CN119595153B - Piezoelectric film pressure sensor suitable for different temperatures - Google Patents
Piezoelectric film pressure sensor suitable for different temperatures Download PDFInfo
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- CN119595153B CN119595153B CN202411827818.0A CN202411827818A CN119595153B CN 119595153 B CN119595153 B CN 119595153B CN 202411827818 A CN202411827818 A CN 202411827818A CN 119595153 B CN119595153 B CN 119595153B
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- heat preservation
- pressure sensor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/26—Auxiliary measures taken, or devices used, in connection with the measurement of force, e.g. for preventing influence of transverse components of force, for preventing overload
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
- G01L9/085—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor with temperature compensating means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Abstract
The invention discloses a piezoelectric film pressure sensor suitable for different temperatures, which comprises an upper heat preservation layer, an upper heating layer, a piezoelectric material film layer, a lower heating layer and a lower heat preservation layer which are sequentially overlapped from top to bottom, wherein the piezoelectric material film layer is encapsulated between the upper heating layer and the lower heating layer and leads out piezoelectric signals through signal wires, the upper heat preservation layer and the lower heat preservation layer are both composed of a hard supporting framework and a flexible heat insulation filling material, the hard supporting framework is a hollowed grid supporting frame, the thickness of the hard supporting framework is the thickness of the upper heat preservation layer and the lower heat preservation layer, and the flexible heat insulation filling material is filled in grids of the hard supporting framework. According to the invention, the heat insulation layer is arranged, so that the problem that the piezoelectric film pressure sensor is influenced by external temperature is solved, the sensitivity of the piezoelectric film pressure sensor is ensured, and the accuracy of piezoelectric data acquisition is improved.
Description
Technical Field
The invention relates to the technical field of piezoelectric film pressure sensors, in particular to a piezoelectric film pressure sensor applicable to different temperatures.
Background
The piezoelectric film pressure sensor is a dynamic strain sensor and is mainly composed of a film made of piezoelectric material (polyvinylidene fluoride PVDF or lead zirconate titanate piezoelectric ceramic PZT). The piezoelectric constant reflects the capacity of the piezoelectric material to generate charge under the action of stress, and is one of important indexes for measuring the performance of the piezoelectric material. The temperature at which the piezoelectric material begins to lose its piezoelectric properties is referred to as the curie point temperature, which is an important characteristic parameter of the piezoelectric material that determines the operating temperature range of the piezoelectric material. When the temperature increases to the curie point, the piezoelectric properties of the piezoelectric material will gradually be lost. When PVDF is actually used, the piezoelectric constants of the PVDF at different temperatures are greatly different, the sensitivity of the device is changed, and the PVDF particularly shows depolarization characteristics at high temperature. In actual engineering application, the external environment temperature is continuously changed, the piezoelectric coefficient of the material is also continuously changed, the force-electricity relationship is always in a fluctuation state, and the sensitivity of the device is also continuously changed, so that the data acquisition accuracy of the piezoelectric film pressure sensor in the actual engineering application has errors.
Disclosure of Invention
The invention aims to solve the technical problem of providing the piezoelectric film pressure sensor suitable for different temperatures, and by arranging the heat preservation layer, the problem that the piezoelectric film pressure sensor is influenced by external temperature is solved, so that the accuracy of piezoelectric data acquisition is improved while the sensitivity of the piezoelectric film pressure sensor is ensured.
The technical scheme of the invention is as follows:
The piezoelectric film pressure sensor comprises an upper heat preservation layer, an upper heating layer, a piezoelectric material film layer, a lower heating layer and a lower heat preservation layer which are sequentially overlapped from top to bottom, wherein the piezoelectric material film layer is packaged between the upper heating layer and the lower heating layer and leads out piezoelectric signals through a signal wire;
the upper heat preservation layer and the lower heat preservation layer are both composed of a hard supporting framework and a flexible heat insulation filling material, the hard supporting framework is a hollowed grid supporting frame, the thickness of the hard supporting framework is the thickness of the upper heat preservation layer and the thickness of the lower heat preservation layer, and the flexible heat insulation filling material is filled in the grids of the hard supporting framework.
The piezoelectric material film layer on be provided with flexible temperature sensor, flexible temperature sensor's electrode line, go up the power cord of zone of heating and zone of heating down and all be connected with external temperature controller.
The upper heating layer and the lower heating layer are respectively self-temperature-control PTC electrothermal films, and polyimide layers are packaged outside the self-temperature-control PTC electrothermal films.
The flexible temperature sensor is printed on the top surface or the bottom surface of the piezoelectric material film layer, and is distributed in an annular structure along the edge of the piezoelectric material film layer, and a high-heat-conductivity insulating isolation layer is arranged between the flexible temperature sensor and the piezoelectric material film layer.
The high heat conduction insulating isolation layer is a silicon dioxide film or an aluminum oxide film.
The grids of the hard supporting framework are X-shaped crossed prismatic grids, the thickness of the hard supporting framework is 0.8-1 mm, and the length and the width of each prismatic grid are 1-1.5 mm.
The hard supporting framework is made of polylactic acid or acrylonitrile-butadiene-styrene copolymer by adopting a 3D printing method.
The flexible heat insulation filling material is an aerogel heat insulation material, and is filled in the hard supporting framework by adopting a 3D printing method.
The invention has the advantages that:
(1) The upper heat preservation layer and the lower heat preservation layer can effectively prevent the damage of extremely high temperature or extremely low temperature of the external environment to the piezoelectric material film layer, the heat transfer effect of the upper heating layer and the lower heating layer to the external environment can be reduced, most of the existing heat preservation layer materials are of loose porous structures, deformation formed after external impact cannot be completely recovered, when external pressure is applied, the porous structures can absorb a part of energy of the external pressure, and the accuracy of data acquisition of the piezoelectric material film layer is affected.
(2) The invention is provided with the upper heating layer and the lower heating layer, which can heat the piezoelectric material film layer on two sides in a low temperature environment to ensure that the temperature of the piezoelectric material film layer is in a certain constant state, and the upper heating layer and the lower heating layer are respectively self-temperature-control PTC (positive temperature coefficient thermistor) electrothermal films, when the self-temperature-control PTC electrothermal films reach the set highest temperature, the resistance value is increased, the current is reduced, the heating power is reduced, the temperature tends to be stable, and the problem that the piezoelectric material film layer is depolarized due to high temperature is avoided.
(3) According to the invention, the flexible temperature sensor with the annular structure is distributed on the piezoelectric material film layer, the temperature distribution on the piezoelectric material film layer is uneven, the flexible temperature sensor with the annular distribution structure can fully cover the edge area of the piezoelectric material film layer, so that the temperature can be monitored in all directions, the high-heat-conductivity insulating isolation layer is arranged between the flexible temperature sensor and the piezoelectric material film layer, the high-heat-conductivity insulating isolation layer has the characteristics of high heat conductivity and low dielectric constant, and the high-heat-conductivity insulating isolation layer can be used for rapidly transmitting the temperature on the piezoelectric material film layer to the flexible temperature sensor and isolating the electromagnetic interference of the flexible temperature sensor on the piezoelectric material film layer.
Drawings
Fig. 1 is an exploded view of the present invention.
Fig. 2 is a plan view of the upper insulation layer of the present invention.
FIG. 3 is a schematic diagram of a flexible temperature sensor of the present invention printed on a thin film layer of piezoelectric material.
Fig. 4 is a schematic diagram of the structure of the present invention placed on a high-speed railway foundation for stress monitoring.
The device comprises a 1-upper heat preservation layer, a 2-upper heating layer, a 3-piezoelectric material film layer, a 4-lower heating layer, a 5-lower heat preservation layer, a 6-signal wire, a 7-flexible temperature sensor, an 8-high heat conduction insulating isolation layer, a 9-electrode wire, a 10-power supply wire, a 11-hard supporting framework, a 12-flexible heat insulation filling material, a 13-piezoelectric film pressure sensor, a 14-high-speed railway foundation, a 15-temperature controller and a 16-stress monitor.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
1-3, The piezoelectric film pressure sensor suitable for different temperatures comprises an upper heat preservation layer 1, an upper heating layer 2, a piezoelectric material film layer 3, a lower heating layer 4 and a lower heat preservation layer 5 which are sequentially stacked from top to bottom, wherein the piezoelectric material film layer 3 is packaged between the upper heating layer 2 and the lower heating layer 4 and leads out piezoelectric signals through a signal wire 6;
the upper heat preservation layer 1 and the lower heat preservation layer 5 are composed of a hard supporting framework and 11 flexible heat insulation filling materials 12, the hard supporting framework 11 is a hollowed grid supporting frame, the grids are X-shaped crossed prismatic grids, the thickness of the hard supporting framework 11 is the thickness of the upper heat preservation layer 1 and the lower heat preservation layer 5, the thickness of the hard supporting framework 11 is 0.8-1 mm, the length and the width of each prismatic grid are 1-1.5 mm, the flexible heat insulation filling materials 12 are filled in the prismatic grids of the hard supporting framework 11, the hard supporting framework 11 is manufactured by polylactic acid PLA or acrylonitrile-butadiene-styrene copolymer ABS by adopting a 3D printing method, the flexible heat insulation filling materials 12 are aerogel heat insulation materials, and the hard supporting framework 11 is filled by adopting a 3D printing method;
the top surface or the bottom surface of the piezoelectric material film layer 3 is printed with a flexible temperature sensor 7, the flexible temperature sensor 7 and the piezoelectric material film layer 3 are distributed along the edge of the piezoelectric material film layer 3 in an annular structure, a high-heat-conductivity insulating isolation layer 8 is arranged between the flexible temperature sensor 7 and the piezoelectric material film layer 3, electrode wires 9 of the flexible temperature sensor 7, power supply wires 10 of the upper heating layer 2 and the lower heating layer 4 are connected with an external temperature controller, the upper heating layer 2 and the lower heating layer 4 are respectively provided with a self-temperature-control PTC electrothermal film, and a polyimide PI layer is packaged outside the self-temperature-control PTC electrothermal film.
In north of China, the problem of foundation settlement of high-speed railways in China is particularly obvious, in order to prevent accidents of railway foundations, stress monitoring of the high-speed railway foundations is particularly important, because the high-speed railway foundations have extremely high requirements on railway smoothness, monitoring devices cannot be oversized, and long-term monitoring needs to consider the influence on sensor sensitivity in the freeze thawing cycle process, the piezoelectric film pressure sensor 13 is arranged in the high-speed railway foundations 14, the electrode wires 9 of the flexible temperature sensor 7, the power supply wires 10 of the upper heating layer 2 and the lower heating layer 4 are all connected with an external temperature controller 15, solar batteries are used for supplying power, and the piezoelectric material film layer 3 is connected with the stress monitor 16.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (4)
1. The piezoelectric film pressure sensor is characterized by comprising an upper heat preservation layer, an upper heating layer, a piezoelectric material film layer, a lower heating layer and a lower heat preservation layer which are sequentially overlapped from top to bottom, wherein the piezoelectric material film layer is packaged between the upper heating layer and the lower heating layer and leads out piezoelectric signals through a signal wire;
the upper heat preservation layer and the lower heat preservation layer are both composed of a hard supporting framework and a flexible heat insulation filling material, the hard supporting framework is a hollowed grid supporting frame, the thickness of the hard supporting framework is the thickness of the upper heat preservation layer and the lower heat preservation layer, and the flexible heat insulation filling material is filled in the grids of the hard supporting framework;
The electrode wires of the flexible temperature sensor, the upper heating layer and the power supply wires of the lower heating layer are all connected with an external temperature controller;
the upper heating layer and the lower heating layer are respectively self-temperature-control PTC electrothermal films, and polyimide layers are packaged outside the self-temperature-control PTC electrothermal films;
The flexible temperature sensor is printed on the top surface or the bottom surface of the piezoelectric material film layer, and is distributed in an annular structure along the edge of the piezoelectric material film layer, and a high-heat-conductivity insulating isolation layer is arranged between the flexible temperature sensor and the piezoelectric material film layer, wherein the high-heat-conductivity insulating isolation layer is a silicon dioxide film or an aluminum oxide film.
2. The piezoelectric film pressure sensor suitable for different temperatures according to claim 1, wherein the grids of the rigid support framework are X-shaped crossed prismatic grids, the thickness of the rigid support framework is 0.8-1 mm, and the length and the width of each prismatic grid are 1-1.5 mm.
3. The piezoelectric film pressure sensor of claim 1, wherein said rigid support frame is made of polylactic acid or acrylonitrile-butadiene-styrene copolymer by 3D printing.
4. The piezoelectric film pressure sensor of claim 1, wherein said flexible heat insulating filling material is aerogel heat insulating material and is filled in the hard supporting framework by 3D printing method.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202411827818.0A CN119595153B (en) | 2024-12-12 | 2024-12-12 | Piezoelectric film pressure sensor suitable for different temperatures |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202411827818.0A CN119595153B (en) | 2024-12-12 | 2024-12-12 | Piezoelectric film pressure sensor suitable for different temperatures |
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| CN119595153A CN119595153A (en) | 2025-03-11 |
| CN119595153B true CN119595153B (en) | 2025-05-20 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106895924A (en) * | 2015-12-21 | 2017-06-27 | 中国电力科学研究院 | Flexible temperature and pressure sensor |
| CN115326248A (en) * | 2022-08-19 | 2022-11-11 | 同济大学 | Flexible sensor, lithium battery with self-heating and pressure sensing functions and manufacturing process of lithium battery |
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| JPH0529677A (en) * | 1991-07-23 | 1993-02-05 | Toyota Motor Corp | Controlling method for drive of piezoelectric laminate |
| JPH10256570A (en) * | 1997-03-14 | 1998-09-25 | Matsushita Electric Ind Co Ltd | Thin film device and thin film manufacturing method |
| JP2003121285A (en) * | 2001-10-19 | 2003-04-23 | Toyota Motor Corp | Pressure sensor |
| KR20030075894A (en) * | 2002-03-21 | 2003-09-26 | 주식회사 엘지이아이 | mold with multi-layer structure |
| JP2005038914A (en) * | 2003-07-16 | 2005-02-10 | Matsushita Electric Ind Co Ltd | Piezoelectric thin film forming equipment |
| JP3993857B2 (en) * | 2004-02-10 | 2007-10-17 | シチズンファインテック株式会社 | Pressure sensor |
| US8984951B2 (en) * | 2012-09-18 | 2015-03-24 | Kulite Semiconductor Products, Inc. | Self-heated pressure sensor assemblies |
| CN211901202U (en) * | 2020-03-24 | 2020-11-10 | 上海交通大学 | A blade surface piezoelectric film sensor mounting tool |
| CN114812375B (en) * | 2022-03-31 | 2024-03-26 | 东南大学 | PVDF-based carbon fiber composite piezoelectric sensor and preparation method thereof |
| CN115452076B (en) * | 2022-09-28 | 2024-10-01 | 浙江大学 | High-sensitivity thermal micro-flow sensor based on phase-change material |
| CN116035547A (en) * | 2023-01-19 | 2023-05-02 | 杭州电子科技大学 | Flexible pressure sensor based on microstructure piezoelectric film and preparation method thereof |
| CN117664401B (en) * | 2023-12-08 | 2024-04-26 | 浙江大学 | A flexible passive pressure sensor for railway monitoring |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106895924A (en) * | 2015-12-21 | 2017-06-27 | 中国电力科学研究院 | Flexible temperature and pressure sensor |
| CN115326248A (en) * | 2022-08-19 | 2022-11-11 | 同济大学 | Flexible sensor, lithium battery with self-heating and pressure sensing functions and manufacturing process of lithium battery |
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| CN119595153A (en) | 2025-03-11 |
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