CN119730415B - Photosensitive material detector and pixel structure for flexible infrared image sensor - Google Patents
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
本发明涉及用于柔性红外图像传感器的光敏材料探测器及像素结构，包括：红外感光材料结构、绝缘层和柔性衬底；其中，所述柔性衬底上方设置有所述绝缘层；所述绝缘层上方设置有红外感光材料结构；所述红外感光材料结构为肖特基异质结；所述肖特基异质结由六方氮化硼、转角石墨烯和二维材料结构形成；所述六方氮化硼、转角石墨烯和二维材料结构均与电极相连接。本发明的有益效果是：本发明在像素结构中引入转角石墨烯，由于转角石墨烯含有零带隙且转角石墨烯的功函数可以通过电压调节，该像素结构能够响应非常宽的波长范围，并且可以实现对响应波长的选择性。
The present invention relates to a photosensitive material detector and a pixel structure for a flexible infrared image sensor, comprising: an infrared photosensitive material structure, an insulating layer and a flexible substrate; wherein the insulating layer is arranged above the flexible substrate; the infrared photosensitive material structure is arranged above the insulating layer; the infrared photosensitive material structure is a Schottky heterojunction; the Schottky heterojunction is formed by hexagonal boron nitride, twisted graphene and a two-dimensional material structure; the hexagonal boron nitride, twisted graphene and the two-dimensional material structure are all connected to electrodes. The beneficial effects of the present invention are: the present invention introduces twisted graphene into the pixel structure, and since the twisted graphene contains a zero band gap and the work function of the twisted graphene can be adjusted by voltage, the pixel structure can respond to a very wide wavelength range and can achieve selectivity for the response wavelength.
Description
Technical Field
The invention relates to the technical field of pixel structures, in particular to a photosensitive material detector for a flexible infrared image sensor and a pixel structure.
Background
The infrared image sensor is used for detecting infrared radiation of a target object and converting the temperature distribution image of the surface of the target object into a video image through means of photoelectric conversion, electric signal processing and the like. The basic principle of the infrared image sensor is that infrared radiation emitted by an object is focused on a flexible infrared detector through an optical lens, the detector converts the infrared radiation into an electric signal, a hardware circuit processes the electric signal, and data emitted by the detector is translated into an image which can be viewed on a viewfinder, a standard video monitor or an LCD display screen.
The infrared photoelectric detector utilizes photovoltaic effect generated by light to convert infrared light signals into electric signals. Minority carrier extraction based on reverse bias junctions (PN junctions, schottky junctions). The illumination generates unbalanced carriers, which are drifted by the built-in electric field and the reverse bias electric field to form a large reverse current, i.e., photocurrent. The photocurrent is directly proportional to the incident light intensity and is closely related to the frequency of the incident light, so that the infrared signal can be converted into an electric signal, and the purpose of light detection is achieved.
The avalanche effect is that under the action of a strong electric field, carriers in a semiconductor are heated by the electric field, and part of the carriers can obtain energy high enough, and the carriers can transfer energy to electrons on a valence band through collision to ionize the electrons, so that electron-hole pairs are generated, and the process is called collision ionization. The generated electron-hole pairs move in opposite directions in the electric field, and are heated by the electric field to generate new electron-hole pairs. In this way, a large number of carriers can be multiplied, a phenomenon known as avalanche multiplication.
The current commercialized infrared and terahertz detectors are based on photosensitive materials such as silicon (Si), germanium (Ge), indium gallium arsenide (InGaAs), tellurium cadmium mercury (HgCdTe) and the like, cannot respond to very wide wavelength, has weak infrared absorption capacity, and is difficult to meet the requirements of various fields on the detectors at present; commercial wearable devices are made of discrete photodiodes of rigid semiconductor material that are not tightly fitted to the skin, thereby reducing the accuracy of the data and limiting the body position of the wearable device.
CN202210277241.5 discloses a novel pixel structure for an infrared image sensor and a manufacturing method, the invention relates to a novel pixel structure for an infrared image sensor, comprising the steps of active region photoetching positioning; the method comprises the steps of forming an insulating isolation groove STI at a shallow trench, forming an N well and a P well, forming a grid electrode, forming a shallow doped drain region LDD, forming a grid electrode side wall, forming a source region and a drain region of a novel pixel structure, and covering a metal wire and a passivation layer. According to the invention, graphene is used as a photosensitive material, and the photosensitive material made of graphene can generate photoelectric response and can respond to very wide wavelength because of the scattering and multiplication effects of hot electrons in the graphene and the energy band structure of zero band gap of the graphene; the invention optimizes the existing infrared image sensor with low cost and simplified process, expands the response wavelength of the silicon CMOS image sensor to be farther in near infrared, and enables the response wavelength to be electrically adjustable.
However, the photosensitive material of the prior art pixel structure does not have a schottky barrier with adjustable gate voltage, so that the absorption wavelength and photocurrent cannot be adjusted by the gate voltage. Furthermore, there is no addition of ballistic avalanche effect in the prior art pixel structure, and the gain and sensitivity are limited. Furthermore, prior art pixel structures contain rigid materials, resulting in a failure to fit tightly to the skin, thereby reducing the accuracy of the data and limiting the body position of the wearable device.
Disclosure of Invention
The invention aims at overcoming the defects of the prior art and provides a photosensitive material detector and a pixel structure for a flexible infrared image sensor.
In a first aspect, a photosensitive material detector for a flexible infrared image sensor is provided, comprising an infrared photosensitive material structure, an insulating layer, and a flexible substrate;
The flexible substrate comprises a flexible substrate, wherein an insulating layer is arranged above the flexible substrate, an infrared sensing material structure is arranged above the insulating layer, the infrared sensing material structure is a Schottky heterojunction, the Schottky heterojunction is formed by hexagonal boron nitride, corner graphene and a two-dimensional material structure, and the hexagonal boron nitride, the corner graphene and the two-dimensional material structure are all connected with an electrode.
Preferably, the two-dimensional material structure is integrated with semiconductor quantum dots.
Preferably, the material of the flexible substrate is selected from any one of polyvinyl alcohol, polyester, polyimide or polyethylene naphthalate.
Preferably, in the infrared photosensitive material structure, the corner graphene is a photosensitive material of infrared light, and the hexagonal boron nitride is a protective material and a gate dielectric.
Preferably, the fermi level of the corner graphene is adjusted by a gate voltage, and the barrier height of the schottky heterojunction is adjustable.
Preferably, the electrodes are flexible interdigital electrodes.
In a second aspect, there is provided a method for manufacturing a photosensitive material detector for a flexible infrared image sensor as described in any one of the first aspects, comprising:
step 1, preparing an insulating layer of a flexible substrate;
step 2, spin coating photoresist on the flexible substrate insulating layer, and carrying out photoetching and developing of gold electrode patterns on the photoresist coating; placing the developed substrate into electron beam evaporation equipment, respectively carrying out vapor deposition growth of metal chromium and gold electrodes, and removing photoresist to form electrodes;
step 3, forming a two-dimensional material structure on one side electrode of the flexible substrate insulating layer;
step 4, corner graphene is formed on a two-dimensional material structure, and an overlapping area exists between the two-dimensional material structure and the corner graphene;
Step 5, spin coating photoresist on the surface of the corner graphene, and carrying out photoetching and developing of a gold electrode pattern on the photoresist coating; placing the developed substrate into electron beam evaporation equipment, respectively carrying out vapor deposition growth of metal chromium and gold electrodes, and removing photoresist to form electrodes;
step 6, hexagonal boron nitride is formed on the corner graphene, and an overlapping area is formed between the hexagonal boron nitride and the corner graphene;
And 7, spin-coating photoresist on the hexagonal boron nitride, performing photoetching and developing of a gold electrode pattern on the photoresist coating, putting the developed substrate into electron beam evaporation equipment, respectively performing vapor deposition growth on metal chromium and a gold electrode, and removing the photoresist to form an electrode.
Preferably, in step 2, step 5 and step 7, the spin-coating photoresist includes a low-rotation-speed spin-coating stage and a high-rotation-speed spin-coating stage, and the duration of the high-rotation-speed spin-coating stage is longer than that of the low-rotation-speed spin-coating stage.
In a third aspect, a pixel structure of a photosensitive material for a flexible infrared image sensor is provided, which includes a detector, a reset transistor T1, an amplifying transistor T2 and a switching transistor T3 according to any one of the first aspect, where the detector is connected to the reset transistor T1, the amplifying transistor T2 and the switching transistor T3. In a fourth aspect, a flexible infrared image sensor is provided, including the pixel structure of the photosensitive material of the third aspect and a readout circuit corresponding to the pixel structure of the photosensitive material, where the readout circuit is connected to the pixel structure of the photosensitive material.
The beneficial effects of the invention are as follows:
1. The invention uses the Schottky heterojunction formed by the hexagonal boron nitride, the corner graphene and the two-dimensional material structure as the infrared sensing material, solves the problem of narrow photoelectric response bandwidth of the pixel structure of the infrared image sensor, further improves the speed and the sensitivity, and realizes the photoinduced current electric-induced adjustability.
2. According to the invention, the wearable equipment of the infrared image sensor is realized by using the flexible material, and the problem of lack of accuracy of data caused by poor skin fit is solved.
3. According to the invention, corner graphene is introduced into a pixel structure, and the corner graphene contains zero band gap, and the work function of the corner graphene can be adjusted by voltage, so that the pixel structure can respond to a very wide wavelength range, and the selectivity of response wavelength can be realized.
Drawings
FIG. 1 is a schematic diagram of a photosensitive material detector for a flexible infrared image sensor;
FIG. 2 is a schematic diagram of SEM test results of graphene and two-dimensional material structures;
FIG. 3 is an I-V graph of a composite material composed of graphene and a two-dimensional material structure;
FIG. 4 is a schematic diagram of a pixel structure of a photosensitive material for a flexible infrared image sensor;
The reference numerals illustrate a flexible substrate 1, an insulating layer 2, hexagonal boron nitride 3, corner graphene 4, a two-dimensional material structure 5 and an electrode 6.
Detailed Description
The invention is further described below with reference to examples. The following examples are presented only to aid in the understanding of the invention. It should be noted that it will be apparent to those skilled in the art that modifications can be made to the present invention without departing from the principles of the invention, and such modifications and adaptations are intended to be within the scope of the invention as defined in the following claims.
Example 1:
The corner graphene is used as a zero-band-gap semiconductor, is an ideal model structure for researching a carrier relaxation channel, and has low carrier relaxation efficiency in a traditional semiconductor. These scattering channels bridge the valence and conduction band carrier multiplication, a process that creates multiple charges by absorbing a single photon. The corner graphene has a remarkable gapless and linear energy band structure, and opens a new carrier relaxation channel connecting a valence band and a conduction band. These auger scattering processes alter the number of charge carriers and may result in significant multiplication of optically excited carriers in corner graphene.
In order to solve the problems in the prior art, as shown in fig. 1, the corner graphene is introduced, can absorb 1550nm light, has adjustable fermi level, and realizes low current of a PN junction of the corner graphene.
Specifically, the embodiment 1 of the application provides a photosensitive material detector for a flexible infrared image sensor, which comprises an infrared photosensitive material structure, an insulating layer 2 and a flexible substrate 1;
The flexible substrate comprises a flexible substrate 1, an insulating layer 2, an infrared sensing material structure, a Schottky heterojunction, a grid voltage and an electrode 6, wherein the insulating layer 2 is arranged above the flexible substrate 1, the infrared sensing material structure is arranged above the insulating layer 2, the Schottky heterojunction is formed by hexagonal boron nitride 3, corner graphene 4 and a two-dimensional material structure 5, a wider absorption wave band can be achieved, the Schottky barrier can be adjusted by the grid voltage applied to the Schottky heterojunction, and accordingly photocurrent is adjusted, and the hexagonal boron nitride 3, the corner graphene 4 and the two-dimensional material structure 5 are all connected with the electrode 6.
The avalanche photomultiplier formed by corner graphene-two-dimensional material contains a ballistic avalanche effect, the two-dimensional material structure is of the silicon graphene, and semiconductor quantum dots are integrated, so that the sensitivity and the gain are improved, and dark current is reduced.
The flexible substrate 1 is made of any one of polyvinyl alcohol (PVA), polyester (PET), polyimide (PI) or polyethylene naphthalate (PEN), paper sheets, textile materials and the like, has a bendable and stretchable characteristic, and can improve the skin fit degree and data accuracy of the wearable device. Further, by attaching the inorganic/organic device to the flexible substrate 1, the thin film electronic device can be bent, folded, twisted, compressed, stretched, or even deformed into an arbitrary shape, while maintaining high photoelectric performance, reliability, and integration.
In the infrared sensing material structure, as shown in fig. 2 and 3, the corner graphene 4 is a photosensitive material of infrared light and is a full spectrum material, and can absorb light with full wavelength. Only the corner graphene 4 of a plurality of atomic layers (about 0.34 nm of 1 layer) and the two-dimensional material structure (about 0.4 nm of 1 layer) have the advantages of thinness, small capacitance and quick response, and are the preferred photosensitive materials of the high-speed avalanche photodetector, and the hexagonal boron nitride 3 is a protective material and a grid dielectric.
And moreover, the fermi level of the corner graphene 4 can be adjusted through the grid voltage, so that the photo-generated current can be adjusted, the dark current can be reduced, the noise is smaller, and the sensitivity is higher. The prior art infrared sensing material cannot adjust its fermi level in real time by voltage, and thus cannot adjust its schottky barrier, so that the photo-generated current cannot be adjusted in real time. Furthermore, the scattering and multiplication of hot electrons in the corner graphene 4, as well as its zero bandgap band structure, are responsible for the response to infrared light. The infrared sensitive material in the prior art only responds to infrared light through the intrinsic band gap size, and the corner graphene 4 improves infrared photo-electrons with low energy to the detectable energy height of the device through the scattering effect of electrons, and has the effect of current enhancement.
The electrode 6 is a flexible interdigital electrode, PI and PET are respectively taken as substrates, and the manufactured electrode 6 can be closely attached to human skin by utilizing the flexible and stretchable characteristics of PI/PET.
Example 2:
on the basis of embodiment 1, embodiment 2 of the present application provides a method for manufacturing a photosensitive material detector for a flexible infrared image sensor, including:
step 1, preparing an insulating layer 2 of a flexible substrate 1;
Step2, spin coating photoresist on the flexible substrate insulating layer 2, and carrying out photoetching and developing of a gold electrode pattern on the photoresist coating, putting the developed substrate into electron beam evaporation equipment, respectively carrying out vapor deposition growth of metal chromium and a gold electrode, and removing the photoresist to form an electrode 6;
Step 3, forming a two-dimensional material structure 5 on one side electrode of the flexible substrate insulating layer 2;
Step 4, forming corner graphene 4 on a two-dimensional material structure 5, wherein an overlapping area exists between the two-dimensional material structure 5 and the corner graphene 4;
step 5, spin coating photoresist on the surface of the corner graphene 4, and carrying out photoetching and developing of a gold electrode pattern on the photoresist coating, putting the developed substrate into electron beam evaporation equipment, respectively carrying out vapor deposition growth of metal chromium and a gold electrode, and removing the photoresist to form an electrode 6;
and 6, forming hexagonal boron nitride 3 on the corner graphene 4, wherein the hexagonal boron nitride 3 and the corner graphene 4 form an overlapping region.
Step 7, spin coating photoresist on the hexagonal boron nitride 3, and carrying out photoetching and developing of a gold electrode pattern on the photoresist coating, putting the developed substrate into electron beam evaporation equipment, respectively carrying out vapor deposition growth of metal chromium and a gold electrode, and removing the photoresist to form an electrode 6;
in the steps 2, 5 and 7, the spin-coating photoresist comprises a low-rotation-speed spin-coating stage and a high-rotation-speed spin-coating stage, wherein the duration of the high-rotation-speed spin-coating stage is longer than that of the low-rotation-speed spin-coating stage.
Specifically, the method provided in this embodiment is a preparation method corresponding to the detector provided in embodiment 1, so that the parts in this embodiment that are the same as or similar to those in embodiment 1 may be referred to each other, and will not be described in detail in this disclosure.
Example 3:
On the basis of embodiment 1, the embodiment 3 of the application provides a photosensitive material pixel structure for a flexible infrared image sensor, which is shown in fig. 4 and comprises a corner graphene-two-dimensional material avalanche photomultiplier P1 (namely a detector in embodiment 1), a reset transistor T1, an amplifying transistor T2 and a switching transistor T3, wherein the corner graphene-two-dimensional material avalanche photomultiplier P1 comprises boron nitride, corner graphene, a two-dimensional material heterojunction and a flexible substrate, the corner graphene and the two-dimensional material structure form a Schottky heterojunction, and the boron nitride, the corner graphene and the two-dimensional material heterojunction are used as pixels to be bonded with the CMOS image sensor. The corner graphene-two-dimensional material avalanche photomultiplier P1 is characterized in that an insulating isolation groove STI, an N well, a P well, a grid electrode and a shallow doped drain region LDD at a shallow channel are respectively arranged on a substrate of the corner graphene-two-dimensional material avalanche photomultiplier P1, a pair of grid electrode side walls are arranged around the grid electrode, a source region of a novel pixel structure is arranged in the N well, a drain region of the novel pixel structure is arranged in the P well, the insulating isolation groove STI, the N well, the P well, the grid electrode, the shallow doped drain region LDD, the source region and the drain region are connected through metal wires to form a circuit, and a passivation layer is covered on the surface of the circuit.
In this embodiment, the same or similar parts as those in embodiment 1 may be referred to each other, and will not be described in detail in the present disclosure.
Example 4:
On the basis of embodiment 3, embodiment 4 of the present application provides a method for manufacturing a pixel structure of a photosensitive material for a flexible infrared image sensor, including:
Step 1, preparing a flexible substrate 1, growing a layer of hexagonal boron nitride (h-BN) on the surface of the flexible substrate 1, and defining an active region by a photoetching technology, wherein the active region is a part under the protection of a photoresist, and the active region is a device working region.
In step 1, the embodiment of the present application adopts polyimide material to prepare the flexible substrate 1.
And step 2, etching a groove in the area which is not covered by the photoresist, filling hexagonal boron nitride in the groove, chemically and mechanically polishing and flattening the surface of the hexagonal boron nitride, and finally removing the hexagonal boron nitride on the surface of the active area, thereby forming a shallow trench isolation area (shallow trench isolation, STL) in the original groove.
Specifically, shallow trenches are formed by dry etching technology, the part covered by the photoresist is protected, the area without photoresist protection is etched to form shallow grooves, and finally the photoresist is removed. In addition, through the shallow trench isolation region, each device in the integrated circuit plays a role, and mutual influence is blocked.
And 3, forming a P well and an N well in a specific area, depositing hexagonal boron nitride and heavily Doped polysilicon on the surface, defining a gate position through photoetching, obtaining a gate after dry etching, and forming a shallow Doped Drain (LDD) in the P well and the N well respectively through ion implantation.
The formation process of the P well and the N well specifically comprises exposing the region to be implanted with ions by using a photolithography technique, covering other regions with photoresist, implanting boron (B) ions into the surface of the flexible substrate 1, and forming the P well in the region without photoresist protection. Ion implantation is then performed with a smaller energy in the channel region to adjust the turn-on voltage. And finally removing the photoresist. In the same way as the above steps, phosphorus (P) ions are implanted into a specific region to form an N-well.
Further, after the gate electrode is formed, arsenic (As) is ion-implanted into the P-well and boron fluoride (BF 2) is ion-implanted into the N-well to form an LDD, using the steps of forming the N-well and the P-well. LDD is used to reduce Hot carrier effects (Hot CARRIER EFFECT).
And 4, forming a grid side wall around the grid by dry etching, and forming a source region and a drain region by ion implantation in the P well and the N well.
Specifically, after the grid electrode and the shallow doped drain are formed, a layer of hexagonal boron nitride is deposited on the surface of the silicon wafer by chemical vapor deposition, and then dry etching is carried out, and photoetching and direct etching are not needed before etching. The features of deposition height difference and dry etching anisotropy are used to leave a pair of sidewalls around the gate to isolate the source (drain) from the gate.
In addition, as in the above steps of forming the N-well and the P-well, high concentration of As is implanted in the N-well and high concentration of BF2 is implanted in the P-well, thereby forming source and drain regions of the device. Through the steps, the NMOS and the PMOS are manufactured, and the following steps manufacture the connecting lines between the devices so as to complete the functions of the whole integrated circuit.
And 5, manufacturing metal connecting wires by using deposition, dry etching, photoetching and chemical mechanical polishing technologies, connecting the whole circuit, and covering a passivation layer on the surface of the whole circuit to prevent mechanical scratches and contamination on the surface.
Specifically, the method provided in this embodiment is a preparation method corresponding to the pixel structure provided in embodiment 3, so that the portions in this embodiment that are the same as or similar to those in embodiment 3 may be referred to each other, and will not be described in detail in this disclosure.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202510237717.6A CN119730415B (en) | 2025-03-03 | 2025-03-03 | Photosensitive material detector and pixel structure for flexible infrared image sensor |
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