CN110133019A - A multi-purpose sample holder for Nanoprobe-FIB-TEM failure analysis and its application - Google Patents
A multi-purpose sample holder for Nanoprobe-FIB-TEM failure analysis and its application Download PDFInfo
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- 238000004458 analytical method Methods 0.000 title claims abstract description 28
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- 238000012360 testing method Methods 0.000 claims description 18
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical group [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
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- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
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- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
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Abstract
本发明涉及一种用于Nanoprobe‑FIB‑TEM失效分析的多用途样品座，包括：半月形样品台为具有窗口的半圆形硅片，TEM薄片样品固定在该窗口上；基座包括本体、用于安装Nanoprobe样品的第一支柱和用于安装半月形样品台的第二支柱，第一支柱和第二支柱固定连接在本体上，本体具有第一基座贯通孔和第二基座贯通孔；卡座具有第一卡座贯通孔和第二卡座贯通孔；第一卡座贯通孔与第一基座贯通孔或第二基座贯通孔适配，第二卡座贯通孔与FIB样品卡座台适配。本发明还提供上述的多用途样品座的应用。根据本发明的多用途样品座，适用于Nanoprobe、FIB、TEM多仪器，免去了在不同仪器里频繁更换样品台的步骤。
The invention relates to a multi-purpose sample holder for Nanoprobe-FIB-TEM failure analysis, comprising: the half-moon sample stage is a semicircular silicon wafer with a window, and the TEM thin slice sample is fixed on the window; the base includes a body, The first post for installing the Nanoprobe sample and the second post for installing the half-moon sample stage, the first post and the second post are fixedly connected to the body, and the body has a first base through hole and a second base through hole The deck has a first deck through hole and a second deck through hole; the first deck through hole is adapted to the first base through hole or the second base through hole, and the second deck through hole is compatible with the FIB sample Deck table fits. The present invention also provides the application of the above-mentioned multi-purpose sample holder. The multi-purpose sample holder according to the present invention is suitable for Nanoprobe, FIB, and TEM multi-instrument, and avoids the step of frequently changing the sample stage in different instruments.
Description
技术领域technical field
本发明涉及Nanoprobe-FIB-TEM失效分析，更具体地涉及一种用于Nanoprobe-FIB-TEM失效分析的多用途样品座及其应用。The invention relates to Nanoprobe-FIB-TEM failure analysis, more particularly to a multipurpose sample holder for Nanoprobe-FIB-TEM failure analysis and its application.
背景技术Background technique
随着超大规模集成电路的特征尺寸不断缩小，电子元器件的可靠性问题越来越受到重视，相应的器件失效分析需求也越来越迫切。常规失效分析方法是先通过电学测试(EMMI，OBIRCH，TIVA等)进行电路诊断，定位缺陷失效位置；然后通过物理分析(SEM，FIB，TEM等)揭示和表征缺陷，并提出失效根本原因。在这种常规方法中，电学测试是在器件宏观结构上进行故障隔离，根据电信号寻迹来确定失效位置。然而对于器件微观结构缺陷和器件软故障缺陷的失效分析，如MOS管异常输出特性、FET异常输出特性等，需要采用更高分辨率的电学测试手段，例如纳米探针(Nanoprobe)，进行更精准的电学测试和缺陷定位。With the continuous shrinking of the feature size of VLSI, the reliability of electronic components has been paid more and more attention, and the corresponding demand for device failure analysis has become more and more urgent. The conventional failure analysis method is to first conduct circuit diagnosis through electrical testing (EMMI, OBIRCH, TIVA, etc.) to locate the failure location of the defect; then reveal and characterize the defect through physical analysis (SEM, FIB, TEM, etc.), and propose the root cause of the failure. In this conventional method, the electrical test is to isolate the fault on the macroscopic structure of the device, and determine the failure location according to the electrical signal tracing. However, for the failure analysis of device microstructure defects and device soft fault defects, such as MOS tube abnormal output characteristics, FET abnormal output characteristics, etc., it is necessary to use higher-resolution electrical testing methods, such as nanoprobes (Nanoprobe), for more accurate electrical testing and defect location.
在Nanoprobe测试时，根据需求可在样品平面或者侧面方向进行。Nanaoprobe测试完成之后，根据所发现的缺陷，采用FIB(聚焦离子束，Focused Ion beam)技术进行TEM(透射电子显微镜，Transmission electron microscope)样品制备，如TEM平面样品、TEM截面样品。最后进行TEM分析，完成失效分析工作。因此，在整个Nanoprobe-FIB-TEM失效分析过程中，样品要经过的分析步骤较多，且样品在不同的仪器里进行测试和表征时，需要更换不同样品座，如此繁琐的操作过程容易对样品造成损伤。这种外界损伤对样品是不可逆的破损，而往往所进行失效分析的器件样品也是唯一的。During the Nanoprobe test, it can be carried out in the plane or side of the sample according to requirements. After the Nanaoprobe test is completed, according to the found defects, FIB (Focused Ion Beam, Focused Ion beam) technology is used to prepare TEM (Transmission electron microscope) samples, such as TEM planar samples and TEM cross-sectional samples. Finally, TEM analysis is carried out to complete the failure analysis work. Therefore, in the entire Nanoprobe-FIB-TEM failure analysis process, the sample has to go through many analysis steps, and when the sample is tested and characterized in different instruments, different sample holders need to be replaced. Such a cumbersome operation process is easy to damage the sample. cause damage. This kind of external damage is irreversible damage to the sample, and the device sample for failure analysis is often the only one.
发明内容Contents of the invention
为了解决上述现有技术存在的问题，本发明旨在提供一种用于Nanoprobe-FIB-TEM失效分析的多用途样品座及其应用。In order to solve the above-mentioned problems in the prior art, the present invention aims to provide a multi-purpose sample holder for Nanoprobe-FIB-TEM failure analysis and its application.
本发明所述的用于Nanoprobe-FIB-TEM失效分析的多用途样品座，包括：用于安装至TEM样品固定台的半月形样品台，该半月形样品台为具有窗口的半圆形硅片，TEM薄片样品固定在该窗口上；基座，该基座包括本体、用于安装Nanoprobe样品的第一支柱和用于安装半月形样品台的第二支柱，其中，第一支柱和第二支柱固定连接在本体上，本体具有第一基座贯通孔和第二基座贯通孔；用于安装至Nanoprobe样品卡座台和FIB样品卡座台的卡座，该卡座具有第一卡座贯通孔和第二卡座贯通孔；其中，第一卡座贯通孔与第一基座贯通孔或第二基座贯通孔适配以将基座安装固定至卡座，第二卡座贯通孔与FIB样品卡座台适配以将卡座安装固定至FIB样品卡座台。优选地，该TEM薄片样品为TEM平面样品和TEM截面样品。The multi-purpose sample holder for Nanoprobe-FIB-TEM failure analysis of the present invention includes: a half-moon sample stage for installation to a TEM sample fixing table, the half-moon sample stage is a semicircular silicon wafer with a window , the TEM thin section sample is fixed on the window; the base, the base includes a body, a first post for installing a Nanoprobe sample and a second post for installing a half-moon sample stage, wherein the first post and the second post Fixedly connected to the body, the body has a first base through hole and a second base through hole; it is used to install to the deck of the Nanoprobe sample deck and the FIB sample deck, and the deck has a first deck through hole hole and the second card holder through hole; wherein, the first card holder through hole is adapted to the first base through hole or the second base through hole to fix the base to the card holder, and the second card holder through hole is matched with the first base through hole or the second base through hole. The FIB sample holder table is adapted to secure the holder mount to the FIB sample holder table. Preferably, the TEM flake samples are TEM planar samples and TEM cross-sectional samples.
优选地，该本体包括彼此相对的基座顶表面和基座底表面，第一支柱和第二支柱均固定在基座顶表面上，第一基座贯通孔贯穿该基座顶表面和基座底表面；本体还包括彼此相对的前表面和后表面，其均设置于基座顶表面和基座底表面之间并连接基座顶表面和基座底表面，第二基座贯通孔贯穿该前表面和后表面。Preferably, the body includes a base top surface and a base bottom surface opposite to each other, the first support and the second support are fixed on the base top surface, and the first base through hole runs through the base top surface and the base The bottom surface; the body also includes a front surface and a rear surface opposite to each other, which are both arranged between the top surface of the base and the bottom surface of the base and connected to the top surface of the base and the bottom surface of the base, and the second base through hole runs through the base front and back surfaces.
优选地，该卡座包括彼此相对的卡座顶表面和卡座底表面，该卡座顶表面具有用于容纳基座的凹槽。优选地，该卡座还具有第三卡座贯通孔，其与第二卡座贯通孔分别位于凹槽的两侧。Preferably, the card seat includes a card seat top surface and a card seat bottom surface opposite to each other, and the card seat top surface has a groove for accommodating the base. Preferably, the card holder also has a third card holder through hole, which is located on two sides of the groove respectively with the second card holder through hole.
优选地，基座和卡座的材质为铝钛合金。Preferably, the base and the holder are made of aluminum-titanium alloy.
优选地，该半月形样品台的厚度小于200um。Preferably, the thickness of the half-moon sample stage is less than 200um.
优选地，该窗口的尺寸为15um长和10um宽。Preferably, the window has dimensions of 15um long and 10um wide.
本发明还提供上述的多用途样品座的应用，包括：将Nanoprobe样品和半月形样品台分别固定在基座的第一支柱和第二支柱上，将第一基座贯通孔与第一卡座贯通孔对准并将基座安装固定至卡座，然后将卡座直接安装在Nanoprobe样品卡座台上，实现Nanoprobe平面测试；将卡座通过第二卡座贯通孔安装固定至FIB样品卡座台，基于FIB技术实现TEM平面样品制备；从基座上取下Nanoprobe样品和半月形样品台，制备好的TEM平面样品随着半月形样品台直接安装在TEM样品固定台上，实现TEM观测。The present invention also provides the application of the above-mentioned multipurpose sample holder, including: fixing the Nanoprobe sample and the half-moon sample stage on the first pillar and the second pillar of the base respectively, connecting the through hole of the first base with the first deck Align the through holes and install and fix the base to the deck, and then install the deck directly on the Nanoprobe sample deck to realize Nanoprobe flat test; install and fix the deck to the FIB sample deck through the second deck through hole Platform, based on FIB technology to realize TEM planar sample preparation; remove the Nanoprobe sample and half-moon sample stage from the base, and the prepared TEM planar sample is directly installed on the TEM sample fixed stage along with the half-moon sample stage to realize TEM observation.
本发明还提供上述的多用途样品座的应用，包括：将Nanoprobe样品和半月形样品台分别固定在基座的第一支柱和第二支柱上，将第一基座贯通孔与第一卡座贯通孔对准并将基座安装固定至卡座，然后将卡座直接安装在Nanoprobe样品卡座台上，实现Nanoprobe平面测试；将卡座通过第二卡座贯通孔安装固定至FIB样品卡座台，基于FIB技术实现TEM截面样品制备；从基座上取下Nanoprobe样品和半月形样品台，制备好的TEM截面样品随着半月形样品台直接安装在TEM样品固定台上，实现TEM观测。The present invention also provides the application of the above-mentioned multipurpose sample holder, including: fixing the Nanoprobe sample and the half-moon sample stage on the first pillar and the second pillar of the base respectively, connecting the through hole of the first base with the first deck Align the through holes and install and fix the base to the deck, and then install the deck directly on the Nanoprobe sample deck to realize Nanoprobe flat test; install and fix the deck to the FIB sample deck through the second deck through hole Based on the FIB technology, the TEM cross-section sample preparation is realized; the Nanoprobe sample and the half-moon sample stage are removed from the base, and the prepared TEM cross-section sample is directly installed on the TEM sample fixing table along with the half-moon sample stage to realize TEM observation.
本发明还提供上述的多用途样品座的应用，包括：将Nanoprobe样品和半月形样品台分别固定在基座的第一支柱和第二支柱上，将第二基座贯通孔与第一卡座贯通孔对准并将基座安装固定至卡座，然后将卡座直接安装在Nanoprobe样品卡座台上，实现Nanoprobe侧面测试；将卡座通过第二卡座贯通孔安装固定至FIB样品卡座台，基于FIB技术实现TEM截面样品制备；从基座上取下Nanoprobe样品和半月形样品台，制备好的TEM截面样品随着半月形样品台直接安装在TEM样品固定台上，实现TEM观测。The present invention also provides the application of the above-mentioned multipurpose sample holder, comprising: fixing the Nanoprobe sample and the half-moon sample stage on the first pillar and the second pillar of the base respectively, connecting the through hole of the second base with the first deck Align the through holes and fix the base to the deck, and then install the deck directly on the Nanoprobe sample deck to realize Nanoprobe side testing; install and fix the deck to the FIB sample deck through the second deck through hole Based on the FIB technology, the TEM cross-section sample preparation is realized; the Nanoprobe sample and the half-moon sample stage are removed from the base, and the prepared TEM cross-section sample is directly installed on the TEM sample fixing table along with the half-moon sample stage to realize TEM observation.
Nanoprobe样品和半月形样品台分别通过银浆固定在基座的第一支柱和第二支柱上，最后通过丙酮溶液浸泡从基座上取下Nanoprobe样品和半月形样品台The Nanoprobe sample and the half-moon sample stage are respectively fixed on the first and second pillars of the base by silver paste, and finally the Nanoprobe sample and the half-moon sample stage are removed from the base by soaking in acetone solution
根据本发明的多用途样品座，适用于Nanoprobe、FIB、TEM多仪器，免去了在不同仪器里频繁更换样品台的步骤。这种多用途样品台应用于Nanoprobe-FIB-TEM失效分析技术，能更加灵活的实现多维度样品制备和观测能力，更有效的完成器件微观结构缺陷定位-表征-分析的系列工作。The multi-purpose sample holder according to the present invention is suitable for Nanoprobe, FIB, and TEM multi-instruments, and avoids the steps of frequently changing sample stages in different instruments. This multi-purpose sample stage is applied to the Nanoprobe-FIB-TEM failure analysis technology, which can more flexibly realize multi-dimensional sample preparation and observation capabilities, and more effectively complete the series of work of device microstructure defect location-characterization-analysis.
附图说明Description of drawings
图1示出了根据本发明的一个优选实施例的用于Nanoprobe-FIB-TEM失效分析的多用途样品座的半月形样品台的制备流程；Fig. 1 shows the preparation process of the half-moon sample stage of the multipurpose sample holder for Nanoprobe-FIB-TEM failure analysis according to a preferred embodiment of the present invention;
图2是根据本发明的一个优选实施例的用于Nanoprobe-FIB-TEM失效分析的多用途样品座的基座的示意图；Fig. 2 is the schematic diagram of the base of the multi-purpose sample holder that is used for Nanoprobe-FIB-TEM failure analysis according to a preferred embodiment of the present invention;
图3是根据本发明的一个优选实施例的用于Nanoprobe-FIB-TEM失效分析的多用途样品座的卡座的示意图；Fig. 3 is the schematic diagram of the deck of the multipurpose sample holder that is used for Nanoprobe-FIB-TEM failure analysis according to a preferred embodiment of the present invention;
图4示出了根据本发明的一个优选实施例的用于Nanoprobe-FIB-TEM失效分析的多用途样品座的基座和卡座的第一安装状态；Fig. 4 shows the base and the first mounting state of the deck of the multipurpose sample holder for Nanoprobe-FIB-TEM failure analysis according to a preferred embodiment of the present invention;
图5示出了根据本发明的一个优选实施例的用于Nanoprobe-FIB-TEM失效分析的多用途样品座的基座和卡座的第二安装状态；Fig. 5 shows the second installation state of the pedestal and the deck of the multipurpose sample holder for Nanoprobe-FIB-TEM failure analysis according to a preferred embodiment of the present invention;
图6示出了根据本发明的一个优选实施例的用于Nanoprobe-FIB-TEM失效分析的多用途样品座的FIB粗减薄薄片在半月形样品台上的安装状态。Fig. 6 shows the installation state of the rough thinned FIB slices of the multi-purpose sample holder for Nanoprobe-FIB-TEM failure analysis according to a preferred embodiment of the present invention on the half-moon-shaped sample stage.
具体实施方式Detailed ways
下面结合附图，给出本发明的较佳实施例，并予以详细描述。Below in conjunction with the drawings, preferred embodiments of the present invention are given and described in detail.
图1示出了根据本发明的一个优选实施例的用于Nanoprobe-FIB-TEM失效分析的多用途样品座的半月形样品台1的制备流程，具体包括：利用超声仪在硅片上切割出直径3mm的圆形基片11，将基片背面减薄至基片整体厚度为200um，然后沿直径解理，得到半圆形基片12(又被称为半月形基片)，抛光解理面；利用气相沉积法，在半圆形基片12的表面上沉积一层300nm厚度的Si3N4薄膜；在FIB系统里，沿着半圆形基片12的直径，用离子束将基片表面15um长、10um宽区域12a里的Si3N4薄膜层减薄掉，露出下面的硅基体；放入KOH溶液里，露出的硅基体被KOH溶液完全腐蚀掉，形成一个15um长、10um宽的窗口1a，即得到半月形样品台1。Fig. 1 shows the preparation process of the half-moon-shaped sample stage 1 of the multi-purpose sample holder for Nanoprobe-FIB-TEM failure analysis according to a preferred embodiment of the present invention, specifically comprising: utilizing an ultrasonic instrument to cut out For a circular substrate 11 with a diameter of 3mm, the back of the substrate is thinned to an overall thickness of 200um, and then cleaved along the diameter to obtain a semicircular substrate 12 (also known as a half-moon-shaped substrate), which is polished and cleaved surface; Utilize the vapor phase deposition method, on the surface of semicircle substrate 12 deposit the Si 3 N 4 thin film of one deck 300nm thickness; In FIB system, along the diameter of semicircle substrate 12, base The Si 3 N 4 film layer in the 15um long and 10um wide area 12a on the surface of the chip is thinned, exposing the silicon substrate below; put it into the KOH solution, the exposed silicon substrate is completely etched by the KOH solution, forming a 15um long, 10um A wide window 1a, that is, a half-moon-shaped sample stage 1 is obtained.
图2是根据本发明的一个优选实施例的用于Nanoprobe-FIB-TEM失效分析的多用途样品座的基座2的示意图，该基座2包括本体21、用于安装Nanoprobe样品22a的第一支柱22和用于安装半月形样品台1的第二支柱23，其中，第一支柱22和第二支柱23固定连接在本体21上。具体地，本体21包括彼此相对的基座顶表面211和基座底表面212，第一支柱22和第二支柱23均固定在基座顶表面211上，本体21还具有贯穿该基座顶表面211和基座底表面212的第一基座贯通孔21a。本体21还包括彼此相对的前表面213和后表面214，其均设置于基座顶表面211和基座底表面212之间并连接基座顶表面211和基座底表面212，本体21还具有贯穿该前表面213和后表面214的第二基座贯通孔21b。在本实施例中，该基座2的材质为铝钛合金。Fig. 2 is the schematic diagram that is used for the base 2 of the multipurpose sample holder of Nanoprobe-FIB-TEM failure analysis according to a preferred embodiment of the present invention, and this base 2 comprises body 21, is used to install the first of Nanoprobe sample 22a The pillar 22 and the second pillar 23 for installing the half-moon-shaped sample stage 1 , wherein the first pillar 22 and the second pillar 23 are fixedly connected to the body 21 . Specifically, the body 21 includes a base top surface 211 and a base bottom surface 212 opposite to each other, the first pillar 22 and the second pillar 23 are fixed on the base top surface 211, and the body 21 also has a structure extending through the base top surface. 211 and the first base through hole 21a of the base bottom surface 212. The body 21 also includes a front surface 213 and a rear surface 214 opposite to each other, both of which are arranged between the base top surface 211 and the base bottom surface 212 and connect the base top surface 211 and the base bottom surface 212. The body 21 also has The second base through-hole 21 b penetrates the front surface 213 and the rear surface 214 . In this embodiment, the base 2 is made of aluminum-titanium alloy.
图3是根据本发明的一个优选实施例的用于Nanoprobe-FIB-TEM失效分析的多用途样品座的卡座3的示意图，该卡座3包括彼此相对的卡座顶表面31和卡座底表面32，该卡座顶表面31具有用于容纳基座2的凹槽31a。该卡座3具有贯穿凹槽31a的底壁和卡座底表面32的第一卡座贯通孔3a。在凹槽31a的两侧，该卡座3还具有贯穿卡座顶表面31和卡座底表面32的第二卡座贯通孔3b和第三卡座贯通孔3c。在本实施例中，该卡座3的材质为铝钛合金。该第一卡座贯通孔3a可以与第一基座贯通孔21a适配以将基座2安装固定至卡座3，也可以与第二基座贯通孔21b适配以将基座2安装固定至卡座3。该第二卡座贯通孔3b和第三卡座贯通孔3c与FIB样品卡座台适配以将卡座3安装固定至FIB样品卡座台。3 is a schematic diagram of a deck 3 of a multipurpose sample holder for Nanoprobe-FIB-TEM failure analysis according to a preferred embodiment of the present invention, the deck 3 includes a deck top surface 31 and a deck bottom facing each other surface 32 , the top surface 31 of the cartridge has a groove 31 a for receiving the base 2 . The cartridge 3 has a first cartridge through hole 3 a penetrating through the bottom wall of the groove 31 a and the cartridge bottom surface 32 . On both sides of the groove 31 a , the card holder 3 also has a second card holder through hole 3 b and a third card holder through hole 3 c passing through the card holder top surface 31 and the card holder bottom surface 32 . In this embodiment, the card base 3 is made of aluminum-titanium alloy. The first base through hole 3a can be adapted to the first base through hole 21a to install and fix the base 2 to the card base 3, and can also be adapted to the second base through hole 21b to install and fix the base 2 to deck 3. The second holder through hole 3b and the third holder through hole 3c are adapted to the FIB sample holder platform to install and fix the holder 3 to the FIB sample holder platform.
根据本发明的一个优选实施例的用于Nanoprobe-FIB-TEM失效分析的多用途样品座的具体使用方法包括：According to a preferred embodiment of the present invention, the specific method for using the multipurpose sample holder for Nanoprobe-FIB-TEM failure analysis includes:
将Nanoprobe样品22a和半月形样品台1通过银浆分别固定在基座2的第一支柱22和第二支柱23上，如图2所示；The Nanoprobe sample 22a and the half-moon sample stage 1 are respectively fixed on the first pillar 22 and the second pillar 23 of the base 2 by silver paste, as shown in Figure 2;
将基座2的第一基座贯通孔21a与第一卡座贯通孔3a(参见图3)对准并将基座2安装固定至卡座3，然后将卡座3直接安装在Nanoprobe样品卡座台上，可以实现Nanoprobe样品22a的平面方向的测试，如图4所示；和/或将基座2的第二基座贯通孔21b与第一卡座贯通孔3a(参见图3)对准并将基座2安装固定至卡座3，然后将卡座3直接安装在Nanoprobe样品卡座台上，可以实现Nanoprobe样品22a的侧面方向的测试，如图5所示；Align the first base through hole 21a of the base 2 with the first card holder through hole 3a (see Figure 3) and install and fix the base 2 to the card holder 3, and then install the card holder 3 directly on the Nanoprobe sample card On the seat platform, the test of the plane direction of the Nanoprobe sample 22a can be realized, as shown in Figure 4; Align and fix the base 2 to the deck 3, and then install the deck 3 directly on the Nanoprobe sample deck, so that the side direction test of the Nanoprobe sample 22a can be realized, as shown in Figure 5;
在Nanoprobe样品测试完成之后，直接在样品上进行TEM制样过程，即将卡座3通过第二卡座贯通孔3b和第三卡座贯通孔3c(参见图3)安装固定至FIB样品卡座台，将Nanoprobe样品22a进行粗略减薄得到FIB粗减薄薄片，将FIB粗减薄薄片22b从Nanoprobe样品22a中提取出来，黏贴至半月形样品台1的窗口1a处，如图6所示，采用原位制样方法进行FIB精减薄，完成TEM薄片样品制备；After the Nanoprobe sample test is completed, the TEM sample preparation process is directly performed on the sample, that is, the deck 3 is installed and fixed to the FIB sample deck through the second deck through hole 3b and the third deck through hole 3c (see Figure 3). , roughly thinning the Nanoprobe sample 22a to obtain a roughly thinned FIB slice, extracting the roughly thinned FIB slice 22b from the Nanoprobe sample 22a, and sticking it to the window 1a of the half-moon-shaped sample stage 1, as shown in FIG. 6 , The in-situ sample preparation method is used for fine thinning of FIB to complete the preparation of TEM thin section samples;
通过丙酮溶液浸泡，从基座2上取下Nanoprobe样品22a和半月形样品台1，如此，制备好的TEM薄片样品可随着半月形样品台1直接安装在TEM样品固定台上，以实现TEM表征。Take off the Nanoprobe sample 22a and the half-moon sample stage 1 from the base 2 by soaking in acetone solution, so that the prepared TEM thin slice sample can be directly installed on the TEM sample fixing table along with the half-moon sample stage 1 to realize TEM characterization.
如此，当半月形样品台1和基座2，以半月形样品台1的表面法线方向安装时，即第一基座贯通孔21a与第一卡座贯通孔3a重合，锁紧两个螺孔，此时，可进行Nanoprobe平面测试，基于FIB技术的TEM平面样品制备，TEM观测；以及Nanoprobe平面测试，基于FIB技术的TEM截面样品制备，TEM观测。当半月形样品台1和基座2，以垂直于半月形样品台1的表面法线方向安装时，即第二基座贯通孔21b与第一卡座贯通孔3a重合，锁紧两个螺孔，此时，可进行Nanoprobe侧面测试，基于FIB技术的TEM截面样品制备，TEM观测。In this way, when the half-moon-shaped sample stage 1 and the base 2 are installed in the surface normal direction of the half-moon-shaped sample stage 1, that is, the first base through-hole 21a coincides with the first cartridge through-hole 3a, and the two screws are locked tightly. Well, at this time, Nanoprobe plane test, TEM plane sample preparation based on FIB technology, TEM observation; and Nanoprobe plane test, TEM cross-sectional sample preparation based on FIB technology, TEM observation can be performed. When the half-moon-shaped sample stage 1 and the base 2 are installed in a direction perpendicular to the surface normal of the half-moon-shaped sample stage 1, that is, the through-hole 21b of the second base coincides with the through-hole 3a of the first cartridge, and the two screws are locked. Well, at this time, Nanoprobe side testing, TEM section sample preparation based on FIB technology, and TEM observation can be performed.
以上所述的，仅为本发明的较佳实施例，并非用以限定本发明的范围，本发明的上述实施例还可以做出各种变化。即凡是依据本发明申请的权利要求书及说明书内容所作的简单、等效变化与修饰，皆落入本发明专利的权利要求保护范围。本发明未详尽描述的均为常规技术内容。What is described above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Various changes can also be made to the above embodiments of the present invention. That is to say, all simple and equivalent changes and modifications made according to the claims and description of the application for the present invention fall within the protection scope of the claims of the patent of the present invention. What is not described in detail in the present invention is conventional technical content.
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