CN119894350A - Manufacturing method of magnetoresistive film stack and magnetoresistive sensor - Google Patents
Manufacturing method of magnetoresistive film stack and magnetoresistive sensor Download PDFInfo
- Publication number
- CN119894350A CN119894350A CN202311386899.0A CN202311386899A CN119894350A CN 119894350 A CN119894350 A CN 119894350A CN 202311386899 A CN202311386899 A CN 202311386899A CN 119894350 A CN119894350 A CN 119894350A
- Authority
- CN
- China
- Prior art keywords
- layer
- free
- free layer
- magnetoresistive
- film stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
Abstract
The application relates to the field of magnetic storage, in particular to a manufacturing method of a magnetoresistive film stack and a magnetoresistive sensor, wherein a reference layer is arranged, and a barrier layer is arranged on the surface of the reference layer; and performing shape anisotropy treatment on the free layer to reduce an included angle between the magnetization direction of the free layer and the plane of the free layer to be within a first threshold value, thereby obtaining the magnetoresistive film stack. According to the application, the magnetization direction of the free layer is changed into inclined arrangement by controlling the thickness of the free layer, the anisotropic field of the free layer under the inclined magnetic moment is greatly reduced, so that the sensitivity of the free layer is greatly improved, and meanwhile, on the basis of the magneto-resistance film stack of the free layer with the inclined magnetic moment, the magnetization direction of the free layer is arranged along the long axis in the plane by means of shape anisotropy, so that linear output is realized.
Description
Technical Field
The invention relates to the field of magnetic storage, in particular to a manufacturing method of a magnetoresistive film stack and a magnetoresistive sensor.
Background
Magnetoresistive sensors (mainly giant magnetoresistive sensors and tunneling magnetoresistive sensors) are widely used as an emerging sensor in consumer electronics, industrial electronics, etc. The sensor detects the magnetic field by utilizing the fact that the resistance of the magnetic multilayer film can change along with the size and the angle of the magnetic field, and has the advantages of high sensitivity, small volume, low power consumption and the like.
One application scenario of the magnetoresistive sensor is to detect a z-axis magnetic field, which becomes an alternative to a Hall (Hall) sensor. To achieve a linear output, the reference layer magnetization direction needs to be fixed in the out-of-plane direction (z-axis) and the free layer magnetization is oriented in the in-plane direction (x-y plane). However, in practical implementation, a thicker free layer is usually prepared, so that the magnetic moment of the free layer is kept in the in-plane direction when the free layer is in the preparation state, and although the cross structure has z-axis sensitivity, because the free layer with the magnetization direction being in-plane has a larger anisotropy field, a larger out-of-plane magnetic field (more than 200 mT) is required to pull the free layer to rotate in the out-of-plane direction, so that higher sensitivity cannot be kept.
Therefore, how to find a method for improving the sensitivity of the magnetoresistive sensor while maintaining the linear output is a problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a manufacturing method of a magnetoresistive film stack and a magnetoresistive sensor, which are used for solving the problem that the sensitivity of the magnetoresistive sensor cannot be improved while the linear output is maintained in the prior art.
In order to solve the above technical problems, the present invention provides a method for manufacturing a magnetoresistive film stack, including:
Setting a reference layer and setting a barrier layer on the surface of the reference layer;
A free layer with an inclined magnetic moment thickness is arranged on the surface of the barrier layer, and the magnetization direction of the free layer under the inclined magnetic moment is not in the plane of the free layer;
and carrying out shape anisotropy treatment on the free layer to reduce an included angle between the magnetization direction of the free layer and the plane of the free layer to be within a first threshold value, thereby obtaining the magnetoresistive film stack.
Optionally, in the manufacturing method of the magnetoresistive film stack, the free layer includes a first free sub-layer, a ferromagnetic coupling layer, and a second free sub-layer, and the free layer having an inclined magnetic moment thickness on the surface of the barrier layer includes:
Disposing the first free sub-layer on the surface of the barrier layer;
Disposing the ferromagnetic coupling layer on the first free sublayer surface;
and arranging the second free sub-layer on the surface of the ferromagnetic coupling layer.
Optionally, in the manufacturing method of the magnetoresistive film stack, the ferromagnetic coupling layer includes at least one of a metal tantalum layer, a metal ruthenium layer, a metal tungsten layer, and a metal molybdenum layer.
Optionally, in the method for manufacturing a magnetoresistive film stack, the performing shape anisotropy treatment on the free layer includes:
The combined layer of the free layer and the reference layer, or the combined layer of the free layer, the reference layer, and the barrier layer is processed by a single shape anisotropy process.
A magneto-resistance sensor comprises a substrate, a seed layer, a pinning layer and a magneto-resistance film stack which are arranged in a laminated mode;
the seed layer is arranged on the surface of the substrate;
the pinning layer is used for pinning the magnetization direction of the reference layer;
The magnetoresistive film stack is a stack obtained by the manufacturing method of the magnetoresistive film stack as claimed in any of the preceding claims.
Optionally, in the magnetoresistive sensor device, the free layer in the magnetoresistive film stack is a strip-shaped free layer.
Optionally, in the magnetoresistive sensor device, the stripe-shaped free layer is at least one of a rectangular free layer, an elliptical free layer and a long hexagonal free layer.
Optionally, in the magnetoresistive sensor device, a thickness of the free layer ranges from 1.2 nm to 1.8 nm, inclusive.
Optionally, in the magnetoresistive sensor device, the seed layer includes at least one of a metal tantalum layer, a metal ruthenium layer, a metal platinum layer, and a metal palladium layer.
Optionally, in the magnetoresistive sensor device, the pinning layer includes at least one of a cobalt/platinum multilayer film, a cobalt/palladium multilayer film, a cobalt/nickel multilayer film, an iron/platinum multilayer film, and an iron/palladium multilayer film.
The method for manufacturing the magnetoresistive film stack comprises the steps of arranging a reference layer, arranging a barrier layer on the surface of the reference layer, arranging a free layer with an inclined magnetic moment on the surface of the barrier layer, wherein the magnetization direction of the free layer under the inclined magnetic moment is not in the plane of the free layer, and carrying out shape anisotropy treatment on the free layer to reduce the included angle between the magnetization direction of the free layer and the plane of the free layer to be within a first threshold value to obtain the magnetoresistive film stack. According to the application, the magnetization direction of the free layer is changed into inclined arrangement by controlling the thickness of the free layer, the anisotropic field of the free layer under the inclined magnetic moment is greatly reduced, so that the sensitivity of the free layer is greatly improved, and meanwhile, on the basis of the magnetoresistive film stack of the free layer with the inclined magnetic moment, the magnetization direction of the free layer is aligned along the long axis in the plane by means of shape anisotropy, and a cross structure is formed with the magnetization direction of the reference layer, so that linear output is realized. The application also provides a magnetoresistive sensor with the beneficial effects.
Drawings
For a clearer description of embodiments of the invention or of the prior art, the drawings that are used in the description of the embodiments or of the prior art will be briefly described, it being apparent that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from them without inventive effort for a person skilled in the art.
FIG. 1 is a schematic flow chart of a method for fabricating a magnetoresistive film stack according to an embodiment of the present invention;
FIGS. 2 to 4 are schematic structural views of a magnetoresistive sensor according to an embodiment of the present invention;
Fig. 5 to 7 are top views of free layers of an embodiment of a magnetoresistive sensor according to the present invention.
The diagram includes 100-substrate, 200-seed layer, 300-pinning layer, 410-reference layer, 420-barrier layer, 430-free layer, 431-first free sublayer, 432-second free sublayer, 433-ferromagnetic coupling layer.
Detailed Description
In order to better understand the aspects of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The core of the present invention is to provide a method for manufacturing a magnetoresistive film stack, wherein a flow diagram of one embodiment is shown in fig. 1, which is referred to as embodiment one, and the method comprises the following steps:
s101, setting a reference layer and setting a barrier layer on the surface of the reference layer.
The reference layer may be a single layer film or a composite film layer, and may be made of a cobalt iron boron material, and when a single layer film is used as the reference layer, the thickness of the reference layer may range from 0.7 nm to 1.8 nm, including any one of the endpoints, such as 0.70 nm, 1.02 nm, or 1.80 nm.
The barrier layer may be a magnesium oxide layer, but other materials may be used, and the invention is not limited thereto.
And S102, setting a free layer with an inclined magnetic moment thickness on the surface of the barrier layer, wherein the magnetization direction of the free layer under the inclined magnetic moment is not in the plane of the free layer.
With a single layer of cobalt-iron-boron as the free layer, the corresponding tilted magnetic moment thickness ranges from 1.2 nm to 1.8 nm, including any one of the endpoints, such as 1.20 nm, 1.60 nm, or 1.80 nm.
As a preferred embodiment, the free layer comprises a first free sub-layer, a ferromagnetic coupling layer and a second free sub-layer, and the method comprises the following steps:
a1, arranging the first free sub-layer on the surface of the barrier layer.
The first free sub-layer has a thickness in the range of 1.0 nm to 1.5 nm, including any of the endpoints, such as 1.00 nm, 1.30 nm, or 1.50 nm.
A2, arranging the ferromagnetic coupling layer on the surface of the first free sublayer.
The ferromagnetic coupling layer is used for performing the function of ferromagnetic coupling on the two free sub-layers.
The ferromagnetic coupling layer has a thickness in the range of 0.1 nm to 0.5 nm, including any of the endpoints, such as 0.10 nm, 0.36 nm, or 0.50 nm.
The ferromagnetic coupling layer can be a metal titanium layer or a metal tungsten layer or a metal ruthenium layer or a metal iridium layer or a metal molybdenum layer, and a composite layer or a mixed layer of the metal layers, and the metal layers are mature in process, low in cost and good in ferromagnetic coupling effect.
A3, arranging the second free sub-layer on the surface of the ferromagnetic coupling layer.
The thickness of the second free layer ranges from 2.6 nanometers to 2.8 nanometers, including endpoints such as any of 2.60 nanometers, 2.75 nanometers, or 2.80 nanometers.
Preferably, the first free sub-layer and the second free sub-layer are layers of the same material, and may be cobalt iron boron layers, and for a specific structural schematic diagram, please refer to fig. 4.
S103, performing shape anisotropy treatment on the free layer to reduce an included angle between the magnetization direction of the free layer and the plane of the free layer to be within a first threshold value, thereby obtaining the magnetoresistive film stack.
The shape anisotropy process refers to processing the shape of the free layer, and since the free layer is always a layered structure, this step mainly changes the shape of the layer, while the "anisotropy" refers to that the free layer exhibits a difference in all directions in a top view, in other words, there is a major axis and a minor axis. And the ratio of the major axis and the minor axis of the free layer should be as large as possible in order to pull the magnetization direction of the free layer as much as possible into the plane of the free layer.
The first threshold is an angle value, and the corresponding value range can be 0 to 5 degrees, including the endpoint value, and of course, the first threshold can be selected correspondingly according to the actual situation.
Still further, the performing shape anisotropy treatment on the free layer includes:
The combined layer of the free layer and the reference layer, or the combined layer of the free layer, the reference layer, and the barrier layer is processed by a single shape anisotropy process.
In the preferred embodiment, in order to realize the shape anisotropy of the free layer, not only the shape anisotropy treatment is performed on the free layer, but also the reference layer and the barrier layer are processed at the same time, so that the technical effect of the shape anisotropy is realized, and an etching technology can be adopted.
The method for manufacturing the magnetoresistive film stack comprises the steps of arranging a reference layer, arranging a barrier layer on the surface of the reference layer, arranging a free layer with an inclined magnetic moment on the surface of the barrier layer, wherein the magnetization direction of the free layer under the inclined magnetic moment is not in the plane of the free layer, and carrying out shape anisotropy treatment on the free layer to reduce the included angle between the magnetization direction of the free layer and the plane of the free layer to be within a first threshold value to obtain the magnetoresistive film stack. According to the application, the magnetization direction of the free layer is changed into inclined arrangement by controlling the thickness of the free layer, the anisotropic field of the free layer under the inclined magnetic moment is greatly reduced, so that the sensitivity of the free layer is greatly improved, and meanwhile, on the basis of the magnetoresistive film stack of the free layer with the inclined magnetic moment, the magnetization direction of the free layer is aligned along the long axis in the plane by means of shape anisotropy, and a cross structure is formed with the magnetization direction of the reference layer, so that linear output is realized.
The invention also provides a magnetic resistance sensing device, the structural schematic diagram of one specific embodiment of which is shown in fig. 2 to 7, which is called as a second specific embodiment, and comprises a substrate 100, a seed layer 200, a pinning layer 300 and a magnetic resistance film stack which are arranged in a laminated manner;
The seed layer 200 is disposed on the surface of the substrate 100;
The pinning layer 300 is used to pin the magnetization direction of the reference layer 410;
The magnetoresistive film stack is a stack obtained by the manufacturing method of the magnetoresistive film stack as described in any of the above.
Preferably, the free layer 430 in the magnetoresistive film stack is a stripe-shaped free layer 430. The stripe-shaped free layer 430 has a shape having a distinct major axis and minor axis, and the major axis and minor axis are perpendicular to each other, as can be seen from the foregoing, the larger the ratio of the major axis and minor axis, the closer the magnetization direction of the free layer 430 is in the plane of the free layer 430.
Specifically, the stripe-shaped free layer 430 is at least one of a rectangular free layer 430, an elliptical free layer 430 and a long hexagonal free layer 430, and referring to fig. 5, 6 and 7, top views of the rectangular free layer 430, the elliptical free layer 430 and the long hexagonal free layer 430 are respectively shown.
In addition, the thickness of the free layer 430 in this embodiment corresponds to the tilted magnetic moment thickness previously described, ranging from 1.2 nm to 1.8 nm, inclusive, e.g., any one of 1.20 nm, 1.66 nm, or 1.80 nm.
The pinning layer 300 includes at least one of a cobalt/platinum multilayer film, a cobalt/palladium multilayer film, a cobalt/nickel multilayer film, an iron/platinum multilayer film, and an iron/palladium multilayer film.
When the pinning layer 300 employs a cobalt/platinum multilayer film, the thickness of the cobalt film ranges from 0.2 nm to 0.6 nm, including any of the endpoints, such as 0.20 nm, 0.33 nm, or 0.60 nm, and the thickness of the platinum film ranges from 0.2 nm to 1.0 nm, including any of the endpoints, such as 0.20 nm, 0.33 nm, or 1.00 nm.
Of course, other antiferromagnetic materials may be used to achieve the effect of the pinning layer 300, such as any of IrMn (manganese iridium complex), ptMn (manganese platinum complex), pdMn (manganese palladium complex), niMn (manganese nickel complex). When the antiferromagnetic compound described above is used as the pinning layer 300, the thickness of the pinning layer 300 ranges from 3 nm to 7nm, including any one of the end points, such as 3.0 nm, 5.3 nm, or 7.0 nm.
The seed layer 200 includes at least one of a metal tantalum layer, a metal ruthenium layer, a metal platinum layer and a metal palladium layer, and the interface contact performance between the above layers and the pinning layer 300 and the substrate 100 is good, the cost is low, the process is mature, and other materials can be selected according to different actual needs, which is not limited herein.
Of course, the free layer 430 may be stacked on a side closer to the seed layer 200 than the reference layer 410, or may be disposed on a side further away from the seed layer 200, referring to fig. 2 and 3, in which the reference layer 410 and the free layer 430 are made of cobalt-iron-boron (CoFeB) material, the barrier layer 420 is made of magnesium oxide (MgO) material, the substrate 100 is a silicon substrate 100 (Si/SiO 2), the seed layer 200 is SEED LAYER in the drawing, the pinning layer 300 is a composite film of cobalt and platinum, m and n in the drawing are the number of layers of the film, ruthenium (Ru) coupling is used between the film layers, and titanium (Ta) coupling is used between the film layers and the reference layer 410. The schematic structure of the embodiment including the first free sub-layer 431, the ferromagnetic coupling layer 433 and the second free sub-layer 432 is shown in fig. 4.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, so that the same or similar parts between the embodiments are referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It should be noted that in this specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
The method for manufacturing the magnetoresistive film stack and the magnetoresistive sensor provided by the invention are described in detail above. The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to facilitate an understanding of the method of the present invention and its core ideas. It should be noted that it will be apparent to those skilled in the art that various modifications and adaptations of the invention can be made without departing from the principles of the invention and these modifications and adaptations are intended to be within the scope of the invention as defined in the following claims.
Claims (10)
1. A method of fabricating a magnetoresistive film stack, comprising:
Setting a reference layer and setting a barrier layer on the surface of the reference layer;
A free layer with an inclined magnetic moment thickness is arranged on the surface of the barrier layer, and the magnetization direction of the free layer under the inclined magnetic moment is not in the plane of the free layer;
and carrying out shape anisotropy treatment on the free layer to reduce an included angle between the magnetization direction of the free layer and the plane of the free layer to be within a first threshold value, thereby obtaining the magnetoresistive film stack.
2. The method of manufacturing a magnetoresistive film stack according to claim 1, wherein the free layer comprises a first free sub-layer, a ferromagnetic coupling layer, and a second free sub-layer, and wherein the free layer having an oblique magnetic moment thickness on the surface of the barrier layer comprises:
Disposing the first free sub-layer on the surface of the barrier layer;
Disposing the ferromagnetic coupling layer on the first free sublayer surface;
and arranging the second free sub-layer on the surface of the ferromagnetic coupling layer.
3. The method of manufacturing a magnetoresistive film stack according to claim 2, wherein the ferromagnetic coupling layer comprises at least one of a metallic tantalum layer, a metallic ruthenium layer, a metallic tungsten layer, and a metallic molybdenum layer.
4. The method of manufacturing a magnetoresistive film stack according to claim 1, wherein the subjecting the free layer to shape anisotropy treatment comprises:
The combined layer of the free layer and the reference layer, or the combined layer of the free layer, the reference layer, and the barrier layer is processed by a single shape anisotropy process.
5. A magnetic resistance sensing device is characterized by comprising a substrate, a seed layer, a pinning layer and a magnetic resistance film stack which are arranged in a laminated mode;
the seed layer is arranged on the surface of the substrate;
the pinning layer is used for pinning the magnetization direction of the reference layer;
The magnetoresistive film stack is a stack obtained by the manufacturing method of the magnetoresistive film stack according to any of claims 1 to 4.
6. The magnetoresistive sensor device of claim 5, wherein the free layer in the magnetoresistive film stack is a strip-shaped free layer.
7. The magnetoresistive sensor device of claim 6, wherein the stripe-shaped free layer is at least one of a rectangular free layer, an elliptical free layer, and a long hexagonal free layer.
8. The magnetoresistive sensor device of claim 5, wherein the free layer has a thickness in the range of 1.2 nm to 1.8 nm, inclusive.
9. The magnetoresistive sensor device of claim 5, wherein the seed layer comprises at least one of a metallic tantalum layer, a metallic ruthenium layer, a metallic platinum layer, and a metallic palladium layer.
10. The magnetoresistive sensor device of claim 5, wherein the pinning layer comprises at least one of a cobalt/platinum multilayer film, a cobalt/palladium multilayer film, a cobalt/nickel multilayer film, an iron/platinum multilayer film, and an iron/palladium multilayer film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311386899.0A CN119894350A (en) | 2023-10-24 | 2023-10-24 | Manufacturing method of magnetoresistive film stack and magnetoresistive sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311386899.0A CN119894350A (en) | 2023-10-24 | 2023-10-24 | Manufacturing method of magnetoresistive film stack and magnetoresistive sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119894350A true CN119894350A (en) | 2025-04-25 |
Family
ID=95423092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311386899.0A Pending CN119894350A (en) | 2023-10-24 | 2023-10-24 | Manufacturing method of magnetoresistive film stack and magnetoresistive sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN119894350A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100109111A1 (en) * | 2008-10-30 | 2010-05-06 | Kyung Ho Shin | Magnetic tunnel junction structure having free layer with oblique magnetization |
| DE102011082122A1 (en) * | 2011-09-05 | 2013-03-07 | Siemens Aktiengesellschaft | Measuring device for mechanical deformation of body for weight measuring scale, has spin valve sensor element, in which free layer is freely directed in direction of magnetization, and shape anisotropy is fixed by magnetic shape anisotropy |
| US20140111195A1 (en) * | 2012-10-22 | 2014-04-24 | Industrial Technology Research Institute | Magnetic field sensor for sensing external magnetic field |
| CN206583459U (en) * | 2016-12-19 | 2017-10-24 | 无锡乐尔科技有限公司 | Linear transducer |
| JP2020181869A (en) * | 2019-04-24 | 2020-11-05 | 国立研究開発法人産業技術総合研究所 | Magnetic element, magnetic memory chip, magnetic storage device and writing method of magnetic element |
| CN112310273A (en) * | 2019-07-29 | 2021-02-02 | 中电海康集团有限公司 | Magnetic tunnel junction and preparation method thereof |
-
2023
- 2023-10-24 CN CN202311386899.0A patent/CN119894350A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100109111A1 (en) * | 2008-10-30 | 2010-05-06 | Kyung Ho Shin | Magnetic tunnel junction structure having free layer with oblique magnetization |
| DE102011082122A1 (en) * | 2011-09-05 | 2013-03-07 | Siemens Aktiengesellschaft | Measuring device for mechanical deformation of body for weight measuring scale, has spin valve sensor element, in which free layer is freely directed in direction of magnetization, and shape anisotropy is fixed by magnetic shape anisotropy |
| US20140111195A1 (en) * | 2012-10-22 | 2014-04-24 | Industrial Technology Research Institute | Magnetic field sensor for sensing external magnetic field |
| CN206583459U (en) * | 2016-12-19 | 2017-10-24 | 无锡乐尔科技有限公司 | Linear transducer |
| JP2020181869A (en) * | 2019-04-24 | 2020-11-05 | 国立研究開発法人産業技術総合研究所 | Magnetic element, magnetic memory chip, magnetic storage device and writing method of magnetic element |
| CN112310273A (en) * | 2019-07-29 | 2021-02-02 | 中电海康集团有限公司 | Magnetic tunnel junction and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9207290B2 (en) | Magnetic field sensor for sensing external magnetic field | |
| EP3092505B1 (en) | Magnetoresistance element with an improved seed layer to promote an improved response to magnetic fields | |
| JP6105817B2 (en) | Nanomagnetic multilayer film for temperature sensor and its manufacturing method | |
| CN107923956B (en) | Magnetoresistive sensor | |
| JP5750211B2 (en) | TMR element and method for forming the same | |
| US7262941B2 (en) | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures | |
| US8836061B2 (en) | Magnetic tunnel junction with non-metallic layer adjacent to free layer | |
| CN109166690B (en) | Anisotropic magneto-resistance based on multilayer exchange bias structure | |
| US9304176B2 (en) | Thin-film magnetic sensor including a GMR film and method for manufacturing the same | |
| CN106104828B (en) | Magnetic sensor | |
| CN114583046A (en) | Spin orbit torque magnetic memory and preparation method thereof | |
| CN100549716C (en) | Three-D magnetic field sensor that a kind of stratiform is integrated and its production and use | |
| JP3578116B2 (en) | Method for manufacturing spin-valve giant magnetoresistive sensor and method for manufacturing thin-film magnetic head | |
| CN119894350A (en) | Manufacturing method of magnetoresistive film stack and magnetoresistive sensor | |
| CN112768603B (en) | A tunnel magnetoresistance and a manufacturing method thereof | |
| Tu et al. | Optimization of spin-valve structure NiFe/Cu/NiFe/IrMn for planar hall effect based biochips | |
| CN213816192U (en) | Tunnel magnetoresistance | |
| WO2017110534A1 (en) | Laminate film for current-perpendicular-to-plane giant magnetoresistive element, current-perpendicular-to-plane giant magnetoresistive element, and use therefor | |
| CN112768604B (en) | A tunnel magnetoresistance and a manufacturing method thereof | |
| CN213816193U (en) | Tunnel magnetoresistance | |
| CN213816194U (en) | Tunnel magnetoresistance and tunnel magnetic device | |
| KR101521013B1 (en) | Perpendicular Magneto-resistance Device | |
| US20240094314A1 (en) | Multiple cobalt iron boron layers in a free layer of a magnetoresistive sensing element | |
| JP2012015513A (en) | Tmr device and manufacturing method thereof | |
| US11921172B2 (en) | Magnetoresistive sensor element with synthetic antiferromagnet biasing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |