CN119287502A - A method for calibrating a thermometer for an epitaxial furnace - Google Patents
A method for calibrating a thermometer for an epitaxial furnace Download PDFInfo
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- CN119287502A CN119287502A CN202411498381.0A CN202411498381A CN119287502A CN 119287502 A CN119287502 A CN 119287502A CN 202411498381 A CN202411498381 A CN 202411498381A CN 119287502 A CN119287502 A CN 119287502A
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000007740 vapor deposition Methods 0.000 claims abstract description 108
- 235000012431 wafers Nutrition 0.000 claims description 50
- 238000006243 chemical reaction Methods 0.000 claims description 49
- 238000011156 evaluation Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 238000005137 deposition process Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Abstract
The embodiment of the disclosure discloses a method for calibrating a thermometer of an epitaxial furnace, which comprises the steps of S1, preparing an epitaxial wafer at a reference vapor deposition temperature shown by the thermometer of the epitaxial furnace, S2, obtaining the resistivity corresponding to the epitaxial wafer, and S3, calibrating the thermometer according to the actual vapor deposition temperature corresponding to the resistivity.
Description
Technical Field
The embodiment of the disclosure relates to the technical field of semiconductor manufacturing, in particular to a method for calibrating a thermometer of an epitaxial furnace.
Background
The epitaxial growth process is to grow an epitaxial layer with controllable resistivity and thickness and no crystal originated particle (Crystal Originated Particles, COP) defect and no oxygen precipitation on the surface of the epitaxial layer by taking a polished wafer as a substrate under a certain condition. The epitaxial growth process mainly comprises a vacuum epitaxial deposition process, a vapor phase epitaxial deposition process, a liquid phase epitaxial deposition process and the like. The vapor phase epitaxy deposition process is to obtain an epitaxial layer by reacting a silicon source gas with hydrogen gas in a high-temperature environment to generate silicon atoms and depositing the silicon atoms on the surface of a substrate, and simultaneously, doping the epitaxial layer by introducing doping gas to obtain the required resistivity. Epitaxial wafers have less surface defects and controllable resistivity compared to polished wafers, and are therefore widely used in highly integrated circuit (INTEGRATED CIRCUIT, IC) devices and Metal-Oxide-semiconductor field effect transistor (MOSFET) processes.
Currently, epitaxial wafers are typically prepared by an atmospheric pressure vapor phase epitaxy deposition process, and the vapor phase deposition temperature during the preparation process is typically in the range of 1100 ℃ and 1150 ℃. The vapor deposition temperature is an extremely critical parameter in preparing an epitaxial wafer, and its variation has an important influence on the generation of defects in an epitaxial layer and the flatness of the epitaxial layer, so that it is necessary to reasonably monitor and control the vapor deposition temperature.
In view of this, how to accurately monitor the vapor deposition temperature is a technical problem that needs to be solved at present.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a method for calibrating a thermometer of an epitaxial furnace that can accurately calibrate the thermometer of the epitaxial furnace to accurately monitor and control vapor deposition temperature.
The technical scheme of the embodiment of the disclosure is realized as follows:
Embodiments of the present disclosure provide a method for calibrating a thermometer of an epitaxial furnace, the method comprising:
step S1, preparing an epitaxial wafer at a reference vapor deposition temperature shown by a thermometer of an epitaxial furnace;
S2, obtaining the resistivity corresponding to the epitaxial wafer;
And step S3, calibrating the thermometer according to the actual vapor deposition temperature corresponding to the resistivity.
In some examples, the preparing the epitaxial wafer at the reference vapor deposition temperature shown by the thermometer of the epitaxial furnace includes:
and respectively preparing a plurality of corresponding epitaxial wafers at a plurality of reference vapor deposition temperatures.
In some examples, the calibrating the thermometer according to the actual vapor deposition temperature corresponding to the resistivity includes:
Obtaining a temperature deviation value between the reference vapor deposition temperature and the actual vapor deposition temperature corresponding to the resistivity;
And calibrating the thermometer according to the temperature deviation value.
In some examples, the calibrating the thermometer according to the actual vapor deposition temperature corresponding to the resistivity includes:
Fitting to obtain reference curves between the corresponding multiple resistivities of the multiple epitaxial wafers and the corresponding multiple reference vapor deposition temperatures;
fitting to obtain actual curves between the plurality of resistivities and a plurality of corresponding actual vapor deposition temperatures;
And calibrating the thermometer according to the reference curve and the actual curve.
In some examples, the calibration of the thermometer is performed by adjusting the thermal emissivity of the thermometer.
In some examples, the thermometer includes a first sub-thermometer disposed above a reaction chamber of the epitaxial furnace and a second sub-thermometer disposed below the reaction chamber, the method further comprising:
After calibrating the thermometer, performing calibration evaluation according to the difference value between the reference vapor deposition temperatures respectively shown by the first sub-thermometer and the second sub-thermometer in the vapor deposition reaction.
In some examples, the calibration is determined to be complete when the difference is less than or equal to a threshold value, or
And when the difference value is larger than the threshold value, repeatedly executing the steps S1 to S3 to continuously calibrate the thermometer.
In some examples, the reference vapor deposition temperature is in a range of 1100 ℃ to 1150 ℃.
In some examples, during preparation of each of the plurality of epitaxial wafers, the same flow of dopant gas is introduced into the reaction chamber of the epitaxial furnace and the duration of introduction of the dopant gas is the same.
In some examples, the flow rate of the dopant gas is 220sccm to 240sccm and the duration of the dopant gas is 55s to 70s.
In the present disclosure, an epitaxial wafer is first prepared at a reference vapor deposition temperature shown by a thermometer of an epitaxial furnace. Since the vapor deposition temperature has a great influence on the resistivity of the epitaxial wafer, the reference vapor deposition temperature shown by the thermometer is compared according to the actual vapor deposition temperature corresponding to the resistivity of the epitaxial wafer in the present disclosure, thereby calibrating the thermometer. The method enables the reference vapor deposition temperature shown by the calibrated thermometer to be closer to the actual vapor deposition temperature in the reaction chamber so as to accurately reflect the temperature distribution condition in the reaction chamber, and avoids the disassembly and the installation of components in the reaction chamber, thereby avoiding the productivity reduction and frequent process verification caused by the disassembly and the assembly.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial furnace in the related art according to an embodiment of the present disclosure;
FIG. 2 is a flow chart of a method for calibrating a thermometer of an epitaxial furnace provided in an embodiment of the present disclosure;
Fig. 3 is a schematic diagram of a reference curve between resistivity and reference vapor deposition temperature and an actual curve between resistivity and actual vapor deposition temperature fitted by an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings in the embodiments of the present disclosure.
It should be noted that, for the sake of clarity, not all features of a particular embodiment are described and illustrated in the specification and drawings, and, to avoid unnecessarily obscuring the technical solutions of interest to the present disclosure, only device structures and method steps closely related to the technical solutions of the present disclosure are described and illustrated in the specification and drawings, while other details that are not germane to the technical content of the present disclosure and known to those skilled in the art are omitted.
Referring to fig. 1, there is shown a schematic structural view of an epitaxial furnace 1 in the related art. The epitaxial furnace 1 may include:
A susceptor 10, the susceptor 10 being for carrying a substrate W.
A support frame 20 for supporting the susceptor 10 and driving the susceptor 10 to rotate about the central axis X at a certain speed during epitaxial growth. Wherein the substrate W rotates with the susceptor 10 about the central axis X during rotation of the susceptor 10, that is to say the substrate W remains stationary with respect to the susceptor 10. Thereby, there is a small gap G between the radial edge of the susceptor 10 and the preheating ring 10A.
A bell jar 30, the bell jar 30 including an upper bell jar 30A and a lower bell jar 30B, the upper bell jar 30A and the lower bell jar 30B together enclosing a reaction chamber RC in which the susceptor 10 and the support frame 20 are accommodated. Wherein the susceptor 10 divides the reaction chamber RC into an upper reaction chamber RC1 and a lower reaction chamber RC2, and the substrate W is placed in the upper reaction chamber RC 1. Typically, the gas pressure in the upper reaction chamber RC1 is slightly greater than the gas pressure in the lower reaction chamber RC2 such that the gas in the upper reaction chamber RC1 may enter the lower reaction chamber RC2 through the gap G.
The upper bell jar 30A and the lower bell jar 30B are made of quartz.
The gas inlet 40 is used to deliver a reactive gas, such as a silicon source gas, for example SiHCl 3, and a dopant gas, for example B 2H6 or PH 3, into the upper reaction chamber RC 1.
And an exhaust port 50 for exhausting the reaction offgas and by-products out of the reaction chamber RC.
A plurality of heating assemblies 60, the plurality of heating assemblies 60 being disposed at the periphery of the upper and lower bell jars 30A and 30B and for providing a high temperature environment for the vapor deposition reaction in the reaction chamber RC through the upper and lower bell jars 30A and 30B.
The temperature in the reaction chamber RC can be measured by the thermometer 70. The thermometer 70 is typically a high temperature infrared thermometer. The thermometer 70 comprises a first sub-thermometer 701 and a second sub-thermometer 702, wherein the first sub-thermometer 701 is arranged above the reaction chamber RC and the second sub-thermometer 702 is arranged below the reaction chamber RC. In a specific implementation, the first sub-thermometer 701 and the second sub-thermometer 702 are respectively used for monitoring and feeding back the temperature of the central position of the upper surface of the substrate W and the central position of the lower surface of the susceptor 10, so as to adjust the temperature in the reaction chamber RC by controlling the power ratio of the heating assembly 60.
In the vapor deposition process, if the temperature in the reaction chamber RC changes, defects such as slip may occur in the epitaxial layer of the prepared epitaxial wafer, and the flatness, resistivity, and the like of the epitaxial wafer may change. For example, after the heating assembly 60 or the susceptor 10 is replaced, the thermometer 70 needs to be calibrated to match the reference vapor deposition temperature shown by the thermometer 70 with the actual vapor deposition temperature in the reaction chamber RC due to the change of the material or the spatial position of the components.
In the related art, to avoid the troublesome disassembly of the components in the epitaxial furnace 1, the temperature corresponding to when the power of the heating assembly 60 reaches a power is generally taken as the reference vapor deposition temperature shown by the thermometer 70, and the thermal emissivity of the thermometer 70 is further adjusted so that the indication of the thermometer 70 reaches the reference vapor deposition temperature, and the reference vapor deposition temperature shown by the thermometer 70 is regarded as the actual vapor deposition temperature in the reaction chamber RC. The heating assembly 60 may deviate from the supplied power and the actual power due to the difference in the actual use time. Therefore, when the heating element 60 is used for a long time, the actual power of the heating element 60 cannot be accurately obtained, and when the thermometer 70 is calibrated by using the actual power of the heating element 60, the reference vapor deposition temperature shown by the calibrated thermometer 70 will also deviate due to the deviation of the actual power of the heating element 60, so as to influence the determination of the actual vapor deposition temperature in the reaction chamber RC, thereby influencing various performances of the prepared epitaxial wafer.
In view of the above, it is of great importance to provide a method for accurately calibrating a thermometer for the production of epitaxial wafers. Specifically, referring to fig. 2, a method for calibrating a thermometer of an epitaxial furnace according to an embodiment of the present disclosure is shown, the method comprising:
step S1, preparing an epitaxial wafer at a reference vapor deposition temperature shown by a thermometer of an epitaxial furnace;
s2, obtaining the resistivity corresponding to the epitaxial wafer;
And S3, calibrating the thermometer according to the actual vapor deposition temperature corresponding to the resistivity.
It should be noted that when the actual vapor deposition temperature in the reaction chamber RC is monitored by the first sub-thermometer 701 and the second sub-thermometer 702 shown in fig. 1, the first sub-thermometer 701 and the second sub-thermometer 702 need to be calibrated in the present disclosure.
In some examples, the reference vapor deposition temperature is an indication of the first sub-thermometer 701.
In addition, the first sub-thermometer 701 is used to monitor the temperature of the center position of the upper surface of the substrate W and the second sub-thermometer 702 is used to monitor the temperature of the center position of the lower surface of the susceptor 10 during the implementation. In order to make the reference vapor deposition temperatures shown by the first sub-thermometer 701 and the second sub-thermometer 702 more accurately reflect the actual vapor deposition temperatures in the reaction chamber RC, the positions of the first sub-thermometer 701 and the second sub-thermometer 702 may be adjusted according to the actual situation during the implementation. For example, by adjusting the position of the second sub-thermometer 702 such that the second sub-thermometer 702 is able to monitor the temperature of the center location of the susceptor 10. Specifically, as shown in fig. 1, when the position of the second sub-thermometer 702 is set improperly, it may be caused that the temperature measured by the second sub-thermometer 702 is the temperature of the connection rod 80 connected to the base 10, not the temperature of the center position of the lower surface of the base 10.
In the present disclosure, an epitaxial wafer is first prepared at a reference vapor deposition temperature shown by the thermometer 70 of the epitaxial furnace. Since the vapor deposition temperature has a great influence on the resistivity of the epitaxial wafer, the resistivity corresponding to the epitaxial wafer is obtained through testing in the present disclosure, and the reference vapor deposition temperature shown by the thermometer 70 is compared according to the actual vapor deposition temperature corresponding to the resistivity of the epitaxial wafer, thereby calibrating the thermometer 70. The method enables the reference vapor deposition temperature shown by the calibrated thermometer 70 to be closer to the actual vapor deposition temperature in the reaction chamber RC so as to accurately reflect the temperature distribution condition in the reaction chamber RC, and avoids the disassembly and the assembly of components in the reaction chamber RC, thereby avoiding the productivity reduction and frequent process verification caused by disassembly and assembly.
For the solution shown in fig. 2, in some possible embodiments, preparing the epitaxial wafer at the reference vapor deposition temperature indicated by the thermometer of the epitaxial furnace includes:
and respectively preparing a plurality of corresponding epitaxial wafers at a plurality of reference vapor deposition temperatures.
In order to calibrate the thermometer 70 more precisely, a plurality of epitaxial wafers are prepared at a plurality of reference vapor deposition temperatures in a specific implementation process, so that the thermometer 70 can be calibrated according to the resistivity of the epitaxial wafer corresponding to different reference vapor deposition temperatures and the actual vapor deposition temperature corresponding to the resistivity, thereby reducing calibration errors and enabling the calibration result to be more accurate.
For the solution shown in fig. 2, in some possible embodiments, the calibrating the thermometer according to the actual vapor deposition temperature corresponding to the resistivity includes:
obtaining a temperature deviation value between the reference vapor deposition temperature and the actual vapor deposition temperature corresponding to the resistivity;
and calibrating the thermometer according to the temperature deviation value.
In some examples, after an epitaxial wafer is prepared at only one reference vapor deposition temperature shown by the thermometer 70 and the resistivity of the epitaxial wafer is obtained, a temperature deviation value between the actual vapor deposition temperature corresponding to the resistivity and the reference vapor deposition temperature can be obtained in the present disclosure, and the thermometer 70 is calibrated according to the temperature deviation value. It will be appreciated that when the reference vapor deposition temperature is less than the actual vapor deposition temperature, the indication corresponding to the thermometer 70 is smaller, so that the calibrated indication of the thermometer 70 is the sum of the value corresponding to the reference vapor deposition temperature and the temperature deviation value, and when the reference vapor deposition temperature is greater than the actual vapor deposition temperature, the indication corresponding to the thermometer 70 is larger, so that the calibrated indication of the thermometer 70 is the difference between the value corresponding to the reference vapor deposition temperature and the temperature deviation value.
In other examples, after preparing a plurality of epitaxial wafers at a plurality of reference vapor deposition temperatures shown by the thermometer 70, the resistivity of the epitaxial wafer prepared at each reference vapor deposition temperature is obtained in a specific implementation process, and then the temperature deviation value is obtained according to the actual vapor deposition temperature corresponding to the resistivity of the epitaxial wafer prepared at each reference vapor deposition temperature and the corresponding reference vapor deposition temperature. It will be appreciated that in this case, the temperature deviation value is plural, and the thermometer 70 is calibrated according to the plural temperature deviation values in the implementation process, specifically, for example, the thermometer 70 is calibrated according to an average value corresponding to the plural temperature deviation values. That is, when the indication corresponding to the thermometer 70 is smaller, the calibrated indication of the thermometer 70 is the sum of the value corresponding to the reference vapor deposition temperature and the average value corresponding to the temperature deviation value, and when the indication corresponding to the thermometer 70 is larger, the calibrated indication of the thermometer 70 is the difference between the value corresponding to the reference vapor deposition temperature and the average value corresponding to the temperature deviation value.
For the above embodiments, in some examples, calibrating the thermometer according to the actual vapor deposition temperature corresponding to the resistivity includes:
fitting to obtain reference curves between the corresponding resistivity of the epitaxial wafers and the corresponding reference vapor deposition temperatures;
fitting to obtain actual curves between the plurality of resistivities and a plurality of corresponding actual vapor deposition temperatures;
And calibrating the thermometer according to the reference curve and the actual curve.
After preparing a corresponding plurality of epitaxial wafers at a plurality of reference vapor deposition temperatures shown by the thermometer 70 and obtaining the resistivity of the epitaxial wafer prepared at each reference vapor deposition temperature, a temperature deviation value is obtained according to the actual vapor deposition temperature corresponding to the resistivity of the epitaxial wafer prepared at each reference vapor deposition temperature and the corresponding reference vapor deposition temperature. It will be appreciated that in this case the temperature deviation value is plural, in order to ensure that the thermometer 70 can be accurately calibrated, in a particular implementation, a corresponding plurality of resistivities of a plurality of epitaxial wafers are fitted to a corresponding plurality of reference vapor deposition temperatures to obtain corresponding reference curves, as shown in particular by the dashed lines in fig. 3. The plurality of resistivities are fitted to the corresponding plurality of actual vapor deposition temperatures to obtain corresponding actual curves, as particularly shown by the solid lines in fig. 3. It will be appreciated that, after the reference curve and the actual curve are obtained, the thermometer 70 can be calibrated according to the offset between the reference curve and the actual curve as the temperature offset value, so that the plurality of reference vapor deposition temperatures shown by the calibrated thermometer 70 can be respectively closer to the corresponding actual vapor deposition temperatures, that is, after the above temperature offset value is obtained, the reference curve and the actual curve are made to be close to coincidence by calibrating the thermometer 70.
For the solution shown in fig. 2, in some examples, the calibration of the above-mentioned thermometer is performed by adjusting the thermal emissivity of the above-mentioned thermometer.
The thermometer 70 is typically a high temperature infrared thermometer. The measurement of the high-temperature infrared thermometer is realized through the relationship between the magnitude of infrared radiation energy and the surface temperature, and the thermal emissivity of the material for manufacturing the high-temperature infrared thermometer can reflect the infrared radiation characteristic of the high-temperature infrared thermometer. Specifically, the relationship between the thermal emissivity E of the high temperature infrared thermometer and the temperature shown by the high temperature infrared thermometer is expressed as e=r/T using a formula, where r represents a constant. Thus, varying the thermal emissivity of the thermometer 70 can show different reference vapor deposition temperatures. Based on this, in the embodiment of the present disclosure, the thermal emissivity of the thermometer 70 is adjusted by adjusting it.
For the solution shown in fig. 2, in some possible embodiments, the thermometer includes a first sub-thermometer disposed above a reaction chamber of the epitaxial furnace and a second sub-thermometer disposed below the reaction chamber, and the method further includes:
after the calibration of the thermometer, a calibration evaluation is performed based on the difference between the reference vapor deposition temperatures respectively shown by the first sub-thermometer and the second sub-thermometer in the vapor deposition reaction.
The calibration of the thermometer 70 according to the foregoing technical solution includes calibration of the first sub-thermometer 701 and the second sub-thermometer 702. When the calibration of the thermometer 70 is completed, the calibration results still need to be evaluated during the implementation. In the present disclosure, the vapor deposition process is continuously performed after the calibration of the thermometer 70, thereby obtaining reference vapor deposition temperatures respectively shown by the first sub-thermometer 701 and the second sub-thermometer 702, and obtaining differences between the reference vapor deposition temperatures respectively shown by the first sub-thermometer 701 and the second sub-thermometer 702, thereby evaluating the calibration result. Specifically, in some examples, the calibration is determined to be complete when the difference is less than or equal to a threshold value, or
And when the difference value is larger than the threshold value, repeating the steps S1 to S3 to continuously calibrate the thermometer.
The threshold may be determined according to the actual situation. For example, in the case where the threshold is 3 ℃, the calibration of the thermometer 70 is characterized as being completed when the above-described difference is less than or equal to 3 ℃. Conversely, when the above difference is greater than 3 ℃, the characterization still requires adjustment of the indication of the thermometer 70 by adjusting the thermal emissivity of the thermometer 70, and the specific method is still performed according to repeatedly performing steps S1 to S3 of the foregoing technical solution.
It should be noted that, when the difference is greater than the threshold, the temperature distribution in the characterization reaction chamber is not uniform, so that a larger temperature distribution difference may exist between the upper reaction chamber and the lower reaction chamber, and heat transfer may occur between the upper reaction chamber RC1 and the lower reaction chamber RC2 in the vapor deposition process, so that the temperature distribution in the upper reaction chamber where the substrate W is located is changed, and finally the preparation process of the epitaxial layer is affected.
For the solution shown in fig. 2, in some possible embodiments, the above-mentioned reference vapor deposition temperature is in the range of 1100 ℃ to 1150 ℃.
In some examples, the plurality of reference vapor deposition temperatures are 1100 ℃,1110 ℃,1120 ℃,1130 ℃,1140 ℃ and 1150 ℃, respectively, when the respective plurality of epitaxial wafers are prepared from the plurality of reference vapor deposition temperatures, respectively. Of course, in the implementation process, the multiple reference vapor deposition temperatures may also be other vapor deposition temperatures respectively in the range of 1100 ℃ to 1150 ℃.
For the solution shown in fig. 2, in some possible embodiments, during the process of preparing each epitaxial wafer of the plurality of epitaxial wafers, the reaction chamber of the epitaxial furnace is filled with the same flow of the doping gas, and the duration of filling the doping gas is the same. Optionally, the flow rate of the doping gas is 220sccm to 240sccm, and the duration of the doping gas is 55s to 70s.
In order to ensure that the thermometer 70 can be accurately calibrated, in a specific implementation process, in a preparation process of each epitaxial wafer in the plurality of epitaxial wafers, the same flow of doping gas is introduced into the reaction chamber, and the duration of the introduction of the doping gas is the same, so that the doping process is performed under the condition that the vapor deposition temperature of each epitaxial wafer is different and other doping conditions are the same, and thus, the consistency of the electrical characteristics and the material quality of the epitaxial layer is improved, and the calibration result of the thermometer 70 is ensured.
The technical schemes described in the embodiments of the present disclosure may be arbitrarily combined without any conflict.
The foregoing is merely specific embodiments of the disclosure, but the protection scope of the disclosure is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the disclosure, and it is intended to cover the scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
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