CN110289212A - The method and apparatus of thicknesses of layers is accurately controlled in etch process - Google Patents
The method and apparatus of thicknesses of layers is accurately controlled in etch process Download PDFInfo
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- CN110289212A CN110289212A CN201910584723.3A CN201910584723A CN110289212A CN 110289212 A CN110289212 A CN 110289212A CN 201910584723 A CN201910584723 A CN 201910584723A CN 110289212 A CN110289212 A CN 110289212A
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- thicknesses
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- specific gravity
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- 238000000034 method Methods 0.000 title claims abstract description 65
- 230000008569 process Effects 0.000 title claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 89
- 230000005484 gravity Effects 0.000 claims abstract description 43
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 238000011897 real-time detection Methods 0.000 claims abstract description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 76
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 38
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 5
- 230000003628 erosive effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 35
- 238000001514 detection method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
Abstract
The invention is related to accurately controlling the method and apparatus of thicknesses of layers in a kind of etch process, wherein accurately controlling the method for thicknesses of layers in the etch process the following steps are included: measuring the thicknesses of layers of wafer to be etched；The wafer is put into etching solution；Real-time detection etching solution specific gravity, and etching duration is determined according to the real-time specific gravity of etching solution, to reach the etched thickness requirement to film layer.The method and apparatus that thicknesses of layers is accurately controlled in etch process of the invention passes through the specific gravity of real-time detection solution, to determine specific etching duration, the process time is modified in real time, etch quantity is precisely controlled to reach, when preventing from being etched more batches of wafers, there is biggish thicknesses of layers difference after crystal round etching between different batches, promote process capability.
Description
Technical field
The present invention relates to wafer productions to manufacture processing equipment field, and in particular to accurately controls film layer in a kind of etch process
The method and apparatus of thickness.
Background technique
In semiconductor fabrication process, it is often necessary to be etched to the film layer of crystal column surface.During etching, warp
The different situation of thicknesses of layers, the processing for having seriously affected board are good after the normal crystal round etching that will appear between different batches
Rate.
Summary of the invention
The purpose of the present invention is to provide the method and apparatus that thicknesses of layers is accurately controlled in a kind of etch process, Neng Goushi
When detect etching solution specific gravity, after being etched the film layer of the wafer of different batches have consistency of thickness, improve processing procedure work
Skill is horizontal.
In order to solve the above technical problems, the following provide a kind of method for accurately controlling thicknesses of layers in etch process, packet
It includes following steps: measuring the thicknesses of layers of wafer to be etched；The wafer is put into etching solution；Real-time detection etching solution
Specific gravity, and etching duration is determined according to the real-time specific gravity of etching solution, to reach the etched thickness requirement to film layer.
Optionally, at least two wafers are put into phosphoric acid solution and are etched reaction, and measure the film of wafer to be etched
It is further comprising the steps of when thickness is spent: the consistent wafer of thicknesses of layers is classified as one kind.
Optionally, of a sort wafer will be classified as and is put into etching solution.
Optionally, film layer to be etched is silicon nitride layer, when measuring the thicknesses of layers of wafer to be etched, including following step
It is rapid: to measure the silicon nitride layer thickness of the crystal column surface；Measure the oxide layer thicknesses of crystal column surface.
Optionally, further comprising the steps of before the wafer being put into etching solution: to obtain the etching solution of etching
Initial specific gravity.
Optionally, further comprising the steps of: according to the etching solution of default etched thickness and etching to film layer
Initial specific gravity determines initial etch duration.
Optionally, according to the real-time specific gravity of etching solution and the difference of initial specific gravity, real time etch duration and just is calculated
The difference for the etching duration that begins etches duration so as to adjust residue.
Optionally, the etching solution is phosphoric acid solution, molten to detect phosphoric acid by the relative density for detecting phosphoric acid solution
The specific gravity of liquid.
In order to overcome the above technical problems, setting for thicknesses of layers is accurately controlled in a kind of etch process also provided below
It is standby, comprising: densimeter is arranged into the liquid tank for being loaded with etching solution, the specific gravity for real-time detection etching solution；Control
Device is connected to the densimeter, for the etching period according to the etching solution specific gravity control wafer detected, to reach to film
The etched thickness requirement of layer.
Optionally, the etching solution be phosphoric acid solution, the densimeter by detect phosphoric acid solution relative density come
Detect the specific gravity of phosphoric acid solution.
The method and apparatus that thicknesses of layers is accurately controlled in etch process of the invention passes through the specific gravity of real-time detection solution,
It determines specific etching duration, the process time is modified in real time, etch quantity is precisely controlled to reach, prevent pair
When more batches of wafers are etched, there is biggish thicknesses of layers difference after the crystal round etching between different batches, promotes process capability.
Detailed description of the invention
Fig. 1 be a kind of specific embodiment of the invention in etch process in accurately control thicknesses of layers method step
Rapid schematic diagram.
Fig. 2 is schematic diagram of the phosphoric acid solution to the etch-rate of silicon nitride layer of different volumes score.
Specific embodiment
The study found that causing the wafers of different batches in the etching process different reason of thicknesses of layers after the etching, it is
The loss of etching solution in etching process.Such as when using the silicon nitride layer of phosphoric acid solution etching crystal column surface, due to using
150 DEG C to 200 DEG C of hot phosphoric acid solution, the moisture in high temperature phosphoric acid solution easily evaporates, therefore with the progress of reaction, etching
Rate can gradually decrease.Use silicon nitride film as STI (shallow trench isolation) etching, polysilicon etch barrier layer when,
Large effect, the oxygen of the crystal column surface after the etching that different batches are got can be caused to the oxide skin(coating) below silicon nitride layer
There are larger differences for the thickness of compound layer, affect greatly to subsequent ion implantation technology.
Below in conjunction with the drawings and specific embodiments to accurately controlling film layer thickness in a kind of etch process proposed by the present invention
The method and apparatus of degree is described in further detail.
Referring to Fig. 1, accurately to control thicknesses of layers in the etch process in a kind of specific embodiment of the invention
The step schematic diagram figure of method.
In this specific embodiment, a kind of method that thicknesses of layers is accurately controlled in etch process is provided, including with
Lower step: S11 measures the thicknesses of layers of wafer to be etched；The wafer is put into etching solution by S12；The erosion of S13 real-time detection
Etching solution specific gravity, and etching duration is determined according to the real-time specific gravity of etching solution, to reach the etched thickness requirement to film layer.
The method that thicknesses of layers is accurately controlled in etch process in the specific embodiment passes through real-time detection solution
Specific gravity is in real time modified the process time, is precisely controlled to reach to etch quantity to determine specific etching duration,
When preventing from being etched more batches of wafers, there is biggish thicknesses of layers difference after the crystal round etching between different batches, promotes system
Cheng Nengli.
In a specific embodiment, at least two wafers are put into etching solution and are etched reaction, and measure to
It is further comprising the steps of when the thicknesses of layers of the wafer of etching: the consistent wafer of thicknesses of layers is classified as one kind.
This is because, the number for being once put into the wafer that etching solution is etched is greater than equal to two, if each
The thicknesses of layers of wafer is inconsistent, and after the etching reaction that each wafer has carried out the same duration, the thicknesses of layers of acquisition can be different
It causes, this makes the wafer between same batch affect process capability there is also the difference in thickness of film layer.
Therefore, in a specific embodiment, of a sort wafer will be classified as and is put into etching solution.In this way, same
The film thickness difference of the wafer of batch is controlled to minimum.In fact, in this way, the film thickness difference of the wafer of different batches
It can also reduce.
In fact, the number for being once put into the wafer that etching solution is etched is also possible to one.
In a specific embodiment, film layer to be etched is silicon nitride layer, and the film layer for measuring wafer to be etched is thick
When spending, comprising the following steps: measure the silicon nitride layer thickness of the crystal column surface；Measure the oxide layer thicknesses of crystal column surface.
In this specific embodiment, the silicon nitride layer of crystal column surface is etched using hot phosphoric acid solution (150 DEG C to 200 DEG C),
Barrier layer to expose the oxide skin(coating) below silicon nitride layer, as ion implanting.It, also can be direct if oxide layer thicknesses are uneven
The precision of ion implantation technology is influenced, the success rate of the making devices in matrix silicon is influenced.Since hot phosphoric acid solution not only can
Etches both silicon nitride layer can also etch the silicon oxide layer, therefore, when calculating the etching duration to the film layer of wafer, need to join
Examine the two values.
In a specific embodiment, further comprising the steps of: according to the default etched thickness of film layer and etching
The initial specific gravity of etching solution determines initial etch duration.In this specific embodiment, to the etching requirement of film layer
It is the oxide skin(coating) for being etched silicon nitride totally, while retaining the first preset thickness.
In this specific embodiment, it is wet to can also be used to triggering realization phosphoric acid solution for a determining initial etch duration
The board of method etch process makes the board start to be measured in real time the specific gravity of phosphoric acid solution, convenient for control.
It is in a specific embodiment, very big to silicon nitride and to the etch-rate ratio of oxide due to phosphoric acid solution,
Therefore, in fact, the silicon nitride layer thickness can also be detected only, without the thickness of the detection oxide skin(coating), only by the nitrogen
Change the relationship of silicon layer thickness, the real-time specific gravity of phosphoric acid solution and etch-rate to determine etching duration.
Specifically, etching thickness of the duration equal to silicon nitride layer divided by phosphoric acid to the etch-rate of the silicon nitride layer.One
In kind of specific embodiment, when real-time detection phosphoric acid solution specific gravity, a time difference d is had between detection twice.A kind of specific
In embodiment, the time difference d twice between detection is smaller, and it is higher to finally obtain etching precision.
In this specific embodiment, the phosphoric acid solution of different specific weight can refer to Fig. 2 to the etch-rate of silicon nitride, be
Schematic diagram of the phosphoric acid solution of different volumes score to the etch-rate of silicon nitride layer.
In a specific embodiment, if obtaining initial etch duration when etching and starting, then, it is subsequent in progress
Detection phosphoric acid solution specific gravity during, need to feed back a correction value β, constantly to correct etching of the phosphoric acid solution to silicon nitride
Duration makes it possible to get required silicon nitride film layer thickness.In a specific embodiment, correction value β can be by elder generation
It is obtained into technology controlling and process (APC) system-computed.
Since etching duration is the specific gravity real-time change of the phosphoric acid solution arrived according to real-time detection, it is thereby achieved that
The unification of the superficial film thickness of the crystal round etching of multiple batches of progress.
In a specific embodiment, according to the real-time specific gravity of etching solution and the difference of initial specific gravity, reality is calculated
When etch the difference of duration and initial etch duration, so as to adjust remaining etching duration.The real time etch duration and initial erosion
The difference for carving duration is the correction value β.
In a specific embodiment, the etching solution is phosphoric acid solution, passes through the relatively close of detection phosphoric acid solution
It spends to detect the specific gravity of phosphoric acid solution.Here what is selected is densimeter to measure the specific gravity of the phosphoric acid solution, in fact, can also
To select densimeter as the equipment of detection phosphoric acid solution specific gravity, densimeter can detect any one in each ingredient in solution
The concentration of ingredient, but densimeter specific concentration meter is cheaply very much.
In order to solve the above technical problems, the equipment that thicknesses of layers is accurately controlled in a kind of etch process also provided below,
It include: densimeter, the specific gravity in setting to the liquid tank for being loaded with etching solution, for real-time detection etching solution；Controller,
It is connected to the densimeter, for the etching period according to the etching solution specific gravity control wafer detected, to reach to film layer
Etched thickness requirement.
The equipment that thicknesses of layers is accurately controlled in etch process in the specific embodiment can be real-time by densimeter
The specific gravity of solution is detected, to determine specific etching duration, the process time is modified in real time, to reach to etch quantity
It is precisely controlled, when preventing from being etched more batches of wafers, the film layer on wafer between different batches surface after the etching has larger
Difference in thickness, promoted process capability.
In a specific embodiment, etching solution described in the densimeter is phosphoric acid solution, molten by detection phosphoric acid
The relative density of liquid detects the specific gravity of phosphoric acid solution.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. accurately controlling the method for thicknesses of layers in a kind of etch process, comprising:
Measure the thicknesses of layers of wafer to be etched；
The wafer is put into etching solution；
Real-time detection etching solution specific gravity, and etching duration is determined according to the real-time specific gravity of etching solution, to reach to film layer
Etched thickness requirement.
2. accurately controlling the method for thicknesses of layers in etch process according to claim 1, which is characterized in that will at least two
A wafer is put into etching solution and is etched reaction, and when measuring the thicknesses of layers of wafer to be etched, further comprising the steps of:
The consistent wafer of thicknesses of layers is classified as one kind.
3. accurately controlling the method for thicknesses of layers in etch process according to claim 2, which is characterized in that will be classified as
Of a sort wafer is put into etching solution.
4. accurately controlling the method for thicknesses of layers in etch process according to claim 1, which is characterized in that be etched
Film layer is silicon nitride layer, when measuring the thicknesses of layers of wafer to be etched, comprising the following steps:
Measure the silicon nitride layer thickness of the crystal column surface；
Measure the oxide layer thicknesses of crystal column surface.
5. accurately controlling the method for thicknesses of layers in etch process according to claim 1, which is characterized in that by the crystalline substance
Circle is put into before etching solution, further comprising the steps of:
Obtain the initial specific gravity of the etching solution of etching.
6. accurately controlling the method for thicknesses of layers in etch process according to claim 5, which is characterized in that further include with
Lower step:
According to the initial specific gravity of the etching solution of default etched thickness and etching to film layer, initial etch duration is determined.
7. accurately controlling the method for thicknesses of layers in etch process according to claim 6, which is characterized in that according to etching
The real-time specific gravity of solution and the difference of initial specific gravity, calculate the difference of real time etch duration Yu initial etch duration, to adjust
Whole remaining etching duration.
8. accurately controlling the method for thicknesses of layers in etch process according to claim 1, which is characterized in that the etching
Solution is phosphoric acid solution, detects the specific gravity of phosphoric acid solution by detecting the relative density of phosphoric acid solution.
9. accurately controlling the equipment of thicknesses of layers in a kind of etch process characterized by comprising
Densimeter, is arranged into the liquid tank for being loaded with etching solution, the specific gravity for real-time detection etching solution；
Controller is connected to the densimeter, for according to the etching period of etching solution specific gravity control wafer detected, with
Reach the etched thickness requirement to film layer.
10. accurately controlling the equipment of thicknesses of layers in etch process according to claim 9, which is characterized in that the erosion
Etching solution is phosphoric acid solution, and the densimeter detects the specific gravity of phosphoric acid solution by detecting the relative density of phosphoric acid solution.
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| Application Number | Priority Date | Filing Date | Title |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240120208A1 (en) * | 2022-10-10 | 2024-04-11 | United Microelectronics Corp. | Method for fabricating spacer |
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Application publication date: 20190927 |