CN110453285A - Crucible cover and crucible - Google Patents
Crucible cover and crucible Download PDFInfo
- Publication number
- CN110453285A CN110453285A CN201910849940.0A CN201910849940A CN110453285A CN 110453285 A CN110453285 A CN 110453285A CN 201910849940 A CN201910849940 A CN 201910849940A CN 110453285 A CN110453285 A CN 110453285A
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- CN
- China
- Prior art keywords
- seed crystal
- crucible
- cover board
- mounting portion
- board body
- Prior art date
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- 239000013078 crystal Substances 0.000 claims abstract description 156
- 239000000463 material Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 16
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 16
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical group [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 claims description 12
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 7
- 238000003763 carbonization Methods 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical group [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 54
- 239000010439 graphite Substances 0.000 abstract description 41
- 229910002804 graphite Inorganic materials 0.000 abstract description 41
- 238000000034 method Methods 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000002178 crystalline material Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 41
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 34
- 229910010271 silicon carbide Inorganic materials 0.000 description 32
- 230000012010 growth Effects 0.000 description 26
- 229910052799 carbon Inorganic materials 0.000 description 13
- 238000000151 deposition Methods 0.000 description 11
- 238000009434 installation Methods 0.000 description 11
- 229920000297 Rayon Polymers 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 239000012071 phase Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- GQWNECFJGBQMBO-UHFFFAOYSA-N Molindone hydrochloride Chemical compound Cl.O=C1C=2C(CC)=C(C)NC=2CCC1CN1CCOCC1 GQWNECFJGBQMBO-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000021332 multicellular organism growth Effects 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- -1 tungsten carbides Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention provides a kind of crucible cover and crucibles, it is related to the technical field of crystalline material process equipment, the crucible cover includes cover board body and replaceable seed crystal mounting portion, seed crystal mounting portion is detachably connected with cover board body, seed crystal mounting portion is for installing seed crystal, crucible cover provided by the invention is by the way that seed crystal mounting portion to be detachably arranged with cover board body, in this way after seed crystal mounting portion installs seed crystal, if seed crystal bonding is unqualified, only seed crystal mounting portion can be discarded, the mode that graphite crucible lid is integrally discarded compared with prior art, cover board body of the invention still can be used, discarded material is few, production cost is saved.
Description
Technical field
The present invention relates to crystalline material technical field of processing equipment, more particularly, to a kind of crucible cover and crucible.
Background technique
SiC (silicon carbide) monocrystal material is because of its own broad stopband, high heat conductance, high breakdown electric field, high radiation preventing ability etc.
Feature, manufactured semiconductor devices can satisfy the demand to high power and intense radiation device now, be to prepare high temperature, height
Frequently, the ideal substrate material of high power and anti-radiation device, and navigate in hybrid vehicle, high voltage power transmission, LED illumination and space flight
The fields such as sky are shown up prominently, and the SiC single crystal for growing high quality is then the basis for realizing the excellent properties of these SiC base devices.
SiC single crystal does not appear in the Nature, can only obtain SiC single crystal by synthetic method.Silicon carbide at present
The method of monocrystalline mainly has physical vaporous deposition, high temperature chemical vapor deposition method, liquid phase epitaxial method etc..Wherein physical vapor is heavy
Area method develop it is most mature, and apply most common method.Specifically, physical vaporous deposition (PVT) is using heating
Sic raw material, make distillation after carbofrax material at SiC seed crystal depositing crystalline at single-crystal silicon carbide.Existing, physical vapor is heavy
Area method growth SiC single crystal (for example, 4H-SiC) generallys use graphite crucible progress, and is carried out using the carbon face (C) as aufwuchsplate
Crystal growth, usual SiC seed crystal are mounted on the crucible cover of graphite, and the fixed form of seed crystal is based on bonding mode, specifically
For be seed crystal and graphite cover are bonded together with viscose, and heat up allow viscose to solidify, to prevent seed wafer in crystal growth
Removing falls off in the process.
During being bonded or being mechanically fixed seed crystal, since the crucible cap surface machining accuracy of graphite is poor, glutinous
Gluing knot is uneven and the factors such as the deflation of adhesives in the curing process such as viscose, so that the seed crystal back side and graphite crucible lid
Between there are non-uniform gap or some stomatas, correspondingly, seed crystal is made usually to fall off in the curing process or due to seed
Existing gap is too big between the brilliant back side and graphite cover, stomata is too many, it has to which seed crystal peeling is re-started bonding.And it peels off
Graphite crucible lid one layer of viscose has been covered due to surface, seed crystal bonding can not be carried out again, do over again and throw and have stone again
The problem of technique requires is not achieved in black crucible cover height, and graphite crucible lid at this time can only just be scrapped, and production is considerably increased
Cost.
Summary of the invention
The purpose of the present invention is to provide a kind of crucible cover, with alleviate graphite crucible in the prior art cover bonding seed crystal not
After qualification, it is difficult to reuse, the technical issues of graphite crucible lid can only just be scrapped, considerably increase production cost.
The second object of the present invention is to provide a kind of crucible, be covered with alleviating graphite crucible in the prior art in bonding seed crystal
After unqualified, it is difficult to reuse, the technical issues of graphite crucible lid can only just be scrapped, considerably increase production cost.
Based on the first object of the present invention, the present invention provides crucible cover, including cover board body and replaceable seed crystal peace
Dress portion, the seed crystal mounting portion are detachably connected with the cover board body, and the seed crystal mounting portion is for installing seed crystal.
Further, the relatively described downwardly projecting setting of cover board body of the seed crystal mounting portion.
Further, the cover board body is set as metal cover board, and is provided with carburization zone on the metal cover board, described
Carburization zone at least covers the lower surface of the metal cover board.
Further, the material of the metal cover board is tantalum, and the carburization zone is layer of tantalum carbide；Or,
The material of the metal cover board is niobium, and the carburization zone is niobium carbide layer；Or,
The material of the metal cover board is tungsten, and the carburization zone is carbide layers.
Further, the carburization zone is to be formed on the surface of the metal cover board by carbonization.
Further, the material of the cover board body is tantalum carbide, niobium carbide or tungsten carbide.
Further, the mounting hole of perforation is provided in the middle part of the cover board body, the seed crystal mounting portion is mounted on institute
It states in mounting hole, and the seed crystal mounting portion can be tightly connected with the hole wall of the mounting hole.
Further, the middle part of the cover board body is downwardly projecting ring wall, and the seed crystal mounting portion is set in the ring
In wall, the seed crystal mounting portion and the ring wall are bonded, and the ring wall is protruded in the lower surface of the seed crystal mounting portion.
Further, the lower end of the ring wall is extended towards the mounting hole chuck；
The upper end of the seed crystal mounting portion is outward extended with card convex, and the card convex is fastened in the chuck.
Based on the second object of the present invention, the present invention provides a kind of crucible, including crucible body and provided by the invention
Crucible cover, the cover board body, which can cover, to be located in the crucible body.
Crucible cover provided by the invention, including cover board body and replaceable seed crystal mounting portion, the seed crystal mounting portion
It is detachably connected with the cover board body, the seed crystal mounting portion is for installing seed crystal.Crucible cover provided by the invention pass through by
Seed crystal mounting portion is detachably arranged with cover board body, in this way after seed crystal mounting portion installs seed crystal, if seed crystal bonding is unqualified,
Only seed crystal mounting portion can be discarded, compared with prior art, the mode that graphite crucible lid is integrally discarded, the lid of crucible cover of the present invention
Plate ontology still can be used, and discarded material is few, save production cost.
Crucible provided by the invention, including crucible body and crucible cover provided by the invention have and provide with the present invention
The identical beneficial effect of crucible cover, also can intuitively be obtained by the description of the beneficial effect to crucible cover of the present invention, In
This is no longer described in detail.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the schematic diagram of crucible cover provided in an embodiment of the present invention；
Fig. 2 cuts open schematic diagram for Fig. 1's；
Fig. 3 is the schematic cross-sectional view of the cover board body of crucible cover provided in an embodiment of the present invention；
Fig. 4 is the schematic cross-sectional view of the seed crystal mounting portion of crucible cover provided in an embodiment of the present invention.
Icon: 100- cover board body；110- mounting hole；120- ring wall；121- chuck；200- seed crystal mounting portion；In 210-
Empty slot；220- card convex.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with embodiment, it is clear that described reality
Applying example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, the common skill in this field
Art personnel every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
In the prior art, SiC single crystal can be prepared by physical vaporous deposition, and physical vaporous deposition (PVT) is adopted
With mid-frequency induction heating, high-density graphite crucible is as heater.SiC powder is placed on graphite crucible bottom, and SiC seed crystal is in
At the top of graphite crucible, growth 4H-SiC (a kind of structure type of silicon carbide) generallys use (carbon) face C as aufwuchsplate and carries out crystalline substance
Body growth.Make temperature at SiC raw material area higher by adjusting the insulating layer outside crucible, and temperature at the crucible cover seed crystal of top
It is lower.Then silicon carbide powder must be directly sublimed into Si (silicon), Si under 2100 DEG C of temperatures above and environment under low pressure2C (carbon
Change two silicon), SiC2Gases such as (two silicon carbide), and be transferred to from the seed crystal of lower temperature region along temperature gradient from high-temperature region
Depositing crystalline is at single-crystal silicon carbide.When preparing single-crystal silicon carbide using physical vaporous deposition, need seed crystal being bonded in stone
On black crucible cover.In practical applications, it often will appear seed crystal and cover the undesirable or seed crystal of bonding from stone in graphite crucible
The case where being fallen on black crucible cover, at this point, it is viscous that seed crystal can not be carried out again since graphite crucible lid has covered one layer of viscose
It connects, does over again and throw and have the problem of technique requirement is not achieved in graphite crucible lid height again, graphite crucible lid at this time can only just be reported
It gives up, considerably increases the cost of production.
In view of the above-mentioned problems, participating in shown in FIG. 1 to FIG. 4, the embodiment of the present invention provides a kind of crucible cover, including cover board body
100 and seed crystal mounting portion 200, seed crystal mounting portion 200 and 100 split settings of cover board body, seed crystal mounting portion 200 are dismountable
It is mounted on cover board body 100 namely seed crystal mounting portion 200 is replaceable, seed crystal mounting portion 200 is for installing seed crystal.
Wherein, cover board body 100 is used to be attached with the opening sidewalls of crucible, is closed in the opening of crucible with lid.Seed
Brilliant mounting portion 200 generally selects graphite material, to guarantee the carbon face growing environment of carborundum crystals.
Seed crystal mounting portion 200 can be connect by diversified forms with cover board body 100, for example, seed crystal mounting portion 200 can pass through
The form of glue bonding is mounted on cover board body 100, for another example what seed crystal mounting portion 200 can be connected by way of clamping
On cover board body 100.
It is understood that when preparing single-crystal silicon carbide using physical vaporous deposition, seed crystal mounting portion 200 and cover board
The connection of ontology 100, due to not interfering with the bonding of seed crystal, so the installation requirement between both is not high, so can be anti-
Multiple repeatedly installation, so that cover board body 100 is reusable.As it can be seen that crucible cover of the embodiment of the present invention is by by seed crystal mounting portion
200, can if seed crystal bonding is unqualified in this way after seed crystal mounting portion 200 installs seed crystal with 100 split settings of cover board body
Only seed crystal mounting portion 200 is discarded, compared with prior art, the mode that whole graphite crucible lid is discarded, crucible cover of the present invention
Cover board body 100 still can be used, and discarded material is few, save production cost.
Existing graphite crucible lid is usually whole to be prepared by graphite, and graphite crucible lid can be anti-with the Si (silicon) in gas phase
Polycrystalline Si C (silicon carbide) should be generated, thus one layer of SiC polycrystal layer can occur in graphite crucible cap surface.The growth of polycrystal layer
Speed is greater than the speed of growth of monocrystalline, therefore polycrystal layer will surround seed crystal quickly so that seed crystal radial growth by
Limitation, crystal are difficult to be further amplified.After growth, since crystal is surrounded by the polycrystal layer that graphite crucible covers and bond
Together, this allows for that this process of crystal is taken to become very difficult, and in this mistake with fracture polycrystal layer and crystal
The cracking for exciting crystal internal stress to result in crystal due to instrument collides with crystal is tended in journey, crystal once cracks
Just it entirely scraps, all effort are irrevocably lost.For this problem, as a preferred embodiment of the present invention, the present embodiment
The cover board body 100 of crucible cover is set as metal cover board, and carburization zone is provided on metal cover board, and carburization zone at least covers metal
The lower surface of cover board.
It is understood that the lower surface of metal cover board refers to side of the metal cover board towards the inside in crucible, gold
Belonging to cover board only can be provided with carburization zone in lower surface, can also be respectively provided with carburization zone on the whole outer surface of metal cover board.
Specifically, the material of metal cover board can be tantalum, carburization zone is layer of tantalum carbide；Or, the material of metal cover board is niobium,
Carburization zone is niobium carbide layer；Or, the material of metal cover board is tungsten, carburization zone is carbide layers.
Wherein, either layer of tantalum carbide, niobium carbide layer or carbide layers can be to pass through on corresponding metal cover board
Carbonization is pre-processed and is obtained.
It is understood that metal needs used in metal cover board want energy high temperature resistant, such as tantalum, niobium or tungsten etc., the table of metal cover board
Face is tantalum carbide, niobium carbide or tungsten carbide by pretreatment carbonated transition, and tantalum carbide, niobium carbide or tungsten carbide have very in high temperature
Strong stability is difficult to be reacted with the gas phase in crucible.Accordingly polycrystal layer will not be at the beginning of the growth in carborundum crystals
Phase is formed, and ensure that the early growth period of carborundum crystals not will receive the limitation of polycrystal layer, and since polycrystal layer will not be in life
Long initial stage is formed, and formation is slower, so seed crystal can get rid of the encirclement of polycrystal layer, is grown simultaneously to radial with axial.
It should be noted that cover board body 100 is not limited to the above-mentioned form in the outside of metal cover board setting carburization zone,
The material that can be cover board body 100 is directly selected as forms such as tantalum carbide, niobium carbide or tungsten carbides.
For the convenience of description, being described so that cover board body 100 is setting layer of tantalum carbide as an example in the present embodiment.
Although ensure that the early growth period of carborundum crystals not will receive the limit of polycrystal layer using the form of metal cover board
System, namely ensure that the growth of lesser carborundum crystals, but when growing biggish monocrystalline, since growth time is longer,
During the growth process, the C in gas phase (carbon) can be adsorbed and is diffused into layer of tantalum carbide, in this way after a period of time, layer of tantalum carbide
Surface layer will assemble a part of C (carbon), such carbon will react with Si (silicon) and form SiC polycrystal layer, to influence list
The growth of brilliant silicon carbide.For this problem, as another preferred embodiment of the invention, the seed crystal of the present embodiment crucible cover is pacified
The downwardly projecting installation of 200 opposing cover plates ontology of dress portion 100, so that the seed crystal installation position of seed crystal mounting portion 200 and cover board body 100
Following table face interval setting.
As shown in the figures 1 and 2, internal stretch from the present embodiment seed crystal mounting portion 200 to crucible, seed crystal be mounted on seed crystal installation
On the lower end surface in portion 200, that is, the lower end surface of seed crystal mounting portion 200 forms seed crystal installation position, the lower end of seed crystal mounting portion 200
Face and the interval of cover board body 100 are arranged.
It should be understood that the seed crystal installation position of seed crystal mounting portion 200 and the interval of cover board body 100 are arranged, accordingly even when
It is subsequent to be caused due to tantalum carbide surface aggregation carbon when forming silicon carbide polycrystal layer on cover board body 100, due to polycrystal layer
Growth position and seed crystal location interval be arranged, correspondingly, polycrystal layer will not cause shadow to seeded growth single-crystal silicon carbide
It rings.
It is understood that in the prior art, may also there is researcher to change the structure of graphite crucible lid, so that vertical
On direction, the graphite member for cohering seed crystal is protruded to growth raw material region (in crucible), at this point, graphite protrusion surrounds the area of crystal
Domain exposure in growth chamber, gaseous component not only deposition and crystallization on growth interface at this time, and will be in its neighboring area (stone
The position etc. for not installing seed crystal of ink protrusion and cover board) it deposits and crystallizes, generate carbonization policrystalline silicon.Since polycrystalline grows speed
Rate just encloses the graphite protrusion part of crucible cover at later stages and grows up package still much larger than the speed of growth of monocrystalline
Firmly crystal, although polycrystalline can be avoided to wrap crystal by reducing growth time, this measure results in a large amount of carbon
The waste of SiClx raw material also constrains the yield of single furnace carborundum crystals.And the present invention uses the cover board body 100 of metalline
Compared to existing directly that graphite crucible lid is downwardly projecting form, on the one hand solves the dosage of graphite, secondly as polycrystal layer
Formation it is slower, so formed carbonization policrystalline silicon it is less, solve the problems, such as sic raw material waste；Also, due to polycrystalline
The formation of layer is slower, and the seed crystal installation position of graphite member directlys adopt graphite material compared with the protrusion spacing of cover board body 100
The protrusion spacing of crucible cover want small, thus, the present embodiment single-crystal silicon carbide has bigger growing space, improves single furnace carbon
The yield of SiClx crystal.
As shown in Figure 1 to 4, the specific installation form downwardly projecting as seed crystal mounting portion 200 of the present invention, cover board body
100 middle part is provided with the mounting hole 110 of perforation, and seed crystal mounting portion 200 is mounted in mounting hole 110, and seed crystal mounting portion 200
It can be tightly connected with the hole wall of mounting hole 110.
Specifically, seed crystal mounting portion 200 is directly inserted into mounting hole 110, then with 110 hole wall of graphite mounting hole
It is bonded by glue.
It is understood that being provided with 110 one side of mounting hole of perforation in the middle part of the ontology of cover board reduces cover board
Consumptive material has saved cost, reduces the weight of crucible cover, while also facilitating the installation of seed crystal mounting portion 200.
Specifically, seed crystal mounting portion 200 may be provided at the middle part of cover board body 100.Such as shown in Fig. 1 or 2, cover board body
100 be annular, and seed crystal mounting portion 200 is arranged in the annular space of the cover board body 100 of annular.
As another kind of specific installation form of seed crystal mounting portion 200 of the present invention, as shown in Figure 2 to 4, the present embodiment
The cover board body 100 of crucible cover is downwardly projecting ring wall 120, is mounting hole 110 in ring wall 120, seed crystal mounting portion 200 is set in
In ring wall 120, and it is Nian Jie with ring wall 120, and ring wall 120 is protruded in the lower surface of seed crystal mounting portion 200.
Wherein, same material can be used in ring wall 120 and cover board body 100, it is to be understood that ring wall 120 is to downward
It stretches, corresponding seed crystal mounting portion 200 can directly be connect with ring wall 120, and it is easy to connect, and ring wall extends downwardly, corresponding seed
The height of brilliant mounting portion 200 can be reduced accordingly, so that reduce seed crystal mounting portion 200 uses material.
Specifically, as shown in Figure 2 to 4, the lower end of ring wall 120 extends internally towards mounting hole 110 is provided with chuck
121；The upper end of seed crystal mounting portion 200 is outward extended with card convex 220, and card convex 220 is fastened in chuck 121.
It should be noted that glue can be applied on ring wall 120, when the card convex 220 of seed crystal mounting portion 200 is caught in chuck 121,
The two is fixedly connected.
As shown in figure 4, the middle and upper part of seed crystal mounting portion 200 may be provided with to be connected with mounting hole 110 in order to save graphite consumptive material
Logical hollow groove 210, wherein the lower end of hollow groove 210 should be graphite grazing structure.For the crucible of stock size, this reality
The metal cover board diameter (outer diameter) for applying example is 140mm~180mm, and thickness (radial direction shown in FIG. 1) is 4mm~8mm, peace
The aperture for filling hole 110 is 60mm~100mm；The outer diameter of ring wall 120 is 80mm-120mm, highly (shown in FIG. 1 for 6mm-11mm
Upper and lower distance), the thickness (distance of annular radial shown in Fig. 2) of side wall and the thickness (radial direction shown in FIG. 1 of card convex 220
Distance) be 1.5mm~3.5mm.First card convex 220 can extend to 110 direction of mounting hole and (show in figure) namely mounting hole
110 220 position of the first card convex aperture it is smaller, mounting hole 110 be up big and down small variable diameter hole, in the position of the first card convex 220
It sets, the aperture of mounting hole can be 45mm~75mm；The outer diameter of card convex 220 is 60mm~100mm, and thickness is (shown in FIG. 1 radial
Distance) it is 3mm~7mm, the outer diameter of seed crystal mounting portion 200 is 50mm~90mm, and the height of card convex 220 is 18mm~24mm, seed
The side wall and bottom thickness of brilliant mounting portion 200 are 1.5mm~5.5mm.
Seed crystal mounting portion 200 when in use, is bonded with by the present embodiment crucible cover according to normal seed crystal technique for sticking first
Then seed crystal is uniformly coated with viscose in the bottom of the first chuck 121 of cover board body 100, rapidly by seed crystal before the glue solidifies
The card convex 220 of mounting portion 200 is put into from the chuck 121 of ring wall 120 from the upper end of mounting hole, and is placed into bottom and is pressed and sealed,
Viscose is coated again in crucible top edge again after viscose solidification, and entire crucible cover is placed on crucible top compacting together
Sealing.
One specific application example of the present embodiment crucible cover is as follows:
The cover board body of bonding seed crystal is sealed with crucible, around growth crucible, top, bottom can wrap up 1~4
Growth crucible, is then put into long crystal furnace by the graphite soft felt insulating layer of thickness degree 5mm~10mm, is evacuated down to pressure first and exists
5*10-2Mbar (pressure unit) controls pressure under 1mbar~50mbar environment hereinafter, being filled with argon gas, the water-cooled line of induction
Circle is powered, and heats graphite crucible with electromagnetic induction principle, when heating temperature reaches 2100 DEG C or more, silicon carbide powder starts to distil
Become Si, Si2C、SiC2Equal gases, and be transferred to from the seed crystal of lower temperature region along temperature gradient from high-temperature region and deposit knot
Crystalline substance forms single-crystal silicon carbide, by 5~10 days depositing crystalline time, completes silicon carbide monocrystal growth.On cover board body 100
Polycrystal layer is with a thickness of 4.5mm-5.5mm, and polycrystalline does not wrap up crystal, and there are also 1.5mm-2.5mm apart from crystal root for polycrystal layer, and
The crystal of same time was grown with graphite crucible lid in the past, polycrystal layer thickness is up to 9.5mm-13.5mm, and polycrystal layer is spread to
Crystal bottom will superscribe crystal.
By the Application Example it is found that using crucible cover of the invention for that can solve when growing single-crystal silicon carbide
Crystal difficulty and crystal problem easy to crack are taken caused by the polycrystal layer package crystal certainly grown on lid, and for being bonded seed crystal
The production cost of graphite member reduce 55%-80%.
In conclusion the present embodiment crucible cover a part is the cover board body 100 of the metal types of middle part hollow out, another portion
It is divided into the intermediate seed crystal mounting portion 200 protruded for bonding seed crystal, the seed crystal mounting portion 200 that centre is protruded is simple due to structure
And it is smaller, so processing cost is lower, will not be caused too being scrapped during seed crystal bonding because of bonding failure
Big production cost loss.Also, the cover board body 100 of tantalum carbide, niobium carbide or tungsten carbide property has very strong stability,
It is difficult to be reacted with the gas phase in crucible.Although the carbon in gas phase can adsorb and be diffused into tantalum carbide, niobium carbide or tungsten carbide
In, after a period of time, the surface layer of tantalum carbide, niobium carbide or tungsten carbide will assemble a part of carbon, such carbon will be anti-with Si
It answers and forms SiC polycrystal layer, but since these polycrystal layers will not be formed in early growth period, and formation is slower, so seed crystal can
To get rid of the encirclement of polycrystal layer, grown simultaneously to radial with axial.And cover board body 100 can be gone completely by subsequent processing
Except the SiC polycrystalline of deposition, accomplishes that cover board body 100 is reused, saved cost.
The embodiment of the present invention also provides a kind of crucible, the crucible cover including crucible body and with crucible body cooperation, lid
Plate ontology 100 can be covered and is located in crucible body.Specific cover board body 100 can be sealed by the opening of viscose and crucible body
Connection.
Crucible of the embodiment of the present invention has crucible cover provided in an embodiment of the present invention, with crucible cover of the embodiment of the present invention
Beneficial effect, for details, reference can be made to the descriptions to crucible cover embodiment, and details are not described herein.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of crucible cover, which is characterized in that including cover board body and replaceable seed crystal mounting portion, the seed crystal mounting portion
It is detachably connected with the cover board body, the seed crystal mounting portion is for installing seed crystal.
2. crucible cover according to claim 1, which is characterized in that the relatively described cover board body of seed crystal mounting portion is downward
Protrusion setting.
3. crucible cover according to claim 1, which is characterized in that the cover board body is set as metal cover board, and described
Carburization zone is provided on metal cover board, the carburization zone at least covers the lower surface of the metal cover board.
4. crucible cover according to claim 3, which is characterized in that the material of the metal cover board is tantalum, the carburization zone
For layer of tantalum carbide；Or,
The material of the metal cover board is niobium, and the carburization zone is niobium carbide layer；Or,
The material of the metal cover board is tungsten, and the carburization zone is carbide layers.
5. crucible cover according to claim 3, which is characterized in that the carburization zone is logical on the surface of the metal cover board
It crosses carbonization and is formed.
6. crucible cover according to claim 1, which is characterized in that the material of the cover board body is tantalum carbide, niobium carbide
Or tungsten carbide.
7. crucible cover according to claim 1-6, which is characterized in that be provided with and pass through in the middle part of the cover board body
Logical mounting hole, the seed crystal mounting portion is installed in the mounting hole, and the seed crystal mounting portion can be with the mounting hole
Hole wall be tightly connected.
8. crucible cover according to claim 7, which is characterized in that the middle part of the cover board body is downwardly projecting ring wall,
The seed crystal mounting portion is set in the ring wall, and the seed crystal mounting portion and the ring wall bond, and the seed crystal mounting portion
Lower surface protrude the ring wall.
9. crucible cover according to claim 8, which is characterized in that inwardly prolong towards the mounting hole lower end of the ring wall
It stretches and is provided with chuck；
The upper end of the seed crystal mounting portion is outward extended with card convex, and the card convex is fastened in the chuck.
10. a kind of crucible, which is characterized in that described including crucible body and the described in any item crucible covers of claim 1-9
Cover board body, which can cover, to be located in the crucible body.
Priority Applications (1)
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| CN201910849940.0A CN110453285A (en) | 2019-09-09 | 2019-09-09 | Crucible cover and crucible |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910849940.0A CN110453285A (en) | 2019-09-09 | 2019-09-09 | Crucible cover and crucible |
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| CN201910849940.0A Pending CN110453285A (en) | 2019-09-09 | 2019-09-09 | Crucible cover and crucible |
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