CN119233065B - Image sensor matrix, electronic device and imaging method - Google Patents
Image sensor matrix, electronic device and imaging method Download PDFInfo
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/45—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
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Abstract
本发明提供了一种图像传感器矩阵、电子设备及成像方法，涉及图像采集技术领域，包括衬底层和至少一个图像采集单元，所述图像采集单元分别焊接固定在所述衬底层上，各个所述图像采集单元分别包括至少两个图像传感器；各个所述图像传感器的景深范围分别位于互相独立的区域内；相邻所述图像采集单元在同一水平投影面上紧密排布；各个所述图像传感器距离镜头的排列高度依次呈阶梯状递进分布。本发明通过将各个图像传感器间的景深宽度依次进行首尾相接的连续排布，能够获得被摄目标清晰成像的最大景深距离，同时配合图像融合技术，有利于满足对被摄目标物体进行远距离或超远距离的拍摄需求。
The present invention provides an image sensor matrix, an electronic device and an imaging method, which relate to the field of image acquisition technology, and include a substrate layer and at least one image acquisition unit, wherein the image acquisition units are respectively welded and fixed on the substrate layer, and each of the image acquisition units includes at least two image sensors; the depth of field range of each of the image sensors is respectively located in an independent region; the adjacent image acquisition units are closely arranged on the same horizontal projection plane; and the arrangement heights of each of the image sensors from the lens are progressively distributed in a step-like manner. The present invention can obtain the maximum depth of field distance for clear imaging of the target object by arranging the depth of field widths between the image sensors in sequence, and at the same time, in combination with the image fusion technology, it is conducive to meeting the requirements for long-distance or ultra-long-distance shooting of the target object.
Description
Technical Field
The present invention relates to the field of image acquisition technologies, and in particular, to an image sensor matrix, an electronic device, and an imaging method.
Background
When taking a photograph, the portion of the photograph that can be clearly imaged between the closest object and the farthest object from the camera is referred to as the "depth of field", i.e., the depth of field "refers to the range of imaging that is relatively clear before and after the focal point of the camera. In daily communications, we describe depth of field more often by "blurring", and usually when the image in the photograph is in the blurring range, the scene around the imaging subject tends to be blurred visually, and the benefit of this effect is obvious, so that the image of the subject looks more prominent in the picture, thereby helping us understand the picture subject and the shooting intention of the photographer.
Contrary to the blurring concept, in a specific distance before and after the focus, as long as the blurring degree of the image does not exceed the recognition capability of naked eyes, the image in the range can be considered as clear, and meanwhile, the object capable of being imaged clearly is also described as being in the depth of field of the shooting device. It can be seen that the "depth of field" is a range of distances from unclear to clear in the photograph, and is a lens imaging that occurs gradually over the length of the distance.
The depth of field of a photo shot by the existing camera imaging device is usually in a fixed range, and the depth of field is difficult to expand, so that the photo shot by the existing camera is difficult to clearly observe imaging details of an object far away from a lens, thereby being unfavorable for realizing micro-distance high-definition shooting of a short-distance target object and also being unfavorable for shooting and imaging a long-distance or ultra-long-distance shot target object, and leading to high clear acquisition difficulty of an optical image.
Disclosure of Invention
The invention aims to provide an imaging method which adopts a plurality of image sensors with partially overlapped depth ranges or sequentially continuous depth ranges to form an image acquisition unit matrix, can expand the length range of the depth of field or strengthen the imaging definition of a short-distance depth of field, and simultaneously is assisted by fusing a plurality of clear images, so that the problem of imaging blurring when shooting a long-distance or ultra-long-distance target object at present can be solved.
In order to achieve the above object, the present invention provides an image sensor matrix, including a substrate layer and at least one image acquisition unit, where the image acquisition units are welded and fixed on the substrate layer, each of the image acquisition units includes at least two image sensors, the image sensors can capture light entering a lens and form inverted and inverted imaging patterns, the image sensors convert the sensed light signal into an electrical signal, and transmit the electrical signal to a signal processing unit for processing to form photographic imaging, and by using a hollow hard cylindrical lens, the lens can be used as a channel through which light reflected by the surface of a photographed object passes through an optical lens, and achieve dust-proof and anti-collision protection on the optical lens, so as to reduce the risk of damage to the optical lens, the light will gradually pass through the optical lens and be refracted and imaged by different lenses after entering the inside of the lens, the optical lens can form an inverted real image, and the inner wall of the lens is fixed with a reflecting mirror having an angle of 45 ° with respect to the horizontal plane, and the reflecting mirror can form an upright virtual image for a photographer to observe; the optical lens consists of a plurality of transparent refracting mirrors, the transparent refracting mirrors are sequentially and fixedly arranged on the inner wall of the optical lens in a mode that the cross sections of the transparent refracting mirrors are parallel to each other, each transparent refracting mirror at least comprises a spherical surface, the spherical surface is a part of a spherical surface, at least two side surfaces can form a perfect circular projection on a horizontal projection surface, the transparent refracting mirrors comprise a spherical surface and a plane or comprise two spherical surfaces with unequal curvatures, the transparent refracting mirrors are convenient to use according to actual use occasions, the depth of field ranges of the image sensors are respectively positioned in mutually independent areas, the image acquisition units are fixedly connected to one side surface of the substrate layer, the image acquisition units can have the same reference height, the arrangement height difference between different image sensors can be conveniently adjusted in the process of installing the image acquisition units, so that the depth of field width of the progressive range is obtained, the image acquisition units and the lens form a sensor array capable of expanding the depth of field range, the definition of a final imaging image is conveniently improved, the substrate layer is a flat plate with uniform thickness, the substrate layer with uniform thickness only has the function of connecting the image sensors, the position adjustment of the image sensors does not provide gain, the substrate layer with uniform thickness is favorable for the direct determination of the depth of field of the image sensors, the substrate layer with uniform thickness is favorable for the preparation of the polyimide, the depth of field of the substrate layer with the advantages of being made of a plurality of polyimide, the adhesive, and the glass, and the adhesive.
As a further scheme of the invention, the substrate layer is a plane plate formed by organic materials or inorganic materials, the inorganic materials are metal aluminum or ceramic, the thermal expansion coefficient of the metal aluminum or ceramic is small, the reliability of the sensor system is improved, and meanwhile, the substrate layer made of the metal aluminum or ceramic has higher compressive strength and higher temperature bearing capacity than those of the substrate layer made of the organic materials, and the service life of the sensor system is prolonged.
As a further proposal of the invention, the image acquisition unit comprises a first image sensor, a second image sensor, a third image sensor and a fourth image sensor, wherein the arrangement heights of the first image sensor, the second image sensor, the third image sensor and the fourth image sensor are sequentially increased or decreased in a clockwise direction, when the arrangement heights of the first image sensor, the second image sensor, the third image sensor and the fourth image sensor are sequentially decreased in a clockwise direction, the distance between the first image sensor, the second image sensor, the third image sensor and the fourth image sensor and the optical center of the lens is sequentially increased, the arrangement height difference between the first image sensor and the second image sensor is thatAnd (2) and0, The height difference between the second image sensor and the third image sensor isAnd (2) and0, The height difference between the third image sensor and the fourth image sensor isAnd (2) andTo facilitate the fixed connection between the first, second, third and fourth image sensors and the substrate or dielectric layer, 0 can be such that>==>=>0。
As a further scheme of the invention, the depth of field ranges of two adjacent image sensors positioned on the same matrix are partially overlapped, the depth of field range of the first image sensor is DOF 1,DOF1 and is the distance AB from A point to B point, the depth of field range of the second image sensor is DOF 2,DOF2 and is the distance CD from C point to D point, the depth of field range of the third image sensor is DOF 3,DOF3 and is the distance EF from E point to F point, the depth of field range of the fourth image sensor is DOF 4,DOF4 and is the distance GH from G point to H point, the depth of field overlapping range of the first image sensor and the second image sensor is the distance CB from C point to B point and CB >0, the depth of field overlapping range of the second image sensor and the third image sensor is the distance ED from E point to D point and ED >0, and the depth of field overlapping range of the third image sensor and the fourth image sensor is the distance GF from G point to F point and GF >0.
The total depth of field DOF=DOF 1+DOF2+DOF3+DOF4 -CB-ED-GF, the overlapping length of each overlapping part can be adjusted, the size of the depth of field range overlapped by different image sensors can be adjusted, so that the image imaging fusion effect with smaller object distance and better imaging definition can be obtained, the depth of field range of the image sensors with different focal lengths can be partially overlapped, the depth of field range of a traditional single image sensor can be effectively expanded, so that an image with larger depth of field can be obtained, therefore, the greater the overlapping area of the depth of field, the clearer the object imaging after the image fusion can be obtained, and when the depth of field of the image sensors are overlapped in pairs, the clear shooting effect on an ultra-short distance object can be obtained, and the ultra-short distance can be within 5 cm.
The invention further provides a method for photographing a target object in a large distance or a super-long distance, which comprises the steps of enabling the depth of field range of two adjacent image sensors on the same matrix array to be continuous from head to tail, enabling the depth of field range of a first image sensor to be DOF 1',DOF1 'to be the distance A' B 'from point A' to point B ', enabling the depth of field range of a second image sensor to be DOF 2',DOF2' to be the distance C 'D' from point C 'to point D', enabling the depth of field range of a third image sensor to be DOF 3',DOF3 'to be the distance E' F 'from point E' to point F ', enabling the depth of field range of a fourth image sensor to be DOF 4',DOF4' to be the distance G 'H' from point G 'to point H', enabling the depth of field range of the total DOF '=DOF 1'+DOF2'+DOF3'+DOF4' =A 'B' +C 'D' +E 'F' +G 'H' to be continuous from head to tail, and enabling the maximum range under a certain number of image sensors to be obtained.
According to the invention, the first micro lens is formed at the top of the first image sensor, the second micro lens is fixed at the top of the second image sensor, the vertical height of the second micro lens is higher than that of the first micro lens, partial edges of the top of the first micro lens are shielded, dependence of the image sensor on the area of the substrate layer can be reduced, the image sensor is subjected to stepped height arrangement in the depth direction, occupation of the area of an integrated device taking the substrate layer as a reference is reduced, the top of the third image sensor is fixed with the third micro lens, the top of the fourth image sensor is fixed with the fourth micro lens, the height of the fourth micro lens is higher than that of the third micro lens, the welding height of the third micro lens is higher than that of the second micro lens, the projection profiles of the first micro lens, the second micro lens and the fourth micro lens on the horizontal projection surface are continuously and tightly connected, continuous collection and transmission of light rays entering the lens are facilitated, the first micro lens, the second micro lens and the fourth micro lens are respectively, the image sensor can be horizontally projected on the substrate layer, the image sensor is equal to each other, the occupation area of the image sensor can be reduced, and the image sensor can be horizontally projected on the top of the substrate layer is equal to the image sensor, and the area is horizontally projected on the top of the substrate, and the area of the image sensor is equal to the image sensor.
As a further scheme of the invention, a first chamfer supporting part is formed at the joint of the top of the second image sensor and the second micro lens, a second chamfer supporting part is formed at the joint of the third image sensor and the third micro lens, and the first chamfer supporting part and the second chamfer supporting part can respectively increase the supporting area of the image sensor to the bottom of the micro lens, so that the installation stability and the use reliability of the micro lens are improved.
As a further scheme of the invention, the projection width of the first chamfer supporting part on the horizontal projection surface is the area width of the second micro lens which shields the top of the first micro lens when the second micro lens is vertically projected, the projection width of the first chamfer supporting part on the horizontal projection surface is not more than one fourth of the projection width of the first micro lens on the horizontal projection surface, and the shielding area among the micro lenses is limited, so that the acquisition capacity of the image sensor on optical images can be ensured while the integration space of the image sensor is optimized.
The electronic equipment further comprises a lens and a machine body detachably connected with one end of the lens, the machine body is fixedly connected with the substrate layer right opposite to the inside of the lens, a shutter button is connected to the top of the machine body, an optical lens is arranged in the lens, an optical imaging can be carried out on a target object through the electronic equipment, and the image of the target object can be collected conveniently.
In a third aspect, there is also provided an imaging method applied to the electronic device as described above, the imaging method including:
The height of the image sensor in the image acquisition unit is adjusted, so that the capturing quantity of the light entering the lens by different image sensors can be adjusted by adjusting the height of the image sensor;
The image acquisition unit with the adjusted height is mounted on the electronic equipment, the lens is opposite to the target object, and light rays reflected by the target object form inverted real images in the electronic equipment so as to ensure the integrity of the acquired image of the target object;
360-degree rotation is carried out on the electronic equipment along the axial center of the lens, images are synchronously acquired, the omnibearing acquisition of images of the same target object can be completed through an image acquisition structure in the electronic equipment, and the acquisition of clear images of different angles of the target object is facilitated;
evaluating the sharpness of the image to obtain the sharpness of the target object, so as to be convenient for selecting images with different sharpness;
And a plurality of images are selected to be fused to obtain a clear object image, so that an image with a larger depth of field range than that of a single image sensor can be obtained.
As a further scheme of the invention, the height adjustment method of the image acquisition units is any one or combination of two methods of thinning a wafer and arranging a medium layer between the substrate layer and the image acquisition units, and the thickness of the image sensor of each image acquisition unit is thinned by the wafer thinning technology, so that the accuracy of adjusting the focal length of the image sensor can be improved in a mode of adjusting the thickness of the substrate layer and increasing the medium layer, and the accuracy of adjusting the depth of field width of the image sensor is improved.
The thickness of the first dielectric plate, the second dielectric plate, the third dielectric plate, the fourth dielectric plate, the fifth dielectric plate and the sixth dielectric plate is gradually increased or decreased, the first dielectric plate, the second dielectric plate, the third dielectric plate, the fourth dielectric plate, the fifth dielectric plate and the sixth dielectric plate are respectively correspondingly connected with image sensors with different heights, so that the connection height of each image sensor on the substrate layer is further adjusted, the depth of field range of a partition can be adjusted through connection of each recess and the image sensor through arrangement of recesses with different depths, when a flat substrate layer with uniform thickness is adopted, the substrate layer provides the function of connecting substrates for the image sensors, the substrate layer with uniform thickness can directly determine the width of the image sensors, and the flexibility of determining the depth of field of each image sensor is improved; the substrate layer is made of organic material or inorganic material, the organic material can be any one of phenolic resin, glass fiber, epoxy resin, polyimide and polytetrafluoroethylene material, the substrate layer made of the organic material has wear resistance and is favorable for keeping the supporting performance of the substrate layer, when the substrate layer is made of metal aluminum or ceramic material, the risk of deformation of the substrate layer can be reduced due to small thermal expansion coefficient of the metal aluminum or ceramic material, the reliability of the sensor system is favorable to being improved, and meanwhile, the substrate layer made of the metal aluminum or ceramic material has higher compressive strength and higher temperature bearing capacity than the substrate layer made of the organic material, the service life of the sensor system is prolonged, and the types of the image sensors comprise Sony IMX989, IMX800, IMX707, IMX610, IMX591 and IMX500.
Compared with the prior art, the invention has the beneficial effects that:
1. The invention is beneficial to obtaining the fusion image effect with smaller object distance and better imaging definition by adjusting the superposition length of the superposition depth of the depth-of-field parts of each image sensor, can effectively expand the depth-of-field width of a single image sensor to obtain an image with larger depth-of-field distance by repeatedly superposing partial depth-of-field ranges of each image sensor by adjusting the connection height of the image sensors, and can obtain the clear shooting effect on an ultra-short distance object when a plurality of image sensors are adopted and the depth-of-field ranges of the image sensors are completely superposed.
2. According to the invention, the depth of field width among the image sensors is sequentially arranged end to end, so that the maximum depth of field distance for clearly imaging the shot target can be obtained, and meanwhile, the requirement of shooting the shot target object in a long distance or ultra-long distance can be met by matching with an image fusion technology.
3. According to the invention, the top parts of the adjacent microlenses are sequentially shielded partially by the microlenses, so that the dependence degree of the image sensor on the area of the substrate layer 6 can be reduced, the image sensor is arranged stepwise in the depth direction, the occupation of the area of the integrated device taking the substrate layer 6 as a reference is reduced, and the arrangement space of the image acquisition unit 7 is optimized.
Drawings
FIG. 1 is a block diagram of an electronic device of the present invention;
FIG. 2 is a partially exploded view of the image acquisition unit connection structure of the present invention;
FIG. 3 is a block diagram of an image acquisition unit according to an embodiment of the present invention;
FIG. 4 is a front view showing the structure of an image capturing unit according to an embodiment of the present invention;
FIG. 5 is a schematic view of a partially overlapping depth of field of an image sensor according to the present invention;
FIG. 6 is a schematic view of a continuous depth of field of an image sensor according to the present invention;
FIG. 7 is a block diagram of one embodiment of a stacked arrangement of image sensors according to the present invention;
FIG. 8 is a top view of an image sensor stacking arrangement of the present invention;
Wherein, each reference sign is explained as follows:
1-lens, 2-dielectric layer, 201-first dielectric plate, 202-second dielectric plate, 203-third dielectric plate, 204-fourth dielectric plate, 205-fifth dielectric plate, 206-sixth dielectric plate, 3-shutter button, 4-optical lens, 5-body, 6-substrate layer, 7-image acquisition unit, 701-first image sensor, 7011-first microlens, 702-second image sensor, 7021-second microlens, 703-third image sensor, 7031-third microlens, 704-fourth image sensor, 7041-fourth microlens.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.
Example 1:
As shown in fig. 2, which is a partially exploded view of the connection structure of the image acquisition units of the present invention, an image sensor matrix is provided, which includes a substrate layer 6 and at least one image acquisition unit 7, the image acquisition units 7 are welded and fixed on the side surface of the substrate layer 6, each image acquisition unit 7 includes at least two image sensors, the image sensors can capture the light entering the lens 1 and form an inverted or inverted imaging pattern, the image sensors convert the sensed light signal into an electrical signal, and transmit the electrical signal to the signal processing unit for processing to form photographic images, the hollow hard cylindrical lens 1 is adopted, the lens 1 can be used as a channel of the light reflected by the surface of the object to be photographed to pass through the optical lens 4, dust-proof and anti-collision protection is realized on the optical lens 4, the risk of damage to the optical lens 4 is reduced, when the light enters the inside of the lens 1, the light gradually passes through the optical lens 4 and is refracted by different lenses to form an inverted or inverted imaging pattern, the inner wall of the lens 1 is fixed with a reflection mirror having an angle of 45 ° with respect to the horizontal plane, the reflection mirror can form a real image by the reflection mirror, and a real image can be formed by a real image of a viewer is convenient to take an image.
Preferably, the optical lens 4 is composed of a plurality of transparent refracting mirrors, the plurality of transparent refracting mirrors are sequentially and fixedly arranged on the inner wall of the optical lens in a mode that the cross sections of the transparent refracting mirrors are parallel to each other, each transparent refracting mirror at least comprises a spherical surface, the spherical surface is a part of a spherical surface, at least two side surfaces can form a perfect circular projection on a horizontal projection surface, and the transparent refracting mirror comprises a spherical surface and a plane or comprises two spherical surfaces with unequal curvatures, so that the transparent refracting mirrors are convenient to use according to actual use occasions; the depth of field ranges of the image sensors are respectively located in mutually independent areas, the depth of field ranges formed in the process of shooting objects by the image sensors can be adjusted by adjusting the relative heights of the image sensors, the adjustment of the definition of different positions of an imaging area is facilitated by adjusting the arrangement or superposition mode of the depth of field ranges, adjacent image acquisition units 7 are closely arranged on the same horizontal projection plane, the arrangement heights of the image sensors from a lens are sequentially distributed in a stepwise progressive manner, the image acquisition units 7 are fixedly connected to one side surface of a substrate layer 6, the image acquisition units 7 can have the same reference height, the arrangement height difference between different image sensors can be adjusted in the process of installing the image acquisition units 7, so that the depth of field width progressive in the length range is obtained, the image acquisition units 7 and the lens 1 form a sensor array capable of expanding the depth of field ranges, and the definition of a final imaging image is facilitated to be improved.
Preferably, the substrate layer 6 is a flat plate with uniform thickness, the substrate layer 6 is a flat plate formed by organic materials, the substrate layer 6 with uniform thickness only provides a function of connecting a substrate for the image sensor, no gain is provided for adjusting the depth of field of the image sensor, the substrate layer 6 with uniform thickness is beneficial to directly determining the depth of field range through the thickness of the image sensor, the organic materials are one or a combination of a plurality of phenolic resin, glass fiber, epoxy resin, polyimide and polytetrafluoroethylene, and the substrate layer 6 made of the organic materials has wear resistance and is beneficial to keeping the supporting performance of the substrate layer 6.
Preferably, the substrate layer 6 is made of inorganic material such as metal aluminum or ceramic, and the metal aluminum or ceramic has a small thermal expansion coefficient, so that the reliability of the sensor system is improved, and meanwhile, the substrate layer 6 made of metal aluminum or ceramic has higher compressive strength and higher temperature bearing capacity than those of the substrate layer 6 made of organic material, so that the service life of the sensor system is prolonged.
As shown in fig. 3, which shows a structure diagram of an image capturing unit according to an embodiment of the present invention, the image capturing unit 7 includes a first image sensor 701, a second image sensor 702, a third image sensor 703 and a fourth image sensor 704, wherein the arrangement heights of the first image sensor 701, the second image sensor 702, the third image sensor 703 and the fourth image sensor 704 sequentially increase or decrease in a clockwise direction, and when the arrangement heights of the first image sensor 701, the second image sensor 702, the third image sensor 703 and the fourth image sensor 704 sequentially decrease in a clockwise direction, the distances of the first image sensor 701, the second image sensor 702, the third image sensor 703 and the fourth image sensor 704 from the optical center of the lens 1 sequentially increase.
Referring to FIG. 4, which is a front view of an image capturing unit according to an embodiment of the present invention, the first image sensor 701 and the second image sensor 702 are arranged with a height difference of,And >0, the difference in height between the second image sensor 702 and the third image sensor 703 isAnd (2) and0, The difference in height between the third image sensor 703 and the fourth image sensor 704 isAnd (2) and0, To facilitate the fixed connection between the first 701, second 702, third 703 and fourth 704 image sensors and the substrate layer 6 or dielectric layer 2, one can make>==>=>0。
As shown in fig. 5, the image sensors of the present invention have partially overlapped depth of field, the depth of field ranges of two adjacent image sensors located on the same matrix array are partially overlapped, the depth of field range of the first image sensor 701 is DOF 1,DOF1 and is a distance AB from point a to point B, the depth of field range of the second image sensor 702 is DOF 2,DOF2 and is a distance CD from point C to point D, the depth of field range of the third image sensor 703 is DOF 3,DOF3 and is a distance EF from point E to point F, the depth of field range of the fourth image sensor 704 is DOF 4,DOF4 and is a distance GH from point G to point H, the depth of field of both the first image sensor 701 and the second image sensor 702 is a distance CB from point C to point B, CB >0, the depth of field of both the second image sensor 702 and the third image sensor 703 is a distance ED from point E to point D and ED >0, and the depth of field of both the third image sensor 703 and the fourth image sensor 704 are a distance GF from point G to point F and GF >0.
The total depth of field DOF=DOF 1+DOF2+DOF3+DOF4 -CB-ED-GF, the overlapping length of each overlapping part can be adjusted, the size of the depth of field range overlapped by different image sensors can be adjusted, so that the image imaging fusion effect with smaller object distance and better imaging definition can be obtained, the depth of field range of the image sensors with different focal lengths can be partially overlapped, the depth of field range of a traditional single image sensor can be effectively expanded, so that an image with larger depth of field can be obtained, therefore, the greater the overlapping area of the depth of field, the clearer the object imaging after the image fusion can be obtained, and when the depth of field of the image sensors are overlapped in pairs, the clear shooting effect on an ultra-short distance object can be obtained, and the ultra-short distance can be within 5 cm.
Example 2:
FIG. 6 shows a schematic view of a continuous depth of field of an image sensor according to the present invention, which is different from the above embodiment in that the depth of field ranges of two adjacent image sensors on the same matrix array are continuous from end to end, the depth of field range of the first image sensor 701 is DOF 1',DOF1 'which is the distance A' B 'from the point A' to the point B ', the depth of field range of the second image sensor 702 is DOF 2',DOF2' which is the distance C 'D' from the point C 'to the point D', the depth of field range of the third image sensor 703 is DOF 3',DOF3 'which is the distance E' F 'from the point E' to the point F ', and the depth of field range of the fourth image sensor 704 is DOF 4',DOF4' which is the distance G 'H' from the point G 'to the point H';
The total depth of field DOF '=dof 1'+DOF2'+DOF3'+DOF4' =a 'B' +c 'D' +e 'F' +g 'H', and the maximum depth of field range under a certain number of image sensors can be obtained by setting the depth of field ranges among different image sensors to be continuous from beginning to end in sequence, so that the imaging of a long-distance or ultra-long-distance target object is facilitated.
Example 3:
As shown in fig. 7, which is a structure diagram of an embodiment of the stacked arrangement of image sensors, a first microlens 7011 is formed on the top of the first image sensor 701, a second microlens 7021 is fixed on the top of the second image sensor 702, the vertical height of the second microlens 7021 is higher than that of the first microlens 7011, and the top of the first microlens 7011 is partially shielded to the extent of edge, so that the dependence of the image sensor on the area of the substrate layer 6 can be reduced, the stepped arrangement of the image sensors in the depth direction is beneficial to reducing the occupation of the area of an integrated device based on the substrate layer 6, a third microlens 7031 is fixed on the top of the third image sensor 703, a fourth microlens 7041 is fixed on the top of the fourth image sensor 704, the height of the fourth microlens 7041 is higher than that of the third microlens 7031, the welding height of the third microlens 7031 is higher than that of the second microlens 7021, and the continuous projection of the first microlens 7011, the second microlens 7021, the third microlens 7021 and the fourth microlens 7041 are tightly connected to the horizontal projection plane of the continuous projection lens 7041, and the continuous projection lens 7041 is beneficial to the continuous transmission of light.
As shown in fig. 8, which is a top view of the stacked arrangement of image sensors, the first microlens 7011, the second microlens 7021, the third microlens 7031 and the fourth microlens 7041 are respectively convex lenses with equal horizontal projection areas, and by fixing a plurality of image sensors with staggered tops on the substrate layer 6 at intervals, the device tiling area of the image sensors in the horizontal direction can be reduced, and the occupation of space can be optimized.
Preferably, a first chamfer supporting part is formed at the connection part between the top of the second image sensor 702 and the second microlens 7021, a second chamfer supporting part is formed at the connection part between the third image sensor 703 and the third microlens 7031, and the first chamfer supporting part and the second chamfer supporting part can respectively increase the supporting area of the image sensor to the bottom of the microlens, so that the installation stability and the use reliability of the microlens are improved.
Preferably, the projection width of the first chamfer supporting part on the horizontal projection plane is the area width of the second micro lens 7021, which is shielded by the top of the first micro lens 7011 during vertical projection, and the projection width of the first chamfer supporting part on the horizontal projection plane is not more than one fourth of the projection width of the first micro lens 7011 on the horizontal projection plane.
As shown in fig. 1, which is a structural diagram of an electronic device of the present invention, the electronic device further provides an electronic device, which comprises the image acquisition unit 7 according to the above scheme, the electronic device further comprises a lens 1 and a body 5 detachably connected with one end of the lens 1, the body 5 is fixedly connected with a substrate layer 6 in a manner of facing the inside of the lens 1, a shutter button 3 is connected to the top of the body 5, and an optical lens 4 is installed in the inside of the lens 1.
In connection with fig. 3, there is also provided an imaging method comprising:
the height of the image sensor in the image acquisition unit 7 in the scheme can be adjusted, so that the capturing amount of the light entering the lens by different image sensors can be adjusted by adjusting the height of the image sensor;
The image acquisition unit 7 with the height adjusted is arranged on the electronic equipment according to the scheme, the lens 1 is opposite to the target object, and light rays reflected by the target object form inverted real images in the electronic equipment so as to ensure the integrity of the acquired image of the target object;
360-degree rotation is carried out on the electronic equipment along the axial center of the lens 1, images are synchronously acquired, the omnibearing acquisition of images of the same target object can be completed through an image acquisition structure in the electronic equipment, and the acquisition of clear images of different angles of the target object is facilitated;
evaluating the sharpness of the image to obtain the sharpness of the target object, so as to be convenient for selecting images with different sharpness;
And a plurality of images are selected to be fused to obtain a clear object image, so that an image with a larger depth of field range than that of a single image sensor can be obtained.
The continuous images of the same target object at the circumferential angle can be continuously shot by adopting the lens 1 with partially overlapped depth of field ranges or sequentially continuous rotation of 360 degrees to acquire the images, so that the continuous images of the same target object at the complete visual angle are acquired, and the detailed imaging of the images can be conveniently realized by adopting computer image fusion software to fuse a plurality of clear images, wherein the fusion software can be Photoshop software.
Referring to fig. 4, the method of adjusting the height of the image capturing unit 7 is any one or two methods of thinning a wafer and setting a dielectric layer 2 between a substrate layer 6 and the image capturing unit 7, preferably, the dielectric layer 2 includes a plurality of dielectric plates tightly connected end to end in sequence, the plurality of dielectric plates are a first dielectric plate 201, a second dielectric plate 202, a third dielectric plate 203, a fourth dielectric plate 204, a fifth dielectric plate 205 and a sixth dielectric plate 206, the thicknesses of the first dielectric plate 201, the second dielectric plate 202, the third dielectric plate 203, the fourth dielectric plate 204, the fifth dielectric plate 205 and the sixth dielectric plate 206 are sequentially increased or decreased, the first dielectric plate 201, the second dielectric plate 202, the third dielectric plate 203, the fourth dielectric plate 204, the fifth dielectric plate 205 and the sixth dielectric plate 206 are correspondingly connected with image sensors with different heights respectively, so that the connection heights of the image sensors on the substrate layer 6 are further adjusted, the depth of field range of a partition can be adjusted through connection of the concave parts with the image sensors by arranging the concave parts with different depths, when a flat substrate layer with uniform thickness is adopted, the substrate layer 6 provides the function of connecting substrates to the image sensors, the substrate layer 6 with uniform thickness can directly determine the depth of field width through the thickness of the image sensors, and the flexibility of determining the depth of field width of each image sensor is improved; the substrate layer 6 is made of an organic material or an inorganic material, wherein the organic material can be any one of phenolic resin, glass fiber, epoxy resin, polyimide and polytetrafluoroethylene, the substrate layer 6 made of the organic material has wear resistance, is favorable for maintaining the supporting performance of the substrate layer 6, and when the substrate layer 6 is made of metal aluminum or ceramic material, because the thermal expansion coefficient of the metal aluminum or the ceramic is small, the risk of deformation of the substrate layer 6 can be reduced, the reliability of the sensor system is improved, meanwhile, compared with the substrate layer 6 made of organic materials, the metal aluminum or the ceramic has higher compressive strength and higher temperature bearing capacity, the service life of the sensor system is prolonged, the model of the image sensor comprises a Sony IMX989, an IMX800, an IMX707, an IMX610, an IMX591 and an IMX500, the thickness of the image sensor of each image acquisition unit 7 is thinned through a wafer thinning technology, the accuracy of adjusting the focal length of the image sensor is improved in a mode of adjusting the thickness of the substrate layer 6 and increasing the thickness of the medium layer 2, and the adjustment accuracy of the depth width of the depth of field of the image sensor is improved.
While embodiments of the present invention have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (10)
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