CN110055498B - Surface vapor deposition source and its production method, vapor deposition method, and vapor deposition device - Google Patents

Abstract

The invention discloses a surface evaporation source, a preparation method, an evaporation method and an evaporation device, and relates to the technical field of display. The opening of the stencil forms a thin film on the device substrate, which includes a substrate, and a partition wall structure is arranged on the substrate, and the partition wall structure forms a plurality of first grooves separated from each other on the substrate; The first groove is used to carry the material to be evaporated; during evaporation, the projection of the opening of the evaporation mask on the substrate at least covers the projection of the first groove on the substrate. The surface evaporation source can reduce the shadow area outside the opening area of the evaporation mask, effectively improve the precision of evaporation, and reduce the problem of color mixing between different pixels, thereby reducing the pixel size and supporting higher-resolution OLEDs Display products.

Description

Surface vapor deposition source and method for producing the same, vapor deposition method, and vapor deposition device

technical field

The present invention relates to the field of display, and in particular, to a surface vapor deposition source and its manufacturing method, vapor deposition method and vapor deposition device.

Background technique

OLED (Organic Light Emitting Diode, organic electroluminescent diode) display panels have the advantages of self-luminescence, fast response speed, lightness and thinness, and flexible devices can be prepared.

The evaporation process is a key process in the preparation of OLED display panels. In high-precision pixel evaporation, an evaporation mask is used as a shield, and the evaporation material is evaporated from the opening of the evaporation mask to the corresponding pixel position. However, at present, due to the use of point sources and line sources, there will be relative motion between the evaporation source and the backplane, resulting in a shadow area of evaporation behind the mask. If the shadow area is too large, it will lead to pixel color mixing and color mixing. For this reason, reducing the shadow area can effectively improve the accuracy of evaporation, thereby reducing the pixel size and supporting higher-resolution OLED products.

At the same time, in terms of the evaporation device, due to the relatively large distance between the evaporation source and the device substrate, the chamber of the evaporation device is very large, the processing is difficult, the equipment is expensive, the vacuuming time is long, and the evaporation process time is long. .

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide a surface vapor deposition source and its manufacturing method, vapor deposition method, and vapor deposition device, which can reduce the shadow area of vapor deposition, reduce the volume of the vapor deposition device, and improve production efficiency.

In order to achieve the above object, the present invention provides the following technical solutions:

A surface evaporation source is used for evaporating materials to be evaporated so that a thin film can be formed on a device substrate through an opening of an evaporation mask, and is characterized in that it includes:

substrate;

a separation wall structure, the separation wall structure is arranged on the substrate;

Wherein, the isolation wall structure forms a plurality of mutually separated first grooves on the substrate;

the first groove is used to carry the material to be evaporated;

The first groove is configured such that, during evaporation, the projection of the opening of the evaporation mask on the substrate at least covers a projection of the first groove on the substrate.

Preferably, the projections of the openings of the evaporation mask on the substrate cover the projections of the N first grooves on the substrate, where N is a positive integer.

Further, the projection of at least part of the first groove on the substrate completely coincides with the projection of the opening of the evaporation mask on the substrate.

Preferably, the height of the partition wall structure and the characteristic size of the bottom surface of the first groove are in the order of millimeters or micrometers.

Further, the height of the isolation wall structure is greater than or equal to 10 microns.

Preferably, the surface evaporation source includes an evaporation area and a film thickness test area;

The evaporation area is used for evaporating the material to be evaporated to the device substrate;

The film thickness test area is used to form a thin film for detecting the thickness of the thin film.

Preferably, the substrate is transparent.

Further, the bottom of the first groove is also provided with a metal layer;

The maximum distance from the upper surface of the metal layer to the lower surface of the metal layer is less than or equal to 1 micron;

Wherein, the upper surface of the metal layer is the surface of the metal layer away from the bottom surface of the first groove;

The lower surface of the metal layer is the surface of the metal layer that is in contact with the bottom surface of the first groove.

Further, a surface microstructure is formed on the upper surface of the metal layer;

The metal layer and the surface microstructure have an integral structure.

Further, the surface microstructure is a grid structure;

the grid structure includes a plurality of second grooves formed on the upper surface of the metal layer;

The depth of the second groove is 0.5-0.6 μm, and the distance from the bottom surface of the second groove to the lower surface of the metal layer is 0.4-0.5 μm.

Preferably, the substrate and the isolation wall structure are integral structures.

The present invention also provides a method for making a surface evaporation source, which is used for evaporating the material to be evaporated, so that a thin film can be formed on the device substrate through the opening of the evaporation mask, and its characteristics are: is, including:

provide a substrate;

forming a separation wall structure on the substrate;

Wherein, the isolation wall structure forms a plurality of mutually separated first grooves on the substrate;

the first groove is used to carry the material to be evaporated;

The first groove is configured such that, during evaporation, the projection of the opening of the evaporation mask on the substrate at least covers a projection of the first groove on the substrate.

Further, the method for making the surface evaporation source also includes:

A metal layer is formed at the bottom of the first groove.

Further, the method for making the surface evaporation source also includes:

etching the upper surface of the metal layer to form a surface microstructure;

Wherein, the upper surface of the metal layer is the surface of the metal layer that is away from the bottom surface of the first groove.

Further, the method for etching the upper surface of the metal layer is dry etching.

Preferably, the method for forming the isolation wall structure on the substrate is to etch the substrate to form the isolation wall structure;

Alternatively, the method for forming the isolation wall structure on the substrate is to deposit the isolation wall structure material on the substrate, and etch the isolation wall structure material to form the isolation wall structure.

The present invention also provides an evaporation method, comprising:

Use surface evaporation source evaporation;

Wherein, the surface evaporation source includes a substrate; a separation wall structure, the separation wall structure is arranged on the substrate; the separation wall structure forms a plurality of mutually separated first grooves on the substrate ; the first groove is used to carry the material to be evaporated; the first groove is configured such that during evaporation, the projection of the opening of the evaporation mask on the substrate at least covers one of the the projection of the first groove on the substrate.

Preferably, the evaporation method further includes:

A device substrate is arranged on the opening side of the first groove of the surface evaporation source;

An evaporation mask is arranged between the surface evaporation source and the device substrate;

aligning the surface evaporation source with the evaporation mask and the device substrate;

Wherein, the distance between the surface evaporation source and the evaporation mask is set to the order of millimeters or microns;

The projections of the openings of the evaporation mask on the substrate cover the projections of the N first grooves on the substrate, where N is an integer.

Further, the projection of at least part of the first groove on the substrate completely coincides with the projection of the opening of the evaporation mask on the substrate.

Preferably, the evaporation method further includes:

Filling the material to be evaporated into the first groove of the surface evaporation source;

After the material to be evaporated is filled into the first groove of the surface evaporation source, the material to be evaporated above the isolation wall structure of the surface evaporation source is removed.

Further, the method of filling the first groove of the surface evaporation source with the material to be evaporated is to use a point or line evaporation source to evaporate the material to be evaporated, so that the material to be evaporated is attached to the surface evaporation. on the plating source.

Further, the evaporation method also includes:

The opening of the first groove of the surface vapor deposition source is set downward for vapor deposition.

Further, the method for removing the material to be evaporated above the isolation wall structure of the surface evaporation source is to use laser oblique irradiation to remove the material to be evaporated above the isolation wall structure;

Alternatively, the method for removing the to-be-evaporated material above the partition wall structure of the surface evaporation source is to attach a film material with strong adhesion to the upper surface of the surface evaporation source, and remove the to-be-evaporated material above the partition wall structure. material sticking;

Alternatively, the method for removing the material to be evaporated above the isolation wall structure of the surface evaporation source is to use a vacuum adsorption method to remove the material to be evaporated above the isolation wall structure, by controlling the gap between the vacuum part and the surface evaporation source. , to ensure that the material in the first groove is not adsorbed away.

Preferably, the evaporation method further includes:

heating the surface evaporation source for evaporation;

Wherein, the method of heating the surface vapor deposition source is to use a surface heat source for heating.

Preferably, heating the surface evaporation source for evaporation;

Wherein, the method of heating the surface evaporation source is to heat the surface evaporation source by means of laser heating;

The laser heating method is to use a laser to irradiate a selected area of the surface vapor deposition source, and heat the selected area to perform vapor deposition.

The present invention also provides an evaporation device, comprising:

Any of the above-mentioned surface vapor deposition sources.

Description of drawings

The accompanying drawings described herein are used to provide further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the attached image:

1 is a schematic structural diagram 1 of a surface evaporation source provided by an embodiment of the present invention;

FIG. 2 is a corresponding relationship diagram 1 of a surface evaporation source and an evaporation mask, a device substrate and a film thickness gauge provided by an embodiment of the present invention;

3 is a second structural schematic diagram of a surface evaporation source provided by an embodiment of the present invention;

4 is a third structural schematic diagram of a surface evaporation source provided by an embodiment of the present invention;

FIG. 5 is a fourth schematic structural diagram of a surface evaporation source provided by an embodiment of the present invention;

6 is a schematic diagram of filling the material to be evaporated into the surface evaporation source by using a point or line evaporation source for evaporation according to an embodiment of the present invention;

7 is a schematic diagram of an evaporation method in which the opening of the first groove of the surface evaporation source is downward according to an embodiment of the present invention;

FIG. 8 is a schematic diagram of removing the material to be evaporated above the isolation wall structure by oblique laser irradiation according to an embodiment of the present invention.

Reference number:

11-Separation wall structure, 12-First groove,

2- Evaporation mask, 3- Device substrate,

4-Film thickness gauge, 5-Metal layer,

6- Material to be evaporated, 7- Laser.

Detailed ways

In order to further illustrate the surface vapor deposition source and its manufacturing method, vapor deposition method, and vapor deposition device provided by the embodiments of the present invention, the following detailed description is given in conjunction with the accompanying drawings.

An embodiment of the present invention provides a surface evaporation source for evaporating materials to be evaporated so that a thin film can be formed on a device substrate through an opening of an evaporation mask, as shown in FIG. 1 , including: a substrate , a partition wall structure 11 is arranged on the substrate, and a plurality of mutually separated first grooves 12 are formed on the substrate by the partition wall structure. During evaporation, the surface evaporation source is heated, and the material to be evaporated in the first groove forms a thin film on the device substrate 3 through the opening of the evaporation mask 2 . The projection of the opening of the evaporation mask 2 on the substrate at least covers the projection of the first groove 12 on the substrate. Unlike point sources and line sources, surface vapor deposition sources do not need to form relative motion with the device substrate during vapor deposition, which can reduce the shadow area outside the opening area of the vapor deposition mask. Further, since the projection of the opening of the evaporation mask 2 on the substrate covers at least one first groove 12, the isolation wall structure 11 can limit the vapor formed during evaporation within the range of the opening of the evaporation mask. The diffusion of the flow can reduce the shadow area outside the opening area of the evaporation mask, effectively improve the accuracy of evaporation, and reduce the problem of color mixing between different pixels, so that a smaller pixel size can be designed to support higher resolution OLED display products. At the same time, the surface evaporation source of the present invention can be closer to the evaporation mask and the device substrate, reducing the distance between the surface evaporation source and the evaporation mask and the device substrate, and the cavity of the evaporation device can be greatly reduced. The height is reduced, the volume of the chamber of the evaporation device is reduced, the time required for vacuuming is reduced, and the duration of the evaporation process is reduced. The smaller volume of the vapor deposition apparatus chamber can also reduce the amount of material deposited outside the confines of the device substrate, reducing material consumption.

It should be noted that "on the substrate" here may refer to the upper part of the substrate, or may refer to the upper part of the substrate.

Further, the projections of the openings of the evaporation mask on the substrate cover the projections of the N first grooves on the substrate, where N is a positive integer. At the position facing the edge of the opening range of the evaporation mask, there is a separation wall, which can limit the diffusion of the vapor flow at the edge and reduce the shadow area. At the same time, there are also several isolation wall structures within the opening range of the evaporation mask, which can further restrict the steam flow in a fixed direction and better achieve the purpose of reducing the shadow area.

Further, as shown in FIG. 2 , the projection of at least part of the first groove on the substrate and the projection of the opening of the evaporation mask on the substrate may be completely coincident. That is, during evaporation, the first grooves of the surface evaporation source may correspond one-to-one with the openings of the evaporation mask, and the area where the isolation wall structure is located corresponds to the shielding area of the evaporation mask; or there may be part of the first recesses. The grooves correspond to the shielding areas of the evaporation mask, and the other first grooves correspond one-to-one with the openings of the evaporation mask.

In FIG. 1 , the height h of the isolation wall structure 11 and the characteristic dimension w of the bottom surface of the first groove 12 are in the order of millimeters or micrometers. The size of the sub-pixels of the OLED display panel is generally ten to several tens of micrometers, that is, the opening of the evaporation mask 2 is also in the order of millimeters or micrometers. The opening of the first groove is small, and the isolation wall structure has a certain height compared with the characteristic size of the smaller opening of the first groove, which can finely control the diffusion of the vapor flow formed during evaporation. The shadow area outside the opening area of the evaporation mask can be reduced, and the precision of evaporation can be effectively improved.

Further, the height h of the isolation wall structure 11 is greater than or equal to 10 microns, which ensures that the isolation wall structure has a certain height compared with the characteristic size of the bottom surface of the first groove, which can effectively limit the diffusion of steam flow.

It should be noted that the characteristic size of the bottom surface described in the present invention refers to the maximum value of the distance between any two points on the bottom surface. The millimeter or micrometer scale mentioned in the present invention refers to any value in the size range of 10 millimeters or less and greater than or equal to 0.1 micrometers.

Preferably, as shown in FIG. 3 , the surface evaporation source includes an evaporation area A and a film thickness test area B. During vapor deposition, the vapor deposition area A is disposed corresponding to the device substrate 3 for vapor deposition of the material to be vapor deposited onto the device substrate 3 . The film thickness test area B is correspondingly provided with a film thickness gauge 4, which is used to form a thin film for detecting the thickness of the thin film on the probe of the film thickness gauge, so as to detect the thickness of the thin film.

Preferably, the substrate is transparent. When a laser is used to heat the substrate, the laser can pass through the substrate to heat the portion to be heated. Specifically, the substrate can be a glass substrate with high transmittance. During the laser transmission process, the absorption is small, the loss of laser energy is small, and more laser energy can be used for heating.

Further, as shown in FIG. 4 , the bottom of the first groove is further provided with a metal layer 5 . When the surface evaporation source is heated by the laser heating method, the laser passes through the transparent substrate and is absorbed by the metal layer to generate heat to heat the surface evaporation source.

Further, the maximum distance from the upper surface of the metal layer to the lower surface of the metal layer is less than or equal to 1 micron;

Wherein, the upper surface of the metal layer is the surface of the metal layer away from the bottom surface of the first groove;

The lower surface of the metal layer is the surface of the metal layer that is in contact with the bottom surface of the first groove.

Further, as shown in FIG. 5 , the upper surface of the metal layer may also have a surface microstructure, the surface microstructure is directly formed by etching the surface of the metal layer, and the metal layer and the surface microstructure are integrated into a structure. The purpose of making the surface microstructure is to increase the contact area between the surface evaporation source and the material to be evaporated, so that the heat can be conducted quickly. Specifically, the surface microstructure may be a grid structure, and the grid structure forms a plurality of second grooves. The size of the grid structure can be comprehensively considered according to the size of the first groove of the surface evaporation source and the amount of the material to be evaporated to be filled. For example, the depth of the second groove may be 0.5-0.6 μm, the distance from the bottom surface of the second groove to the lower surface of the metal layer is 0.4-0.5 μm, and the total thickness is within 1 μm. Since the thickness required by the general evaporation material is below 0.2um, such a microgrid can meet the thickness requirements of the evaporation material. The metal materials used include Ti, Al and other metals or their alloys and the like.

The embodiment of the present invention also provides a method for making a surface evaporation source, wherein the surface evaporation source is used for evaporating a material to be evaporated, so that a thin film can be formed on a device substrate through an opening of an evaporation mask, It is characterized in that it includes:

provide a substrate;

forming a separation wall structure on the substrate;

Wherein, the isolation wall structure forms a plurality of mutually separated first grooves on the substrate;

the first groove is used to carry the material to be evaporated;

The first groove is configured such that, during evaporation, the projection of the opening of the evaporation mask on the substrate at least covers a projection of the first groove on the substrate.

Preferably, the method for forming the isolation wall structure on the substrate is to etch the substrate to form the isolation wall structure;

Alternatively, the method for forming the isolation wall structure on the substrate is to deposit the isolation wall structure material on the substrate, and etch the isolation wall structure material to form the isolation wall structure.

The above two methods can be selected according to actual needs.

Further, the method for making the surface evaporation source also includes:

A metal layer is formed at the bottom of the first groove.

Further, the method for making the surface evaporation source also includes:

etching the upper surface of the metal layer to form a surface microstructure;

Wherein, the upper surface of the metal layer is the surface of the metal layer that is away from the bottom surface of the first groove. Correspondingly, the method of forming the first groove is different, and the method and process steps of forming the metal layer can be different, for example:

The method of forming the metal layer may be: firstly forming the first groove, then depositing the metal layer, patterning to remove the unnecessary metal layer part, and etching the upper surface of the metal layer at the bottom of the first groove to form the surface microstructure.

The method of forming the metal layer can also be: depositing the metal layer on the substrate, patterning to remove unnecessary parts of the metal layer, and etching the upper surface of the metal layer to form a surface microstructure. The wall structure material is then deposited. The isolation wall structure material is etched to form an isolation wall structure, and the isolation wall structure forms a plurality of mutually separated first grooves on the substrate. After etching, the bottom of the first groove formed is a metal layer with surface microstructures.

Wherein, the method for etching the upper surface of the metal layer is dry etching. Compared with wet etching, dry etching can more easily achieve the formation of surface microstructures on the surface of the metal layer without etching through the metal layer.

Embodiments of the present invention also provide an evaporation method, comprising:

S1: Fill the material to be evaporated into the first groove of the above-mentioned surface evaporation source;

S2: disposing a device substrate on the opening side of the first groove of the surface evaporation source;

S3: an evaporation mask is arranged between the surface evaporation source and the device substrate;

S4: aligning the surface evaporation source with the evaporation mask and the device substrate;

S5: Vapor deposition is performed by heating the surface vapor deposition source, and the vapor deposition is performed in a high vacuum environment.

Wherein, the surface evaporation source includes a substrate; a separation wall structure, the separation wall structure is arranged on the substrate; the separation wall structure forms a plurality of mutually separated first grooves on the substrate ; the first groove is used to carry the material to be evaporated; the first groove is configured such that during evaporation, the projection of the opening of the evaporation mask on the substrate at least covers one of the the projection of the first groove on the substrate.

The projections of the openings of the evaporation mask on the substrate may cover the projections of the N first grooves on the substrate, where N is an integer.

Further, the projection of at least part of the first groove on the substrate completely coincides with the projection of the opening of the evaporation mask on the substrate.

Preferably, as shown in FIG. 1 , the distance d between the surface evaporation source and the evaporation mask is set to the order of millimeters or micrometers. The distance d between the surface evaporation source and the evaporation mask is the distance between the upper surface of the partition wall structure of the surface evaporation source and the lower surface of the evaporation mask. In vapor deposition, although the diffusion of vapor flow is limited by the isolation wall structure of the surface vapor deposition source and kept within a certain range, if the distance between the surface vapor deposition source and the vapor deposition mask is too far, the vapor The effect of restricting the flow is significantly reduced. The distance between the surface evaporation source and the evaporation mask is set to the order of millimeters or microns to ensure that the surface evaporation source can better limit the steam flow and reduce the opening area of the evaporation mask. The external shadow area can effectively improve the accuracy of evaporation and reduce the problem of color mixing between different pixels, so that a smaller pixel size can be designed to support higher-resolution OLED display products. At the same time, the surface evaporation source of the present invention is closer to the evaporation mask and the device substrate, the height of the cavity of the evaporation device can be greatly reduced, the volume of the cavity of the evaporation device can be reduced, and the time required for vacuuming can be reduced. Reduce the evaporation process time. The smaller volume of the vapor deposition apparatus chamber can also reduce the amount of material deposited outside the confines of the device substrate, reducing material consumption.

Wherein, the surface evaporation source may include an evaporation area and a film thickness test area. The device substrate is correspondingly arranged in the evaporation area, and the material to be evaporated is evaporated onto the device substrate through the opening of the evaporation mask; the film thickness test area is correspondingly arranged with a film thickness meter to monitor the thickness of the evaporated film.

Further, as shown in FIG. 6 , the method of filling the material to be evaporated into the first groove facing the evaporation source is to use a point or line evaporation source to evaporate the material to be evaporated, so that the material to be evaporated 6 is attached to the evaporation source. on the surface evaporation source. The thickness of the material to be evaporated attached to the surface evaporation source can be adjusted according to actual needs. At the same time, during the evaporation process, the evaporation speed is kept the same, and the moving speed of the point or line evaporation source is uniform. This method of filling the material to be evaporated into the surface evaporation source ensures that the material to be evaporated in each first groove is The uniformity of the thickness is beneficial to obtain a uniform and dense film when using a surface vapor deposition source for vapor deposition. In addition, the deposition of the material to be evaporated on the surface evaporation source is equivalent to a sublimation purification of the material, which helps to improve the material purity of the thin film evaporated by using the surface evaporation source, thereby improving the quality of the device prepared by evaporation. performance. The point or line vapor deposition source used in the prior art needs to keep a certain distance between the vapor deposition source and the device substrate for the uniformity of the vapor deposition film. In the evaporation source described in this embodiment, since the thickness of the material to be evaporated in each of the first grooves is uniform, it is ensured that the evaporation speed of each groove of the surface evaporation source is uniform. While ensuring uniformity, the surface evaporation source can be placed very close to the evaporation mask and the device substrate, and the distance can be on the order of millimeters or micrometers. Since the opening of the evaporation mask for OLED display is also in the order of millimeters or microns, the isolation wall structure can precisely control the diffusion of the vapor flow formed during evaporation, which can reduce the shadow area outside the opening area of the evaporation mask. Effectively improve the accuracy of evaporation, reduce the problem of color mixing between different pixels, and then reduce the pixel size to support higher-resolution OLED display products. Moreover, since the surface evaporation source can be set closer to the evaporation mask and the device substrate, the distance can be in the order of millimeters or microns, the height of the cavity of the evaporation device can be greatly reduced, and the volume of the cavity of the evaporation device can be reduced. , thereby reducing the time required for vacuuming and reducing the duration of the evaporation process. The smaller volume of the vapor deposition apparatus chamber can also reduce the amount of material deposited outside the confines of the device substrate, reducing material consumption.

When the material to be evaporated is filled into the first groove of the surface evaporation source in the above manner, after removing the material to be evaporated above the isolation wall structure of the surface evaporation source, as shown in FIG. 7 , the surface The opening of the first groove of the evaporation source is set downward, and evaporation is performed. The material to be evaporated 6 is attached to the surface evaporation source in the form of a thin film, so the material to be evaporated 6 will not fall off during the entire setting and evaporation process thereafter. The evaporation mask 2 and the device substrate 3 are sequentially arranged below the surface evaporation source. During vapor deposition, the generated vapor flows downward through the openings of the vapor deposition mask 2 and is vapor deposited onto the device substrate. The downward steam flow, combined with the restriction of the steam flow direction by the partition wall structure of the surface evaporation source, can further reduce the opening of the evaporation mask compared to the case where the opening of the groove of the surface evaporation source is set upward. The shadow area outside the area can effectively improve the accuracy of evaporation.

It should be noted that the "downward" in "the opening of the first groove is downward" here refers to downward in the direction of gravity.

Moreover, in the above embodiment, the method of removing the material to be evaporated above the isolation wall structure of the surface evaporation source can be selected according to actual needs, including but not limited to the following three:

The first method of removing the material to be evaporated above the partition wall structure of the surface vapor deposition source, as shown in FIG. 8 , may be to use the laser 7 to irradiate obliquely to remove the material to be evaporated above the partition wall structure of the surface evaporation source. The entire surface of the evaporation source is scanned by a laser inclined at a certain angle. The laser can only be irradiated on the top of the isolation wall structure and cannot be irradiated to the bottom of the first groove. Therefore, the material to be evaporated above the isolation wall structure is removed, and the first groove material is preserved. The specific scanning laser angle can be selected according to the specific size of the first groove of the surface evaporation source, for example, the angle between the scanning laser and the normal direction of the surface evaporation source plane is 70-80 degrees.

The second method of removing the material to be evaporated above the isolation wall structure of the surface evaporation source can be to attach a film material with strong adhesion to the upper surface of the surface evaporation source, and place the surface evaporation source above the isolation wall structure. The material to be evaporated is removed.

The third method of removing the material to be evaporated above the isolation wall structure of the surface evaporation source may be to use a vacuum adsorption method to remove the material to be evaporated above the isolation wall structure of the surface evaporation source, and by controlling the vacuum part and surface evaporation The gap between the plating source ensures that the material in the first groove is not adsorbed away.

The method for heating the surface vapor deposition source for vapor deposition, optionally, may be to use a surface heat source to heat the surface vapor deposition source.

The method of heating the surface vapor deposition source for vapor deposition may also be to heat the surface vapor deposition source by means of laser scanning. The speed and intensity of the laser scanning is determined, which ensures uniformity of evaporation.

Among them, the method of laser heating can be used to scan the selected area by laser for precise evaporation. Due to the very good directionality of the laser, the area irradiated by the laser can be precisely controlled. Therefore, by controlling the range of the irradiation area, part of the surface evaporation source can be heated, and part of the material to be evaporated in the first groove can be evaporated. In combination with the control of the vapor flow by the isolation wall structure of the above-mentioned surface vapor deposition source, a patterned thin film can be obtained by vapor deposition without matching with an vapor deposition mask. In addition, the heating rate can be controlled by controlling the intensity of the laser, scanning speed, etc., and films with different thicknesses can be obtained at different evaporation rates.

In the foregoing description of the embodiments, the particular features, structures, materials or characteristics may be combined in any suitable manner in any one or more of the embodiments or examples.

The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention. should be included within the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims (21)

1. The utility model provides a face coating by vaporization source for the coating by vaporization treats coating by vaporization material, makes its opening that can pass through the coating by vaporization mask version form the film on the device substrate, its characterized in that includes:

a substrate, the substrate being transparent;

the isolation wall structure is fixedly arranged on the substrate;

the isolation wall structure forms a plurality of first grooves which are separated from each other on the substrate; the height of the isolation wall structure and the characteristic dimension of the bottom surface of the first groove are any numerical value in the dimension range of being less than or equal to 10 millimeters and greater than or equal to 0.1 micrometer; the first groove is used for bearing a material to be evaporated; the first grooves are configured in such a way that the projection of one opening of the evaporation mask on the substrate covers the projection of N first grooves on the substrate during evaporation, wherein N is a positive integer;

the metal layer is arranged at the bottom of the first groove; the maximum distance from the upper surface of the metal layer to the lower surface of the metal layer is less than or equal to 1 micrometer; the upper surface of the metal layer is the surface of the metal layer, which is far away from the bottom surface of the first groove; the lower surface of the metal layer is a surface of the metal layer which is in contact with the bottom surface of the first groove.

2. The surface evaporation source according to claim 1, wherein the projection of at least part of the first recess on the substrate is completely coincident with the projection of the opening of the evaporation mask on the substrate.

3. The surface evaporation source according to claim 1, wherein the height of the partition wall structure is greater than or equal to 10 μm.

4. The source of claim 1, wherein the source comprises an evaporation zone and a film thickness test zone;

the evaporation area is used for evaporating a material to be evaporated to the device substrate;

the film thickness test area is used for forming a film for detecting the thickness of the film.

5. The source of claim 1, wherein the metal layer has a surface microstructure formed on an upper surface thereof;

the metal layer and the surface microstructure are of an integral structure.

6. The surface evaporation source according to claim 5, wherein the surface microstructure is a grid structure;

the grid structure includes a plurality of second grooves formed on an upper surface of the metal layer;

the depth of the second groove is 0.5-0.6 microns, and the distance from the bottom surface of the second groove to the lower surface of the metal layer is 0.4-0.5 microns.

7. The surface evaporation source according to claim 1, wherein the substrate and the isolation wall structure are of a unitary structure.

8. A method for manufacturing a surface evaporation source, which is used for evaporating a material to be evaporated so that the material can form a thin film on a device substrate through an opening of an evaporation mask, is characterized by comprising the following steps of:

providing a substrate, wherein the substrate is transparent;

forming an isolation wall structure on the substrate;

the isolation wall structure forms a plurality of first grooves which are separated from each other on the substrate; the height of the isolation wall structure and the characteristic dimension of the bottom surface of the first groove are any numerical value in the dimension range of being less than or equal to 10 millimeters and greater than or equal to 0.1 micrometer; the first groove is used for bearing a material to be evaporated; the first grooves are configured in such a way that the projection of one opening of the evaporation mask on the substrate covers the projection of N first grooves on the substrate during evaporation, wherein N is a positive integer;

forming a metal layer at the bottom of the first groove; the maximum distance from the upper surface of the metal layer to the lower surface of the metal layer is less than or equal to 1 micrometer; the upper surface of the metal layer is the surface of the bottom surface, far away from the first groove, of the metal layer; the lower surface of the metal layer is a surface of the metal layer which is in contact with the bottom surface of the first groove.

9. The method of claim 8, further comprising:

etching the upper surface of the metal layer to form a surface microstructure;

the upper surface of the metal layer is the surface of the bottom surface, far away from the first groove, of the metal layer.

10. The method of claim 9, wherein the etching the upper surface of the metal layer is dry etching.

11. The method of claim 9, wherein the method comprises:

the method for forming the isolation wall structure on the substrate comprises the steps of etching the substrate to form the isolation wall structure;

or, the method for forming the isolation wall structure on the substrate is to deposit an isolation wall structure material on the substrate and etch the isolation wall structure material to form the isolation wall structure.

12. An evaporation method, comprising:

adopting a surface evaporation source for evaporation;

the surface evaporation source is used for evaporating a material to be evaporated, so that the material can form a thin film on the device substrate through an opening of an evaporation mask, and the surface evaporation source comprises a substrate which is transparent; the isolation wall structure is fixedly arranged on the substrate; the isolation wall structure forms a plurality of first grooves which are separated from each other on the substrate; the height of the isolation wall structure and the characteristic dimension of the bottom surface of the first groove are any numerical value in a dimension range of being less than or equal to 10 millimeters and greater than or equal to 0.1 micrometer; the first groove is used for bearing a material to be evaporated; the first grooves are configured in such a way that the projection of one opening of the evaporation mask on the substrate covers the projection of N first grooves on the substrate during evaporation, wherein N is a positive integer; the metal layer is arranged at the bottom of the first groove; the maximum distance from the upper surface of the metal layer to the lower surface of the metal layer is less than or equal to 1 micrometer; the upper surface of the metal layer is the surface of the metal layer, which is far away from the bottom surface of the first groove; the lower surface of the metal layer is a surface of the metal layer which is in contact with the bottom surface of the first groove.

13. The vapor deposition method according to claim 12, further comprising:

arranging a device substrate on the opening side of the first groove of the surface evaporation source;

an evaporation mask is arranged between the surface evaporation source and the device substrate;

aligning the surface evaporation source with an evaporation mask plate and a device substrate;

wherein, the distance between the surface evaporation source and the evaporation mask is set to be millimeter or micron magnitude.

14. A vapor deposition method according to claim 13, wherein a projection of at least part of the first recess on the substrate completely coincides with a projection of the opening of the vapor deposition mask on the substrate.

15. A vapor deposition method according to claim 12, further comprising:

filling a material to be evaporated into the first groove of the surface evaporation source;

and after filling a material to be evaporated in the first groove of the surface evaporation source, removing the material to be evaporated above the isolation wall structure of the surface evaporation source.

16. A deposition method according to claim 15, wherein the first groove of the surface deposition source is filled with a material to be deposited by a dot or line deposition source, and the material to be deposited is attached to the surface deposition source.

17. A vapor deposition method according to claim 16, further comprising:

and an opening of the first groove of the surface evaporation source is arranged downwards for evaporation.

18. A vapor deposition method according to claim 15, wherein:

the method for removing the material to be evaporated above the isolation wall structure of the surface evaporation source comprises the steps of removing the material to be evaporated above the isolation wall structure by oblique laser irradiation;

or, the method for removing the material to be evaporated above the isolation wall structure of the surface evaporation source is to stick and remove the material to be evaporated above the isolation wall structure by attaching the film material with strong adhesive force to the upper surface of the surface evaporation source;

or, the method for removing the material to be evaporated above the isolation wall structure of the surface evaporation source is a method of removing the material to be evaporated above the isolation wall structure by using vacuum adsorption, and the material in the first groove is ensured not to be adsorbed away by controlling the gap between the vacuum part and the surface evaporation source.

19. A vapor deposition method according to claim 12, further comprising:

heating the surface evaporation source for evaporation;

the method for heating the surface evaporation source adopts a surface heat source for heating.

20. A vapor deposition method according to claim 12, further comprising:

heating the surface evaporation source for evaporation;

the method for heating the surface evaporation source comprises the steps of heating the surface evaporation source in a laser heating mode;

the laser heating mode is to irradiate a selected area of the surface evaporation source by laser and heat the selected area for evaporation.

21. An evaporation apparatus, comprising:

the surface evaporation source according to any one of claims 1 to 7.

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