-08-04 | イサム・リサーチ・デベロツプメント・カンパニー・オブ・ザ・へブルー・ユニバーシテイ・オブ・エルサレム・リミテッド | Solar volume structure |
| CN209947851U (en) * | 2019-06-17 | 2020-01-14 | 欧浦登（顺昌）光学有限公司 | Light-gathering glass plate with micro-nano composite suede, photovoltaic chemical toughened glass and photovoltaic module |
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