CN119335502A

CN119335502A - Light detection chips, light emitting chips and lidar

Info

Publication number: CN119335502A
Application number: CN202310891199.0A
Authority: CN
Inventors: 吴攸; 陈垚江; 向少卿
Original assignee: Hesai Technology Co Ltd
Current assignee: Hesai Technology Co Ltd
Priority date: 2023-07-19
Filing date: 2023-07-19
Publication date: 2025-01-21
Also published as: WO2025016449A1

Abstract

The embodiment of the present invention provides a light detection chip, a light emitting chip and a laser radar, wherein the light detection chip includes a first end face, a first main body and a first anti-reflection structure, wherein the first end face is suitable for receiving incident light, including a pixel area and a non-pixel area; the first main body includes: a pixel body area, whose light receiving surface is distributed in the pixel area of the first end face; a non-pixel body area, whose light receiving surface is distributed in the non-pixel area of the first end face; the first anti-reflection structure is arranged in the non-pixel area of the first end face, at least partially covers the light receiving surface of the non-pixel body area, and is suitable for reducing the reflectivity of the non-pixel body area to the incident light. By adopting the above scheme, the light incident to the area covered by the first anti-reflection structure is subjected to anti-reflection treatment, and the reflectivity of the non-pixel body area to the light is reduced, thereby reducing the reflectivity of the light detection chip to the incident light.

Description

Light detection chip, light emitting chip and laser radar

Technical Field

The embodiment of the invention relates to the technical field of laser radars, in particular to a light detection chip, a light emitting chip and a laser radar.

Background

The light detection chip is used for receiving and detecting and analyzing signal light in a laser radar system. Ideally, the light detection chip can completely receive the signal light reflected from the obstacle back to the laser radar, and perform subsequent detection analysis on the received signal light. However, in practical applications, the optical detection chip has a certain reflectivity to the signal light, and part of the signal light reflected from the outside is reflected back to the outside by the optical detection chip.

The signal light reflected to the outside by the light detection chip can reduce the detection precision of the laser radar, which is unfavorable for the detection of the laser radar, so how to provide an improved technical scheme to reduce the reflectivity of the light detection chip becomes a technical problem to be solved by the technicians in the field.

The matters in the background section are only those known to the public and do not, of course, represent prior art in the field.

Disclosure of Invention

In view of the above, the embodiment of the invention provides a light detection chip, a light emitting chip and a laser radar, which can reduce the reflectivity of incident light and improve the detection precision.

First, an embodiment of the present invention provides a light detection chip, including a first end surface, a first main body, and a first antireflection structure, where:

The first end face is suitable for receiving incident light and comprises a pixel area and a non-pixel area;

The first body includes:

The light receiving surface of the pixel body region is distributed in the pixel region of the first end surface;

a non-pixel body region, wherein the light receiving surface of the non-pixel body region is distributed in the non-pixel region of the first end surface;

The first anti-reflection structure is arranged in a non-pixel area of the first end face, at least partially covers a light receiving surface of the non-pixel area, and is suitable for reducing the reflectivity of the non-pixel area to incident light.

Optionally, the first anti-reflection structure includes:

and a first absorption layer adapted to absorb light of a target wavelength band.

Optionally, the first absorbent layer includes:

A photosensitive substrate.

Optionally, the first absorbent layer further comprises:

and the black dye is distributed in the photosensitive substrate.

Optionally, the first anti-reflection structure includes:

The first deflecting structure is suitable for deflecting light incident thereon.

Optionally, the non-pixel body region includes a metal filling structure;

The first deflecting structure adapted to pass at least a portion of light incident thereon through the gap of the metal filling structure;

and/or the number of the groups of groups,

The first deflecting structure is adapted to change the wavefront shape of light incident thereon.

Optionally, the first deflecting structure comprises a micro-nano optical structure.

Optionally, the micro-nano optical structure comprises a plurality of micro-nano optical units, wherein each micro-nano optical unit comprises at least one of the following arrangement modes:

Periodically arranging;

and (5) randomly arranging.

Optionally, the periodic arrangement includes at least one of:

uniformly and periodically arranging;

the non-uniform periodic arrangement.

Optionally, the plurality of micro-nano optical units have the same or different dimensions.

Optionally, the micro-nano optical structure comprises at least one of:

A microlens array structure;

A super surface structure;

a fresnel zone plate structure;

A conical structure;

and a grating structure.

Optionally, the first deflecting structure is adapted to cause light incident thereon to be directionally reflected.

Optionally, the first anti-reflection structure further comprises:

The anti-reflection layer is arranged in the non-pixel area of the first end face and is suitable for reducing the reflectivity of the light receiving surface of the non-pixel area to the light of the target wave band.

Optionally, the anti-reflection layer is adapted to reduce sensitivity of reflectivity of the light receiving surface of the non-pixel body region to an incident angle of light.

Optionally, the anti-reflection layer includes:

A film structure composed of a plurality of sub anti-reflection layers.

Optionally, the pixel body region includes:

a plurality of light detection units, the light sensitive surfaces of which are distributed in the pixel area of the first end surface;

The first anti-reflection structure is also arranged in the pixel area, at least partially covers the area between the light sensitive surfaces of the plurality of light detection units, and is suitable for reducing the reflectivity of the pixel area to incident light.

Optionally, the pixel body region comprises a plurality of light detection units, a plurality of light detection units and a plurality of light detection units, wherein the light sensitive surfaces of the light detection units are distributed in the pixel region of the first end surface;

the first anti-reflection structure further comprises a second deflection structure, and the second deflection structure is arranged in the pixel area and at least partially covers the photosensitive surfaces of the plurality of light detection units.

Optionally, the second deflecting structure is adapted to increase the absorptivity of the first body to light;

and/or the number of the groups of groups,

The second deflecting structure is adapted to change the wavefront shape of light incident on the second deflecting structure.

Optionally, the second deflecting structure includes:

Micro-nano optical structure.

Periodically arranging;

and (5) randomly arranging.

Optionally, the periodic arrangement includes at least one of:

uniformly and periodically arranging;

the non-uniform periodic arrangement.

Optionally, the micro-nano optical structure comprises at least one of:

A microlens array structure;

A super surface structure;

a fresnel zone plate structure;

A conical structure;

and a grating structure.

The light detection unit includes at least one of:

A single photon avalanche diode;

A silicon photomultiplier;

Avalanche photodiodes.

The embodiment of the invention also provides a light-emitting chip, which comprises a second end face, a second main body and a second anti-reflection structure, wherein:

the second end face is suitable for emitting detection light and comprises an emitting area and a non-emitting area;

The second body includes:

The light receiving surface of the emitter region is distributed in the emitting region of the second end surface;

A non-emitter region, the light receiving surface of which is distributed in the non-emission region of the second end surface;

The second anti-reflection structure is arranged in a non-emission area of the second end face, at least partially covers a light receiving surface of the non-emission area and is suitable for reducing the reflectivity of the non-emission area to light.

Optionally, the second anti-reflection structure includes:

and a second absorption layer adapted to absorb light of the target wavelength band.

Optionally, the second absorbing layer comprises a photosensitive substrate.

Optionally, the second absorbing layer includes a black dye distributed within the photosensitive substrate.

Optionally, the emitter region comprises a plurality of light emitting units, wherein the light emitting surfaces of the light emitting units are distributed in the emitting region of the second end surface;

The second anti-reflection structure is further arranged in the emission area, at least partially covers the area between the light emitting surfaces of the plurality of light emitting units, and is suitable for reducing the reflectivity of the emitter area to incident light.

The embodiment of the invention also provides a laser radar, which comprises:

The laser is suitable for transmitting detection signals of a target wave band to the outside;

the detector is suitable for receiving an echo signal returned after the detection signal is reflected by the obstacle;

The processor is suitable for determining the distance information of the external obstacle according to the detection signal and the echo signal;

Wherein:

the detector comprises the light detection chip according to any of the previous embodiments, and/or,

The laser comprises the light emitting chip of any embodiment.

Optionally, the laser radar further comprises:

A housing;

and the absorber is arranged inside the shell and is suitable for absorbing echo signals and/or detection signals reflected to the inside of the shell by the detector and/or the laser.

By adopting the light detection chip provided by the embodiment of the invention, the first anti-reflection structure is arranged in the non-pixel area of the first end surface and at least partially covers the light receiving surface of the non-pixel area of the first main body, so that the first anti-reflection structure can perform anti-reflection treatment on light entering the coverage area of the first anti-reflection structure, the reflection quantity of the coverage area of the first anti-reflection structure on the incident light is reduced, the reflectivity of the non-pixel area on the light is reduced, and the reflectivity of the light detection chip on the incident light is reduced.

Further, the first anti-reflection structure may include a first absorption layer adapted to absorb light of a target wavelength band, and when incident light is incident on or reflected to the outside through an area covered by the first absorption layer, the incident light is absorbed by the first absorption layer on an incident or reflection path thereof. The first absorption layer can reduce the reflection quantity of the coverage area of the first absorption layer on incident light by absorbing light passing through the coverage area of the first absorption layer, so that the reflectivity of the non-pixel body area on the incident light can be reduced, and the reflectivity of the light detection chip on the incident light can be further reduced. In addition, because the first absorption layer is arranged in the non-pixel area of the first end face, the influence of factors such as water vapor, dirt and the like in the working environment on the light detection chip can be blocked, and the reliability of the light detection chip is improved.

Further, the first absorption layer may include a photosensitive substrate, and the photosensitive substrate may be directly manufactured and integrated on the surface of the light detection chip through a semiconductor process, so that the process difficulty may be reduced, and the method has the characteristic of easy implementation.

Further, as the black dye has light absorption characteristics, the absorption rate of the first absorption layer to light can be improved by the black dye distributed in the photosensitive substrate, so that the reflectivity of the non-pixel body area to light can be reduced, and the reflectivity of the light detection chip to incident light can be reduced.

Further, at least part of the light incident on the first deflection structure passes through the gaps of the metal filling structures in the non-pixel body region, so that the part of the light can propagate in the non-pixel body region, the absorption rate of the non-pixel body region to the incident light can be increased by increasing the optical path of the incident light in the non-pixel body region, the probability of direct reflection of the incident light by the metal filling structures is also reduced, and the reflectivity of the non-pixel region to the incident light can be effectively reduced, so that the reflectivity of the light detection chip to the incident light is reduced. And the wave front shape of the light incident on the first deflection structure is changed, so that the reflection direction of the reflected light can be controlled, the light quantity in the original reflection angle range of the reflected light of the non-pixel area can be reduced, the ratio of the light quantity reflected to the original reflection angle range of the non-pixel area to the incident light quantity can be reduced, and the reflectivity of the non-pixel area to the incident light in a specific direction can be reduced.

Further, by setting the first deflecting structure to be a micro-nano optical structure, the first deflecting structure can deflect the incident light in the coverage area of the first deflecting structure at the level of nanometer to micrometer, so that the accuracy and reliability of the processing result can be improved.

Further, through the plurality of micro-nano optical units, light incident to different positions in the non-pixel area can be uniformly or independently adjusted, so that accurate control of smaller dimensions in the non-pixel area can be realized, the optical performance of the micro-nano optical structure can be optimized, and the accuracy and adjustability of the micro-nano optical structure are further improved.

Furthermore, the plurality of micro-nano optical units which are arranged periodically are convenient for mass production, and meanwhile, the optical response of the plurality of micro-nano optical units which are arranged periodically has the characteristics of periodicity and regularity, and the transmission and absorption conditions of light in a target wave band in the non-pixel body region can be selectively modulated by regulating the corresponding period, shape and other parameters, so that the reflectivity of the non-pixel body region to incident light is changed. The optical response of the micro-nano optical units which are arranged randomly has nonlinear characteristics, and can increase the wave band range of light absorbed by the non-pixel body region, so that the absorption rate of the non-pixel body region to the incident light can be improved, and the reflectivity of the non-pixel body region to the incident light can be reduced.

Further, the first deflecting structure is used for directionally reflecting the light incident on the non-pixel area, so that the quantity of the light reflected to the original reflecting angle range by the non-pixel area can be reduced, the ratio of the quantity of the light reflected to the original reflecting angle range by the non-pixel area to the quantity of the incident light can be reduced, and the reflectivity of the non-pixel area to the incident light in a specific direction can be reduced.

Further, the transmittance of the light of the target wave Duan Rushe can be increased by the anti-reflection layer arranged in the non-pixel area of the first end face, so that more incident light can act with other anti-reflection structures in the first anti-reflection structure, and the reflectivity of the coverage area of the anti-reflection layer to the light of the target wave band is reduced.

Further, the sensitivity of the reflectivity of the light receiving surface of the non-pixel body region to the incident angle of the light is reduced by the anti-reflection layer, so that the critical value corresponding to the incident angle entering the non-pixel region can be increased, the transmissivity of the light rays with different incident angles can be increased, and the reflectivity of the non-pixel body region to the incident light can be reduced.

By adopting the light emitting chip provided by the embodiment of the invention, the second anti-reflection structure is arranged in the non-emission area of the second end surface and at least partially covers the light receiving surface of the non-emission area of the second main body, so that the second anti-reflection structure can perform anti-reflection treatment on the detection light entering the coverage area of the second anti-reflection structure, and the reflection quantity of the coverage area on the detection light is reduced, thereby reducing the reflectivity of the non-emission area to light and further reducing the reflectivity of the light emitting chip to the incident light.

The laser radar provided by the embodiment of the invention can comprise a laser, a detector and a processor, wherein the detector adopts the light detection chip in any embodiment, so that the reflectivity of the detector to echo signals is reduced, the interference of the echo signals caused by reflection can be reduced, and the detection precision of the laser radar can be improved, and/or the laser adopts the light emitting chip in any embodiment, so that the reflectivity of the laser to detection signals is reduced, the interference caused by reflection in the propagation process of the detection signals can be reduced, and the detection precision of the laser radar can be improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present description, the drawings that are required to be used in the embodiments of the present description or the description of the prior art will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present description, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 shows a schematic diagram of a double-distance ghost image principle;

FIG. 2A is a schematic diagram showing a structure of a light detecting chip;

FIG. 2B shows a top view of the light detection chip structure of FIG. 2A;

FIG. 3 is a schematic diagram showing a structure of a light detecting chip according to an embodiment of the present invention;

FIG. 4 is a schematic diagram showing a distribution of a metal filling structure in an embodiment of the present invention;

FIG. 5 is a schematic diagram showing a distribution of a light detecting photosensitive array according to an embodiment of the present invention;

FIG. 6 is a schematic diagram showing the structure of another optical detection chip in an embodiment of the present invention;

FIG. 7 is a schematic diagram showing the structure of another optical detection chip in an embodiment of the present invention;

Fig. 8A is a schematic view showing a propagation path of incident light when a microlens array structure is not provided in a non-pixel region in an embodiment of the present invention;

fig. 8B is a schematic view showing a propagation path of incident light when a non-pixel region is provided with a microlens array structure in an embodiment of the present invention;

FIGS. 9A and 9B are schematic diagrams showing structures of various light detecting chips according to embodiments of the present invention;

FIGS. 10A to 10C are schematic diagrams showing structures of various light detecting chips according to embodiments of the present invention;

FIG. 11 is a schematic diagram showing the structure of another optical detection chip in an embodiment of the present invention;

FIG. 12 is a schematic diagram showing the structure of another optical detection chip in an embodiment of the present invention;

fig. 13A is a schematic view showing a propagation path of incident light when a microlens array structure is not provided in a pixel region in an embodiment of the present invention;

Fig. 13B is a schematic view showing a propagation path of incident light when a microlens array structure is provided in a pixel region in an embodiment of the present invention;

FIG. 14 shows another two-fold ghost principle schematic;

fig. 15A shows a schematic structural view of a light emitting chip in an embodiment of the present invention;

FIG. 15B illustrates a top view of the light emitting chip structure illustrated in FIG. 15A;

FIG. 16 shows a top view of another light emitting chip in an embodiment of the invention;

fig. 17 shows a schematic structural diagram of a lidar according to an embodiment of the present invention.

Detailed Description

As described in the background art, in a practical situation, the optical detection chip has a certain reflectivity to the signal light, and in the signal light reflected from the outside, a part of the signal light exists and is reflected back to the outside by the optical detection chip, and the signal light reflected back to the outside by the optical detection chip can reduce the detection accuracy of the laser radar, which is not beneficial to the detection of the laser radar. For example, an excessively high reflectance of the light detection chip may cause an excessively small amount of signal light received by the light detection chip, thereby causing an excessively small detection analysis sample to be detected, and degrading detection accuracy. For example, if the signal light reflected back to the outside by the light detection chip is reflected back to the light detection chip again by the obstacle and is absorbed again by the light detection chip, multiple distance ghost images are formed, and the detection accuracy is reduced.

Referring to fig. 1, fig. 1 shows a schematic diagram Of a double-distance ghost image principle, where the laser radar L0 includes a transmitting end L01 and a receiving end L02, where the transmitting end L01 transmits a detection signal S1, and forms an echo signal H1 after being reflected by an obstacle C0, where the echo signal H1 is accepted by a light detection chip Of the receiving end L02, and if the surface Of the light detection chip is relatively flat and has strong specular reflection, a part Of the echo signal H2 will be reflected by the light detection chip and reach the obstacle C0 again, so that an echo signal H3 is detected by the light detection chip Of the receiving end L02 again, and the Time Of Flight (Time Of Flight, TOF) Of the echo signal H3 is approximately equal to two times Of the echo signal H1, which will cause a double-distance ghost image to appear at a distance twice the actual distance Of the obstacle C0 in the detection result, thereby reducing the detection accuracy Of the laser radar.

Therefore, how to provide an improved technical solution to reduce the reflectivity of the light detection chip becomes a technical problem to be solved by those skilled in the art. In research and experiments on how to reduce the reflectivity of the light detection chip, the inventors found that there are different reflectivities at different locations of the light detection chip, based on the differences in structure and materials.

For example, referring to fig. 2A and 2B in combination, fig. 2A shows a schematic diagram of a structure using a light detection chip, and fig. 2B shows a top view of the structure of the light detection chip in fig. 2A. The light detection chip 10 includes a first end surface D1, a pixel body region 11 and a non-pixel body region 12, wherein a light detection photosensitive array 111 is disposed in the pixel body region 11, the light detection photosensitive array 111 can receive and detect signal light, a Dummy Metal (DM) array structure 121 is disposed in the non-pixel body region 12, and the Dummy Metal array structure 121 can ensure feasibility of chip design in terms of physical, manufacturing and process requirements, and the Dummy Metal array structure 121 is disposed at the periphery of the pixel body region 11. The first end surface D1 includes a pixel region D11 and a non-pixel region D12, the light receiving surface of the pixel body region 11 is distributed in the pixel region D11, and the light receiving surface of the non-pixel body region 12 is distributed in the non-pixel region D12. The light detection photosensitive array 111 in the pixel body region 11 has a high absorption rate for light incident on the light receiving surface thereof, so that the reflectivity of the pixel body region 11 for light is low, while the absorptivity of the metal material constituting the dummy metal array structure 121 for light is low, so that the reflectivity of the non-pixel body region D12 for light is high.

As can be seen from the foregoing, the reflectivity of the non-pixel region to light is high, and the light incident on the non-pixel region cannot be sensed and utilized by the light detection chip, and based on this, the inventors selected an angle that reduces the reflectivity of the non-pixel region to light, and reduced the reflectivity of the light detection chip.

In order to solve the above technical problems, an embodiment of the present invention provides a light detection chip, in which a first anti-reflection structure is disposed in a non-pixel area, and the first anti-reflection structure at least partially covers a light receiving surface of a non-pixel area, and light incident to the light receiving surface is subjected to anti-reflection treatment by the first anti-reflection structure, so that the reflectivity of the non-pixel area to light can be reduced, and therefore, the reflectivity of the light detection chip to light can be reduced, and the detection precision can be improved.

In order to better understand the inventive concept, working principle and advantages of the embodiments of the present invention, the following respectively explain the structure of the light detection chip in the embodiments of the present invention.

In some embodiments of the present invention, referring to a schematic structural diagram of a light detection chip in the embodiment of the present invention shown in fig. 3, the light detection chip may include a first end surface, a first body, and a first anti-reflection structure 23, wherein:

The first end face is adapted to receive incident light and may include a pixel region D11 and a non-pixel region D12;

The first body may include a pixel body region 21 having a light receiving surface distributed in the pixel region D11 and a non-pixel body region 22 having a light receiving surface distributed in the non-pixel region D12;

the first anti-reflection structure 23 is disposed in the non-pixel region D12 and at least partially covers the light receiving surface of the non-pixel region 22, and is adapted to reduce the reflectivity of the non-pixel region 22 to the incident light.

By adopting the technical scheme, the first anti-reflection structure is arranged in the non-pixel area of the first end face and at least partially covers the light receiving surface of the non-pixel area of the first main body, so that the first anti-reflection structure can perform anti-reflection treatment on light entering the coverage area of the first anti-reflection structure, the reflection quantity of the coverage area of the first anti-reflection structure on the incident light is reduced, the reflectivity of the non-pixel area on the light can be reduced, and the reflectivity of the light detection chip on the incident light can be reduced.

In a specific implementation, the non-pixel body region may include a metal filling structure, wherein the metal filling structure may include a plurality of metal filling units distributed at intervals.

As an alternative example, referring to the schematic distribution manner of the metal filling structure in the non-pixel body area shown in fig. 4, the plurality of metal filling units 221e in the metal filling structure 221 may be distributed in a three-dimensional stacked manner in the non-pixel body area 22, and specifically, the plurality of metal filling units 221e may be distributed at intervals along the X-axis and the Y-axis directions, and may also be distributed at intervals along the Z-axis direction. When incident light is incident on the light-receiving surface of the metal filling unit distributed in the non-pixel region D12, the incident light is reflected.

In implementations, the pixel body region may include a light detecting photosensitive array. The light detection photosensitive array may include a plurality of light detection units, and photosensitive surfaces of the plurality of light detection units are distributed in a pixel area of the first end surface.

As an alternative example, referring to the schematic diagram of the distribution manner of the light detection photosensitive array in the pixel body area shown in fig. 5, the light detection photosensitive array 211 is disposed in the pixel body area 21, and the photosensitive surfaces of the plurality of light detection units 211e distributed on the pixel area D11 are distributed in a periodic array. When incident light is incident on the photosensitive surface of the light detection unit in the pixel area, the incident light enters the pixel body area to propagate and be absorbed by the pixel body area.

In a specific implementation, the specific type of the light detection unit may be selected according to the specific situation. For example, the light detection unit may be one or more of a single photon avalanche diode (Single Photon Avalanche Diode, SPAD), a silicon photomultiplier (Silicon Photo Multipliers, siPM), or an avalanche photodiode (AVALANCHE PHOTO DIODE, APD).

In implementations, a plurality of first anti-reflective structures may be employed to reduce the reflectivity of the non-pixel body region to incident light.

In some embodiments of the present invention, the first anti-reflection layer may include a first absorption layer adapted to absorb light of a target wavelength band. In view of the micro-nano application scenario, the first absorption layer may comprise a photosensitive substrate. As an alternative example, the photosensitive substrate may be a resin substrate. Specifically, the resin substrate is similar to photoresist, can be directly manufactured and integrated on the surface of the light detection chip through a semiconductor process, and has the characteristics of low process difficulty and easiness in implementation.

Depending on the use scenario, different types of resin substrates may be employed. For example, when the resin substrate is applied to the field of laser radar, considering that the corresponding wavelength band of the detection light of the laser radar is generally 900-1000 nm, one or more of a photosensitive resin substrate or an infrared absorption resin substrate can be adopted as the resin substrate, and the photosensitive resin substrate or the infrared absorption resin substrate can effectively absorb the light in the target wavelength band.

In a specific implementation, the first absorbing layer may further include a black dye distributed in the photosensitive substrate. The black dye can effectively absorb visible light and improve the light absorption rate of the first absorption layer, so that the light reflectivity of the non-pixel body area can be reduced.

As an alternative example, the black dye may include one or more of a black organic dye (e.g., a black perylene-based dye, a black fluorene-based dye, etc.) or a black inorganic dye (e.g., a nano carbon black, etc.).

In order to better understand the inventive concept, working principle and advantages of the embodiments of the present invention, a light detection chip in the embodiments of the present invention is explained below.

As an alternative example, referring to the schematic structural diagram of a light detection chip in the embodiment of the present invention shown in fig. 6, the light detection chip 20 includes a first end face, a first main body, and a first anti-reflection structure, where the first end face is adapted to receive incident light, the first end face includes a pixel area D11 and a non-pixel area D12, the first main body includes a pixel body area 21 with a light receiving surface distributed in the pixel area D11 and a non-pixel area 22 with a light receiving surface distributed in the non-pixel area D12, the first anti-reflection structure is disposed in the non-pixel area D12 and covers the light receiving surface of the non-pixel area 22, the first anti-reflection structure includes a first absorption layer 231, and the first absorption layer 231 includes a resin substrate and a black inorganic dye distributed in the resin substrate.

The first anti-reflection structure may include a first absorption layer adapted to absorb light of a target wavelength band, and incident light is absorbed by the first absorption layer on its incident or reflection path when the incident light is incident on or reflected from the region covered by the first absorption layer to the outside. The first absorption layer can reduce the reflection quantity of the coverage area of the first absorption layer on incident light by absorbing light passing through the coverage area of the first absorption layer, so that the reflectivity of the non-pixel body area on the incident light can be reduced, and the reflectivity of the light detection chip on the incident light can be further reduced.

In addition, because the first absorption layer is arranged in the non-pixel area of the first end face, the influence of factors such as water vapor, dirt and the like in the working environment on the light detection chip can be blocked, and the reliability of the light detection chip is improved.

In other embodiments of the present invention, the first anti-reflective layer may include a first deflecting structure that deflects light incident thereon. The reflectivity of the non-pixel region to the incident light can be reduced by deflecting the light incident thereon by the first deflecting structure.

It is understood that the meaning of the reflectivity of the non-pixel region to the incident light is not limited to include a ratio of an amount of light reflected to the outside through the non-pixel region to an amount of the incident light, but may include a ratio of an amount of light reflected to a target direction through the non-pixel region to an amount of the incident light.

In a specific implementation, the first deflecting structure may reduce the reflectivity of the non-pixel region for the incident light in one or more of the following deflecting manners.

As an alternative example, at least part of the light incident thereon may be passed through the gaps of the metal filling structures in the non-pixel body region by the first deflecting structure.

Since the first deflecting structure can make part of light incident thereon pass through the gap of the metal filling structure in the non-pixel body region, so that the part of light can propagate in the non-pixel body region without being directly reflected to the outside of the chip by the metal filling structure, the optical path of the part of light in the non-pixel body region can be increased, so that most of the part of light can be absorbed by the non-pixel body region, the absorptivity of the non-pixel body region to the incident light can be increased, and the reflectivity of the non-pixel body region to the incident light can be reduced.

As another alternative example, the wavefront shape of the light incident on the first deflecting structure may be changed by the first deflecting structure.

The direction of reflection of the reflected light can be controlled by changing the wavefront shape of the light incident thereon by the first deflecting structure. Changing the wavefront shape of light may reduce the amount of light reflected by the non-pixel region to the target direction compared to light originally collimated to the specific (e.g., obstacle) direction, thereby reducing the ratio of the amount of light reflected by the non-pixel region to the amount of incident light, and thus reducing the reflectivity of the non-pixel region to the incident light in the specific direction.

In a specific implementation, the first deflecting structure may include a micro-nano optical structure.

The micro-nano optical structure refers to an optical structure with a characteristic dimension in a nano-to-micro level, has the capability of changing the travelling path of light rays incident on the surface of the optical structure through refraction, scattering or diffraction effects, and can be used for carrying out deflection treatment on the incident light of a coverage area of the optical structure in the nano-to-micro level, so that the accuracy and the reliability of treatment results can be improved.

In a specific implementation, the micro-nano optical structure corresponding to the first deflection structure may include a plurality of micro-nano optical units.

The light incident to different positions in the non-pixel area can be uniformly or independently adjusted through the micro-nano optical units, so that the accurate control of smaller dimensions in the non-pixel area can be realized, the optical performance of the micro-nano optical structure can be optimized, and the accuracy and adjustability of the micro-nano optical structure are further improved.

In an implementation manner, the distribution manner of the plurality of micro-nano optical units corresponding to the first deflection structure on the non-pixel area of the first end surface may adopt one or more of periodic arrangement or random arrangement. In particular, the periodic arrangement may include a uniform periodic arrangement or a non-uniform periodic arrangement.

The plurality of micro-nano optical units which are arranged periodically are convenient for mass production, and meanwhile, the optical response of the plurality of micro-nano optical units which are arranged periodically has the characteristics of periodicity and regularity, and the transmission and absorption conditions of light in a target wave band in the non-pixel body region can be selectively modulated by regulating the corresponding parameters such as the period, the shape and the like, so that the reflectivity of the non-pixel body region to incident light is changed. The optical response of the micro-nano optical units which are arranged randomly has nonlinear characteristics, and can increase the wave band range of light absorbed by the non-pixel body region, so that the absorption rate of the non-pixel body region to the incident light can be improved, and the reflectivity of the non-pixel body region to the incident light can be reduced.

In a specific implementation, the micro-nano optical units corresponding to the first deflecting structure may have the same or different dimensions.

In a specific implementation, the micro-nano optical structure corresponding to the first deflecting structure may be implemented by one or more structures, for example, one or more of a micro-lens array structure, a super-surface structure, a fresnel zone plate structure, a cone structure, a grating structure, and the like.

In order to better understand the inventive concept, working principle and advantages of the embodiments of the present invention, another optical detection chip in the embodiments of the present invention is explained below.

As an alternative example, referring to the schematic structural diagram of a light detection chip in the embodiment of the present invention shown in fig. 7, the light detection chip structure is different from that shown in fig. 6 in that the first anti-reflection structure includes a microlens array structure 232 including a plurality of microlens units 232e, where the microlens units 232e are convex lenses.

Referring to fig. 8A, a schematic diagram of a propagation path of incident light when the microlens array structure is not provided in the non-pixel region, it is assumed that the incident light is reflected by the light receiving surface of the metal filling unit 221e on the non-pixel region D12 and returns along the original path when the incident light is perpendicularly incident on the light receiving surface of the metal filling unit 221e in the non-pixel body region 22.

Referring to fig. 8B, a schematic diagram of a propagation path of incident light when the non-pixel area is provided with a microlens array structure is shown, assuming that the incident light is collimated and incident on the light receiving surface of the metal filling unit 221e in the non-pixel area D12, the incident light will first enter the microlens unit 232e, and besides a part of the light reflected by the microlens unit 232e, by designing relevant parameters of the microlens unit, the rest of the light can enter the non-pixel area 22 through the gaps between the metal filling units 221e after being refracted, and propagate into the non-pixel area 22, and when propagating into the metal filling unit 221e in the non-pixel area 22, the incident light can be repeatedly reflected in the non-pixel area 22, so that the part of the light can be further absorbed by the non-pixel area 22.

The optical path of the part of light in the non-pixel body region can be increased, so that most of the light in the part of light can be absorbed by the non-pixel body region, the absorptivity of the non-pixel body region to the incident light is increased, and the reflectivity of the non-pixel region to the incident light can be reduced.

With continued reference to fig. 8B, since the microlens unit 232e is a convex lens, the curvatures of the convex surfaces of the microlens unit 232e at different positions are different, and the angles at which light incident on the surfaces thereof is reflected are different, the microlens unit 232e can change the wavefront shape of a portion of light reflected thereby, so that the reflection angle range of reflected light is increased. The microlens unit may further reduce the amount of light reflected by the non-pixel body region into the primary collimation direction, compared to the collimated and reflected light, so that the ratio of the amount of light reflected by the non-pixel region into the collimation direction to the amount of incident light may be reduced.

In addition, the distribution of the microlens array structure over the non-pixel region may employ one or more of uniform periodic arrangement, non-uniform periodic arrangement, or random arrangement, and the size of each microlens unit may or may not be uniform.

Specifically, the distribution manner of the microlens array structure on the non-pixel area and the size of each microlens unit may be designed according to the distribution of the light receiving surface of the metal filling structure in the non-pixel area, so that as many light rays as possible can pass through the gaps between the metal filling units after being refracted by the microlens array structure, enter the non-pixel area, propagate, and are finally absorbed by the non-pixel area.

It is understood that the above-mentioned distribution manner of the microlens array structure on the non-pixel region is only illustrative, and the distribution manner of other micro-nano optical structures (such as a super surface structure, a fresnel zone plate structure, a cone structure, a grating structure, etc.) on the non-pixel region and the size of each micro-nano optical unit may also be designed according to the distribution of the light receiving surface of the metal filling structure in the non-pixel region.

In particular implementations, light incident thereon may be directionally reflected by the first deflecting structure. The first deflection structure is used for carrying out directional reflection on the light incident on the non-pixel area, so that the quantity of the light reflected to the specific direction by the non-pixel area can be reduced, the ratio of the quantity of the light reflected to the specific direction by the non-pixel area to the quantity of the incident light can be reduced, and the reflectivity of the non-pixel area to the incident light in the specific direction can be reduced.

In a specific implementation, the specific structure of the first deflection structure may be determined according to the specific situation. As an alternative example, the first deflecting structure may comprise a supersurface structure provided with a grating structure, a plurality of supersurface elements.

In particular, the directional reflection may include reflection toward any one or more directions other than a particular direction.

In still other embodiments of the present invention, the first anti-reflection layer may include an anti-reflection layer, and the anti-reflection layer is disposed in the non-pixel area of the first end surface, and may reduce the reflectivity of the light receiving surface of the non-pixel area to the light of the target band.

Specifically, the anti-reflection layer disposed in the non-pixel area of the first end surface can increase the transmittance of the light of the target wave Duan Rushe, so that more incident light can act with other anti-reflection structures in the first anti-reflection structure, and the reflectivity of the coverage area of the anti-reflection layer to the light of the target wave band is reduced.

In a specific implementation, the anti-reflection layer may further reduce sensitivity of reflectivity of the light receiving surface of the non-pixel body region to an incident angle of light. The anti-reflection layer can increase the critical value corresponding to the incidence angle entering the non-pixel region by reducing the sensitivity of the reflectivity of the light receiving surface of the non-pixel region to the incidence angle of light, so that the transmissivity of light rays with different incidence angles can be increased, and the reflectivity of the non-pixel region to the incidence light can be reduced.

As an alternative example, the reflection-preventing layer may reduce sensitivity of the reflectivity of the light-receiving surface of the non-pixel body region to the incident angle of light by a film system structure composed of a plurality of sub-reflection-preventing layers. Specifically, the anti-reflection layer can be made to be less sensitive to the change of the incident angle within a certain range by selecting proper material combinations and layer thicknesses for each sub-anti-reflection layer. For example, a film-based structure composed of multiple sub-antireflection layers of graded index design may be employed.

It should be noted that the anti-reflection layer may be used in combination with the first absorption layer and the first deflection structure disposed in the non-pixel region, respectively.

In some embodiments of the present invention, referring to the schematic structural diagram of a light detection chip in the embodiment of the present invention shown in fig. 9A, the difference between the structure of the light detection chip and the structure of the light detection chip shown in fig. 6 is that the first anti-reflection structure further includes an anti-reflection layer 233 in addition to the first absorption layer 231, and the anti-reflection layer 233 is disposed on an end surface of the first absorption layer 231 facing away from the non-pixel body region 22. The anti-reflection layer comprises a film system structure formed by a plurality of sub-anti-reflection layers designed by adopting gradient refractive indexes.

The light-receiving surface side of the non-pixel body area is covered with an anti-reflection layer, and incident light passes through the anti-reflection layer in the process of entering the light-receiving surface and being reflected by the light-receiving surface to the outside. The anti-reflection layer can increase the transmittance of the light of the target wave Duan Rushe, so that more incident light can act with the first absorption layer, and the reflectivity of the light receiving surface of the non-pixel body area to the incident light of the target wave band can be further reduced. Meanwhile, the anti-reflection layer is of a film system structure formed by a plurality of sub-anti-reflection layers designed by gradient refractive indexes, so that the sensitivity of the reflectivity of the first absorption layer to the incident angle of light can be reduced, the critical value corresponding to the incident angle entering the non-pixel area can be increased, the transmissivity of light rays with different incident angles can be increased, and the reflectivity of the non-pixel area to the incident light can be further reduced.

As an alternative implementation manner, referring to the schematic structural diagram of another light detection chip in the embodiment of the present invention shown in fig. 9B, the difference between the structure of the light detection chip and the structure of the light detection chip shown in fig. 9A is that the anti-reflection layer 233 may be disposed not only on the end surface of the first absorption layer 231 facing away from the non-pixel body area 22, but also on the light receiving surface side of the pixel body area 21.

The light receiving surface side of the pixel body region is covered with an anti-reflection layer, and the anti-reflection layer can increase the transmittance of light of the target wave Duan Rushe, so that more incident light can enter the pixel body region and be absorbed by the pixel body region, the absorption rate and the detection efficiency of the pixel body region on the incident light are improved, and the reflectivity of the light detection chip on the incident light of the target wave band can be further reduced.

In other embodiments of the present invention, a schematic structure of a light detecting chip according to an embodiment of the present invention shown in fig. 10A is different from the structure of the light detecting chip shown in fig. 7 in that the first anti-reflection structure further includes an anti-reflection layer 233 disposed between the micro lens array structure 232 and the non-pixel body region 22 in addition to the micro lens array structure 232. The anti-reflection layer 233 comprises a film structure formed by a plurality of sub-anti-reflection layers designed by gradient refractive index.

As an alternative example, referring to the schematic structural diagram of another light detecting chip in the embodiment of the present invention shown in fig. 10B, the difference between the structure of the light detecting chip and the structure of the light detecting chip shown in fig. 7 is that the first anti-reflection structure further includes an anti-reflection layer 233, which is disposed on an end surface of the micro lens array structure 232 facing away from the non-pixel body region 22, in addition to the micro lens array structure 232.

As another alternative example, referring to the schematic structural diagram of another light detection chip in the embodiment of the present invention shown in fig. 10C, the difference between the structure of the light detection chip and the structure of the light detection chip shown in fig. 10B is that the anti-reflection layer 233 may be disposed not only on the end surface of the microlens array structure 232 facing away from the non-pixel body region 22, but also on the light receiving surface side of the pixel body region 21.

In the chip design, the isolation grooves between adjacent light detection units are also distributed with light receiving surfaces on the pixel areas, the light receiving surfaces are distributed in areas between the light receiving surfaces of the light detection units, light rays entering the areas cannot enter the light detection units, and the light receiving surfaces have higher reflectivity to the incident light based on the material characteristics of the isolation grooves.

In order to solve the above-mentioned problem, in a specific implementation, the first anti-reflection structure may be further disposed in the pixel area, at least partially covering an area between the light sensing surfaces of the plurality of light detection units, and adapted to reduce the reflectivity of the pixel body area to the incident light.

As an alternative example, referring to a schematic structural diagram of a light detection chip in the embodiment of the present invention shown in fig. 11, a pixel body region of the light detection chip is shown to include a light detection photosensitive array 211 and an isolation trench 212, where the light detection photosensitive array 211 includes a plurality of light detection units 211e, adjacent light detection units 211e are isolated by the isolation trench 212, and a pixel region includes a light sensing surface of the light detection unit and a light receiving surface of the isolation trench 212. The difference from the structure of the light detecting chip shown in fig. 6 is that the first absorption layer 231 in this example is disposed on the light receiving surface of the isolation trench 212 and the non-pixel region D12.

The first absorption layer can effectively absorb the incident light based on the light absorption characteristic of the first absorption layer, so that the quantity of light reflected to the outside by the light receiving surface is reduced, and the reflectivity of the pixel body region to the light can be reduced.

In specific implementation, the reflectivity corresponding to the photosensitive surface of the light detection chip can be optimized, and the reflectivity of the light detection chip to incident light can be further reduced.

In a specific implementation, the first anti-reflection structure further includes a second deflection structure, where the second deflection structure is disposed in the pixel area and at least partially covers the light-sensitive surfaces of the plurality of light detection units, and is adapted to reduce the reflectivity of the light detection chip to incident light.

It is understood that the meaning of the reflectivity of the light detection chip to the incident light is not limited to include a ratio of the amount of light reflected to the outside through the light detection chip to the amount of incident light, but may include a ratio of the amount of light reflected to the target direction through the light detection chip to the amount of incident light.

Specifically, the second deflecting structure may reduce the reflectivity of the light detection chip to the incident light in various ways.

As an alternative example, the second deflecting structure may reduce the reflectivity of the light detection chip by increasing the absorptivity of the first body to light.

The second deflection structure increases the absorptivity of the first main body to the incident light, so that the quantity of the light reflected to the outside by the pixel area can be reduced, the quantity of the light reflected to the outside by the light detection chip is reduced, and the reflectivity of the light detection chip can be reduced.

As another alternative example, the second deflecting structure may reduce the reflectivity of the pixel region by changing the wavefront shape of the light incident on the second deflecting structure.

By changing the wavefront shape of the light incident on the second deflecting structure by the second deflecting structure, the range of the reflection angle of the reflected light can be increased. Changing the wavefront shape of the light can reduce the amount of light reflected by the pixel region to the target direction compared to light originally collimated to the target (e.g., an obstacle), thereby reducing the ratio of the amount of light reflected by the pixel region to the amount of incident light, and further reducing the reflectivity of the light detection chip to the incident light.

In a specific implementation, the second deflecting structure includes a micro-nano optical structure. The second deflection structure is arranged as a micro-nano optical structure, so that the adaptability to the size of the pixel area can be improved.

In a specific implementation, the micro-nano optical structure corresponding to the second deflection structure may include a plurality of micro-nano optical units. The light incident to different areas in the pixel area is uniformly or independently adjusted through the micro-nano optical units, so that the accurate control of smaller area units in the pixel area can be realized, the optical performance of the micro-nano optical structure can be optimized, and the accuracy and the adjustability of the micro-nano optical structure are improved.

In a specific implementation, the distribution manner of the plurality of micro-nano optical units corresponding to the second deflection structure on the pixel area of the first end surface may adopt one or more of periodic arrangement or random arrangement. In particular, the periodic arrangement may include a uniform periodic arrangement or a non-uniform periodic arrangement.

For the plurality of micro-nano optical units which are periodically arranged, the optical response has periodicity and regularity, and the transmission and absorption conditions of light in a target wave band in the first main body can be selectively modulated by regulating and controlling the corresponding parameters such as the period, the shape and the like, so that the reflectivity of the light detection chip to incident light is changed. The plurality of micro-nano optical units which are arranged randomly can increase the wave band range of light absorbed by the first main body, so that the absorptivity of the first main body to the incident light can be improved, and the reflectivity of the light detection chip to the incident light can be reduced.

In a specific implementation, the micro-nano optical units corresponding to the second deflecting structure may have the same or different dimensions.

In a specific implementation, the micro-nano optical structure corresponding to the second deflection structure may be implemented by one or more of a micro-lens array structure, a super-surface structure, a fresnel zone plate structure, a conical structure, a grating structure, and the like.

As an alternative example, referring to a schematic structural diagram of another light detection chip in the embodiment of the present invention shown in fig. 12, the light detection chip includes a first end face, a first body, and a first anti-reflection structure, where:

The first end face comprises a pixel area and a non-pixel area, the first main body comprises a pixel body area 31 with a light receiving surface distributed in the pixel area and a non-pixel body area 32 with a light receiving surface distributed in the non-pixel area, the pixel body area 31 comprises a light detection photosensitive array 311, the light detection photosensitive array 311 comprises a plurality of light detection units 311e, the light receiving surface of the light detection photosensitive array is distributed in the pixel area, the first anti-reflection structure comprises a first deflection structure 33 and a second deflection structure 34, the first deflection structure 33 is arranged in an area between the non-pixel area D12 and the light receiving surfaces of the light detection units 311e, the first deflection structure 33 can be a first absorption layer, the second deflection structure 34 is arranged on the light receiving surface of the light detection units 311e, the second deflection structure 34 can be a micro lens array structure, and the micro lens array structure comprises a plurality of micro lens units, and the micro lens units are convex lenses.

Referring to the schematic diagram of the propagation path of the incident light when the microlens array structure is not provided in the pixel region shown in fig. 13A, it is assumed that the incident light is collimated and incident on the photosurface of the light detection unit 311e in the pixel region D11, and part of the incident light is reflected by the photosurface of the light detection unit 311e, and the other part directly enters the inside of the light detection unit to vertically propagate.

Referring to fig. 13B, a schematic diagram of a propagation path of incident light when a microlens array structure is disposed in a pixel area is shown, it is assumed that incident light is collimated and incident on a photosurface of a light detection unit 311e in the pixel area D11, the incident light is first incident on the microlens unit 34e, and other light except for a part of light reflected by the microlens unit 34e is refracted and then enters the light detection unit 311e to propagate, and based on the existence of a refraction angle, an optical path of the part of light in the light detection unit 311e after refraction is increased, so that an absorption rate of the light detection unit 311e to the incident light is improved, and a reflectivity of the light detection chip to the incident light is reduced.

With continued reference to fig. 13B, since the microlens unit 34e is a convex lens, the curvatures of the convex surfaces of the microlens unit 34e at different positions are different, and the angles at which light incident on the surfaces thereof is reflected are different (e.g., reflection angles α and β), the microlens unit 34e can change the wavefront shape of a portion of light reflected thereby such that the reflection angle range of reflected light increases. The microlens unit may further reduce the amount of light reflected by the pixel body region into the primary collimation direction, compared to the collimated and reflected light, so that the ratio of the amount of light reflected by the pixel region into the collimation direction to the amount of incident light may be reduced.

In practical operation, not only the high reflectivity of the light detection chip is liable to cause double-distance ghost images, but also the high reflectivity of the light emitting chip is liable to cause double-distance ghost images. Referring to another double-distance ghost principle schematic diagram shown in fig. 14, the laser radar L1 includes a transmitting end L11 and a receiving end L12, where a light emitting chip of the transmitting end L11 emits a detection signal S1, and forms an echo signal H1 after being reflected by an obstacle C1, and the echo signal H1 is received by the receiving end L12. At this Time, part Of the detection signal S2 is reflected by the obstacle C1 and returns to the light emitting chip, and if there is strong specular reflection on the surface Of the light emitting chip, part Of the detection signal S21 will reach the obstacle C1 again after being reflected by the light emitting chip, and a second echo signal H2 is detected by the receiving end L12 after being reflected by the obstacle C1, and the Time Of Flight (TOF) Of the echo signal H2 is approximately equal to two times Of the echo signal H1, which will result in a double-distance ghost image appearing at a distance twice the actual distance Of the measured obstacle C1 in the detection result. Therefore, how to reduce the reflectivity of the light emitting chip is a problem to be solved.

In order to solve the above technical problems, the embodiment of the invention provides a light emitting chip, in which a second anti-reflection structure is disposed in a non-emission area, and the second anti-reflection structure at least partially covers a light receiving surface of the non-emission area, and light incident to the light receiving surface is subjected to anti-reflection treatment by the second anti-reflection structure, so that the reflectivity of the non-emission area to light can be reduced, and the reflectivity of the light emitting chip to light can be reduced.

In order to better understand the inventive concept, the working principle and the advantages of the embodiments of the present invention, the following respectively explain the structures of the light emitting chips in the embodiments of the present invention.

In some embodiments of the invention, the light emitting chip may include a second end face, a second body, and a second anti-reflection structure, wherein:

the second main body comprises an emitter region with a light receiving surface distributed in the emission region and a non-emitter region with a light receiving surface distributed in the non-emission region;

The second anti-reflection structure is arranged in the non-emission area, at least partially covers the light receiving surface of the non-emission area and is suitable for reducing the reflectivity of the non-emission area to light.

By adopting the technical scheme, the second anti-reflection structure is arranged in the non-emission area and at least partially covers the light receiving surface of the non-emission area, so that the second anti-reflection structure can perform anti-reflection treatment on the detection light entering the coverage area of the second anti-reflection structure, the reflection quantity of the coverage area on the detection light is reduced, the reflectivity of the non-emission area on the light can be reduced, and the reflectivity of the light emitting chip on the incident light can be reduced.

In a specific implementation, the light emitting chip may emit light perpendicular to the second end surface. Wherein, the specific structure of the light emitting chip can be determined according to specific conditions. For example, the light emitting chip may include a Vertical-Cavity Surface radio frequency laser (Vertical-Cavity Surface-EMITTING LASER, VCSEL) chip.

As an alternative implementation, the light emitting chip may be one or more of a single mode VCSEL chip, a multimode VCSEL chip, a high power VCSEL chip, or a tunable VCSEL chip.

In a specific implementation, the emitter region may include a plurality of light emitting units, and the light emitting surface of the light emitting units is distributed in the emission region of the second end surface.

In a specific implementation, the second anti-reflection layer may include a second absorption layer adapted to absorb light of the target wavelength band.

In a specific implementation, the second absorbing layer may further include a black dye distributed in the photosensitive substrate.

In a specific implementation, reference may be made to the relevant arrangement of the first absorbent layer in any of the embodiments of the present specification, and this will not be described in detail here.

In order to better understand the inventive concept, the working principle and the advantages of the embodiments of the present invention, a light emitting chip in the embodiments of the present invention is explained below.

As an alternative example, reference is made to a schematic structural view of a light emitting chip in the embodiment of the present invention shown in fig. 15A, and a top view of the structure shown in fig. 15A shown in fig. 15B. The light emitting chip 40 comprises a second end face, a second main body and a second anti-reflection structure, wherein the second end face is suitable for receiving incident light, the second end face comprises an emitting area D21 and a non-emitting area D22, the second main body comprises an emitter area 41 with a light receiving surface distributed in the emitting area D21 and a non-emitter area 42 with a light receiving surface distributed in the non-emitting area D22, the emitter area 41 comprises a plurality of light emitting units 411, and a light emitting surface of the light emitting units is distributed in the emitting area D21 of the second end face D2. The second anti-reflection structure is disposed in the non-emission region D22, and includes a second absorption layer 43, and the second absorption layer 43 includes a resin substrate and a black inorganic dye distributed in the resin substrate.

The second absorption layer can absorb the incident detection light based on the light absorption characteristics of the resin base material and the black inorganic dye, thereby reducing the quantity of light reflected to the outside by the non-emitter region, reducing the reflectivity of the non-emitter region to light, and further reducing the reflectivity of the light emitting chip to the detection light. In addition, the second absorption layer can also block the influence of factors such as water vapor, dirt and the like in the working environment on the surface of the light-emitting chip, and is beneficial to improving the reliability of the light-emitting chip.

In a specific implementation, the second anti-reflection structure may further be disposed in the emission area, at least partially covering an area between the light emitting surfaces of the plurality of light emitting units, and adapted to reduce the reflectivity of the emitter area for incident light.

As an alternative example, referring to fig. 16, there is shown a top view of another light emitting chip structure in an embodiment of the present invention. In comparison with the light emitting chip structure shown in fig. 15B, the second absorption layer 43 of the light emitting chip in this example is provided in the region between the light emitting faces of the plurality of light emitting units 411 in addition to the non-emission region.

The reflected detection light can propagate in a second absorption layer covered on the corresponding area in the process of entering the area between the light emitting surfaces of the plurality of light emitting units, and the second absorption layer can absorb the incident detection light based on the light absorption characteristics of the resin base material and the black inorganic dye, so that the amount of light reflected to the outside by an emitter area is reduced, the reflectivity of the emitter area to light is reduced, and the reflectivity of the light emitting chip to the detection light is reduced.

The embodiment of the invention also provides a laser radar, referring to a structural schematic diagram of the laser radar in the embodiment of the invention shown in fig. 17, the laser radar L2 may include a laser L21, a detector L22 and a processor (not shown in the figure), where:

the laser L21 is suitable for transmitting detection signals of a target wave band to the outside;

The detector L22 is suitable for receiving an echo signal returned after the detection signal is reflected by the obstacle C2;

The processor is adapted to determine distance information of the external obstacle C2 according to the detection signal and the echo signal.

In specific implementation, the laser in the embodiments of the present invention may be implemented using the light emitting chip described in any of the foregoing embodiments, and specifically, reference may be made to the foregoing embodiments, which are not further illustrated herein.

When the detection signal generated by the laser to the outside is reflected back to the light emitting chip by the obstacle, the reflectivity of the laser to the detection signal can be reduced by adopting the light emitting chip in any embodiment, so that the problem of double ghost images in the detection result can be reduced.

In specific implementation, the detector in the embodiments of the present invention may be implemented using the light detection chip described in any of the foregoing embodiments, and specifically, reference may be made to the foregoing embodiments, which are not further illustrated herein.

When the echo signal reflected by the detector to the outside is reflected back to the light detection chip by the obstacle, the reflectivity of the detector to the echo signal can be reduced by adopting the light detection chip in any embodiment, so that the problem of double ghost images in the detection result can be reduced.

Based on the arrangement of the detector and the laser, part of the echo signal is reflected to the laser radar by the detector, and part of the detection signal is reflected to the laser radar by the laser, and the echo signal and the detection signal propagate in the laser radar, so that noise crosstalk in the laser radar can be caused.

In order to solve the problem, in a specific implementation, the laser radar may further comprise a housing and an absorber, wherein the absorber is arranged inside the housing and is adapted to absorb echo signals and/or detection signals reflected by the detector and/or the laser to the inside of the housing.

By absorbing echo signals and/or detection signals reflected by the detector and/or the laser to the interior of the housing by the absorber, noise in the laser radar can be reduced, thereby reducing noise crosstalk in the laser radar.

In particular embodiments, the detector and/or the laser may reflect the incident echo signal and/or the detection signal in a directional or focused manner, and the absorber is arranged on the corresponding reflection path or at the corresponding focal position.

The detector and/or the laser directionally reflects or focuses the incident echo signals and/or detection signals by optimizing a noise control strategy, so that the absorber can realize efficient absorption of noise on a corresponding reflection path or a corresponding focus position.

The foregoing describes several embodiments of the present invention, and the various alternatives presented by the various embodiments may be combined, cross-referenced, with each other without conflict, extending beyond what is possible embodiments, all of which are considered to be embodiments of the present invention disclosed and disclosed.

Although the embodiments of the present invention are disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention is therefore intended to be limited only by the appended claims.

Claims

1.A light detection chip comprising a first end face, a first body, and a first anti-reflection structure, wherein:

The first body includes:

2. The chip of claim 1, wherein the first anti-reflective structure comprises:

3. The chip of claim 2, wherein the first absorber layer comprises:

A photosensitive substrate.

4. The chip of claim 3, wherein the first absorber layer further comprises:

and the black dye is distributed in the photosensitive substrate.

5. The chip of claim 1, wherein the first anti-reflective structure comprises:

6. The chip of claim 5, wherein the non-pixel body region comprises a metal filling structure;

and/or the number of the groups of groups,

7. The chip of claim 6, wherein the first deflection structure comprises:

Micro-nano optical structure.

8. The chip of claim 7, wherein the micro-nano optical structure comprises a plurality of micro-nano optical units, each micro-nano optical unit comprising at least one of the following arrangements:

Periodically arranging;

and (5) randomly arranging.

9. The chip of claim 8, wherein the periodic arrangement comprises at least one of:

uniformly and periodically arranging;

the non-uniform periodic arrangement.

10. The chip of claim 8, wherein the plurality of micro-nano optical units have the same or different dimensions.

11. The chip of claim 7, wherein the micro-nano optical structure comprises at least one of:

A microlens array structure;

A super surface structure;

a fresnel zone plate structure;

A conical structure;

and a grating structure.

12. The chip of claim 5, wherein the chip comprises a plurality of chips,

The first deflecting structure is adapted to cause light incident thereon to be directionally reflected.

13. The chip of any of claims 2-12, wherein the first anti-reflective structure further comprises:

14. The chip of claim 13, wherein the anti-reflection layer is adapted to reduce sensitivity of reflectivity of the light-receiving surface of the non-pixel body region to an angle of incidence of light.

15. The chip of claim 14, wherein the anti-reflection layer comprises:

A film structure composed of a plurality of sub anti-reflection layers.

16. The chip as set forth in any one of claims 2 to 4, wherein the pixel body region includes a plurality of light detecting units having light sensitive surfaces distributed in the pixel region of the first end face;

17. The chip according to any one of claims 2 to 12, wherein the pixel body region includes a plurality of light detecting units having light sensitive surfaces distributed in the pixel region of the first end face;

18. The chip of claim 17, wherein the second deflection structure is adapted to increase the absorptivity of the first body to light;

and/or the number of the groups of groups,

19. The chip of claim 18, wherein the second deflection structure comprises:

Micro-nano optical structure.

20. The chip of claim 19, wherein the micro-nano optical structure comprises a plurality of micro-nano optical units, each micro-nano optical unit comprising at least one of the following arrangements:

Periodically arranging;

and (5) randomly arranging.

21. The chip of claim 20, wherein the periodic arrangement comprises at least one of:

uniformly and periodically arranging;

the non-uniform periodic arrangement.

22. The chip of claim 20, wherein the plurality of micro-nano optical units have the same or different dimensions.

23. The chip of claim 19, wherein the micro-nano optical structure comprises at least one of:

A microlens array structure;

A super surface structure;

a fresnel zone plate structure;

A conical structure;

and a grating structure.

24. The chip of claim 1, wherein the pixel body region comprises a plurality of light detection units, the light sensitive surfaces of which are distributed in the pixel region of the first end surface;

The light detection unit includes at least one of:

A single photon avalanche diode;

A silicon photomultiplier;

Avalanche photodiodes.

25. A light emitting chip comprising a second end face, a second body, and a second anti-reflection structure, wherein:

The second body includes:

26. The light emitting chip of claim 25, wherein the second anti-reflective structure comprises:

27. The light emitting chip of claim 26, wherein the second absorber layer comprises a photosensitive substrate.

28. The light emitting chip of claim 27, wherein the second absorber layer comprises a black dye disposed within the photosensitive substrate.

29. The light emitting chip of any one of claims 26-28, wherein the emitter region comprises a plurality of light emitting cells having light emitting surfaces distributed over the emission region of the second end face;

30. A laser radar which comprises a laser beam source, characterized by comprising the following steps:

Wherein:

the detector comprising a light detection chip as claimed in any one of claims 1 to 24, and/or,

The laser comprising a light emitting chip as claimed in any one of claims 25 to 29.

31. The lidar of claim 30, further comprising:

A housing;