CN119913489A

CN119913489A - Process chamber and semiconductor process equipment

Info

Publication number: CN119913489A
Application number: CN202510413316.1A
Authority: CN
Inventors: 徐彬城; 逄效伟; 陆伟伟
Original assignee: Xiancai Shenzhen Semiconductor Technology Co ltd
Current assignee: Xiancai Shenzhen Semiconductor Technology Co ltd
Priority date: 2025-04-03
Filing date: 2025-04-03
Publication date: 2025-05-02
Anticipated expiration: 2045-04-03
Also published as: CN119913489B

Abstract

The application discloses a process chamber and semiconductor process equipment, wherein the process chamber comprises a chamber body, a substrate carrying table and a quartz ring, the top of the chamber body is provided with a first air inlet hole, the bottom of the chamber body is provided with a first air outlet hole, the substrate carrying table is arranged at the bottom of the chamber body and is used for carrying wafers, the quartz ring is arranged at the bottom of the chamber body and surrounds the substrate carrying table, the diameter of the quartz ring is gradually reduced from top to bottom, and the height of the quartz ring is basically equal to the height of the substrate carrying table. According to the application, the diameter of the quartz ring is gradually reduced from top to bottom, so that the airflow path is changed, the vortex at the top of the quartz ring is eliminated, the airflow in the process chamber is more stable and uniform, the film thickness is more uniform, and the consistency of product quality is improved.

Description

Process chamber and semiconductor process equipment

Technical Field

The application relates to the technical field of micromachining, in particular to a process chamber and semiconductor process equipment.

Background

The microwave plasma chemical vapor deposition is a technology for decomposing a chemical gas precursor in a low-pressure environment by utilizing microwave plasma so as to deposit a film on the surface of a substrate, and can be used for depositing high-quality films such as diamond films, carbon nanotubes, graphene and the like. In microwave plasma chemical vapor deposition equipment, the structural design in a process chamber is the core technology of the equipment, and the implementation and the use of the later process are directly influenced.

The process chamber mainly comprises a chamber body, a substrate carrying platform and a quartz ring, wherein the substrate carrying platform and the quartz ring are arranged in the chamber body, a wafer is carried on the substrate carrying platform, and the quartz ring is arranged around the substrate carrying platform so as to improve the plasma concentration above the wafer and the deposition efficiency. When the existing process chamber is used for film deposition, the phenomenon of uneven film thickness can be generated, and the consistency of product quality is poor.

Disclosure of Invention

In view of the above technical problems, the present application provides a process chamber and a semiconductor process device, which can solve the problems that the existing process chamber may generate uneven film thickness and poor product quality consistency during film deposition.

To solve the above technical problem, in a first aspect, an embodiment of the present application provides a process chamber, including:

the top of the chamber body is provided with a first air inlet hole, the bottom is provided with a first air outlet hole;

The substrate carrier is arranged at the bottom in the chamber body and used for carrying wafers;

And the quartz ring is arranged at the bottom in the chamber body and surrounds the substrate carrying table, the diameter of the quartz ring is gradually reduced from top to bottom, and the height of the quartz ring is basically equal to the height of the substrate carrying table.

Optionally, the longitudinal section of the quartz ring is isosceles trapezoid, and the included angle between the waist and the vertical direction is 10-20 degrees.

Optionally, a limiting structure is arranged on the inner side surface of the bottom of the chamber body and used for limiting the quartz ring.

Optionally, the limit structure is a first annular groove arranged on the inner side surface of the bottom of the chamber body.

Optionally, the limiting structure comprises an arc-shaped step arranged on the inner side surface of the bottom of the chamber body, the radius of the arc-shaped step is equal to that of the bottom of the quartz ring, and the central angle of the arc-shaped step is smaller than 90 degrees;

the quartz ring is arranged against the arc-shaped step to limit.

Optionally, the limiting structure further includes a protruding strip disposed on an inner side surface of the bottom of the chamber body, the protruding strip extends along a radial direction of a circle where the arc-shaped step is located, and the arc-shaped step is symmetrical with respect to the protruding strip;

The bottom of the quartz ring is provided with a first notch matched with the convex strip, and the quartz ring slides along the convex strip and abuts against the arc-shaped step.

Optionally, the chamber body includes:

The top surface of the bottom plate is provided with a second annular groove, the first air outlet hole is arranged at the bottom of the second annular groove, and a first boss is formed at the center of the second annular groove; the substrate carrying platform is arranged on the first boss;

The air sealing plate is arranged on the top surface of the bottom plate and covers the second annular groove to form a first annular air cavity, and the center of the air sealing plate is provided with a round hollowed-out part so as to avoid the substrate carrier;

the upper cover assembly is arranged on the bottom plate so as to form a closed space with the bottom plate, and the first air inlet hole is arranged on the upper cover assembly.

Optionally, the second air inlet holes are provided with a plurality of second air inlet holes and are uniformly distributed along the circumferential direction of the circular hollowed-out part;

the edge of the first boss is provided with a second notch communicated with the second air inlet holes in one-to-one correspondence, and the second notch is communicated with the first annular air cavity.

Optionally, a gas filtering piece is arranged in the second notch, one end of the gas filtering piece is communicated with the second air inlet hole, and the other end of the gas filtering piece is communicated with the first annular air cavity.

Optionally, the upper cover assembly includes:

the cover body is provided with an annular step on the outer side wall;

The inner side of the bottom of the air homogenizing ring is provided with a third annular groove, the air homogenizing ring is sleeved on the outer side of the outer side wall and is supported on the annular step, so that the third annular groove forms a second annular air cavity, and the first air inlet is arranged on the air homogenizing ring;

The side wall of the cover body is also provided with a through hole communicated with the second annular air cavity.

In a second aspect, the present application also provides a semiconductor processing apparatus comprising a process chamber as described in the above embodiments.

The process chamber of the present application as described above may include a chamber body, a substrate carrier, and a quartz ring. The top of cavity body is equipped with first inlet port, and the bottom is equipped with first venthole. The substrate carrier is arranged at the bottom in the chamber body, the quartz ring is arranged at the bottom in the chamber body and surrounds the substrate carrier, and the diameter of the quartz ring is gradually reduced from top to bottom. When the process is carried out, the process gas is introduced into the chamber body through the first air inlet hole at the top of the chamber body, the process gas is dissociated into plasma after entering, then the reaction occurs and the film is deposited on the wafer, and the gas in the chamber body is discharged through the first air outlet hole at the bottom. The diameter of the quartz ring is gradually reduced from top to bottom, so that the air flow path is changed, the vortex at the top of the quartz ring disappears, the air flow in the process chamber is more stable and uniform, the film thickness is more uniform, and the consistency of the product quality is improved.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.

FIG. 1 is a schematic view of a process chamber of the related art;

FIG. 2 is a simulation diagram of a process performed by the process chamber of FIG. 1;

FIG. 3 is a schematic perspective view of a top view of a process chamber according to an embodiment of the present application;

FIG. 4 is a schematic perspective view of the bottom view of the process chamber of FIG. 3;

FIG. 5 is a schematic top view of a process chamber according to an embodiment of the present application;

FIG. 6 is a schematic cross-sectional view taken along line A-A of FIG. 5;

FIG. 7 is a simulation diagram of a process performed by the process chamber of FIG. 6;

FIG. 8 is a schematic view of the inside bottom of a process chamber according to an embodiment of the present application;

FIG. 9 is a schematic view of the bottom inside of another process chamber provided by an embodiment of the present application;

FIG. 10 is a schematic view of an exploded view of a process chamber according to an embodiment of the present application;

FIG. 11 is a schematic cross-sectional view taken along line B-B in FIG. 5;

FIG. 12 is a schematic illustration of the fit between a base plate and a gas filter provided by an embodiment of the present application;

FIG. 13 is an enlarged schematic view of the portion A of FIG. 12;

Fig. 14 is a schematic bottom view of a gas equalizing ring according to an embodiment of the present application.

The achievement of the objects, functional features and advantages of the present application will be further described with reference to the accompanying drawings, in conjunction with the embodiments. Specific embodiments of the present application have been shown by way of the above drawings and will be described in more detail below. The drawings and the written description are not intended to limit the scope of the inventive concepts in any way, but rather to illustrate the inventive concepts to those skilled in the art by reference to the specific embodiments.

Detailed Description

Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application. Rather, they are merely examples of apparatus and methods consistent with aspects of the application as detailed in the accompanying claims.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a related art process chamber, which mainly comprises a chamber body 10a, a substrate carrier 20a disposed in the chamber body 10a, and a quartz ring 30a, wherein a wafer is carried on the substrate carrier 20a, the quartz ring 30a is disposed around the substrate carrier 20a, gas enters from the top of the chamber body 10a and flows out from the bottom of the chamber body 10a, and the quartz ring 30a can improve the plasma concentration above the wafer and the deposition efficiency. When the existing process chamber is used for film deposition, the phenomenon of uneven film thickness can be generated, and the consistency of product quality is poor.

The applicant has studied and analyzed this problem, refer to fig. 2, which is a simulation diagram of the process performed in the process chamber of fig. 1, in which gas enters the process chamber from the top and flows out from two gas outlets (fig. 4 may be combined), arrows in the diagram and lines inside the process chamber are all path line simulation diagrams of gas flow, and in the flowing process, eddy currents are formed on the top of the quartz ring 30a, see a dashed box in the diagram, which affect uniformity of the gas in the process chamber, and thus the deposited film thickness is uneven, and product uniformity is affected. Based on this, the application provides a process chamber and a semiconductor process device.

Referring to fig. 3-6, fig. 3 is a schematic perspective view of a top view of a process chamber according to an embodiment of the application, fig. 4 is a schematic perspective view of a bottom view of the process chamber according to fig. 3, fig. 5 is a schematic top view of the process chamber according to an embodiment of the application, and fig. 6 is a schematic cross-sectional view along line A-A in fig. 5. The process chamber may include a chamber body 10, a substrate carrier 20, and a quartz ring 30.

The top of the chamber body 10 is provided with a first air inlet hole 101 (fig. 3), and the bottom is provided with a first air outlet hole 102 (fig. 4). The substrate stage 20 is disposed at the bottom of the chamber body 10 for carrying wafers, and as shown in fig. 5, a quartz ring 30 is disposed at the bottom of the chamber body 10 and surrounds the substrate stage 20, the diameter of the quartz ring 30 gradually decreases from top to bottom, and as some examples, the side surface of the quartz ring 30 may be a smooth curved surface or an inclined surface, and the height of the quartz ring 30 is substantially equal to the height of the substrate stage 20.

The working principle of the process chamber of this embodiment is that a wafer is placed on the substrate stage 20, then a process gas is introduced into the chamber body 10 through the first gas inlet 101 at the top, and the process gas is dissociated into plasma after entering, and the dissociation condition may be that microwave energy is applied to the process gas. The plasma reacts and deposits on the wafer to form a thin film, and the gas (including by-products) inside the chamber body 10 may be exhausted through the first gas outlet hole 102 at the bottom. In the process chamber of this embodiment, the diameter of the quartz ring 30 gradually decreases from top to bottom, so that the airflow path is changed, and the vortex at the top of the quartz ring 30 disappears, as shown in fig. 7, fig. 7 is a simulation diagram of the process performed by the process chamber of fig. 6, and the simulation principle is the same as that of fig. 2, and the airflow in the process chamber is more stable and uniform, so that the film thickness is more uniform, and the uniformity of product quality is improved.

As an example of the inclined surface of the side surface of the quartz ring 30, with continued reference to fig. 6, the longitudinal section of the quartz ring 30 may be isosceles trapezoid, and the included angle between the waist and the vertical direction is 10-20 °, so that more stable air flow can be obtained. Fig. 7 is a result of a simulation experiment performed with the side surface of the quartz ring 30 inclined by 15 ° from top to bottom to outside, and it is shown that no vortex occurs at the top of the quartz ring 30 compared with fig. 2, so that a smoother air flow effect can be obtained.

In one embodiment, the inner side surface of the bottom of the chamber body 10 is provided with a limiting structure for limiting the quartz ring 30, so that the quartz ring 30 is prevented from being eccentric, and the non-coaxial with the chamber body 10 can cause uneven film thickness of a film deposited on the surface of a wafer.

As an example of a limiting structure, referring to fig. 8, fig. 8 is a schematic structural diagram of the inner side of the bottom of a process chamber provided by the embodiment of the application, the limiting structure 113 may be a first annular groove disposed on the inner side of the bottom of the chamber body 10, and when the device is installed, the bottom of the quartz ring 30 may be directly embedded into the first annular groove to realize positioning, so as to ensure the coaxiality between the quartz ring 30 and the chamber body 10.

As another example of the limiting structure, referring to fig. 9, fig. 9 is a schematic view of the bottom inner side of another process chamber provided by the embodiment of the present application, the limiting structure 113 includes an arc step 1131 disposed on the bottom inner side of the chamber body 10, the radius of the arc step 1131 is equal to that of the bottom of the quartz ring 30, and the central angle of the arc step 1131 is smaller than 90 °, and the quartz ring 30 is disposed against the arc step 1131 for limiting. The arc-shaped step 1131 may be formed by an arc-shaped barrier strip, or may be formed by welding two plates of the circular plate 113A and the annular plate 113B, wherein the central angle of the annular plate 113B is smaller than 90 °, and the annular plate 113B is welded on the circular plate 113A to form the arc-shaped step 1131. Compared with the structure of fig. 8, the assembly of the quartz ring 30 in this embodiment does not require alignment, and the assembly is simpler by placing the quartz ring 30 at the bottom of the chamber body 10 and then abutting against the arc-shaped step 1131.

Further, referring to fig. 9 and 10, fig. 10 is an exploded view of a process chamber according to an embodiment of the present application, the limiting structure 113 may further include a protrusion 1132 disposed on an inner side surface of a bottom of the chamber body 10, the protrusion 1132 extends along a radial direction of a circle where the arc-shaped step 1131 is located, and the arc-shaped step 1131 is symmetrical with respect to the protrusion 1132. The bottom of the quartz ring 30 is provided with a first notch 301 matched with the raised strip 1132, and the quartz ring 30 slides along the raised strip 1132 and abuts against the arc-shaped step 1131. When the quartz ring 30 is installed, the first notch 301 of the quartz ring 30 is matched to the raised line 1132, and then the quartz ring 30 is pushed to one side of the arc-shaped step 1131 along the raised line 1132 until the quartz ring 30 abuts against the arc-shaped step 1131.

The limiting structure 113 of the embodiment not only can ensure the coaxiality between the quartz ring 30 and the chamber body 10, but also can prevent the quartz ring 30 from rotating relative to the chamber body 10, so that each process can be ensured to be performed in an almost completely consistent environment, and the consistency of the process results can be improved.

It should be noted that, the chamber body 10 is used to provide a sealed reaction environment, and the specific structural form of the chamber body 10 is not particularly limited in the embodiments of the present application. In one embodiment, referring to fig. 6 and 10, the chamber body 10 may include a bottom plate 11, an air seal plate 12, and a lid assembly 13.

The top surface of the bottom plate 11 is provided with a second annular groove 111, the first air outlet hole 102 is disposed at the bottom of the second annular groove 111, please refer to fig. 11, fig. 11 is a schematic cross-sectional view along line B-B in fig. 5, and a first boss 112 is formed at the center of the second annular groove 111, that is, the second annular groove 111 is disposed around the first boss 112. The substrate stage 20 is disposed on the first boss 112. The air sealing plate 12 is arranged on the top surface of the bottom plate 11 and covers the second annular groove 111 to form a first annular air cavity, and a circular hollowed-out part 103 is arranged in the center of the air sealing plate 12 so as to avoid the substrate carrier 20. The air sealing plate 12 is provided with a second air inlet hole 104 communicated with the first annular air cavity. The limiting structure 113 is disposed on the air sealing plate 12, and illustratively, the air sealing plate 12 may include a circular plate 113A and an annular plate 113B disposed on a top surface of the circular plate 113A, which have the same outer diameters, and may be connected by welding, where a central angle of the annular plate 113B is smaller than 90 °, so that the aforementioned arc-shaped step 1131 may be formed. The upper cover assembly 13 is disposed on the bottom plate 11 to enclose a closed space with the bottom plate 11, and the first air inlet 101 is disposed on the upper cover assembly 13.

In this embodiment, through the structural cooperation of the bottom plate 11 and the air sealing plate 12, a first annular air cavity (refer to the second annular groove 111) can be formed at the bottom of the chamber body 10, and the first annular air cavity is used as a buffer cavity/uniform air cavity for discharging air, so that the air flow in the chamber body 10 can be more stable.

Preferably, the first boss 112 is further provided with a second boss 114, the substrate carrier 20 is supported on the second boss 114, and the circular hollow 103 in the center of the air seal plate 12 is matched with the second boss 114. It is further preferable that the height of the second boss 114 is equal to the thickness of the gas seal plate 12, so that the entire surface is flat after the gas seal plate 12 is disposed on the top surface of the bottom plate 11 to cover the second annular recess 111, so that the quartz ring 30 can be smoothly slid horizontally at the bottom of the chamber body 10 when the quartz ring 30 is installed.

In one embodiment, referring to fig. 10, a plurality of second air inlets 104 may be disposed on the air seal plate 12 and uniformly distributed along the circumference of the circular hollow 103, and six are illustrated in fig. 10. The edge of the first boss 112 is provided with a second notch 105 which is communicated with the second air inlet holes 104 in a one-to-one correspondence manner, and the second notch 105 is communicated with the first annular air cavity (namely, the second annular groove 111). A plurality of exhaust passages are formed by the plurality of second air intake holes 104 which are uniformly distributed, so that the uniformity of the air flow can be further improved.

In one embodiment, referring to fig. 6, 10, 12 and 13, the second notch 105 is further provided with a gas filtering member 40, where one end of the gas filtering member 40 is in communication with the second gas inlet hole 104, and the other end is in communication with the first annular air cavity (i.e. the second annular groove 111). Referring to fig. 13, the second notch 105 extends longitudinally to the bottom of the second annular groove 111, and the gas filter 40 and the second annular groove 111 have a gap in the vertical direction to keep the gas path in communication.

In an embodiment, referring to fig. 6, 10, 11 and 14, fig. 14 is a schematic bottom view of a gas homogenizing ring according to an embodiment of the present application, and the upper cover assembly 13 may include a cover body 131 and a gas homogenizing ring 132. The outer side wall of the cap body 131 is provided with an annular step 1311. The third annular groove 106 is provided on the inner side of the bottom of the gas equalizing ring 132, that is, the wall thickness of the top of the gas equalizing ring 132 is greater than the wall thickness of the bottom, and the outer wall of the gas equalizing ring 132 is flush, so that the third annular groove 106 is formed on the inner side of the bottom (that is, a step is formed). The gas equalizing ring 132 is sleeved on the outer side of the outer side wall and is supported on the annular step 1311, so that the third annular groove 106 forms the second annular air cavity 108. That is, after the bottom surface of the gas homogenizing ring 132 is supported on the annular step 1311, the third annular groove 106 is sealed together with the annular step 1311 and the vertical wall of the cover body 131 to form the second annular gas cavity 108, and the second annular gas cavity 108 can homogenize the gas so as to improve the uniformity of the inlet gas flow. The first air inlet 101 is disposed on the air homogenizing ring 132, and the sidewall of the cover body 131 is further provided with a through hole 107 communicating with the second annular air cavity 108. The through holes 107 may be uniformly provided in plurality along the circumferential direction of the sidewall of the cover body 131 to improve the uniformity of the intake air.

As an example of the cap body 131, with continued reference to fig. 10 and 11, the cap body 131 may include a first cylindrical sidewall 1320, a first annular cover plate 1310 extending outwardly from a bottom of the first cylindrical sidewall 1320, a second annular cover plate 1330 extending inwardly from a top of the first cylindrical sidewall 1320, a second cylindrical sidewall 1340 extending upwardly from an inner edge of the second annular cover plate 1330, and a top cap 1350 covering the top of the second cylindrical sidewall 1340. An annular step 1311 is provided on the outside of the second cylindrical sidewall 1340, and the through hole 107 may be provided on the second cylindrical sidewall 1340 above the annular step 1311.

The first annular cover plate 1310 is supported on the edge of the bottom plate 11, the first cylindrical sidewall 1320 is disposed around the outside of the quartz ring 30 and is higher than the quartz ring 30, the first cylindrical sidewall 1320 is used as a main generation area of the deposition process, the diameter of the second cylindrical sidewall 1340 is smaller than that of the quartz ring 30, and a gas supply area and a plasma excitation area are formed above the quartz ring 30.

It should be noted that, the cover body 131 may be an integrally formed structure, or may be assembled from one or more parts, and the embodiment of the present application is not particularly limited.

The embodiment of the application also provides semiconductor process equipment which comprises the process chamber in each embodiment. The semiconductor processing apparatus may be, for example, a microwave plasma chemical vapor deposition apparatus.

Regarding other working principles and processes of the semiconductor processing apparatus, reference is made to the description of the pressing device in the foregoing embodiment of the present invention, and no further description is given here.

The foregoing has outlined a detailed description of a process chamber and semiconductor processing apparatus in accordance with the present application, and the detailed description of the principles and embodiments of the application have been provided herein. In the present application, the descriptions of the embodiments are focused on, and the details or descriptions of the other embodiments may be referred to for the parts not described in detail or in the description of one embodiment.

It will be understood that the terms "comprises," "comprising," "includes," and/or "including" specify the presence of stated features, steps, operations, elements, components, items, categories, and/or groups, but do not preclude the presence, presence or addition of one or more other features, steps, operations, elements, components, items, categories, and/or groups. The terms "or", "and/or", "including at least one of", and the like, as used herein, may be construed as inclusive, or mean any one or any combination. For example, "including at least one of" A, B, C "means" any of A, B, C, A and B, A and C, B and C, A and B and C ", and as yet another example," A, B or C "or" A, B and/or C "means" any of A, B, C, A and B, A and C, B and C, A and B and C ". An exception to this definition will occur only when a combination of elements, functions, steps or operations are in some way inherently mutually exclusive.

It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, these information should not be limited by these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope herein. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, depending on the context, unless the context indicates otherwise.

It should be understood that the terms "top," "bottom," "upper," "lower," "vertical," "horizontal," and the like are used for convenience in describing and simplifying the description of the present application based on the orientation or positional relationship shown in the drawings, and do not denote or imply that the apparatus must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present application.

The foregoing is only a preferred embodiment of the present application, and therefore, the technical features of the technical solution of the present application may be combined arbitrarily, and for brevity, all of the possible combinations of the technical features in the foregoing embodiment may not be described, and all of the equivalent structures or equivalent processes using the descriptions of the present application and the contents of the drawings may be applied directly or indirectly to other related technical fields, so long as the combinations of the technical features are not contradictory, and all of them are included in the protection scope of the present application.

Claims

1. A process chamber, comprising:

The chamber body has a first air inlet at the top and a first air outlet at the bottom;

A substrate carrier, arranged at the bottom of the chamber body, for carrying a wafer;

A quartz ring is arranged at the bottom of the chamber body and surrounds the substrate stage. The diameter of the quartz ring gradually decreases from top to bottom, and the height of the quartz ring is substantially equal to the height of the substrate stage.

2. The process chamber according to claim 1 is characterized in that the longitudinal cross-section of the quartz ring is an isosceles trapezoid, and the angle between the waist and the vertical direction is 10-20°.

3. The process chamber according to claim 1 is characterized in that a limiting structure is provided on the inner side surface of the bottom of the chamber body for limiting the quartz ring.

4 . The process chamber according to claim 3 , wherein the limiting structure is a first annular groove arranged on an inner side surface of the bottom of the chamber body.

5. The process chamber according to claim 3, characterized in that the limiting structure comprises an arc-shaped step arranged on the inner side of the bottom of the chamber body, the arc-shaped step is equal to the bottom radius of the quartz ring, and the central angle of the arc-shaped step is less than 90°;

The quartz ring is arranged against the arc-shaped step to perform position limiting.

6. The process chamber according to claim 5, characterized in that the limiting structure further comprises a convex strip arranged on the inner side surface of the bottom of the chamber body, the convex strip extends along the radial direction of the circle where the arc-shaped step is located, and the arc-shaped step is symmetrical about the convex strip;

7. The process chamber according to any one of claims 3 to 6, wherein the chamber body comprises:

The bottom plate has a second annular groove on the top surface, the first air outlet is arranged at the bottom of the second annular groove, a first boss is formed at the center of the second annular groove; the substrate carrier is arranged on the first boss;

An air sealing plate is arranged on the top surface of the bottom plate and covers the second annular groove to form a first annular air cavity. A circular hollow portion is arranged at the center of the air sealing plate to avoid the substrate carrier. A second air inlet hole communicating with the first annular air cavity is arranged on the air sealing plate. The limiting structure is arranged on the air sealing plate.

The upper cover assembly is arranged on the bottom plate to enclose a closed space with the bottom plate, and the first air inlet is arranged on the upper cover assembly.

8. The process chamber according to claim 7, characterized in that a plurality of second air inlet holes are provided and are evenly distributed along the circumference of the circular hollow portion;

The edge of the first boss is provided with a second notch which is in one-to-one correspondence with the second air inlet hole, and the second notch is in communication with the first annular air cavity.

9 . The process chamber according to claim 8 , wherein a gas filter is provided in the second notch, one end of the gas filter is communicated with the second air inlet hole, and the other end of the gas filter is communicated with the first annular air cavity.

10. The process chamber according to claim 7, wherein the upper cover assembly comprises:

The cover body has an annular step on its outer side wall;

An air-leveling ring, wherein a third annular groove is provided on the inner side of the bottom, the air-leveling ring is sleeved on the outer side of the outer wall and supported on the annular step so that the third annular groove forms a second annular air cavity, and the first air inlet hole is provided on the air-leveling ring;

The side wall of the cover body is also provided with a through hole communicating with the second annular air cavity.

11. A semiconductor process equipment, characterized by comprising the process chamber according to any one of claims 1-10.