CN119208303B - Micro-coaxial switching MMIC surface mount packaging structure and preparation method thereof - Google Patents
Micro-coaxial switching MMIC surface mount packaging structure and preparation method thereof Download PDFInfo
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- CN119208303B CN119208303B CN202411733360.2A CN202411733360A CN119208303B CN 119208303 B CN119208303 B CN 119208303B CN 202411733360 A CN202411733360 A CN 202411733360A CN 119208303 B CN119208303 B CN 119208303B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
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Abstract
The application discloses a micro-coaxial switching MMIC surface-mounted packaging structure and a preparation method thereof, wherein a packaging tool comprises a packaging cavity formed by an upper cover plate and a lower cover plate, a radio frequency switching port is formed in the side wall of the packaging cavity, an MMIC chip and a micro-coaxial switching assembly are arranged in the packaging cavity, one end of the micro-coaxial switching assembly is connected with a radio frequency interface of the MMIC chip, and the other end of the micro-coaxial switching assembly extends to the radio frequency switching port. The application greatly simplifies the packaging difficulty of MMIC chips at millimeter wave frequency band level, and simultaneously, the micro coaxial energy form can be changed into a standard form surface mount interface through impedance transformation and vertical switching easily without causing signal loss, and has lower insertion loss.
Description
Technical Field
The invention relates to the technical field of MMIC surface-mounted packaging structures, in particular to a micro-coaxial switching MMIC surface-mounted packaging structure and a preparation method thereof.
Background
MMIC is a monolithic microwave integrated circuit, which is a functional circuit chip applied to microwave or even millimeter wave frequency range and is formed by connecting passive and active devices manufactured by a semiconductor substrate and a process method. The circuit has the advantages of good circuit performance, high reliability, small volume, light weight and the like, and is widely applied to the fields of modern communication, radars, electronic countermeasure and the like.
Millimeter wave frequency is 30 GHz-300 GHz, and wavelength range is 1 mm-10 mm, has characteristics such as wavelength length, frequency bandwidth, information capacity are big, and it is extensive to use in fields such as communication, radar, guidance, electron countermeasure. The input-output structure of the millimeter wave monolithic circuit is generally GSG, i.e., a ground-signal-ground pin structure, which essentially corresponds to a short section of coplanar waveguide. The packaging technology of MMIC is a key technology for realizing the butt joint of the on-chip circuit and other modules.
The existing packaging scheme mainly adopts a gold wire bonding or flip chip bonding mode to realize the connection of MMIC, microstrip line, coplanar waveguide and the like, and then a microstrip probe is used for connecting a single-chip circuit to a waveguide cavity to realize the signal conversion of the single-chip circuit-transition structure-waveguide. Because the MMIC flip chip bonding mode needs to independently manufacture salient points in a chip bonding area, the chip is generally smaller, the flip chip cannot be visually checked after flip chip bonding, and the chip is face down to mount and interconnect to bring difficulty to process operation, and the problems of welding short circuit and the like are easy to occur in grounding, gold wire bonding is generally adopted for packaging transition.
The gold wire bonding package generally needs to specially design microstrip line or coplanar waveguide conversion, if the transitional microstrip line or coplanar waveguide is too long, the problems of extra loss or poor matching and the like are also easy to be caused, especially the millimeter wave band is reached, the frequency is higher, and the parasitic capacitance and parasitic inductance are extremely easy to influence. Although the gold wire is important to be applied in the encapsulation of the millimeter wave MMIC chip, in the actual application scene, if the technical scheme of gold wire bonding after the chip is directly attached to the circuit board or the existing form of gold wire bonding transfer transition leading-out is adopted, the efficient and low-loss interconnection scheme cannot be effectively provided for the millimeter wave MMIC.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the problems in the related art. Therefore, one of the purposes of the invention is to provide a micro-coaxial switching MMIC surface mount packaging structure, which simplifies the packaging difficulty of MMIC chips at millimeter wave frequency band level and reduces the leading number loss.
In order to achieve the above purpose, the present application adopts the following technical scheme:
An MMIC surface mount package structure for micro coaxial switching, comprising:
The packaging cavity is formed by the upper cover plate and the lower cover plate in a surrounding mode, and a radio frequency switching port is formed in the side wall of the packaging cavity;
An MMIC chip and a micro-coaxial switching assembly are arranged in the packaging cavity, one end of the micro-coaxial switching assembly is connected with a radio frequency interface of the MMIC chip, and the other end of the micro-coaxial switching assembly extends to the radio frequency switching port.
Further, the radio frequency transfer port is located at one side of the lower cover plate far away from the upper cover plate, and the micro coaxial transfer assembly is of a vertical structure and is used for vertically transferring the MMIC chip located in the packaging cavity to the radio frequency transfer port.
Further, the micro coaxial switching assembly comprises an intermediate transmission wire and a shielding cavity positioned outside the intermediate transmission wire.
Further, the radio frequency transfer port is located at one side of the lower cover plate away from the upper cover plate, the middle transmission lead comprises a first lead-out part and a second lead-out part which are perpendicular to each other, the first lead-out part is parallel to the plane where the lower cover plate is located, one end of the first lead-out part is connected with a radio frequency interface of the MMIC chip, the other end of the first lead-out part is connected with the second lead-out part, the second lead-out part is perpendicular to the plane where the lower cover plate is located, and the other end of the second lead-out part is flush with the radio frequency transfer port at the bottom of the lower cover plate.
Further, the radio frequency interface is interconnected with the intermediate transmission wire through a gold wire lead.
Further, the micro coaxial switching component is in an impedance transformation mode.
Further, the number of the micro coaxial switching components corresponds to the number of the radio frequency interfaces in the MMIC chip one by one.
Further, a direct current switching port is formed in the side wall of the packaging cavity, a direct current interface is arranged in the MMIC chip, and the direct current interface and the direct current switching port are directly connected through a gold wire lead wire.
Further, the direct current switching port and the radio frequency switching port are positioned on one side of the lower cover plate far away from the upper cover plate.
The second objective of the present application is to provide a method for manufacturing a micro-coaxial switching MMIC surface mount package structure, comprising:
machining an MMIC chip placement groove on the top of the lower cover plate, and machining a radio frequency switching port on the bottom of the lower cover plate;
Preparing a micro coaxial switching assembly at the top of the upper cover plate by adopting a micro processing technology, wherein one end of the micro coaxial switching assembly is connected with a radio frequency interface of the MMIC chip, and the other end of the micro coaxial switching assembly extends to a radio frequency switching port and is flush with the radio frequency switching port at the bottom of the lower cover plate;
the upper cover plate covers the top of the lower cover plate, and the micro-coaxial switching MMIC surface-mounted packaging structure is formed by assembly.
Compared with the prior art, the technical scheme provided by the embodiment of the application has the following advantages:
The packaging cavity is formed by enclosing the upper cover plate and the lower cover plate, the side wall of the packaging cavity is provided with a radio frequency switching port, an MMIC chip and a micro-coaxial switching assembly are arranged in the packaging cavity, one end of the micro-coaxial switching assembly is connected with a radio frequency interface of the MMIC chip, and the other end of the micro-coaxial switching assembly extends to the radio frequency switching port. The micro coaxial switching component is adopted to lead out the radio frequency interface of the MMIC chip to the radio frequency switching port, and can carry out structural design and change according to the specific position of the radio frequency switching port, so that the traditional form of converting a gold wire lead into a waveguide interface is avoided, and the MMIC chip is not required to be in a form of inverted installation, embedding and the like by adopting a bump process, so that the packaging difficulty of the MMIC chip at the millimeter wave frequency band level is greatly simplified, and meanwhile, the micro coaxial energy form can be easily changed into a surface-mounted interface in a standard form through impedance transformation and vertical switching without causing signal loss.
Because the micro coaxial switching component is adopted as transition lead-out of the MMIC chip, a gold wire lead mode with a shorter structure can be adopted at the MMIC chip end, and a coplanar waveguide is formed by the ground-signal-ground pin and the micro coaxial switching component on the chip, the length of the gold wire lead is very short in the mode, the micro coaxial switching component can transmit signals in a TEM mode at the frequency of 0-450 GHz, the insertion loss of the micro coaxial switching component can be maintained at 0.2dB/cm, and the transfer port is easily converted into a standard SMT radio frequency interface through an impedance transformation mode, so that the micro coaxial mode is adopted as a packaged signal transmission mode, and the micro coaxial switching component can have lower insertion loss.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, and it will be obvious to a person skilled in the art that other drawings can be obtained from these drawings without inventive effort.
In the accompanying drawings:
FIG. 1 is a schematic view of the overall effect of the interior of the packaging chamber of the present application;
FIG. 2 is a schematic view of the top of the lower cover plate of the present application;
FIG. 3 is a schematic view of the structure of the upper cover plate of the present application;
FIG. 4 is a schematic diagram of a DC transfer port in a lower cover plate;
FIG. 5 is a schematic diagram of a micro coaxial switching assembly and an internal switching structure;
FIG. 6 is a schematic diagram of an impedance transformation port sized micro coaxial switching assembly and internal switching structure;
FIG. 7 is a schematic view of the lower cover plate assembled with the micro coaxial adapter assembly;
FIG. 8 is a schematic view showing the internal effects of the coaxial cable after the assembly of the lower cover plate and the micro coaxial adapter assembly;
FIG. 9 is a schematic view of an upper cover plate and a lower cover plate assembled to form a package structure;
Fig. 10 is a schematic diagram of the package structure after the final assembly of the upper and lower cover plates.
In the figure, 11, a lower cover plate, 12, an upper cover plate, 13, an MMIC chip, 14, a micro coaxial switching assembly, 141, an intermediate transmission wire, 142, a shielding cavity, 15, a direct current switching port, 151, a direct current IO signal pin, 152, an insulating sealing, 16, a radio frequency switching port, 161, a surface mounting port, 162, an impedance conversion surface mounting port, 163, a regular gap, 21, a direct current switching reserved groove, 22, a chip reserved groove, 23 and a micro coaxial reserved groove.
Detailed Description
For a clearer understanding of technical features, objects and effects of the present invention, a detailed description of embodiments of the present invention will be made with reference to the accompanying drawings. In the following description, it should be understood that the directions or positional relationships indicated by "front", "rear", "upper", "lower", "left", "right", "longitudinal", "transverse", "vertical", "horizontal", "top", "bottom", "inner", "outer", "head", "tail", etc. are configured and operated in specific directions based on the directions or positional relationships shown in the drawings, and are merely for convenience of describing the present invention, not to indicate that the mechanism or element referred to must have specific directions, and thus should not be construed as limiting the present invention.
It should also be noted that unless explicitly stated or limited otherwise, terms such as "mounted," "connected," "secured," "disposed," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed, mechanically connected, electrically connected, directly connected, indirectly connected via an intermediate medium, or in communication between two elements or in an interaction relationship between two elements. When an element is referred to as being "on" or "under" another element, it can be "directly" or "indirectly" on the other element or one or more intervening elements may also be present. The terms "first," "second," "third," and the like are used merely for convenience in describing the present invention and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated, whereby features defining "first," "second," "third," etc. may explicitly or implicitly include one or more such features. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, mechanisms, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
Aiming at the defects of gold wire bonding or flip chip welding in the prior art, the application adopts SMT (Surface Mount Technology) packaging technology and packaging technology matched with a micro coaxial switching component, and SMT is a pin-free surface assembly structure scheme, and batch and high-efficiency circuit interconnection can be realized through reflow soldering and other schemes, so that the surface mounting packaging structure suitable for MMIC in millimeter wave frequency range is a key for solving the contradiction. The micro coaxial switching assembly has the advantages of small volume, low loss and high isolation.
Example 1
Referring to fig. 1-10, the micro coaxial switching MMIC surface mount packaging structure provided by the application is characterized by comprising a packaging cavity surrounded by an upper cover plate 12 and a lower cover plate 11, wherein a radio frequency switching port 16 is formed in the side wall of the packaging cavity, an MMIC chip 13 and a micro coaxial switching assembly 14 are arranged in the packaging cavity, one end of the micro coaxial switching assembly 14 is connected with a radio frequency interface of the MMIC chip 13, and the other end extends to the radio frequency switching port 16.
According to the application, the micro coaxial switching assembly 14 is adopted to lead out the radio frequency interface of the MMIC chip 13 to the radio frequency switching port 16, the micro coaxial switching assembly 14 can be structurally designed and changed according to the specific position of the radio frequency switching port 16, the traditional gold wire lead wire waveguide interface form is avoided, and the MMIC chip 13 is not required to be in a flip-chip, embedding and other forms by adopting a bump process, so that the packaging difficulty of the MMIC chip 13 at the millimeter wave frequency band level is greatly simplified, and meanwhile, the micro coaxial energy form can be easily changed into a standard form surface-mounted interface through impedance transformation and vertical switching without causing signal loss, so that the packaging structure is an efficient millimeter wave MMIC packaging form.
According to the application, the micro coaxial switching component 14 is adopted as the transition lead-out of the MMIC chip 13, so that a gold wire lead mode with a shorter structure can be adopted at the end of the MMIC chip 13, the ground-signal-ground pin and the micro coaxial switching component 14 on the chip form a coplanar waveguide, the length of the gold wire lead is very short in the mode, the micro coaxial switching component 14 can transmit signals in a TEM mode at the frequency of 0-450 GHz, the insertion loss of the micro coaxial switching component 14 can be maintained at 0.2dB/cm, and the transfer port is easily converted into a standard SMT radio frequency interface through an impedance conversion mode, so that the micro coaxial mode is adopted as the packaged signal transmission mode, and the insertion loss can be lower.
Example 2
Referring to fig. 1-10, the micro coaxial switching MMIC surface mount packaging structure provided by the application is characterized by comprising a packaging cavity surrounded by an upper cover plate 12 and a lower cover plate 11, wherein a radio frequency switching port 16 is formed in the side wall of the packaging cavity, an MMIC chip 13 and a micro coaxial switching assembly 14 are arranged in the packaging cavity, one end of the micro coaxial switching assembly 14 is connected with a radio frequency interface of the MMIC chip 13, and the other end extends to the radio frequency switching port 16.
The packaging chamber in the application can be formed by assembling the upper cover plate 12 and the lower cover plate 11, and can also be formed by assembling a plurality of cover plates, and only the packaging chamber for accommodating the MMIC chip 13, the micro coaxial switching component 14 and the like needs to be formed between the plurality of cover plates. Similarly, the rf switching port 16 is located on a side wall of the packaging chamber, that is, the rf switching port 16 is an interface for connecting the whole packaging chamber and the outside, and is required to be located on an outer side wall of the packaging chamber, so as to be convenient for plugging with other external components.
The embodiment is described taking the case where the upper cover plate 12 and the lower cover plate 11 are assembled to form the package chamber as an example:
The rf transfer port 16 is located at a side of the lower cover plate 11 away from the upper cover plate 12, and the micro coaxial transfer assembly 14 is in a vertical structure, so that the MMIC chip 13 located inside the packaging chamber is vertically transferred to the rf transfer port 16.
The application defines that one side of the lower cover plate 11 close to the upper cover plate 12 is the top end of the lower cover plate 11, and one side of the lower cover plate 11 far away from the upper cover plate 12 is the bottom end of the lower cover plate 11, namely, a packaging cavity is formed by the top end of the lower cover plate 11 and the upper cover plate 12 after being assembled, an MMIC chip 13 is positioned at the top end of the lower cover plate 11, meanwhile, a radio frequency switching port 16 is positioned at the bottom end of the lower cover plate 11, and a micro coaxial switching assembly 14 acts on the position of leading out a radio frequency interface in the MMIC chip 13 to the radio frequency switching port 16.
The micro coaxial switching assembly 14 includes an intermediate transmission line 141 and a shielding cavity 142 outside the intermediate transmission line 141. The rf transfer port 16 is located at one side of the lower cover plate 11 away from the upper cover plate 12, the intermediate transmission wire 141 includes a first lead-out portion and a second lead-out portion that are perpendicular to each other, the first lead-out portion is parallel to the plane where the lower cover plate 11 is located, one end of the first lead-out portion is connected to the rf interface of the MMIC chip 13, the other end of the first lead-out portion is connected to the second lead-out portion, the second lead-out portion is perpendicular to the plane where the lower cover plate 11 is located, and the other end of the second lead-out portion is flush with the rf transfer port 16 at the bottom of the lower cover plate 11.
In this embodiment, the rf interface in the MMIC chip 13 is located in a horizontal plane parallel to the plane of the lower cover plate 11, and the rf switching port 16 is located at the bottom end of the lower cover plate 11 and needs to be vertically plugged with an external element, so that the micro coaxial switching assembly 14 with a bending structure needs to be provided for implementing rf signal connection in different planes.
The micro coaxial switching assembly 14 comprises a middle transmission wire 141 and a shielding cavity 142 at the outer side of the middle transmission wire 141, wherein the middle transmission wire 141 and the shielding cavity 142 at the outer side are made of metal materials, the middle transmission wire 141 is used for transmitting radio frequency signals, and the shielding cavity 142 is used for shielding the radio frequency signals so as to ensure that the radio frequency signals are orderly transmitted in the inner space of the shielding cavity 142. It should be noted that, in the process of preparing and forming the micro coaxial switching assembly 14, a dielectric layer connecting the intermediate transmission wire 141 and the shielding cavity 142 is needed to form and etch the intermediate transmission wire 141, and the dielectric layer is made of an insulating material, and does not play a role in signal transmission, and only serves as a supporting layer.
The micro coaxial switching assembly 14 is manufactured by a semiconductor process such as plating, photoetching, electroplating, polishing, wet etching and the like, and can be specifically performed according to the prior art, and in the process of manufacturing the micro coaxial switching assembly 14, the intermediate transmission wire 141 positioned in the shielding cavity 142 needs to be formed by means of a sacrificial layer and a dielectric layer, and then the sacrificial layer is removed. Since the micro coaxial switching element 14 has a certain length, if the sacrificial layer can only be removed through the two ends of the shielding cavity 142, the process of forming the micro coaxial switching element 14 will be increased. In order to facilitate processing, when the frequency range of the radio frequency signal is determined, a regular gap 163 may be formed in the shielding cavity 142, so as to ensure that the radio frequency signal is not reflected or acts on the gap when transmitted in the shielding cavity 142, thereby not only ensuring orderly transmission of the radio frequency signal, but also ensuring that the sacrificial layer can be removed from the regular gap 163, and simplifying the preparation difficulty of the micro coaxial switching assembly 14. As shown in fig. 5 and 6, a regular gap 163 is formed in the shielding layer, and the position of the regular gap 163 is determined according to the frequency range of the radio frequency signal, so as to avoid interference or leakage to the transmission of the radio frequency signal.
The radio frequency interface and the intermediate transmission wire 141 are interconnected by a gold wire lead. One end of the first lead-out portion in the intermediate transmission wire 141 is located at a side of the MMIC chip 13, that is, is adjacent to the radio frequency interface in the MMIC chip 13, the distance between the two is smaller, and is located in the same plane, and at this time, the radio frequency interface in the MMIC chip 13 and the end of the first lead-out portion are connected by a gold wire lead, so that it is ensured that the ground-signal-ground radio frequency signal in the MMIC chip 13 is led out into the micro-coaxial switching assembly 14 by using the short-distance gold wire lead, the problem of extra loss or poor matching caused by the overlarge length of the gold wire lead in the prior art is avoided, and the influence of parasitic capacitance and parasitic inductance caused by the gold wire lead can be avoided as much as possible for the millimeter wave band with higher frequency. According to the micro coaxial switching assembly 14, signals can be transmitted in a TEM mode at the frequency of 0-450 GHz, the insertion loss can be maintained at 0.2dB/cm, and the insertion loss of the whole packaging structure can be reduced by matching with a short gold wire lead.
The specific structure of the micro coaxial switching assembly 14 in the present application may be set according to the specific positions of the MMIC chip 13 and the radio frequency switching port 16, when the MMIC chip 13 and the radio frequency switching port 16 are located on the same plane, the middle transmission wire 141 in the micro coaxial switching assembly 14 is in a linear structure, and when the MMIC chip 13 and the radio frequency switching port 16 are located on different planes, the middle transmission wire 141 in the micro coaxial switching assembly 14 is in a bent structure, and in this embodiment, the middle transmission wire 141 in the micro coaxial switching assembly 14 may be in an L-shaped structure, that is, a vertical bent structure is provided. In the application, the bottom of the radio frequency switching port 16 is flush with the lower surface of the lower cover plate 11, namely, the plugging inlet of the packaging structure and the external element.
In the present application, the micro coaxial switching assembly 14 is an impedance transformation type micro coaxial switching assembly 14, as shown in fig. 6, and external elements with different impedances can be adapted by the impedance transformation type micro coaxial switching assembly, so that power transmission is maximized when the packaging structure is plugged with the external elements.
The number of the micro coaxial switching components 14 in the application is one-to-one corresponding to the number of the radio frequency interfaces in the MMIC chip 13. When the corresponding radio frequency interface needs to be connected and output, the corresponding radio frequency interface and the corresponding micro coaxial switching assembly 14 need to be connected and led out to the radio frequency switching port 16.
In the present application, the MMIC chip 13 needs to be led out of a dc signal in addition to a radio frequency signal. The side wall of the packaging cavity is provided with a direct current switching port 15, the MMIC chip 13 is provided with a direct current interface, and the direct current interface and the direct current switching port 15 are directly connected through a gold wire lead wire. The dc switch port 15 and the rf switch port 16 are located on a side of the lower cover plate 11 away from the upper cover plate 12.
The direct-current switching port 15 and the radio-frequency switching port 16 are arranged in the same side, so that when the packaging structure is spliced with an external element, only one side provided with the switching port is required to be exposed.
The application adopts a sealing glass insulator sintered at low temperature to be matched with a kovar alloy pin in a lower cover plate 11 to finish IO pin sintering, and the end surface of one surface for surface adhesion and the surface of a shell are kept on the same horizontal plane during sintering, and the sintering temperature is 650 ℃ so as to form a direct current switching port 15. The direct current switching port 15 is used for leading out direct current signals in the MMIC chip 13, the radio frequency switching port 16 is used for leading out radio frequency signals in the MMIC chip 13, and the direct current signals and the radio frequency signals can be led out to the bottom port position of the lower cover plate 11 for being convenient for being spliced with external elements.
Example 3
In the preparation method of the micro-coaxial switching MMIC surface-mounted packaging structure, an upper cover plate 12 and a lower cover plate 11 in the embodiment enclose a packaging cavity, and as shown in fig. 1, an MMIC chip 13, a micro-coaxial switching assembly 14, a radio frequency switching port 16 and a direct current switching port 15 are arranged in the packaging cavity. The method specifically comprises the following steps:
S1, a chip reserved groove 22 is processed at the top of the lower cover plate 11, and an emergent frequency switching port 16 is processed at the bottom of the lower cover plate 11.
The upper cover plate 12 and the lower cover plate 11 are used as main bodies for mounting and supporting the MMIC chip 13 and play a role in shielding the inside of the packaging cavity, so that the upper cover plate 12 and the lower cover plate 11 are metal shells. The direct current switching port 15 is used as a direct current signal pin in the packaging structure, the radio frequency switching port 16 is used as a radio frequency signal pin in the packaging structure, and the micro coaxial switching component 14 is used as a gold wire bonding lead interface of the MMIC chip 13 and is converted into a transition structure of the radio frequency switching port 16 of the flip-chip surface mount.
The method specifically comprises the following steps:
S11, preparing a lower cover plate 11 and an upper cover plate 12, wherein as shown in fig. 2 and 3, a processing material adopts kovar alloy, a processing mode adopts precision machining, a direct current switching reserved groove 21, a radio frequency switching reserved groove, a chip reserved groove 22 and a micro coaxial reserved groove 23 are reserved in the lower cover plate 11, the direct current switching reserved groove 21 is positioned at the bottom of the lower cover plate 11, and is of a through hole structure, and the diameter is generally 0.8mm. The radio frequency transfer pregroove may be further modified by laser machining.
And S12, after the upper cover plate 12 and the lower cover plate 11 are processed, gold plating treatment is carried out on the surfaces of the upper cover plate 12 and the lower cover plate 11.
S2, preparing a direct current IO signal pin 151 in a mode of insulating sealing 152 at the position of the direct current switching reserved groove 21 in the lower cover plate 11.
S21, as shown in FIG. 4, adopting kovar alloy wires with the diameter of 0.2mm and the length of 0.3mm as IO pin pins, wherein the bottom of the lower cover plate 11 is a plane, and carrying out electroless gold plating treatment on the surfaces.
And S22, matching the sealed glass insulator sintered at low temperature with the kovar alloy pins at the direct current switching reserved groove 21 of the lower cover plate 11 to finish sintering of the 12 direct current IO signal pins 151, wherein the end face of one surface for surface adhesion and the surface of the shell are kept on the same horizontal plane during sintering, and the sintering temperature is 650 ℃.
And S3, preparing a micro-coaxial switching assembly 14 at the top of the upper cover plate 12 by adopting a micro-machining process, wherein one end of the micro-coaxial switching assembly 14 is connected with the radio frequency interface of the MMIC chip 13, and the other end extends to the radio frequency switching port 16 and is flush with the radio frequency switching port 16 at the bottom of the lower cover plate 11. The method specifically comprises the following steps:
S31, as shown in FIG. 5, the micro coaxial switching structure is designed by adopting HFSS according to the requirements of the selected MMIC chip 13, such as the working frequency, the chip size, the loss and the like. One end of the micro coaxial switching structure adopts a form similar to a coplanar waveguide and is used for realizing wire lead interconnection with the MMIC chip 13, the other end of the micro coaxial switching structure, which is close to the radio frequency switching port 16, adopts a micro coaxial form and is downwards (in the surface-mount direction) converted into a vertical interconnection form, so that a GSG interface in a surface-mount form is formed, and the surface-mount port 161 is an opening positioned on the lower surface of the lower cover plate 11.
As shown in fig. 7, the micro coaxial switching assembly 14 may be an impedance transformation type micro coaxial switching assembly 14, that is, a micro coaxial switching assembly adopting an impedance transformation type. At this time, the surface mount port 162 for impedance transformation is an opening located on the lower surface of the lower cover plate 11.
S32, preparing the micro coaxial switching structure by adopting a semiconductor process such as a micro process method of film plating, photoetching, electroplating, grinding and polishing, wet etching and the like.
The micro coaxial switching assembly 14 is manufactured by a semiconductor process such as plating, photoetching, electroplating, polishing, wet etching and the like, and can be specifically performed according to the prior art, and in the process of manufacturing the micro coaxial switching assembly 14, the intermediate transmission wire 141 positioned in the shielding cavity 142 needs to be formed by means of a sacrificial layer and a dielectric layer, and then the sacrificial layer is removed. Since the micro coaxial switching element 14 has a certain length, if the sacrificial layer can only be removed through the two ends of the shielding cavity 142, the process of forming the micro coaxial switching element 14 will be increased. In order to facilitate processing, when the frequency range of the radio frequency signal is determined, a regular gap 163 may be formed in the shielding cavity 142, so as to ensure that the radio frequency signal is not reflected or acts on the gap when transmitted in the shielding cavity 142, thereby not only ensuring orderly transmission of the radio frequency signal, but also ensuring that the sacrificial layer can be removed from the regular gap 163, and simplifying the preparation difficulty of the micro coaxial switching assembly 14. As shown in fig. 5 and 6, a regular gap 163 is formed in the shielding layer, and the position of the regular gap 163 is determined according to the frequency range of the radio frequency signal, so as to avoid interference or leakage to the transmission of the radio frequency signal.
S4, the upper cover plate 12 covers the top of the lower cover plate 11, and the micro-coaxial switching MMIC surface-mounted packaging structure is formed by assembly. In particular, two or more micro coaxial switching assemblies 14 may be assembled with the lower cover plate 11 being processed by welding or bonding. For example, the two micro coaxial switching assemblies 14 are welded to the rf switching port 16 of the lower cover plate 11 in an assembled form similar to that of fig. 7 by using brazing tabs, wherein the welding surfaces are the upper surface of the lower cover plate 11 and the lower surface of the micro coaxial outer switching assembly, and the contact positions of the tabs are avoided from the surface mount port 161. The assembling mode can conveniently realize the transition from the MMIC chip 13 radio frequency interface gold wire lead to the micro coaxial coplanar waveguide, and then the transition to the surface-mounted GSG port through the micro coaxial switching assembly.
The lower surface (surface-mount direction) of the lower cover plate 11 after assembly should be kept flush with the GSG port in the form of a micro-coaxial surface mount so that the packaged MMIC surface mount is soldered to a carrier such as a circuit board. The internal effects of the micro coaxial switching assembly 14 are shown in fig. 8.
Finally, the upper cover plate 12 and the lower cover plate 11 after the chip assembly are welded together by adopting a laser welding method, and the surface-mounted packaging structure is in the form shown in fig. 9 and 10.
The packaging cavity is formed by enclosing the upper cover plate and the lower cover plate, the side wall of the packaging cavity is provided with a radio frequency switching port, an MMIC chip and a micro-coaxial switching assembly are arranged in the packaging cavity, one end of the micro-coaxial switching assembly is connected with a radio frequency interface of the MMIC chip, and the other end of the micro-coaxial switching assembly extends to the radio frequency switching port. The micro coaxial switching component is adopted to lead out the radio frequency interface of the MMIC chip to the radio frequency switching port, and can carry out structural design and change according to the specific position of the radio frequency switching port, so that the traditional form of converting a gold wire lead into a waveguide interface is avoided, and the MMIC chip is not required to be in a form of inverted installation, embedding and the like by adopting a bump process, so that the packaging difficulty of the MMIC chip at the millimeter wave frequency band level is greatly simplified, and meanwhile, the micro coaxial energy form can be easily changed into a surface-mounted interface in a standard form through impedance transformation and vertical switching without causing signal loss.
Because the micro coaxial switching component is adopted as transition lead-out of the MMIC chip, a gold wire lead mode with a shorter structure can be adopted at the MMIC chip end, and a coplanar waveguide is formed by the ground-signal-ground pin and the micro coaxial switching component on the chip, the length of the gold wire lead is very short in the mode, the micro coaxial switching component can transmit signals in a TEM mode at the frequency of 0-450 GHz, the insertion loss of the micro coaxial switching component can be maintained at 0.2dB/cm, and the transfer port is easily converted into a standard SMT radio frequency interface through an impedance transformation mode, so that the micro coaxial mode is adopted as a packaged signal transmission mode, and the micro coaxial switching component can have lower insertion loss.
It is understood that the foregoing examples merely illustrate preferred embodiments of the present invention, and the description thereof is specific and detailed and not to be construed as limiting the invention, and that it is understood that various changes and modifications can be made by one skilled in the art without departing from the spirit of the invention, and that it is intended to cover all modifications and adaptations of the invention as fall within the scope of the invention.
Claims (7)
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