CN110034223A - A kind of large power white light LED lamp bead - Google Patents
A kind of large power white light LED lamp bead Download PDFInfo
- Publication number
- CN110034223A CN110034223A CN201910190752.1A CN201910190752A CN110034223A CN 110034223 A CN110034223 A CN 110034223A CN 201910190752 A CN201910190752 A CN 201910190752A CN 110034223 A CN110034223 A CN 110034223A
- Authority
- CN
- China
- Prior art keywords
- lamp bead
- led lamp
- fluorescent
- layer
- adhesive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011324 bead Substances 0.000 title claims abstract description 53
- 239000012790 adhesive layer Substances 0.000 claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 239000004332 silver Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 81
- 239000003292 glue Substances 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- 108010043121 Green Fluorescent Proteins Proteins 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
Landscapes
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
技术领域technical field
本发明涉及LED制造技术领域，特别涉及一种大功率白光LED灯珠。The invention relates to the technical field of LED manufacturing, in particular to a high-power white light LED lamp bead.
背景技术Background technique
LED灯珠中，支架碗杯的底部设置有镀银层。现有的大功率白光LED灯珠可以在碗杯中设置多个LED芯片来提高发光亮度，但是灯珠点亮后碗杯底部热量集中，使用一段时间后此处的镀银层发黄甚至黑化，导致灯珠发光逐渐变暗。如果将碗杯底部设置得较小，即：减少碗杯底部镀银层的面积，让LED发出的光尽可能与碗杯侧壁接触并被反射出去；则碗杯底部太小导致不能设置多个LED芯片。此外，现有的白光LED灯珠中荧光胶层中均匀地混有两种或两种以上不同的荧光粉，存在发光效率不高的缺点。因此，有必要提出一种方案，能够提高碗杯底部的反光效果，以便于将碗杯底部设置得相对较大以容纳多个LED芯片，并且提高荧光胶层的结构，提高发光效率。In the LED lamp beads, the bottom of the bracket bowl is provided with a silver-plated layer. The existing high-power white LED lamp beads can set multiple LED chips in the bowl to improve the luminous brightness, but after the lamp beads are lit, the heat at the bottom of the bowl is concentrated, and the silver-plated layer here turns yellow or even black after a period of use , which causes the light of the lamp bead to gradually dim. If the bottom of the bowl is set smaller, that is: reduce the area of the silver-plated layer at the bottom of the bowl, and let the light emitted by the LED contact the side wall of the bowl as much as possible and be reflected; then the bottom of the bowl is too small to set more LED chips. In addition, in the existing white LED lamp beads, two or more different phosphor powders are uniformly mixed in the fluorescent glue layer, which has the disadvantage of low luminous efficiency. Therefore, it is necessary to propose a solution that can improve the reflection effect of the bottom of the bowl, so that the bottom of the bowl can be set relatively large to accommodate multiple LED chips, and the structure of the fluorescent glue layer can be improved to improve the luminous efficiency.
可见，现有技术还有待改进和提高。It can be seen that the existing technology still needs to be improved and improved.
发明内容SUMMARY OF THE INVENTION
鉴于上述现有技术的不足之处，本发明的目的在于提供一种大功率白光LED灯珠，旨在解决现有技术中大功率白光LED灯珠的碗杯底部镀银层反光效果一般、灯珠发光效率不高的技术问题。In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a high-power white LED lamp bead, which aims to solve the problem that the silver-plated layer on the bottom of the bowl and cup of the high-power white LED lamp in the prior art has a general reflective effect, and the lamp The technical problem of low luminous efficiency of beads.
为了达到上述目的，本发明采取了以下技术方案：In order to achieve the above object, the present invention has adopted the following technical solutions:
一种大功率白光LED灯珠，包括支架和三个LED芯片，支架上开设有一个凹口，三个LED芯片设置在凹口中；所述凹口自底部向上依次设置有镀银层、白胶层和第一荧光胶层、第二荧光胶层和第三荧光胶层；所述白胶层的上表面为平面，白胶层的上表面低于各个LED芯片的上表面；所述第一荧光胶层包含红光荧光粉，第二荧光胶层包含黄光荧光粉，第三荧光胶层包含绿光荧光粉；所述第三荧光胶层的上表面与支架的上表面平齐。A high-power white LED lamp bead comprises a bracket and three LED chips, a notch is opened on the bracket, and the three LED chips are arranged in the notch; the notch is sequentially provided with a silver-plated layer and a white glue layer from the bottom to the top. layer and the first fluorescent glue layer, the second fluorescent glue layer and the third fluorescent glue layer; the upper surface of the white glue layer is flat, and the upper surface of the white glue layer is lower than the upper surface of each LED chip; the first The fluorescent glue layer contains red fluorescent powder, the second fluorescent adhesive layer contains yellow fluorescent powder, and the third fluorescent adhesive layer contains green fluorescent powder; the upper surface of the third fluorescent adhesive layer is flush with the upper surface of the bracket.
所述的大功率白光LED灯珠中，三个LED芯片规格相同，三个LED芯片的高度位置相同。In the high-power white LED lamp beads, the specifications of the three LED chips are the same, and the height positions of the three LED chips are the same.
所述的大功率白光LED灯珠中，三个LED芯片以等边三角形的方式排列。In the high-power white LED lamp beads, three LED chips are arranged in an equilateral triangle.
所述的大功率白光LED灯珠中，设置在凹口底部的镀银层的厚度为10～20微英寸。In the high-power white LED lamp beads, the thickness of the silver-plated layer disposed at the bottom of the notch is 10-20 microinches.
所述的大功率白光LED灯珠中，所述荧光胶层上方设置有透明的硅胶层，该硅胶层将整个支架上表面覆盖。In the high-power white LED lamp beads, a transparent silica gel layer is arranged above the fluorescent glue layer, and the silica gel layer covers the entire upper surface of the bracket.
所述的大功率白光LED灯珠中，所述凹口的水平截面呈圆形。In the high-power white LED lamp bead, the horizontal section of the notch is circular.
所述的大功率白光LED灯珠中，所述凹口的侧壁设置有第二镀银层，该第二镀银层为镜面亮银。In the high-power white LED lamp bead, the side wall of the recess is provided with a second silver-plated layer, and the second silver-plated layer is mirror bright silver.
所述的大功率白光LED灯珠中，所述凹口的侧壁是磨砂面。In the high-power white LED lamp bead, the side wall of the notch is a frosted surface.
所述的大功率白光LED灯珠中，凹口的侧壁的粗糙度Ra为50～80微米。In the high-power white LED lamp bead, the roughness Ra of the side wall of the notch is 50-80 microns.
有益效果：本发明提供了一种大功率白光LED灯珠中，相比现有技术，通过在支架的凹口底部设置镀银层，而在镀银层上设置白胶层用来反光，提高了凹口底部的反光效果，使得本发明所述的灯珠比普通的三芯片的灯珠的发光效率更高。且使用一段时间后，即使凹口底部的镀银层发生氧化并不影响白胶层的反光效果，灯珠的整体发光效果未受影响；此外，光线经过第一荧光胶层、第二荧光胶层和第三荧光胶层的能量损失得到降低。简言之，本发明提供的大功率白光LED灯珠发光效率得到提高，且不会像现有的LED灯珠那样使用一段时间后亮度逐渐变暗。Beneficial effects: The present invention provides a high-power white light LED lamp bead. Compared with the prior art, a silver-plated layer is arranged at the bottom of the notch of the bracket, and a white glue layer is arranged on the silver-plated layer to reflect light. The reflective effect at the bottom of the notch is improved, so that the lamp bead of the present invention has higher luminous efficiency than the ordinary three-chip lamp bead. And after a period of use, even if the silver-plated layer at the bottom of the notch is oxidized, the reflective effect of the white glue layer will not be affected, and the overall lighting effect of the lamp bead will not be affected; in addition, the light passes through the first fluorescent glue layer and the second fluorescent glue. The energy loss of the layer and the third phosphor layer is reduced. In short, the luminous efficiency of the high-power white LED lamp beads provided by the present invention is improved, and the brightness will not gradually dim after a period of use like the existing LED lamp beads.
附图说明Description of drawings
图1为本发明提供的大功率白光LED灯珠的主视图。FIG. 1 is a front view of a high-power white LED lamp bead provided by the present invention.
图2为本发明提供的大功率白光LED灯珠的俯视图。FIG. 2 is a top view of the high-power white light LED lamp bead provided by the present invention.
具体实施方式Detailed ways
本发明提供一种大功率白光LED灯珠，为使本发明的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。The present invention provides a high-power white light LED lamp bead. In order to make the purpose, technical solutions and effects of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.
请参阅图1和图2，本发明提供一种大功率白光LED灯珠。本文所述“上”、“下”、“底”等方位词示意图1视角进行描述，目的在于便于阐述，而不在于限定本发明。附图近用于解释所述大功率白光LED灯珠的结构原理，不与实际产品成比例。Please refer to FIG. 1 and FIG. 2 , the present invention provides a high-power white LED lamp bead. The directional words such as "upper", "lower" and "bottom" mentioned herein are described from the perspective of schematic diagram 1, for the purpose of facilitating the description, rather than limiting the present invention. The attached drawings are used to explain the structure principle of the high-power white LED lamp bead, and are not proportional to the actual product.
所述大功率白光LED灯珠包括支架1和三个LED芯片2(优选为蓝光芯片)，支架1上开设有一个凹口101(俗称“碗杯”)，三个LED芯片2设置在凹口101中；所述凹口自底部向上依次设置有镀银层31、白胶层4、第一荧光胶层51、第二荧光胶层52和第三荧光胶层53；所述白胶层4的上表面为平面，白胶层4的上表面低于各个LED芯片2的上表面；所述第一荧光胶层51包含红光荧光粉，第二荧光胶层52包含黄光荧光粉，第三荧光胶层53；所述第三荧光胶层53的上表面与支架1的上表面平齐。The high-power white LED lamp beads include a bracket 1 and three LED chips 2 (preferably blue-light chips), a notch 101 (commonly known as a "cup") is opened on the bracket 1, and the three LED chips 2 are arranged in the notch. In 101; the notch is sequentially provided with a silver-plated layer 31, a white glue layer 4, a first fluorescent glue layer 51, a second fluorescent glue layer 52 and a third fluorescent glue layer 53 from the bottom up; the white glue layer 4 The upper surface of the white glue layer 4 is lower than the upper surface of each LED chip 2; the first fluorescent glue layer 51 contains red fluorescent powder, the second fluorescent adhesive layer 52 contains yellow fluorescent powder, and the first fluorescent adhesive layer 52 contains yellow fluorescent powder. Three fluorescent glue layers 53 ; the upper surface of the third fluorescent glue layer 53 is flush with the upper surface of the bracket 1 .
实际生产时，可以将白胶以喷涂或其他方式设置在镀银层上，固化后形成白胶层。所述荧光胶层中均匀地掺入有荧光粉，但此处不限定荧光粉的具体参数，因为此处不限定灯珠实际发出何种颜色的光。此外，此处不限定各个LED芯片为正装或者倒装，由于LED芯片的固晶和焊接等工序本身属于常规技术且不在本发明的保护范围内，因此附图未具体画出固晶和焊接等常规结构(如金线、焊盘、热沉等)。In actual production, the white glue can be sprayed or set on the silver-plated layer by spraying or other methods, and a white glue layer can be formed after curing. The fluorescent glue layer is uniformly mixed with fluorescent powder, but the specific parameters of the fluorescent powder are not limited here, because it is not limited here to what color light the lamp beads actually emit. In addition, each LED chip is not limited to be installed or flipped here. Since the processes such as die bonding and welding of LED chips themselves belong to conventional technologies and are not within the scope of protection of the present invention, the attached drawings do not specifically depict die bonding and welding, etc. Conventional structures (eg gold wires, pads, heat sinks, etc.).
当所述灯珠点亮后，三个LED芯片2发出的部分光线会到达凹口的底部，而白胶层4对这部分光线起到反射作用(反射出碗杯，或者反射到凹口侧壁再射出)。由于白胶层的反光性能较好，本发明所述的灯珠比普通的三芯片的灯珠的发光效率更高。本发明中所设置的镀银层主要用于防止支架对应凹口底部的那部分发生氧化，由于镀银层则不用于反光，因此，对于镀银层的表面质量要求则相对降低，降低了镀银工艺的要求，增加便于加工。LED芯片点亮后，由于自下而上依次设置红光荧光粉、黄光荧光粉和绿光荧光粉，被激发出的红光不会进一步地激发黄光荧光粉和绿光荧光粉，被激发出的黄光也不会进一步地激发绿光荧光粉，降低了能量损失，因此整体发光效率得到提高。When the lamp bead is lit, part of the light emitted by the three LED chips 2 will reach the bottom of the notch, and the white glue layer 4 will reflect this part of the light (reflected out of the bowl, or reflected to the side of the notch wall re-ejection). Due to the better reflective performance of the white glue layer, the lamp beads of the present invention have higher luminous efficiency than ordinary three-chip lamp beads. The silver-plated layer provided in the present invention is mainly used to prevent the part of the bracket corresponding to the bottom of the notch from being oxidized. Since the silver-plated layer is not used for reflecting light, the surface quality requirements for the silver-plated layer are relatively reduced, reducing the need for plating. The requirements of silver craftsmanship are increased for ease of processing. After the LED chip is turned on, since the red phosphor, the yellow phosphor and the green phosphor are arranged in sequence from the bottom to the top, the excited red light will not further excite the yellow phosphor and the green phosphor. The excited yellow light will not further excite the green phosphor, which reduces the energy loss, so the overall luminous efficiency is improved.
优选地，三个LED芯片2规格相同，三个LED芯片2的高度位置相同。该设置便于实际射出的光线更加均。Preferably, the specifications of the three LED chips 2 are the same, and the height positions of the three LED chips 2 are the same. This setting facilitates the actual emitted light to be more uniform.
如图2所示，优选地，三个LED芯片2以等边三角形的方式排列，即：三个LED芯片的中心连线构成等边三角形，进一步提高射出的光线的均匀性。As shown in FIG. 2 , preferably, the three LED chips 2 are arranged in an equilateral triangle, that is, the center line of the three LED chips forms an equilateral triangle, which further improves the uniformity of the emitted light.
优选地，设置在凹口101底部的镀银层31的厚度为10～20微英寸，相比现有技术中通过增加镀银层的厚度来提高反光效果，本发明中通过白胶层来反光因此可以降低镀银层的厚度，降低镀银工序的要求。Preferably, the thickness of the silver-plated layer 31 disposed at the bottom of the notch 101 is 10-20 microinches. Compared with the prior art, the thickness of the silver-plated layer is increased to improve the reflective effect. In the present invention, the white glue layer is used to reflect the light. Therefore, the thickness of the silver plating layer can be reduced, and the requirements of the silver plating process can be reduced.
进一步地，所述荧光胶层5上方设置有透明的硅胶层6，该硅胶层将整个支架上表面覆盖。通过设置硅胶层起到防护、防水作用，保证LED芯片和白胶层不受损害。Further, a transparent silica gel layer 6 is provided above the fluorescent glue layer 5 , and the silica gel layer covers the entire upper surface of the bracket. By setting the silicone layer to play the role of protection and waterproofing, to ensure that the LED chip and the white glue layer are not damaged.
优选地，如图2所示，所述凹口101的水平截面呈圆形，如图1所示，凹口上宽下窄，但此处不限定凹口的侧壁的倾斜角度。Preferably, as shown in FIG. 2 , the horizontal section of the notch 101 is circular. As shown in FIG. 1 , the notch is wide at the top and narrow at the bottom, but the inclination angle of the side wall of the notch is not limited here.
进一步地，所述凹口101的侧壁设置有第二镀银层32，该第二镀银层为镜面亮银。此处的“第二”仅用于名称上的区别。由于镜面亮银反光效果较好，进一步提高了灯珠的发光效率。Further, the side wall of the recess 101 is provided with a second silver-plated layer 32, and the second silver-plated layer is mirror bright silver. "Second" is used here only for a name distinction. Because the mirror surface bright silver has better reflective effect, the luminous efficiency of the lamp bead is further improved.
优选地，所述凹口101的侧壁是磨砂面，该设置便于提高第二镀银层和凹口侧壁的连接牢固性，使用过程中第二镀银层不易发生脱落。Preferably, the side wall of the notch 101 is a frosted surface, which is convenient to improve the connection firmness of the second silver-plated layer and the side wall of the notch, and the second silver-plated layer is not easy to fall off during use.
优选地，凹口101的侧壁的粗糙度Ra为50～80微米。Preferably, the roughness Ra of the sidewall of the notch 101 is 50-80 microns.
通过上述分析可知，本发明提供的大功率白光LED灯珠中，通过在支架的凹口底部设置镀银层，而在镀银层上设置白胶层用来反光，提高了凹口底部的反光效果，使得本发明所述的灯珠比普通的三芯片的灯珠的发光效率更高。且使用一段时间后，即使凹口底部的镀银层发生氧化并不影响白胶层的反光效果，灯珠的整体发光效果未受影响；此外，光线经过第一荧光胶层、第二荧光胶层和第三荧光胶层的能量损失得到降低。简言之，本发明提供的大功率白光LED灯珠发光效率得到提高，且不会像现有的LED灯珠那样使用一段时间后亮度逐渐变暗。It can be seen from the above analysis that in the high-power white LED lamp beads provided by the present invention, a silver-plated layer is arranged at the bottom of the notch of the bracket, and a white glue layer is arranged on the silver-plated layer to reflect light, which improves the reflection at the bottom of the notch. As a result, the luminous efficiency of the lamp bead of the present invention is higher than that of the ordinary three-chip lamp bead. And after a period of use, even if the silver-plated layer at the bottom of the notch is oxidized, the reflective effect of the white glue layer will not be affected, and the overall lighting effect of the lamp bead will not be affected; in addition, the light passes through the first fluorescent glue layer and the second fluorescent glue. The energy loss of the layer and the third phosphor layer is reduced. In short, the luminous efficiency of the high-power white LED lamp beads provided by the present invention is improved, and the brightness will not gradually dim after a period of use like the existing LED lamp beads.
可以理解的是，对本领域普通技术人员来说，可以根据本发明的技术方案及其发明构思加以等同替换或改变，而所有这些改变或替换都应属于本发明的保护范围。It can be understood that, for those of ordinary skill in the art, equivalent replacements or changes can be made according to the technical solutions and inventive concepts of the present invention, and all these changes or replacements should belong to the protection scope of the present invention.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910190752.1A CN110034223A (en) | 2019-03-13 | 2019-03-13 | A kind of large power white light LED lamp bead |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910190752.1A CN110034223A (en) | 2019-03-13 | 2019-03-13 | A kind of large power white light LED lamp bead |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110034223A true CN110034223A (en) | 2019-07-19 |
Family
ID=67235950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910190752.1A Pending CN110034223A (en) | 2019-03-13 | 2019-03-13 | A kind of large power white light LED lamp bead |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110034223A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118073505A (en) * | 2024-02-29 | 2024-05-24 | 中山市光圣半导体科技有限公司 | A highly uniform white light COB light source and its processing method |
Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369614A (en) * | 2007-08-17 | 2009-02-18 | 刘胜 | Packaging structure and method for high power white light LED |
| CN101378105A (en) * | 2007-08-31 | 2009-03-04 | 株式会社东芝 | Light-emitting device |
| JP2009200403A (en) * | 2008-02-25 | 2009-09-03 | Toyoda Gosei Co Ltd | Light-emitting apparatus |
| CN201887075U (en) * | 2010-09-25 | 2011-06-29 | 弘凯光电(深圳)有限公司 | Led |
| CN102216421A (en) * | 2008-08-12 | 2011-10-12 | 三星Led株式会社 | Method for preparing β-SiAlON phosphor |
| CN102220129A (en) * | 2010-03-26 | 2011-10-19 | 三星Led株式会社 | Complex crystal phosphor, light emitting device, surface light source apparatus, display apparatus, and lighting device |
| CN102252219A (en) * | 2010-05-28 | 2011-11-23 | 深圳市聚飞光电股份有限公司 | Light-emitting diode (LED) street lamp and high-power LED device |
| CN202905774U (en) * | 2012-10-13 | 2013-04-24 | 江苏新广联科技股份有限公司 | Substrate for light source module |
| CN202957289U (en) * | 2012-10-13 | 2013-05-29 | 江苏新广联科技股份有限公司 | Light source module |
| CN104009146A (en) * | 2014-06-09 | 2014-08-27 | 深圳雷曼光电科技股份有限公司 | SMD LED panel support structure and LED chip |
| CN104053818A (en) * | 2012-01-16 | 2014-09-17 | 日立化成株式会社 | Silver surface treatment agent and light emitting device |
| CN106898601A (en) * | 2017-02-15 | 2017-06-27 | 佛山市国星光电股份有限公司 | LED circuit board, triangle LED component and display screen that triangle is combined |
| CN107507826A (en) * | 2017-08-15 | 2017-12-22 | 广东聚科照明股份有限公司 | A kind of LED encapsulation structure with the reflective bottom of sulfuration resistant |
| CN206849859U (en) * | 2017-04-07 | 2018-01-05 | 深圳市瑞丰光电子股份有限公司 | A kind of LED encapsulation structure |
| CN206864496U (en) * | 2017-06-20 | 2018-01-09 | 佛山市蓝箭电子股份有限公司 | A kind of LED support |
| CN107768504A (en) * | 2017-11-10 | 2018-03-06 | 深圳市灏天光电有限公司 | A kind of paster LED bracket |
| CN207394731U (en) * | 2017-11-17 | 2018-05-22 | 珠海金印实业发展有限公司 | Red white assembled lamp |
| CN108257948A (en) * | 2017-12-29 | 2018-07-06 | 广东晶科电子股份有限公司 | White light emitting diode and backlight module |
| CN208460790U (en) * | 2018-06-29 | 2019-02-01 | 佛山市国星光电股份有限公司 | A kind of LED component and LED light |
-
2019
- 2019-03-13 CN CN201910190752.1A patent/CN110034223A/en active Pending
Patent Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369614A (en) * | 2007-08-17 | 2009-02-18 | 刘胜 | Packaging structure and method for high power white light LED |
| CN101378105A (en) * | 2007-08-31 | 2009-03-04 | 株式会社东芝 | Light-emitting device |
| JP2009200403A (en) * | 2008-02-25 | 2009-09-03 | Toyoda Gosei Co Ltd | Light-emitting apparatus |
| CN102216421A (en) * | 2008-08-12 | 2011-10-12 | 三星Led株式会社 | Method for preparing β-SiAlON phosphor |
| CN102220129A (en) * | 2010-03-26 | 2011-10-19 | 三星Led株式会社 | Complex crystal phosphor, light emitting device, surface light source apparatus, display apparatus, and lighting device |
| CN102252219A (en) * | 2010-05-28 | 2011-11-23 | 深圳市聚飞光电股份有限公司 | Light-emitting diode (LED) street lamp and high-power LED device |
| CN201887075U (en) * | 2010-09-25 | 2011-06-29 | 弘凯光电(深圳)有限公司 | Led |
| CN104053818A (en) * | 2012-01-16 | 2014-09-17 | 日立化成株式会社 | Silver surface treatment agent and light emitting device |
| CN202957289U (en) * | 2012-10-13 | 2013-05-29 | 江苏新广联科技股份有限公司 | Light source module |
| CN202905774U (en) * | 2012-10-13 | 2013-04-24 | 江苏新广联科技股份有限公司 | Substrate for light source module |
| CN104009146A (en) * | 2014-06-09 | 2014-08-27 | 深圳雷曼光电科技股份有限公司 | SMD LED panel support structure and LED chip |
| CN106898601A (en) * | 2017-02-15 | 2017-06-27 | 佛山市国星光电股份有限公司 | LED circuit board, triangle LED component and display screen that triangle is combined |
| CN206849859U (en) * | 2017-04-07 | 2018-01-05 | 深圳市瑞丰光电子股份有限公司 | A kind of LED encapsulation structure |
| CN206864496U (en) * | 2017-06-20 | 2018-01-09 | 佛山市蓝箭电子股份有限公司 | A kind of LED support |
| CN107507826A (en) * | 2017-08-15 | 2017-12-22 | 广东聚科照明股份有限公司 | A kind of LED encapsulation structure with the reflective bottom of sulfuration resistant |
| CN107768504A (en) * | 2017-11-10 | 2018-03-06 | 深圳市灏天光电有限公司 | A kind of paster LED bracket |
| CN207394731U (en) * | 2017-11-17 | 2018-05-22 | 珠海金印实业发展有限公司 | Red white assembled lamp |
| CN108257948A (en) * | 2017-12-29 | 2018-07-06 | 广东晶科电子股份有限公司 | White light emitting diode and backlight module |
| CN208460790U (en) * | 2018-06-29 | 2019-02-01 | 佛山市国星光电股份有限公司 | A kind of LED component and LED light |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118073505A (en) * | 2024-02-29 | 2024-05-24 | 中山市光圣半导体科技有限公司 | A highly uniform white light COB light source and its processing method |
| CN118073505B (en) * | 2024-02-29 | 2025-07-01 | 中山市光圣半导体科技有限公司 | High-uniformity white light COB light source and processing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5899507B2 (en) | LIGHT EMITTING DEVICE AND LIGHTING DEVICE USING THE SAME | |
| CN102544252B (en) | One utilizes the design of substrate high diffuse reflective optical to carry out efficient LED chip packaging method | |
| CN103219449B (en) | LED packaging structure and LED packaging method | |
| TWI469383B (en) | A light emitting device and a manufacturing method thereof | |
| CN108281537A (en) | Packaging structure of L ED lamp pearl | |
| WO2019056584A1 (en) | Wavelength conversion device and preparation method therefor, and laser-fluorescence conversion type light source | |
| TWI463705B (en) | Light emitting device | |
| CN110034223A (en) | A kind of large power white light LED lamp bead | |
| CN201508856U (en) | A high-power white LED | |
| CN106449950A (en) | Manufacturing method of MLCOB light source | |
| CN103199184B (en) | A kind of encapsulating structure improving vertical LED chip brightness | |
| CN215933637U (en) | LED lamp | |
| CN109869647B (en) | LED lamp pearl of two-sided luminous | |
| CN211957639U (en) | LED lamp bead | |
| CN211700330U (en) | White light LED chip with all directions of same spectrum and synchronous light attenuation | |
| CN109427950A (en) | White chip and preparation method thereof | |
| CN108662452A (en) | L ED lamp | |
| CN201754416U (en) | LED light-emitting carrier structure with improved reflection efficiency | |
| CN107887494A (en) | A kind of LED package and its method for packing | |
| CN210723086U (en) | LED lamp bead | |
| CN207558826U (en) | A kind of LED package of adjustable focus | |
| CN109945103A (en) | An LED light source assembly and a backlight assembly | |
| CN222692243U (en) | LED packaging device | |
| TWM608203U (en) | Light emitting diode package structure | |
| CN213150805U (en) | LED light source package structure and LED light source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190719 |
|
| RJ01 | Rejection of invention patent application after publication |