CN110116340A - A kind of polishing process of cadmium zinc telluride crystal wafer - Google Patents
A kind of polishing process of cadmium zinc telluride crystal wafer Download PDFInfo
- Publication number
- CN110116340A CN110116340A CN201910484697.7A CN201910484697A CN110116340A CN 110116340 A CN110116340 A CN 110116340A CN 201910484697 A CN201910484697 A CN 201910484697A CN 110116340 A CN110116340 A CN 110116340A
- Authority
- CN
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- Prior art keywords
- polishing
- zinc telluride
- crystal wafer
- cadmium zinc
- polishing process
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- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 26
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000007517 polishing process Methods 0.000 title claims abstract description 20
- 238000005498 polishing Methods 0.000 claims abstract description 53
- 238000000227 grinding Methods 0.000 claims abstract description 26
- 239000012530 fluid Substances 0.000 claims abstract description 17
- 238000003801 milling Methods 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 10
- 230000003746 surface roughness Effects 0.000 claims abstract description 10
- 229910001651 emery Inorganic materials 0.000 claims abstract description 8
- 238000012545 processing Methods 0.000 claims abstract description 7
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 4
- 239000000498 cooling water Substances 0.000 claims abstract description 4
- 230000003247 decreasing effect Effects 0.000 claims abstract description 4
- 238000005507 spraying Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 241000208340 Araliaceae Species 0.000 claims description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 claims description 2
- 235000008434 ginseng Nutrition 0.000 claims description 2
- 239000000126 substance Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- 229910001141 Ductile iron Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A kind of polishing process of cadmium zinc telluride crystal wafer, comprising the following steps: grinding: frosted extruding glass plate is selected to grind tellurium-zincium-cadmium crystal；Milling: the emery wheel of milling and grinding machine rotates and removes the surface damage layer of chip, and control removal amount is 80 μm -150 μm, surface roughness≤20nm, in milling process between chip and emery wheel spraying cooling water, be transferred to polishing process after processing is completed；Chemically mechanical polishing: the tilted shape gradually decreased among disk to disk circumference is set by carrying panel surface, tilt angle is 2 ± 0.5 degree, cadmium zinc telluride crystal wafer is placed on carrier, the polishing fluid that pH value is 9-11 is added during chemically mechanical polishing, control the revolving speed of grinding head are as follows: 3-20r/min, pressure 2-10N/cm2, removal amount is 20-40 μm, time 20-40min, and after polishing, polishing fluid flows back and returns to polishing fluid liquid-supplying system.The polishing process can effectively reduce chip scuffing, scratch, secretly split and can reduce wafer surface roughness, have extremely wide application prospect.
Description
Technical field
The present invention relates to Wafer Machining fields, and in particular to be a kind of cadmium-zinc-teiluride polishing process.
Background technique
Tellurium-zincium-cadmium crystal is broad stopband II-VI group compound semiconductor, is so far with excellent photoelectric properties
Room temperature X-ray and the ideal semiconductor material of gamma ray detector are manufactured, is widely used as infrared detector HgCdTe's
The fields such as epitaxial substrate and indoor temperature nucleus radiation detector.Existing cadmium zinc telluride crystal wafer polishing process usually first carries out machine to chip
Tool grinds and then is chemically-mechanicapolish polished, and during mechanical lapping, the material for making abrasive disk is usually spheroidal graphite cast-iron,
This material is easy to oxidize to obtain ferric oxide particle, to cause chip scuffing, scratch, secretly split.
Chemical Mechanical Polishing Technique (Chemical Mechanical Polishing, CMP) is obtained in IC manufacturing
Global planarizartion a kind of means, chemical-mechanical polishing system holds by a wafer holder rotated, carrying polishing pad
Load plate and polishing liquid supplying device three parts composition, when carrying out polishing, sub-micron nano-abrasive and chemical solution composition
Polishing fluid flowed between workpiece and polishing pad so that workpiece surface occurs to chemically react and generates one layer of reaction film, this is anti-
It answers film to be removed by the mechanism of abrasive grain and polishing pad, realizes ultraprecise table in the alternation procedure of chemical membrane and mechanical striping
Face processing.CMP technique compared with traditional purely mechanic polishing it is possible to prevente effectively from surface damage, compared with purifying optical polishing,
Polishing velocity is very fast, surface smoothness and polishing consistency are preferable.But in chemical mechanical grinding there are still the problem of be: it is brilliant
The intermediate linear velocity of piece is slower, bigger closer to outer rim linear velocity, causes and falls the unbalanced phenomenon of amount inside and outside chip and deposit always
So that the surface roughness of product can not further improve always.It is reported that existing cadmium zinc telluride crystal wafer rough surface
Degree is usually in 1nm or more.
Summary of the invention
The technical problem to be solved in the present invention is that chip scuffing can be effectively reduced, scratch, secretly split and can subtract by providing one kind
The polishing process of the cadmium zinc telluride crystal wafer of small surface roughness.
In order to solve the above-mentioned technical problem, the invention adopts the following technical scheme: a kind of polishing process of cadmium zinc telluride crystal wafer,
The following steps are included:
Step 1: mechanical lapping: selecting extruding glass plate and process to form the frosted extruding glass plate with frosting, so
Tellurium-zincium-cadmium crystal is ground afterwards.
Step 2: milling: chip is transmitted to micropore vacuum chuck and fixation using vacuum suction machinery hand, milling and grinding machine
Emery wheel rotates and removes the surface damage layer of chip, and control removal amount is 80 μm -150 μm, in chip and emery wheel in milling process
Between spraying cooling water, wafer surface roughness≤20nm, is transferred to chemical-mechanical polishing process after processing is completed.
Step 3: the inclination gradually decreased among chemically mechanical polishing from disk to disk circumference: is set by carrying panel surface
Shape, tilt angle are 2 ± 0.5 degree, and cadmium zinc telluride crystal wafer is placed on carrier, and pH value is added by polishing fluid liquid-supplying system
For the alkalescence polishing liquid of 9-11, the revolving speed of grinding head is controlled are as follows: 3-20r/min, pressure 2-10N/cm2, removal amount 20-40
μm, time 20-40min, on the contrary, after polishing, polishing fluid is returned for the direction of rotation of grinding head and the direction of rotation of carrier
It flows and returns to polishing fluid liquid-supplying system.
Preferably, the edge of frosted extruding glass plate is processed into D type or T-type in step 1.
Preferably, cooperated when being ground in step 1 with grinding additives and carried out, it is 6-9um's that the grinding additives, which select partial size,
Alumina lap powder.
Preferably, in step 2 when milling controlled at 15-25 DEG C.
Preferably, the tilt angle of carrier is 2 degree in step 3, and the revolving speed of grinding head is 11r/min, pressure 6N/
cm2, removal amount is 30 μm, time 30min.
Compared to the prior art, the invention has the following advantages: the present invention is made by the way that traditional milling apparatus is transformed
Traditional striped cast iron abrasive disk is substituted with frosted extruding glass plate, can be effectively prevent chip scuffing, scratch, secretly be split；To tellurium
In the process that zinc cadmium is polished, milling operation is increased between grinding and chemical-mechanical polishing step, by rationally controlling
The removal amount of milling reduces workload when chemical polishing, to save polishing fluid, and simplifies operation；It is thrown in chemistry
In the process of light, traditional acid polishing slurry is replaced by the alkalescence polishing liquid of 9-11 using pH, suitably reduces corrosion rate,
To preferably combine with the friction rate of polishing pad, and reduce the defect of wafer surface generation；The present invention is in chemical polishing
In, it sets carrier to by intermediate tilted shape high, both sides are low, tilt angle is 2 ± 0.5 degree, so that cadmium-zinc-teiluride
A small angle is formed between chip and polishing pad, and more polishing fluids not only can be made to enter the centre bit of chip
The revolving speed set, while controlling grinding head is 3-20r/min, pressure 2-10N/cm2, removal amount is 20-40 μm, the above parameter
Control is arranged plus the tilted shape of carrier, so that it is more balanced with the polishing removal amount of periphery among cadmium zinc telluride crystal wafer, into
One step reduces the surface roughness of chip.Shown in sum up, the polishing process of cadmium-zinc-teiluride provided by the invention can not only be operated
Simply, and chip scuffing can be effectively prevented, scratch, secretly split, after processed, the surface roughness Ra of cadmium zinc telluride crystal wafer reaches
0.5nm is hereinafter, have extremely wide application prospect.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that device therefor is chemically-mechanicapolish polished in the present invention.
Fig. 2 is the partial enlarged view of Fig. 1.
In figure:
1---- carrier 2---- polishing pad 3---- wafer holder.
Specific embodiment
Embodiment is given below so that the present invention to be specifically described, it is necessary to which indicated herein is following embodiment
It is used to further illustrate the present invention, should not be understood as limiting the scope of the invention, the ordinary skill in the field
Personnel still fall within protection scope of the present invention to some nonessential improvement of the invention made or adjustment according to this embodiment.
With partial size be 3cm in the present embodiment, thickness difference is 15 μm, the cadmium zinc telluride crystal wafer that flatness is 15 μm is as experiment sample
Product.
A kind of polishing process of cadmium zinc telluride crystal wafer, comprising the following steps:
Step 1: the extruding glass plate for the use of partial size being 300mm, striped ceramic disk working process is passed through on the surface of glass plate
At frosting, edge is processed into D type or T-type, and pressure is 0.9N/cm when attrition process2, revolving speed 70r/min, processing ginseng
Number can be reduced because the clast that chip friction and edge impact generate, grinding additives select good fortune Jimmy FO-1200# alumina lap
Powder, the grain diameter of the grounds travel are 6-9um, and partial size is more uniform and bulky grain ratio is 1%, can obviously reduce wafer surface
The defect of generation.
Step 2: milling: increasing milling-grinding equipment, transmittance process is carried out by vacuum suction machinery hand, and entire operation process exists
Inside equipment, the side of milling-grinding equipment installs exhaust outlet additional and avoids the particles effect in outside air, is processed using milling-grinding process, uses
Chip is transmitted to Working position by manipulator, and Working position is micropore vacuum chuck, chip is adsorbed on above sucker fixed, mill
Wheel is with the revolving speed high speed rotation of 4000r/min, to remove wafer surface damaging layer, removal amount is 120 μm, and surface roughness
≤ 20nm is not needed using polishing fluid in milling process, it is only necessary to which the spraying cooling water between chip and emery wheel avoids crystalline substance
The problems such as piece temperature distortion, surface color nigrescence, emery wheel excessive wear, occurs, and milling-grinding equipment main shaft increases cooling system, control
Temperature is 20 DEG C, to guarantee stability when chip processing, is put into clean box free of cleaning after processing is completed, is transferred to buffer
Sequence.
Step 3: chemically mechanical polishing: as shown in Figure 1 and Figure 2, cadmium zinc telluride crystal wafer is placed in wafer holder 3, will be carried
1 surface of disk is set as the tilted shape gradually decreased among disk to disk circumference, i.e. the central part of carrier 1 is higher, more leans on
Nearly plate edge is lower, and the angle tilted down is advisable with 2 ± 0.5 degree, and it is 2 degree that angle is tilted down in the present embodiment.Polishing pad 2
When bonding, finger pins the center of polishing pad 2, then from the central position to two Slideslips, until whole polishing pad 2 is bonded
It completes, after the completion of bonding, detects 2 surface condition of polishing pad, confirmation corrugationless, bubble-free and non-coverage condition.Due to buffer
Sequence carries out in clean room, so the problem of without the concern for dust and particles effect.Selected alkalescence polishing liquid, pH value 9-
11, using light pressure low-rotate speed, the revolving speed of grinding head is 11r/min, pressure 6N/cm2, removal amount is 30 μm, and the time is
30min, the direction of rotation of grinding head be it is clockwise, the direction of rotation of carrier 1 be it is counterclockwise, the direction of rotation of grinding head and hold
The direction of rotation of load plate is opposite.After chemically mechanical polishing, polishing fluid reflux returns to polishing fluid liquid-supplying system, does not remain in
In pipeline, avoids medical fluid from generating crystallization and polishing pad 2 is cleaned using cleaning solution while polishing fluid flows back, avoid because throwing
Light pads the excessively drying of 2 surfaces and causes to scratch to chip, can also remove the oxide and metal ion generated in process.
Performance test: the cadmium-zinc-teiluride Jing Guo above-mentioned chemical mechanical polish process is subjected to atomic force microscope test, discovery
Surface roughness Ra by polishing process provided by the invention treated cadmium zinc telluride crystal wafer is about 0.45nm.
Claims (6)
1. a kind of polishing process of cadmium zinc telluride crystal wafer, which comprises the following steps:
Step 1: mechanical lapping: it selects extruding glass plate and processes to form the frosted extruding glass plate with frosting, it is then right
Tellurium-zincium-cadmium crystal is ground；
Step 2: milling: chip being transmitted to micropore vacuum chuck and fixation, the emery wheel of milling and grinding machine using vacuum suction machinery hand
The surface damage layer of chip is rotated and removes, control removal amount is 80 μm -150 μm, in milling process between chip and emery wheel
Spraying cooling water, wafer surface roughness≤20nm, is transferred to chemical-mechanical polishing process after processing is completed；
Step 3: chemically mechanical polishing: setting the tilted shape gradually decreased among disk to disk circumference for carrying panel surface,
Tilt angle is 2 ± 0.5 degree, and cadmium zinc telluride crystal wafer is placed on carrier, and it is 9- that pH value, which is added, by polishing fluid liquid-supplying system
11 alkalescence polishing liquid controls the revolving speed of grinding head are as follows: 3-20r/min, pressure 2-10N/cm2, removal amount is 20-40 μm,
Time is 20-40min, the direction of rotation of grinding head and the direction of rotation of carrier on the contrary, after polishing, and polishing fluid flows back simultaneously
Return to polishing fluid liquid-supplying system.
2. the polishing process of cadmium zinc telluride crystal wafer according to claim 1, it is characterised in that: frosted extruding glass in step 1
It is processed into D type or T-type in the edge of disk.
3. the polishing process of cadmium zinc telluride crystal wafer according to claim 1, it is characterised in that: the ginseng that step 1 controls when grinding
Number are as follows: pressure 0.8-1.0N/cm2, revolving speed 70r/min.
4. the polishing process of cadmium zinc telluride crystal wafer according to claim 1, it is characterised in that: to grind when being ground in step 1
Auxiliary material cooperation carries out, and it is the alumina lap powder of 6-9um that the grinding additives, which select partial size,.
5. the polishing process of cadmium zinc telluride crystal wafer according to claim 1, it is characterised in that: control temperature in step 2 when milling
Degree is 15-25 DEG C.
6. the polishing process of cadmium zinc telluride crystal wafer according to claim 1-5, it is characterised in that: carried in step 3
The tilt angle of disk is 2 degree, and the revolving speed of grinding head is 11r/min, pressure 6N/cm2, removal amount is 30 μm, and the time is
30min。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910484697.7A CN110116340A (en) | 2019-06-05 | 2019-06-05 | A kind of polishing process of cadmium zinc telluride crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910484697.7A CN110116340A (en) | 2019-06-05 | 2019-06-05 | A kind of polishing process of cadmium zinc telluride crystal wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110116340A true CN110116340A (en) | 2019-08-13 |
Family
ID=67523711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910484697.7A Pending CN110116340A (en) | 2019-06-05 | 2019-06-05 | A kind of polishing process of cadmium zinc telluride crystal wafer |
Country Status (1)
| Country | Link |
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| CN (1) | CN110116340A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112372377A (en) * | 2020-10-30 | 2021-02-19 | 中国电子科技集团公司第十一研究所 | Polishing method of irregular tellurium-zinc-cadmium wafer |
| CN113843662A (en) * | 2021-10-26 | 2021-12-28 | 中国航发贵州黎阳航空动力有限公司 | Grinding method of runway part |
| CN115707558A (en) * | 2021-08-19 | 2023-02-21 | 环球晶圆股份有限公司 | Wafer polishing apparatus and wafer polishing method |
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| CN105415102A (en) * | 2015-12-01 | 2016-03-23 | 中国科学院上海技术物理研究所 | Method for grinding and polishing CdZnTe wafer without wax |
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| CN109290876A (en) * | 2017-07-25 | 2019-02-01 | 株式会社迪思科 | wafer processing method |
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| JPH04315570A (en) * | 1991-04-15 | 1992-11-06 | Seiko Electronic Components Ltd | Flat surface lapping device |
| CN1890055B (en) * | 2003-12-11 | 2010-05-26 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing method for reducing slurry backflow |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112372377A (en) * | 2020-10-30 | 2021-02-19 | 中国电子科技集团公司第十一研究所 | Polishing method of irregular tellurium-zinc-cadmium wafer |
| CN115707558A (en) * | 2021-08-19 | 2023-02-21 | 环球晶圆股份有限公司 | Wafer polishing apparatus and wafer polishing method |
| CN115707558B (en) * | 2021-08-19 | 2025-09-26 | 环球晶圆股份有限公司 | Wafer polishing device and wafer polishing method |
| CN113843662A (en) * | 2021-10-26 | 2021-12-28 | 中国航发贵州黎阳航空动力有限公司 | Grinding method of runway part |
| CN113843662B (en) * | 2021-10-26 | 2023-07-21 | 中国航发贵州黎阳航空动力有限公司 | Runway part grinding method |
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