CN119121163A - A hollow magnetron sputtering cathode, a magnetron sputtering coating device and a coating method - Google Patents
A hollow magnetron sputtering cathode, a magnetron sputtering coating device and a coating method Download PDFInfo
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- CN119121163A CN119121163A CN202411596459.2A CN202411596459A CN119121163A CN 119121163 A CN119121163 A CN 119121163A CN 202411596459 A CN202411596459 A CN 202411596459A CN 119121163 A CN119121163 A CN 119121163A
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 153
- 238000000576 coating method Methods 0.000 title claims abstract description 131
- 239000011248 coating agent Substances 0.000 title claims abstract description 94
- 238000001816 cooling Methods 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000498 cooling water Substances 0.000 claims description 55
- 230000005404 monopole Effects 0.000 claims description 51
- 238000004544 sputter deposition Methods 0.000 claims description 44
- 238000005477 sputtering target Methods 0.000 claims description 28
- 238000003860 storage Methods 0.000 claims description 22
- 239000013077 target material Substances 0.000 claims description 10
- 239000007888 film coating Substances 0.000 claims description 5
- 238000009501 film coating Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 36
- 239000010408 film Substances 0.000 description 24
- 239000000835 fiber Substances 0.000 description 18
- 229910052759 nickel Inorganic materials 0.000 description 17
- 238000000034 method Methods 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000010949 copper Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 210000002381 plasma Anatomy 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 238000004804 winding Methods 0.000 description 11
- 238000013461 design Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000009730 filament winding Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a hollow magnetron sputtering cathode, a magnetron sputtering coating device and a coating method, wherein the hollow magnetron sputtering cathode comprises a shielding shell, a target cylinder, a magnet unit and a water cooling unit, wherein the target cylinder, the magnet unit and the water cooling unit are arranged in the shielding shell, the shielding shell is of a hollow tubular structure, the target cylinder is of an annular structure with a hollow area in the interior, the annular structure is positioned at one side close to the central axis of the shielding shell, the magnet unit comprises at least three magnet groups, the magnet groups are arrayed between one side, far away from the hollow area, of the target cylinder and the shielding shell, and the water cooling unit is used for nesting the magnet units. According to the hollow magnetron sputtering cathode provided by the invention, through arranging the target cylinder, the magnet unit and the water cooling unit in the shielding shell and designing the structures and the position relations of the parts, uniform coating of the magnetron sputtering cathode on the surfaces of the parts with the multidimensional complex structures is realized, the coating quality of the cathode is optimized, and the coating efficiency of the cathode is improved.
Description
Technical Field
The invention relates to the technical field of magnetron sputtering coating, in particular to a hollow magnetron sputtering cathode, a magnetron sputtering coating device and a coating method.
Background
The magnetron sputtering cathode target technology has been remarkably developed in recent years, and the progress of film material preparation is promoted. With the continued development of electronic devices, optical elements, and energy devices, there is an increasing demand for high quality thin film materials. The magnetron sputtering technology has become one of the mainstream methods in thin film deposition by forming a magnetic field near the target, enhancing the density of plasma, and improving the sputtering efficiency and the adhesion of the plated thin film.
In addition, with the progress of computer simulation technology, the design and optimization of the magnetron sputtering target are greatly improved, so that the distribution of a magnetic field, a plasma field and a temperature field is more uniform, and the stability and the film quality of a deposition process are effectively improved. In the aspect of technical progress, the design of the magnetron sputtering cathode target gradually develops to the direction of specialization and high target utilization rate. In the future, the development of magnetron sputtering targets will continue to spread around the preparation of high-performance films, especially in applications of three-dimensional parts with complex shape and structure and deep grooves or depressions, such as aerospace parts, medical instruments, precision mechanical parts and the like, the design and manufacturing technology of the magnetron sputtering targets will play a key role.
The design of magnetron sputtering cathode targets is mainly divided into planar targets and rotary cylindrical targets (tube targets) according to the application requirements and the equipment requirements.
Among them, the planar cathode target is the most common magnetron target form, and is suitable for industrial large-area deposition. The planar cathode target has the advantages of simple structure, low manufacturing and maintenance cost and the like, and is suitable for uniform film deposition of a large-area substrate. For example, CN208545485U discloses a device for improving magnetic field uniformity of a rectangular planar magnetron sputtering cathode target, which comprises a permanent magnet, a magnetic yoke, a fine tuning device and a supporting component, wherein the permanent magnet is fixed on the magnetic yoke, the supporting component is fixed in a magnetron sputtering chamber, a hole is formed in the supporting component, the fine tuning device passes through the hole in the supporting component to be in contact with the magnetic yoke, and the device overcomes the problems of uneven magnetic field distribution and inconvenient adjustment of the magnetron sputtering cathode target, and has a simple structure and is easy to install.
Cylindrical targets (tube targets) are often designed in a rotating fashion, which rotates about an axis, allowing for higher target utilization. CN113174576a discloses a circular plane magnetic control sputtering target with rotary magnetic poles, which comprises a target base, a magnetic pole rotary system, a magnetic pole and a magnetic pole, wherein the target base is of a hollow cylindrical structure, the magnetic pole rotary system is arranged on the target base and is movably connected with the target base, the magnetic pole rotary system is of a rotatable structure, and the magnetic pole is arranged on the magnetic pole rotary system and is driven to rotate by the magnetic pole rotary system.
However, the planar magnetron sputtering target has the problems of insufficient plasma density, low sputtering efficiency, low target utilization rate and the like, and the saddle effect is easy to occur, so that the target consumption is uneven. Moreover, the defects that the coating of the complex three-dimensional part is difficult to realize are overcome in both the planar cathode target and the cylindrical target, because the traditional cathode target is required to be added with the rotating functions of a component and a magnetron target, the mechanical control precision requirement is high, the structure is complex, and the average deposition rate is low. In addition, the deposited thin film needs to be additionally heated, the three-dimensional part is extremely difficult to rotate and simultaneously heat, the temperature uniformity is difficult to control, and in a word, the existing magnetron cathode target technology is not suitable for coating films of the three-dimensional part and the two-dimensional linear part.
Therefore, how to solve the problems of low sputtering efficiency, poor coating uniformity and difficult realization of uniform and effective coating of two-dimensional or three-dimensional complex parts in the traditional magnetron sputtering targets has become a problem to be solved in the prior art.
Disclosure of Invention
In order to solve the technical problems, the invention aims to provide a hollow magnetron sputtering cathode, a magnetron sputtering coating device and a coating method. According to the hollow magnetron sputtering cathode provided by the invention, through arranging the target cylinder, the magnet unit and the water cooling unit in the shielding shell and designing the structures and the position relations of the unit components, uniform coating of the magnetron sputtering cathode on the two-dimensional linear structural component and the three-dimensional structural component can be realized, and meanwhile, the coating quality of the cathode can be optimized and the coating efficiency of the cathode can be improved.
To achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the invention provides a hollow magnetron sputtering cathode, which comprises a shielding shell, and a target cylinder, a magnet unit and a water cooling unit which are arranged in the shielding shell;
The shielding shell is of a hollow tubular structure;
The target cylinder is of an annular structure with a hollow area inside, and is positioned at one side close to the central axis of the shielding shell;
the magnet unit comprises at least three magnet groups, and the magnet groups are arranged between one side, far away from the hollow area, of the target cylinder and the shielding shell in an array manner;
The water cooling unit is used for nesting the magnet units.
In the present invention, the "central axis of the shielding shell" refers to a line connecting geometric centers of two bottom surfaces of the shielding shell, and can be seen in particular by a dashed line aa' in fig. 2.
According to the hollow magnetron sputtering cathode provided by the invention, through arranging the target cylinder, the magnet unit and the water cooling unit in the shielding shell and designing the structures and the position relations of the unit components, uniform coating of the magnetron sputtering cathode on the two-dimensional linear structural component and the three-dimensional structural component can be realized, and meanwhile, the coating quality of the cathode can be optimized and the coating efficiency of the cathode can be improved.
The hollow magnetron sputtering cathode provided by the invention is provided with a shielding shell with a hollow tubular structure, a magnet unit is arranged between the outer side surface of the target barrel and the inner side surface of the shielding shell, and the magnet unit is further arranged into a magnet group which is arranged in an array, so that a special magnetic field can be formed in the working process of the magnet group in the magnet unit, thereby forming closed magnetic force lines, improving ionization efficiency of plasmas, simultaneously obtaining uniform and high-density plasmas, further improving ionization strength of the plasmas, promoting sputtering uniformity of the target barrel and sputtering efficiency of the target barrel, enabling the sputtering coating material to be uniformly deposited on each surface of a complex structural component, ensuring consistency and uniformity of coating thickness, arranging a water cooling unit around the magnet unit, and enabling the magnet unit to be embedded in the working process of the cathode to be effectively controlled in a long-time manner.
Preferably, the target cylinder comprises a sputtering target material close to one side of the hollow area and a sputtering inner wall far from one side of the hollow area.
The sputtering target in the target cylinder provides a target for the hollow magnetron sputtering cathode, is used as a raw material of a coating film, and the arranged sputtering inner wall has the functions of supporting, heat conduction and electric field provision.
Preferably, the inner sputtering wall is located on the outer side face of the sputtering target, and the inner side face of the inner sputtering wall is tightly attached to the outer side face of the sputtering target.
Preferably, the magnet unit is in contact connection with one side of the sputtering inner wall, which is far away from the sputtering target material.
Preferably, the upper end and the lower end of the sputtering target are respectively provided with a first target fixing part and a second target fixing part, which are used for fixing the sputtering target on the inner side of the shielding shell.
Preferably, the first target fixing part and the second target fixing part are in a coaxial annular structure.
Preferably, the magnet assembly comprises two monopolar magnets of opposite polarity.
The invention adopts the monopole magnets with opposite polarities to form the magnet group, can optimize the polarity distribution condition in the shielding shell, and the magnet group formed by the monopole magnets with opposite polarities can effectively form complete and closed magnetic force lines, thereby ensuring high ionization rate of working gas in the magnetron sputtering process.
Preferably, the two monopole magnets with opposite polarities are sequentially arranged in the radial direction in the magnet group with a direction along the diameter of the bottom surface of the shielding shell as the radial direction.
Preferably, the bottom surface direction of the shielding shell is taken as a horizontal direction, and the magnet groups are radially arranged in the horizontal direction inside the shielding shell.
Preferably, the polarities of the unipolar magnets on the same radial length are alternately arranged at intervals in the horizontal direction.
According to the invention, the magnet groups which are radially arranged are arranged in the horizontal direction, a closed-loop magnetic field is obtained in the horizontal direction, the sputtering of the parts to be coated can be carried out in multiple directions, the sputtering uniformity of the cathode to the parts is improved, and the sectional distribution can be beneficial to enabling magnetic lines of force to be positioned in the cathode and form a closed loop, so that the sputtering efficiency and the sputtering uniformity of the cathode device are improved. In addition, the finer the segmentation of the magnet assembly between the target cylinder and the shield case, the more excellent the uniformity of the coating film will be.
Preferably, the side direction of the shielding shell is taken as a vertical direction, and the magnet units are arranged with at least more than three layers of magnet groups in the vertical direction.
According to the invention, more than three layers of magnet groups are arranged in the vertical direction in the shielding shell, and a continuous and closed magnetic field can be formed in the vertical direction in the shielding shell, so that magnetic lines of force can penetrate through the surface of a coating material and are positioned in the shielding shell, the outward emission of the magnetic field is reduced, the ionization efficiency of working gas is improved, the density of plasma in a unit volume in a hollow area is increased, and finally, the sputtering efficiency of a target on a component is high, and the sputtering uniformity is good.
Preferably, each layer of the magnet groups in the vertical direction is arranged at equal intervals.
Preferably, in the magnet group arranged in the vertical direction, polarities of the monopole magnets on the side close to the target cylinder are alternately arranged at intervals, and polarities of the monopole magnets on the side far from the target cylinder are alternately arranged at intervals.
The invention adopts the arrangement mode of alternately arranged monopole magnets in adjacent layers of monopole magnets, has the function of effectively forming complete and closed magnetic force lines, and ensures high ionization rate in the magnetron sputtering process.
The invention realizes the formation of three-dimensional magnetic lines of force in the inner wall of the hollow magnetron sputtering target through the special design of the positions, the arrangement and the number of the magnet groups in the vertical direction and the horizontal direction, and the design is the key for realizing the two-dimensional and three-dimensional complex layout coating.
Preferably, the polarities of the adjacent monopole magnets are opposite in both the vertical direction and the horizontal direction inside the shield case.
Preferably, the magnetic forces of adjacent monopole magnets are not equal and/or equal in the vertical direction and the horizontal direction inside the shield case.
Preferably, in the vertical direction inside the shielding case, the total number of layers of the magnet groups in which the magnet units are arranged is an odd number.
In the present invention, the "the total number of layers of the magnet assembly is an odd number" means that the total number of layers of the magnet assembly can be selected to be an odd number of layers such as 3, 5, 7, 9, 11, 13, 15 or 17 in the vertical direction.
Preferably, the layers of the magnet assembly having an odd total number of layers are numbered sequentially in order of 1, 2, 3. Among the monopole magnets near the side of the target cylinder, the magnetic force of the odd numbered monopole magnets is greater than the magnetic force of the even numbered monopole magnets.
In the present invention, the "the magnetic force of the odd-numbered monopole magnets is greater than the magnetic force of the even-numbered monopole magnets" means that the number of layers of the magnet assembly is sequentially numbered in the vertical direction from top to bottom or from bottom to top, and the magnetic force of the monopole magnets, which are numbered 1,3, 5, 7, 9, 13, 15, 17, or the like, on the side near the target cylinder is greater than the magnetic force of the monopole magnets, which are numbered 2,4, 6, 8, 10, 12, 14, 16, or the like.
Preferably, in the vertical direction inside the shield case, the layers of the magnet group having an odd total number of layers are sequentially numbered in order of 1,2, 3. The magnetic force of the odd numbered monopole magnets is greater than 40-60%, such as 40%, 42%, 44%, 46%, 48%, 50%, 52%, 54%, 56%, 58%, 60%, etc., of the magnetic force of the even numbered monopole magnets.
The invention can further improve the coating effect of the magnetron sputtering cathode on the two-dimensional linear structural component and the three-dimensional structural component for the design of magnetic force differentiation of different monopole magnets. The invention further regulates the relative magnitudes of the magnetic forces of the monopole magnets distributed close to different layers on one side of the target cylinder in the vertical direction, forms a totally-enclosed unbalanced magnetic field between the surface of the coating material and the inner wall of the target, improves the ionization efficiency of the working gas, improves the plasma density in unit volume, and improves the deposition rate and the deposition uniformity of the film, and further selects the magnetic force of the monopole magnets with even numbers to be smaller than the magnetic force of the monopole magnets with odd numbers to form a magnetic field formed by magnetic lines of force which are gathered towards the middle and vertically sealed on the side surfaces between the magnets of each layer, so as to form an unbalanced magnetic field which is gathered inwards and vertically sealed on the side surfaces, thereby avoiding the outward divergence of the target, improving the utilization rate of the target, and improving the deposition rate and the deposition uniformity of the film.
In the present invention, the design of the magnetic force of the monopole magnet on the side far from the target cylinder in the vertical direction inside the shield case is not particularly limited, and alternatively, the magnetic forces of the two monopole magnets in the same magnet group are the same in the radial direction.
In the present invention, the adjacent monopole magnets in the horizontal direction inside the shield case are not particularly limited either, and alternatively, the adjacent monopole magnets in the same radial length have different magnetic forces.
Preferably, the magnet group includes an S-pole magnet and an N-pole magnet.
Preferably, the magnet groups are disposed at equal angular intervals in the horizontal direction.
Preferably, the structure of the monopole magnet is a cylinder, and the bottom surface of the monopole magnet is parallel to the bottom surface of the shielding shell.
Preferably, the water cooling unit includes a cooling water storage tank, and a cooling water inlet passage and a cooling water outlet passage located at a side of the cooling water storage tank remote from the magnet unit.
Preferably, the cooling water storage tank is of a multi-channel annular nested structure.
Preferably, in the shield case interior, the magnet groups in the radial direction are each located between the respective channels of the cooling water reservoir, and the channels of the cooling water reservoir are provided between the magnet groups in the radial direction.
The cooling water storage tank with the multi-channel annular structure surrounds each magnet group in a nested mode, and can effectively absorb heat generated in the working process of the magnet units by cooling water, so that the magnetic force in the hollow magnetron sputtering cathode is guaranteed not to demagnetize after the hollow magnetron sputtering cathode works for a long time, the service life of a target is prolonged, and the overall performance of the magnetron sputtering cathode is maintained. In addition, the cooling water storage tank is arranged in the hollow magnetron sputtering cathode, so that direct contact between cooling water and the magnet can be avoided, and rust and corrosion of the magnet can be relieved.
Preferably, the end of the channel of the cooling water storage tank, which is close to one side of the target cylinder, is in contact connection with one side of the target cylinder, which is far away from the hollow area.
According to the invention, the end part of the channel of the cooling water storage tank is in contact connection with one side of the target cylinder far away from the hollow area, so that the cooling area of the cooling water storage tank to the magnet group is increased, and the refrigerating effect is better.
Preferably, the cooling water storage tank and the target cylinder surround the periphery of the magnet group.
Preferably, the cooling water inlet passage communicates with a side surface of the shield case and extends to an outside of the shield case.
Preferably, the cooling water outlet passage communicates with a side surface of the shield case and extends to an outside of the shield case.
Preferably, the hollow magnetron sputtering cathode further comprises a power interface.
Preferably, the power interface is fixed to and communicates with a side surface of the shield case and extends to an outside of the shield case.
Preferably, one end of the power interface located inside the shielding shell is in contact connection with one side of the target barrel away from the hollow area.
In a second aspect, the present invention provides a magnetron sputtering coating device, which includes the hollow magnetron sputtering cathode of the first aspect, and the hollow magnetron sputtering cathode has an annular tubular structure with a hollow area inside.
The magnetron sputtering coating device provided by the invention adopts the specific hollow magnetron sputtering cathode with the annular cylindrical structure with the hollow area, and the cathode target has a three-dimensional uniform magnetic field, so that uniform coating on the multi-dimensional complex structural component can be realized, and the sputtering quality and sputtering efficiency of the device on the complex structural component can be improved.
Preferably, the magnetron sputtering coating device further comprises a vacuum chamber, and a wire releasing roller and a wire collecting roller which are positioned in the vacuum chamber.
Preferably, the hollow magnetron sputtering cathode is positioned in the vacuum chamber and is fixed inside the vacuum chamber through a fixed shaft.
Preferably, the fixed shaft for fixing the hollow magnetron sputtering cathode comprises a flange fixed shaft.
Preferably, the hollow magnetron sputtering cathode is positioned between the godet and the godet.
Preferably, the side direction of the shielding shell is taken as a vertical direction, and the wire unwinding roller and the wire winding roller are respectively positioned at the upper end and the lower end of the hollow magnetron sputtering cathode in the vertical direction.
According to the invention, the hollow magnetron sputtering cathode is arranged between the wire unwinding roller and the wire winding roller, the wire unwinding roller and the wire winding roller are adopted to fix the two ends of the part to be coated, so that the part to be coated is placed in the hollow area of the hollow magnetron sputtering cathode, and on the basis that equipment does not rotate, the cathode with an annular cylindrical structure performs surrounding type sputtering coating on the surface of the part to be coated, thereby realizing the effective coating on the surface of the part with a multi-dimensional complex structure by the magnetron sputtering coating device, and simultaneously improving the coating efficiency and adhesive force of the device.
Preferably, the magnetron sputtering coating device further comprises a cathode power supply.
Preferably, the cathode power supply is connected with a power interface in the hollow magnetron sputtering cathode through a fixed shaft.
Preferably, the magnetron sputtering coating device further comprises a servo motor positioned outside the vacuum chamber.
Preferably, the servo motor comprises a first servo motor and a second servo motor, and the first servo motor and the second servo motor are used for driving the godet roller and the godet roller to rotate.
Preferably, the first servo motor is connected with the godet roll and is used for driving the godet roll to rotate.
Preferably, the second servo motor is connected with the filament winding roller and is used for driving the filament winding roller to rotate.
According to the invention, the servo motor is adopted to drive the wire unwinding roller and the wire winding roller to rotate, so that the part to be coated fixed between the wire unwinding roller and the wire winding roller can move, the coating efficiency and the coating uniformity of the device for coating the part with a complex structure can be improved, and continuous coating can be realized.
Preferably, the magnetron sputtering coating device further comprises a vacuum gauge, a pump group and a control valve.
Preferably, the vacuum gauge is fixed on and communicated with the vacuum chamber for measuring the vacuum degree of the vacuum chamber.
Preferably, the pump set comprises a molecular pump and a mechanical pump.
Preferably, the molecular pump is located outside the vacuum chamber and communicates with the inside of the vacuum chamber through a first connection channel.
Preferably, the mechanical pump is located outside the vacuum chamber, wherein one side is connected with the molecular pump through a second connection channel, and the other side is connected with the inside of the vacuum chamber through a third connection channel.
Preferably, the control valve comprises a backing valve, a bypass valve and a restrictor valve.
Preferably, the flow limiting valve is arranged between the vacuum chamber and the molecular pump and is used for adjusting working air pressure in the vacuum chamber.
Preferably, the bypass valve is disposed between the vacuum chamber and the mechanical pump, and is used for vacuumizing the vacuum chamber.
Preferably, the backing valve is disposed between the molecular pump and the mechanical pump for evacuating the vacuum chamber.
In a third aspect, the present invention provides a magnetron sputtering coating method based on the magnetron sputtering coating device of the second aspect, the magnetron sputtering coating method comprising the following steps;
And placing the part to be coated in a hollow area of a hollow magnetron sputtering cathode, coating a film on the surface of the part to be coated by adopting the hollow magnetron sputtering cathode, and obtaining a film on the surface to be coated.
According to the invention, the part to be coated is placed in the hollow area inside the hollow magnetron sputtering cathode for coating, so that the surface of the part to be coated can be subjected to all-round sputtering coating, and the sputtering uniformity of the part to be coated is improved; meanwhile, the hollow magnetron cathode target designed by the invention has a three-dimensional and uniform magnetic field, so that uniform plasmas can be generated, and under the action of an electric field, the plasmas can heat a part to be coated, thereby enhancing the uniformity of coating materials on the surface of the part and the adhesive force of the coating materials on the part.
Preferably, the structure of the part to be coated comprises a two-dimensional linear structure or a three-dimensional structure.
The hollow magnetron sputtering cathode adopted by the magnetron sputtering coating method provided by the invention can be flexibly applied to the sputtering coating process of component materials with various complex configurations by adjusting the position relation between the cathode target and each component, and the specific component design of the cathode can ensure that the cathode can still maintain the coating effect with high efficiency and high quality when processing components with complex structures and abundant details.
Preferably, the part to be coated is fixed in the hollow area of the hollow magnetron sputtering cathode through a wire unwinding roller and a wire winding roller.
Preferably, before the hollow magnetron sputtering cathode is used for coating, the vacuum chamber is also vacuumized.
Preferably, the background vacuum degree of the vacuum chamber after the vacuum pumping is 8×10 -5-8×10-4 Pa, for example 8×10-5Pa、9×10-5Pa、1×10-4Pa、2×10-4Pa、3×10-4Pa、4×10-4Pa、5×10-4Pa、6×10-4Pa、7×10-4Pa Pa or 8×10 -4 Pa, etc.
Preferably, in the film coating process, the godet and the godet synchronously rotate.
Preferably, in the film coating process, cooling water is introduced into the water cooling unit of the hollow magnetron sputtering cathode.
Preferably, the rotation speed of the godet and the godet is 10-15rpm, for example 10rpm, 11rpm, 12rpm, 13rpm, 14rpm or 15rpm, etc.
Preferably, during the coating process, a working gas is also introduced.
In the invention, working gas is introduced in the coating process and used for bombarding the target material to form target atoms.
Preferably, during the coating process, a reaction gas is also introduced.
In the invention, the introduced reaction gas can react with the bombarded target atoms, so as to realize the preparation and deposition of the compound film.
Preferably, the working gas comprises argon.
Preferably, in the film plating process, the flow rate of the working gas is 15-30sccm, for example 15sccm, 18sccm, 21sccm, 24sccm, 27sccm, 30sccm, or the like.
Preferably, the reaction gas comprises nitrogen and/or oxygen.
Preferably, in the coating process, the flow rate of the reaction gas is 5-60sccm, for example, 5sccm, 10sccm, 15sccm, 20sccm, 25sccm, 30sccm, 35sccm, 40sccm, 45sccm, 50sccm, 55sccm, 60sccm, or the like.
Preferably, during the coating process, the working vacuum degree of the vacuum chamber is 0.5-2.0Pa, for example 0.5Pa, 0.8Pa, 1.1Pa, 1.4Pa, 1.7Pa or 2.0Pa, etc.
Preferably, during the coating process, the current of the cathode power supply connected to the hollow magnetron sputtering cathode is 0.5-5.0A, for example, 0.5A, 1.0A, 1.5A, 2.0A, 2.5A, 3.0A, 3.5A, 4.0A, 4.5A or 5.0A, etc.
Preferably, during the coating process, the pulse frequency of the hollow magnetron sputtering cathode is 1000-8000Hz, such as 1000Hz, 2000Hz, 3000Hz, 4000Hz, 5000Hz, 6000Hz, 7000Hz or 8000 Hz.
Preferably, the hollow magnetron sputtering cathode has a duty cycle of 10-90%, such as 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80% or 90% during the coating process.
Compared with the prior art, the invention has at least the following beneficial effects:
(1) According to the hollow magnetron sputtering cathode provided by the invention, through arranging the target cylinder, the magnet unit and the water cooling unit in the shielding shell and designing the structures and the position relations of the unit components, a three-dimensional annular uniform magnetic field can be realized, so that the distribution of three-dimensional uniform plasmas is realized, the surrounding type three-dimensional uniform coating of the magnetron sputtering cathode on the surfaces of the two-dimensional linear structure and the three-dimensional structural component is finally realized, and meanwhile, the coating quality of the cathode can be optimized and the coating efficiency of the cathode can be improved.
(2) The magnetron sputtering coating device provided by the invention adopts the specific hollow magnetron sputtering cathode with the annular cylindrical structure with the hollow area, and the cathode target has a three-dimensional uniform magnetic field, so that uniform coating on the multi-dimensional complex structural component can be realized, and the sputtering quality and sputtering efficiency of the device on the complex structural component can be improved.
(3) According to the invention, the part to be coated is placed in the hollow area inside the hollow magnetron sputtering cathode for coating, so that the all-round sputtering coating of the part to be coated can be performed, the sputtering uniformity of the part to be coated is improved, the uniformity of the coating material in the part coating and the adhesive force of the coating material to the part are enhanced, the ionization intensity of the adopted hollow magnetron sputtering cathode is high, the ionization rate of the target material is high, and the efficiency of the sputtering coating process is high.
Drawings
Fig. 1 is a schematic structural diagram of a magnetron sputtering coating device according to embodiment 1 of the present invention.
Fig. 2 is a schematic front view of a hollow magnetron sputtering cathode according to embodiment 1 of the invention.
Fig. 3 is a schematic top sectional view of a hollow magnetron sputtering cathode provided in embodiment 1 of the invention.
Wherein, 1, a vacuum chamber, 2, a hollow magnetron sputtering cathode, 201, a shielding shell, 202, a target cylinder, 202-1, a sputtering target, 202-2, a sputtering inner wall, 203, a magnet unit, 204, a water cooling unit, 204-1, a cooling water storage tank, 204-2, a cooling water inlet channel, 204-3, a cooling water outlet channel, 205, a target fixing part, 205-1, a first target fixing part, 205-2, a second target fixing part, 206, a power interface, aa', a central axis of the shielding shell, 3, a wire feeding roller, 4, a wire collecting roller, 5, a cathode power supply, 6, a servo motor, 601, a first servo motor, 602, a second servo motor, 7, a molecular pump, 8, a mechanical pump, 9, a flow limiting valve, 10, a bypass valve, 11, a backing valve, 12, a cathode fixing shaft, 13 and a vacuum gauge.
Fig. 4 is a scanning electron microscope image of a copper film deposited on a nickel fiber provided in example 1 of the present invention.
Detailed Description
The technical scheme of the invention is further described below by the specific embodiments with reference to the accompanying drawings. The following examples are merely illustrative of the present invention and are not intended to represent or limit the scope of the invention as defined in the claims.
Example 1
The embodiment provides a magnetron sputtering coating device, which comprises a vacuum chamber 1, a hollow magnetron sputtering cathode 2, a wire unwinding roller 3 and a wire winding roller 4 which are positioned in the vacuum chamber 1, a cathode power supply 5, a servo motor 6, a molecular pump 7, a mechanical pump 8, a flow limiting valve 9, a bypass valve 10 and a backing valve 11 which are positioned outside the vacuum chamber 1, and a cathode fixing shaft 12 and a vacuum gauge 13 which are fixed on the vacuum chamber 1, wherein the specific structure schematic diagram is shown in fig. 1, and the structures of the hollow magnetron sputtering cathode 2 and other components in fig. 1 are simplified for facilitating the observation of the position structures of the components.
Specifically, the hollow magnetron sputtering cathode 2 is of an annular cylindrical structure with a hollow area inside, a central connecting line of the wire unwinding roller 3 and the wire winding roller 4 is positioned in the hollow area of the hollow magnetron sputtering cathode 2, the side direction of the shielding shell 201 is taken as a vertical direction, the wire unwinding roller 3 and the wire winding roller 4 are respectively positioned at the upper end and the lower end of the hollow magnetron sputtering cathode 2 in the vertical direction, the hollow magnetron sputtering cathode 2 is fixed in the vacuum chamber 1 through a cathode fixing shaft 12, the cathode fixing shaft 12 is a flange fixing shaft which is fixed and communicated with the vacuum chamber 1, the cathode power supply 5 is connected with the hollow magnetron sputtering cathode 2 through the cathode fixing shaft 12, the servo motor 6 comprises a first servo motor 601 and a second servo motor 602, the first servo motor 601 is connected with the wire unwinding roller 3 and is used for driving the wire unwinding roller 3 to rotate, the second servo motor 602 is connected with the wire winding roller 4 and is used for driving the wire winding roller 4 to rotate, one side of the mechanical pump 8 is connected with the vacuum chamber 1 through a first connecting channel and the other side of the mechanical pump 7 through a second connecting channel and is connected with the molecular pump 7 through a second connecting channel and the vacuum chamber 1, the vacuum pump 1 is connected with the vacuum pump 1 through a third connecting channel and the vacuum valve 7 and the vacuum valve 1 is connected with the vacuum valve 1 through the vacuum valve 1, the vacuum valve 1 is arranged between the vacuum valve 1 and the vacuum valve 1.
The hollow magnetron sputtering cathode 2 comprises a shielding shell 201, a target barrel 202, a magnet unit 203, a water cooling unit 204, a target fixing part 205 and a power interface 206 which are positioned in the shielding shell 201, wherein a schematic front view cross section of a specific structure is shown in fig. 2, and a schematic top view cross section of the structure is shown in fig. 3.
Wherein the shielding shell 201 is a hollow tubular structure.
The target tube 202 is of an annular structure with a hollow area inside, is positioned on one side close to a central axis aa' of the shielding shell, comprises a sputtering target 202-1 and a sputtering inner wall 202-2, wherein the sputtering target 202-1 is of an annular structure with the hollow area inside, the sputtering target 202-1 is close to one side of the hollow area, the sputtering inner wall 202-2 is far away from one side of the hollow area, the sputtering inner wall 202-2 is positioned on the outer side surface of the sputtering target 202-1, the inner side surface of the sputtering inner wall 202-2 is tightly attached to the outer side surface of the sputtering target 202-1, a first target fixing part 205-1 and a second target fixing part 205-2 are respectively arranged at the upper end and the lower end of the sputtering target 202-1 and are used for fixing the sputtering target 202-1 on the inner side of the shielding shell 201, the first target fixing part 205-1 and the second target fixing part 205-2 are of an annular structure coaxially arranged, the sputtering target 202-1 is made of metal copper with the purity of 99.99%, the inner diameter of the metal copper is 45mm, and the outer diameter of the metal copper is 50mm.
The magnet unit 203 includes 112 magnet groups arranged in an array in a horizontal direction and a vertical direction between a side surface of the target tube 202 far from the hollow region and an inner side surface of the shield case 201, the magnet groups including two monopole magnets of opposite polarities, respectively an N-pole magnet and an S-pole magnet, in the magnet groups, the N-pole magnet and the S-pole magnet are sequentially arranged in the radial direction outside the target tube 202 far from the hollow region in the radial direction, in the horizontal direction of the bottom surface of the shield case 201, the magnet groups are arranged in an equiangular interval in the horizontal direction inside the shield case 201, 16 pairs of magnet groups are arranged in each layer in the horizontal direction, the polarities of the monopole magnets of the same radial length are alternately arranged at intervals in the horizontal direction, in the vertical direction, in the side surface direction of the shield case 201, the magnet units 203 are arranged with 7 layers of magnet groups distributed at equal intervals in the vertical direction, in the magnet groups distributed in the vertical direction, polarities of the monopole magnets close to the target cylinder 202 are alternately arranged at intervals, polarities of the monopole magnets far away from the target cylinder 202 are alternately arranged at intervals, the monopole magnets are in a cylindrical structure, the bottom surfaces of the monopole magnets are parallel to the bottom surface of the shielding shell 201, polarities of adjacent monopole magnets are opposite in the vertical direction and the horizontal direction inside the shielding shell 201, the magnetic force of the N pole magnet close to the target cylinder 202 is greater than 50% of the magnetic force of the S pole magnet in the vertical direction inside the shielding shell 201, an unbalanced magnetic field design is formed, the magnetic force of the S pole magnet in the same magnet group in the vertical direction and the radial direction is equal to the magnetic force of the N pole magnet, in the horizontal direction inside the shielding shell 201, in the same radial length, the magnetic force of the N pole magnet near the side of the target cylinder 202 is greater than 50% of the magnetic force of the S pole magnet, and an unbalanced magnetic field is also formed.
The water cooling unit 204 is used for nesting the magnet unit 203 and comprises a cooling water storage tank 204-1, a cooling water inlet channel 204-2 and a cooling water outlet channel 204-3, wherein the cooling water inlet channel 204-2 and the cooling water outlet channel 204-3 are arranged on one side, far away from the magnet unit 203, of the cooling water storage tank 204-1, the cooling water storage tank 204-1 is of a multi-channel annular nested structure, each layer of magnet group is arranged between each channel of the cooling water storage tank 204-1 in the vertical direction in the inside of the shielding shell 201, channels of the cooling water storage tank 204-1 are arranged between the magnet groups in the radial direction in the horizontal direction in the inside of the shielding shell 201, the channels of the cooling water storage tank 204-1 are in contact connection with one side, far away from the hollow area, of the cooling water storage tank 204-1 and the target barrel 202 surround the periphery of the magnet groups in the vertical direction and the horizontal direction, the cooling water inlet channel 204-2 is communicated with the side of the shielding shell 201 and extends to the outside of the shielding shell 201, and the cooling water outlet channel 204-3 is communicated with the side of the shielding shell 201 and extends to the outside of the shielding shell 201.
The power interface 206 is fixed and connected to the side surface of the shielding shell 201 and extends to the outside of the shielding shell 201, one end of the power interface 206 positioned in the shielding shell 201 is in contact connection with one side of the target tube 202 away from the hollow area, and one end of the power interface 206 positioned in the outside of the shielding shell 201 is connected with the cathode power supply 5 through the cathode fixing shaft 12.
The embodiment also provides a magnetron sputtering method based on the magnetron sputtering coating device, which comprises the following steps:
(1) The nickel fiber yarn with the diameter of 15 mu m to be coated is fixed on a yarn releasing roller, and the free end of the nickel fiber yarn passes through a hollow area inside a hollow magnetron sputtering cathode and is then fixed on a yarn collecting roller.
(2) And opening a bypass valve, a backing valve and a flow limiting valve, vacuumizing a vacuum chamber through a mechanical pump and a molecular pump, opening a vacuum gauge of the vacuum chamber, vacuumizing until the background vacuum degree of the vacuum chamber tested by the vacuum gauge is 8 multiplied by 10 -5 Pa, adopting argon with the purity of 99.999% as working gas, setting the flow of the working gas to be 20sccm, regulating the working vacuum degree to be 1Pa, and continuously circulating cooling water to each channel of a cooling water storage tank through a cooling water inlet channel and then flowing out through a cooling water outlet channel.
(3) The high-power pulse direct current power supply is used as a cathode power supply and connected with a power interface of a hollow magnetron sputtering cathode, a servo motor is used for synchronously rotating a wire releasing roller and a wire collecting roller, the rotating speed is controlled to be 12rpm, the power supply current in the coating process is set to be 0.8A, the pulse frequency is 6000Hz, the duty ratio is 50%, a metallic copper target with the purity of 99.99% is used for carrying out sputtering coating on nickel fiber wires to be coated, and a copper film is deposited on the nickel fiber wires.
Example 2
The difference between the embodiment and the embodiment 1 is that the magnetron sputtering method based on the magnetron sputtering coating device provided by the embodiment comprises the following steps:
(1) The nickel fiber yarn with the diameter of 15 mu m to be coated is fixed on a yarn releasing roller, and the free end of the nickel fiber yarn passes through a hollow area inside a hollow magnetron sputtering cathode and is then fixed on a yarn collecting roller.
(2) And opening a bypass valve, a backing valve and a flow limiting valve, vacuumizing a vacuum chamber through a mechanical pump and a molecular pump, opening a vacuum gauge of the vacuum chamber, vacuumizing until the background vacuum degree of the vacuum chamber tested by the vacuum gauge is 8 multiplied by 10 -4 Pa, adopting argon with the purity of 99.999% as working gas, setting the flow of the working gas to be 20sccm, regulating the working vacuum degree to be 1Pa, and continuously circulating cooling water to each channel of a cooling water storage tank through a cooling water inlet channel and then flowing out through a cooling water outlet channel.
(3) The method comprises the steps of connecting a high-power pulse direct-current power supply serving as a cathode power supply with a power interface of a hollow magnetron sputtering cathode, synchronously rotating a wire releasing roller and a wire collecting roller by adopting a servo motor, controlling the rotating speed to be 10rpm, setting the power supply current in a coating process to be 1A, setting the pulse frequency to be 8000Hz, performing sputtering coating on nickel fiber wires to be coated by adopting a metal copper target material with the purity of 99.99%, and depositing a copper film on the nickel fiber wires.
Example 3
The difference between the embodiment and the embodiment 1 is that the magnetron sputtering method based on the magnetron sputtering coating device provided by the embodiment comprises the following steps:
(1) The nickel fiber yarn with the diameter of 15 mu m to be coated is fixed on a yarn releasing roller, and the free end of the nickel fiber yarn passes through a hollow area inside a hollow magnetron sputtering cathode and is then fixed on a yarn collecting roller.
(2) And opening a bypass valve, a backing valve and a flow limiting valve, vacuumizing a vacuum chamber through a mechanical pump and a molecular pump, opening a vacuum gauge of the vacuum chamber, vacuumizing until the background vacuum degree of the vacuum chamber tested by the vacuum gauge is 5 multiplied by 10 -4 Pa, adopting argon with the purity of 99.999% as working gas, setting the flow of the working gas to be 20sccm, regulating the working vacuum degree to be 1Pa, and continuously circulating cooling water to each channel of a cooling water storage tank through a cooling water inlet channel and then flowing out through a cooling water outlet channel.
(3) The method comprises the steps of connecting a cathode power supply of high-power pulse direct current with a power interface of a hollow magnetron sputtering cathode, synchronously rotating a wire releasing roller and a wire collecting roller by a servo motor, controlling the rotating speed to be 15rpm, setting the power supply current of a coating process to be 0.5A, setting the pulse frequency to be 4000Hz, performing sputtering coating on nickel fiber wires to be coated by a metal copper target with the purity of 99.99%, and depositing a copper film on the nickel fiber wires.
Example 4
The difference between the present embodiment and embodiment 1 is that, in the magnetron sputtering coating device provided in this embodiment, the side direction of the shielding housing 201 is taken as the vertical direction, and the magnet unit 203 is arranged with two layers of magnet groups with the same structure and distributed at intervals in the vertical direction, so that the total height of the magnet groups in the vertical direction is unchanged. The remainder was the same as in example 1.
Example 5
The difference between this embodiment and embodiment 1 is that in the magnetron sputtering coating device provided in this embodiment, the side direction of the shielding case 201 is taken as the vertical direction, and the magnet unit 203 is arranged in the vertical direction to form a layer of magnet group located in the middle area, and the total height of the magnet group in the vertical direction is unchanged. The remainder was the same as in example 1.
Example 6
The difference between the present embodiment and embodiment 1 is that in the magnetron sputtering coating device provided in this embodiment, the bottom surface direction of the shielding case 201 is taken as the horizontal direction, and each layer of magnet groups has radially arranged magnet groups with 6 equal angle intervals. The remainder was the same as in example 1.
Example 7
The difference between the present embodiment and embodiment 1 is that in the magnetron sputtering coating device provided in this embodiment, the bottom surface direction of the shielding housing 201 is taken as the horizontal direction, each layer of magnet group is set to be a hollow annular structure, each layer of magnet group includes an N-pole monopole annular magnet and an S-pole monopole annular magnet, and the polarities of the monopole magnets of adjacent magnet groups are alternately set. The remainder was the same as in example 1.
Example 8
The difference between the embodiment and the embodiment 1 is that in the magnetron sputtering coating device provided in the embodiment, the magnetic force of the S-pole magnets arranged at any position is equal to the magnetic force of the N-pole magnets. The remainder was the same as in example 1.
Example 9
The difference between this embodiment and embodiment 1 is that in the magnetron sputtering coating device provided in this embodiment, in the vertical direction inside the shield case 201, the magnetic force of the S-pole magnet in the side close to the target cylinder 202 is greater than 50% of the magnetic force of the N-pole magnet, and in the vertical direction and along the radial direction, the magnetic force of the S-pole magnet in the same magnet group is equal to the magnetic force of the N-pole magnet, and in the horizontal direction inside the shield case 201, the magnetic force of the S-pole magnet in the side close to the target cylinder 202 is greater than 50% of the magnetic force of the N-pole magnet in the same radial length. The remainder was the same as in example 1.
Comparative example 1
The comparative example differs from example 1 only in that the magnetron sputtering coating apparatus provided in this comparative example omits the water cooling unit 204 in the hollow magnetron sputtering cathode 2. The remainder was the same as in example 1.
The films deposited by the magnetron sputtering coating apparatuses and the magnetron sputtering coating methods provided in examples 1 to 9 and comparative example 1 were tested as follows:
(1) Film deposition rate by measuring the diameter of the nickel wire before and after film coating, and calculating the ratio of the increase of the diameter and the thickness of the nickel wire to the film coating time.
(2) And (3) selecting three different positions on the nickel fiber wire plated with the copper film, measuring the diameters of the nickel fiber wire, and calculating the diameter average value and the standard deviation of the diameters of the three positions on the fiber wire.
(3) The utilization rate of the sputtering target material is obtained by calculating the ratio between the mass of the coating material on the surface of the coating material and the consumption mass of the hollow magnetic control target material.
The test results are shown in Table 1:
TABLE 1
The test results can be seen:
(1) It can be seen from examples 1 to 3 that the hollow magnetron sputtering cathode in the magnetron sputtering device provided by the invention can realize uniform coating of the magnetron sputtering cathode on complex structural members by arranging the target cylinder, the magnet unit and the water cooling unit in the shielding shell and designing the structures and the position relations of the unit components, and can optimize the coating quality of the cathode and improve the coating efficiency of the cathode.
FIG. 4 shows a scanning electron microscope image of a copper film deposited on a nickel fiber provided by example 1 of the present invention, and it can be seen from the image that the uniformity of the copper film plated on the surface of the nickel fiber is good by using the hollow magnetron cathode of the present invention for plating.
(2) As can be seen from a comparison of examples 1 and examples 4 to 5, the present invention can result in poor film uniformity, reduced coating rate, and reduced sputter target utilization if the number of layers of magnet units in the vertical direction is small, and even if two or more magnet units are used.
(3) As can be seen from comparison of examples 1 and examples 6 to 7, the present invention has the advantages that the thin film deposition rate is lowered, the uniformity of the coating film is lowered and the utilization effect on the sputtering target is deteriorated if the number of pairs of magnet units in the horizontal direction of each layer is small, and the magnetic force lines are not generated in the horizontal direction but only in the vertical direction if the magnet units distributed at equal angular intervals in each layer are replaced by annular magnet units with different polarities, so that the thin film is uneven in the radial direction and uniform in the vertical direction.
(4) As can be seen from comparison of examples 1 and 8-9, in the invention, if the magnetic forces of the unipolar magnets at any positions are the same, the magnetic fields are easy to be outwards dispersed, so that the sputtering target is wasted, the target utilization rate is low, the sputtering rate in the coating process is reduced, the sputtering uniformity is poor, and if the magnetic force of the unipolar magnets at one side close to the target cylinder in the vertical direction inside the shielding shell is greater than the magnetic force of the N-pole magnets, namely, the magnetic force of the unipolar magnets with even number of layers is greater than the magnetic force of the unipolar magnets with odd number of layers, the magnetic fields are more outwards dispersed, so that the sputtering target is outwards sputtered in the magnetron sputtering coating process, the utilization rate is more obviously reduced, the sputtering rate is lower, and the sputtering uniformity is poorer.
(5) As can be seen from comparison between example 1 and comparative example 1, the magnetron sputtering coating device provided by the invention cannot be started and operated after a period of operation if the water cooling unit is absent, and cannot realize the magnetron sputtering coating process.
In summary, the hollow magnetron sputtering cathode provided by the invention can realize a three-dimensional annular uniform magnetic field through arranging the target cylinder, the magnet unit and the water cooling unit in the shielding shell and designing the structures and the position relations of the unit components, thereby realizing the distribution of three-dimensional uniform plasmas, finally realizing the surrounding type three-dimensional uniform coating of the magnetron sputtering cathode on the surfaces of the complex structural components, and simultaneously optimizing the coating quality of the cathode, improving the coating efficiency of the cathode and improving the utilization rate of the sputtering target.
The applicant declares that the above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that are easily conceivable within the technical scope of the present invention disclosed by the present invention fall within the scope of the present invention and the disclosure.
Claims (10)
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4407713A (en) * | 1980-08-08 | 1983-10-04 | Battelle Development Corporation | Cylindrical magnetron sputtering cathode and apparatus |
| US5228963A (en) * | 1991-07-01 | 1993-07-20 | Himont Incorporated | Hollow-cathode magnetron and method of making thin films |
| US6254745B1 (en) * | 1999-02-19 | 2001-07-03 | Tokyo Electron Limited | Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source |
| US20060076231A1 (en) * | 2004-10-12 | 2006-04-13 | Southwest Research Institute | Method for magnetron sputter deposition |
| CN105839065A (en) * | 2016-05-26 | 2016-08-10 | 电子科技大学 | Magnetron sputtering film coating device and method and preparation method of nano particles |
| KR20230158834A (en) * | 2022-05-12 | 2023-11-21 | 박주온 | Apparatus for coating a wire with a thin film by sputtering |
| CN221344679U (en) * | 2023-10-31 | 2024-07-16 | 苏州迈为科技股份有限公司 | Vacuum coating device and solar cell preparation equipment |
-
2024
- 2024-11-11 CN CN202411596459.2A patent/CN119121163B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4407713A (en) * | 1980-08-08 | 1983-10-04 | Battelle Development Corporation | Cylindrical magnetron sputtering cathode and apparatus |
| US5228963A (en) * | 1991-07-01 | 1993-07-20 | Himont Incorporated | Hollow-cathode magnetron and method of making thin films |
| US6254745B1 (en) * | 1999-02-19 | 2001-07-03 | Tokyo Electron Limited | Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source |
| US20060076231A1 (en) * | 2004-10-12 | 2006-04-13 | Southwest Research Institute | Method for magnetron sputter deposition |
| CN105839065A (en) * | 2016-05-26 | 2016-08-10 | 电子科技大学 | Magnetron sputtering film coating device and method and preparation method of nano particles |
| KR20230158834A (en) * | 2022-05-12 | 2023-11-21 | 박주온 | Apparatus for coating a wire with a thin film by sputtering |
| CN221344679U (en) * | 2023-10-31 | 2024-07-16 | 苏州迈为科技股份有限公司 | Vacuum coating device and solar cell preparation equipment |
Non-Patent Citations (1)
| Title |
|---|
| 代海洋 著: "《类金刚石薄膜的制备、结构与性能研究》", 31 August 2020, 中国原子能出版社, pages: 39 - 40 * |
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