CN110100254B - 用于谐振元件和超高频天线的双功能条带 - Google Patents
用于谐振元件和超高频天线的双功能条带 Download PDFInfo
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Abstract
一种组合的EAS和RFID电路,其包括HF线圈天线、UHF调谐环和耦合到条带的RFID芯片,该条带包括第一耦合区域和第二耦合区域。HF线圈天线的线圈端部被配置为电容地和/或导电地耦合到条带的第一耦合区域或第二耦合区域中的一者或二者。HF线圈天线可以包括匝之间的间隙,用于UHF调谐环的非干扰放置。在施加足够强度的谐振频率的场以致使超过线圈端部和耦合区域之间的击穿电压时,EAS电路可以停用。通过对线圈端部或耦合区域中的一者或二者的导电表面进行激光烧蚀处理,可以减小线圈端部和耦合区域之间的阈值击穿电压。
Description
相关申请的交叉引用
本申请要求2016年12月29日提交的美国临时专利申请号62/440,131的优先权和权益,其通过引用以其整体并入本文。
技术领域
本主题申请教导了一般涉及组合的HF和UHF电路的实施例,并且具体地涉及被配置为支持EAS天线元件和RFID芯片二者的耦合区域。
背景技术
电子商品防盗(EAS)系统通常在高频(HF)范围内操作,标称为8.2MHz,而某些射频识别(RFID)系统在超高频(UHF)范围内操作,标称为865MHz。EAS系统通常包括耦合到电容元件的HF线圈天线,这形成了谐振电路,该谐振电路被配置为在由附近场以EAS电路元件的谐振频率进行激励时返回信号。UHF RFID系统通常包括耦合到RFID芯片的UHF天线和/或调谐环,当UHF天线和/或调谐环由附近场以UHF天线的谐振频率和RFID芯片的内部电容激励时为RFID芯片供电。RFID芯片在被供电时发送编码的返回信号。通常,EAS装置和RFID装置用于不同目的,并且作为单独的物品被制造和销售。
附图说明
图1A是根据本公开的一个实施例的RFID条带的第一配置的图。
图1B是根据本公开的一个实施例的组合的EAS和RFID电路的第一配置的图。
图2A是根据本公开的一个实施例的RFID条带的第二配置的图。
图2B是根据本公开的一个实施例的被配置为降低阈值介电击穿电压的激光烧蚀电容板的图。
图3A是根据本公开的一个实施例的RFID条带的第三配置的图。
图3B是根据本公开的一个实施例的组合的EAS和RFID电路的第二配置的图。
图3C是根据本公开的一个实施例的图3B的组合的EAS和RFID电路的UHF调谐环的图。
图3B是根据本公开的一个实施例的组合的EAS和RFID电路的第三配置的图。
图4是根据本公开的一个实施例的组合的EAS和RFID电路的第四配置的图。
图4A是根据本公开的一个实施例的图4的组合的EAS和RFID电路的线圈天线的匝的第一配置的图。
图4B是根据本公开的一个实施例的图4的组合的EAS和RFID电路的线圈天线的匝的第二配置的图。
图5是根据本公开的一个实施例的折叠的EAS和RFID电路的第一配置的图。
图6是根据本公开的一个实施例的折叠的EAS和RFID电路的第二配置的图。
图7是根据本公开的一个实施例的组合的EAS和RFID电路的第五配置的图。
具体实施方式
通过示例并参考附图详细描述了本文公开的系统和方法。应当了解的是,可以对公开和描述的示例、布置、配置、组件、元件、仪器、装置方法、系统等进行适当地修改,并且可以期望针对特定应用对其进行修改。在本公开中,特定技术、布置等的任何识别或者与所呈现的特定示例相关,或者仅仅是对这种技术、布置等的一般描述。除非特别指定,否则具体细节或示例的识别不打算也不应该被视为是强制性或限制性的。
本公开说明了用于组合的EAS和RFID电路的条带的新模态。本文中公开的系统和方法描述了用于组合的EAS和RFID电路的条带和天线结构的各个方面。
EAS装置和RFID装置通常被设计用于不同的功能,因此被单独制造。例如,EAS装置通常附接到物品,并且用于通过在购买时要求在销售点终端处停用EAS装置来防止那些物品从商店中被盗。RFID装置可用于许多不同的目的,包括例如物品识别、物品跟踪和库存。可以了解的是,物品可以包含EAS装置和RFID装置二者,以提供两个装置的相应益处。例如,消费品可以包含EAS装置和RFID装置二者,以允许用于盗窃保护和库存管理。
将EAS装置和RFID装置的功能组合到单个装置中可以提供若干优点。一个优点是将EAS装置和RFID装置组合到单个装置中降低了多个标签所需的制造和库存成本。另一个优点是将EAS装置和RFID装置组合到单个装置中减少了必须单独附接到每个物品的装置的数量或者减少了将不同标签应用于物品的定制供应链的数量。这样减少了可能由物品的多个附接点引起的物品损坏的可能性。这还减少了由消费者或商家可能需要移除的附接装置的数量,从而潜在地节省时间并降低劳动成本。将EAS装置和RFID装置组合到单个装置中的又一个优点是射频元件可以有目的地彼此隔离以避免干扰。当单独的EAS装置和RFID装置非常接近时,一个装置中的射频元件可能干扰另一个装置的功能。可以设计单个组合的装置以降低干扰的可能性。
转到图1A,说明了条带结构100。条带结构100包括第一耦合焊盘102和第二耦合焊盘104。在超高频(UHF)谱中(例如在865MHz处或在865MHz附近)操作的RFID芯片108连接到条带结构100。当前提出的RFID芯片108的频率不限于任何特定频率。例如,RFID芯片108可以在13.56MHz处操作。在某些配置中,RFID芯片102可以经由条带结构100的窄部分106连接。电感元件UHF调谐环110可以被配置为在UHF频率范围中提供与RFID芯片108的电容的谐振。条带结构100可以直接耦合或导电地耦合到UHF调谐环110。
还参见图1B,线圈天线112耦合到条带结构100。线圈天线112包括内线圈端部114和外线圈端部116,内线圈端部114和外线圈端部116分别与条带结构100的第一耦合焊盘102和第二耦合焊盘104介接(interface)。在第一配置中,如图1所示,线圈天线112可以电容地耦合到条带结构100。在第二配置中,线圈天线112可以导电地耦合到条带结构100。线圈天线112由于其结构可以作为槽或极式UHF天线操作。在某些实施例中,可以提供附加的UHF天线元件118。
线圈天线112可以被配置为使得在线圈天线112的匝之间产生间隙120,允许UHF调谐环110被放置在线圈天线112的匝之间,如图1B所说明的。这可以有利地确保线圈天线112的金属不是直接在UHF调谐环110下方通过,这能够改变UHF调谐环110的电感并且能够引入不希望的损耗,或者以其他方式干扰电路的操作。
线圈天线112经由UHF调谐环110与由条带结构100提供的总电容谐振。UHF调谐环110可以呈现约20nH至约30nH量级的相对低的电感,这在用于线圈天线112的期望谐振频率下可以忽略。EAS系统的期望谐振吸收频率约为8.2MHz。因此,UHF调谐环110可以操作为通常被描述为桥接件的结构。
EAS组件的特征是当消费者购买物品时在销售点终端处停用电路的EAS功能的能力。通常,这是通过将电路暴露于电路谐振频率下或附近的场来实现的。电路在谐振频率下的这种暴露导致高电流在导体中流动,并且在电容组件两端生成相关联的高电压。
现在参考图2A,公开了一种改进的条带/桥接电路200。在改进的条带/桥接电路200中,天线线圈的每个线圈端部和相关联的耦合焊盘之间的重叠可以被配置为不同。在图2A所说明的实施例中,线圈天线的内线圈端部214可以被配置为小于线圈天线的外线圈端部216。第一耦合焊盘202和第二耦合焊盘204可以经由粘合剂分别地耦合到内线圈端部214和外线圈端部216,该粘合剂用作线圈端部和耦合焊盘之间的电介质。与线圈端部和耦合焊盘相关联的电容与重叠区域成比例,并且是:1/Ctotal=1/C1+1/C2,其中C1是内线圈端部214和第一耦合焊盘202之间的电容,并且C2是外线圈端部216和第二耦合焊盘204之间的电容。
尽管图2A的图示示出了仅针对线圈端部的尺寸变化,在其他实施例中,一个或更多个线圈端部和/或一个或更多个耦合焊盘的大小可以被配置为不同的,如本领域所理解的。
电路以谐振频率谐振,谐振频率由天线线圈和调谐线圈的电感确定,并且总电容由线圈端部和耦合焊盘的配置确定。当在谐振频率下或附近向电路提供电磁场时,共同电流流过电容器C1和C2。电容器C1和C2中的每个两端的电压与每个电容器的电容成反比。因此,通过使C1最小化并使C2最大化,可以在C1两端生成比在C2两端更高的电压。通过这种方式,在C1两端生成给定场强的可能的最高电压。用于将线圈端部耦合到耦合焊盘的电介质(粘合剂)可以被配制成在低于C1处提供的电压但高于C2处提供的电压的阈值击穿电压下经历介电击穿。可以通过改变电介质(粘合剂)的介电常数、电导率、厚度或其他合适特性来选择击穿电压,以便通过EAS门阅读器系统不可检测电路的任何谐振。
为了降低电容器击穿的电压,可以在电容器位置之间减少一个或更多个分离点。这可以通过压花或以其他方式机械地修改电容器板的金属层来实现。类似地,为了降低C1或C2的击穿电压,可以在线圈端部和耦合焊盘之间减少一个或更多个分离点。现在参考图2B,可以使用激光系统制造线圈端部(和/或耦合焊盘)的金属表面222上的结构220。在这样的实施例中,激光束224或引起诸如电子束的烧蚀的另一种合适的装置致使金属在激光束224的撞击点226处蒸发,这也熔化了相邻金属228,在撞击点226处的蒸发金属的压力迫使该相邻金属228离开并向上。这基于激光束224的特性(诸如激光束224如何被脉冲化,在撞击点226处入射的功率、波长、金属成分和其他因素)产生尖锐边缘的火山口状结构230。在某些实施例中,可以在一个或更多个金属表面222上制成多个点来降低击穿电压。
再次参见图1A、图1B和图2A的电路,在实施例中,UHF调谐环110、210可以被配置为当高电流流过UHF调谐环110、210时改变性质。在某些实施例中,UHF调谐环110、210可以包括熔丝型结构,其致使UHF调谐环110、210变为高于阈值AC电流的开路。例如,当电路的EAS功能被停用时,UHF调谐环110、210可以变为开路。通过断开UHF调谐环110、210,可以改变整个电路的调谐,从而导致改变的读取范围。例如,在某些实施例中,可以极大地减少或基本上消除读取范围。在其他某些实施例中,可以通过断开UHF调谐环110、210来增加电路的读取范围。示例熔丝型结构可以包括但不限于具有导电颗粒和/或结构的聚合物,其通常具有低电阻但是在由高AC电流引起的局部加热下导致不可逆地膨胀并且具有高电阻。
现在参考图3A,说明了双模式条带300,其被配置用于UHF响应和适于触发EAS门的谐振二者。双模式条带300包括不对称耦合焊盘,并且包括耦合到UHF RFID芯片308的相对大的耦合焊盘302和相对小的耦合焊盘304。还参考图3B,大耦合焊盘302被配置为足够大以支撑第一耦合区域310和第二耦合区域312。大耦合焊盘302被配置为用作横跨天线线圈的线圈端部的桥接件,其具有由如上所述的粘合剂性质和重叠区域所设置的定义电容。小耦合焊盘302被配置为支撑第三耦合区域314,用于耦合到附加的UHF天线元件318。因此,当UHF RFID芯片308耦合到一端部处的线圈天线和另一端部处的UHF RFID天线时,双模式条带300可以支持EAS功能和UHF RFID功能二者的谐振吸收。在某些配置中,第一耦合区域310、第二耦合区域312和/或第三耦合区域314可以是与重叠区域不同的大小;例如,耦合区域可以小于如图3B所说明的重叠区域。
现在还参考图3C,在某些实施例中,图3A和图3B的双模式条带300可以包括:UHF调谐环306。由于图3B的线圈天线的线圈端部二者都耦合到大耦合焊盘302(而不是小耦合焊盘304),UHF调谐环306可以如图3C所示定位,以便从线圈天线偏移以避免干扰。如上所述,UHF调谐环306可以包括熔丝型结构,其致使UHF调谐环306在阈值AC电流以上开路,例如当电路的EAS功能被停用时。
现在还参考图3(d),在某些实施例中,第一耦合点310和第二耦合点312可以被配置为在大小上不对称,以便使电压集中在耦合点中的一个(例如,如图3(d)所示的第二耦合点312)处,用于通过将电路暴露在电路谐振频率下的高强度场中来停用电路。
现在参考图4,描绘了修改的线圈天线结构400。修改的线圈天线结构400被配置为具有在匝之间具有窄间隙宽度402的大线圈。这致使线圈天线作为单桅帆船(sloop)型天线使得在UHF频率下,能量跨越窄间隙宽度402耦合以在UHF频率下形成短路,但是其允许HF频率下的能量围绕线圈天线匝正常地流动。对于用于UHF频率的线圈天线的一部分,线圈天线可以包括更宽的间隙宽度404。如前面针对其他实施例所述,包括条带406、调谐环408和RFID芯片410。以下可以增强匝之间的耦合:如图4A所说明的,通过例如激光切割窄间隙420来减小间隙宽度,和/或如图4B所说明的,通过切割曲线间隙422(或切割任何合适的图案)来增加匝之间的相对边缘到边缘面积。
参见图5,呈现了折叠电路500的第一实施例。折叠电路500可以被配置为使得当折叠电路500在折叠线502处被折叠时,条带510的耦合焊盘508用作线圈天线512的桥接件。耦合焊盘508可以导电地耦合到线圈天线512的第一线圈端部504。当折叠电路500被折叠时,耦合焊盘508可以电容地耦合到线圈天线512的第二线圈端部506,例如使用如上所述的电介质粘合剂。类似地,当折叠电路500被折叠时,附加的UHF天线元件518可以电容地耦合到条带510。
参见图6,呈现了折叠电路600的第二实施例。折叠电路600可以被配置为使得当折叠电路600在折叠线602处被折叠时,条带610的桥接部分608(第一耦合焊盘)接触线圈天线612的第一线圈端部606和第二线圈端部608。桥接部分608和线圈端部606、608使用如上所述的电介质粘合剂电容地耦合。类似地,当折叠电路600被折叠时,附加的UHF天线元件618可以电容地耦合到条带610的UHF部分616(第二耦合焊盘)。条带610和RFID芯片614可以被配置在基板620的一侧,而线圈天线612和UHF天线元件618可以被配置在基板620的第二侧上。基板620可以包括任何合适的材料,包括但不限于纸、卡、塑料(诸如PET)或织物(诸如尼龙或聚丙烯)。基板620可以在折叠线602处被折叠并且两个侧被层压在一起。
现在参考图7,在一个实施例中,UHF天线718的一部分用作桥接件。在这样的实施例中,UHF天线718的端部部处的结构通常被描述为顶部负载720,并且包括相对大面积的导体,用作具有线圈天线712的电路中的谐振电容器。为了制造,UHF天线718可以应用于线圈天线712,或者线圈天线712可以应用于UHF天线718的顶部负载720部分。RFID芯片可以被直接附接,通常被描述为倒装芯片,或者可以用如上所述的条带构建,并且可以在线圈天线712之前或之后被附接。关于RFID条带的生产和使用的附加细节在美国专利号7,158,037和美国专利号7,292,148中有所描述,每个专利通过引用以其各自的整体并入本文。
虽然已经描述了某些实施例,但是这些实施例仅通过示例方式呈现,并且不旨在限制本发明的范围。实际上,本文中描述的新颖实施例可以以各种其他形式体现;此外,在不脱离本发明的精神的情况下,可以对本文中描述的实施例的形式进行各种省略、替换和改变。所附权利要求及其等同物旨在覆盖落入本发明的精神和范围内的这些形式或修改。
Claims (19)
1.一种装置,其包括:
射频识别芯片即RFID芯片;
超高频调谐环即UHF调谐环,其导电地耦合到所述RFID芯片;
第一耦合焊盘,其导电地耦合到所述RFID芯片和UHF调谐环;
第二耦合焊盘,其导电地耦合到所述RFID芯片和UHF调谐环;以及
高频线圈天线即HF线圈天线,其包括:第一线圈端部,其被配置为与所述第一耦合焊盘耦合;以及第二线圈端部,其被配置为与所述第二耦合焊盘耦合。
2.根据权利要求1所述的装置,还包括:
UHF天线,其恰好耦合到所述第一耦合焊盘或所述第二耦合焊盘中的一个。
3.根据权利要求1所述的装置,其中所述线圈天线包括多个匝,并且其中所述线圈天线包括在第一匝和第二匝之间的间隙,用于在所述第一匝与所述第二匝之间放置所述UHF调谐环。
4.根据权利要求3所述的装置,其中在所述间隙中放置所述UHF调谐环被配置为减少所述HF线圈天线与所述UHF调谐环之间的电磁干扰。
5.根据权利要求1所述的装置,其中线圈端部和相关联的耦合焊盘导电地耦合。
6.根据权利要求1所述的装置,其中线圈端部和相关联的耦合焊盘电容地耦合。
7.根据权利要求6所述的装置,其中电容地耦合的所述线圈端部和所述相关联的耦合焊盘被配置为:在以强度足以超过所述线圈端部和相关联的耦合焊盘的阈值电容击穿电压的谐振频率施加场时开路。
8.根据权利要求6所述的装置,其中所述线圈端部或所述相关联的耦合焊盘中的一个或更多个包括通过激光烧蚀处理的导电表面。
9.根据权利要求8所述的装置,其中通过激光烧蚀处理的所述导电表面被配置为减小所述线圈端部与所述相关联的耦合焊盘之间的阈值电容击穿电压。
10.根据权利要求6所述的装置,还包括:
电介质粘合剂,其被配置为联接所述线圈端部和所述相关联的耦合焊盘。
11.根据权利要求6所述的装置,还包括:
基板,其被配置为沿折叠线折叠,并且在被折叠时联接至少一个线圈端部和一个相关联的耦合焊盘,并且
其中所述RFID芯片和所述相关联的耦合焊盘仅在所述基板的所述折叠线的一侧上移位,并且
其中所述线圈天线的至少一部分位于所述折叠线的另一侧上。
12.根据权利要求1所述的装置,其中所述第一线圈端部以第一电容C1电容地耦合到所述第一耦合焊盘,其中所述第二线圈端部以第二电容C2电容地耦合到所述第二耦合焊盘,且其中C1和C2不相等。
13.根据权利要求12所述的装置,其中C1和C2是不同的,这至少部分是由于所述第一线圈端部和所述第二线圈端部的几何形状的差异。
14.根据权利要求12所述的装置,其中C1和C2是不同的,这至少部分是由于所述第一线圈端部和所述第一耦合焊盘的重叠区域与所述第二线圈端部和所述第二耦合焊盘的重叠区域相比有差异。
15.根据权利要求10所述的装置,其中用于将所述线圈端部耦合到所述耦合焊盘的所述电介质粘合剂被配制成:在低于C1处提供的电压但高于C2处提供的电压的阈值击穿电压下经历介电击穿。
16.一种装置,其包括:
折叠电路,其在折叠线处被折叠;
包括桥接部分的条带,所述桥接部分接触线圈天线的第一线圈端部和第二线圈端部,使得所述桥接部分和线圈端部使用电介质粘合剂电容地耦合;
UHF天线元件,当所述折叠电路被折叠时,所述UHF天线元件耦合到所述条带的UHF部分;以及
基板,其中所述条带和RFID芯片被配置在所述基板的第一侧上,而所述线圈天线和UHF天线元件被配置在所述基板的第二侧上。
17.根据权利要求16所述的装置,其中所述装置包括直接附接芯片。
18.根据权利要求16所述的装置,其中所述基板在所述折叠线处被折叠并且所述第一侧和所述第二侧被层压在一起。
19.一种装置,其包括:
射频识别芯片即RFID芯片;
超高频调谐环即UHF调谐环,其导电地耦合到所述RFID芯片;
第一耦合焊盘,其导电地耦合到所述RFID芯片和UHF调谐环;
第二耦合焊盘,其导电地耦合到所述RFID芯片和UHF调谐环;以及
高频线圈天线即HF线圈天线,其包括:第一线圈端部,其被配置为与所述第一耦合焊盘耦合;以及第二线圈端部,其被配置为与所述第二耦合焊盘耦合;并且UHF天线环的一部分用作桥接件,使得UHF调谐环的所述端部处的结构包括相对大面积的导体并且用作具有所述线圈天线的电路中的谐振电容器。
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| CN204463187U (zh) * | 2014-12-30 | 2015-07-08 | 江苏联恒物宇科技有限公司 | 一种基于新型eas和uhf标签的双频卡 |
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| EP4539254A2 (en) | 2025-04-16 |
| BR112019012977A8 (pt) | 2023-02-28 |
| EP3563297A2 (en) | 2019-11-06 |
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