CN110112083A - Ion implantation angle monitoring method and system - Google Patents
Ion implantation angle monitoring method and system Download PDFInfo
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- CN110112083A CN110112083A CN201910388905.3A CN201910388905A CN110112083A CN 110112083 A CN110112083 A CN 110112083A CN 201910388905 A CN201910388905 A CN 201910388905A CN 110112083 A CN110112083 A CN 110112083A
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 84
- 238000012544 monitoring process Methods 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 67
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 130
- 230000037361 pathway Effects 0.000 claims abstract description 85
- 238000001514 detection method Methods 0.000 claims description 123
- 238000005286 illumination Methods 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 description 152
- 235000012431 wafers Nutrition 0.000 description 142
- 239000007943 implant Substances 0.000 description 22
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000001594 aberrant effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241001499448 Heliodoxa imperatrix Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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Abstract
The present invention provides a kind of ion implantation angle monitoring method and systems, and described method includes following steps: being separated out monitor beam from the ion beam for wafer ion implanting；Using exposure pathways of the monitor beam in unloaded wafer as standard irradiation path, the standard irradiation path is determined；Using exposure pathways of the monitor beam when loading wafer as real-time exposure pathways, during carrying out ion implanting to the wafer, real-time exposure pathways described in real-time monitoring, and judge whether the real-time exposure pathways deviate the standard irradiation path.The present invention from the ion beam of ion implanting by being separated out monitor beam, during carrying out ion implanting to wafer, real-time monitoring is carried out to the exposure pathways of the monitor beam, to which whether real-time judge ion implantation angle deviates setting value, the drift of device electric parameter, improves product yield caused by avoiding because of ion implantation angle offset.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing field, more particularly to a kind of ion implantation angle monitoring method and
System.
Background technique
In the manufacturing process of semiconductor integrated circuit, ion implanting is one of important manufacturing process.Wherein, consider tunnel
The factors such as effect are worn, the implant angle of ion implanting has great influence for the electrical parameter of semiconductor devices.With partly leading
The characteristic size of body device constantly reduces, and the control accuracy requirement of implant angle is being continuously improved.
Currently, in ion injection machine table, Faraday cup generally will use as ion detection device, it is multiple by being arranged
Faraday cup finds out the exposure pathways of ion beam, and the relative positional relationship between coupled ion beam and multiple Faraday cups calculates
The incident angle of ion beam is obtained, to realize the detection to ion implantation angle.
However, due to needing that multiple Faraday cups, above-mentioned detection are arranged on the exposure pathways and peripheral position of ion beam
Process can only execute before and after the operation process that wafer carries out ion implanting, in order to avoid influence normal wafer ion implanting.It is i.e. brilliant
Circle actual implant angle in carrying out ion implantation process can not carry out real-time monitoring.If wafer is carrying out ion note
There is deviation in fashionable implant angle, can not just find in time.And it is found until by the methods of electrical testing of subsequent website
When deviation occurs in ion implantation angle, it can not often be remedied.This just will affect the device performance of product, or even cause whole
Batch wafer loss.
Therefore, it is necessary to propose a kind of new ion implantation angle monitoring method and system, solve the above problems.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of ion implantation angle monitoring sides
Method and system can not carry out real-time monitoring to ion implantation angle during ion implanting in the prior art for solving
Problem.
To achieve the above object and other related purposes, the present invention provides a kind of ion implantation angle monitoring method,
It is characterized in that, includes the following steps:
Monitor beam is separated out from the ion beam for wafer ion implanting；
Using exposure pathways of the monitor beam in unloaded wafer as standard irradiation path, the standard irradiation is determined
Path；
Using exposure pathways of the monitor beam when loading wafer as real-time exposure pathways, to the wafer carry out from
During son injection, real-time exposure pathways described in real-time monitoring, and judge whether the real-time exposure pathways deviate the mark
Quasi- exposure pathways.
As a kind of optinal plan of the invention, the ion beam includes the broad beam ion beam that width is greater than diameter wafer,
The method that the monitor beam is separated out from the broad beam ion beam includes: the baffle for being provided with through-hole, and the through-hole is located at
For the broad beam ion beam width beyond on the exposure pathways of the diameter wafer part, the broad beam ion beam passes through the through-hole
It is separated out the monitor beam.
As a kind of optinal plan of the invention, the method for determining the standard irradiation path includes: in the monitor beam
Direction of illumination on define a stationary plane, the stationary plane detects institute perpendicular to the direction of illumination, using ion detection device
Irradiation position of the monitor beam on the stationary plane is stated, and determines the standard irradiation path in conjunction with the position of the through-hole.
As a kind of optinal plan of the invention, the ion detection device is arranged in pairs on the stationary plane, in pairs
The ion detection device orientation and the monitor beam have common intersection point, the ion detection device is along the arrangement
Direction is movable, the pairs of ion detection device from the two sides of the monitor beam respectively close to the monitor beam, make it is described from
Sub- detection device, which is in, can't detect the monitor beam and the position closest to the monitor beam, with the determination monitor beam in institute
State the irradiation position on stationary plane.
As a kind of optinal plan of the invention, determine the monitor beam after the irradiation position on the stationary plane,
The position of the fixed ion detection device, during carrying out ion implanting to the wafer, when the ion detection fills
It sets when detecting the monitor beam, judges that the real-time exposure pathways have deviateed the standard irradiation path.
As a kind of optinal plan of the invention, the ion detection device be it is single, be set on the stationary plane and
It is movable on the stationary plane, by keeping the ion detection device mobile and detecting the monitor beam, with the determination prison
Survey irradiation position of the beam on the stationary plane.
As a kind of optinal plan of the invention, determine the monitor beam after the irradiation position on the stationary plane,
The position of the fixed ion detection device, during carrying out ion implanting to the wafer, when the ion detection fills
It sets when can't detect the monitor beam, judges that the real-time exposure pathways have deviateed the standard irradiation path.
As a kind of optinal plan of the invention, the ion detection device includes Faraday cup.
As a kind of optinal plan of the invention, the broad beam ion beam has in the two sides of the wafer beyond the crystalline substance
The part of circular diameter, the through-hole are set to the wafer two sides in pairs, are located at the broad beam ion beam width and exceed the wafer
On the exposure pathways of diameter portion, the broad beam ion beam is separated out monitor beam described in two beams by the pairs of through-hole, more
A ion detection device detects irradiation position of the monitor beam described in two beams on the stationary plane respectively, and in conjunction with described logical
The position in hole determines the standard irradiation path.
As a kind of optinal plan of the invention, the through-hole includes slit, and the length direction of the slit is perpendicular to institute
State the width direction of broad beam ion beam.
As a kind of optinal plan of the invention, during determining the standard irradiation path, protected by setting
The wafer carrying platform of baffle covering protection unloaded wafer, avoids wafer carrying platform described in the ion beam bombardment.
The present invention also provides a kind of ion implantation angles to monitor system characterized by comprising
Ion beam separating modules, for being separated out monitor beam from ion beam used in wafer ion implanting；
Position monitor module is positioned and is monitored for the exposure pathways to the monitor beam.
As a kind of optinal plan of the invention, the ion beam includes the broad beam ion beam that width is greater than diameter wafer,
The ion beam separating modules include the baffle with through-hole, and the through-hole is located at the broad beam ion beam width beyond the crystalline substance
On the exposure pathways of circular diameter part.
As a kind of optinal plan of the invention, the position monitor module includes the ion detection for detecting ion beam
Device, defines a stationary plane on the direction of illumination of the monitor beam, the stationary plane perpendicular to the direction of illumination, it is described from
Sub- detection device is set on the stationary plane.
As a kind of optinal plan of the invention, the ion detection device is arranged in pairs on the stationary plane, in pairs
The ion detection device orientation and the monitor beam have common intersection point, the ion detection device is along the arrangement
Direction is movable.
As a kind of optinal plan of the invention, the ion detection device be it is single, be set on the stationary plane and
It is movable on the stationary plane.
As a kind of optinal plan of the invention, the ion detection device includes Faraday cup.
As a kind of optinal plan of the invention, the through-hole is set to the wafer two sides in pairs, and each through-hole is set
There is the corresponding ion detection device.
As a kind of optinal plan of the invention, the through-hole includes slit, and the length direction of the slit is perpendicular to institute
State the width direction of broad beam ion beam.
As a kind of optinal plan of the invention, the ion beam separating modules further include covering protection unloaded wafer
The protection baffle of wafer carrying platform.
As a kind of optinal plan of the invention, the ion implantation angle monitoring system further includes in the monitoring
The deviation warning module of alarm is issued when the exposure pathways of beam deviate, the deviation warning module connects the position monitor
Module.
As described above, the present invention provides a kind of ion implantation angle monitoring method and system, by from ion implanting
It is separated out monitor beam in ion beam, during carrying out ion implanting to wafer, the exposure pathways of the monitor beam are carried out
Real-time monitoring is avoided and is led because of ion implantation angle offset so that whether real-time judge ion implantation angle deviates setting value
The drift of the device electric parameter of cause, improves product yield.
Detailed description of the invention
Fig. 1 is shown as the flow chart of the ion implantation angle monitoring method provided in the embodiment of the present invention one.
Fig. 2 is shown as determining standard irradiation path in the ion implantation angle monitoring method provided in the embodiment of the present invention one
Schematic diagram.
Fig. 3 is shown as monitoring real-time exposure pathways in the ion implantation angle monitoring method provided in the embodiment of the present invention one
Schematic diagram.
Fig. 4 is shown as moving iron detection device in the ion implantation angle monitoring method provided in the embodiment of the present invention one
Schematic diagram.
Fig. 5, which is shown as in the ion implantation angle monitoring method provided in the embodiment of the present invention one real-time exposure pathways, to be deviateed
The schematic diagram in standard irradiation path.
Fig. 6 is shown as the irradiation of broad beam ion beam in the ion implantation angle monitoring method provided in the embodiment of the present invention one
Pass through the top view of plane.
Fig. 7 is shown as baffle and wafer carrying platform in the ion implantation angle monitoring method provided in the embodiment of the present invention one
Front view.
Fig. 8 is shown as carrying out showing for wafer load in the ion implantation angle monitoring method provided in the embodiment of the present invention one
It is intended to.
Fig. 9 is shown as carrying out ion implanting scanning in the ion implantation angle monitoring method provided in the embodiment of the present invention one
Schematic diagram.
Figure 10 is shown as determining standard irradiation road in the ion implantation angle monitoring method provided in the embodiment of the present invention two
The schematic diagram of diameter.
Figure 11 is shown as monitoring irradiation road in real time in the ion implantation angle monitoring method provided in the embodiment of the present invention two
The schematic diagram of diameter.
It is inclined that Figure 12 is shown as in the ion implantation angle monitoring method provided in the embodiment of the present invention two real-time exposure pathways
Schematic diagram from standard irradiation path.
Figure 13 is shown as the photograph of broad beam ion beam in the ion implantation angle monitoring method provided in the embodiment of the present invention two
Penetrate the top view by plane.
Figure 14 is shown as monitoring irradiation road in real time in the ion implantation angle monitoring method provided in the embodiment of the present invention three
The schematic diagram of diameter.
Figure 15 is shown as the photograph of broad beam ion beam in the ion implantation angle monitoring method provided in the embodiment of the present invention three
Penetrate the side view by plane.
Component label instructions
100 wafers
101 broad beam ion beams
101a monitor beam
101b stationary plane
102 baffles
102a through-hole
103 ion detection devices
103a guide rail
104 wafer carrying platforms
105 protection baffles
106 drive mechanisms
200 wafers
201 broad beam ion beams
201a monitor beam
201b stationary plane
202 baffles
202a through-hole
203 ion detection devices
203a guide rail
204 wafer carrying platforms
205 protection baffles
206 drive mechanisms
300 wafers
301 broad beam ion beams
301a monitor beam
301b stationary plane
302 baffles
302a through-hole
303 ion detection devices
303a guide rail
304 wafer carrying platforms
306 drive mechanisms
S1~S3 step 1)~step 3)
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands further advantage and effect of the invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 is please referred to 15.It should be noted that diagram provided in the present embodiment only illustrates this hair in a schematic way
Bright basic conception, though only show in diagram with related component in the present invention rather than component count when according to actual implementation,
Shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind, and its component
Arrangement form may also be increasingly complex.
Embodiment one
Fig. 1 to 9 is please referred to, a kind of ion implantation angle monitoring method is present embodiments provided, includes the following steps:
1) monitor beam is separated out from the ion beam for wafer ion implanting；
2) exposure pathways using the monitor beam in unloaded wafer determine that the standard is shone as standard irradiation path
Rays diameter；
3) exposure pathways using the monitor beam when loading wafer are carried out as real-time exposure pathways to the wafer
During ion implanting, real-time exposure pathways described in real-time monitoring, and it is described to judge whether the real-time exposure pathways deviate
Standard irradiation path.
In step 1), the S1 of Fig. 1 is please referred to, is separated out monitor beam from the ion beam for wafer ion implanting.By
In the ion beam for wafer ion implanting when wafer carries out ion implanting, it is generally terminated in the crystal column surface, and adjoint
Ion implanting in the wafer.And the Faraday cup plasma detection device for being used for ion detection is also by described in reception
Ion beam carries out ion detection.This mean that the detection to parameters such as the implant angles of ion beam can not with wafer from
Son is injected while being carried out.Generally can when wafer is not loaded with ion injection machine table, by being detected to unloaded ion beam, into
And the ion beam of wafer ion implanting is monitored indirectly.The present invention passes through from the ion beam for wafer ion implanting
Be separated out monitor beam, the monitor beam be monitored, so as to monitor in real time wafer ion implanting ion beam note
Enter the parameters such as angle.
In step 2), the S2 of Fig. 1 is please referred to, using exposure pathways of the monitor beam in unloaded wafer as standard
Exposure pathways determine the standard irradiation path.When carrying out ion implanting to wafer, the angle to ion beam used is needed
It is controlled, generally in ion injection machine table unloaded wafer, adjusts and determine ion implantation angle.However, with wafer
The conditions variation such as loading disturbance, ion implantation angle when the practical progress ion implanting of wafer may deviate.One
The denier deviation range is greater than the acceptable redundancy of processing procedure, and the appearance that will result in device performance is abnormal.In the present invention, by fixed
Adopted standard irradiation path, by the monitor beam using the exposure pathways that standard input angle passes through as standard irradiation path,
And determination is adjusted to the standard irradiation path.It, will not be to crystalline substance when betiding unloaded wafer due to the above process
Round ion implantation process impacts.
In step 3), the S3 of Fig. 1 is please referred to, is shone using exposure pathways of the monitor beam when loading wafer as real-time
Rays diameter, during carrying out ion implanting to the wafer, real-time exposure pathways described in real-time monitoring, and judge the reality
When exposure pathways whether deviate the standard irradiation path.By being shone with the standard of the monitor beam identified in step 2)
Rays diameter is compared, and during judging that the wafer carries out ion implanting, whether the real-time exposure pathways deviate institute
State standard irradiation path.During the i.e. described wafer carries out ion implanting, whether there is or not the angles for deviateing setting for ion implantation angle.
Provided ion implantation angle monitoring method through the invention, can be monitored in real time in wafer ion implantation process, ion beam
Implant angle whether deviate from setting value.Since the monitor beam is directly separated out from the ion beam, Ke Yizhi
It sees and accurately reflects whether the implant angle of the ion beam offset occurs.Ion implanting operation is being carried out to wafer
When, when the real-time exposure pathways for monitoring the monitor beam are deviated compared to the standard irradiation path, indicate that described
There is offset in the implant angle of ion beam, can stop the ion implanting operation of present lot wafer in time at this time, and by
It transfers to engineer to carry out aberrant batches processing, avoids product abnormal.
As an example, as shown in Figures 2 and 3, the ion beam includes the broad beam ion beam that width is greater than 100 diameter of wafer
101, the method that the monitor beam 101a is separated out from the broad beam ion beam 101 includes: the gear for being provided with through-hole 102a
Plate 102, the through-hole 102a are located at the exposure pathways that 101 width of broad beam ion beam exceeds 100 diameter portion of wafer
On, the broad beam ion beam 101 is separated out the monitor beam 101a by the through-hole 102a.Currently, with semiconductor technology
For processing procedure for the continuous improvement of ion implanting required precision, one chip ion injection machine table is excellent compared to the technique of batch pouring-in board
Gesture is further obvious.Wherein, wide ion beam source is widely used in monolithic due to its good uniformity and angle control ability
In formula ion implantation technology.As shown in Figures 2 and 3, in the present embodiment, one chip ion injection machine table uses wide ion beam
101 carry out ion implanting.Wherein, the case where when Fig. 2 is one chip ion injection machine table unloaded wafer, Fig. 3 be one chip from
The case where when the son injection board loading wafer 100.From figure 3, it can be seen that due to the width of the broad beam ion beam 101
Greater than 100 diameter of wafer, peripheral region in 100 two sides of wafer, including the baffle 102 and the through-hole
102a also covers irradiation by the broad beam ion beam 101, by the baffle 102 and the through-hole 102a, is separated out described
Monitor beam 101a.It should be pointed out that in other case study on implementation of the invention, according to the ion implanting work of the board monitored
The difference of skill mode can also use the ion beam source of other forms, such as spot formula ion beam, this is without departing from of the invention
Implementation principle, as long as suitable monitor beam can be isolated from the ion beam.For example, being directed to spot formula ion beam, still
Can setting unit is blocked on its exposure pathways baffle, to be separated out monitor beam.In view of the diameter of spot formula ion beam
Smaller, the components such as corresponding baffle can be with scaled-back size.
As an example, as shown in Fig. 2, the method for determining the standard irradiation path includes: in the monitor beam 101a
A stationary plane 101b is defined on direction of illumination, the stationary plane 101b is perpendicular to the direction of illumination, using ion detection device
Irradiation position of the 103 detection monitor beam 101a on the stationary plane 101b, and it is true in conjunction with the position of the through-hole 102a
The fixed standard irradiation path.In Fig. 2, the stationary plane 101b is a virtual plane perpendicular to the direction of illumination,
The ion detection device 103 is set on the stationary plane 101b, and to the monitor beam 101a in the stationary plane 101b
On irradiation position detected.The direction of illumination of the broad beam ion beam 101 and its monitor beam 101a being separated out hang down
Directly in the stationary plane 101b.From figure 2 it can be seen that by detecting the monitor beam 101a on the stationary plane 101b
Irradiation position, and in conjunction with the position of the through-hole 102a, it can pass through in the plane that the broad beam ion beam 101 irradiation passes through
Two o'clock determines that the mode of a straight line determines the standard irradiation path.
As an example, as shown in Figure 2 and Figure 4, the ion detection device 103 is arranged in pairs in the stationary plane 101b
On, the orientation of the pairs of ion detection device 103 and the monitor beam 101a have common intersection point, the ion detection
Device 103 is movable along the orientation, and the pairs of ion detection device 103 is distinguished from the two sides of the monitor beam 101a
Close to the monitor beam 101a, being in the ion detection device 103 can't detect the monitor beam 101a and closest to institute
The position of monitor beam 101a is stated, with irradiation position of the determination monitor beam 101a on the stationary plane 101b.In this implementation
It is described to detect and determine by being located in the pairs of ion detection device 103 of the two sides the monitor beam 101a in example
Irradiation position of the monitor beam 101a on the stationary plane 101b.Specifically, as shown in figure 4, monitor beam 101a two sides
The pairs of ion detection device 103 is respectively from the position far from the monitor beam 101a, along guide rail 103a from figure
Middle arrow direction is approached to the monitor beam 101a.Optionally, the ion detection device 103 includes Faraday cup.Faraday
Cup can be with precise measurement charged particle incident intensity, when the ion detection device 103 moves to the photograph of the monitor beam 101a
When on rays diameter, so that it may accurately learn the accurate location of exposure pathways.Certainly, the ion detection device 103 can use
Other can accurately detect the device of charged ion, such as scintillator or semiconductor detector etc..Detecting the monitor beam
After 101a, the position of the pairs of ion detection device 103 of the two sides the monitor beam 101a is adjusted again, is at just
It can't detect the monitor beam 101a and the position closest to the monitor beam 101a well, as shown in Figure 2.In this way, passing through sandwiched
The ion detection device 103 in the two sides the monitor beam 101a has determined that the monitor beam 101a in the stationary plane
Irradiation position on 101b also determines the exposure pathways of the monitor beam 101a in conjunction with the position of the through-hole 102a.
As an example, as shown in Figure 3, Figure 5 and Figure 6, determining the monitor beam 101a on the stationary plane 101b
After irradiation position, the position of the fixed ion detection device 103, during carrying out ion implanting to the wafer 100,
When the ion detection device 103 detects the monitor beam 101a, judge that the real-time exposure pathways have deviateed the mark
Quasi- exposure pathways.As shown in figure 3, the real-time exposure pathways are without departing from the mark when being that the wafer 100 carries out ion implanting
The case where quasi- exposure pathways.As shown in figure 5, the real-time exposure pathways deviate institute when being that the wafer 100 carries out ion implanting
The case where stating standard irradiation path.During carrying out ion implanting to the wafer 100, because of the broad beam ion beam 101
Implant angle standard implant angle appearance of adjusted setting when comparing unloaded wafer deviation, the prison being separated out
The irradiating angle for surveying beam 101a will also deviate.Specifically, as shown in fig. 6, being that the irradiation of the broad beam ion beam 101 passes through
The top view of plane.Wherein, shown in solid when being that the wafer 100 carries out ion implanting, the broad beam ion beam 101 and described
Monitor beam 101a's is actually implanted into angle；When being wafer 100 described in unloaded shown in dotted line, the broad beam ion beam 101 and institute
State the standard implant angle for adjusting calibration of monitor beam 101a.It can also be seen that working as the broad beam ion beam 101 from Fig. 6
Implant angle when deviation occurs in the standard implant angle of adjusted setting when comparing unloaded wafer, the monitor beam 101a's
Also there is deviation in implant angle, that is to say that the real-time exposure pathways deviate from the standard irradiation path, and by the ion
Detection device 103 is found out.For broad beam ion Shu Eryan used in one chip ion implanting, implant angle offset of interest
It typically occurs in its irradiation and passes through plane, i.e., the deflection in plane shown in Fig. 6, without having the inclined of angle with plane
It moves.This is also the present embodiment in two Faraday cups of the left and right sides of monitor beam 101a setting, without the next on it
The reason of installing Faraday cup.It is pointed out that Fig. 6 only brief variation relation for illustrating ion beam exposure pathways, saves
Some components unrelated with irradiating angle.
As an example, as shown in Figure 3 and Figure 7, the broad beam ion beam 101 has in the two sides of the wafer 100 to be exceeded
The part of 100 diameter of wafer, the through-hole 102a are set to 100 two sides of wafer in pairs, are located at the broad beam ion beam
For 101 width beyond on the exposure pathways of 100 diameter portion of wafer, the broad beam ion beam 101 is logical by pairs described
Hole 102a is separated out monitor beam 101a described in two beams, and multiple ion detection devices 103 detect monitor beam described in two beams respectively
Irradiation position of the 101a on the stationary plane 101b, and the standard irradiation road is determined in conjunction with the position of the through-hole 102a
Diameter.As shown in figure 3, in the present embodiment, the broad beam ion beam 101 has in the two sides of the wafer 100 beyond the crystalline substance
The part of 100 diameters of circle.In this way, the monitor beam 101a can be separated out respectively from the two sides of the wafer 100.In the present invention
Other case study on implementation in, the broad beam ion beam 101 can also only the unilateral side of the wafer 100 have exceed the wafer
The part of 100 diameters, and only the monitor beam 101a is separated out from the side of the wafer 100.The present invention is from the wafer 100
Two sides be separated out monitor beam 101a described in two beams, this will make monitoring result more precise and stable.As shown in fig. 7, being this implementation
The baffle 102 provided in example and the front view of wafer carrying platform 104, wherein dotted line position denotes the wafer 100
" loaded " position.It is described in conjunction with Fig. 3 as can be seen that the baffle 102 is arranged in pairs in the two sides of the wafer carrying platform 104
Baffle 102 is equipped with the through-hole 102a.Optionally, the through-hole 102a includes slit, and the length direction of the slit is vertical
In the width direction of the broad beam ion beam 101, and the length of the slit is at least not less than the diameter of the wafer 100.?
In other case study on implementation of the invention, the geometry and size of the through-hole 102a can be carried out according to used ion beam
It is adjusted flexibly.
As an example, as shown in Fig. 2, protecting baffle 105 by setting during determining the standard irradiation path
The wafer carrying platform 104 of covering protection unloaded wafer avoids wafer carrying platform 104 described in the ion beam bombardment.Determine institute
The step of stating standard irradiation path is carried out in wafer unloaded, this means that in the wafer carrying platform 104 at this time
There is no wafer covering, the wafer carrying platform 104 will be directly exposed under the irradiation of high energy ion beam.Due to the wafer carrying
Platform 104 is integrated with the precise part with the functions such as wafer adsorption and cooling, itself be also need according to corrective maintenance state into
The consumptive material of row replacement.In order to reduce cost of equipment maintenance as far as possible, extend the service life of the wafer carrying platform 104, this hair
It is bright to cover the wafer carrying platform 104 by introducing the protection baffle 105 in wafer unloaded, with reduce as far as possible from
Beamlet bombards the damage for the wafer carrying platform 104.
Fig. 2 to Fig. 9 is please referred to, the primary ions injection process of one chip ion injection machine table will be set forth in order below
In, how ion implantation angle monitoring method provided by the present invention to be used to carry out real-time monitoring to ion implantation angle.
As shown in Fig. 2, being kept off when the wafer 100 described in the one chip ion injection machine table unloaded using the protection
Plate 105 covers the wafer carrying platform 104, to reduce damage of the ion beam bombardment for the wafer carrying platform 104 as far as possible.
By the through-hole 102a being arranged on the baffle 102, the monitor beam is separated out from the broad beam ion beam 101
101a。
As shown in figure 4, the exposure pathways of the monitor beam 101a are determined by multiple ion detection devices 103, and
It is set to standard irradiation path, the position of fixed multiple ion detection devices 103.
As shown in figure 8, the irradiation of the broad beam ion beam 101 and the position of multiple ion detection devices 103 are kept,
It is driven by drive mechanism 106, the wafer carrying platform 104, the baffle 102 and the protection baffle 105 is fallen, carried out
Wafer load.
As shown in figure 9, removing the protection baffle 105, the wafer 100 is loaded into the wafer carrying platform 104,
And driven by the drive mechanism 106, make the wafer carrying platform 104 start to be moved upward, starts ion implantation process.
In relative movement, the broad beam ion beam 101 is slowly inswept to bottom from 100 top of wafer, completes primary ions note
Enter process.Wherein, the case where when Fig. 3 illustrates the broad beam ion beam 101 scanning to 100 middle part of wafer.In conjunction with Fig. 9 and
Fig. 3 can be seen that in scanning moving process, the monitoring that the broad beam ion beam 101 is separated out through the through-hole 102a
The ion detection device 103 that the exposure pathways of beam 101a are located in measurement always is monitored.As shown in figure 5, when described
The implant angle of broad beam ion beam 101 is when the disturbance due tos such as board exception deviate, the exposure pathways of the monitor beam 101a
Also offset is produced, and can be found out in time by the ion detection device 103, generates wafer in real time when carrying out ion implanting
Ion implantation angle can be found in time extremely.
Fig. 2, Fig. 3 and Fig. 7 are please referred to, the present embodiment additionally provides a kind of ion implantation angle monitoring system, comprising:
Ion beam separating modules, for being separated out monitor beam from ion beam used in wafer ion implanting；
Position monitor module is positioned and is monitored for the exposure pathways to the monitor beam.
As an example, as shown in Figures 2 and 3, the ion beam includes the broad beam ion beam that width is greater than 100 diameter of wafer
101, the ion beam separating modules include the baffle 102 with through-hole 102a, and the through-hole 102a is located at the broad beam ion
101 width of beam is beyond on the exposure pathways of 100 diameter portion of wafer.The present invention is by introducing the baffle 102, to described
Broad beam ion beam 101 is separated, and therefrom isolates the monitor beam 101a of monitoring.
As an example, as shown in Figures 2 and 3, the position monitor module includes the ion detection for detecting ion beam
Device 104 defines a stationary plane 101b on the direction of illumination of the monitor beam 101a, and the stationary plane 101b is perpendicular to described
Direction of illumination, the ion detection device 103 are set on the stationary plane 101b.Optionally, the ion detection device 103
It is arranged in pairs on the stationary plane 101b, the orientation and the monitor beam of the pairs of ion detection device 103
101a has common intersection point, and the ion detection device 103 is movable along the orientation.In the present embodiment, the positioning prison
Surveying module further includes guide rail 103a, and multiple ion detection devices 103 arrange on the guide rail 103a and along the guide rail
103a is movable.The ion detection device 103 includes Faraday cup.
As an example, the through-hole 102a is set to 100 two sides of wafer in pairs, each as shown in Fig. 2, Fig. 3 and Fig. 7
The through-hole 102a is equipped with the corresponding ion detection device 103.In the present embodiment, two through-hole 102a are equipped with pair altogether
4 answered the ion detection device 103.Optionally, the through-hole 102a includes slit, and the length direction of the slit is vertical
In the width direction of the broad beam ion beam 101.
It should be pointed out that in the present embodiment, the baffle 102 and the wafer carrying platform 104 are relatively fixed, together
The relatively described broad beam ion beam 101 moves up and down.Therefore, the shape of the through-hole 102a needs to be designed as slit accordingly, so that
During the wafer carrying platform 104 moves up and down, the broad beam ion beam 101 can pass through the through-hole 102a always
It is separated out the monitor beam 101a.In other case study on implementation of the invention, the baffle 102 can also be with the broad beam ion
Beam 101 is relatively fixed, and relatively moves with the wafer carrying platform 104.At this point, the shape of the through-hole 102a just need not be specially
It is designed as slit shape, can choose the shapes such as circular hole.
As an example, as shown in Fig. 2, the wafer that the ion beam separating modules further include covering protection unloaded wafer is held
The protection baffle 105 of microscope carrier 104.In order to reduce cost of equipment maintenance as far as possible, extend the wafer carrying platform 104 uses the longevity
Life, the present embodiment cover the wafer carrying platform 104 by introducing the protection baffle 105, are banged with reducing ion beam as far as possible
Hit the damage for the wafer carrying platform 104.
As an example, the ion implantation angle monitoring system further includes for the exposure pathways generation in the monitor beam
The deviation warning module of alarm is issued when deviation, the deviation warning module connects the position monitor module.The present invention is taken
One of the technical effect obtained is exactly can be when wafer carries out ion implanting, and whether the angle of real-time monitoring ion implanting generates partially
It moves.This implementation connects the position monitor module by introducing the deviation warning module.When the position monitor module is found
When occurring ion implantation angle offset in wafer ion implantation process, the deviation warning module can issue alarm in time, with
Just technical staff disposes aberrant batches product in time.Specifically, in this embodiment, when ion implantation angle is normal, i.e., described
Ion inspection of the real-time exposure pathways of monitor beam 101a without departing from the standard irradiation path, in the position monitor module
Ion should be can't detect by surveying device 103.At this point, the deviation warning module judges that ion implantation angle is normal, alarm is not issued；
And when ion implantation angle is abnormal offset, the real-time exposure pathways of the monitor beam 101a deviate the standard irradiation road
Diameter, the ion detection device 103 in the position monitor module should detect ion.At this point, the deviation warning module
It is abnormal to judge that ion implantation angle occurs, and issues alarm, stops board operation.
Embodiment two
Figure 10 to Figure 13 is please referred to, a kind of ion implantation angle monitoring method and system are present embodiments provided, with implementation
Embodiment provided in example one is compared, difference in this case is that, for a branch of monitor beam, using single ion detection
Device is detected and is positioned to exposure pathways.
As an example, as shown in Figure 10, for a branch of monitor beam 201a, the ion detection device 203 is single, setting
In movable on the stationary plane 201b and on the stationary plane 201b, by keeping the ion detection device 203 mobile and examining
The monitor beam 201a is measured, with irradiation position of the determination monitor beam 201a on the stationary plane 201b.Specifically, exist
In Figure 10, the monitor beam 201a is detected in wafer unloaded, and determines the standard irradiation path.The wide beam
Ion beam 201 is separated out the monitor beam 201a by the through-hole 202a on baffle 202.Pass through the movement ion detection device
203, it is at the position for being able to detect that the monitor beam 201a just, and be fixed in the position, described in determination
Standard irradiation path.It is the same as example 1, the ion detection device 203 is set on guide rail 203a, and can be along described
Guide rail 203a is mobile, the protection protection covering wafer carrying platform 204 of baffle 205, the baffle 202, the covering wafer carrying platform
204 and the protection baffle 205 can by drive mechanism 206 drive move up and down.
As an example, as shown in Figure 11 to Figure 13, determining irradiation of the monitor beam 201 on the stationary plane 201b
Behind position, institute is worked as during carrying out ion implanting to the wafer 200 in the position of the fixed ion detection device 203
When stating ion detection device 203 and can't detect the monitor beam 201a, judge that the real-time exposure pathways have deviateed the standard
Exposure pathways.As shown in figure 11, in wafer ion implantation process, if the real-time exposure pathways shine without departing from the standard
Rays diameter, i.e. ion implantation angle do not shift, then the ion detection device 203 should be able to real-time monitor ion.Such as
Shown in Figure 12, when the real-time exposure pathways deviate the standard irradiation path, i.e. ion implantation angle shifts, then described
Ion detection device 203 can not just detect ion.It as shown in figure 13, is that the irradiation of the broad beam ion beam 201 passes through plane
Top view.Wherein, shown in solid when being that the wafer 200 carries out ion implanting, the broad beam ion beam 201 and the monitoring
Beam 201a's is actually implanted into angle；When being wafer 200 described in unloaded shown in dotted line, the broad beam ion beam 201 and the prison
Survey the standard implant angle for adjusting calibration of beam 201a.It can be observed from fig. 13 that working as the injection of the broad beam ion beam 201
When there is deviation in the standard implant angle of adjusted setting when angle is compared to unloaded wafer, the injector angle of the monitor beam 201a
Also there is deviation in degree, that is to say that the real-time exposure pathways deviate from the standard irradiation path, and no longer examined by the ion
Device 203 is surveyed to be found out.The other parts content of this embodiment scheme is the same as example 1, and details are not described herein.
The scheme of the present embodiment is using ion detection device pairs of in single ion detection device alternate embodiment one, phase
Respectively there is superiority and inferiority than the scheme in embodiment one, can be accepted or rejected according to actual needs.Since the diameter of the monitor beam can be with
It is sized for smaller by reduce the through-hole, and in contrast, the bore of the Faraday cup as ion detection device is then
It is to close rule unification, is not easy to reduce.Therefore, when the diameter of the monitor beam is smaller, the scheme using embodiment one is expected
To the higher monitoring system of ion implantation angle changing sensitivity.However, advantage of this embodiment is that substantially reducing method
The usage quantity for drawing the glass, to reduce equipment cost and maintenance cost.In addition, the bore when the ion detection device is small
When the diameter of the monitor beam, this embodiment scheme is expected to obtain the sensitivity for surmounting one scheme of embodiment.This field skill
Art personnel can be based on above-mentioned commentary, according to practical application request to two kinds of embodiments provided by the present invention carry out accept or reject or
In conjunction with.For example, for the two beam monitor beams that wafer two sides are separated out, reality is respectively adopted in other case study on implementation of the invention
Example one is applied to be monitored with the Faraday cup setting structure in the present embodiment.
Embodiment three
Figure 14 to Figure 15 is please referred to, a kind of ion implantation angle monitoring method and system are present embodiments provided, with implementation
Embodiment provided in example two is compared, difference in this case is that, by optimizing and revising the ion detection device
Detection range, moreover it is possible to be detected to perpendicular to irradiation by the offset of in-plane.
As an example, as shown in figure 14, for a branch of monitor beam 301a, corresponding ion detection device 303 is arranged.It is described
Ion detection device 303 is set on the stationary plane 301b and movable on the stationary plane 301b, by making the ion
Detection device 303 is mobile and detects the monitor beam 301a, with the determination monitor beam 301a on the stationary plane 301b
Irradiation position.The difference is that, the ion detection device 303 is optimized and revised in the present embodiment with embodiment two
Detection range, when the ion detection device 303 being made to be in the position for being able to detect that the monitor beam 301a just, to described
The offset of monitor beam 301a horizontally and vertically can implementing monitoring.Specifically, working as the ion detection device
303 be Faraday cup when, ion detection range can be selected lesser, the method for the monitor beam 301a range of exposures can be corresponded to
The glass is drawn, to realize to the monitor beam 301a in the monitoring both horizontally and vertically deviated.
Specifically, the monitor beam 301a can be detected in wafer unloaded, and determines the standard irradiation
Path.The broad beam ion beam 301 is separated out the monitor beam 301a by the through-hole 302a on baffle 302.Pass through mobile institute
Ion detection device 303 is stated, the position for being able to detect that the monitor beam 201a just is at, and is fixed in the position
It sets, with the determination standard irradiation path.The ion detection device 303 is set on guide rail 303a, and can be led along described
Rail 303a is mobile.Unlike embodiment two, the guide rail 303a itself can also be moved up and down in vertical direction,
And then drive the ion detection device 303 to move in vertical direction, with to the monitor beam 301a in vertical direction
Offset is detected.Identical as embodiment two, the baffle 302 and the covering wafer carrying platform 304 can be tied by transmission
The drive of structure 306 moves up and down.
As an example, being the side view that the irradiation of the broad beam ion beam 301 passes through plane as shown in figure 15.Wherein, real
When being that the wafer 300 carries out ion implanting shown in line, the broad beam ion beam 301 and the monitor beam 301a's is actually implanted into
Angle；It is the standard implant angle for adjusting calibration of the monitor beam 301a shown in dotted line.As can be seen from Figure 15, work as institute
When there is deviation in the implant angle comparison with standard implant angle for stating broad beam ion beam 301, the implant angle of the monitor beam 201a
Also there is deviation, that is to say that the real-time exposure pathways deviate from the standard irradiation path, and no longer by the ion detection
Device 303 is found out.The other parts content of this embodiment scheme, such as offset detection in the horizontal direction, with embodiment
Two is identical, and details are not described herein.In addition, can also use and be set in pairs in embodiment one for the detection that Vertical Square is offset up
The scheme for the Faraday cup set.For single beam monitor beam, a pair of of Faraday cup of detection level direction offset can be respectively set
And a pair of of Faraday cup of detection vertical direction offset, to realize the offset detection on both horizontally and vertically.
In conclusion the present invention provides a kind of ion implantation angle monitoring method and system, the ion implantation angle
Monitoring method includes the following steps: to be separated out monitor beam from the ion beam for wafer ion implanting；The monitor beam is existed
Exposure pathways when unloaded wafer determine the standard irradiation path as standard irradiation path；The monitor beam is being filled
Exposure pathways when load wafer are as real-time exposure pathways, during carrying out ion implanting to the wafer, real-time monitoring
The real-time exposure pathways, and judge whether the real-time exposure pathways deviate the standard irradiation path.The ion implanting
Angle monitoring system includes: ion beam separating modules, for being separated out monitor beam from ion beam used in wafer ion implanting；
Position monitor module is positioned and is monitored for the exposure pathways to the monitor beam.The present invention is by from ion implanting
It is separated out monitor beam in ion beam, during carrying out ion implanting to wafer, the exposure pathways of the monitor beam are carried out
Real-time monitoring is avoided and is led because of ion implantation angle offset so that whether real-time judge ion implantation angle deviates setting value
The drift of the device electric parameter of cause, improves product yield.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (21)
1. a kind of ion implantation angle monitoring method, which comprises the steps of:
Monitor beam is separated out from the ion beam for wafer ion implanting；
Using exposure pathways of the monitor beam in unloaded wafer as standard irradiation path, the standard irradiation road is determined
Diameter；
Using exposure pathways of the monitor beam when loading wafer as real-time exposure pathways, ion note is being carried out to the wafer
During entering, real-time exposure pathways described in real-time monitoring, and judge whether the real-time exposure pathways deviate the standard and shine
Rays diameter.
2. a kind of ion implantation angle monitoring method according to claim 1, which is characterized in that the ion beam includes width
Degree is greater than the broad beam ion beam of diameter wafer, and the method that the monitor beam is separated out from the broad beam ion beam includes: setting
Baffle with through-hole, the through-hole are located at the exposure pathways that the broad beam ion beam width exceeds the diameter wafer part
On, the broad beam ion beam is separated out the monitor beam by the through-hole.
3. a kind of ion implantation angle monitoring method according to claim 2, which is characterized in that determine the standard irradiation
The method in path includes: that a stationary plane is defined on the direction of illumination of the monitor beam, and the stationary plane is perpendicular to the irradiation
Irradiation position of the monitor beam on the stationary plane is detected using ion detection device in direction, and in conjunction with the through-hole
Position determines the standard irradiation path.
4. a kind of ion implantation angle monitoring method according to claim 3, which is characterized in that the ion detection device
It is arranged in pairs on the stationary plane, the orientation of the pairs of ion detection device and the monitor beam have common friendship
Point, the ion detection device is movable along the orientation, and the pairs of ion detection device is from the two of the monitor beam
Respectively close to the monitor beam, being in the ion detection device can't detect the monitor beam and the closest monitoring for side
The position of beam, with irradiation position of the determination monitor beam on the stationary plane.
5. a kind of ion implantation angle monitoring method according to claim 4, which is characterized in that determining the monitor beam
After the irradiation position on the stationary plane, the position of the fixed ion detection device is carrying out ion note to the wafer
During entering, when the ion detection device detects the monitor beam, judge that the real-time exposure pathways have deviateed institute
State standard irradiation path.
6. a kind of ion implantation angle monitoring method according to claim 3, which is characterized in that the ion detection device
Be it is single, be set on the stationary plane and movable on the stationary plane, by keeping the ion detection device mobile and examining
The monitor beam is measured, with irradiation position of the determination monitor beam on the stationary plane.
7. a kind of ion implantation angle monitoring method according to claim 6, which is characterized in that determining the monitor beam
After the irradiation position on the stationary plane, the position of the fixed ion detection device is carrying out ion note to the wafer
During entering, when the ion detection device can't detect the monitor beam, judge that the real-time exposure pathways have deviateed
The standard irradiation path.
8. a kind of ion implantation angle monitoring method according to claim 3, which is characterized in that the ion detection device
Including Faraday cup.
9. a kind of ion implantation angle monitoring method according to claim 3, which is characterized in that the broad beam ion beam exists
There are the part beyond the diameter wafer in the two sides of the wafer, and the through-hole is set to the wafer two sides in pairs, are located at institute
Broad beam ion beam width is stated beyond on the exposure pathways of the diameter wafer part, the broad beam ion beam passes through in pairs described
Through-hole is separated out monitor beam described in two beams, and multiple ion detection devices detect monitor beam described in two beams in the fixation respectively
Irradiation position on face, and the standard irradiation path is determined in conjunction with the position of the through-hole.
10. a kind of ion implantation angle monitoring method according to claim 2, which is characterized in that the through-hole includes narrow
Seam, the width direction of the length direction of the slit perpendicular to the broad beam ion beam.
11. a kind of ion implantation angle monitoring method according to claim 1, which is characterized in that determining the standard
During exposure pathways, by the wafer carrying platform of setting protection baffle covering protection unloaded wafer, the ion is avoided
Beam bombards the wafer carrying platform.
12. a kind of ion implantation angle monitors system characterized by comprising
Ion beam separating modules, for being separated out monitor beam from ion beam used in wafer ion implanting；
Position monitor module is positioned and is monitored for the exposure pathways to the monitor beam.
13. a kind of ion implantation angle according to claim 12 monitors system, which is characterized in that the ion beam includes
Width is greater than the broad beam ion beam of diameter wafer, and the ion beam separating modules include the baffle with through-hole, the through-hole position
In on exposure pathways of the broad beam ion beam width beyond the diameter wafer part.
14. a kind of ion implantation angle according to claim 13 monitors system, which is characterized in that the position monitor mould
Block includes the ion detection device for detecting ion beam, and a stationary plane is defined on the direction of illumination of the monitor beam, described
Stationary plane is set on the stationary plane perpendicular to the direction of illumination, the ion detection device.
15. a kind of ion implantation angle according to claim 14 monitors system, which is characterized in that the ion detection dress
It is set to being set on the stationary plane, the orientation of the pairs of ion detection device and the monitor beam have common friendship
Point, the ion detection device are movable along the orientation.
16. a kind of ion implantation angle according to claim 14 monitors system, which is characterized in that the ion detection dress
It is set to individually, is set on the stationary plane and movable on the stationary plane.
17. a kind of ion implantation angle according to claim 14 monitors system, which is characterized in that the ion detection dress
It sets including Faraday cup.
18. a kind of ion implantation angle according to claim 14 monitors system, which is characterized in that the through-hole is set in pairs
In the wafer two sides, each through-hole is equipped with the corresponding ion detection device.
19. a kind of ion implantation angle according to claim 13 monitors system, which is characterized in that the through-hole includes narrow
Seam, the width direction of the length direction of the slit perpendicular to the broad beam ion beam.
20. a kind of ion implantation angle according to claim 12 monitors system, which is characterized in that the ion beam separates
Module further includes the protection baffle of the wafer carrying platform of covering protection unloaded wafer.
21. a kind of ion implantation angle according to claim 12 monitors system, which is characterized in that the ion implanting angle
Degree monitoring system further includes the deviation warning module for issuing alarm when the exposure pathways of the monitor beam deviate, institute
It states deviation warning module and connects the position monitor module.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040195528A1 (en) * | 2003-04-01 | 2004-10-07 | Reece Ronald N. | Ion beam incident angle detector for ion implant systems |
| CN103000481A (en) * | 2011-09-16 | 2013-03-27 | 台湾积体电路制造股份有限公司 | Apparatus for monitoring ion implantation |
| CN203812850U (en) * | 2014-05-12 | 2014-09-03 | 中芯国际集成电路制造(北京)有限公司 | Ion implantation detection system and ion implanter |
| CN204230207U (en) * | 2014-10-10 | 2015-03-25 | 中芯国际集成电路制造(北京)有限公司 | Ion implantation angle measurement mechanism and ion implant systems |
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2019
- 2019-05-10 CN CN201910388905.3A patent/CN110112083A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040195528A1 (en) * | 2003-04-01 | 2004-10-07 | Reece Ronald N. | Ion beam incident angle detector for ion implant systems |
| CN103000481A (en) * | 2011-09-16 | 2013-03-27 | 台湾积体电路制造股份有限公司 | Apparatus for monitoring ion implantation |
| CN203812850U (en) * | 2014-05-12 | 2014-09-03 | 中芯国际集成电路制造(北京)有限公司 | Ion implantation detection system and ion implanter |
| CN204230207U (en) * | 2014-10-10 | 2015-03-25 | 中芯国际集成电路制造(北京)有限公司 | Ion implantation angle measurement mechanism and ion implant systems |
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Application publication date: 20190809 |