CN110197688A - A kind of memristor circuit - Google Patents

Abstract

The invention discloses a memristor circuit, which comprises an input module, a single-chip microcomputer module U1, a switch module U2, a resistance network and a hysteresis control module U3. Wherein, the input module is connected with the single-chip microcomputer module U1, and is used to configure the threshold voltage and resistance value of the memristor; the single-chip microcomputer module U1 is connected with the switch module U2, and is used to control the switch module U2 to realize the threshold voltage and resistance value control; the switch module U2 is respectively connected with the input terminal Vin, the single-chip microcomputer module U1 and the resistance network, and is used to realize the selection of different channels of the resistance network according to the control command of the single-chip microcomputer module U1; one end of the resistance network is connected with the switch module U2, The other end is connected with the hysteresis control module U3, which is used to output the resistance of the corresponding resistance value; the hysteresis control module U3 is connected with the resistor network and the ground, and is used for simulating the generation of the bidirectional hysteresis characteristic curve of the memristor.

Description

A memristor circuit

technical field

The invention belongs to the technical field of circuit design, and relates to a memristor circuit, in particular to a hardware analog circuit for realizing the relationship between voltage and current of the memristor.

Background technique

Memristor is a two-terminal passive device used to describe the relationship between magnetic flux and charge. It is a new type of non-linear resistor with memory function. Its resistance is determined by the direction and quantity of charges flowing through it. The amount of electric charge that flows through every moment, thus possessing memory. Due to its ultra-small size, extremely fast erasing speed, ultra-high erasing life, multi-resistive switching characteristics and good CMOS compatibility, memristors are used in non-volatile memories, large-scale integrated circuits, and artificial nerves. Network and artificial intelligence have huge research potential. The advent of memristors has had a huge impact on digital circuits. Therefore, it is particularly important to explore the equivalent model of memristor and apply it to circuit design.

At present, although the equivalent circuit of the memristor has been successfully studied, the overall research is mainly based on the simulation model. Few memristor equivalent circuits composed of hardware circuits are difficult to apply to actual circuits because of their complex principles; or because of large circuit data errors, it is difficult to accurately simulate the actual memristor voltage, current characteristics. Therefore, it will be of great significance to design a simple and accurate memristor equivalent circuit to simulate the actual _TiO2 memristor.

Contents of the invention

Aiming at the problems existing in current technology and research cost, the present invention provides a memristor circuit, which uses relays and peripheral circuits to simulate memristors and realizes controllable threshold and resistance values through single-chip microcomputers, thereby conveniently realizing TiO ₂ memristors. The volt-ampere characteristics of the resistor can replace the actual memristor for experimental testing and application research.

The technical solution adopted by the present invention to solve the technical problems is as follows:

A memristor circuit, comprising an input module, a single-chip microcomputer module U1, a switch module U2, a resistor network, and a hysteresis control module U3, wherein the hysteresis control module U3 further includes a first hysteresis control module U3-1 and a second hysteresis control module U3-1 Back to control module U3-2. The input module is connected with the single-chip microcomputer module U1 for configuring the threshold voltage and resistance value of the memristor; the single-chip microcomputer module U1 is connected with the switch module U2 for controlling the switch module U2 to realize the threshold voltage and resistance value control of the memristor ;The switch module U2 is respectively connected with the input terminal Vin, the single-chip microcomputer module U1 and the resistance network, and is used to realize the selection of different channels of the resistance network according to the control command of the single-chip microcomputer module U1; one end of the resistance network is connected with the switch module U2, and the other end It is connected with the hysteresis control module U3, and is used to output the resistance of the corresponding resistance value; the hysteresis control module U3 is connected with the resistance network and the ground, and is used for simulating the generation of the bidirectional hysteresis characteristic curve of the memristor.

The keys K1 and K2 in the input module are respectively connected to the tenth and eleventh pins of the STC89C51 chip in the single-chip module U1, and the other ends of the keys K1 and K2 are grounded.

The 39th pin, the 38th pin, and the 37th pin of the STC89C51 chip in the single-chip microcomputer module U1 are connected to the 11th pin, the 10th pin, and the 9th pin of the U2 switch module CD4051 respectively; The pins can be connected normally according to the minimum system module of the single chip microcomputer.

The resistor network includes a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, and a ninth resistor R9, all of the above resistors One end is connected to the hysteresis control module U3, and the other end is connected to the switch module U2.

The 16th pin VDD and the 7th pin VEE of the switch module CD4051 chip are respectively connected to the positive and negative power supplies V _CC and -V _CC , the 6th pin and the 8th pin are grounded, and the 3rd pin is connected to the input terminal Vin , the first pin is connected to one end of the sixth resistor R6, the second pin is connected to one end of the eighth resistor R8, the fourth pin is connected to one end of the ninth resistor R9, the fifth pin is connected to the seventh resistor R7 One end is connected, the 12th pin is connected to one end of the fifth resistor R5, the 13th pin is connected to one end of the second resistor R2, the 14th pin is connected to one end of the third resistor R3, the 15th pin is connected to the fourth resistor Connect one end of R4.

The hysteresis control module U3 uses a SRD-5VDC-SL-C relay as the main device; wherein the first hysteresis control module U3-1 circuit also includes a D1 diode 4007, the positive pole of D1 and the other end of the second resistor R2 , the other end of the third resistor R3, the other end of the fourth resistor R4, the other end of the fifth resistor R5, the other end of the sixth resistor R6, the other end of the seventh resistor R7, the other end of the eighth resistor R8, the other end of the The other end of nine resistors R9 is connected, the negative pole of D1 is connected with one end of the first resistor R1 and the 4th pin of the relay, and the other end of the first resistor R1 is connected with the 1st pin of the relay; the second hysteresis control module U3-2 The circuit also includes SRD-5VDC-SL-C and D2 diode 4007, the cathode of D2 is connected to the other end of the second resistor R2, the other end of the third resistor R3, the other end of the fourth resistor R4, and the other end of the fifth resistor R5 One end, the other end of the sixth resistor R6, the other end of the seventh resistor R7, the other end of the eighth resistor R8, and the other end of the ninth resistor R9 are connected, the positive pole of D2 is connected to one end of the eleventh resistor R11, the second end of the relay 4-pin connection, the other end of the eleventh resistor R11 is connected to the first pin of the relay; the second pin and the fifth pin of the relay of the first hysteresis control module U3-1 and the second hysteresis control module U3-2 pin to ground.

Among the above technical solutions, the present invention designs an equivalent analog circuit of a memristor with adjustable threshold voltage and resistance value that can be controlled by a single-chip microcomputer. The analog circuit includes a hysteresis control module, an input module, a CD4051 switch chip, and a single-chip microcomputer chip, and the structure is simple. In the case that a single nanoscale TiO ₂ memristor cannot be obtained at present or even in the future, the actual memristor used to replace it can be used in related circuit design, which is of great significance for the application of memristor characteristics and field research .

Compared with the prior art, the present invention realizes the analog circuit of the memristor, so that the volt-ampere characteristic of the _TiO2 memristor can be realized conveniently, and it can replace the actual memristor for experimental testing and application research. In the present invention, the current of the whole circuit is changed mainly by the process of the relay coil in the hysteresis control module U3 pulling in and releasing the armature to change the contact, and simulating the volt-ampere characteristic of the actual TiO ₂ memristive device. The hysteresis characteristic of the memristor is realized by using the relay and the peripheral circuit, wherein the first hysteresis control module U3-1 and the second hysteresis control module U3-2 mainly realize the acquisition of the positive and negative half-waves of the input signal and the hysteresis generation. The single-chip microcomputer module realizes the control of the switch chip through the input module, and selects different load channels, thereby changing the different resistance values of the memristor model resistors, realizing the effect of changing the threshold value of the memristor, and changing the volt-ampere characteristics of the memristor of the analog circuit.

Description of drawings

Fig. 1 is a block diagram of the circuit structure of the present invention.

Fig. 2 is a schematic diagram of the equivalent analog circuit of the memristor of the present invention.

Fig. 3 is a memristor equivalent analog hardware circuit test diagram of the present invention

Detailed ways

The examples of the present invention will be described in detail below in conjunction with the accompanying drawings.

As shown in FIG. 1 , the functional block diagram of the memristor circuit of the present invention includes an input module, a single-chip microcomputer module U1, a resistor network, a switch module U2 and a hysteresis control module U3. The first hysteresis control module U3-1 and the second hysteresis control module U3-2 in the hysteresis control module U3 cooperate with the load resistance in the resistor network to form a bidirectional hysteresis unit with switching characteristics. The single-chip microcomputer module U1 inputs signals to the single-chip microcomputer through the buttons in the input module, and then acts on the switch chip to adjust the load resistance in the resistor network. The above four modules are common components in the laboratory, which are relatively easy to realize on the hardware circuit, and can realize the threshold and resistance controllable memristor analog circuit with a simple circuit structure.

As shown in Figure 2, it is the circuit principle diagram of the memristor circuit of the present invention, wherein, the buttons K1 and K2 in the input module are respectively connected with the 10th pin and the 11th pin of the STC89C51 chip in the single-chip microcomputer module U1, and the buttons K1, The other end of K2 is grounded.

The 39th, 38th and 37th pins of the STC89C51 chip are respectively connected to the 11th, 10th and 9th pins of the U2 switch module CD4051.

The resistor network includes a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, and a ninth resistor R9. It is connected to the control module U3, and the other end is connected to the switch module U2.

The 16th pin VDD and the 7th pin VEE of the CD4051 chip are connected to the positive and negative power supply V _CC and -V _CC respectively, the 6th pin and the 8th pin are grounded, the 3rd pin is connected to the input terminal Vin, the 1st pin The pin is connected to one end of the sixth resistor R6, the second pin is connected to one end of the eighth resistor R8, the fourth pin is connected to one end of the ninth resistor R9, the fifth pin is connected to one end of the seventh resistor R7, and the second pin is connected to one end of the eighth resistor R8. The 12th pin is connected to one end of the fifth resistor R5, the 13th pin is connected to one end of the second resistor R2, the 14th pin is connected to one end of the third resistor R3, and the 15th pin is connected to one end of the fourth resistor R4 .

The first hysteresis control module U3-1 circuit of the hysteresis control module U3 includes a SRD-5VDC-SL-C type relay, a D1 diode 4007, the positive pole of D1 and the other end of the second resistor R2, and the other end of the third resistor R3 One end, the other end of the fourth resistor R4, the other end of the fifth resistor R5, the other end of the sixth resistor R6, the other end of the seventh resistor R7, the other end of the eighth resistor R8, and the other end of the ninth resistor R9 , the negative pole of D1 is connected to one end of the first resistor R1 and the fourth pin of the relay, and the other end of the first resistor R1 is connected to the first pin of the relay.

The second hysteresis control module U3-2 circuit includes a SRD-5VDC-SL-C type relay, D2 diode 4007, the negative pole of D2 and the other end of the second resistor R2, the other end of the third resistor R3, and the fourth resistor R4. The other end, the other end of the fifth resistor R5, the other end of the sixth resistor R6, the other end of the seventh resistor R7, the other end of the eighth resistor R8, and the other end of the ninth resistor R9 are connected, and the positive pole of D2 is connected to the tenth resistor R9. One end of a resistor R11 is connected to the fourth pin of the relay, and the other end of the eleventh resistor R11 is connected to the first pin of the relay; the first hysteresis control module U3-1 and the second hysteresis control module U3-2 The 2nd and 5th pins of the relay are grounded.

The working principle of the above circuit is as follows:

The first hysteresis control module U3-1 in the hysteresis control module U3 converts the signal input to the fourth pin of the relay into a half-wave sine signal through the diode D1. Driven by the half-wave signal, the relay coil works, and the first resistor R1 passes through the interior of the relay from the first pin to the second pin and then to the ground, and is connected in parallel with the two paths from the 4th pin to the 5th pin and then to the ground. , since the coil resistance of the relay itself is 70 ohms, the overall resistance of the first hysteresis control module U3-1 after parallel connection is about 65 ohms. According to the relay work manual, when the input signal is greater than 3.75V, the electromagnet coil attracts the armature, so that the internal contact of the relay changes, from the original 2nd pin to the 3rd pin, which is the U3-1 unit shown in Figure 2 The internal initial connection between the first pin and the second pin of the relay is changed to the first pin and the third pin, so that the U3-1 unit is changed from the initial parallel circuit to a path that only flows through the coil to the ground . When the input signal is less than 0.5V, the electromagnet coil of the relay cannot firmly attract the armature, so after a very short time, the contacts return to their original positions and the circuit returns to its initial state. The sinusoidal signal with an amplitude of 5V and a frequency of 100HZ is input through the input terminal Vin. The process of the relay coil in the hysteresis control module U3-1 pulling in and releasing the armature to change the contact causes the current of the entire circuit to change, thereby generating positive hysteresis. Back features. If matched with a suitable load resistance, the frequency of the input signal at the input terminal Vin can be increased. The principle of the second hysteresis control module U3-2 is the same as that of the first hysteresis control module U3-1, and will generate reverse hysteresis characteristics under the action of the diode D2.

Fig. 3 (a), (b), (c) are the test result diagrams obtained when the load resistance value in the resistor network gradually increases. Therefore, the value of the load resistance in the resistor network is changed through the control of the single-chip microcomputer to realize the function of adjusting the change of the high and low resistance of the memristor, and at the same time, the effect of changing the threshold value can also be achieved. On the basis of this module, if the 4th pin of the relay is connected to a certain adjustable resistance value, the adjustment effect can still be achieved.

The single-chip microcomputer module U1 and the switch module U2 play a role in adjusting the threshold value and the resistance value of the memristor in the whole circuit. The 39th pin, 38th pin, and 37th pin of the STC89C51 chip are respectively connected to the 11th pin, the 10th pin, and the 9th pin of the CD4051 switch chip. Next, select the channel of the CD4051 switch chip through the 39th pin, the 38th pin, and the 37th pin to adjust the load resistance value of the connected circuit in the resistor network. When the load resistance changes, the current of the overall circuit and the voltage of the hysteresis module will change, thereby affecting the hysteresis characteristics of the relay module, and realizing the effect of adjustable threshold voltage and resistance value on the overall circuit. The 16th pin V _CC and the 7th pin -V _CC of the switch chip CD4051 respectively input voltages of 5V and -5V at this time, but the values of the input voltages -V _CC and V _CC are also affected by the 3rd pin Out/In of the CD4051 chip. The input signal voltage control, that is, the input voltage of the 16th pin V _CC and the 7th pin -V _CC must be greater than or equal to the amplitude voltage of the input signal.

Those of ordinary skill in the art should recognize that the above embodiments are only used to verify the present invention, rather than as a limitation of the present invention, as long as they are within the scope of the present invention, changes and deformations to the above embodiments will fall within the scope of the present invention. Within the protection scope of the present invention.

Claims (5)

1. a kind of memristor circuit, which is characterized in that including input module, one-chip computer module U1, switch module U2, resistance net Network, hysteresis control module U3, wherein hysteresis control module U3 further comprises the first hysteresis control module U3-1 and the second hysteresis Control module U3-2；Input module is connected with one-chip computer module U1, for configuring the threshold voltage and resistance value of memristor；Monolithic Machine module U1 is connected with switch module U2, and threshold voltage and the resistance value control of memristor are realized for control switch module U2 System；Switch module U2 is connected with input terminal Vin, one-chip computer module U1 and resistor network respectively, for according to one-chip computer module The control instruction of U1 realizes the selection to resistor network difference channel；One end of resistor network is connected with switch module U2, The other end is connected with hysteresis control module U3, for the resistance according to the state output respective resistance values of switch module U2；Hysteresis Control module U3 and resistor network and connect, for simulating the generation of the two-way hysteretic characteristic curve of memristor；

Hysteresis control module U3 is realized using relay.

2. memristor circuit according to claim 1, which is characterized in that hysteresis control module U3 uses SRD-5VDC-SL-C Type relay.

3. memristor circuit according to claim 1, which is characterized in that one-chip computer module U1 uses STC89C51 chip.

4. memristor circuit according to claim 1, which is characterized in that U2 switch module uses CD4051 chip.

5. memristor circuit according to claim 1, which is characterized in that key K1, K2 in input module respectively with monolithic 10th pin of STC89C51 chip, the connection of the 11st pin in machine module U1, the other end ground connection of key K1, K2；

39th pin of STC89C51 chip, the 38th pin, the 37th pin respectively with the 11st pin of U2 switch module CD4051, 10th pin, the 9th pin are connected；

Resistor network includes second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th electricity R7, the 8th resistance R8, the 9th resistance R9 are hindered, one end of all of above resistance is connected with hysteresis control module U3, other end access Switch module U2；

16th pin VDD of CD4051 chip and the 7th pin VEE are respectively connected to positive-negative power V_CCWith-V_CC, the 6th pin, the 8th are drawn Foot ground connection, the 3rd pin meets input terminal Vin, and the 1st pin is connect with one end of the 6th resistance R6, the 2nd pin and the 8th resistance R8's One end connection, the 4th pin are connect with one end of the 9th resistance R9, and the 5th pin is connect with one end of the 7th resistance R7, the 12nd pin It is connect with one end of the 5th resistance R5, the 13rd pin is connect with one end of second resistance R2, and the 14th pin is with 3rd resistor R3's One end connection, the 15th pin are connect with one end of the 4th resistance R4；

It include SRD-5VDC-SL-C type relay, D1 diode 4007, the anode of D1 in first hysteresis control module U3-1 circuit With the other end of second resistance R2, the other end of 3rd resistor R3, the other end of the 4th resistance R4, the 5th resistance R5 it is another End, the other end of the 6th resistance R6, the other end of the 7th resistance R7, the other end of the 8th resistance R8, the 9th resistance R9 it is another End connection, the cathode of D1 are connect with one end of first resistor R1, the 4th pin of relay, the other end and relay of first resistor R1 The connection of the 1st pin of device；

Second hysteresis control module U3-2 circuit includes SRD-5VDC-SL-C type relay, D2 diode 4007, the cathode of D2 with The other end of second resistance R2, the other end of 3rd resistor R3, the other end of the 4th resistance R4, the 5th resistance R5 the other end, The other end of 6th resistance R6, the other end of the 7th resistance R7, the other end of the 8th resistance R8, the 9th resistance R9 the other end connect Connect, D2 anode connect with the 4th pin of one end of eleventh resistor R11, relay, the other end of eleventh resistor R11 and 1st pin of relay connects；The relay the 2nd of first hysteresis control module U3-1 and the second hysteresis control module U3-2 draw Foot, the 5th pin ground connection.