CN119947400A - Light emitting diode device, display panel and display device - Google Patents
Light emitting diode device, display panel and display device Download PDFInfo
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Abstract
The application discloses a light-emitting diode device, a display panel and a display device, which comprise an anode layer, a hole transmission layer, a light-emitting layer, an electron transmission layer and a cathode layer which are sequentially stacked, wherein the light-emitting layer comprises a first light-emitting layer and a second light-emitting layer which are stacked, the first light-emitting layer is positioned on one side of the second light-emitting layer facing the hole transmission layer, the first light-emitting layer comprises a first main body material, and the second light-emitting layer comprises a second main body material, wherein the first triplet excited state energy level of the first main body material of the first light-emitting layer is greater than the first triplet excited state energy level of the second main body material of the second light-emitting layer. Through the scheme, the problem of uneven color under the low gray scale is solved while the low power consumption of the light-emitting diode device under the high gray scale is ensured, and the display effect is improved.
Description
Technical Field
The present application relates to the field of display technologies, and in particular, to a light emitting diode device, a display panel, and a display apparatus.
Background
Organic light emitting diodes (LIGHT EMITTING DISPLAY, OLED) and planar light emitting Diode devices based on light emitting Diode (LIGHT EMITTING Diode) technology have been widely used in various consumer electronic products such as mobile phones, televisions, notebook computers, desktop computers, etc. because of their high image quality, power saving, thin body, and wide application range.
However, the current OLED display products are prone to color non-uniformity at low gray levels.
Disclosure of Invention
The application mainly solves the technical problem of providing a light-emitting diode device, a display panel and a display device, which ensure low power consumption under high gray scale, improve the problem of uneven color under low gray scale and improve the display effect.
In order to solve the technical problems, the technical scheme adopted by the application is that the light-emitting diode device comprises an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode layer which are sequentially stacked, wherein the light-emitting layer comprises a first light-emitting layer and a second light-emitting layer which are stacked, the first light-emitting layer is positioned on one side of the second light-emitting layer facing the hole transport layer, the first light-emitting layer comprises a first main body material, and the second light-emitting layer comprises a second main body material, and the first triplet excitation state energy level of the first main body material of the first light-emitting layer is larger than the first triplet excitation state energy level of the second main body material of the second light-emitting layer.
Preferably, the difference between the first triplet excited state energy level of the first host material and the first triplet excited state energy level of the second host material is greater than 0.2eV.
Preferably, the first light emitting layer further comprises a first doping material, and the second light emitting layer further comprises a second doping material, wherein the quantum efficiency of the first doping material is lower than the quantum efficiency of the second doping material.
Preferably, the first doping material comprises at least one of a quencher or an organic fluorescent material, and/or the second doping material comprises an organic phosphorescent material.
Preferably, the ratio of the quantum efficiency of the first doping material to the quantum efficiency of the second doping material is less than or equal to 1/4.
Preferably, the first light emitting layer further includes a first doping material, and the second light emitting layer further includes a second doping material, wherein the first doping ratio is smaller than the second doping ratio, the first doping ratio is a volume ratio of the first doping material to a sum of the first host material and the first doping material, and the second doping ratio is a volume ratio of the second doping material to a sum of the second host material and the second doping material.
Preferably, the ratio of the first doping ratio to the second doping ratio is less than or equal to 1/4.
Preferably, the thickness of the first light emitting layer is smaller than the thickness of the second light emitting layer in the lamination direction.
Preferably, the thickness ratio of the first light emitting layer to the second light emitting layer is less than or equal to 1/3.
Preferably, the light emitting efficiency of the first light emitting layer is lower than the light emitting efficiency of the second light emitting layer, and the rising speed of the hole mobility of the hole transporting layer is greater than the rising speed of the electron mobility of the electron transporting layer along with the rising of the electric field intensity of the electric field where the hole transporting layer and the electron transporting layer are located;
Preferably, the mobility change value is defined as the ratio of the mobility of the electric field at 1.6x10 5 V/cm to the mobility of the electric field at 10 4 V/cm, and the ratio of the mobility change value of holes to the mobility change value of electrons is greater than or equal to 10.
Preferably, the light emitting color of the light emitting diode device is red or green.
In order to solve the technical problems, the technical scheme includes that the light-emitting diode device comprises an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode layer which are sequentially stacked, wherein the light-emitting layer comprises a first light-emitting layer and a second light-emitting layer which are stacked, the first light-emitting layer is positioned on one side of the hole transport layer, which faces the hole transport layer, wherein the light-emitting efficiency of the first light-emitting layer is lower than that of the second light-emitting layer, and the rising speed of the hole mobility of the hole transport layer is higher than that of the electron mobility of the electron transport layer along with the rising of the electric field intensity of the electric field where the hole transport layer and the electron transport layer are positioned.
Preferably, the mobility change value is defined as the ratio of the mobility of the electric field at 1.6x10 5 V/cm to the mobility of the electric field at 10 4 V/cm, and the ratio of the mobility change value of holes to the mobility change value of electrons is greater than or equal to 10.
Preferably, the mobility of holes is less than the mobility of electrons at 10 4 V/cm in the electric field.
Preferably, the light emitting color of the light emitting diode device is red or green.
In order to solve the technical problems, the application adopts another technical scheme that a display panel is provided, and the display panel comprises the light-emitting diode device in any embodiment.
The light-emitting diode device has the beneficial effects that the light-emitting layer is of a double-layer structure, the energy level of the first light-emitting layer close to the hole transmission layer is larger than that of the second light-emitting layer close to the electron transmission layer, so that potential barriers are generated between the first light-emitting layer and the second light-emitting layer, energy generated during exciton recombination can only be transferred from the first light-emitting layer to the second light-emitting layer, but not from the second light-emitting layer to the first light-emitting layer, the phenomenon that the energy generated during exciton recombination of the second light-emitting layer is transferred to the first light-emitting layer with lower light-emitting efficiency under the condition of higher voltage is avoided, the energy generated by the exciton is always generated by the second light-emitting layer, and the light-emitting efficiency of the light-emitting diode device is always kept at a higher level under the high gray level, so that the device has lower power consumption is ensured.
According to the light-emitting diode device provided by the application, the mobility of electrons and holes is increased along with the increase of voltage, the increasing speed of the hole mobility of the hole transmission layer is larger than that of the electron mobility of the electron transmission layer along with the increase of voltage, and the light-emitting efficiency of the OLED device is higher in a high voltage state because the light-emitting efficiency of the second light-emitting layer is higher than that of the first light-emitting layer because the electron mobility and the hole mobility are different, namely the exciton recombination region is positioned in the first light-emitting layer near the hole transmission layer in a low voltage state, and the light-emitting efficiency of the OLED device is lower at the moment, and the increasing speed of the hole compared with the electron mobility is faster along with the increase of voltage, so that the exciton recombination region gradually shifts to the electron transmission layer, namely the exciton recombination region gradually moves from the first light-emitting layer to the second light-emitting layer. The light-emitting diode device provided by the application has lower light-emitting efficiency in a low-voltage state, and the voltage is positively correlated with the display gray level, so that the light-emitting efficiency of the light-emitting diode device in the low-gray level state is lower, the working current of the device in the low-gray level state is increased, the anode of the device can be fully initialized when the anode of the device is started, and all the devices on the display panel can be started simultaneously, thereby avoiding the problem of uneven color. On the other hand, the light-emitting diode device provided by the application has higher light-emitting efficiency in a high gray level state, so that the working current of the device in the high gray level state is reduced, and the power consumption of the device is reduced.
Drawings
FIG. 1 is a schematic diagram of an embodiment of a light emitting diode device of the present application;
fig. 2 is a schematic diagram showing the mobility of carriers of the light emitting diode device of the present application as a function of an electric field.
Detailed Description
In order to make the objects, technical solutions and effects of the present application clearer and more specific, the present application will be described in further detail below with reference to the accompanying drawings and examples. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Since the light emitting efficiency of an OLED device is inversely proportional to its operating current, the related art generally has a higher light emitting efficiency at a high gray level in order to reduce the power consumption of the OLED device at a high gray level state. The inventor finds that the above arrangement generally makes the light-emitting efficiency of the OLED device at low gray scale higher, resulting in lower working current, so that the anode of the OLED device is insufficiently initialized when the OLED device is turned on, and the on-time of the OLEDs at different positions of the display panel is different, thereby causing the problem of uneven display color.
In view of the foregoing, the present application provides a light emitting diode device 10, referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of the light emitting diode device of the present application. The light emitting diode device 10 is specifically an OLED device, and includes an anode layer 11, a hole transport layer 12, a light emitting layer 13, an electron transport layer 14, and a cathode layer 15 that are sequentially stacked, where the light emitting layer 13 includes a first light emitting layer 131 and a second light emitting layer 132 that are stacked, the first light emitting layer 131 is located on a side of the second light emitting layer 132 facing the hole transport layer 12, that is, the first light emitting layer 131 is disposed between the hole transport layer 12 and the second light emitting layer 132, and the second light emitting layer 132 is disposed between the first light emitting layer 131 and the electron transport layer 14, where a first triplet excited state energy level of the first light emitting layer 131 is greater than a first triplet excited state energy level of the second light emitting layer 132.
Specifically, the light emitting layer 13 generally includes a Host material Host and a doping material Dopant. The first light emitting layer 131 includes a first Host material Host1 and a first doping material Dopant1, and the second light emitting layer 132 includes a second Host material Host2 and a second doping material Dopant. A light-emitting material having a hole-transporting or electron-transporting function is generally used as a Host material Host, and a small amount of an organic fluorescent or phosphorescent material is doped as a doping material Dopant. The doping proportion is adjusted according to different material characteristics, so that the effect of prolonging the service life and improving the efficiency of the main body luminescence is achieved.
Alternatively, in an embodiment, the first triplet excited state energy level of the first Host material Host1 is greater than the first triplet excited state energy level of the second Host material Host2, i.e., T1 (Host 1) > T1 (Host 2). Specifically, the difference between the first triplet excited state level of the first Host material Host1 and the first triplet excited state level of the second Host material Host2 is greater than 0.2eV, i.e., T1 (Host 1) -T1 (Host 2) >0.2eV. According to the application, the light-emitting layer 13 is of a double-layer structure, and because the T1 energy level of the first Host material Host1 is larger than the T1 energy level of the second Host material Host2, potential barriers are generated between the first light-emitting layer 131 and the second light-emitting layer 132, energy generated during exciton recombination can only be transferred from the first light-emitting layer 131 to the second light-emitting layer 132, but not transferred from the second light-emitting layer 132 to the first light-emitting layer 131, so that the energy generated during exciton recombination of the second light-emitting layer 132 is prevented from being transferred to the first light-emitting layer 131 with lower light-emitting efficiency under the condition of higher voltage, and the energy generated by exciton recombination of the second light-emitting layer 132 is ensured to be always generated in the second light-emitting layer 132, so that the light-emitting diode device 10 is always kept at a higher level under the condition of higher voltage, namely high gray scale, and the device is ensured to have lower power consumption.
In an alternative embodiment, the quantum efficiency of the first doping material Dopant1 is lower than the quantum efficiency of the second doping material Dopant. For example, the first doping material Dopant may include a material having a low quantum efficiency such as a quencher, an organic fluorescent material, and the like, and the second doping material Dopant2 may be a material having a high quantum efficiency such as an organic phosphorescent material, so that the quantum efficiency of the first light emitting layer 131 is lower than that of the second light emitting layer 132. Specifically, the ratio of the quantum efficiency of the first doping material Dopant to the quantum efficiency of the second doping material Dopant is less than or equal to 1/4, for example, the first doping material Dopant1 may be an organic fluorescent material having a quantum efficiency of 25%, and the second doping material Dopant2 may be an organic phosphorescent material having a quantum efficiency of 100%.
In an alternative embodiment, the light emitting efficiency of the light emitting layer 13 may also be changed by adjusting the doping ratio. For example, the materials of the first doping material Dopant and the second doping material Dopant2 may be the same, and the doping ratio of the first doping material Dopant1 is set to be lower than the doping ratio of the second doping material Dopant2, where the doping ratio is defined as a volume ratio of the doping material Dopant to the sum of the Host material Host and the doping material Dopant. Specifically, the doping ratio of the first doping material Dopant, i.e., the first doping ratio, may be 1/4 or less of the doping ratio of the second doping material Dopant2, i.e., the second doping ratio.
The present application also provides a light emitting diode device 10, wherein the light emitting efficiency of the first light emitting layer 131 is lower than the light emitting efficiency of the second light emitting layer 132, and the rising speed of the hole mobility of the hole transporting layer 12 is greater than the rising speed of the electron mobility of the electron transporting layer 14 along with the rising of the voltage.
Specifically, with continued reference to fig. 1 in conjunction with fig. 2, fig. 2 is a schematic diagram of the mobility of carriers of the light emitting diode device of the present application as a function of the electric field. For ease of illustration, FIG. 2 has an abscissa which is the power of 1/2 of the electric field strength and an ordinate which is mobility. Wherein, the solid line is the mobility of the first carrier (i.e. hole) along with the change of the electric field, and the dash-dot line is the mobility of the second carrier (i.e. electron) along with the change of the electric field. Under the driving of a voltage, electrons are injected from the cathode layer 15 to the electron transport layer 14 and migrate to the light emitting layer 13 through the electron transport layer 14 (as shown by dotted arrows in the figure), holes are injected from the anode layer 11 to the hole transport layer 12 and migrate to the light emitting layer 13 through the hole transport layer 12 (as shown by solid arrows in the figure), holes and electrons meet in the light emitting layer 13, and combine to form excitons, excited state energy is transferred by radiation, photons are generated, and energy is released. The present application provides the light emitting layer 13 in a double layer structure, in which, since the mobility of carriers (including electrons and holes) increases with the increase of the electric field intensity of the electric field where the hole transporting layer 12 and the electron transporting layer 14 are located, and the increase of the hole mobility of the hole transporting layer 12 is greater than the increase of the electron mobility of the electron transporting layer 14, i.e., the slope of a solid line is greater than the slope of a broken line, due to the difference of the electron and hole mobilities, the region where the electrons and holes are recombined is close to the hole transporting layer 12, i.e., the exciton recombination zone is located in the first light emitting layer 131 in a low voltage state, at which time the light emitting efficiency of the OLED device is low, and the exciton recombination zone gradually shifts toward the electron transporting layer 14 as the voltage increases, i.e., the exciton recombination zone gradually moves from the first light emitting layer 131 into the second light emitting layer 132, since the light emitting efficiency of the second light emitting layer 132 is higher than the light emitting efficiency of the first light emitting layer 131, and thus the light emitting efficiency of the OLED device in a high voltage state is higher. The light emitting diode device 10 provided by the application has lower light emitting efficiency in a low voltage state, and the voltage is positively correlated with the display gray level, so that the light emitting efficiency of the light emitting diode device 10 in the low gray level state is lower, the working current of the device in the low gray level state is increased, the anode of the device can be fully initialized when the anode of the device is started, and all the devices on the display panel can be started simultaneously, thereby avoiding the problem of uneven color. On the other hand, the light emitting diode device 10 provided by the application has higher light emitting efficiency in the high gray scale state, so that the working current of the device in the high gray scale state is reduced, and the power consumption of the device is reduced.
Further, with continued reference to FIG. 2, the mobility change value K is defined as the ratio of the mobility of the electric field at 1.6X10 5 V/cm (i.e., 400 to the 1/2 power of the electric field strength in the figure) to the mobility of the electric field at 10 4 V/cm (i.e., 100 to the 1/2 power of the electric field strength in the figure), and the ratio of the mobility change value K1 of the holes to the mobility change value K2 of the electrons is greater than or equal to 10, i.e., K1/K2. Gtoreq.10. As can be seen from the figure, in the case where the electric field is low, for example, when the electric field strength is 100 to the power of 1/2, the mobility of holes is lower than the mobility of electrons, so that the position where holes and electrons are recombined is closer to the hole transport layer 12, that is, the exciton recombination zone is located near the first light emitting layer 131 of the hole transport layer 12, the light emitting efficiency is low, and since the mobility variation value K1 of holes is 10 times or more the electron mobility variation value K2, the mobility of holes is rapidly increased with the increase of the electric field, and in the case where the electric field is high, for example, when the electric field strength is 400 to the power of 1/2, the mobility of holes is higher than the mobility of electrons, so that the position where holes and electrons are recombined is closer to the electron transport layer 14, that is, the exciton recombination zone is located near the second light emitting layer 132 of the electron transport layer 14, the light emitting efficiency is high.
Alternatively, the thickness d1 of the first light emitting layer 131 is smaller than the thickness d2 of the second light emitting layer 132 in the lamination direction Z. Specifically, the thickness ratio of the first light emitting layer 131 to the second light emitting layer 132 is less than or equal to 1/3. Since the thickness of the first light emitting layer 131 is smaller, the distance of the first light emitting layer 131 in the stacking direction Z is smaller than the distance of the second light emitting layer 132 in the stacking direction Z, so that the time for holes to enter the second light emitting layer 132 through the first light emitting layer 131 is smaller than the time for electrons to enter the first light emitting layer 131 through the second light emitting layer 132, and thus the holes and electrons are more likely to combine in the second light emitting layer 132 to generate excitons, and further, the exciton combining regions are located in the second light emitting layer 132 with higher light emitting efficiency except for low gray scale, thereby ensuring that the light emitting diode device 10 has lower power consumption.
Alternatively, the light emitting diode device 10 emits light in red or green. Since the light-emitting efficiency of the red light-emitting material and the green light-emitting material is generally high at low gray levels, the red light-emitting diode device 10 and the green light-emitting diode device 10 are more prone to color unevenness caused by too high light-emitting efficiency in the low gray level state, and the red light-emitting diode device 10 is particularly preferred. The light emitting diode device 10 structure of the present application may be applied to only the red light emitting diode device 10, or to both the red light emitting diode device 10 and the green light emitting diode device 10.
The present application also provides a display panel comprising a substrate, and the light emitting diode device 10 of any of the above embodiments disposed on the substrate.
The application also provides a display device which comprises the display panel, and the display device can be a mobile phone, a tablet personal computer, a wearable intelligent device and the like. The display panel and the display device provided by the application ensure low power consumption under high gray scale, improve the problem of uneven color under low gray scale and improve the display effect.
The foregoing is only the embodiments of the present application, and therefore, the patent scope of the application is not limited thereto, and all equivalent structures or equivalent processes using the descriptions of the present application and the accompanying drawings, or direct or indirect application in other related technical fields, are included in the scope of the application.
Claims (10)
1. The light-emitting diode device is characterized by comprising an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode layer which are sequentially stacked, wherein the light-emitting layer comprises a first light-emitting layer and a second light-emitting layer which are stacked, the first light-emitting layer is positioned on one side of the second light-emitting layer facing the hole transport layer, the first light-emitting layer comprises a first main body material, and the second light-emitting layer comprises a second main body material;
wherein the first triplet excited state energy level of the first host material of the first light emitting layer is greater than the first triplet excited state energy level of the second host material of the second light emitting layer.
2. A light emitting diode device as recited in claim 1, wherein,
The difference between the first triplet excited state energy level of the first host material and the first triplet excited state energy level of the second host material is greater than 0.2eV.
3. A light emitting diode device as recited in claim 1, wherein,
The first light emitting layer further includes a first doping material, and the second light emitting layer further includes a second doping material, wherein the quantum efficiency of the first doping material is lower than the quantum efficiency of the second doping material.
4. A light emitting diode device as recited in claim 3, wherein,
The first doping material includes at least one of a quencher or an organic fluorescent material, and/or,
The second doping material comprises an organic phosphorescent material;
preferably, the ratio of the quantum efficiency of the first doping material to the quantum efficiency of the second doping material is less than or equal to 1/4.
5. A light emitting diode device as recited in claim 1, wherein,
The first light-emitting layer further comprises a first doping material, the second light-emitting layer further comprises a second doping material, wherein the first doping proportion is smaller than the second doping proportion, the first doping proportion is the volume ratio of the first doping material to the sum of the first main body material and the first doping material, and the second doping proportion is the volume ratio of the second doping material to the sum of the second main body material and the second doping material;
Preferably, the ratio of the first doping ratio to the second doping ratio is less than or equal to 1/4.
6. A light emitting diode device as recited in claim 1, wherein,
The thickness of the first light-emitting layer is smaller than the thickness of the second light-emitting layer in the lamination direction;
Preferably, the thickness ratio of the first light emitting layer to the second light emitting layer is less than or equal to 1/3.
7. The light-emitting diode device according to claim 1, wherein the first light-emitting layer has a lower light-emitting efficiency than the second light-emitting layer, and wherein a rate of increase in hole mobility of the hole transport layer is greater than a rate of increase in electron mobility of the electron transport layer with an increase in electric field strength of an electric field in which the hole transport layer and the electron transport layer are located;
Preferably, the mobility change value is defined as the ratio of the mobility of the electric field at 1.6x10 5 V/cm to the mobility of the electric field at 10 4 V/cm;
The ratio of the mobility change value of the hole to the mobility change value of the electron is greater than or equal to 10;
preferably, the light emitting color of the light emitting diode device is red or green.
8. The light-emitting diode device is characterized by comprising an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode layer which are sequentially stacked, wherein the light-emitting layer comprises a first light-emitting layer and a second light-emitting layer which are stacked, and the first light-emitting layer is positioned on one side of the hole transport layer, which faces the hole transport layer;
The luminous efficiency of the first luminous layer is lower than that of the second luminous layer, and the rising speed of the hole mobility of the hole transport layer is higher than that of the electron mobility of the electron transport layer along with the rising of the electric field intensity of the electric field where the hole transport layer and the electron transport layer are located.
9. A light emitting diode device as recited in claim 8, wherein,
The mobility change value is defined as the ratio of the mobility of the electric field at 1.6x 5 V/cm to the mobility of the electric field at 10 4 V/cm;
The ratio of the mobility change value of the hole to the mobility change value of the electron is greater than or equal to 10;
Preferably, the mobility of holes at 10 4 V/cm of the electric field is less than the mobility of electrons;
preferably, the light emitting color of the light emitting diode device is red or green.
10. A display panel comprising the light emitting diode device according to any one of claims 1 to 9.
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| CN114597320A (en) * | 2022-02-23 | 2022-06-07 | 京东方科技集团股份有限公司 | Organic electroluminescent device, display panel and display device |
| CN117460300A (en) * | 2023-09-28 | 2024-01-26 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
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