CN119993829A - Laser annealing method and device - Google Patents
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Abstract
本申请涉及半导体芯片制造领域，本申请提供了一种激光退火方法及装置，本申请的方案为：提供激光，激光能够在基板上形成沿第一方向延伸的条形或线形照射区域；使用激光对基板沿第二方向进行交叠的步进式脉冲照射，以对基板进行激光退火，第二方向垂直于第一方向，且将基板沿第二方向上不同周期之间的步长减少，这使得激光束能量在一定周期内对基板进行多次激光照射时，调整了激光束能量照射在基板上的重叠部分，从而将激光束的低能量部分在基板上转化成高能量，以使其在基板上的结晶与激光束的高能量部分的结晶效果保持一致，实现基板上的结晶高度均匀，从而提高芯片的生产工艺效果，工艺窗口变宽。
The present application relates to the field of semiconductor chip manufacturing. The present application provides a laser annealing method and device. The scheme of the present application is: providing a laser, the laser can form a strip or linear irradiation area extending along a first direction on a substrate; using the laser to perform overlapping step-by-step pulse irradiation on the substrate along a second direction to perform laser annealing on the substrate, the second direction is perpendicular to the first direction, and the step length between different periods of the substrate along the second direction is reduced, so that when the laser beam energy performs multiple laser irradiations on the substrate within a certain period, the overlapping part of the laser beam energy irradiated on the substrate is adjusted, thereby converting the low-energy part of the laser beam into high energy on the substrate, so that its crystallization on the substrate is consistent with the crystallization effect of the high-energy part of the laser beam, and the crystallization height on the substrate is achieved. Uniformity, thereby improving the production process effect of the chip, and widening the process window.
Description
Technical Field
The present application relates to the field of semiconductor chip manufacturing, and in particular, to a laser annealing method and apparatus.
Background
In the chip or panel production process, it is an important process to perform laser annealing (also called LASER ANNEAL) on a substrate (e.g., a wafer) to crystallize amorphous silicon (Amorphous Silicon, ASI). In the laser annealing process, in order to make ASI crystallization degree sufficiently uniform, it is required that the laser beam energy of the laser be transferred to the substrate sufficiently uniform. However, the energy distribution of the laser Beam (also called Beam Profile) generated by the existing laser is not uniform, so that the energy of the laser Beam received by different positions on the substrate is different when the substrate is irradiated by the laser, and the change of the crystallization degree is more obvious at the position with lower energy than at the position with higher energy on the substrate (namely, the size of the crystal grain at the position with lower energy is far larger than that at the position with high energy), so that the crystallization non-uniformity and the process window (also called process window) on the final substrate are narrowed.
In view of the foregoing, there is a need for a laser annealing scheme that is capable of sufficiently uniform crystallization on a substrate.
Disclosure of Invention
The application provides a laser annealing method and a device, which are used for solving the problem of uneven crystallization caused by uneven laser irradiation of laser beam energy on a substrate.
A first aspect of the present application provides a laser annealing method comprising:
providing a laser capable of forming a stripe-shaped or line-shaped irradiation region extending in a first direction on a substrate;
Performing overlapping step pulse irradiation on the substrate along a second direction by using laser so as to perform laser annealing on the substrate, wherein the second direction is perpendicular to the first direction, and the step pulse irradiation comprises the following steps:
The irradiation area has a preset width w along the second direction, the irradiation area comprises a first area, a middle area and a second area which are arranged along the second direction, the laser has uniform energy distribution in the middle area, and the laser has energy distribution attenuated along the direction far away from the middle area in the first area and the second area;
The step-by-step pulse irradiation of the substrate along the second direction by using laser comprises relatively moving an irradiation area and the substrate by a preset step length, wherein the preset step length is a first step length m in a period, one step is included between two adjacent periods, and the preset step length between the two adjacent periods is a second step length, the second step length is smaller than the first step length, and the second step length is larger than the width of any one of the first area and the second area in the second direction;
a positive integer N is present such that w=n×m, the period comprising X times the pulse irradiation, the X being an integer multiple of N.
In some embodiments of the application, x=n.
In some embodiments of the application, the first region and the second region have a first width and a second width in the second direction, and the difference between the first step size and the second step size is greater than or equal to the sum of the first width and the second width.
In some embodiments of the present application, relatively moving the irradiation region and the substrate by a preset step length includes:
In the period, the substrate moves at a first speed at a uniform speed;
between adjacent periods, the average speed of the substrate is a second speed, the second speed being less than the first speed.
In some embodiments of the application, the substrate comprises amorphous silicon.
A second aspect of the present application provides a laser annealing apparatus, the apparatus comprising:
a carrier for placing the substrate;
The laser is used for generating laser, the laser can form a strip-shaped or linear irradiation area extending along a first direction on the substrate, the irradiation area has a preset width along a second direction, the irradiation area comprises a first area, a middle area and a second area which are arranged along the second direction, the laser has uniform energy distribution in the middle area, and the laser has energy distribution attenuated along a direction far away from the middle area in the first area and the second area;
The controller can control the carrier to move along the second direction so as to use the laser to perform overlapping step-by-step pulse irradiation on the substrate along the second direction and perform laser annealing on the substrate;
The step-by-step pulse irradiation of the substrate along the second direction by using laser comprises relatively moving an irradiation area and the substrate by a preset step length, wherein the preset step length is a first step length in a period, one step is included between two adjacent periods, and the preset step length between the two adjacent periods is a second step length, the second step length is smaller than the first step length, and the second step length is larger than the width of any one of the first area and the second area in the second direction;
a positive integer N is present such that w=n×m, the period comprising X pulse shots, X being an integer multiple of N.
In some embodiments of the application, the first region and the second region have a first width and a second width in the second direction, and the difference between the first step size and the second step size is greater than or equal to the sum of the first width and the second width.
In some embodiments of the application, relatively moving the illuminated area and the substrate in a predetermined step size includes the controller being capable of controlling the stage to move at a variable speed such that the substrate moves at a constant speed during a period at a first speed, and the average speed of the substrate is a second speed between adjacent periods, the second speed being less than the first speed.
In some embodiments of the application, x=n.
In some embodiments of the application, the controller is capable of adjusting at least one of a preset step size, a preset width, a first width, and a second width.
The application has the following beneficial effects:
The application adopts the scheme that laser is provided, the laser can form a strip-shaped or linear irradiation area extending along a first direction on a substrate, the substrate is subjected to overlapped stepping pulse irradiation along a second direction by using the laser so as to carry out laser annealing on the substrate, the second direction is perpendicular to the first direction, and the step length between different periods of the substrate along the second direction is reduced, so that when the laser beam energy irradiates the substrate for multiple times in a certain period, the overlapped part of the laser beam energy on the substrate is adjusted, thereby converting the low energy part of the laser beam into high energy on the substrate, keeping the crystallization effect of the low energy part of the laser beam on the substrate consistent with the crystallization effect of the high energy part of the laser beam, realizing uniform crystallization height on the substrate, improving the production process effect of chips and widening a process window.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.
FIG. 1 is a schematic diagram showing the relationship between two crystallization mechanisms and laser annealing energy provided by the application;
FIG. 2 is a first exemplary schematic diagram of a prior art laser annealing scheme provided by the present application;
FIG. 3 is a second exemplary schematic diagram of a prior art laser annealing scheme provided by the present application;
FIG. 4 is a schematic view of laser energy distribution of a prior art laser annealing scheme provided by the present application;
FIG. 5 is a schematic view of laser annealing energy of a prior art laser annealing scheme provided by the present application;
FIG. 6 is a graph of total energy of laser annealing for a prior art laser annealing scheme provided by the present application;
FIG. 7 is a schematic flow chart of a first embodiment of a laser annealing method according to the present application;
FIG. 8 is a schematic view of laser annealing energy according to a second embodiment of the laser annealing scheme provided by the present application;
FIG. 9 is a schematic view of laser annealing energy according to a third embodiment of the laser annealing scheme provided by the present application;
Fig. 10 is a schematic diagram of a frame of an embodiment of a laser annealing device according to the present application.
Detailed Description
The following describes embodiments of the present application in detail with reference to the drawings.
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, interfaces, techniques, etc., in order to provide a thorough understanding of the present application.
The term "and/or" is merely an association relationship describing the associated object, and means that three relationships may exist, for example, a and/or B may mean that a exists alone, while a and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship. Further, "a plurality" herein means two or more than two. In addition, the term "at least one" herein means any one of a plurality or any combination of at least two of a plurality, for example, including at least one of A, B, C, may mean including any one or more elements selected from the group consisting of A, B and C.
As described in the background art, the energy distribution of the laser Beam (also called Beam Profile) generated by the existing laser is not uniform, resulting in different energy of the laser Beam received at different positions on the substrate when the substrate is irradiated with the laser, and the change of the crystallization degree is more obvious at the position of the substrate where the energy is lower than at the position of the substrate where the energy is higher (i.e. the size of the crystal grain at the position where the energy is lower is much larger than that at the position where the energy is high), resulting in non-uniform crystallization and narrowing of the process window (also called process window) on the final substrate.
The reason why the existing laser annealing method causes the crystallization non-uniformity on the substrate is described below in conjunction with the laser annealing crystallization principle and the related drawings.
In the laser annealing of amorphous silicon, the crystallization principle mainly has two mechanisms, i.e., heterogeneous nucleation temperature point (also called solid phase crystallization temperature point) and spontaneous nucleation temperature point. The heterogeneous nucleation temperature point is easier to crystallize at the impurity or defect, so that the required temperature is lower, and the spontaneous nucleation temperature point is independent of the impurity or defect, so that the requirement on the temperature is higher, namely, the spontaneous nucleation temperature point is higher than the heterogeneous nucleation temperature point. Wherein, crystallization occurs at both spontaneous nucleation temperature point and heterogeneous nucleation temperature point, and small grains can be formed. In the process of gradually increasing from the heteronucleation temperature point to the spontaneous nucleation temperature point, as the temperature increases, the grain size after crystallization increases and then decreases, i.e., crystallization at an intermediate temperature point between the spontaneous nucleation temperature point and the heteronucleation temperature point will form large grains whose grain size is larger than those formed by crystallization at the spontaneous nucleation temperature point and the heteronucleation temperature point.
Typically, the temperature of the laser anneal is selected to be above the spontaneous nucleation temperature point. When the temperature becomes low, the crystallization mechanism is converted, spontaneous nucleation is greatly reduced, the grain size is not constrained at the intermediate temperature point between the spontaneous nucleation temperature point and the heterogeneous nucleation temperature point, and suddenly changes (becomes large), and after the temperature becomes high, the crystallization mechanism is not changed, and the grain size is not suddenly changed. For example, as shown in fig. 1, an example of a laser pulse irradiation annealing process is shown in which energy distribution on a laser irradiation region is for forming a spontaneous nucleation temperature point and a heterogeneous nucleation temperature point simultaneously in amorphous silicon, and as can be seen from fig. 1 to 4, a stripe-shaped or line-shaped irradiation region extending in a first direction can be formed on the surface of amorphous silicon by laser pulse, the energy distribution in a second direction is trapezoid or nearly trapezoid (the second direction is perpendicular to the first direction), the high energy uniformity portion (middle region) located in the middle, and the energy attenuation portions (first region, second region) located on both sides are included, when the substrate is subjected to laser annealing, amorphous silicon is heated by laser of the high energy uniformity portion, the temperature is at the spontaneous nucleation temperature point, the lower energy portion of the amorphous silicon is heated by laser of the heterogeneous nucleation temperature point, at the spontaneous nucleation temperature point and the heterogeneous nucleation temperature point, and the amorphous silicon crystals form uniformly small grains on the substrate, but when the energy of the amorphous silicon is heated by the energy uniformity portion is at the middle temperature, the temperature is between the spontaneous nucleation temperature point and the heterogeneous nucleation temperature point, and the temperature is easy to form.
Fig. 2 to 5 are schematic diagrams illustrating an example of a laser annealing method in the prior art, where the laser annealing method includes:
Providing a light source (light source example is shown by arrow (1) in fig. 2), the light source being capable of emitting laser light, the laser light being capable of forming a stripe-shaped or line-shaped irradiation region (irradiation region example is shown by arrow (3) in fig. 2 and arrow (6) in fig. 3) extending in a first direction (first direction example is shown by arrow (2) in fig. 2) on a substrate (e.g., a wafer) as shown by arrow (2) in fig. 2), the laser light being capable of forming an isosceles trapezoid-shaped energy distribution in the irradiation region, respectively, a first region (first region example is shown by arrow (1) in fig. 3), an intermediate region (intermediate region example is shown by arrow (3) in fig. 3) and a second region (second region example is shown by arrow (2) in fig. 3), the energy distribution of the intermediate region being uniform, the first region and the second region having an energy distribution (energy distribution example is shown by arrow (2) decaying in a direction away from the intermediate region as shown in fig. 4). The substrate is irradiated with a step-wise pulse overlapping in the second direction using a laser (an example of overlapping step-wise pulse irradiation is shown with reference to fig. 5), and the irradiation region and the substrate are relatively moved by a constant preset step m.
In the prior art, the energy of the laser irradiation in the second direction is approximately considered to be uniform. In this prior art example, the irradiation region has a width w in the second direction, w being an integer multiple of the preset step size m, so that the energy of laser irradiation is uniformly distributed across the substrate surface. However, after the laser annealing method, since the first region and the second region exist, the total energy distribution of the energy corresponding to the laser in each region on the substrate is shown in fig. 6, and as can be seen from fig. 5 and 6, the energy density of the p region on the substrate is significantly greater than that of the q region on the substrate (the p region is irradiated with the laser of the 4-time high-energy uniform portion, the q region is irradiated with the laser of 5 times, but includes the laser of the 3-time high-energy uniform portion, and the laser of the 2-time energy attenuation portion, and the total irradiation energy is lower than that of the p region). In the amorphous silicon annealing crystallization process, the energy of the p region is configured such that the amorphous silicon reaches a spontaneous nucleation temperature point to form small grains in an irradiation region corresponding to the p region, and the energy of the q region may cause the amorphous silicon to reach an intermediate temperature point between the spontaneous nucleation temperature point and the heterogeneous nucleation temperature point to form large grains in the irradiation region corresponding to the q region. Thereby, the crystallization uniformity is lowered.
The inventor finds that the current method for solving the crystallization non-uniformity on the substrate is that each laser generator continuously improves the uniformity of the distribution of the laser energy in the irradiation area, but the optical path system cannot make the distribution of the laser energy perfect, and only the low-energy part (i.e. the first area and the second area) can be reduced as much as possible so that the distribution of the laser energy is more rectangular, and the low-energy part of the distribution of the laser energy cannot be completely eliminated. As long as there is a low energy portion in the laser energy distribution, the laser is irradiated on the substrate in overlapping stepwise pulses, and a crystallization unevenness phenomenon occurs.
Meanwhile, the width of the low-energy part in the second direction is very narrow, on the premise of not adjusting the laser energy distribution (such as adjusting the width of a first area and a second area), the coincidence of the first area and the second area between two pulses in one line of step pulse scanning is difficult to realize, the adjustment of the laser energy distribution needs to adjust a light path system of a laser, the difficulty is high, the cost is high, the adjustment amplitude is limited, the laser irradiation times are increased, the production efficiency is reduced, the matching between the laser pulse energy and the step length increases the process control difficulty, the q area cannot be completely eliminated, and the adjustment of the laser pulse energy possibly increases the equipment cost due to the limited laser irradiation energy adjustment range of the laser.
In order to solve the above problems, the present application proposes a new laser annealing scheme in which the step size between different periods (one period includes multiple steps) of the substrate in the second direction is reduced, so that when the laser beam energy irradiates the substrate multiple times in a certain period, the overlapping (also called as Over l ap) portion of the laser beam energy irradiated on the substrate is adjusted, thereby reducing or eliminating q-region, improving the uniformity of laser annealing crystallization, and at the same time, the effect on p-region is smaller, so that the energy of the laser pulse is not required to be adjusted, and further, since the step size is adjusted once every other period, the laser irradiation frequency is not greatly increased, and the effect on the production efficiency is lower.
According to an embodiment of the present application, there is provided a laser annealing method, as shown in fig. 7, including:
S1, providing laser, wherein the laser can form a strip-shaped or linear irradiation area extending along a first direction on a substrate;
S2, overlapping step pulse irradiation is carried out on the substrate along a second direction by using laser so as to carry out laser annealing on the substrate, wherein the second direction is perpendicular to the first direction.
Specifically, the irradiation region has a preset width along the second direction, the irradiation region comprises a first region, a middle region and a second region which are arranged in the second direction, the laser has uniform energy distribution in the middle region, and the laser has energy distribution attenuated along the direction far away from the middle region in the first region and the second region;
The step-by-step pulse irradiation of the substrate along the second direction by using laser comprises relatively moving an irradiation area and the substrate by a preset step length, wherein the preset step length is a first step length in a period, one step is included between two adjacent periods, and the preset step length between the two adjacent periods is a second step length, the second step length is smaller than the first step length, and the second step length is larger than the width of any one of the first area and the second area in the second direction;
a positive integer N is present such that w=n×m, the period comprising X times said pulse irradiation, X being an integer multiple of N.
The preset step length corresponds to the step-by-step pulse irradiation one by one, namely the irradiation area and the substrate are moved once according to the preset step length, and then the laser irradiates the substrate with one pulse. It can be understood that the steps are performed multiple times in a period, the preset step length of each step is a first step length, and the steps can be performed once between adjacent periods, and the preset step length is a second step length.
The above-described embodiments of the present application divide the movement of the substrate during crystallization into a plurality of periods based on the number of irradiation steps of the laser energy in the second direction on the substrate, and set the second step length of the movement between the periods to be smaller than the first step length of the movement within the periods. This method adjusts the overlapping (also called Over l ap) portion of the laser beam energy irradiated on the substrate, since the second step is smaller than the first step, the irradiation regions of the second period and other periods after the second period are all close to the first period, thereby reducing or even eliminating the q-region, i.e., reducing the lower energy region, and improving the uniformity of the laser annealing.
It will be appreciated that each cycle includes X laser pulse shots, since X is an integer multiple of N and w is N times m, when the preset step length is always m, the x+1th to x+nth laser shots necessarily form q regions, i.e., lower energy regions, one by one with the X-n+1 th to X th laser shots in the previous X laser shots. The present application can overlap the laser irradiation in the next cycle with the laser irradiation in the previous cycle by making the second step smaller than the first step, thereby reducing or eliminating the q-region. Meanwhile, by controlling the second step length to be larger than any one of the widths of the first region and the second region, the p region is prevented from being reduced to 0, the annealing temperature is prevented from being too high, and the process difficulty and the cost caused by laser energy adjustment are also prevented from being increased. Further, since the first step length of stepping in the period is unchanged, the increasing amplitude of step length adjustment to the step length times is reduced, laser pulse energy adjustment caused by step length adjustment is avoided, and the process difficulty and the production cost are reduced.
In a preferred embodiment, still referring to fig. 4, the first and second regions have a first width a and a second width b in the second direction, the difference between the first and second steps being greater than or equal to the sum of the first and second widths a and b. Since the width of the q region is the sum of the first width a and the second width b, the q region can be completely eliminated when the second step size is reduced by at least (a+b) with respect to the first step size, thereby making the laser annealing uniform. It can be appreciated that when the first width and the second width are narrower, the difference between the first step size and the second step size is larger than the sum of the first width and the second width, so that the difficulty in controlling the preset step size can be reduced.
In a preferred embodiment, x=n. Thus, each laser pulse in the latter period can overlap with the corresponding pulse in the former period, thereby reducing or eliminating each q area and improving the uniformity of laser annealing.
In a preferred embodiment, the difference between the first step size and the second step size is greater than or equal to the sum of the first width a and the second width b, and x=n, thereby realizing that each q region is eliminated and improving the uniformity of laser annealing.
The preferred embodiments of the present application and their technical effects will be described below with reference to fig. 2 to 4 and 8 to 9.
In step S1, the method of providing laser light is as shown in fig. 2 to 4, which is the same as the prior art.
Specifically, as can be seen from fig. 4, the laser pulse can form a stripe-shaped or line-shaped irradiation area extending along the first direction on the surface of the amorphous silicon, and the energy distribution along the second direction is trapezoidal or approximately trapezoidal, including a high-energy uniform portion (middle region) located in the middle, and energy attenuation portions (first region, second region) located at two sides, wherein in the second direction, the preset width of the irradiation area is w, the width of the first region is a, and the width of the second region is b. In the present embodiment, the energy distribution of the laser light in the second direction on the irradiation region is isosceles trapezoid, that is, a=b.
In this embodiment, the substrate includes amorphous silicon, and the laser annealing method is used to anneal the amorphous silicon to crystallize the amorphous silicon and form polycrystalline silicon.
In the prior art shown in fig. 5, between the first period and the second period, the first laser pulse of the first period is adjacent to the end of the first laser pulse of the second period to form a q-region, and the second to fourth pulses are identical.
In step S2 of the present embodiment, as shown in fig. 8, the first step is m, w=4m, and a=b, and 4 step pulses are performed in one cycle, that is, x=n=4, and the second step is m-2a between adjacent cycles.
The second step size between the first period and the second period is m-2a, so that the left end of each laser pulse of the first period overlaps with the right end of a corresponding laser pulse of the second period. Specifically, the left end of each laser pulse of the first period overlaps with the middle region of a corresponding laser pulse of the second period, thereby eliminating the q region where the laser irradiation density is low and improving the uniformity of laser annealing.
In the technical solution shown in this embodiment (fig. 8), compared with the prior art (fig. 5), the total q region can be eliminated, the total laser irradiation energy on the remaining p region is kept unchanged, and the r region with the laser irradiation energy higher than that of the p region is formed.
In this embodiment, after shortening the preset step length between periods, the width of the portion of the original p-region where the laser irradiation energy is uniform in the second direction is reduced, the total laser irradiation energy in the region where the left end of the first laser pulse of the first period overlaps with the middle region of the first laser pulse of the second period is increased to be greater than the total laser irradiation energy of the original p-region, and an r-region is formed. In addition, since the widths of the first region and the second region are narrower, the width of the p region is reduced by a smaller magnitude, and the region where the left end of the first laser pulse of the first period overlaps with the middle region of the first laser pulse of the second period is also smaller, the influence on the temperature in the overall laser annealing is smaller. Therefore, the uniformity of laser annealing can be improved, the adjustment of the energy of laser pulses can be avoided, and the process cost and the process difficulty are reduced.
Referring to the embodiment shown in fig. 9, the first step is m, w=4m, a=b, 4 steps are performed in one cycle, the second step is a, and the p region (p region is a thick dotted line portion in fig. 9) width is 0 between adjacent cycles, resulting in an excessive substrate laser annealing temperature (e.g., an excessive temperature in an s region portion in fig. 9), so that m > a and m > b are required.
In some embodiments, the substrate is in uniform motion and the laser pulses are applied in pulses, and because each application of a laser pulse is short, the substrate is approximately considered stationary during the laser application, thus forming overlapping stepped pulse applications. The second step size may be made smaller than the first step size by adjusting the interval between laser pulse shots.
The embodiment of the application can reduce the control difficulty of the relative movement between the substrate and the irradiation area, and realize the accurate control and repeatability of each laser irradiation position, thereby ensuring the consistency of overlapping between adjacent irradiation areas and the uniformity of the whole treatment surface and improving the uniformity of crystallization on the substrate.
In some embodiments, the substrate is moved in a pulse mode, when the substrate and the irradiation area are relatively static in the laser pulse irradiation process, after the laser is turned off, the substrate is moved according to a preset step length, after one movement is completed, the laser is turned on, the irradiation area and the substrate are relatively static, and the above actions are repeated to form overlapped step-type pulse irradiation.
According to the embodiment of the application, short pause and position adjustment can be accurately performed after each laser irradiation, so that each irradiation point is ensured to obtain sufficient and consistent energy input, meanwhile, the overlapping between adjacent irradiation areas is more accurate and controllable, the dynamic error possibly caused by continuous movement is effectively avoided, the consistency and repeatability of treatment are ensured, and the uniformity of crystallization on a substrate is improved. In addition, pulsed movement allows for self-correction after each movement, enhancing the flexibility and adaptability of the process.
In some embodiments, the laser pulses are applied, the substrate is moved at a variable speed, and because the laser pulses are applied for a short time, the substrate is approximately considered stationary during the laser application, thus forming overlapping stepped pulse applications. The second step size may be made smaller than the first step size by adjusting the movement speed of the substrate, for example, the substrate keeps moving at a constant speed in each period and the substrate movement speed is reduced between each period. Specifically, the irradiation area and the substrate are relatively moved in a preset step length, including a variable speed motion, that is, the substrate moves at a constant speed at a first speed during a period, and an average speed of the substrate is a second speed between adjacent periods, the second speed being smaller than the first speed. Alternatively, the substrate continues to move.
The embodiment of the application can reduce the difficulty of controlling the light source, reduce the difficulty of controlling the relative motion between the substrate and the irradiation area, and simultaneously reduce the influence of the motion-static state change on the substrate in the process of the relative motion between the substrate and the irradiation area.
But not limited thereto, in some embodiments, the substrate is held stationary and the irradiated area of the laser pulses is moved, such as by uniform motion of the light source, variable speed motion, or pulsed movement, and similarly, overlapping stepped pulse irradiation may be achieved.
The application is not particularly limited in the manner of relative movement between the substrate and the irradiation region, as long as the step-by-step pulse irradiation of the laser beam to the substrate overlapping in the second direction can be realized, and the second step length is smaller than the first step length and the second step length is larger than the width of any one of the first region and the second region in the second direction.
Further, according to an embodiment of the present application, there is provided a laser annealing apparatus, as shown in fig. 10, including:
a carrier for placing the substrate;
The laser is used for generating laser, the laser can form a strip-shaped or linear irradiation area extending along a first direction on the substrate, the irradiation area has a preset width along a second direction, the irradiation area comprises a first area, a middle area and a second area which are arranged along the second direction, the laser has uniform energy distribution in the middle area, and the laser has energy distribution attenuated along a direction far away from the middle area in the first area and the second area;
The controller can control the carrier to move along the second direction so as to use the laser to perform overlapping step-by-step pulse irradiation on the substrate along the second direction and perform laser annealing on the substrate;
The step-by-step pulse irradiation of the substrate along the second direction by using laser comprises relatively moving an irradiation area and the substrate by a preset step length, wherein the preset step length is a first step length in a period, one step is included between two adjacent periods, and the preset step length between the two adjacent periods is a second step length, the second step length is smaller than the first step length, and the second step length is larger than the width of any one of the first area and the second area in the second direction;
a positive integer N is present such that w=n×m, the period comprising X pulse shots, X being an integer multiple of N.
According to the embodiment of the application, the precise cooperative control of the carrier and the laser is realized through the controller, so that the method is realized, and the details are not repeated here.
The controller can control at least one of the switching frequency of the laser irradiation and the motion of the stage to relatively move the irradiation area and the substrate by a preset step length, for example, the foregoing various embodiments have the same technical effects, and are not repeated here.
It will be appreciated that the movement of the control stage is simpler than controlling the energy distribution of the laser emitted by the laser, or controlling the pulse frequency of the laser. Thus, in a preferred embodiment, the controller is capable of controlling the stage to perform the aforementioned variable speed motion, thereby effecting relative movement of the irradiation region and the substrate in preset steps. Specifically, the controller is capable of controlling the stage to move at a variable speed such that the substrate moves at a constant speed at a first speed during a cycle and an average speed of the substrate is a second speed between adjacent cycles, the second speed being less than the first speed.
Wherein, according to an embodiment of the present application, the controller is capable of adjusting at least one of a preset step size, a preset width, a first width, and a second width. For example, the controller adjusts the preset step length according to the first width, the second width and the preset width of the laser emitted by the laser to realize the method.
According to a preferred embodiment of the present application, the laser annealing device is capable of controlling x=n, and/or the difference between the first step size and the second step size is greater than or equal to the sum of the first width and the second width.
In summary, compared with the existing step-by-step pulse irradiation of overlapping the substrate along the second direction by using the laser, and the irradiation area and the substrate are relatively moved by using a constant step length, the step length between different periods of the substrate along the second direction is reduced, so that when the laser beam energy irradiates the substrate for multiple times within a certain period, the overlapping part of the laser beam energy irradiated on the substrate is adjusted, thereby converting the low energy part of the laser beam into high energy on the substrate, so that the crystallization effect of the low energy part of the laser beam on the substrate is consistent with the crystallization effect of the high energy part of the laser beam, the uniformity of the crystallization height on the substrate is realized, the production process effect of chips is improved, and the process window is widened.
Claims (10)
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