CN110391324A - Light-emitting elements and electronic devices - Google Patents
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
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Abstract
Description
技术领域technical field
本发明涉及一种发光元件与相关的电子装置,特别涉及一种能提高发光效率的发光元件与相关的电子装置。The invention relates to a light-emitting element and a related electronic device, in particular to a light-emitting element capable of improving luminous efficiency and a related electronic device.
背景技术Background technique
公众显示器(public information display,PID)是一种常用于户外的显示设备,为了改善因为反射阳光而造成画面对比度降低的情况,因此一般公众显示器所使用的发光二极管(light emitting diode,LED)都使用黑色封装材料。然而,由于LED芯片被黑色封装材料覆盖,其所产生的光线会有相当的比例被黑色封装材料吸收,因而降低了发光效率,使公众显示器的整体亮度较低。因此如何提高公众显示器的光线使用效率仍为业界研发的方向。The public information display (PID) is a display device commonly used outdoors. In order to improve the picture contrast reduction caused by reflected sunlight, the light emitting diode (LED) used in general public displays uses Black encapsulation material. However, since the LED chip is covered by the black encapsulation material, a considerable proportion of the light generated by it will be absorbed by the black encapsulation material, thereby reducing the luminous efficiency and making the overall brightness of the public display lower. Therefore, how to improve the light utilization efficiency of the public display is still a direction of research and development in the industry.
发明内容Contents of the invention
本发明的一实施例提供了一种发光元件,其包括一封装基板、一第一发光二极管芯片、一封装材料以及一光阻挡层。其中,发光二极管芯片设置在封装基板上,封装材料设置于发光二极管芯片与封装基板上,而光阻挡层设置于封装材料上并具有一第一开孔。在俯视方向上,光阻挡层的第一开孔的面积小于发光元件的面积。An embodiment of the present invention provides a light emitting element, which includes a package substrate, a first light emitting diode chip, a package material and a light blocking layer. Wherein, the LED chip is arranged on the packaging substrate, the packaging material is arranged on the LED chip and the packaging substrate, and the light blocking layer is arranged on the packaging material and has a first opening. In the plan view direction, the area of the first opening of the light blocking layer is smaller than the area of the light emitting element.
本发明的另一实施例提供了一种电子装置,其包括一主基板与至少一发光元件。主基板包括一电路与多个连接垫,电路与多个连接垫均设置在主基板表面。发光元件设置在主基板上并电连接于多个连接垫的至少其中一个。发光元件包括一封装基板、一发光二极管芯片、一封装材料以及一光阻挡层。其中,发光二极管芯片设置在封装基板上,封装材料设置于发光二极管芯片与封装基板上,而光阻挡层设置于封装材料上并具有一开孔。在俯视方向上,光阻挡层的开孔的面积小于发光元件的面积。Another embodiment of the present invention provides an electronic device, which includes a main substrate and at least one light emitting element. The main substrate includes a circuit and a plurality of connection pads, and the circuit and the plurality of connection pads are all arranged on the surface of the main substrate. The light emitting element is disposed on the main substrate and electrically connected to at least one of the plurality of connection pads. The light emitting element includes a package substrate, a light emitting diode chip, a package material and a light blocking layer. Wherein, the LED chip is arranged on the packaging substrate, the packaging material is arranged on the LED chip and the packaging substrate, and the light blocking layer is arranged on the packaging material and has an opening. In the plan view direction, the area of the opening of the light blocking layer is smaller than the area of the light emitting element.
附图说明Description of drawings
图1为本发明发光元件的第一实施例的剖面示意图Fig. 1 is a schematic cross-sectional view of a first embodiment of a light-emitting element of the present invention
图2为本发明发光元件的第一实施例的俯视示意图。FIG. 2 is a schematic top view of the first embodiment of the light-emitting element of the present invention.
图3为本发明发光元件的第二实施例的剖面示意图。FIG. 3 is a schematic cross-sectional view of a second embodiment of the light-emitting element of the present invention.
图4为本发明发光元件的第二实施例的变化实施例的俯视示意图。Fig. 4 is a schematic top view of a variant embodiment of the second embodiment of the light emitting element of the present invention.
图5为本发明发光元件的第二实施例的另一变化实施例的俯视示意图。FIG. 5 is a schematic top view of another variant embodiment of the second embodiment of the light emitting element of the present invention.
图6为本发明发光元件的第三实施例的俯视示意图。FIG. 6 is a schematic top view of a third embodiment of the light emitting element of the present invention.
图7为本发明发光元件的第四实施例的剖面示意图。FIG. 7 is a schematic cross-sectional view of a fourth embodiment of the light-emitting element of the present invention.
图8为本发明发光元件的第五实施例的剖面示意图。FIG. 8 is a schematic cross-sectional view of a fifth embodiment of the light-emitting element of the present invention.
图9为本发明电子装置的俯视示意图。FIG. 9 is a schematic top view of the electronic device of the present invention.
图10为本发明电子装置的局部放大示意图。FIG. 10 is a partially enlarged schematic view of the electronic device of the present invention.
附图标记说明:100-发光元件;102-封装基板;102s-上表面;104、104R、104G、104B-发光二极管芯片;106-封装材料;106a-微结构;108-光阻挡层;1081-光反射层;1082-光吸收层;108a、108b、108c-开孔;108s-内侧壁;110-粒子;200-电子装置;202-主基板;204-电路;206-连接垫;A1、A2、A3-面积;L1-正向光线;L2-侧向光线;Z-方向;θ-内夹角。Explanation of reference numerals: 100-light-emitting element; 102-packaging substrate; 102s-upper surface; 104, 104R, 104G, 104B-light-emitting diode chip; 106-packaging material; 106a-microstructure; 108-light blocking layer; 1081- 1082-light-absorbing layer; 108a, 108b, 108c-opening; 108s-inside wall; 110-particles; 200-electronic device; 202-main substrate; 204-circuit; 206-connection pad; A1, A2 , A3-area; L1-forward light; L2-lateral light; Z-direction; θ-inner angle.
具体实施方式Detailed ways
下文结合具体实施例和附图对本发明的内容进行详细描述,且为了使本发明的内容更加清楚和易懂,下文各附图可能为简化的示意图,且其中的元件可能并非按比例绘制。并且,附图中的各元件的数量与尺寸仅为示意,并非用于限制本发明的范围。The content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings, and in order to make the content of the present invention clearer and easier to understand, each of the following drawings may be a simplified schematic diagram, and the elements may not be drawn to scale. Moreover, the number and size of each element in the drawings are only for illustration and are not intended to limit the scope of the present invention.
本发明通篇说明书与所附的权利要求中会使用某些词汇来指称特定元件。本领域技术人员应理解,电子设备制造商可能会以不同的名称来指称相同的元件,且本文并未意图区分那些功能相同但名称不同的元件。当在本说明书中使用术语"包括"、"包括"和/或"具有"时,其指定了所述特征、区域、步骤、操作和/或元件的存在,但并不排除一个或多个其他特征、区域、步骤、操作、元件和/或其组合的存在或增加。当诸如层或区域的元件被称为在另一元件(或其变型)"上"或延伸到另一元件"上"时,它可以直接在另一元件上或直接延伸到另一元件上,或者两者之间还可以存在插入的元件。另一方面,当称一元件"直接在"另一元件(或其变型)上或者"直接"延伸到另一元件"上"时,两者间不存在插入元件。并且,当一元件被称作"耦接"到另一元件(或其变型)时,它可以直接连接到另一元件或通过一或多个元件间接地连接(例如电连接)到另一元件。Certain terms will be used throughout the specification and appended claims to refer to particular elements. Those skilled in the art should understand that manufacturers of electronic equipment may refer to the same components with different names, and this document does not intend to distinguish those components with the same function but different names. When the terms "comprising", "comprising" and/or "having" are used in this specification, it specifies the existence of said features, regions, steps, operations and/or elements, but does not exclude one or more other The presence or addition of features, regions, steps, operations, elements, and/or combinations thereof. When an element such as a layer or region is referred to as being "on" or extending "on" another element (or a variation thereof), it can be directly on or extend directly to the other element, Or there may be intervening elements between the two. On the other hand, when an element is referred to as being "directly on" or extending "directly onto" another element (or variations thereof), there are no intervening elements present. Also, when an element is referred to as being "coupled" to another element (or variations thereof), it can be directly connected to the other element or be indirectly connected (eg, electrically connected) to the other element through one or more elements. .
须说明的是,下文中不同实施例所提供的技术方案可相互替换、组合或混合使用,以在未违反本发明精神的情况下构成另一实施例。It should be noted that the technical solutions provided in different embodiments below can be replaced, combined or mixed with each other to form another embodiment without violating the spirit of the present invention.
请参考图1与图2,图1为本发明发光元件的第一实施例的剖面示意图,图2为本发明发光元件的第一实施例的俯视示意图。本实施例的发光元件100为一发光二极管封装体,其包括一封装基板102、一发光二极管(LED)芯片104、一封装材料106以及一光阻挡层108。封装基板102可包括绝缘材料层与导电材料层(未绘出),其中导电材料层可以于封装基板102中形成导线、电极、连接垫或其他适合的元件,但不以此为限。本实施例的封装基板102的表面颜色举例为浅色或白色等能提高光线反射率的颜色,或者封装基板102的表面主要以高反射材料制作,但不以此为限。发光二极管芯片104设置在封装基板102表面,其底部可藉由焊料或其他适合的导电材料而电连接封装基板102中的导线。封装材料106覆盖发光二极管芯片104与封装基板102表面,可以保护或固定发光二极管芯片104,。封装材料106可包括透明或高穿透率材料,此处的透明或高穿透率材料,是指在对应发光二极管芯片所发射的波长范围为透明或高穿透率的材料,例如可以包括环氧基树脂(epoxy based resin)、硅或其他适合的材料,其折射率的范围可介于1.4到1.7之间(1.4≤折射率≤1.7),或介于1.5到1.6之间(1.5≤折射率≤1.6),但不以此为限。光阻挡层108覆盖并包围封装材料106,且光阻挡层108在相对于封装材料106的上表面具有一开孔108a。在俯视方向上,本实施例的光阻挡层108的开孔108a与发光二极管芯片104至少一部分重迭,亦即至少一部分由发光二极管芯片104发出的光不经过反射而直接从开孔108a射出。在本实施例中,开孔108a的面积(图1中以符号A1表示)小于封装基板102的面积(图1中以符号A2表示),而在其他实施例中,开孔108a在俯视方向上的面积A1小于发光元件100封装体的面积。在本实施例中,开孔108a为圆形,但不以此为限,在其他实施例中,开孔108a可以具有其他各种适合的几何形状,例如正方形。Please refer to FIG. 1 and FIG. 2 , FIG. 1 is a schematic cross-sectional view of the first embodiment of the light emitting device of the present invention, and FIG. 2 is a schematic top view of the first embodiment of the light emitting device of the present invention. The light emitting element 100 of this embodiment is a light emitting diode package, which includes a package substrate 102 , a light emitting diode (LED) chip 104 , a package material 106 and a light blocking layer 108 . The package substrate 102 may include an insulating material layer and a conductive material layer (not shown), wherein the conductive material layer may form wires, electrodes, connection pads or other suitable elements in the package substrate 102 , but is not limited thereto. The surface color of the packaging substrate 102 in this embodiment is, for example, a light color or white color that can increase light reflectivity, or the surface of the packaging substrate 102 is mainly made of high reflective materials, but not limited thereto. The LED chip 104 is disposed on the surface of the packaging substrate 102 , and the bottom thereof can be electrically connected to wires in the packaging substrate 102 by solder or other suitable conductive materials. The encapsulation material 106 covers the surface of the LED chip 104 and the packaging substrate 102 to protect or fix the LED chip 104'. The packaging material 106 may include a transparent or high-transmittance material, where the transparent or high-transmittance material refers to a material that is transparent or high-transmittance in the wavelength range emitted by the corresponding light-emitting diode chip, for example, may include a ring Epoxy based resin, silicon or other suitable materials, the range of its refractive index can be between 1.4 and 1.7 (1.4≤refractive index≤1.7), or between 1.5 and 1.6 (1.5≤refractive index rate≤1.6), but not limited to this. The light blocking layer 108 covers and surrounds the packaging material 106 , and the light blocking layer 108 has an opening 108 a on the upper surface opposite to the packaging material 106 . In the plan view direction, the opening 108a of the light blocking layer 108 in this embodiment overlaps at least a part of the LED chip 104, that is, at least part of the light emitted by the LED chip 104 is directly emitted from the opening 108a without being reflected. In this embodiment, the area of the opening 108a (indicated by symbol A1 in FIG. 1 ) is smaller than the area of the package substrate 102 (indicated by symbol A2 in FIG. 1 ), while in other embodiments, the area of the opening 108a is in the top view direction. The area A1 of is smaller than the area of the package body of the light emitting element 100 . In this embodiment, the opening 108a is circular, but not limited thereto. In other embodiments, the opening 108a may have other suitable geometric shapes, such as a square.
在本实施例中,光阻挡层108具有双层结构,包括一光反射层1081与一光吸收层1082,其中光反射层1081设置在光吸收层1082与封装材料106之间。光反射层1081包含具有高反射率的材料,例如反射率可介于70%到100%之间(70%≤反射率<100%),在另外的实施例中,反射率则可介于90%到100%之间(90%≤反射率<100%)。高反射率材料能有效地将行进至其表面的光线反射,其颜色举例为浅色或白色,但不以此为限。In this embodiment, the light-blocking layer 108 has a double-layer structure, including a light-reflecting layer 1081 and a light-absorbing layer 1082 , wherein the light-reflecting layer 1081 is disposed between the light-absorbing layer 1082 and the packaging material 106 . The light reflection layer 1081 includes materials with high reflectivity, for example, the reflectivity can be between 70% and 100% (70%≤reflectivity<100%), and in another embodiment, the reflectivity can be between 90% % to 100% (90% ≤ reflectance < 100%). The high-reflectivity material can effectively reflect light traveling on its surface, and its color is, for example, light color or white, but not limited thereto.
光吸收层1082的材料举例为低反射率材料,能有效地将行进至其表面的光线吸收,其颜色举例为深色或黑色,例如可为黑胶,但不以此为限。举例而言,光吸收层1082的反射率可以介于0%到30%之间(0%<反射率≤30%),在另外的实施例中,反射率则可介于10%到0%之间(0%<反射率≤10%),但不以此为限。在某些实施例中,光吸收层1082表面还可以经由粗糙化处理产生可让光线散射的粗糙表面,以进一步降低光线反射率。光反射层1081与光吸收层1082可经由二次射出成型或分别以喷涂方式形成于封装材料106表面,但光反射层1081与光吸收层1082的形成方式不限于此。由上述可知,光阻挡层108的双层结构具有内层与外层,其中内层为光反射层1081,外层为光吸收层1082。由于光阻挡层108具有开孔108a且内层为光反射层1081,发光二极管芯片104所发出的部分光线L1可以直接从光阻挡层108的开孔108a射出,而发光二极管芯片104所发出的另一部分光线L2可经由光反射层1081的一次反射、二次反射或多次反射,再经由开孔108a射出。因此,设置在光阻挡层108内层的光反射层1081可以提高光利用率,再搭配面积小于封装基板102的开孔108a设计可以使光线集中于开孔108a处出光,进一步提高光利用率。另一方面,发光元件100的最外侧的光吸收层1082可以吸收照射至发光元件100外表面的光线,当发光元件100元件应用在公众显示器或任何户外显示设备或环境光源强烈的电子装置中,光吸收层1082可以有效减少环境光的反射,提高画面对比。The material of the light-absorbing layer 1082 is, for example, a material with low reflectivity, which can effectively absorb the light passing on its surface, and its color is, for example, dark or black, such as vinyl, but not limited thereto. For example, the reflectivity of the light absorbing layer 1082 can be between 0% and 30% (0%<reflectivity≤30%), and in other embodiments, the reflectivity can be between 10% and 0%. Between (0%<reflectance≤10%), but not limited thereto. In some embodiments, the surface of the light absorbing layer 1082 can also be roughened to produce a rough surface that can scatter light, so as to further reduce light reflectivity. The light reflective layer 1081 and the light absorbing layer 1082 can be formed on the surface of the encapsulation material 106 through double injection molding or spraying respectively, but the forming methods of the light reflective layer 1081 and the light absorbing layer 1082 are not limited thereto. It can be known from the above that the double-layer structure of the light blocking layer 108 has an inner layer and an outer layer, wherein the inner layer is the light reflection layer 1081 and the outer layer is the light absorption layer 1082 . Since the light blocking layer 108 has an opening 108a and the inner layer is a light reflecting layer 1081, part of the light L1 emitted by the light emitting diode chip 104 can be directly emitted from the opening 108a of the light blocking layer 108, while the other light emitted by the light emitting diode chip 104 A part of the light L2 can be reflected once, twice or multiple times by the light reflective layer 1081, and then exit through the opening 108a. Therefore, the light reflective layer 1081 disposed in the inner layer of the light blocking layer 108 can improve the light utilization efficiency, and the design of the opening 108a with an area smaller than the packaging substrate 102 can make the light concentrated at the opening 108a to further improve the light utilization efficiency. On the other hand, the outermost light-absorbing layer 1082 of the light-emitting element 100 can absorb the light irradiated on the outer surface of the light-emitting element 100. When the light-emitting element 100 is used in public displays or any outdoor display equipment or electronic devices with strong ambient light sources, The light absorbing layer 1082 can effectively reduce the reflection of ambient light and improve the picture contrast.
本发明所提及的发光二极管元件(LED)包含无机发光二极管元件(normal LED)、次毫米无机发光二极管元件(mini LED)、微型无机发光二极管元件(micro LED)、有机发光二极管元件(OLED)、量子点发光二极管元件(QLED)或其组合,但不以此为限。在本实施例中是以次毫米无机发光二极管元件为例,而在以下其他实施例与变化型中,发光二极管元件LED也都以次毫米无机发光二极管元件为例,不再赘述。The light-emitting diode elements (LED) mentioned in the present invention include inorganic light-emitting diode elements (normal LED), submillimeter inorganic light-emitting diode elements (mini LED), micro-inorganic light-emitting diode elements (micro LED), organic light-emitting diode elements (OLED) , quantum dot light emitting diode (QLED) or a combination thereof, but not limited thereto. In this embodiment, the sub-millimeter inorganic light emitting diode element is taken as an example, and in the following other embodiments and variants, the light-emitting diode element LED is also taken as an example, and details are not repeated here.
本发明的电子装置并不以上述实施例为限。下文将继续揭示本发明的其它实施例或变化形,为了简化说明并突显各实施例或变化形之间的差异,下文中使用相同标号标注相同元件,并不再对重复部分作赘述。此外,本发明后续实施例中各膜层材料与厚度及制程步骤的条件皆可参考第一实施例,因此不再赘述。The electronic device of the present invention is not limited to the above-mentioned embodiments. The following will continue to disclose other embodiments or variants of the present invention. In order to simplify the description and highlight the differences between the embodiments or variants, the same reference numerals are used to mark the same components, and repeated parts will not be repeated. In addition, the material and thickness of each film layer and the conditions of the process steps in the subsequent embodiments of the present invention can refer to the first embodiment, so details are not repeated here.
请参考图3,图3为本发明发光元件的第二实施例的剖面示意图。本实施例与第一实施例的主要不同处在于本实施例的发光元件100包括三个发光二极管芯片104R、104G、104B设置于封装基板102表面,发光二极管芯片104R、104G、104B为分别可以产生不同颜色光线的发光二极管芯片,例如能分别产生红光、绿光与蓝光,但不以此为限。当本实施例的发光元件100应用于电子装置中,可以使发光二极管芯片104R、104G、104B经由封装基板102中的导电材料层电连接外部电路,以外部电路控制发光二极管芯片104R、104G、104B分别同时或不同时发光,例如使发光元件100在不同时间分别产生红光、绿光或蓝光,或者,可以使发光二极管芯片104R、104G、104B的其中两个或三个同时发光。在本实施例中,在俯视方向上,光阻挡层108的开孔108a的面积A1小于发光元件100的面积(以封装基板102的面积A2表示),再搭配光反射层1081与封装材料106的设置,当发光二极管芯片104R、104G、104B的其中两个或三个同时发光时,所发出的光线可以经由光反射层1081反射回封装材料106,再经由面积较小的开孔108a射出,因此光线在由发光元件100射出前能进行混光,提高色彩表现。本实施例的开孔108a的面积A1设计为在俯视方向上大于发光二极管芯片104R、104G或104B的面积A3,但在其他实施例中,开孔108a的面积A1也可小于发光二极管芯片104R、104G或104B的面积A3。此外,可以依据发光二极管芯片104R、104G、104B的发光效率、色彩表现或人眼感知效果的不同来设计发光二极管芯片104R、104G、104B相对于开孔108a的位置。例如,若发光二极管芯片104G的发光效率较低于发光二极管芯片104R、104B,或是人眼对于发光二极管芯片104G所发出的光线颜色感知度较低,则可设计成在俯视方向上发光二极管芯片104G有较大的面积与开孔108a重迭,而发光二极管芯片104R、104B在俯视方向上与开孔108a重迭的面积较小,使得发光二极管芯片104G所发出的大部分光线可以直接由开孔108a射出,而发光二极管芯片104R、104B所发出的光线中大部分则是先经由光反射层1082反射后才由开孔108a射出,据此可以均匀化不同颜色的色彩表现。Please refer to FIG. 3 . FIG. 3 is a schematic cross-sectional view of a second embodiment of the light-emitting element of the present invention. The main difference between this embodiment and the first embodiment is that the light-emitting element 100 of this embodiment includes three light-emitting diode chips 104R, 104G, and 104B arranged on the surface of the package substrate 102, and the light-emitting diode chips 104R, 104G, and 104B can be produced respectively. Light emitting diode chips of different colors, for example, can respectively generate red light, green light and blue light, but not limited thereto. When the light-emitting element 100 of this embodiment is applied to an electronic device, the light-emitting diode chips 104R, 104G, and 104B can be electrically connected to an external circuit through the conductive material layer in the packaging substrate 102, and the light-emitting diode chips 104R, 104G, and 104B can be controlled by the external circuit. Simultaneously or differently emit light, for example, make the light emitting element 100 generate red light, green light or blue light at different times, or make two or three of the light emitting diode chips 104R, 104G, 104B emit light simultaneously. In this embodiment, in the plan view direction, the area A1 of the opening 108a of the light blocking layer 108 is smaller than the area of the light-emitting element 100 (represented by the area A2 of the packaging substrate 102), and the combination of the light reflecting layer 1081 and the packaging material 106 It is set that when two or three of the light emitting diode chips 104R, 104G, and 104B emit light at the same time, the emitted light can be reflected back to the packaging material 106 through the light reflection layer 1081, and then emitted through the opening 108a with a smaller area, so The light can be mixed before being emitted from the light emitting element 100 to improve color performance. The area A1 of the opening 108a in this embodiment is designed to be larger than the area A3 of the light-emitting diode chip 104R, 104G or 104B in the plan view direction, but in other embodiments, the area A1 of the opening 108a can also be smaller than the light-emitting diode chip 104R, 104R, or 104B. Area A3 of 104G or 104B. In addition, the positions of the LED chips 104R, 104G, 104B relative to the opening 108a can be designed according to the luminous efficiency, color performance or human perception effect of the LED chips 104R, 104G, 104B. For example, if the luminous efficiency of the LED chip 104G is lower than that of the LED chips 104R and 104B, or the human eye has a lower perception of the color of the light emitted by the LED chip 104G, the LED chip can be designed to 104G has a large area overlapping with the opening 108a, while the area of the LED chip 104R, 104B overlapping with the opening 108a in the direction of top view is small, so that most of the light emitted by the LED chip 104G can be directly passed through the opening. The hole 108a emits, and most of the light emitted by the LED chip 104R, 104B is reflected by the light reflection layer 1082 before being emitted from the hole 108a, so that the color performance of different colors can be uniformed.
请参考图4,图4为本发明发光元件的第二实施例的变化实施例的俯视示意图。在本变化实施例中,开孔108a与发光二极管芯片104R、104G、104B的投影的至少一部分重迭。请参考图5,图5为本发明发光元件的第二实施例的另一变化实施例的俯视示意图。图5中发光元件100的开孔108a可以大于发光二极管芯片104R、104G、104B的面积总和,且在俯视方向上发光二极管芯片104R、104G、104B皆位于开孔108a内。此设计可以使发光二极管芯片104R、104G、104B所发出的大部分光线直接由开孔108a射出而因此提高出光亮度。Please refer to FIG. 4 . FIG. 4 is a schematic top view of a variant embodiment of the second embodiment of the light emitting element of the present invention. In this variant embodiment, the opening 108 a overlaps with at least a part of projections of the LED chips 104R, 104G, and 104B. Please refer to FIG. 5 , which is a schematic top view of another variant embodiment of the second embodiment of the light emitting element of the present invention. The opening 108a of the light-emitting element 100 in FIG. 5 may be larger than the sum of the areas of the LED chips 104R, 104G, and 104B, and the LED chips 104R, 104G, and 104B are all located in the opening 108a in a plan view direction. This design allows most of the light emitted by the LED chips 104R, 104G, and 104B to be emitted directly through the opening 108a, thus improving the brightness of the emitted light.
请参考图6,图6为本发明发光元件的第三实施例的俯视示意图。本实施例与图3、图4及图5所示实施例和变化型的差异主要在于光阻挡层108包括三个开孔108a、108b、108c,其位置分别与发光二极管芯片104G、104B、104R对应。并且,在本实施例中,开孔108a、108b、108c在俯视方向上的面积皆大于发光二极管芯片104G、104B、104R的面积,且开孔108a、108b、108c与发光二极管芯片104G、104B、104R至少部分重迭。因此发光二极管芯片104G、104B、104R的所发出的大部分光线可由开孔108a、108b、108c直接射出,少部分的光线会先经由光阻挡层108的光反射层1081反射后再由开孔108a、108b、108c射出,此设计可以提高整体出光亮度。在本实施例的变化实施例中,开孔108a、108b、108c的面积可小于发光二极管芯片104G、104B、104R的投影面积。当开孔108a、108b、108c在发光元件100顶部所占面积较小,即表示在发光元件100顶部的光吸收层1082所占面积较大,此设计可以降低反射环境光线的几率,提高画面对比度。Please refer to FIG. 6 , which is a schematic top view of a third embodiment of the light-emitting element of the present invention. The difference between this embodiment and the embodiment shown in FIG. 3, FIG. 4 and FIG. correspond. Moreover, in this embodiment, the areas of the openings 108a, 108b, 108c in the plan view direction are larger than the areas of the LED chips 104G, 104B, 104R, and the openings 108a, 108b, 108c are closely connected to the LED chips 104G, 104B, 104R at least partially overlaps. Therefore, most of the light emitted by the LED chips 104G, 104B, and 104R can be directly emitted through the openings 108a, 108b, and 108c, and a small part of the light will first be reflected by the light reflection layer 1081 of the light blocking layer 108 and then pass through the opening 108a. , 108b, 108c shoot out, this design can improve the overall light brightness. In a variation of this embodiment, the areas of the openings 108a, 108b, 108c may be smaller than the projected areas of the LED chips 104G, 104B, 104R. When the openings 108a, 108b, and 108c occupy a small area on the top of the light emitting element 100, it means that the light absorbing layer 1082 occupies a large area on the top of the light emitting element 100. This design can reduce the chance of reflecting ambient light and improve the contrast of the picture. .
请参考图7,图7为本发明发光元件的第四实施例的剖面示意图。本实施例的发光二极管芯片104G、104B、104R在俯视方向的相对排列位置可参考图4。本实施例与前述实施例的主要差异点在于封装材料106中可掺杂有粒子110,以进一步提高光线在封装材料106中的混光效果,此粒子110可以包含散射粒子、扩散粒子、反射粒子、折射粒子、其他可调整光型的粒子、或上述粒子的组合,但不以此为限。在一些实施例中,封装材料106内还可掺杂量子点、荧光粉或磷光粉等可以调整光线颜色的材料。此外,本实施例的封装材料106在被开孔108a暴露的部分表面可具有微结构106a,例如具有规则或不规则的咬花或凹凸图案。微结构106a可以增加散射效果,使得开孔108a处较不易反射环境光线。本实施例的粒子110与微结构106a可以单独或同时应用于本发明其他实施例与变化型中,例如在某些实施例中,发光元件100的封装材料106可以包含粒子110但表面不具有微结构106a,而在另一些实施例中,发光元件100的封装材料106表面可具有微结构106a,但没有掺杂粒子110。Please refer to FIG. 7 , which is a schematic cross-sectional view of a fourth embodiment of the light-emitting element of the present invention. Refer to FIG. 4 for the relative arrangement positions of the LED chips 104G, 104B, and 104R in the top view direction of this embodiment. The main difference between this embodiment and the previous embodiments is that the packaging material 106 can be doped with particles 110 to further improve the light mixing effect of light in the packaging material 106. The particles 110 can include scattering particles, diffusing particles, and reflecting particles. , refracting particles, other particles that can adjust the light type, or a combination of the above particles, but not limited thereto. In some embodiments, the encapsulation material 106 may also be doped with quantum dots, fluorescent powder or phosphorescent powder and other materials that can adjust the color of light. In addition, the encapsulation material 106 of this embodiment may have a microstructure 106a on a part of the surface exposed by the opening 108a, such as regular or irregular embossing or a concave-convex pattern. The microstructure 106a can increase the scattering effect, so that the opening 108a is less likely to reflect ambient light. The particles 110 and microstructures 106a of this embodiment can be applied to other embodiments and variants of the present invention individually or simultaneously. In other embodiments, the surface of the encapsulation material 106 of the light-emitting element 100 may have microstructures 106a, but no doped particles 110 are present.
请参考图8,图8为本发明发光元件的第五实施例的剖面示意图。与前述实施例相较,本实施例的主要不同点在于发光元件100的光阻挡层108的内侧壁108s相对于封装基板上表面102s具有一倾斜角,并且在一些实施例中,封装基板102的上表面102s与光阻挡层108的内侧壁108s之间的内夹角θ可大于90度且小于180度。此设计可以减少光线在封装材料106中的反射次数,经由较少的反射次数即可由开孔108a射出,因而提高发光效率。在另外的实施例中,封装基板102的上表面102s与光阻挡层108的内侧壁108s之间的内夹角θ可介于0度和90度之间(0度<内夹角θ≤90度)。Please refer to FIG. 8 , which is a schematic cross-sectional view of a fifth embodiment of the light-emitting element of the present invention. Compared with the previous embodiments, the main difference of this embodiment is that the inner wall 108s of the light blocking layer 108 of the light emitting element 100 has an inclination angle relative to the upper surface 102s of the packaging substrate, and in some embodiments, the surface of the packaging substrate 102 The inner angle θ between the upper surface 102s and the inner sidewall 108s of the light blocking layer 108 may be greater than 90 degrees and less than 180 degrees. This design can reduce the number of reflections of light in the packaging material 106 , and the light can be emitted from the opening 108 a through fewer reflections, thereby improving the luminous efficiency. In another embodiment, the inner angle θ between the upper surface 102s of the package substrate 102 and the inner sidewall 108s of the light blocking layer 108 can be between 0 degrees and 90 degrees (0 degrees<inner angle θ≤90 Spend).
请参考图9与图10,图9为本发明电子装置的俯视示意图,而图10为本发明电子装置的局部放大示意图。前述本发明的发光元件100可应用于各种电子装置200中。电子装置200可为一显示器,例如拼接式显示器或可挠式显示器,但不以此为限。在某些实施例中,本发明的电子装置200可为一发光二极管显示面板,例如为公众显示器。在某些实施例中,电子装置200可为一发光装置,例如可以作为非自发光显示面板的背光源或背光模块。然而,本发明的电子装置200不以上述举例为限。本实施例是以电子装置200为一公众显示器为例。本发明的的电子装置200包括一主基板202与至少一发光元件100。主基板202包括至少一电路204与多个连接垫206,电路204与多个连接垫206均设置在主基板202表面。电路204可包含薄膜晶体管、导线、电容或其他适合的电子元件,图9中是以晶体管符号表示电路204。在图10中,连接垫206可由金属材料或任何适合的导电材料构成。发光元件100设置在主基板202上并经由连接垫206而电连接于电路204。图9与图10中的发光元件100是以图1与图2所示者为例,但不以此为限,前述在各实施例与变化实施例中提到的发光元件100皆可应用于本发明的电子装置200,于此不再赘述发光元件100的详细结构。在本实施例中,电子装置200可包括多个发光元件100,成数组型式设置在主基板202表面。发光元件100底部的连接垫可经由焊料或其他连接方式而电连接其下方的连接垫206。根据本发明,连接垫206的设置范围小于所对应的发光元件100在主基板202上的投影面积,换言之,在俯视方向上,发光元件100与所电连接的连接垫206重迭,连接垫206被发光元件100遮蔽而不会在俯视方向上显露,在其他实施例中,连接垫206则是大部分被发光元件100所遮蔽。此设计可以减少包含金属材料的连接垫206未被遮蔽的部分以减少反射环境光线的几率,改善画面对比度。Please refer to FIG. 9 and FIG. 10 , FIG. 9 is a schematic top view of the electronic device of the present invention, and FIG. 10 is a partially enlarged schematic view of the electronic device of the present invention. The aforementioned light-emitting element 100 of the present invention can be applied in various electronic devices 200 . The electronic device 200 can be a display, such as a spliced display or a flexible display, but not limited thereto. In some embodiments, the electronic device 200 of the present invention can be an LED display panel, such as a public display. In some embodiments, the electronic device 200 can be a light emitting device, for example, can be used as a backlight or a backlight module of a non-self-luminous display panel. However, the electronic device 200 of the present invention is not limited to the above examples. This embodiment takes the electronic device 200 as a public display as an example. The electronic device 200 of the present invention includes a main substrate 202 and at least one light emitting element 100 . The main substrate 202 includes at least one circuit 204 and a plurality of connection pads 206 , and the circuit 204 and the plurality of connection pads 206 are both disposed on the surface of the main substrate 202 . The circuit 204 may include thin film transistors, wires, capacitors or other suitable electronic components. The circuit 204 is represented by a transistor symbol in FIG. 9 . In FIG. 10, the connection pads 206 may be composed of a metallic material or any suitable conductive material. The light emitting element 100 is disposed on the main substrate 202 and electrically connected to the circuit 204 through the connection pad 206 . The light-emitting element 100 in FIG. 9 and FIG. 10 is shown in FIG. 1 and FIG. 2 as an example, but it is not limited thereto. For the electronic device 200 of the present invention, the detailed structure of the light emitting element 100 will not be repeated here. In this embodiment, the electronic device 200 may include a plurality of light emitting elements 100 arranged in groups on the surface of the main substrate 202 . The connection pads at the bottom of the light emitting device 100 can be electrically connected to the connection pads 206 below it via solder or other connection methods. According to the present invention, the setting range of the connection pads 206 is smaller than the projected area of the corresponding light-emitting element 100 on the main substrate 202. The connection pads 206 are mostly hidden by the light emitting device 100 and are not exposed in the top view direction because they are covered by the light emitting device 100 . This design can reduce the unshielded portion of the connection pad 206 including the metal material to reduce the possibility of reflecting ambient light and improve the image contrast.
由上述可知,本发明的发光元件具有光阻挡层设置在高穿透率的封装材料外围,且光阻挡层具有开孔可以容许光线穿过,使得发光元件的光线能集中由开孔射出。光阻挡层的内层为光反射层,能提高光线由开孔射出的几率以提高光利用率,并且在发光元件包含多个可发出不同颜色光线的发光二极管芯片时促进混光。光阻挡层的外层为光吸收层,能降低环境光线的反射率,进而降低环境光线对发光元件所发出光线的干扰以提高对比度度。当本发明的发光元件应用在电子装置中,由于能降低环境光线的反射,提高光线利用率,或改善画面对比度。另外,位于电子装置的主基板表面的连接垫因为被发光元件遮蔽,也可以降低环境光线的反射而提高影像表现。It can be seen from the above that the light-emitting element of the present invention has a light-blocking layer disposed on the periphery of the high-transmittance encapsulation material, and the light-blocking layer has openings to allow light to pass through, so that the light from the light-emitting element can be concentrated and emitted through the openings. The inner layer of the light-blocking layer is a light-reflecting layer, which can increase the probability of light emitting from the opening to improve light utilization efficiency, and promote light mixing when the light-emitting element includes multiple light-emitting diode chips that can emit light of different colors. The outer layer of the light-blocking layer is a light-absorbing layer, which can reduce the reflectivity of ambient light, thereby reducing the interference of ambient light on the light emitted by the light-emitting element to improve contrast. When the light-emitting element of the present invention is applied in an electronic device, it can reduce the reflection of ambient light, improve the utilization rate of light, or improve the contrast of the picture. In addition, since the connection pads located on the surface of the main substrate of the electronic device are shielded by the light-emitting elements, the reflection of ambient light can also be reduced to improve image performance.
以上所述仅为本发明的实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包括在本发明的保护范围之内。The above description is only an embodiment of the present invention, and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
Claims (10)
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| US16/355,854 US11018284B2 (en) | 2018-04-19 | 2019-03-18 | Light emitting element and electronic device |
| EP19165871.5A EP3557636B1 (en) | 2018-04-19 | 2019-03-28 | Electronic device |
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