CN119243123A - Heating device and semiconductor processing equipment - Google Patents
Heating device and semiconductor processing equipment Download PDFInfo
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- CN119243123A CN119243123A CN202310808619.4A CN202310808619A CN119243123A CN 119243123 A CN119243123 A CN 119243123A CN 202310808619 A CN202310808619 A CN 202310808619A CN 119243123 A CN119243123 A CN 119243123A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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Abstract
本申请公开了一种加热装置及半导体处理设备，加热装置位于基座的一侧，具有中心区域和多个环形区域；每一环形区域包括沿环形区域周向均匀设置的多个加热灯和位于多个加热灯远离基座一侧的环形反射板；每一环形区域，加热装置还包括位于环形区域靠近中心区域一侧的反射组件；反射组件包括与对应的环形区域内的多个加热灯一一对应的多个反射板；反射板由环形反射板向基座的方向延伸，以限定对应的加热灯的光照射在基座的预设区域内；反射组件用于使多个加热灯对应的预设区域位于基座的不同径向范围内。本申请可以避免光线集中照射在同一区域而使光照沿半径方向呈断崖式分布，从而实现光照强度的渐变，可以提高加热的均匀性。
The present application discloses a heating device and a semiconductor processing equipment, wherein the heating device is located on one side of a base, and has a central area and a plurality of annular areas; each annular area includes a plurality of heating lamps evenly arranged along the circumference of the annular area and an annular reflector located on the side of the plurality of heating lamps away from the base; in each annular area, the heating device also includes a reflector component located on the side of the annular area close to the central area; the reflector component includes a plurality of reflectors corresponding one to one to the plurality of heating lamps in the corresponding annular area; the reflector plate extends from the annular reflector plate toward the base to limit the light of the corresponding heating lamp to be irradiated within a preset area of the base; the reflector component is used to make the preset areas corresponding to the plurality of heating lamps be located within different radial ranges of the base. The present application can avoid the light from being concentrated on the same area and make the light be distributed in a cliff-like manner along the radial direction, thereby realizing a gradual change in light intensity and improving the uniformity of heating.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing equipment, in particular to a heating device and semiconductor processing equipment.
Background
Chemical vapor deposition (Chemical Vapor Deposition, CVD) silicon epitaxy is the use of CVD techniques to grow thin films of silicon on the surface of silicon-based substrates (e.g., wafers). Specifically, the reaction gas is controlled to flow through the heated Wafer, and the reactants react chemically on the surface of the Wafer to generate the silicon simple substance, so that a layer of silicon simple substance film is formed on the surface of the Wafer.
As shown in fig. 1, a schematic structure of a conventional CVD epitaxial apparatus is shown, wherein a top plate and a bottom plate of a process chamber 10a are made of transparent materials, and an upper heating device 20a and a lower heating device 30a based on infrared light heating are respectively disposed on the upper and lower sides of the process chamber 10 a. The substrate 101a is placed on the susceptor 11a in the process chamber 10a, the upper heating device 20a directly heats the surface of the substrate 101a, and the lower heating device 30a heats the susceptor 11a to indirectly heat the substrate 101 a.
The temperature distribution on the surface of the substrate 101a has a significant effect on the thickness, resistivity, and slip line distribution of the silicon epitaxy, and the epitaxial layer growth rate is high in the region with high temperature, and the thickness is relatively thick. In the process of heating the substrate 101a, since the lower heating device 30a directly heats the susceptor 11a, the substrate 101a is indirectly heated via the heat conduction of the susceptor 11a, and the heat is distributed more uniformly in the conduction process. While the light of the upper heating device 20a is directed to the substrate 101a, the light distribution of the upper heating device 20a will dominate the temperature distribution of the surface of the substrate 101 a.
The conventional upper heating device 20a is generally composed of a plurality of heating lamps 21a, and the reflective plate 22a is disposed around the heating lamps 21a, so that the light emitted by the heating lamps 21a is directed to the surface of the substrate 101a, and the reflective plate 22a can enhance the light at certain radius positions due to reflection, and the light at other radius positions is weakened due to shielding, so that the light at a specific radius position has obvious difference on both sides of the position, and the problems of large local temperature difference and uneven temperature field on the surface of the substrate 101a occur.
Disclosure of Invention
In view of the above technical problems, the present application provides a heating device and a semiconductor processing apparatus, which can solve the problem of uneven temperature field generated by the existing upper heating device.
In order to solve the above-mentioned technical problems, in a first aspect, an embodiment of the present application provides a heating device for heating a susceptor in a semiconductor cavity, where the heating device is located at one side of the susceptor, and the heating device has a central area and a plurality of annular areas surrounding the central area from the central area to the outside in sequence;
each annular region comprises a plurality of heating lamps and an annular reflecting plate, wherein the heating lamps are uniformly arranged along the circumferential direction of the annular region, and the annular reflecting plate is positioned on one side of the heating lamps away from the base;
The heating device comprises a central area, a plurality of annular areas, a plurality of heating lamps, a reflecting assembly, a plurality of reflecting plates and a plurality of heating lamps, wherein the reflecting assembly is positioned on one side of the annular area close to the central area;
The reflecting plate extends from the annular reflecting plate to the direction of the base so as to limit the light of the corresponding heating lamp to irradiate in a preset area of the base;
The reflection assembly is used for enabling the preset areas corresponding to the heating lamps to be located in different radial ranges of the base, and the central axis of the annular area is coaxial with the central axis of the base.
Optionally, each of the reflecting plates in the reflecting assembly is parallel to the central axis of the base, or
The included angles between the reflecting plates and the central axis of the base are the same.
Optionally, the heights of the plurality of heating lamps belonging to the same annular region are the same;
When the heating lamp is used for heating, the distance between one end of the reflecting plate, which is close to the base, and the base is the first height of the reflecting plate, and the first heights of the reflecting plates belonging to the same reflecting assembly are not identical.
Optionally, in the same reflecting assembly, the first heights of any two adjacent reflecting plates are different.
Optionally, the heating device further comprises a driver for lifting and adjusting each reflecting plate.
Optionally, the heights of the plurality of heating lamps belonging to the same annular region are the same;
When the heating lamp is used for heating, the distance between one end of the reflecting plate, which is close to the base, and the base is the first height of the reflecting plate, and the first heights of the reflecting plates belonging to the same reflecting assembly are the same;
In each reflection assembly, at least part of the reflection plates are provided with light-passing holes, and the distance between the light-passing holes and the base is smaller than that between the corresponding heating lamps and the base.
Optionally, in each of the reflection assemblies, the distance between two adjacent light-passing holes and the base is different.
Optionally, in the two adjacent annular regions, on the same radius, the distance between the heating lamp of the outer annular region and the base is smaller than the distance between the heating lamp of the inner annular region and the base.
Optionally, in two adjacent annular regions, on the same radius, the first height of the reflecting plate of the outer annular region is smaller than the first height of the reflecting plate of the inner annular region.
Optionally, in each annular region, the reflection assembly is symmetrical about a center of the annular region.
Optionally, the heating device further includes a circular reflecting plate disposed in the central region, and the reflecting component in the innermost annular region is disposed around the circular reflecting plate;
And the distance between the circular reflecting plate and the base is larger than the first height of any reflecting plate in the reflecting assembly positioned in the innermost annular area.
In a second aspect, embodiments of the present application provide a semiconductor processing apparatus, including a semiconductor chamber, and further including a heating device as described in the above embodiments above and/or below the semiconductor chamber, where the heating device is configured to heat a susceptor in the semiconductor chamber during processing.
According to the heating device disclosed by the application, the annular reflecting plate is arranged on one side of the heating lamp far away from the base, the reflecting assembly is arranged on one side of the annular area close to the central area, the heating lamp irradiates towards the direction of the base under the surrounding and reflecting of the annular reflecting plate and the reflecting assembly to heat the base, and the light emitted downwards by the whole heating device tends to form a plurality of diaphragms, so that the independent control of illumination intensity at different radial positions can be realized. Because the reflection component comprises a plurality of reflection plates which are in one-to-one correspondence with a plurality of heating lamps in the corresponding annular area, the reflection plates extend from the annular reflection plates to the direction of the base, and the corresponding heating lamps can be defined to irradiate light in the preset area of the base through each reflection plate, so that the same circle of heating lamps can irradiate to positions with different radiuses, the condition that light is intensively irradiated in the same area to enable the illumination to be distributed in a cliff shape along the radial direction is avoided, gradual change of illumination intensity can be realized, and heating uniformity can be improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a schematic view of a conventional CVD epitaxial apparatus;
fig. 2 is a schematic structural view (bottom view) of an upper heating device according to a comparative example of the present application;
Fig. 3 is a schematic structural view (bottom view) of a heating device according to an embodiment of the present application;
FIG. 4 is an expanded cross-sectional view of a reflective assembly corresponding to the outer ring heating lamp of FIG. 3;
FIG. 5 is a schematic side elevational view of FIG. 3;
Fig. 6 is a schematic structural view of a semiconductor processing apparatus according to an embodiment of the present application;
FIG. 7 is a schematic diagram of a structure of a reflector with notches of different depths;
FIG. 8 is a schematic top view of a reflective assembly according to an embodiment of the present application;
Fig. 9 is a schematic structural view of a reflecting plate provided with light holes with different heights according to an embodiment of the present application;
Fig. 10 is an expanded cross-sectional view of a reflective assembly corresponding to the outer ring heating lamp of fig. 5.
The achievement of the objects, functional features and advantages of the present application will be further described with reference to the accompanying drawings, in conjunction with the embodiments. Specific embodiments of the present application have been shown by way of the above drawings and will be described in more detail below. The drawings and the written description are not intended to limit the scope of the inventive concepts in any way, but rather to illustrate the inventive concepts to those skilled in the art by reference to the specific embodiments.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application. Rather, they are merely examples of apparatus and methods consistent with aspects of the application as detailed in the accompanying claims.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the element(s) defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other like elements in different embodiments of the application having the same meaning as may be defined by the same meaning as they are explained in this particular embodiment or by further reference to the context of this particular embodiment.
It will be further understood that the terms "comprises," "comprising," "includes," and/or "including" specify the presence of stated features, steps, operations, elements, components, items, categories, and/or groups, but do not preclude the presence, presence or addition of one or more other features, steps, operations, elements, components, items, categories, and/or groups. The terms "or", "and/or", "including at least one of", and the like, as used herein, may be construed as inclusive, or mean any one or any combination. For example, "including at least one of" A, B, C "means" any of A, B, C, A and B, A and C, B and C, A and B and C ", and as yet another example," A, B or C "or" A, B and/or C "means" any of A, B, C, A and B, A and C, B and C, A and B and C ". An exception to this definition will occur only when a combination of elements, functions, steps or operations are in some way inherently mutually exclusive.
It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, these information should not be limited by these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope herein. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, depending on the context, unless the context indicates otherwise.
It should be understood that the terms "top," "bottom," "upper," "lower," "vertical," "horizontal," and the like indicate an orientation or positional relationship based on that shown in the drawings, and are merely for convenience of description and to simplify the description, and do not indicate or imply that the apparatus in question must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the application.
For convenience of description, in the following embodiments, orthogonal spaces formed in horizontal and vertical directions are taken as examples, and this precondition should not be construed as limiting the present application.
Referring to fig. 2, fig. 2 is a schematic structural view (bottom view) of an upper heating apparatus according to a comparative example of the present application, and referring to fig. 1, the upper heating apparatus 20a includes a reflective plate 22a disposed parallel to a base 11a of a process chamber 10a, and a plurality of heating lamps 21a disposed below the reflective plate 22a, wherein the reflective plate 22a can reflect upward light emitted from the heating lamps 21a downward to improve heating efficiency and effective utilization of light. All the heating lamps 21a may be arranged in a circle, and every 3 heating lamps 21a, a slope structure is provided on the reflecting surface of the reflecting plate 22a, so that the reflected light of one heating lamp 21a (distinguished by a cross-sectional line) corresponding to the slope structure can be irradiated to the central region of the substrate 101a to adjust the light distribution.
In the upper heating device 20a, the adjustable light is only reflected by the heating lamp 21a corresponding to the inclined surface structure. The scheme can only carry out small-amplitude adjustment on the temperature field, and the process range which can be covered is smaller. Based on this, the application provides a heating device with adjustable temperature field distribution and semiconductor processing equipment.
Referring to fig. 3-5, fig. 3 is a schematic structural diagram (bottom view) of a heating device according to an embodiment of the application, fig. 4 is an expanded cross-sectional view of a reflection assembly corresponding to the outer ring heating lamp in fig. 3, and fig. 5 is a schematic side view of fig. 3. The heating device is used for heating the susceptor in the semiconductor chamber, and is disposed on one side of the susceptor, for example, referring to fig. 6, and the heating device may be disposed outside the semiconductor chamber 100 or may be disposed inside the semiconductor chamber 100. May be disposed directly above the base 130, directly below the base 130, or both above and below the base 130.
The heating device comprises a central area 301 and a plurality of annular areas 302 which sequentially encircle the central area 301 outwards from the central area, wherein each annular area 302 comprises a plurality of heating lamps 40 uniformly arranged along the circumference of the annular area 302 and an annular reflecting plate 10 positioned on one side of the plurality of heating lamps 40 away from the base 130, each annular area 302 is further provided with a reflecting assembly 30 positioned on one side of the annular area close to the central area 301, each reflecting assembly 30 comprises a plurality of reflecting plates 31 which are in one-to-one correspondence with the plurality of heating lamps 40 in the corresponding annular area 302, the reflecting plates 31 extend from the annular reflecting plates 10 towards the base 130 to limit the light irradiation of the corresponding heating lamps 40 in a preset area of the base 130, and the reflecting assembly 30 is used for enabling the corresponding preset areas of the plurality of heating lamps 40 to be positioned in different radial ranges of the base, wherein the central axis of the annular area 302 is coaxial with the central axis of the base.
Taking the case of providing two annular regions 302 (302A and 302B), respectively, an outer ring annular region 302A and an inner ring annular region 302B, a plurality of heating lamps 40 are respectively provided in the two annular regions 302, for example, the outer ring annular region 302A may uniformly provide 32 heating lamps 40A, and the inner ring annular region 302B may uniformly provide 8 heating lamps 40B. The number of heat lamps 40 provided in each annular region 302 is set according to the heating requirements for a particular application. As one example, the heating lamp 40 may be an infrared heating lamp.
Correspondingly, two (10A and 10B) annular reflecting plates 10A on one side of the heating lamp 40A away from the base 130 may be provided on the annular reflecting plate 10B on one side of the heating lamp 40B away from the base 130, so that light from the heating lamp 40A may be reflected to a corresponding region on the base 130, and light from the heating lamp 40B may be reflected to a corresponding region on the base 130 by the annular reflecting plate 10B on one side of the heating lamp 40B away from the base 130.
Correspondingly, two reflection assemblies 30 (30A and 30B) are also arranged, the reflection assembly 30B is arranged on one side, close to the central area 301, of the inner ring-shaped area 302B, and the reflection assembly 30A is arranged on one side, close to the central area 301, of the outer ring-shaped area 302A.
The reflection assembly 30 includes a plurality of reflection plates 31 in one-to-one correspondence with the plurality of heating lamps 40 in the corresponding annular region 302. For example, when the outer ring-shaped region 302A is provided with 32 heating lamps 40A, the reflection assembly 30A includes 32 reflection plates 31, and when the inner ring-shaped region 302B is provided with 8 heating lamps 40B, the reflection assembly 30B includes 8 reflection plates 31. The reflection plate 31 extends from the annular reflection plate 10 toward the base 130 to define light irradiation of the corresponding heating lamps 40 within a predetermined region of the base 130. That is, the reflective plate 31 can limit the irradiation range of the heating lamps 40 to the central region of the susceptor 130 from the inside, and finally, the light of the plurality of heating lamps 40 is irradiated to different radial ranges of the susceptor 130.
The heating device of this embodiment works on the principle that the annular reflective plate 10 is disposed on the side of the heating lamp 40 away from the base 130, the reflective assembly 30 is disposed on the side of the annular region 302 close to the central region 301, the heating lamp 40 irradiates in the direction of the base 130 under the surrounding and reflection of the annular reflective plate 10 and the reflective assembly 30, the base 130 is heated, the light emitted downwards by the whole heating device tends to form a plurality of apertures, and the illumination intensity of different radial positions can be independently controlled. Since the reflection assembly 30 includes the plurality of reflection plates 31 corresponding to the plurality of heating lamps 40 in the corresponding annular area 302 one by one, the reflection plates 31 extend from the annular reflection plate 10 to the direction of the base 130, and the irradiation of the corresponding heating lamps 40 in the preset area of the base 130 can be limited by each reflection plate 31, so that the same circle of heating lamps 40 can irradiate to positions with different radiuses, the condition that the irradiation is concentrated in the same area to cause the irradiation to be distributed in a cliff shape along the radius direction is avoided, the gradual change of the irradiation intensity can be realized, and the heating uniformity can be improved.
It will be appreciated that for the outermost annular region 302, a reflective assembly 30 may be provided around its outer diameter to confine the light of the heating lamps 40 within the heating device.
In the present embodiment, the angle of the reflection assembly 30 in the vertical direction is not limited. As some examples, each of the reflecting plates 31 in the reflecting assembly 30 may be parallel to the central axis of the base 130, or may have the same included angle with the central axis of the base 130, for example, each of the reflecting plates 31 may be inclined from top to bottom by a predetermined angle (e.g., 10 °) toward the central axis of the base 130, or each of the reflecting plates may be inclined by a predetermined angle away from the central axis of the base 130. By combining the length setting of the reflecting plate 31 in the vertical direction, the installation height setting of the heating lamps 40, and the like, the same circle of the heating lamps 40 can be irradiated to the positions of the base 130 with different radiuses. The present application will be described in further detail with reference to specific examples.
In one embodiment, with continued reference to fig. 4 and 5, the heights of the plurality of heating lamps 40 within the same annular region 302 are the same. The distance between the end of the reflecting plate 31 close to the base 130 and the base 130 is the first height H of the reflecting plate 31 when the heating lamp 40 heats, and the first heights H of the reflecting plates 31 belonging to the same reflecting assembly 30 are not identical. For example, in fig. 4, the first heights of the reflecting plate 31B and the reflecting plate 31A differ by H 0, so that the notch 311 is formed on the reflecting assembly 30, and the heating lamps 40 corresponding to the reflecting plate 31A can irradiate to the positions of the base 130 with different radii through the notch 311, so as to realize gradual change of the illumination intensity on the radii. The reflective assembly 30 may be formed in a zigzag structure as shown in fig. 4 by providing a first height H of each reflective plate 31, for example, in the same annular region 302, with each of the heating lamps 40A having a notch 311, and the notch 311 and the projection of the corresponding heating lamp 40A on the annular region 302 are located on the same radius. The irradiation radius varies with the depth dimension H 0 of the notch 311. The arrangement of the notch 311 on the second annular reflecting plate 30 can expand the irradiation radius range of the heating lamp 40A, and realize gradual change of illumination intensity, so as to improve heating uniformity.
It should be noted that, the reflection assembly 30 may be an integrated structure, or may be formed by sequentially splicing a plurality of reflection plates 31, as shown in fig. 8. The notch 311 may be formed by providing adjacent two reflection plates 31 with unequal lengths in the vertical direction. The embodiment of the present application is not particularly limited to the specific molding method of the reflection assembly 30.
It should be emphasized that, by setting the shape and height of the reflecting plate 31, the depth H 0 of the notch 311 may be different, or the positions of the notch on the reflecting assembly 30 may be random, without periodicity. And the shape of the notch 311 is not limited to the illustrated rectangular shape, and may be, for example, a triangle, a circular arc, or a combination of different patterns, etc.
Preferably, in the same reflecting assembly 30, the first heights H of any two adjacent reflecting plates 31 are different, so that a regular saw-tooth structure can be formed, and the heating uniformity is improved. In addition, in each annular region 302, the reflective element 30 is preferably symmetrical about the center of the annular region 302, so that the symmetrically positioned heating lamps 40 can heat the same radius of the susceptor 130, and thus the illumination range can be symmetrically adjusted to improve the uniformity of the temperature field.
As an example, in two adjacent annular regions 302, on the same radius, the first height of the reflective plate 31 of the outer annular region 302 is smaller than the first height of the reflective plate 31 of the inner annular region 302. The heating lamps 40 can be prevented from being spread outward, reducing heating efficiency.
In one embodiment, referring still to FIG. 5, the distance L of the heat lamps 40 of the outer annular region 302 from the base 130 is less than the distance L of the heat lamps 40 of the inner annular region 302 from the base 130 at the same radius in two adjacent annular regions 302. Since a position near the center of the susceptor 130 is irradiated with more heating lamps 40, the heating unevenness is balanced by providing the inner heating lamps 40 farther from the susceptor 130, so that the heating uniformity of the susceptor 130 can be improved.
In one embodiment, referring to fig. 3 and 5, the heating device may further include a circular reflector 20 disposed in the central region 301, the reflector assembly 30 disposed in the innermost annular region 302 is disposed around the circular reflector 20, and the distance S between the circular reflector 20 and the base 130 is greater than the first height H of any reflector 31 in the reflector assembly 30 disposed in the innermost annular region 302. By providing the circular reflector plate 20 in a higher position, the blocking of the heating lamps of the inner annular region 302 by the circular reflector plate 20 can be reduced.
For convenience of description, referring to fig. 6 and 7, fig. 6 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present application, and fig. 7 is a schematic structural diagram of a reflecting plate provided with notches with different depths according to an embodiment of the present application, in which the heating device of the present application is applied. The surface located right below the circular area of the annular reflective plate 10 by the preset distance L 0 is set as the target plane 102, and when in use, the target plane 102 may be the top surface of the to-be-heated member (for example, a substrate), that is, after the to-be-heated member is loaded on the base 130, the distance from the top surface of the to-be-heated member to the bottom surface of the annular reflective plate 10 is L 0. The point on the target plane 102 facing the center of the annular region 302 is set as a center point O, and the intersection point of the light beam emitted from the heating lamp 40 corresponding to the notch 311 through the notch 311 and the target plane 102 is set as a target point a. As some examples, the depth of at least one notch 311 satisfies that the projection B of the heating lamp 40 corresponding to the notch 311 on the target plane 102 and the target point a are located on the same side of the center point O, as shown in view a in fig. 7. As described above, the notches 311 are preferably symmetrically arranged in pairs with respect to the center point O, and two symmetrical positions of the heating lamps 40 are schematically shown in the figure to emit light to the target plane 102 through the corresponding notches 311, and the irradiation radius of the corresponding heating lamps 40 can be expanded toward the center point O through the notches 311, so that all the light is prevented from being irradiated on the same radius, and gradual change of the illumination intensity is realized.
For another example, the depth of the at least one notch 311 may be such that the projection B of the heating lamp 40 corresponding to the notch 311 on the target plane 102 and the target point A are located on both sides of the center point O, as shown in view c in FIG. 7. Likewise, the two symmetrical heating lamps 40 are shown in the figure, and the two symmetrical heating lamps 40 emit light to the target plane 102 through the corresponding notches 311, and as the notches 311 are deeper, the heating lamps 40 can irradiate to the other side of the center point O through the corresponding notches 311, so that the heating lamps 40 have larger irradiation radius, and gradual change of illumination intensity is realized.
For another example, the depth of at least one notch 311 may be such that the target point A corresponding to the notch 311 coincides with the center point O, as shown in view b in FIG. 7. Also, two symmetrical-position heating lamps 40 are schematically shown, and light is emitted to the target plane 102 through the corresponding notches 311, and the heating lamps 40 just irradiate to the center point O through the corresponding notches 311, that is, the target point a coincides with the center point O.
In practical application, the depth of the notch 311 may be selected from three setting modes corresponding to fig. 7 a, b and c, one of them may be selected, or two or three may be selected for use. The temperature field can be regulated by controlling the switching and power of the heating lamps 40 corresponding to different notches.
In one embodiment, referring to fig. 6, the heights of the plurality of heating lamps 40 in the same annular region 302 are the same, the first heights H of the plurality of reflecting plates 31 in the same reflecting assembly 30 are not the same, and the heating apparatus may further include a driver 50, where the driver 50 is used to adjust the elevation of each reflecting plate 31. For example, the driver 50 may be a motor. The drivers 50 may be provided in one-to-one correspondence with the reflection plates 31, or the two heating lamps 40 may be positioned symmetrically, and the same driver 50 may perform the lifting control. When the temperature field needs to be greatly adjusted, the driver 50 can be used for adjusting the lifting of each reflecting plate 31 so as to realize larger process coverage.
Further, referring to fig. 6, the heating apparatus may further include a controller 60, and the controller 60 may individually control the switching of each heating lamp 40 and the heating power, so that the temperature field may be adjusted over a wider range.
In one embodiment, the light passing holes 312 may be further provided on the reflection plate 31 to change the radial irradiation range of the heating lamp. Referring to fig. 9 and 10, fig. 9 is a schematic structural view of a reflecting plate with light holes having different heights, and fig. 10 is an expanded cross-sectional view of a reflecting assembly corresponding to the annular region of the outer ring in fig. 5. In this solution, the heights of the plurality of heating lamps 40 belonging to the same annular area 302 and the first heights H of the plurality of reflecting plates 31 belonging to the same reflecting assembly 30 are the same, so that the manufacturing process of the reflecting assembly 30 can be simplified, in each reflecting assembly 30, at least part of the reflecting plates 31 are provided with light through holes 312, and the distance between the light through holes 312 and the base 130 is smaller than the distance between the corresponding heating lamps 40 and the base 130, so that the light of the heating lamps 40 can be ensured to irradiate downwards through the corresponding light through holes 312, so as to heat the base 130.
In fig. 9, from fig. a to fig. c, after the light passing holes 312A and 312B are provided, the heating lamp 40 can irradiate the areas with different radii on the target plane 102, and the irradiation radius of the heating lamp 40 is correspondingly changed along with the rise of the height of the light passing hole 312, so that the irradiation range of the heating lamp 40 on the target plane 102 can be expanded by the arrangement of the light passing hole 312, the local concentrated distribution of the heating lamp 40 is avoided, and the irradiation is performed on the same radius, thereby reducing the local temperature difference and realizing the gradual change of the illumination intensity. Each of fig. 9 illustrates a schematic view of two symmetrically positioned heating lamps 40 emitting light toward the target plane 102 through respective light passing holes 312.
Preferably, in each reflection assembly 30, the distance between two adjacent light-passing holes 312 and the base 130 is different. Therefore, two adjacent heating lamps 40 can irradiate different radius ranges, and gradual change of illumination intensity is realized, so that heating uniformity is improved.
Referring to fig. 6, the semiconductor processing apparatus includes a semiconductor chamber 100, and a heating device disposed outside the semiconductor chamber 100, for example, an upper heating device 200 may be disposed above the semiconductor chamber 100, and/or a lower heating device 300 may be disposed below the semiconductor chamber 100, where the upper heating device 200 and the lower heating device 300 may be the heating devices according to the above embodiments, and the heating devices may be used to heat the susceptor 130 of the semiconductor chamber 100 during processing. As an example, the top plate 110 and the bottom plate 120 of the semiconductor chamber 100 may be made of a transparent material, such as a quartz material. A susceptor 130 for supporting a substrate is disposed in the semiconductor chamber 100, and during a process, the lower heating device 300 heats the susceptor 130 through the bottom plate 120 and the upper heating device 200 heats the substrate through the top plate 110. The semiconductor processing apparatus may be a CVD silicon epitaxy apparatus.
Regarding other working principles and procedures of the semiconductor processing apparatus of this embodiment, reference is made to the description of the heating device in the foregoing embodiment of the present invention, and no further description is given here.
The foregoing has described in detail a heating apparatus and semiconductor processing equipment provided by the present application, and specific examples have been provided herein to illustrate the principles and embodiments of the present application. In the present application, the descriptions of the embodiments are focused on, and the details or descriptions of the other embodiments may be referred to for the parts not described in detail or in the description of one embodiment.
The foregoing is only a preferred embodiment of the present application, and therefore, the technical features of the technical solution of the present application may be combined arbitrarily, and for brevity, all of the possible combinations of the technical features in the foregoing embodiment may not be described, and all of the equivalent structures or equivalent processes using the descriptions of the present application and the contents of the drawings may be applied directly or indirectly to other related technical fields, so long as the combinations of the technical features are not contradictory, and all of them are included in the protection scope of the present application.
Claims (12)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310808619.4A CN119243123A (en) | 2023-07-03 | 2023-07-03 | Heating device and semiconductor processing equipment |
| TW113123588A TW202503946A (en) | 2023-07-03 | 2024-06-25 | A heating device and semiconductor processing equipment |
| PCT/CN2024/101242 WO2025007772A1 (en) | 2023-07-03 | 2024-06-25 | Heating device and semiconductor processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310808619.4A CN119243123A (en) | 2023-07-03 | 2023-07-03 | Heating device and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119243123A true CN119243123A (en) | 2025-01-03 |
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ID=94032312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310808619.4A Pending CN119243123A (en) | 2023-07-03 | 2023-07-03 | Heating device and semiconductor processing equipment |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN119243123A (en) |
| TW (1) | TW202503946A (en) |
| WO (1) | WO2025007772A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119560421A (en) * | 2025-02-05 | 2025-03-04 | 深圳市新凯来工业机器有限公司 | Heating device and process equipment |
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- 2023-07-03 CN CN202310808619.4A patent/CN119243123A/en active Pending
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2025007772A1 (en) | 2025-01-09 |
| TW202503946A (en) | 2025-01-16 |
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