CN110316693B - Method for regulating micro-nano electromechanical switch through local external stress - Google Patents
Method for regulating micro-nano electromechanical switch through local external stress Download PDFInfo
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Abstract
本发明将一对局部拉伸压缩应力作用在一根氧化锌压电半导体纳米纤维上，改变局部应力的大小来改变氧化锌压电半导体纳米纤维的伏安特性，实现通过局部应力来调控其电流是否导通以及导通电流大小。表现为：当外加电压幅值低于第一个电压临界值时，无论外加电压正负，任何一个方向的电流都不能通过纤维；当外加电压幅值高于第一个电压临界值且低于电压第二个临界值时，电流向一个方向流动，但不能向另一个方向流动；当外加电压幅值高于第二临界值时，电流双向流动；且局部应力大小对上述两个电压临界值大小的影响显著。局部应力就像一个开关，在给定电压幅值的情况下，决定氧化锌压电半导体纤维在一个或两个方向上是否导通电流以及导通电流的大小。
In the invention, a pair of local tensile and compressive stresses act on a zinc oxide piezoelectric semiconductor nanofiber, the magnitude of the local stress is changed to change the voltammetric characteristics of the zinc oxide piezoelectric semiconductor nanofiber, and the current of the zinc oxide piezoelectric semiconductor nanofiber can be regulated by the local stress. Whether it is turned on and the size of the conduction current. The performance is as follows: when the amplitude of the applied voltage is lower than the first voltage critical value, no matter whether the applied voltage is positive or negative, current in any direction cannot pass through the fiber; when the applied voltage amplitude is higher than the first voltage critical value and lower than When the voltage is at the second critical value, the current flows in one direction, but cannot flow in the other direction; when the amplitude of the applied voltage is higher than the second critical value, the current flows in both directions; and the magnitude of the local stress is affected by the above two voltage critical values. The effect of size is significant. The local stress acts like a switch, determining whether and how much the zinc oxide piezoelectric semiconductor fiber conducts current in one or two directions, given the magnitude of the voltage.
Description
The technical field is as follows:
the invention relates to a method for regulating and controlling a micro-nano electromechanical switch through local external stress, belonging to the field of micro-nano devices.
Background art:
with the continuous progress of microelectronic technology, the integration density of devices on a single chip is higher and higher, and miniaturization are gradually becoming the development trend of hardware on the premise of realizing the same function. Therefore, the research of micro-nano devices has become the leading edge and hot spot at present.
In order to meet the development requirements of device miniaturization, in recent years, many scientific fields related to nanometer, such as nanomedicine, nanobiology, nanoelectronics, and the like, have achieved a number of important achievements. Micro-nano devices are widely applied in many important scientific and technological fields, such as communication field, aerospace field and many material fields. In 2009, a famous journal of technical review of the institute of technology of the Massachusetts institute of technology, USA, evaluated micro-nano devices based on piezoelectricity electronics as a theoretical basis as one of ten emerging technologies. In recent years, the research on zinc oxide nano-structures by a plurality of researchers has achieved a plurality of systematic and pioneering research results. These achievements will have important applications in the fields of sensors, human-silicon based technology interfaces, micro-electromechanical systems, nano-robots, active electronic flexible devices, etc.
The invention content is as follows:
the invention provides a method for regulating and controlling a micro-nano electromechanical switch by local external stress, which aims to solve the problems in the prior art and can control the current on the zinc oxide piezoelectric semiconductor fiber to be bidirectional conduction, unidirectional conduction or bidirectional non-conduction and the magnitude of conduction current by changing the magnitude of the local stress.
The technical scheme adopted by the invention is as follows: a method for regulating and controlling a micro-nano electromechanical switch by local external stress comprises the steps of applying a pair of local tensile or compressive stresses to an N-type zinc oxide piezoelectric semiconductor nanofiber;
the N-type zinc oxide piezoelectric semiconductor nanofiber meets the equation of motion of the piezoelectric semiconductor phenomenological theory:
where T is the stress tensor, f is the physical vector, ρ mass density, and u isA mechanical displacement vector, D an electron displacement vector, q a basic charge amount, p and n concentrations of holes and electrons,
and
is the impurity concentration of the donor and acceptor,
and
the current densities of holes and electrons, respectively.
Further, the N-type zinc oxide piezoelectric semiconductor nanofibers also satisfy the piezoelectric semiconductor phenomenological theory constitutive equation:
where S is the strain tensor, e is the electric field vector,
is the elastic compliance constant, dkijIs the piezoelectric constant of the piezoelectric element,
is a dielectric constant of the glass to be used,
and
it is the mobility of the carriers that are,
and
diffusion of charge carriersA constant.
Further, the strain tensor S, the displacement vector u, the electric field intensity E and the electric potential of the N-type zinc oxide piezoelectric semiconductor nano-fiber
The following relation is also satisfied:
further, the boundary condition of the N-type zinc oxide piezoelectric semiconductor nanofiber at the left end x ═ L is as follows: the displacement u (-L) is 0 and the electron concentration n is 1021Electric potential of
The boundary conditions at the right end x-L are: stress T is 0 and electron concentration n is 1021Electric potential of
Further, the length 2a of the loading region of the local tensile or compressive stress is much smaller than the total length 2L of the N-type zinc oxide piezoelectric semiconductor fiber.
Further, when V is 0, the N-type zinc oxide piezoelectric semiconductor fiber may generate a potential well/barrier in a local loading region and its vicinity due to the application of local stress; when the local stress magnitude is small, the potential well/barrier exhibits near antisymmetry with respect to the center of the loading region, and when the local stress magnitude is increased, the antisymmetry of the potential well/barrier is broken, so that two voltage thresholds occur.
Further, at a given local stress: when the amplitude of the external voltage V is lower than a first voltage critical value, a potential well/potential barrier generated by local stress can prevent current in two directions from passing through the zinc oxide piezoelectric semiconductor nano-fiber; when the amplitude of the applied voltage is higher than a first voltage critical value and lower than a second voltage critical value, the potential well/potential barrier only prevents the current in one direction and allows the current in the other direction to pass through the zinc oxide piezoelectric semiconductor nano-fiber; when the amplitude of the applied voltage is higher than a second critical value, current in two directions can pass through the zinc oxide piezoelectric semiconductor nano-fiber.
The invention has the following beneficial effects: the invention has simple structure and easy realization. Under the condition of a given external voltage amplitude, the micro-nano electromechanical switch can determine whether the current on the zinc oxide piezoelectric semiconductor fiber is in bidirectional conduction, unidirectional conduction or both-way non-conduction and the magnitude of the conduction current by changing the magnitude of local external stress, and a means is provided for mechanically controlling the electrical behavior of the micro-nano device.
Description of the drawings:
FIG. 1 is a schematic structural diagram of an embodiment of a method for controlling a micro-nano electromechanical switch by local loading stress according to the present invention.
Fig. 2a is a schematic diagram of the distribution of the potential phi along the zinc oxide nanofibers under the action of the voltage V equal to 0V (V) and different given local stresses F according to the embodiment of the present invention.
Fig. 2b is a schematic diagram of the distribution of the potential phi along the zinc oxide nanofibers under the action of a given local stress F of 300nN (nanonewton) and different given applied voltages V according to the embodiment of the present invention.
Fig. 3 is a schematic view of a current-voltage characteristic curve under different given local stresses F according to an embodiment of the present invention.
The specific implementation mode is as follows:
the invention relates to a method for regulating a micro-nano electromechanical switch by local external stress, which mainly relates to the application of a pair of local tensile or compressive stress on an N-type zinc oxide piezoelectric semiconductor nanofiber. Wherein the N-type zinc oxide piezoelectric semiconductor fiber satisfies the equation of motion of the piezoelectric semiconductor phenomenological theory:
where T is the stress tensor, f is the physical vector, ρ mass density, u is the mechanical displacement vector, D is the electronic displacement vector, and q represents the elementary chargeThe charge amount, p and n are the concentrations of holes and electrons,
and
is the impurity concentration of the donor and acceptor,
and
the current densities of holes and electrons, respectively. (1)1Is equation of motion (Newton's law), (1)2Is the charge equation of electrostatics (Gauss's law), (1)3And (1)4The charge conservation equations for holes and electrons, respectively.
Wherein the N-type zinc oxide piezoelectric semiconductor fiber also satisfies the piezoelectric semiconductor phenomenological theory constitutive equation:
where S is the strain tensor, e is the electric field vector,
is the elastic compliance constant, dkijIs the piezoelectric constant of the piezoelectric element,
is a dielectric constant of the glass to be used,
and
it is the mobility of the carriers that are,
and
carrier diffusion constant. (2)1And (2)2Is the constitutive relation commonly used for piezoelectric materials, (2)3And (2)4It is used for hole current and electron current including drift current under the action of electric field and diffusion current caused by carrier concentration gradient.
Wherein the strain tensor S, the displacement vector u, the electric field intensity E and the electric potential of the N-type zinc oxide piezoelectric semiconductor fiber
The following relation is also satisfied:
the boundary condition of the N-type zinc oxide piezoelectric semiconductor fiber at the position where x is-L at the left end is as follows: the displacement u (-L) ═ 0; electron concentration n is 1021(ii) a Electric potential
The boundary conditions at the right end x-L are: stress T ═ 0; electron concentration n is 1021(ii) a Electric potential
The length 2a of the loading area of one pair of local tensile (compressive) stresses is far less than the total length 2L of the N-type zinc oxide piezoelectric semiconductor fiber.
When V is 0, the zinc oxide piezoelectric semiconductor fiber generates a potential well/barrier in a local loading area and the vicinity thereof due to the application of local stress. When the local stress amplitude is small, the potential well/potential barrier presents approximate antisymmetry relative to the center of the loading region; when the local stress magnitude is gradually increased, the antisymmetry of the potential well/barrier is gradually destroyed due to the influence of the nonlinear effect, so that two voltage thresholds appear.
Wherein at a given local stress: when the amplitude of the applied voltage V is lower than a first voltage critical value, the current in any direction can not flow through the zinc oxide piezoelectric semiconductor fiber; when the amplitude of the applied voltage V is larger than a first voltage critical value and smaller than a second voltage critical value, the current can flow towards one direction of the zinc oxide piezoelectric semiconductor fiber, but cannot flow towards the other direction if the sign of the voltage changes; when the magnitude of the applied voltage V exceeds a second voltage threshold, the sign of the voltage changes and current can flow in both directions.
Wherein the magnitude of the local stress has a significant influence on the magnitude of two voltage thresholds of the micro-nano electromechanical switch. The larger the local stress value is, the larger the two voltage critical values are, but the simple linear relation is not presented
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
In the embodiment of the method for controlling the micro-nano electromechanical switch by local applied stress, the structural schematic diagram is shown in fig. 1. In fig. 1, the micro-nano electromechanical switch is an N-type zinc oxide piezoelectric semiconductor nanofiber with a local tensile stress F applied in the middle. The N-type zinc oxide piezoelectric semiconductor fiber comprises the following geometrical parameters: the total fiber length is 2L-60 μm; the fiber radius R is 0.02875 μm; the local stress loading zone length 2a is 1.2 μm; the boundary condition of the N-type zinc oxide piezoelectric semiconductor fiber at the position where x is-L at the left end is as follows: the displacement u (-L) ═ 0; electron concentration n is 1021(ii) a Electric potential
The boundary conditions at the right end x-L are: stress T ═ 0; electron concentration n is 1021(ii) a Electric potential
The invention inspects the electrical behavior of the zinc oxide piezoelectric semiconductor nanofiber under the action of different local loading F and external voltage V, and specific results are shown in fig. 2a, fig. 2b and fig. 3.
Specifically, in FIG. 2aGiven an applied voltage V of 0, i.e. an electrical short across the zinc oxide piezoelectric semiconductor nanofibers, the potential is given under the action of local stresses F10 nN, F30 nN and F50 nN
Distribution along the zinc oxide piezoelectric semiconductor nanofibers. Due to the presence of the piezoelectric effect, the potential distribution appears as one depression and one projection. Wherein the recessed portions are referred to as local potential wells and the raised portions are referred to as local barriers. And due to the existence of nonlinear effect, the potential well and the potential barrier do not have central antisymmetry, so that the voltammetry characteristic curve of the zinc oxide piezoelectric semiconductor nanofiber also does not have central antisymmetry, namely two voltage critical values are generated.
In fig. 2b, given an applied local stress F of 300nN, the potential is given at different applied voltages V of 3V (volts), V of 6V, V V of 9V and V of 12V
Distribution along the zinc oxide piezoelectric semiconductor nanofibers. It can be seen that due to the existence of local potential wells and local barriers, when the applied voltage V is 3V and V is 6V, the influence of the applied voltage V on the potential distribution of the zinc oxide nanofibers cannot pass through the potential wells/barriers, i.e. the potential on the left side of the local stress loading region
Always 0. When the applied voltage V is 9V and 12V, the applied voltage is large enough to overcome potential well/potential barrier and to apply potential to the left side of the local stress loading area of the zinc oxide nanofiber
An influence is produced.
FIG. 3 shows the main results of the present invention. Specifically, fig. 3 shows the voltammetry characteristic curves of the zinc oxide piezoelectric semiconductor nanofibers of this example under the action of local stresses F-240 nN, F-260 nN, F-280 nN, and F-300 nN. It can be seen in the figure that: when the amplitude of the applied voltage is lower than a first voltage critical value, the current passing through the fiber is 0, namely, the current in any direction can not pass through the fiber no matter whether the voltage is positive or negative; when the amplitude of the applied voltage is higher than the first critical value and less than the second critical value, the current can flow to one direction but can not flow to the other direction; when the amplitude of the applied voltage is higher than a second critical value, the current can flow in two directions; and the magnitude of the applied stress has a significant influence on the magnitudes of the two voltage thresholds. Thus, the local stress acts like a switch and determines whether the zinc oxide piezoelectric semiconductor fiber conducts current in one or both directions. The invention also provides a basic idea and means for mechanically controlling the electrical behavior of the piezoelectric semiconductor fiber.
The foregoing is only a preferred embodiment of this invention and it should be noted that modifications can be made by those skilled in the art without departing from the principle of the invention and these modifications should also be considered as the protection scope of the invention.
Claims (6)
1. A method for regulating and controlling a micro-nano electromechanical switch through local external stress is characterized in that: a pair of local tensile or compressive stresses are acted on an N-type zinc oxide piezoelectric semiconductor nanofiber;
the N-type zinc oxide piezoelectric semiconductor nanofiber meets the equation of motion of the piezoelectric semiconductor phenomenological theory:
where T is the stress tensor, f is the physical vector, ρ mass density, u is the mechanical displacement vector, D is the electronic displacement vector, q represents the basic charge quantity, p and N are the hole and electron concentrations, N is+DAnd N-AIs the impurity concentration of the donor and acceptor, JpAnd JnCurrent densities of holes and electrons, respectively, i or j representing the ith or jth coordinate direction;
when the amplitude of the external voltage V is lower than a first voltage critical value, a potential well/potential barrier generated by local stress can prevent current in two directions from passing through the zinc oxide piezoelectric semiconductor nano-fiber; when the amplitude of the applied voltage is higher than a first voltage critical value and lower than a second voltage critical value, the potential well/potential barrier only prevents the conduction of current in one direction and allows the current in the other direction to pass through the zinc oxide piezoelectric semiconductor nano-fiber; when the amplitude of the applied voltage is higher than a second voltage critical value, the current in two directions can pass through the zinc oxide piezoelectric semiconductor nano-fiber.
2. A method of modulating a micro-nano-scale electromechanical switch by localized applied stress as claimed in claim 1, wherein: the N-type zinc oxide piezoelectric semiconductor nanofiber also satisfies the piezoelectric semiconductor phenomenological theory constitutive equation:
where S is the strain tensor, E is the electric field strength vector, SEIs the elastic compliance constant, d is the piezoelectric constant, εTIs a dielectric constant, mupAnd munIs the carrier mobility, DpAnd DnCarrier diffusion constant.
3. A method of modulating a micro-nano-scale electromechanical switch by localized applied stress as claimed in claim 2, wherein: the strain tensor S, the mechanical displacement vector u, the electric field intensity vector E and the electric potential of the N-type zinc oxide piezoelectric semiconductor nano-fiber
The following relation is also satisfied:
4. regulation as claimed in claim 3 by local applied stressThe method of the micro-nano electromechanical switch is characterized in that: the boundary condition of the N-type zinc oxide piezoelectric semiconductor nanofiber at the position where x is-L at the left end is as follows: the displacement u (-L) is 0 and the electron concentration n is 1021Electric potential of
The boundary conditions at the right end x-L are: stress T is 0 and electron concentration n is 1021Electric potential of
5. A method of modulating a micro-nano-scale electromechanical switch by localized applied stress as claimed in claim 1, wherein: the length 2a of the loading area of the local tensile or compressive stress is more than 0 and less than or equal to one fiftieth of the total length 2L of the N-type zinc oxide piezoelectric semiconductor nano-fiber.
6. The method for modulating the micro-nano-scale electromechanical switch through local applied stress as claimed in claim 5, wherein: due to the application of local stress, the N-type zinc oxide piezoelectric semiconductor fiber generates potential wells/barriers in a local loading area and the vicinity thereof.
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| CN110676371A (en) * | 2019-10-14 | 2020-01-10 | 浙江大学 | Switch made of piezoelectric semiconductor material based on thermal effect |
| CN111477688B (en) * | 2020-05-07 | 2025-06-17 | 浙江大学 | A piezomagnetic-piezoelectric semiconductor device based on local magnetic field control |
| CN115036413B (en) * | 2022-06-09 | 2024-03-15 | 南京航空航天大学 | Composite structure for regulating and controlling piezoelectric semiconductor homojunction barrier configuration and volt-ampere characteristics |
| CN116861597A (en) * | 2023-09-04 | 2023-10-10 | 西北工业大学宁波研究院 | Switch element design method based on piezoelectric semiconductor composite film |
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