CN119677201A - Image sensor and method for manufacturing the same - Google Patents
Image sensor and method for manufacturing the same Download PDFInfo
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Abstract
本申请涉及一种图像传感器及其制备方法。该图像传感器包括衬底、阵列排布的感光元件、滤光层、微透镜层与至少两层层叠的抗反射层，感光元件位于衬底的上方，滤光层位于感光元件的上方，滤光层包括第一滤光单元与第二滤光单元，第一滤光单元用于透过第一波段范围的光，第二滤光单元用于透过第二波段范围的光，微透镜层位于滤光层的上方，微透镜层包括第一微透镜与第二微透镜，第一微透镜位于第一滤光单元的上方，第二微透镜位于第二滤光单元的上方，至少两层层叠的抗反射层位于第一微透镜的上方。本申请，可以有针对性地在滤光层中某一个或某一部分滤光单元的上方制备抗反射层，单独且进一步提高某一个或某一部分滤光单元的光学效率。
The present application relates to an image sensor and a method for preparing the same. The image sensor includes a substrate, arrayed photosensitive elements, a filter layer, a microlens layer, and at least two stacked anti-reflection layers. The photosensitive element is located above the substrate, the filter layer is located above the photosensitive element, the filter layer includes a first filter unit and a second filter unit, the first filter unit is used to transmit light in a first wavelength range, the second filter unit is used to transmit light in a second wavelength range, the microlens layer is located above the filter layer, the microlens layer includes a first microlens and a second microlens, the first microlens is located above the first filter unit, the second microlens is located above the second filter unit, and at least two stacked anti-reflection layers are located above the first microlens. In the present application, an anti-reflection layer can be specifically prepared above one or a part of the filter units in the filter layer to individually and further improve the optical efficiency of one or a part of the filter units.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an image sensor and a preparation method thereof.
Background
In the related art, image sensors, such as a complementary metal oxide semiconductor image sensor (CMOS image sensor, abbreviated as CIS) and a charge coupled device (charge coupled device, abbreviated as CCD) image sensor, typically utilize a series of photodiodes formed within a pixel area array of a semiconductor substrate in order to sense when light affects the photodiodes. The complementary metal oxide semiconductor image sensor may be formed generally at either the front side illumination group or the back side illumination group. In the front side illumination group, light is incident from the "front" side of the image sensor, passing through the transfer transistor already formed thereon to the photodiode. In a back-side lighting group, a transfer transistor, a metal layer and a dielectric layer are formed on the back side of the substrate, the front side forms a photodiode, and light is allowed to pass from the "back" side of the substrate to the photodiode such that the light hits the photodiode before it reaches the transfer transistor, the dielectric layer, or the metal layer. The CIS may include a color filter (color filter), a micro lens (microlens), and an Anti-reflective coating (ARC) that allows light of different wavelength bands and more to reach the photodiode.
It is common practice to add an anti-reflective coating over the microlens by depositing an anti-reflective film over the microlens by chemical vapor deposition equipment, however, only one anti-reflective film can be prepared by chemical vapor deposition, and such a film can only increase the light transmission of each pixel and reduce the light reflection by a small margin to thereby increase the optical efficiency of the entire pixel.
In addition, in some application scenarios, for example, the optical quantum efficiency of the green filter film and the blue filter film in the color filter is higher, the quantum efficiency of the red filter film is lower, and an anti-reflection layer film is deposited above the micro lens, so that the image problems of inaccurate image color, unbalanced color, reduced signal to noise ratio of the red image, unbalanced brightness and contrast and the like cannot be solved.
Disclosure of Invention
The application aims to provide an image sensor and a preparation method thereof, wherein an anti-reflection layer can be prepared above one or a certain part of filter units in a filter layer in a targeted manner, the optical efficiency of one or a certain part of filter units can be independently and further improved, the color accuracy of an acquired image can be further improved, color unbalance is avoided, the signal to noise ratio of the image is improved, and the problems of unbalanced brightness and contrast of the image are avoided.
According to a first aspect of an embodiment of the present application, there is provided an image sensor including:
A substrate;
the photosensitive elements are arranged in an array manner and are positioned above the substrate;
The light-sensitive element comprises a photosensitive element, a light filtering layer, a first light filtering unit and a second light filtering unit, wherein the light filtering layer is positioned above the photosensitive element;
the micro-lens layer comprises a first micro-lens and a second micro-lens, wherein the first micro-lens is positioned above the first optical filtering unit, and the second micro-lens is positioned above the second optical filtering unit;
And at least two laminated anti-reflection layers are positioned above the first micro lenses and used for reducing the reflectivity of the light in the first wave band range.
In one embodiment, the refractive index of the anti-reflective layer decreases in sequence in a direction in which the substrate is directed toward the photosensitive element.
In one embodiment, the image sensor includes a first anti-reflection layer and a second anti-reflection layer stacked, the first anti-reflection layer being located above the first microlens, the second anti-reflection layer being located above the first anti-reflection layer;
The refractive index of the first anti-reflection layer to visible light is 1.4-1.5, the refractive index of the second anti-reflection layer to visible light is 1.25-1.26, and the wavelength range of the visible light is 400-700 nm.
In one embodiment, the refractive index of the first anti-reflective layer is 1.46 and the refractive index of the second anti-reflective layer is 1.25.
In one embodiment, the image sensor further comprises a first adhesion layer and a second adhesion layer;
The first adhesion layer is located above the first microlens, the first anti-reflection layer is located above the first adhesion layer, the second adhesion layer is located above the first anti-reflection layer, and the second anti-reflection layer is located above the second adhesion layer.
In one embodiment, the image sensor further comprises a first adhesion layer;
the first anti-reflection layer is further positioned above the second micro lens, and the first adhesion layer is positioned above the first anti-reflection layer;
the first anti-reflection layer comprises a first sub anti-reflection film and a second sub anti-reflection film, the first sub anti-reflection film is positioned above the first micro lens, and the second sub anti-reflection film is positioned above the second micro lens;
The first adhesive layer comprises a first adhesive film and a second adhesive film, the first adhesive film is positioned above the first sub-antireflection film, and the second adhesive film is positioned above the second sub-antireflection film;
The second anti-reflection layer is located above the first adhesive film.
According to a second aspect of an embodiment of the present application, there is provided a method for manufacturing an image sensor, including:
The method comprises the steps of providing a semiconductor device, wherein the semiconductor device comprises a substrate, photosensitive elements, a light filtering layer and a micro lens layer, the photosensitive elements are arranged in an array mode, the photosensitive elements are located above the substrate, the light filtering layer is located above the photosensitive elements, the light filtering layer comprises a first light filtering unit and a second light filtering unit, the first light filtering unit is used for transmitting light in a first wave band range, the second light filtering unit is used for transmitting light in a second wave band range, the micro lens layer is located above the light filtering layer, the micro lens layer comprises a first micro lens and a second micro lens, the first micro lens is located above the first light filtering unit, and the second micro lens is located above the second light filtering unit;
at least two stacked anti-reflection layers are formed over the first microlens for reducing reflectivity for light of the first band range.
In one embodiment, the image sensor includes a first anti-reflection layer and a second anti-reflection layer stacked, the first anti-reflection layer being located above the first microlens, the second anti-reflection layer being located above the first anti-reflection layer;
the forming at least two stacked anti-reflection layers over the first microlenses includes:
forming a sacrificial material layer above the microlens layer;
Forming a sacrificial layer opening on the sacrificial material layer to obtain a sacrificial layer, wherein the sacrificial layer opening is used for exposing the first micro lens;
Forming a first anti-reflection material layer, wherein the first anti-reflection material layer comprises a first anti-reflection layer and a first anti-reflection film layer to be removed, the first anti-reflection film layer to be removed is positioned above the sacrificial layer, and the first anti-reflection layer is positioned above the first micro lens;
Forming a second anti-reflection material layer, wherein the second anti-reflection material layer comprises a second anti-reflection layer and a second anti-reflection film layer to be removed, the second anti-reflection film layer to be removed is positioned above the first anti-reflection film layer to be removed, and the second anti-reflection layer is positioned above the first anti-reflection layer;
and stripping the sacrificial layer, the first anti-reflection film layer to be removed and the second anti-reflection film layer to be removed to obtain the image sensor.
In one embodiment, before the forming of the sacrificial material layer, the method further includes:
forming a first adhesive layer over the microlens layer, the first adhesive layer comprising a first adhesive film, the first adhesive film being over the first microlens;
The forming a sacrificial material layer includes:
Forming the sacrificial material layer over the first adhesion layer;
after forming a sacrificial layer opening on the sacrificial material layer, the sacrificial layer opening is used for exposing the first adhesive film;
After forming a first anti-reflection material layer, the first anti-reflection layer is positioned above the first adhesion film, and the first anti-reflection film layer to be removed is positioned above the sacrificial layer;
Before the forming of the second anti-reflection material layer, further comprising:
forming a second adhesion layer and a fourth adhesion layer over the first anti-reflection material layer, the second adhesion layer being over the first anti-reflection layer, the fourth adhesion layer being over the first anti-reflection film layer to be removed;
after the second anti-reflection material layer is formed, the second anti-reflection layer is positioned above the second adhesion layer, and the second anti-reflection film layer to be removed is positioned above the fourth adhesion layer;
And when the sacrificial layer, the first anti-reflection film layer to be removed and the second anti-reflection film layer to be removed are peeled off, the fourth adhesive layer is also peeled off.
In one embodiment, the image sensor includes a first anti-reflection layer and a second anti-reflection layer stacked, the first anti-reflection layer being located above the first microlenses and the second microlenses, the second anti-reflection layer being located above the first anti-reflection layer;
the forming at least two stacked anti-reflection layers over the first microlenses includes:
The first antireflection layer comprises a first sub antireflection film and a second sub antireflection film, wherein the first sub antireflection film is positioned above the first microlens, and the second sub antireflection film is positioned above the second microlens;
Forming a sacrificial material layer above the first anti-reflection layer;
forming a sacrificial layer opening on the sacrificial material layer to obtain a sacrificial layer, wherein the sacrificial layer opening is used for exposing the first sub anti-reflection film;
Forming a second anti-reflection material layer, wherein the second anti-reflection material layer comprises a second anti-reflection layer and a second anti-reflection film layer to be removed, the second anti-reflection film layer to be removed is positioned above the sacrificial layer, and the second anti-reflection layer is positioned above the first sub anti-reflection film;
And stripping the sacrificial layer and the second anti-reflection film layer to be removed to obtain the image sensor.
In one embodiment, before the forming of the sacrificial material layer, the method further includes:
forming a first adhesion layer over the first anti-reflection layer, the first adhesion layer comprising a first adhesion film, the first adhesion film being over the first sub-anti-reflection film;
The forming a sacrificial material layer includes:
Forming the sacrificial material layer over the first adhesion layer;
after forming a sacrificial layer opening on the sacrificial material layer, the sacrificial layer opening is used for exposing the first adhesive film;
after the second anti-reflection material layer is formed, the second anti-reflection layer is positioned above the first adhesion film, and the second anti-reflection film layer to be removed is positioned above the sacrificial layer.
Compared with the prior art, the application has the beneficial effects that: the image sensor comprises a substrate, an array-arranged photosensitive element, a filter layer, a microlens layer and at least two laminated anti-reflection layers, wherein the array-arranged photosensitive element is positioned above the substrate, the filter layer is positioned above the array-arranged photosensitive element, the filter layer comprises a first filter unit and a second filter unit, the first filter unit is used for transmitting light in a first wave band range, the second filter unit is used for transmitting light in a second wave band range, the microlens layer is positioned above the filter layer, the microlens layer comprises a first microlens and a second microlens, the first microlens is positioned above the first filter unit, the second microlens is positioned above the second filter unit, the at least two laminated anti-reflection layers are positioned above the first microlens and used for further reducing the reflectivity of the light in the first wave band range, that is, at least two layers of laminated anti-reflection layers are arranged above the first optical filter unit, and the at least two layers of laminated anti-reflection layers can further reduce the reflectivity of the light in the first wave band range, can improve the light transmittance of the light in the first wave band range, so that the optical efficiency of the first optical filter unit can be further improved, and further the optical efficiency of a photosensitive element for sensing the light in the first wave band range can be further improved, that is, at least two layers of laminated anti-reflection layers can be prepared above one or a certain part of the optical filter units in the optical filter layer in a targeted manner, the optical efficiency of one or a certain part of the optical filter units can be independently and further improved, further the color accuracy of the collected image can be improved, the color imbalance can be avoided, the signal to noise ratio of the image can be improved, the problem of unbalance of brightness and contrast of the image is avoided.
When the image sensor comprises a first anti-reflection layer and a second anti-reflection layer which are stacked, the first anti-reflection layer is positioned above the first micro lens, the second anti-reflection layer is positioned above the first anti-reflection layer, the refractive index of the first anti-reflection layer is 1.46, and the refractive index of the second anti-reflection layer is 1.25, the optical efficiency of the first optical filtering unit can be improved by about 3% -4%.
Drawings
Fig. 1 is a schematic diagram showing a structure of an image sensor according to an exemplary embodiment.
Fig. 2 is a schematic diagram showing a structure of an image sensor according to another exemplary embodiment.
Fig. 3 is a schematic diagram showing a structure of an image sensor according to another exemplary embodiment.
Fig. 4 is a flowchart illustrating a method of manufacturing an image sensor according to an exemplary embodiment.
Fig. 5 to 11 are schematic views illustrating intermediate structures generated in the process of manufacturing an image sensor.
Fig. 12 is a flowchart illustrating a method of manufacturing an image sensor according to an exemplary embodiment.
Fig. 13 to 15 are schematic views of intermediate structures generated in the process of manufacturing an image sensor.
Detailed Description
Unless defined otherwise, technical or scientific terms used in the specification and claims should be given the ordinary meaning as understood by one of ordinary skill in the art to which the invention pertains. In the following, specific embodiments of the present invention will be described with reference to the drawings, and it should be noted that in the course of the detailed description of these embodiments, it is not possible in the present specification to describe all features of an actual embodiment in detail for the sake of brevity. Modifications and substitutions of embodiments of the invention may be made by those skilled in the art without departing from the spirit and scope of the invention, and the resulting embodiments are also within the scope of the invention.
In the related art, when a bayer array (a color filter matrix) is used as a filter layer in a cmos image sensor, the optical quantum efficiency of a green filter unit and a blue filter unit is high, and the quantum efficiency of a red filter unit is low, which may cause image problems such as inaccurate color, unbalanced color, reduced signal-to-noise ratio of a red image, and unbalanced brightness and contrast of an image collected by the image sensor.
In order to solve the technical problems, the application provides an image sensor and a preparation method thereof, wherein an anti-reflection layer can be prepared above a certain or a certain part of filter units in a filter layer in a targeted manner, the optical efficiency of the certain or the certain part of filter units can be independently improved, the color accuracy of an acquired image can be further improved, color unbalance is avoided, the signal to noise ratio of the image is improved, and the problems of unbalanced brightness and contrast of the image are avoided.
It should be noted that, herein, the "pixel" refers to a photosensitive element, such as a photodiode.
An embodiment of the application provides an image sensor. The image sensor is used for collecting images and can be applied to electronic equipment with image collecting functions such as cameras, mobile phones, tablet computers, notebook computers, monitoring equipment and the like.
As shown in fig. 1, the image sensor includes a pixel region 100. The pixel region 100 may include photosensitive elements (not shown) arranged in an array and related circuits (not shown). The photosensitive elements arranged in an array can comprise a first photosensitive element and a second photosensitive element, and the first photosensitive element and the second photosensitive element can sense the visible light wave band.
In one embodiment, a red filter unit may be disposed above the first photosensitive element and only allows red light to pass through, so the first photosensitive element is used for sensing red light and is a red light photosensitive element. The second photosensitive element can comprise a first sub-photosensitive element and a second sub-photosensitive element, wherein a green filter unit is arranged above the first sub-photosensitive element and only allows green light to pass through, so that the first sub-photosensitive element is used for sensing green light and is a green light photosensitive element. The blue filter unit is arranged above the second sub-photosensitive element and only allows blue light to pass through, so that the second sub-photosensitive element is used for sensing the blue light and is a blue light photosensitive element.
As shown in fig. 2, the image sensor may include a substrate 1021, a first photosensitive element 1022, a second photosensitive element 1023, a filter layer CF, a microlens layer ML, a first adhesion layer 109, a first anti-reflection layer 108, a second adhesion layer 111, and a second anti-reflection layer 112. The structure including the substrate 1021, the first photosensitive element 1022 and the second photosensitive element 1023 may be referred to as the image sensor 102 of the filter layer CF to be processed.
As shown in fig. 2, the first photosensitive element 1022 and the second photosensitive element 1023 are disposed on the substrate 1021.
In one embodiment, the first photosensitive element 1022 may be a red light photosensitive element R for sensing red light, and the second photosensitive element 1023 may include the green light photosensitive element and the blue light photosensitive element described above.
As shown in fig. 2, the filter layer CF is disposed above the first photosensitive element 1022 and the second photosensitive element 1023, i.e., on the side of the first photosensitive element 1022 and the second photosensitive element 1023 away from the substrate 1021.
In one embodiment, the filter layer CF may include a first filter unit and a second filter unit, the first filter unit being adjacent to the second filter unit, the first filter unit being configured to transmit light in a first band range, the second filter unit being configured to transmit light in a second band range, and there being no overlap between the first band range and the second band range.
In one embodiment, the first filter unit is a red filter unit for transmitting red light, the second filter unit includes a green filter unit for transmitting green light and a blue filter unit for transmitting blue light.
As shown in fig. 1, in one embodiment, the filter layer CF may include red filter units 106, green filter units 104 and 105, and blue filter units 103 arranged in an array. The red filter unit 106 is for allowing only red light within a specified wavelength range to pass therethrough, the green filter units 104, 105 are for allowing only green light within a specified wavelength range to pass therethrough, and the blue filter unit 103 is for allowing only blue light within a specified wavelength range to pass therethrough. The red filter unit 106 is located above the red light sensitive element R, the green filter units 104, 105 are located above the green light sensitive element, and the blue filter unit 103 is located above the blue light sensitive element.
Of course, in other embodiments, the filter layer CF may also include other filter units, such as a cyan filter unit, a yellow filter unit, a magenta filter unit, a near infrared filter unit, a white filter unit, and a transparent filter unit. The cyan filter unit is used for transmitting cyan light, the yellow filter unit is used for transmitting yellow light, the magenta filter unit is used for transmitting magenta light, the near infrared filter unit is used for transmitting near infrared light, the white filter unit is used for reflecting visible light, and the transparent filter unit is used for transmitting visible light.
In one embodiment, as shown in FIG. 1, the filter layer CF employs a Bayer array (Bayer pattern) 101. In one embodiment, as shown in fig. 1, in bayer array 101, BGGR arrangement is adopted, that is, blue filter element 103 is in the first column of the first row, first green filter element 104 is in the second column of the first row, second green filter element 105 is in the first column of the second row, and red filter element 106 is in the second column of the second row. Wherein, the row direction is X direction, the column direction is Z direction, and X direction is perpendicular with Z direction. Accordingly, the green light sensing elements may include a first green light sensing element and a second green light sensing element, the first green filter unit 104 being located above the first green light sensing element, and the second green filter unit 105 being located above the second green light sensing element. The blue filter unit 103 is located above the blue light sensitive element, and the red filter unit 106 is located above the red light sensitive element R.
The bayer array 101 is described herein using BGGR arrangement as an example. In other embodiments, other arrangements may be employed for bayer array 101, such as GRBG, GBRG, RGGB, RYYB, RGBW, or RGBNIR. The GRBG is arranged such that a first green filter unit 104 is arranged in a first row and a first column, a red filter unit 106 is arranged in a first row and a second column, a blue filter unit 103 is arranged in a second row and a second green filter unit 105 is arranged in a second row and a second column. GBRG is arranged such that first green filter unit 104 is arranged in a first row and first column, blue filter unit 103 is arranged in a first row and second column, red filter unit 106 is arranged in a second row and first column, and second green filter unit 105 is arranged in a second row and second column. The RGGB is arranged with red filter units 106 in the first row and first column, first green filter units 104 in the first row and second column, second green filter units 105 in the second row and first column, and blue filter units 103 in the second row and second column. RYYB are arranged in a first row and a first column to form a red filter unit 106, a first row and a second column to form a first yellow filter unit, a second row and a first column to form a second yellow filter unit, and a second row and a second column to form a blue filter unit 103.RGBW is arranged in a way that red filter units are arranged in a first row and a first column, green filter units are arranged in a first row and a second column, blue filter units are arranged in a second row and a second column, and white filter units are arranged in a second row and a second column. RGBNIR are arranged in a first row and a first column as red filter units, a first row and a second column as green filter units, a second row and a first column as blue filter units, and a second row and a second column as near infrared filter units.
As shown in fig. 2, the microlens layer ML is located above the filter layer CF. The microlens layer ML includes a microlens array formed of a plurality of microlenses 107. The microlenses 107 are in one-to-one correspondence with the photosensitive elements. One microlens 107 is located above one photosensitive element. The microlens 107 is a convex lens for condensing light and improving the light efficiency of the photosensitive element.
As shown in fig. 2, the microlens layer ML includes a first microlens ML1 and a second microlens ML2, the first microlens ML1 is located above the first filter unit, and the second microlens ML2 is located above the second filter unit. For example, the first microlenses ML1 are located above the red filter unit 106, and the second microlenses ML2 are located above the second green filter unit 105.
As shown in fig. 2, the first adhesive layer 109 is located above the microlens layer ML. The first adhesive layer 109 is used to increase adhesion, the first adhesive layer 109 includes a resin material, and the material cannot be lithographically etched. The thickness of the first adhesive layer 109 is less than or equal to 10 nanometers, for example, the thickness of the first adhesive layer 109 is 6 nanometers, 8 nanometers, or 10 nanometers.
As shown in fig. 2, the first adhesive layer 109 may include a first adhesive film 1091 and a second adhesive film 1092, the first adhesive film 1091 being positioned above the first microlenses ML1, and the second adhesive film 1092 being positioned above the second microlenses ML 2.
As shown in fig. 2, the first anti-reflection layer 108 is located above the first adhesion layer 109. The first adhesive film 1091 is used to adhere the first anti-reflective layer 108. For example, the first anti-reflection layer 108 is located above the first adhesive film 1091 for reducing the reflectivity for red light.
As shown in fig. 2, a second adhesion layer 111 is located over the first anti-reflective layer 108, and the second anti-reflective layer 112 is located over the second adhesion layer 111.
The first anti-reflection layer 108 and the second anti-reflection layer 112 are located above the red filter unit 106, and the first anti-reflection layer 108 and the second anti-reflection layer 112 can improve the light transmittance, so that the optical efficiency of the red filter unit 106 can be improved.
In one embodiment, the material of the first anti-reflective layer 108 comprises silicon dioxide. The material of the second anti-reflective layer 112 comprises a siloxane polymer.
In one embodiment, when the first photosensitive element 1022 is the red light photosensitive element R, the refractive index of the first anti-reflection layer 108 for red light having a wavelength of 540nm is 1.46, and the extinction coefficient is 0.
In one embodiment, the refractive index of the first anti-reflection layer to visible light is 1.4-1.5, the refractive index of the second anti-reflection layer to visible light is 1.25-1.26, and the wavelength range of visible light is 400-700 nm. For example, the refractive index of the first anti-reflection layer may be 1.4, 1.46 or 1.5 for visible light, and the refractive index of the second anti-reflection layer may be 1.25, 1.255 or 1.26 for visible light.
In one embodiment, the refractive index of the first anti-reflection layer is 1.46, the refractive index of the second anti-reflection layer is 1.25, and the optical efficiency of the first optical filter unit can be improved by about 3% -4%. When only the first anti-reflection layer is arranged above the first light filtering unit, the optical efficiency of the first light filtering unit can be improved by about 2%. Therefore, when two anti-reflection layers are arranged above the first optical filtering unit, and the refractive indexes of the two anti-reflection layers are sequentially reduced in the direction that the substrate points to the photosensitive element, the optical efficiency of the first optical filtering unit can be further improved.
In other embodiments, the image sensor may include three, four, or more stacked anti-reflection layers over the first microlenses, each of which has a refractive index that decreases in sequence in a direction in which the substrate is directed toward the photosensitive element.
In one embodiment, the first anti-reflection layer 108 and the second anti-reflection layer 112 may be located only above the green filter unit 104, for improving the optical efficiency of the green filter unit 104.
In one embodiment, the first anti-reflection layer 108 and the second anti-reflection layer 112 may be located only above the green filter unit 105, for improving the optical efficiency of the green filter unit 105.
In one embodiment, the first anti-reflection layer 108 and the second anti-reflection layer 112 may be located only above the blue filter unit 103, for improving the optical efficiency of the blue filter unit 103.
In the embodiment of the application, at least two stacked anti-reflection layers are arranged above the first optical filtering unit, and the at least two stacked anti-reflection layers can further reduce the reflectivity of the light in the first wave band range, so that the optical efficiency of the first optical filtering unit can be further improved, the optical efficiency of a photosensitive element for sensing the light in the first wave band range can be further improved, that is, at least two stacked anti-reflection layers can be prepared above one or a certain part of the optical filtering units in the optical filtering layer in a targeted manner, the optical efficiency of one or a certain part of the optical filtering units can be independently and further improved, the color accuracy of the acquired image can be further improved, the color unbalance is avoided, the signal to noise ratio of the image is improved, and the problems of unbalanced brightness and contrast of the image are avoided.
Another embodiment of the present application provides an image sensor. Referring to fig. 3, in the present embodiment, the image sensor includes a substrate 1021, a first photosensitive element 1022, a second photosensitive element 1023, a filter layer CF, a microlens layer ML, a first anti-reflection layer 108, a first adhesion layer 109, and a second anti-reflection layer 112.
Wherein the substrate 1021, the first photosensitive element 1022, the second photosensitive element 1023, the filter layer CF, and the microlens layer ML are the same as those of the embodiment shown in fig. 2. Unlike the above embodiment, in the present embodiment, the first anti-reflection layer 108 is not only located above the first microlenses ML1, but also located above the second microlenses ML2, i.e. the first anti-reflection layer 108 covers the first filter unit and the second filter unit, i.e. the first anti-reflection layer may cover the filter layer. In this way, the optical efficiency of the entire filter layer can be improved.
As shown in fig. 3, a first adhesion layer 109 is located over the first anti-reflection layer 108. The first anti-reflection layer 108 includes a first sub-anti-reflection film 1081 and a second sub-anti-reflection film 1082, wherein the first sub-anti-reflection film 1081 is located above the first micro-lens ML1, and the second sub-anti-reflection film 1082 is located above the second micro-lens ML 2.
The first adhesion layer 109 includes a first adhesion film 1091 and a second adhesion film 1092, the first adhesion film 1091 is located above the first sub-antireflection film 1081, and the second adhesion film 1092 is located above the second sub-antireflection film 1082.
The second anti-reflection layer 112 is located above the first adhesive film 1091. I.e. the second anti-reflection layer 112 covers only the first filter unit. The second anti-reflection layer 112 is only used to improve the optical efficiency of the first filter unit.
In this embodiment, the first anti-reflection layer 108 covers the whole filter layer CF, and the second anti-reflection layer 112 only covers the first filter unit, so that not only the optical efficiency of the whole filter layer can be improved, but also the optical efficiency of the first filter unit can be further improved, further, the color accuracy of the collected image is improved, color imbalance is avoided, the signal to noise ratio of the image is improved, and the problem of unbalanced brightness and contrast of the image is avoided.
In this embodiment, the refractive index of the first anti-reflection layer is 1.46, and the refractive index of the second anti-reflection layer is 1.25. The optical efficiency of the first optical filtering unit can be improved by about 2%, and the optical efficiency of the first optical filtering unit can be improved by about 3% -4%.
In one embodiment, the second anti-reflection layer 112 may be located only above the green filter unit 104 for improving the optical efficiency of the green filter unit 104.
In one embodiment, the second anti-reflection layer 112 may be located only above the green filter unit 105 for improving the optical efficiency of the green filter unit 105.
In one embodiment, the second anti-reflection layer 112 may be located only above the blue filter unit 103 for improving the optical efficiency of the blue filter unit 103.
Another exemplary embodiment of the present application also provides a method for manufacturing an image sensor. The method for manufacturing an image sensor in this embodiment is used to manufacture the image sensor shown in fig. 2. As shown in fig. 4, in the present embodiment, the method for manufacturing the image sensor may include the following steps S401 to S408:
Step S401, providing a semiconductor device, wherein the semiconductor device comprises a substrate, photosensitive elements arranged in an array, a light filtering layer and a micro-lens layer, the photosensitive elements are located above the substrate, the light filtering layer is located above the photosensitive elements, the light filtering layer comprises a first light filtering unit and a second light filtering unit, the first light filtering unit is used for transmitting light in a first wave band range, the second light filtering unit is used for transmitting light in a second wave band range, the micro-lens layer is located above the light filtering layer, the micro-lens layer comprises a first micro-lens and a second micro-lens, the first micro-lens is located above the first light filtering unit, and the second micro-lens is located above the second light filtering unit.
In one embodiment, the first filter unit is adjacent to the second filter unit, and there is no overlap between the first band range and the second band range.
In this step, as shown in fig. 5 to 6, a semiconductor device is provided, the semiconductor device includes a substrate 1021, a first photosensitive element 1022, a second photosensitive element 1023, a filter layer CF, and a microlens layer ML, wherein the first photosensitive element 1022 is a red light photosensitive element R, the second photosensitive element 1023 includes a green light photosensitive element G and a blue light photosensitive element B, and the green light photosensitive element G includes a first green light photosensitive element G1 and a second green light photosensitive element G2.
As shown in fig. 5 to 6, the filter layer CF is located above the first photosensitive element 1022 and the second photosensitive element 1023. The filter layer CF includes red filter units 106, green filter units 104, 105, and blue filter units 103 arranged in an array. The green filter units 104, 105 include a first green filter unit 104 and a second green filter unit 105. The blue filter unit 103 is located above the blue light sensitive element, and the red filter unit 106 is located above the red light sensitive element R. The first green filter unit 104 is located above the first green light-sensing element, and the second green filter unit 105 is located above the second green light-sensing element.
As shown in fig. 5 to 6, the microlens layer ML is located above the filter layer CF. The microlens layer ML includes a microlens array formed of a plurality of microlenses 107. The microlenses 107 are in one-to-one correspondence with the photosensitive elements. One microlens 107 is located above one photosensitive element. The microlens 107 is a convex lens for condensing light and improving the light efficiency of the photosensitive element.
In one embodiment, step S401 may include the steps of first providing the image sensor 102 of the filter layer CF to be processed, i.e., the image sensor of the filter layer CF to be processed and the microlens layer ML. Then, the filter layer CF and the microlens layer ML are formed through photoresist coating, photolithography, developing, baking, and etching processes.
And step S402, forming a first adhesive layer above the microlens layer, wherein the first adhesive layer comprises a first adhesive film, and the first adhesive film is positioned above the first microlenses.
In this embodiment, the material of the first adhesive layer 109 may include a resin.
In this step, as shown in fig. 7, a first adhesive layer 109 may be formed over the microlens layer ML using a spin coating process, the first adhesive layer 109 covering the entire pixel region 100. The first adhesion layer 109 is used to increase adhesion and cannot be lithographically etched.
As shown in fig. 7, the first adhesive layer 109 includes a first adhesive film 1091 and a second adhesive film 1092, the first adhesive film 1091 being located above the first microlenses ML1, and the second adhesive film 1092 being located above the second microlenses ML 2.
In this embodiment, the thickness of the first adhesion layer 109 is less than or equal to 10 nanometers, for example, the thickness of the first adhesion layer 109 is 6 nanometers, 8 nanometers, or 10 nanometers.
In one embodiment, the first adhesion layer may not be formed over the microlens layer.
In step S403, a sacrificial material layer is formed over the first adhesion layer.
In this embodiment, the material of the sacrificial material layer includes photoresist. In one embodiment, the material of the sacrificial material layer may comprise a positive photoresist. Positive photoresists may include, but are not limited to, methyl amyl ketone (miscible in most organic solvents), propylene glycol methyl ether acetate, and phenolic derivatives. In another embodiment, the material of the sacrificial material layer may include a negative photoresist.
In this embodiment, the distance description is given taking an example in which the material of the sacrificial material layer includes a positive photoresist.
In this embodiment, a layer of sacrificial material may be formed over the first adhesion layer 109 using a spin coating process, the sacrificial material layer covering the entire pixel region 100.
In this embodiment, the thickness of the sacrificial material layer is 4-8 microns. For example, the thickness of the sacrificial material layer may be 4 microns, 5 microns, 7 microns, or 8 microns.
In another embodiment, if the first adhesion layer 109 is not formed over the microlens layer, a sacrificial material layer may be formed over the microlens layer.
And step S404, forming a sacrificial layer opening on the sacrificial material layer to obtain a sacrificial layer, wherein the sacrificial layer opening is used for exposing the first adhesive film.
In this embodiment, as shown in fig. 8, a photolithography process may be used to form a sacrificial layer opening 120 on the sacrificial material layer, resulting in a sacrificial layer 110. For example, a mask is placed on a side of the sacrificial material layer away from the substrate 1021, the mask including a shielding portion and a mask opening, the shielding portion being located above the second microlenses ML2, the mask opening being located above the first microlenses ML1, the mask opening being for exposing the sacrificial material layer above the first microlenses ML 1. And exposing the sacrificial material layer exposed by the mask opening by adopting an exposure process, namely, irradiating ultraviolet light to the mask plate, wherein the sacrificial material layer exposed by the mask opening is irradiated by the ultraviolet light, and the sacrificial material layer irradiated by the ultraviolet light is subjected to molecular cleavage. Then, the sacrificial material layer irradiated by ultraviolet light is removed by a developing process, that is, the exposed sacrificial material layer is removed by dissolving the sacrificial material layer subjected to molecular cleavage by a developing solution, and the unexposed sacrificial material layer is remained, thereby obtaining the sacrificial layer 110 with the sacrificial layer opening 120. The unexposed layer of sacrificial material covers the second adhesive film 1092. The sacrificial layer opening 120 is used to expose the first adhesive film 1091 of the adhesive layer 109, the first adhesive film 1091 is located above the first microlenses ML1, and the second adhesive film 1092 is located above the second microlenses ML 2.
In another embodiment, if a sacrificial material layer is formed over the microlens layer, after a sacrificial layer opening is formed on the sacrificial material layer, the sacrificial layer opening is used to expose the first microlenses ML1.
In step S405, a first anti-reflection material layer is formed, wherein the first anti-reflection material layer includes a first anti-reflection layer and a first anti-reflection film layer to be removed, the first anti-reflection film layer to be removed is located above the sacrificial layer, and the first anti-reflection layer is located above the first adhesive film.
In this step, as shown in fig. 9, the first anti-reflection material layer 18 may be formed by a chemical vapor deposition process, where the first anti-reflection material layer 18 includes a first anti-reflection layer 108 and a first anti-reflection film layer 113 to be removed, the first anti-reflection film layer 113 to be removed is located above the sacrificial layer 110, and the first anti-reflection layer 108 is located above the first adhesion film 1091.
In another embodiment, if a sacrificial material layer is formed over the microlens layer, after forming a sacrificial layer opening on the sacrificial material layer, the sacrificial layer opening is used to expose the first microlens ML1, and after forming a first anti-reflective material layer, the first anti-reflective material layer includes a first anti-reflective layer and a first anti-reflective film layer to be removed, the first anti-reflective film layer to be removed is located over the sacrificial layer, and the first anti-reflective layer is located over the first microlens ML 1.
In step S406, a second adhesion layer and a fourth adhesion layer are formed over the first anti-reflective material layer, the second adhesion layer being over the first anti-reflective layer, the fourth adhesion layer being over the first anti-reflective film layer to be removed.
In this step, as shown in fig. 10, a spin coating process may be used to form a second adhesion layer 111 and a fourth adhesion layer 114 over the first anti-reflection material layer, the second adhesion layer 111 being over the first anti-reflection layer 108, and the fourth adhesion layer 114 being over the first anti-reflection film layer 113 to be removed. The second adhesive layer 111 and the fourth adhesive layer 114 are similar to the first adhesive layer 109, and will not be described here.
In step S407, a second anti-reflection material layer is formed above the second adhesion layer and the fourth adhesion layer, the second anti-reflection material layer includes a second anti-reflection layer and a second anti-reflection film layer to be removed, the second anti-reflection layer is located above the second adhesion layer, and the second anti-reflection film layer to be removed is located above the fourth adhesion layer.
In this step, as shown in fig. 11, a spin coating process may be used to form a second anti-reflection material layer 19 over the second adhesion layer 111 and the fourth adhesion layer 114, where the second anti-reflection material layer 19 includes a second anti-reflection layer 112 and a second anti-reflection film layer 115 to be removed, the second anti-reflection layer 112 is located over the second adhesion layer 111, and the second anti-reflection film layer 115 to be removed is located over the fourth adhesion layer 115.
In step S408, the sacrificial layer, the first anti-reflection film layer to be removed, the second anti-reflection film layer to be removed and the fourth adhesion layer are peeled off to obtain the image sensor.
In this step, the sacrificial layer 110, the first to-be-removed anti-reflection film layer 113, the fourth adhesive layer 114 and the second to-be-removed anti-reflection film layer 115 may be peeled off by a film peeling process, to obtain the image sensor, that is, the sacrificial layer 110 contacting the first adhesive layer 109 is dissolved by a chemical reaction between a film peeling liquid and the sacrificial layer 110, then the dissolved substances are removed by pure water and spin-dried by high-speed rotation, and then the remaining sacrificial layer 110 over the entire pixel region 100 and the first to-be-removed anti-reflection film layer 113, the fourth adhesive layer 114 and the second to-be-removed anti-reflection film layer 115 over the same are peeled off.
In this example, the stripping solution may be a mixture of DMSO (dimethyl sulfoxide) and NMP (N-methyl-2-pyrrolidone) with a dissolving capacity for a variety of compounds. In other embodiments, the stripping solution may be other materials.
In this embodiment, when the sacrificial layer 110 and the first to-be-removed anti-reflection film layer 113, the fourth adhesive layer 114 and the second to-be-removed anti-reflection film layer 115 above the sacrificial layer are peeled off, the first anti-reflection layer 108, the second adhesive layer 111 and the second anti-reflection layer 112 above the first filter unit can be prevented from being peeled off together due to the presence of the first adhesive layer 109, so that the first anti-reflection layer 108, the second adhesive layer 111 and the second anti-reflection layer 112 are successfully remained above the first filter unit, and the purpose of individually increasing the optical efficiency of the first filter unit is achieved.
In this embodiment, a sacrificial layer is formed by forming a sacrificial layer over a first adhesive layer, and forming a sacrificial layer opening over the sacrificial layer to expose a first adhesive film, then forming a first anti-reflection material layer, wherein the first anti-reflection material layer includes a first anti-reflection layer and a first anti-reflection film layer to be removed, the first anti-reflection film layer is located over the sacrificial layer, the first anti-reflection layer is located over the first adhesive film, then forming a second adhesive layer and a fourth adhesive layer over the first anti-reflection layer, the second adhesive layer is located over the first anti-reflection layer, then forming a second anti-reflection material layer over the second adhesive layer and the fourth adhesive layer, the second anti-reflection material layer comprises a second anti-reflection layer and a second anti-reflection film layer to be removed, the second anti-reflection layer is positioned above the second adhesion layer, the second anti-reflection film layer to be removed is positioned above the fourth adhesion layer, finally, the sacrificial layer is peeled off, the first anti-reflection film layer to be removed, the second anti-reflection film layer to be removed and the fourth adhesion layer are peeled off together to obtain the image sensor, and therefore, the two anti-reflection layers are prepared only above the first optical filter unit, and the two anti-reflection layers can be prepared above one or a part of the optical filter units in the optical filter layer in a targeted manner.
Another exemplary embodiment of the present application also provides a method for manufacturing an image sensor. The method of manufacturing the image sensor in this embodiment is used to manufacture the image sensor shown in fig. 3. As shown in fig. 12, in the present embodiment, the method for manufacturing the image sensor may include the following steps S1201 to S1207:
Step S1201 provides a semiconductor device, which comprises a substrate, photosensitive elements arranged in an array, a filter layer and a microlens layer, wherein the photosensitive elements are positioned above the substrate, the filter layer is positioned above the photosensitive elements, the filter layer comprises a first filter unit and a second filter unit, the first filter unit is used for transmitting light in a first wave band range, the second filter unit is used for transmitting light in a second wave band range, the microlens layer is positioned above the filter layer, the microlens layer comprises a first microlens and a second microlens, the first microlens is positioned above the first filter unit, and the second microlens is positioned above the second filter unit.
This step is similar to step S401 described above, and will not be described again.
And step S1202, forming a first anti-reflection layer above the micro-lens layer, wherein the first anti-reflection layer comprises a first sub-anti-reflection film and a second sub-anti-reflection film, the first sub-anti-reflection film is positioned above the first micro-lens, and the second sub-anti-reflection film is positioned above the second micro-lens.
In this step, as shown in fig. 13, a chemical vapor deposition process may be used to form a whole first anti-reflection layer 108 over the microlens layer, where the first anti-reflection layer 108 includes a first sub-anti-reflection film 1081 and a second sub-anti-reflection film 1082, the first sub-anti-reflection film 1081 is located above the first microlens ML1, and the second sub-anti-reflection film 1082 is located above the second microlens ML 2.
In step S1203, a first adhesion layer is formed over the first anti-reflection layer, the first adhesion layer including a first adhesion film, the first adhesion film being over the first sub-anti-reflection film.
In this step, as shown in fig. 14, a spin coating process may be used to form a first adhesion layer 109 over the first anti-reflective layer, where the first adhesion layer 109 includes a first adhesion film 1091 and a second adhesion film 1092, the first adhesion film 1091 being over the first sub-anti-reflective film 1081, and the second adhesion film 1092 being over the second sub-anti-reflective film 1082.
In step S1204, a sacrificial material layer is formed over the first adhesion layer.
In this embodiment, the distance description is given taking an example in which the material of the sacrificial material layer includes a positive photoresist.
In this embodiment, a layer of sacrificial material may be formed over the first adhesion layer 109 using a spin coating process, the sacrificial material layer covering the entire pixel region 100.
In another embodiment, if the first adhesion layer 109 is not formed over the microlens layer, a sacrificial material layer may be formed over the microlens layer.
In step S1205, after forming the sacrificial layer opening on the sacrificial material layer, the sacrificial layer opening is used to expose the first adhesive film.
This step is similar to step S404 described above, and will not be described again.
In step S1206, a second anti-reflection material layer is formed, the second anti-reflection material layer includes a second anti-reflection layer and a second anti-reflection film layer to be removed, the second anti-reflection layer is located above the first adhesion film, and the second anti-reflection film layer to be removed is located above the sacrificial layer.
In this step, as shown in fig. 15, a spin-coating process may be used to form the second anti-reflection material layer 19, where the second anti-reflection material layer 19 includes a second anti-reflection layer 112 and a second anti-reflection film layer to be removed 115, the second anti-reflection layer 112 is located above the first adhesion film 1091, and the second anti-reflection film layer to be removed 115 is located above the sacrificial layer 110.
In another embodiment, if a sacrificial material layer is formed over the first anti-reflective layer, after forming a sacrificial layer opening over the sacrificial material layer, the sacrificial layer opening is used to expose the first sub-anti-reflective film, and after forming a second anti-reflective material layer, the second anti-reflective material layer includes a second anti-reflective layer and a second anti-reflective film layer to be removed, the second anti-reflective film layer to be removed is located over the sacrificial layer, and the second anti-reflective layer is located over the first sub-anti-reflective film.
In step S1207, the sacrificial layer and the second anti-reflection film layer to be removed are stripped to obtain the image sensor.
This step is similar to step S408 described above, and will not be described again.
In this embodiment, by forming a first anti-reflection layer over the microlens layer, the first anti-reflection layer including a first sub-anti-reflection film and a second sub-anti-reflection film, the first sub-anti-reflection film being located over the first microlens, the second sub-anti-reflection film being located over the second microlens, then forming a first adhesion layer over the first anti-reflection layer, the first adhesion layer including a first adhesion film, the first adhesion film being located over the first sub-anti-reflection film, then forming a sacrificial material layer over the first adhesion layer, then forming a sacrificial layer opening over the sacrificial material layer, the sacrificial layer opening being used to expose the first adhesion film, then forming a second anti-reflection material layer, the second anti-reflection material layer including a second anti-reflection layer and a second anti-reflection film layer to be removed, the second anti-reflection layer being located over the first adhesion film, the second anti-reflection film to be removed being located over the sacrificial layer, and finally stripping the sacrificial layer and the second anti-reflection film layer to be removed, the image sensor layer is obtained. Thus, not only is the preparation of the anti-reflection layer above the filter layer realized to improve the optical efficiency of the filter layer, but also the preparation of the anti-reflection layer above the first filter unit is realized, and the optical efficiency of the first filter unit is independently and further improved, so that the color accuracy of the acquired image can be improved, the color unbalance is avoided, the signal to noise ratio of the image is improved, and the problem of unbalanced brightness and contrast of the image is avoided.
In the present invention, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The term "plurality" refers to two or more, unless explicitly defined otherwise.
The embodiments are described above in order to facilitate the understanding and application of the present application by those of ordinary skill in the art. It will be apparent to those skilled in the art that various modifications can be readily made to these embodiments and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Accordingly, the present application is not limited to the embodiments herein, and those skilled in the art, based on the present disclosure, make improvements and modifications within the scope and spirit of the application.
Claims (10)
1. An image sensor is provided, which is capable of detecting a light source, characterized by comprising the following steps:
A substrate;
the photosensitive elements are arranged in an array manner and are positioned above the substrate;
The light-sensitive element comprises a photosensitive element, a light filtering layer, a first light filtering unit and a second light filtering unit, wherein the light filtering layer is positioned above the photosensitive element;
the micro-lens layer comprises a first micro-lens and a second micro-lens, wherein the first micro-lens is positioned above the first optical filtering unit, and the second micro-lens is positioned above the second optical filtering unit;
And at least two laminated anti-reflection layers are positioned above the first micro lenses and used for reducing the reflectivity of the light in the first wave band range.
2. The image sensor of claim 1, wherein the refractive index of the anti-reflective layer decreases in sequence in a direction in which the substrate is directed toward the photosensitive element.
3. The image sensor of claim 2, comprising a first anti-reflective layer and a second anti-reflective layer stacked, the first anti-reflective layer being over the first microlens, the second anti-reflective layer being over the first anti-reflective layer;
The refractive index of the first anti-reflection layer to visible light is 1.4-1.5, the refractive index of the second anti-reflection layer to visible light is 1.25-1.26, and the wavelength range of the visible light is 400-700 nm.
4. The image sensor of claim 3, further comprising a first adhesion layer and a second adhesion layer;
The first adhesion layer is located above the first microlens, the first anti-reflection layer is located above the first adhesion layer, the second adhesion layer is located above the first anti-reflection layer, and the second anti-reflection layer is located above the second adhesion layer.
5. The image sensor of claim 3, further comprising a first adhesion layer;
the first anti-reflection layer is further positioned above the second micro lens, and the first adhesion layer is positioned above the first anti-reflection layer;
the first anti-reflection layer comprises a first sub anti-reflection film and a second sub anti-reflection film, the first sub anti-reflection film is positioned above the first micro lens, and the second sub anti-reflection film is positioned above the second micro lens;
The first adhesive layer comprises a first adhesive film and a second adhesive film, the first adhesive film is positioned above the first sub-antireflection film, and the second adhesive film is positioned above the second sub-antireflection film;
The second anti-reflection layer is located above the first adhesive film.
6. A method of manufacturing an image sensor, comprising:
The method comprises the steps of providing a semiconductor device, wherein the semiconductor device comprises a substrate, photosensitive elements, a light filtering layer and a micro lens layer, the photosensitive elements are arranged in an array mode, the photosensitive elements are located above the substrate, the light filtering layer is located above the photosensitive elements, the light filtering layer comprises a first light filtering unit and a second light filtering unit, the first light filtering unit is used for transmitting light in a first wave band range, the second light filtering unit is used for transmitting light in a second wave band range, the micro lens layer is located above the light filtering layer, the micro lens layer comprises a first micro lens and a second micro lens, the first micro lens is located above the first light filtering unit, and the second micro lens is located above the second light filtering unit;
at least two stacked anti-reflection layers are formed over the first microlens for reducing reflectivity for light of the first band range.
7. The method of manufacturing an image sensor of claim 6, wherein the image sensor comprises a first anti-reflection layer and a second anti-reflection layer stacked, the first anti-reflection layer being located above the first microlens, the second anti-reflection layer being located above the first anti-reflection layer;
the forming at least two stacked anti-reflection layers over the first microlenses includes:
forming a sacrificial material layer above the microlens layer;
Forming a sacrificial layer opening on the sacrificial material layer to obtain a sacrificial layer, wherein the sacrificial layer opening is used for exposing the first micro lens;
Forming a first anti-reflection material layer, wherein the first anti-reflection material layer comprises a first anti-reflection layer and a first anti-reflection film layer to be removed, the first anti-reflection film layer to be removed is positioned above the sacrificial layer, and the first anti-reflection layer is positioned above the first micro lens;
Forming a second anti-reflection material layer, wherein the second anti-reflection material layer comprises a second anti-reflection layer and a second anti-reflection film layer to be removed, the second anti-reflection film layer to be removed is positioned above the first anti-reflection film layer to be removed, and the second anti-reflection layer is positioned above the first anti-reflection layer;
and stripping the sacrificial layer, the first anti-reflection film layer to be removed and the second anti-reflection film layer to be removed to obtain the image sensor.
8. The method of manufacturing an image sensor according to claim 7, wherein before the forming of the sacrificial material layer, further comprising:
forming a first adhesive layer over the microlens layer, the first adhesive layer comprising a first adhesive film, the first adhesive film being over the first microlens;
The forming a sacrificial material layer includes:
Forming the sacrificial material layer over the first adhesion layer;
after forming a sacrificial layer opening on the sacrificial material layer, the sacrificial layer opening is used for exposing the first adhesive film;
After forming a first anti-reflection material layer, the first anti-reflection layer is positioned above the first adhesion film, and the first anti-reflection film layer to be removed is positioned above the sacrificial layer;
Before the forming of the second anti-reflection material layer, further comprising:
forming a second adhesion layer and a fourth adhesion layer over the first anti-reflection material layer, the second adhesion layer being over the first anti-reflection layer, the fourth adhesion layer being over the first anti-reflection film layer to be removed;
after the second anti-reflection material layer is formed, the second anti-reflection layer is positioned above the second adhesion layer, and the second anti-reflection film layer to be removed is positioned above the fourth adhesion layer;
And when the sacrificial layer, the first anti-reflection film layer to be removed and the second anti-reflection film layer to be removed are peeled off, the fourth adhesive layer is also peeled off.
9. The method of manufacturing an image sensor of claim 6, wherein the image sensor comprises a first anti-reflective layer and a second anti-reflective layer stacked, the first anti-reflective layer being over the first microlens and the second microlens, the second anti-reflective layer being over the first anti-reflective layer;
the forming at least two stacked anti-reflection layers over the first microlenses includes:
The first antireflection layer comprises a first sub antireflection film and a second sub antireflection film, wherein the first sub antireflection film is positioned above the first microlens, and the second sub antireflection film is positioned above the second microlens;
Forming a sacrificial material layer above the first anti-reflection layer;
forming a sacrificial layer opening on the sacrificial material layer to obtain a sacrificial layer, wherein the sacrificial layer opening is used for exposing the first sub anti-reflection film;
Forming a second anti-reflection material layer, wherein the second anti-reflection material layer comprises a second anti-reflection layer and a second anti-reflection film layer to be removed, the second anti-reflection film layer to be removed is positioned above the sacrificial layer, and the second anti-reflection layer is positioned above the first sub anti-reflection film;
And stripping the sacrificial layer and the second anti-reflection film layer to be removed to obtain the image sensor.
10. The method of manufacturing an image sensor according to claim 9, wherein before the forming of the sacrificial material layer, further comprising:
forming a first adhesion layer over the first anti-reflection layer, the first adhesion layer comprising a first adhesion film, the first adhesion film being over the first sub-anti-reflection film;
The forming a sacrificial material layer includes:
Forming the sacrificial material layer over the first adhesion layer;
after forming a sacrificial layer opening on the sacrificial material layer, the sacrificial layer opening is used for exposing the first adhesive film;
after the second anti-reflection material layer is formed, the second anti-reflection layer is positioned above the first adhesion film, and the second anti-reflection film layer to be removed is positioned above the sacrificial layer.
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