CN119446906A - A semiconductor structure and a method for forming the same - Google Patents
A semiconductor structure and a method for forming the same Download PDFInfo
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Abstract
The invention discloses a semiconductor structure and a forming method thereof, wherein the forming method of a semiconductor comprises a reactor and a substrate, the reactor comprises a reaction area, a first gas distribution cavity and a second gas distribution cavity, the first gas distribution cavity is communicated with the reaction area, a first reaction gas is introduced into the reaction area, a second reaction gas is introduced into the reaction area through the second gas distribution cavity, the first reaction gas and the second reaction gas perform P-type layer growth on the substrate, the first reaction gas at least comprises a V-group precursor and a first carrier gas, and the second reaction gas at least comprises a P-type doping precursor, a III-group precursor and a second carrier gas. According to the invention, the relative flow rate or relative density of the second carrier gas relative to the first reaction gas is regulated, so that the second reaction gas is faster in transmission speed, the transmission direction is not easy to change, the doping concentration of P-type doping ions in the P-type layer is improved, the doping is more uniform, and the performance of the semiconductor device is further improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof.
Background
III-V compound semiconductors are widely used for manufacturing photoelectric devices, power electronics and radio frequency devices due to their large forbidden band width, wide direct band gap (high photoelectric conversion efficiency), high electron mobility, high temperature resistance, and other semiconductor characteristics. One process that is important in order to achieve the function of these devices is P-doped epitaxial growth. In the P-type doped epitaxial growth process, a P-type doped precursor and a III-group precursor are mixed and enter a reactor to react with a V-group precursor, so that the P-type doped III-V compound semiconductor is obtained.
Currently, the P-type doping precursor is magnesium dicyclopentadiene, however, the magnesium dicyclopentadiene and the group V are easy to react before reaching the substrate, so that the doping efficiency and the doping uniformity are affected, and the performance of the device is finally affected.
Disclosure of Invention
The invention aims to overcome the defects of low doping efficiency and uneven doping of a P-type doping precursor in a III-V compound semiconductor, improve a semiconductor structure forming method, realize effective transportation and doping uniformity of the P-type doping precursor, and further improve the performance of a device.
In order to achieve the above purpose, the invention provides a method for forming a semiconductor structure, which comprises providing a reactor, wherein the reactor comprises a reaction area and a gas spray head positioned at the top of the reaction area, the gas spray head comprises a first gas distribution cavity and a second gas distribution cavity which are stacked up and down, the first gas distribution cavity and the second gas distribution cavity are respectively communicated with the reaction area, providing a first substrate and are arranged in the reaction area, introducing a first reaction gas into the reaction area through the first gas distribution cavity, introducing a second reaction gas into the reaction area through the second gas distribution cavity, growing a P-type layer on the substrate by the first reaction gas and the second reaction gas, wherein the first reaction gas at least comprises a V-group precursor and a first carrier gas, the first reaction gas output by the first gas distribution cavity is provided with a first density and a second flow rate, the second reaction gas at least comprises a P-type doping precursor, a III-group precursor and a second flow rate, the second flow rate is provided with a second density and a second flow rate which is higher than the first flow rate and the second flow rate, the second flow rate is provided with a second flow rate and the second flow rate is higher than the first flow rate and the second flow rate is provided with a second flow rate, and the second flow rate is higher than the second flow rate.
Optionally, the relative flow rate or the relative density of the second carrier gas is adjusted, so that the doping concentration of the doping precursor in the P-type layer is improved by more than 10 times.
Optionally, when the relative density is 170%, the relative flow rate of the second carrier gas and the resistance of the P-type layer is expressed as a relation of y= 3.652x 2 -28.37x+56.27, and the relative flow rate of the holes in the P-type layer and the second carrier gas is expressed as a relation of y= (8e+16) x+ (6e+14).
Optionally, the relative flow rate of the second carrier gas is 1.5-5 times.
Optionally, the relative flow rate of the second carrier gas is 3-4.3 times.
Optionally, when the relative flow rate is 354%, the relative density of the second carrier gas and the resistance of the P-type layer is expressed as a relation of y=4.092x 2 -16.38x+17.17, and the relative density of the holes in the P-type layer and the second carrier gas is expressed as a relation of y= (2e+17) x- (5e+16).
Optionally, the relative density of the second carrier gas is 1.0-5.0 times.
Optionally, the relative density of the second carrier gas is 1.5-2.3 times.
Optionally, the first carrier gas comprises hydrogen.
Optionally, the first carrier gas further comprises nitrogen.
Optionally, the second carrier gas comprises nitrogen.
Optionally, the second carrier gas further comprises hydrogen.
Optionally, the second gas distribution chamber is isolated as an inner chamber and an outer chamber to independently adjust the relative flow rate or relative density of the second carrier gas through the inner and outer chambers.
Optionally, the group III precursor at least includes any one or a combination of any plurality of a gallium source precursor, a boron source precursor, an aluminum source precursor, and an indium source precursor.
Optionally, the group V precursor at least comprises a nitrogen source precursor, and the nitrogen source precursor is hydrogen nitride.
Optionally, the P-type doping precursor is magnesium-bis-cyclopentadienyl.
The invention also provides a semiconductor structure, which at least comprises:
A substrate;
The P-type layer is formed on the substrate and is prepared by the method for forming the semiconductor structure.
Optionally, the composition of the P-type layer is represented by In xGayAl1-x-y N, wherein x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x+y is more than or equal to 0 and less than or equal to 1.
Optionally, the P-type layer is any one of GaN, alGaN or InAlGaN.
Compared with the prior art, the technical scheme of the invention has the beneficial effects that at least:
(1) According to the invention, the pre-reaction of the P-type doped precursor and the V-group precursor is reduced by adjusting the relative flow rate or the relative density of the second carrier gas, and the generation of intermediate byproducts is prevented, so that the doping concentration of doped ions in the P-type layer is improved by up to 10 times, the effective transportation and uniform distribution of the doped ions in the P-type layer can be realized, and the performance of a device is further improved.
(2) The invention further discloses a gas spray head, which comprises a first gas distribution cavity and a second gas distribution cavity which are stacked up and down, wherein the second gas distribution cavity is positioned above the first gas distribution cavity, so that a V-group precursor in the first gas distribution cavity positioned below can receive more heat radiation from a heating component in the cavity, the decomposition of the V-group precursor is facilitated, the utilization efficiency is improved, the second gas distribution cavity is divided into an inner cavity and an outer cavity, and the relative flow rate or relative density of a second carrier gas which is introduced into the inner cavity and the outer cavity is regulated differently, so that the inner cavity and the outer cavity have different flow rates and densities, and the defect of uneven doping caused by pre-reaction of the P-type doped precursor and the V-group precursor can be compensated, thereby realizing the radial doping uniformity regulation of doped ions.
Drawings
Fig. 1 is a flow chart of a method for forming a semiconductor structure according to the present invention.
Fig. 2 is a schematic view of a semiconductor structure forming apparatus according to the present invention.
Fig. 3 is a schematic diagram showing the relationship between the relative flow rate of the second carrier gas and the doping efficiency of magnesium in the P-type layer while maintaining the relative density of the second carrier gas in the semiconductor forming method of the present invention.
Fig. 4 is a schematic diagram showing the relationship between the relative density of the second carrier gas and the doping efficiency of magnesium in the P-type layer while maintaining the relative flow rate of the second carrier gas in the method of forming a semiconductor according to the present invention.
The device comprises a first gas distribution cavity, a second gas distribution cavity, a 3-reaction area, a 4-substrate, a 5-partition wall and a 6-gas spray head, wherein the first gas distribution cavity, the second gas distribution cavity, the 3-reaction area and the 6-gas spray head are arranged in the first gas distribution cavity.
Detailed Description
The technical scheme of the invention is further described below with reference to the accompanying drawings and examples.
The terms "on," "above," and "over" should be read in the broadest sense so that "on" means not only "directly on" something but also includes the meaning of other intervening features or layers therebetween, and "over" or "over" means not only "over" or "over" something, but also may include the meaning of "over" or "over" it without other intervening features or layers therebetween (i.e., directly on something).
The term "forming" or "disposing" is used hereinafter to describe the act of applying a layer of material to a substrate. These terms are intended to describe any viable layer formation technique including, but not limited to, thermal growth, sputtering, evaporation, chemical vapor deposition, epitaxial growth, electroplating, and the like.
III-V semiconductor materials include compounds containing one element from group "III" of the periodic Table and another element from group "V" of the periodic Table. For example, the group III elements may include boron, aluminum, gallium, indium, etc., and the group V elements may include nitrogen, phosphorus, arsenic, antimony, etc. Group III-V semiconductor materials, such as gallium nitride (GaN), indium nitride (InN), aluminum nitride (AlN), etc., are typically obtained by epitaxial growth on a base substrate using a vapor phase growth method, such as an organometallic vapor phase growth method, a molecular beam vapor phase growth method, or a hydride vapor phase growth method. Taking an organic metal vapor phase growth method as an example, a III-V group compound semiconductor MOCVD (metal organic chemical vapor deposition) reactor is provided with a III group gas distribution cavity and a V group gas distribution cavity, a P-type doping precursor is usually mixed with a III group precursor and then enters the III group gas distribution cavity through a III group precursor pipeline, a V group precursor enters the V group gas distribution cavity through a V group precursor pipeline, and the P-type doping precursor, the III group precursor and the V group precursor enter a reaction area to carry out epitaxial growth of a P-type layer on a bottom substrate.
Because the P-type doped precursor has stronger activity, when the P-type doped precursor, the III-group precursor and the V-group precursor are sprayed into the reaction area from the gas spray header once respectively, the P-type doped precursor and the V-group precursor are easy to pre-react to generate intermediate byproducts before reaching the substrate. The pre-reaction consumes the P-type dopant precursor, thereby reducing the amount of the P-type dopant precursor reaching the substrate and further reducing the doping efficiency of the P-type dopant precursor on the substrate.
In order to solve the technical problem, the invention at least adopts one of the following technical schemes:
1) The relative flow velocity of the second carrier gas introduced into the second gas distribution cavity is adjusted, so that the flow velocity of the second reaction gas is larger than that of the first reaction gas, the transmission speed of the second reaction gas in the second gas distribution cavity is higher, the diffusion of doping ions in a reaction area is reduced, and the collision contact between the doping ions and the V-group precursor is avoided, so that the pre-reaction is reduced.
2) The relative density of the second carrier gas introduced into the second gas distribution cavity is adjusted, so that the density of the second reaction gas is larger than that of the first reaction gas, after the second reaction gas enters the reaction area, the second reaction gas is not easy to collide with other molecules or is not easy to change direction after colliding with other molecules, and then the transmission direction of the second reaction gas in the second gas distribution cavity is not easy to change, so that more P-type doped ions can reach the surface of the substrate.
By the method for adjusting the relative flow rate or the relative density of the second carrier gas, the pre-reaction of the P-type doping precursor and the V-group precursor is reduced, and the generation of intermediate byproducts is reduced, so that the doping efficiency of the P-type doping precursor is improved, and the doping of the P-type layer of the formed semiconductor structure is more uniform.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 is a flow chart of a method of forming a semiconductor structure according to the present invention.
As shown in fig. 1, the method for forming a semiconductor structure provided by the present invention includes:
step S1, providing a reactor, wherein the reactor comprises a reaction area and a gas spray header positioned at the top of the reaction area, the gas spray header comprises a first gas distribution cavity and a second gas distribution cavity which are stacked up and down, and the first gas distribution cavity and the second gas distribution cavity are respectively communicated with the reaction area.
The first gas distribution cavity and the second gas distribution cavity are respectively communicated with the reaction area, so that the first reaction gas and the second reaction gas are respectively introduced into the reaction area through the first gas distribution cavity and the second gas distribution cavity, and the first reaction gas and the second reaction gas can be prevented from pre-reacting in the gas spray header, and intermediate byproducts are generated.
In some embodiments, in order to further realize effective transport of the P-type doped precursor, a transport distance between the gas shower head at the top of the reaction region and the upper surface of the substrate is 30 mm-90 mm, so that the first reaction gas and the second reaction gas are prevented from pre-reacting in advance before reaching the substrate due to the excessive transport distance, thereby increasing the generation of intermediate byproducts and affecting the doping of the P-type doped precursor.
Step S2, providing a substrate and placing the substrate in the reaction area.
The substrate may be any one selected from a silicon substrate, a silicon carbide substrate, and a gallium nitride substrate.
And step S3, introducing a first reaction gas into the reaction area through the first gas distribution cavity, introducing a second reaction gas into the reaction area through the second gas distribution cavity, and reacting the first reaction gas and the second reaction gas on the substrate to form a P-type layer.
The first reactive gas at least comprises a V-group precursor and a first carrier gas, the first reactive gas output by the first gas distribution cavity has a first density and a first flow rate, the second reactive gas at least comprises a P-type doping precursor, a III-group precursor and a second carrier gas, the P-type doping precursor is used for providing P-type doping ions, the second carrier gas output by the second gas distribution cavity has a second density and a second flow rate, the second density is larger than the first density, the second flow rate is larger than the first flow rate, the ratio of the second density to the first density is the relative density of the second carrier gas, the ratio of the second flow rate to the first flow rate is the relative flow rate of the second carrier gas, and the doping concentration of the P-type doping ions in the P-type layer is improved by adjusting the relative flow rate or the relative density of the second carrier gas.
The purpose of this step is to allow the first and second reactant gases to react on the substrate to grow a P-type layer. In order to avoid the pre-reaction of the V-group precursor, the P-type doping precursor and the III-group precursor in the gas distribution cavity in advance, the first reaction gas and the second reaction gas are respectively introduced through the first gas distribution cavity and the second gas distribution cavity.
In order to increase the doping concentration, in some embodiments, by adjusting the relative flow rate of the second carrier gas in the second reaction gas, the flow rate of the second reaction gas is greater than that of the first reaction gas, and the transmission speed of the second reaction gas is faster, so that the pre-reaction of the P-type doped precursor and the group V precursor before reaching the substrate is reduced. In other embodiments, the relative density of the second carrier gas in the second reaction gas may be adjusted so that the density of the second reaction gas is greater than that of the first reaction gas, so that the transmission direction of the second reaction gas is not easy to change, and the pre-reaction of the P-type doped precursor and the V-group precursor before reaching the substrate is reduced. The first reaction gas and the second reaction gas perform P-type layer growth on the substrate, and the pre-reaction is reduced, so that more P-type doping precursors reach the surface of the substrate, and the doping concentration of P-type doping ions in the P-type layer is improved.
When the size of the substrate is large, when the reaction gas is introduced into the substrate in the reaction region through the gas shower head, the gas distribution corresponding to the edge portion of the substrate and the center portion of the substrate may be different. Particularly, when the reaction gas is pumped out by the pumping pump, the gas distribution at the edge portion of the substrate may be different from that at the center portion of the substrate. The different gas distribution at different parts of the substrate surface may lead to non-uniform doping of the doping precursor at the substrate surface. When the difference between the gas flow rate or density passing through the central region and the edge region of the gas distribution cavity is large, the mutation of the gas flow rate or density at the gas spray head is caused, so that the mutation of the lower substrate processing effect is caused, the non-uniformity of the gas reacting on the substrate is caused, and the doping uniformity and the substrate processing quality and efficiency are seriously affected. To solve the technical problem, in some embodiments of the present invention, the second gas distribution chamber is divided into an inner chamber and an outer chamber, the inner chamber corresponds to a central region of the second gas distribution chamber, the outer chamber corresponds to an edge region surrounding a periphery of the central region, the inner chamber is disposed opposite to a central portion of the substrate in the reaction region, and the outer chamber is disposed opposite to an edge portion of the substrate in the reaction region.
In order to achieve radial doping uniformity adjustment of the doping ions, the flow rate and density may be differentially adjusted for the gas passing through the inner and outer chambers of the second gas distribution chamber. The difference between the flow rates of the second carrier gas and the inner cavity can be reduced by adjusting the flow rate of the second carrier gas respectively introduced into the inner cavity and the outer cavity when the difference between the flow rates of the gases passing through the inner cavity and the outer cavity is large, or the difference between the densities of the two can be reduced by adjusting the flow rates of the nitrogen and the hydrogen in the second carrier gas respectively introduced into the inner cavity and the outer cavity when the difference between the densities of the gases passing through the inner cavity and the outer cavity is large. Therefore, the invention can prevent the gas sprayed onto the substrate from being uneven due to larger gas flow velocity or density difference in different areas when the gas passing through the inner cavity and the outer cavity is sprayed out from the spray header in a differential adjustment mode.
The group III precursor is an organometallic salt, and in some embodiments, the group III precursor comprises at least one of a gallium source precursor, a boron source precursor, an aluminum source precursor, an indium source precursor, or a combination of any of a plurality of them. The gallium source precursor at least comprises any one or a combination of any plurality of trimethyl gallium, triethyl gallium, diethyl gallium chloride and co-located gallium hydride compounds, the boron source precursor at least comprises any one or a combination of any one or a plurality of trimethyl boron and triethyl boron, the aluminum source precursor at least comprises any one or a combination of any one or a plurality of trimethyl aluminum and triethyl aluminum, and the indium source precursor at least comprises any one or a combination of any one or a plurality of trimethyl indium and triethyl indium.
In order to facilitate the adjustment of the relative flow rate and relative density, the present invention also includes a carrier gas. The carrier gas does not react with the reaction gas, and the carrier gas of the present invention is used to disperse the reaction gas. In the invention, the carrier gas at least contains two gases with larger density difference, for example, the carrier gas can be nitrogen or hydrogen, when the relative density is larger, the flow of the nitrogen in the second carrier gas can be regulated, and when the relative density is smaller, the flow of the hydrogen in the second carrier gas can be regulated. In some embodiments, the group V precursor is introduced into the first gas distribution chamber with a first carrier gas, which may be any one of hydrogen, nitrogen, or a mixture of hydrogen and nitrogen. In some embodiments, the group III precursor and the P-doped precursor are introduced into the second gas distribution chamber with a second carrier gas, which may be any one of nitrogen, hydrogen, or a mixture of nitrogen and hydrogen.
The second reaction gas at least comprises a P-type doping precursor, a III-group precursor and a second carrier gas, and the quantity of the III-group precursor is smaller and is usually not more than 1000sccm, so that the P-type doping precursor and the III-group precursor are mainly led into the second gas distribution cavity through the second carrier gas when the P-type layer is grown. Therefore, the relative flow rate or the relative density of the second carrier gas is adjusted, so that the relative flow rate or the relative density of the second reaction gas is changed, the transmission speed of the second reaction gas is higher, the transmission direction is not easy to change, and the doping of the doped ions in the P-type layer is more uniform.
In order to prevent the reactive gas from damaging the thin film on the surface of the substrate due to high-energy ions, in some embodiments, the first reactive gas and the second reactive gas are both saturated vapor, gas molecules are thermally cracked at a high temperature to generate clusters, and the clusters are respectively introduced into the first gas distribution chamber and the second gas distribution chamber in the form of saturated vapor, and are respectively diffused to the surface of the substrate for growth by the first carrier gas and the second carrier gas.
In some embodiments, the P-type layer may comprise a P-type doped aluminum nitride layer, a P-type doped gallium nitride layer, or other suitable P-type doped III-V compound material. The P-type dopant precursor in the P-type doped III-V compound material may include magnesium-bis-cyclopentadienyl (Cp 2 Mg), magnesium, or other suitable P-type dopant precursor. In the following examples of the present invention, the P-type dopant precursors are all magnesium-dicyclopentadiene.
Fig. 2 is a schematic view of a semiconductor structure forming apparatus according to the present invention.
As shown in fig. 2, a semiconductor structure forming apparatus of the present invention includes at least one reactor. The reactor comprises a reaction area 3 and a gas spray header 6 positioned at the inner top of the reaction area 3, wherein the gas spray header 6 comprises a first gas distribution cavity 1 and a second gas distribution cavity 2 which are stacked up and down, the second gas distribution cavity 2 is positioned above the first gas distribution cavity 1, and the first gas distribution cavity 1 and the second gas distribution cavity 2 are respectively communicated with the reaction area 3. The second gas distribution chamber 2 is divided into an inner chamber and an outer chamber by two dividing walls 5. A substrate 4 is placed at the bottom of the reaction zone 3. The transmission distance between the gas spray header 6 at the top of the reaction area 3 and the substrate 4 at the bottom of the reaction area 3 is 30-90 mm.
The working principle of the device for forming the semiconductor structure is as follows:
The substrate 4 to be processed is placed at the bottom of the reaction area 3, purge gas is introduced to purge the substrate 4, first reaction gas is introduced into the first gas distribution cavity 1, second reaction gas is introduced into the second gas distribution cavity 2, the relative density of the second carrier gas in the second reaction gas is kept unchanged, the relative flow rate of the introduced second carrier gas is regulated so that the relative flow rate of the second carrier gas is larger than that of the first reaction gas, or the relative flow rate of the second carrier gas in the second reaction gas is kept unchanged, and the nitrogen flow rate or the hydrogen flow rate in the introduced second carrier gas is regulated so that the relative density of the second carrier gas is larger than that of the first reaction gas.
Further, the relative flow rates of the second carrier gas introduced into the inner cavity and the outer cavity are respectively adjusted so that the gases introduced into the inner cavity and the outer cavity have different flow rates, or the flow rates of the nitrogen or the hydrogen in the second carrier gas introduced into the inner cavity and the outer cavity are respectively adjusted so that the gases introduced into the inner cavity and the outer cavity have different densities. The first reaction gas and the second reaction gas are respectively sprayed out by the gas spray head 6 and are transmitted to the substrate 4 for P-type layer growth.
The invention also provides a semiconductor structure, which comprises a substrate and a III-V compound semiconductor with a laminated structure, wherein the laminated structure is formed on the substrate and is represented by a general formula In xGayAl1-x-y N (wherein x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x+y is more than or equal to 0 and less than or equal to 1).
In some embodiments, the III-V compound semiconductor layer (P-type layer) may include GaN, alGaN, inAlGaN, or other suitable III-V compound semiconductor material.
Example 1
The embodiment provides a method for forming a semiconductor structure, which comprises the following steps:
Step S1, providing a reactor for forming a semiconductor structure, wherein the reactor comprises a reaction area and a plurality of gas spray heads positioned at the top of the reaction area, the gas spray heads comprise a first gas distribution cavity and a second gas distribution cavity which are stacked up and down, and the first gas distribution cavity and the second gas distribution cavity are respectively communicated with the reaction area;
Step S2, providing a silicon substrate, placing the silicon substrate at the bottom of a reaction area, and introducing purge gas to purge the silicon substrate at the bottom of the reaction area;
And S3, taking hydrogen and nitrogen as first carrier gases, and keeping ammonia gas which is a V-group precursor continuously introduced into the first gas distribution cavity through a V-group precursor pipeline under the action of the first carrier gases, wherein the first carrier gases and the ammonia gas form first reaction gases. Introducing magnesium dichloride through a magnesium dichloride precursor pipeline, introducing trimethylgallium through a III group precursor pipeline, mixing the magnesium dichloride and the trimethylgallium, and using nitrogen and hydrogen as second current-carrying gas, wherein under the action of the second current-carrying gas, the magnesium dichloride and the trimethylgallium are kept to be continuously introduced into a second gas distribution cavity, and the second current-carrying gas, the magnesium dichloride and the trimethylgallium form second reaction gas. The component gas flows are shown in table 1, wherein hydride represents a first carrier gas leading into the first gas distribution chamber, inner chamber carrier gas represents a second carrier gas leading into the inner chamber of the second gas distribution chamber, and outer chamber carrier gas represents a second carrier gas leading into the outer chamber of the second gas distribution chamber.
And growing a P-type layer on the silicon substrate by adopting a metal organic chemical vapor deposition epitaxial growth method, and setting respective flow rates by using mass flow meters of nitrogen and hydrogen so as to adjust the relative flow rate and the relative density. When the relative density of the second carrier gas is fixed to be 1.7 times, the flow rate of the first reaction gas introduced into the first gas distribution cavity is kept unchanged, and the flow rate of the second carrier gas introduced into the second gas distribution cavity is regulated, so that the flow rate of the second carrier gas is multiplied from 3 to 3.5 times and 4.3 times relative to the flow rate of the first reaction gas. And stopping introducing the gas in the first gas distribution cavity and the second gas distribution cavity until the required growth thickness is reached.
TABLE 1 gas flows and relative flow rates and relative densities of the components
(Where slm and sccm are units of gas flow, 1slm means gas flow per 1 minute taking up a weight of 1 liter of volume in a standard state, 1000sccm corresponds to 1 slm.)
As shown in fig. 3, when the relative density is 1.7 times, as the flow rate of the second carrier gas is increased from 3 times to 3.5 times and 4.3 times with respect to the flow rate of the first reaction gas, the hole concentration of P-type gallium nitride is continuously increased, and the resistance is continuously decreased, indicating that the doping efficiency of magnesium is improved. The relative flow rate of the second carrier gas and the positive holes in the P-type layer are expressed by the relation of y= 3.652x 2 -28.37x+56.27 (wherein the x-coordinate represents the relative flow rate of the second carrier gas, the left y-coordinate represents the resistance of the P-type layer), and the relative flow rate of the positive holes in the P-type layer and the second carrier gas is expressed by the relation of y= (8e+16) x+ (6e+14) (wherein the x-coordinate represents the relative flow rate of the second carrier gas, and the right y-coordinate represents the concentration of positive holes in the P-type layer). Therefore, when the relative density of the second carrier gas is kept unchanged, the doping concentration and the doping efficiency of the magnesium in the P-type layer can be improved by adjusting the relative flow rate of the second carrier gas.
Example 2
The embodiment provides a method for forming a semiconductor structure, which comprises the following steps:
The present embodiment differs from embodiment 1 in that in step S3, the respective flow rates are set by mass flow meters of nitrogen and hydrogen, thereby adjusting the relative flow rates and the relative densities. When the relative flow rate of the second carrier gas is fixed to be 3.54 times, the density of the first reaction gas introduced into the first gas distribution cavity is kept unchanged, and the flow rates of nitrogen and hydrogen in the second carrier gas introduced into the second gas distribution cavity are regulated, so that the density of the second carrier gas is multiplied from 1.5 to 2.3 times relative to the density of the first reaction gas.
As shown in fig. 4, when the relative flow rate is 3.54 times, as the density of the second carrier gas is multiplied by 2.3 times from 1.5 to the density of the first reaction gas, the hole concentration of P-type gallium nitride is continuously increased, and the resistance is continuously decreased, indicating that the doping efficiency of magnesium is improved. The relative density of the P-type layer and the second carrier gas is expressed by the relation of y=4.092x 2 -16.38x+17.17 (wherein the x coordinate represents the relative density of the second carrier gas, the left y coordinate represents the resistance of the P-type layer), and the relative density of the holes in the P-type layer and the second carrier gas is expressed by the relation of y= (2e+17) x- (5e+16) (wherein the x coordinate represents the relative density of the second carrier gas, and the right y coordinate represents the hole concentration in the P-type layer). Therefore, when the relative flow rate of the second carrier gas is kept unchanged, the doping concentration and the doping efficiency of the magnesium in the P-type layer can be improved by adjusting the relative density of the second carrier gas.
In summary, according to the method for forming a semiconductor structure of the present invention, the relative density of the second carrier gas is kept unchanged, the relative flow rate of the second carrier gas with respect to the first reactant gas is adjusted, or the relative flow rate of the second carrier gas is kept unchanged, the relative density of the second carrier gas with respect to the first reactant gas is adjusted, further, the gas distribution cavity is divided into different cavities, and the radial doping uniformity adjustment is performed by differentially adjusting the relative flow rate or the relative density of the gas, so that the doping concentration of magnesium in the P-type layer is significantly improved, the doping efficiency of magnesium is improved, the doping is more uniform, and the performance of the semiconductor device is improved.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (19)
1. A method of forming a semiconductor structure, comprising:
Providing a reactor, wherein the reactor comprises a reaction area and a gas spray head positioned at the top of the reaction area, the gas spray head comprises a first gas distribution cavity and a second gas distribution cavity which are stacked up and down, and the first gas distribution cavity and the second gas distribution cavity are respectively communicated with the reaction area;
providing a substrate arranged in the reaction area;
Introducing a first reaction gas into the reaction area through the first gas distribution cavity, and introducing a second reaction gas into the reaction area through the second gas distribution cavity, wherein the first reaction gas and the second reaction gas perform P-type layer growth on the substrate;
The first reactive gas at least comprises a V-group precursor and a first carrier gas, the first reactive gas output by the first gas distribution cavity has a first density and a first flow rate, the second reactive gas at least comprises a P-type doping precursor, a III-group precursor and a second carrier gas, the P-type doping precursor is used for providing P-type doping ions, the second carrier gas output by the second gas distribution cavity has a second density and a second flow rate, the second density is larger than the first density, the second flow rate is larger than the first flow rate, the ratio of the second density to the first density is the relative density of the second carrier gas, and the ratio of the second flow rate to the first flow rate is the relative flow rate of the second carrier gas;
and the doping concentration of the P-type doping ions in the P-type layer is improved by adjusting the relative flow rate or the relative density of the second carrier gas.
2. The method of claim 1, wherein a relative flow rate or a relative density of the second carrier gas is adjusted such that a doping concentration of a doping precursor in the P-type layer is increased by more than 10 times.
3. The method of claim 1, wherein when the relative density is 170%, the relative flow rate of the second carrier gas and the resistance of the P-type layer is expressed as y= (8e+16) x+ (6e+14), and the relative flow rate of the second carrier gas and the holes in the P-type layer is expressed as y= (3.652 x 2 -28.37x+56.27.
4. The method of claim 3, wherein the second carrier gas has a relative flow rate of 1.5-5 times.
5. The method of claim 4, wherein the relative flow rate of the second carrier gas is 3-4.3 times.
6. The method of claim 1, wherein when the relative flow rate is 354%, the relative density of the second carrier gas and the resistance of the P-type layer are expressed as a relationship of y=4.092χ 2 to 16.38x+17.17, and the relative density of the second carrier gas and the holes in the P-type layer are expressed as a relationship of y= (2e+17) x- (5e+16).
7. The method of claim 6, wherein the second carrier gas has a relative density of 1.0 to 5.0 times.
8. The method of claim 7, wherein the second carrier gas has a relative density of 1.5-2.3 times.
9. The method of forming a semiconductor structure of claim 1, wherein the first carrier gas comprises hydrogen.
10. The method of forming a semiconductor structure of claim 9, wherein the first carrier gas further comprises nitrogen.
11. The method of forming a semiconductor structure of claim 1, wherein the second carrier gas comprises nitrogen.
12. The method of forming a semiconductor structure of claim 11, wherein said second carrier gas further comprises hydrogen.
13. The method of forming a semiconductor structure of claim 1, wherein the second gas distribution chamber is isolated as an inner chamber and an outer chamber to independently adjust a relative flow rate or a relative density of a second carrier gas through the inner and outer chambers.
14. The method of claim 1, wherein the group III precursor comprises at least one of a gallium source precursor, a boron source precursor, an aluminum source precursor, an indium source precursor, or a combination of any of a plurality of them.
15. The method of claim 1, wherein the group V precursor comprises at least a nitrogen source precursor, and wherein the nitrogen source precursor is hydrogen nitride.
16. The method of claim 1, wherein the P-doped precursor is magnesium-bis-oxide.
17. A semiconductor device is provided, which is a semiconductor device, characterized in that it comprises at least:
A substrate;
The P-type layer is formed on the substrate, and the P-type layer is prepared by the method for forming the semiconductor structure according to any one of claims 1-16.
18. The semiconductor structure of claim 17, wherein said P-type layer comprises
In xGayAl1-x-y N, wherein, x is more than or equal to 0 and less than or equal to 1 y is more than or equal to 0 and less than or equal to 1 x+y is more than or equal to 0 and less than or equal to 1.
19. The semiconductor structure of claim 18, wherein the P-type layer is any one of GaN, alGaN, or InAlGaN.
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| CN103098175A (en) * | 2010-08-16 | 2013-05-08 | 应用材料公司 | Showerhead assembly with gas injection distribution devices |
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| CN114753002A (en) * | 2022-04-28 | 2022-07-15 | 西安唐晶量子科技有限公司 | Method for improving intrinsic doping uniformity of GaAs grown by MOCVD |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101684549A (en) * | 2008-09-24 | 2010-03-31 | 三菱电机株式会社 | Method for manufacturing nitride semiconductor device |
| CN102782808A (en) * | 2009-12-10 | 2012-11-14 | 同和电子科技有限公司 | P-type AlGaN layer and its manufacturing method and Group III nitride semiconductor light-emitting element |
| CN103098175A (en) * | 2010-08-16 | 2013-05-08 | 应用材料公司 | Showerhead assembly with gas injection distribution devices |
| CN112289897A (en) * | 2020-09-17 | 2021-01-29 | 华灿光电（浙江）有限公司 | Manufacturing method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer |
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