CN110534610A - Hull cell preparation facilities and preparation method - Google Patents
Hull cell preparation facilities and preparation method Download PDFInfo
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- 238000004804 winding Methods 0.000 claims abstract description 29
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/137—Batch treatment of the devices
- H10F71/1375—Apparatus for automatic interconnection of photovoltaic cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明薄膜电池技术领域,提出一种薄膜电池制备装置,该薄膜电池制备装置包括镀膜机以及划槽机,镀膜机适于以卷对卷工艺镀膜形成薄膜电池的各层材料层;划槽机集成于镀膜机的收卷端,用于在对各层所述材料层收卷的同时,对需要划槽的各层所述材料层进行划槽。使用该薄膜电池制备装置使得薄膜电池在镀膜过程中即可完成划线互联,从而避免额外的表面电极制备工艺,使薄膜电池的生产效率进一步提升和制造成本进一步降低。
In the technical field of thin film batteries of the present invention, a thin film battery preparation device is proposed. The thin film battery preparation device includes a coating machine and a grooving machine. The coating machine is suitable for forming each layer of material layers of a thin film battery by coating a roll-to-roll process; the grooving machine It is integrated in the winding end of the coating machine, and is used for scribing each layer of the material layer that needs scribing while winding up each layer of the material layer. The use of the thin film battery preparation device enables the thin film battery to complete scribing and interconnection during the coating process, thereby avoiding an additional surface electrode preparation process, further improving the production efficiency of the thin film battery and further reducing the manufacturing cost.
Description
技术领域technical field
本发明涉及薄膜电池技术领域,尤其涉及一种薄膜电池制备装置和薄膜电池制备方法。The invention relates to the technical field of thin film batteries, in particular to a thin film battery preparation device and a thin film battery preparation method.
背景技术Background technique
卷对卷是一种高效的制备柔性衬底薄膜电池的产业化工艺手段,如非微晶硅、碲化镉、铜铟镓硒等薄膜电池均有采用卷对卷工艺路线形成。参照图1所示的现有技术的薄膜电池的结构示意图;需要在薄膜电池的透明导电层上采用额外的表面电极制备工艺完成电池互联,如传统的丝网印刷电极互联,ICI(Integrated cell interconnect,集成单元互连)电极互联等等。这些额外的互联工艺由于工艺复杂,耗时耗料,使薄膜电池的制造成本增加,弱化了卷对卷工艺的产业竞争力。Roll-to-roll is an efficient industrialized process for preparing thin-film batteries with flexible substrates. Thin-film batteries such as non-microcrystalline silicon, cadmium telluride, and copper indium gallium selenide are all formed by roll-to-roll process routes. Referring to the schematic structural view of the prior art thin-film battery shown in Figure 1; it is necessary to adopt an additional surface electrode preparation process on the transparent conductive layer of the thin-film battery to complete the battery interconnection, such as the traditional screen printing electrode interconnection, ICI (Integrated cell interconnect , integrated unit interconnection) electrode interconnection and so on. These additional interconnection processes are complex, time-consuming and material-consuming, which increases the manufacturing cost of thin-film batteries and weakens the industrial competitiveness of the roll-to-roll process.
因此,有必要研究一种新的薄膜电池制备装置和薄膜电池制备方法。Therefore, it is necessary to study a new thin-film battery preparation device and thin-film battery preparation method.
所述背景技术部分公开的上述信息仅用于加强对本发明的背景的理解,因此它可以包括不构成对本领域普通技术人员已知的现有技术的信息。The above information disclosed in this Background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known in the art to a person of ordinary skill in the art.
发明内容Contents of the invention
本发明的目的在于克服上述现有技术的采用额外的表面电极制备工艺完成电池互联的不足,提供一种避免额外的表面电极制备工艺的薄膜电池制备装置和薄膜电池制备方法。The purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art of using an additional surface electrode preparation process to complete battery interconnection, and provide a thin film battery preparation device and a thin film battery preparation method that avoid the additional surface electrode preparation process.
本发明的额外方面和优点将部分地在下面的描述中阐述,并且部分地将从描述中变得显然,或者可以通过本发明的实践而习得。Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
根据本公开的一个方面,提供一种薄膜电池制备装置,包括:According to one aspect of the present disclosure, there is provided a thin film battery manufacturing device, comprising:
镀膜机,适于以卷对卷工艺镀膜形成薄膜电池的各层材料层;Coating machine, suitable for forming various material layers of thin-film batteries by coating in a roll-to-roll process;
划槽机,集成于所述镀膜机的收卷端,用于在对各层所述材料层收卷的同时,对需要划槽的各层所述材料层进行划槽。The scribing machine is integrated at the winding end of the coating machine, and is used for scribing the material layers that need scribing while rewinding the material layers of each layer.
在本公开的一种示例性实施例中,所述划槽机包括:In an exemplary embodiment of the present disclosure, the scoring machine includes:
划槽排针,用于对各层所述材料层进行划槽;Grooving needle row, used for grooving the material layer of each layer;
施压机构,用于给所述划槽排针施压。The pressure applying mechanism is used for applying pressure to the grooved needle row.
在本公开的一种示例性实施例中,所述划槽机还包括:In an exemplary embodiment of the present disclosure, the scoring machine further includes:
压力传感器,设于所述划槽排针与所述施压机构之间,用于检测所述施压机构给所述划槽排针施加的压力值。The pressure sensor is arranged between the grooved needle row and the pressure applying mechanism, and is used to detect the pressure applied by the pressure applying mechanism to the grooved needle row.
在本公开的一种示例性实施例中,所述划槽机还包括:In an exemplary embodiment of the present disclosure, the scoring machine further includes:
控制单元,用于根据所述材料层的不同控制施压机构给划槽排针施加不同的压力,以及根据压力传感器检测的压力值调节施压机构给划槽排针施加的压力。The control unit is used to control the pressure applying mechanism to apply different pressures to the grooved needle row according to the different material layers, and adjust the pressure applied by the pressure applying mechanism to the grooved needle row according to the pressure value detected by the pressure sensor.
在本公开的一种示例性实施例中,划槽排针包括:In an exemplary embodiment of the present disclosure, the grooved needle header includes:
安装板,具有相对设置的第一面和第二面;a mounting plate having oppositely disposed first and second faces;
多个划针,并列为一排设于所述第一面,每相邻两个划针之间的间距相同。A plurality of scribing needles are arranged in a row on the first surface, and the distance between every two adjacent scribing needles is the same.
在本公开的一种示例性实施例中,各个划针的宽度为20~50μm;相邻两个划针之间的间距为1mm~10mm。In an exemplary embodiment of the present disclosure, the width of each scribe needle is 20-50 μm; the distance between two adjacent scribe needles is 1 mm-10 mm.
根据本公开的一个方面,提供一种薄膜电池制备方法,包括:According to one aspect of the present disclosure, there is provided a thin film battery manufacturing method, comprising:
提供柔性绝缘衬底;Provide a flexible insulating substrate;
在所述柔性绝缘衬底上,以卷对卷工艺镀膜形成薄膜电池的各层材料层;以及On the flexible insulating substrate, each layer of material layers of the thin-film battery is formed by coating with a roll-to-roll process; and
在对各层所述材料层收卷的同时,对需要划槽的各层所述材料层进行划槽。While rewinding the material layers of each layer, grooving is performed on each material layer that needs grooving.
在本公开的一种示例性实施例中,所述镀膜与划槽步骤,包括:In an exemplary embodiment of the present disclosure, the coating and grooving steps include:
镀膜形成电池背电极金属层,在对所述电池背电极金属层进行收卷的同时,对所述电池背电极金属层进行划槽;coating to form a metal layer of the battery back electrode, and while winding the metal layer of the battery back electrode, scribing the metal layer of the battery back electrode;
镀膜形成光电转换功能层,在对所述光电转换功能层进行收卷的同时,对所述光电转换功能层进行划槽;Coating to form a photoelectric conversion functional layer, while rewinding the photoelectric conversion functional layer, grooving the photoelectric conversion functional layer;
镀膜形成透明导电层,在对所述透明导电层进行收卷的同时,对所述透明导电层进行划槽。The coated film forms a transparent conductive layer, and while the transparent conductive layer is rolled up, the transparent conductive layer is grooved.
在本公开的一种示例性实施例中,所述电池背电极金属层的划槽步骤,在所述电池背电极金属层上划出第一凹槽,使所述第一凹槽处的所述柔性绝缘衬底暴露。In an exemplary embodiment of the present disclosure, the step of scribing the metal layer of the battery back electrode is to scribe a first groove on the metal layer of the battery back electrode, so that all the grooves at the first groove The flexible insulating substrate is exposed.
在本公开的一种示例性实施例中,所述光电转换功能层的镀膜划槽步骤,使所述光电转换功能层伸入所述第一凹槽内,并在所述光电转换功能层上划出第二凹槽,使所述第二凹槽处的所述电池背电极金属层暴露。In an exemplary embodiment of the present disclosure, in the coating and scribing step of the photoelectric conversion functional layer, the photoelectric conversion functional layer extends into the first groove, and on the photoelectric conversion functional layer A second groove is drawn to expose the battery back electrode metal layer at the second groove.
在本公开的一种示例性实施例中,所述透明导电层的镀膜划槽步骤,使所述透明导电层伸入所述第二凹槽内,并在所述透明导电层以及所述光电转换功能层上划出第三凹槽,使所述第三凹槽处的所述电池背电极金属层暴露。In an exemplary embodiment of the present disclosure, in the coating and grooving step of the transparent conductive layer, the transparent conductive layer extends into the second groove, and the transparent conductive layer and the photoelectric A third groove is drawn on the conversion function layer, so that the battery back electrode metal layer at the third groove is exposed.
由上述技术方案可知,本发明具备以下优点和积极效果中的至少之一:It can be seen from the above technical solution that the present invention has at least one of the following advantages and positive effects:
本发明的薄膜电池制备装置和薄膜电池制备方法,通过镀膜机形成薄膜电池的各层材料层,划槽机集成于镀膜机的收卷端,在对各层所述材料层收卷的同时,通过划槽机对需要划槽的各层材料层进行划槽。一方面,使得电池在镀膜过程中即可完成划槽互联,从而避免额外的表面电极制备工艺。另一方面,不必在每形成一层膜层后,将其转移至划槽工位进行划槽,然后再将其转移至镀膜工位进行下层镀膜,使薄膜电池的生产效率进一步提升和制造成本进一步降低。再一方面,利用收卷时镀膜机的转动进行划槽,不必另外设置转动器驱动薄膜电池的半成品或划槽机转动,使薄膜电池制备装置的结构更为简单。In the thin-film battery manufacturing device and the thin-film battery manufacturing method of the present invention, each material layer of the thin-film battery is formed by a coating machine, and the scribing machine is integrated at the winding end of the coating machine, and while winding the material layers of each layer, Use the grooving machine to scribe the layers of material that need grooving. On the one hand, it enables the battery to complete the slit interconnection during the coating process, thereby avoiding additional surface electrode preparation processes. On the other hand, it is not necessary to transfer it to the scribing station for scribing after each layer of film is formed, and then transfer it to the coating station for lower layer coating, which further improves the production efficiency and manufacturing cost of thin-film batteries. Further decrease. On the other hand, using the rotation of the coating machine during rewinding for scribing, there is no need to install additional rotators to drive the semi-finished thin film battery or the scribing machine to rotate, which makes the structure of the thin film battery manufacturing device simpler.
附图说明Description of drawings
通过参照附图详细描述其示例实施方式,本发明的上述和其它特征及优点将变得更加明显。The above and other features and advantages of the present invention will become more apparent by describing in detail example embodiments thereof with reference to the accompanying drawings.
图1是现有技术的薄膜电池的结构示意图;Fig. 1 is the structural representation of the thin-film battery of prior art;
图2是本发明薄膜电池制备装置一实施方式的结构示意图;Fig. 2 is a schematic structural view of an embodiment of the thin film battery manufacturing device of the present invention;
图3是图1中的划槽机的结构示意图;Fig. 3 is a schematic structural view of the slotting machine in Fig. 1;
图4是本发明薄膜电池制备方法一实施方式的流程示意框图;4 is a schematic flow diagram of an embodiment of the thin film battery manufacturing method of the present invention;
图5是在柔性绝缘衬底上形成电池背电极金属层以及划槽后的结构示意图;Fig. 5 is a structural schematic diagram after forming a battery back electrode metal layer and scribing grooves on a flexible insulating substrate;
图6是在电池背电极金属层之上形成光电转换功能层的结构示意图;6 is a schematic structural view of forming a photoelectric conversion functional layer on the metal layer of the back electrode of the battery;
图7是在光电转换功能层上形成第二凹槽的结构示意图;7 is a schematic structural view of forming a second groove on the photoelectric conversion functional layer;
图8是在光电转换功能层之上形成透明导电层的结构示意图;Fig. 8 is a structural schematic diagram of forming a transparent conductive layer on the photoelectric conversion functional layer;
图9是在透明导电层以及光电转换功能层上形成第三凹槽的结构示意图。FIG. 9 is a schematic structural view of forming a third groove on the transparent conductive layer and the photoelectric conversion functional layer.
图中主要元件附图标记说明如下:The reference signs of the main components in the figure are explained as follows:
1、收卷辊;1. Rewinding roller;
2、划槽排针;21、安装板;22、划针;2. Grooving pin row; 21. Mounting plate; 22. Needle marking;
3、驱动板;3. Drive board;
4、柔性绝缘衬底;4. Flexible insulating substrate;
5、电池背电极金属层;51、第一凹槽;5. The metal layer of the battery back electrode; 51. The first groove;
6、光电转换功能层;61、第二凹槽;6. The photoelectric conversion functional layer; 61. The second groove;
7、透明导电层;71、第三凹槽;7. Transparent conductive layer; 71. The third groove;
8、压力传感器。8. Pressure sensor.
具体实施方式Detailed ways
现在将参考附图更全面地描述示例实施方式。然而,示例实施方式能够以多种形式实施,且不应被理解为限于在此阐述的实施方式;相反,提供这些实施方式使得本发明将全面和完整,并将示例实施方式的构思全面地传达给本领域的技术人员。图中相同的附图标记表示相同或类似的结构,因而将省略它们的详细描述。Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.
本示例实施方式首先提供了一种薄膜电池制备装置,参照图2所示的薄膜电池制备装置一实施方式的结构示意图;该薄膜电池制备装置可以包括镀膜机以及划槽机等等。镀膜机可以适于以卷对卷工艺镀膜形成薄膜电池的各层材料层;划槽机集成于镀膜机的收卷端,可以用于在对各层材料层收卷的同时,对需要划槽的各层所述材料层进行划槽。This exemplary embodiment firstly provides a thin film battery manufacturing device, refer to the schematic structural diagram of an embodiment of the thin film battery manufacturing device shown in FIG. 2 ; The coating machine can be adapted to form various layers of material layers of thin-film batteries by coating in a roll-to-roll process; the scribing machine is integrated at the winding end of the coating machine, and can be used to slit the required material layers while winding each layer of material layers. Each layer of the material layer is scribed.
在本示例实施方式中,镀膜机可以为卷对卷镀膜机,卷对卷镀膜机可以包括镀膜辊、收卷辊1以及放卷辊等等。In this exemplary embodiment, the coating machine may be a roll-to-roll coating machine, and the roll-to-roll coating machine may include a coating roll, a winding roll 1 , an unwinding roll, and the like.
在本示例实施方式中,划槽机可以设置在镀膜机的上方,具体为设置在收卷辊1的上方,且划槽机与收卷辊1的中心轴线可以平行设置,使划槽机能够在收卷辊1转动的时候就对收卷辊1上的材料层进行划槽。不必在每形成一层膜层后,将其转移至划槽工位进行划槽,然后再将其转移至镀膜工位进行镀膜,可以节省薄膜电池制备过程中半成品的来回转移工序,从而节省人力物力,而且提高生产效率。划槽机可以设置在收卷辊1的起始收卷的位置,使在材料层的起始位置即可对材料层进行划槽。利用收卷辊1的转动,不必另外设置转动器驱动薄膜电池的半成品或划槽机转动,使薄膜电池制备装置结构更为简单。当然,划槽机也可以设置在镀膜机的左侧、右侧或下方。In this exemplary embodiment, the scribing machine can be arranged above the coating machine, specifically above the winding roll 1, and the central axes of the scribing machine and the winding roll 1 can be arranged in parallel, so that the scribing machine can When the winding roller 1 rotates, the material layer on the winding roller 1 is grooved. It is not necessary to transfer it to the grooving station for grooving after each layer of film is formed, and then transfer it to the coating station for coating, which can save the semi-finished product transfer process in the thin film battery manufacturing process, thereby saving manpower Material resources, and improve production efficiency. The notching machine can be set at the initial winding position of the winding roller 1, so that the material layer can be notched at the initial position of the material layer. Utilizing the rotation of the winding roller 1, there is no need to set an additional rotator to drive the semi-finished product of the thin film battery or the slotting machine to rotate, so that the structure of the thin film battery preparation device is simpler. Certainly, the scribing machine can also be arranged on the left side, the right side or the bottom of the coating machine.
参照图3所示的划槽机的结构示意图;划槽机可以包括划槽排针2以及施压机构等等。划槽排针2可以用于对各层所述材料层进行划槽;施压机构可以用于给所述划槽排针2施压。Referring to the schematic structural diagram of the scribing machine shown in FIG. 3 ; the scribing machine may include a scribing needle row 2 and a pressing mechanism and the like. The scribing needle row 2 can be used for scribing each material layer; the pressure applying mechanism can be used for applying pressure to the scribing needle row 2 .
在本示例实施方式中,施压机构可以包括驱动单元(图中未示出),驱动单元的驱动端可以设置有驱动板3,驱动板3可以与划槽排针2连接,通过驱动板3可以使划槽排针2的受力均匀,使划出的多个槽的深度均匀。驱动单元可以带动驱动板3移动并给驱动板3施加压力。驱动单元可以为直线电机、电动缸、油缸、气缸等等。In this exemplary embodiment, the pressing mechanism may include a drive unit (not shown in the figure), the drive end of the drive unit may be provided with a drive plate 3, the drive plate 3 may be connected with the scribing needle header 2, and the drive plate 3 may It can make the stress of the scribed pin header 2 uniform, and make the depths of the scribed grooves uniform. The driving unit can drive the driving plate 3 to move and apply pressure to the driving plate 3 . The driving unit can be a linear motor, an electric cylinder, an oil cylinder, an air cylinder, and the like.
在本示例实施方式中,划槽排针2可以包括安装板21以及设置在安装板21上的多个划针22等等。具体而言,安装板21设置为长方形的板状,安装板21具有相对设置的第一面和第二面。多个划针22并列设置为一排,且设于安装板21的第一面。每相邻两个划针22之间的间距相同。安装板21的第二面与驱动板3连接。In this example embodiment, the scribe pin header 2 may include a mounting plate 21 and a plurality of scribe pins 22 disposed on the mounting plate 21 and the like. Specifically, the mounting plate 21 is provided in a rectangular plate shape, and the mounting plate 21 has a first surface and a second surface disposed opposite to each other. A plurality of scribe needles 22 are arranged side by side in a row, and are arranged on the first surface of the installation board 21 . The distance between every two adjacent scribe needles 22 is the same. The second surface of the mounting board 21 is connected to the driving board 3 .
在本示例实施方式中,划针22设置为与安装板21垂直的截面的形状为等腰三角形的板状,因此,划针22具有底边和两个腰边,底边一侧与安装板21固定连接,划针22的顶角部可进行划槽。当然,本领域技术人员可以理解的是,划针22的结构不限于上述描述,例如,划针22还可以设置为长条形板,并在长条形板的下部设置三角形状的划尖;划针22还可以设置为圆锥状,或圆柱状并在圆柱的顶端设置圆锥状的划尖即可。各个划针22的宽度值为大约20~50μm,具体为,划针22的针尖的宽度值为大约20~50μm;相邻两个划针22之间的间距大约为1mm~10mm。In this exemplary embodiment, the stylus 22 is arranged to have an isosceles triangular plate shape in a cross-section perpendicular to the mounting plate 21. Therefore, the scribing needle 22 has a base and two waists, and one side of the base is connected to the mounting plate. 21 is fixedly connected, and the top corner of the marking needle 22 can be scratched. Of course, those skilled in the art can understand that the structure of the stylus 22 is not limited to the above description, for example, the stylus 22 can also be set as a strip-shaped plate, and a triangular-shaped sharpening point is provided at the bottom of the strip-shaped plate; The stylus 22 can also be set in a conical shape, or a cylindrical shape and a conical sharpening point can be provided on the top of the cylinder. The width of each scribing needle 22 is about 20-50 μm, specifically, the width of the tip of the scribing needle 22 is about 20-50 μm; the distance between two adjacent scribing needles 22 is about 1 mm-10 mm.
在本示例实施方式中,在划槽排针2与施压机构之间还可以设置有多个压力传感器8,具体而言,压力传感器8可以设置在安装板21与驱动板3之间。压力传感器8可以用于检测施压机构给划槽排针2施加的压力。压力传感器8可以为电容式压力传感器、变磁阻式压力传感器(变磁阻式传感器、差动变压器式压力传感器)、霍耳式压力传感器、光纤式压力传感器、谐振式压力传感器等等。当然,压力传感器8也可以设置为一个。In this example embodiment, a plurality of pressure sensors 8 may also be arranged between the scribing needle header 2 and the pressing mechanism, specifically, the pressure sensors 8 may be arranged between the mounting board 21 and the driving board 3 . The pressure sensor 8 can be used to detect the pressure exerted by the pressure applying mechanism on the scribing needle header 2 . The pressure sensor 8 can be a capacitive pressure sensor, a variable reluctance pressure sensor (variable reluctance sensor, differential transformer pressure sensor), a Hall pressure sensor, an optical fiber pressure sensor, a resonant pressure sensor and the like. Of course, one pressure sensor 8 can also be provided.
划槽机还可以包括控制单元,控制单元可以用于根据材料层的不同控制施压机构给划槽排针2施加不同的压力,以及根据压力传感器8检测的压力调节施压机构给划槽排针2施加的压力。The scribing machine can also include a control unit, which can be used to apply different pressures to the scribing row needle 2 according to different control pressure mechanisms of material layers, and to adjust the pressure applying mechanism to the scribing row according to the pressure detected by the pressure sensor 8. Pressure applied by needle 2.
在本示例实施方式中,由于薄膜电池各材料层形成的先后是有顺序,而且顺序是固定的,再者同一类产品各材料层的形成厚度是一样的。因此,可以在控制单元内设定第一次需要控制施压机构给划槽排针2施加的压力值为多少,第二次施加的压力值为多少,第三次施加的压力值为多少,如此依次设置每次施加的压力值为多少。控制单元根据划槽次序控制施压机需要施加的压力。In this exemplary embodiment, since the material layers of the thin film battery are formed in sequence, and the order is fixed, and the thickness of each material layer of the same type of product is the same. Therefore, it is possible to set in the control unit how much pressure the pressure applying mechanism needs to apply to the scribing needle row 2 for the first time, how much pressure is applied for the second time, and how much pressure is applied for the third time. In this way, set the pressure value applied each time in turn. The control unit controls the pressure that the press needs to apply according to the grooving sequence.
压力传感器8连接于控制单元的信号输入端,控制单元的信号输出端连接于驱动单元的控制端。在控制单元内存储有对每一材料层进行划槽时需要对划槽排针2施加的设定压力值。在施压机给划槽排针2施加压力后,压力传感器8会检测到施压机给划槽排针2施加的压力值,该压力值为检测压力值。控制单元将设定压力值与检测压力值进行比较,当设定压力值大于检测压力值时,控制单元控制施压机增加给划槽排针2施加的压力;当设定压力值小于检测压力值时,控制单元控制施压机减小给划槽排针2施加的压力。通过压力传感器8和控制单元可以实现闭环控制,提高控制精度,从而使划槽的深度一致,提高产品的一致性和合格率。The pressure sensor 8 is connected to the signal input end of the control unit, and the signal output end of the control unit is connected to the control end of the drive unit. The set pressure value that needs to be applied to the scribing needle header 2 when scribing each material layer is stored in the control unit. After the press machine applies pressure to the grooved needle header 2, the pressure sensor 8 will detect the pressure value applied by the pressure machine to the grooved needle header 2, and the pressure value is the detected pressure value. The control unit compares the set pressure value with the detection pressure value. When the set pressure value is greater than the detection pressure value, the control unit controls the press machine to increase the pressure applied to the groove needle row 2; when the set pressure value is lower than the detection pressure value value, the control unit controls the press machine to reduce the pressure applied to the grooved needle header 2. The closed-loop control can be realized through the pressure sensor 8 and the control unit, and the control accuracy can be improved, so that the depth of the scribing can be consistent, and the consistency and pass rate of products can be improved.
进一步的,本示例实施方式还提供了一种薄膜电池制备方法,参照图4所示的本发明薄膜电池制备方法一实施方式的流程示意框图;该薄膜电池制备方法可以包括以下步骤:Further, this exemplary embodiment also provides a method for preparing a thin film battery. Referring to FIG. 4 , a schematic flow diagram of an embodiment of the method for preparing a thin film battery of the present invention is shown; the method for preparing a thin film battery may include the following steps:
步骤S10,提供柔性绝缘衬底。Step S10, providing a flexible insulating substrate.
步骤S20,在所述柔性绝缘衬底上,以卷对卷工艺镀膜形成薄膜电池的各层材料层。Step S20 , on the flexible insulating substrate, each material layer of the thin-film battery is formed by coating in a roll-to-roll process.
步骤S30,在对各层所述材料层收卷的同时,对需要划槽的各层所述材料层进行划槽。In step S30 , while rewinding the material layers of each layer, scribing is performed on each material layer that needs scribing.
参照图5~图9所示结构,上述镀膜与划槽步骤可以包括:Referring to the structures shown in Figures 5 to 9, the above coating and grooving steps may include:
镀膜形成电池背电极金属层,在对电池背电极金属层5进行收卷的同时对电池背电极金属层5进行划槽。The plating film forms the metal layer of the battery back electrode, and the metal layer 5 of the battery back electrode is scribed while winding up the battery back electrode metal layer 5 .
镀膜形成光电转换功能层,在对光电转换功能层6进行收卷的同时对光电转换功能层6进行划槽。The photoelectric conversion functional layer is formed by coating, and the photoelectric conversion functional layer 6 is scribed while winding the photoelectric conversion functional layer 6 .
镀膜形成透明导电层,在对透明导电层7进行收卷的同时对透明导电层7进行划槽。The coating forms a transparent conductive layer, and the transparent conductive layer 7 is grooved while winding the transparent conductive layer 7 .
下面对上述镀膜与划槽步骤进行详细说明。The above-mentioned coating and grooving steps will be described in detail below.
镀膜形成电池背电极金属层,在对电池背电极金属层5进行收卷的同时对电池背电极金属层5进行划槽。The plating film forms the metal layer of the battery back electrode, and the metal layer 5 of the battery back electrode is scribed while winding up the battery back electrode metal layer 5 .
在本示例实施方式中,首先,形成柔性绝缘衬底4;柔性绝缘衬底4可以为PI(聚酰亚胺)衬底和带有氮化硅涂层的不锈钢衬底等等。在柔性绝缘衬底4之上形成电池背电极金属层5,电池背电极金属层5可以为Mo金属层、Cu金属层、银金属层等等。然后,在通过收卷辊1对电池背电极金属层5进行收卷的同时,通过划槽机在电池背电极金属层5上划出第一凹槽51,使第一凹槽51处的柔性绝缘衬底4暴露,即第一凹槽51的深度值大于或等于电池背电极金属层5的厚度值。In this example embodiment, first, a flexible insulating substrate 4 is formed; the flexible insulating substrate 4 may be a PI (polyimide) substrate, a stainless steel substrate with a silicon nitride coating, and the like. A battery back electrode metal layer 5 is formed on the flexible insulating substrate 4, and the battery back electrode metal layer 5 may be a Mo metal layer, a Cu metal layer, a silver metal layer, and the like. Then, while the battery back electrode metal layer 5 is being wound up by the winding roller 1, the first groove 51 is drawn on the battery back electrode metal layer 5 by a slotting machine, so that the flexibility at the first groove 51 is The insulating substrate 4 is exposed, that is, the depth of the first groove 51 is greater than or equal to the thickness of the battery back electrode metal layer 5 .
参照图5所示的在柔性绝缘衬底4上形成电池背电极金属层5的结构示意图。镀膜形成光电转换功能层,在对光电转换功能层6进行收卷的同时对光电转换功能层6进行划槽。Referring to FIG. 5 , it is a schematic diagram showing the formation of the battery back electrode metal layer 5 on the flexible insulating substrate 4 . The photoelectric conversion functional layer is formed by coating, and the photoelectric conversion functional layer 6 is scribed while winding the photoelectric conversion functional layer 6 .
参照图6所示的在电池背电极金属层5之上形成光电转换功能层6的结构示意图。在电池背电极金属层5之上形成光电转换功能层6,光电转换功能层6可以为非微晶硅薄膜p-n结功能层、铜铟镓硒异质结功能层、碲化镉异质结功能层、砷化镓p-n结功能层、钙钛矿/电子空穴传输功能层等等。光电转换功能层6伸入第一凹槽51内,使光电转换功能层6与柔性绝缘衬底4连接。Referring to FIG. 6 , it is a schematic structural diagram of forming a photoelectric conversion functional layer 6 on the battery back electrode metal layer 5 . A photoelectric conversion functional layer 6 is formed on the back electrode metal layer 5 of the battery. The photoelectric conversion functional layer 6 can be an amorphous silicon thin film p-n junction functional layer, a copper indium gallium selenide heterojunction functional layer, or a cadmium telluride heterojunction functional layer. layer, gallium arsenide p-n junction functional layer, perovskite/electron hole transport functional layer, etc. The photoelectric conversion functional layer 6 extends into the first groove 51 , so that the photoelectric conversion functional layer 6 is connected to the flexible insulating substrate 4 .
参照图7所示的在光电转换功能层6上形成第二凹槽61的结构示意图,在通过收卷辊1对光电转换功能层6进行收卷的同时,通过划槽机在光电转换功能层6上划出第二凹槽61,并使第二凹槽61处的电池背电极金属层5暴露,即第二凹槽61的深度值大于或等于光电转换功能层6的厚度值。第二凹槽61与第一凹槽51平行设置。第二凹槽61与第一凹槽51可以相邻设置,第一凹槽51的靠近第二凹槽61的槽壁的延长线与第二凹槽61的靠近第一凹槽51的槽壁可有重合,也可以不重合。Referring to the schematic diagram of the structure of forming the second groove 61 on the photoelectric conversion functional layer 6 shown in FIG. 6, and expose the battery back electrode metal layer 5 at the second groove 61, that is, the depth of the second groove 61 is greater than or equal to the thickness of the photoelectric conversion functional layer 6. The second groove 61 is arranged parallel to the first groove 51 . The second groove 61 and the first groove 51 can be adjacently arranged, and the extension line of the groove wall near the second groove 61 of the first groove 51 and the groove wall of the second groove 61 near the first groove 51 May or may not overlap.
镀膜形成透明导电层,在对透明导电层7进行收卷的同时对透明导电层7进行划槽。The coating forms a transparent conductive layer, and the transparent conductive layer 7 is grooved while winding the transparent conductive layer 7 .
参照图8所示的在光电转换功能层6之上形成透明导电层7的结构示意图,在光电转换功能层6之上形成透明导电层7,透明导电层7可以为透明导电氧化锌层、透明导电氧化铟层、透明导电石墨烯层等等。透明导电层7伸入第二凹槽61内,使透明导电层7与电池背电极金属层5连接。With reference to the schematic structural view of forming a transparent conductive layer 7 on the photoelectric conversion functional layer 6 shown in Figure 8, a transparent conductive layer 7 is formed on the photoelectric conversion functional layer 6, the transparent conductive layer 7 can be a transparent conductive zinc oxide layer, transparent Conductive indium oxide layer, transparent conductive graphene layer, etc. The transparent conductive layer 7 protrudes into the second groove 61 to connect the transparent conductive layer 7 with the metal layer 5 of the battery back electrode.
参照图9所示的在透明导电层7以及光电转换功能层6上形成第三凹槽71的结构示意图,在通过收卷辊1对透明导电层7进行收卷的同时,通过划槽机在透明导电层7以及光电转换功能层6上划出第三凹槽71,并使第三凹槽71处的所述电池背电极金属层5暴露,即第三凹槽71的深度值大于或等于透明导电层7和光电转换功能层6的厚度值之和。第三凹槽71与第二凹槽61平行设置。第三凹槽71可以与第二凹槽61相邻设置。第三凹槽71的靠近第二凹槽61的槽壁与第二凹槽61的靠近第三凹槽71的槽壁可有重合,也可以不重合。可以在第三凹槽71内设置电极引线。当然,在本发明的其他示例实施方式中,可以不在光电转换功能层6上形成第三凹槽71,仅在透明导电层7上形成第三凹槽71。Referring to the schematic diagram of the structure of the third groove 71 formed on the transparent conductive layer 7 and the photoelectric conversion functional layer 6 shown in FIG. A third groove 71 is drawn on the transparent conductive layer 7 and the photoelectric conversion functional layer 6, and the battery back electrode metal layer 5 at the third groove 71 is exposed, that is, the depth value of the third groove 71 is greater than or equal to The sum of the thickness values of the transparent conductive layer 7 and the photoelectric conversion functional layer 6 . The third groove 71 is arranged parallel to the second groove 61 . The third groove 71 may be disposed adjacent to the second groove 61 . The groove wall of the third groove 71 close to the second groove 61 and the groove wall of the second groove 61 close to the third groove 71 may or may not overlap. Electrode leads may be disposed within the third groove 71 . Of course, in other exemplary embodiments of the present invention, the third groove 71 may not be formed on the photoelectric conversion functional layer 6 , and the third groove 71 may only be formed on the transparent conductive layer 7 .
上述所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施方式中,如有可能,各实施例中所讨论的特征是可互换的。在上面的描述中,提供许多具体细节从而给出对本发明的实施方式的充分理解。然而,本领域技术人员将意识到,可以实践本发明的技术方案而没有所述特定细节中的一个或更多,或者可以采用其它的方法、组件、材料等。在其它情况下,不详细示出或描述公知结构、材料或者操作以避免模糊本发明的各方面。The features, structures or characteristics described above may be combined in any suitable manner in one or more embodiments and, where possible, the features discussed in the various embodiments are interchangeable. In the foregoing description, numerous specific details were provided in order to give a thorough understanding of embodiments of the invention. Those skilled in the art will appreciate, however, that the technical solutions of the present invention may be practiced without one or more of the specific details, or that other methods, components, materials, etc. may be employed. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of the invention.
本说明书中使用“约”“大约”的用语通常表示在一给定值或范围的20%之内,较佳是10%之内,且更佳是5%之内。在此给定的数量为大约的数量,意即在没有特定说明的情况下,仍可隐含“约”“大约”“大致”“大概”的含义。The terms "about" and "approximately" used in this specification generally mean within 20%, preferably within 10%, and more preferably within 5% of a given value or range. The given quantity here is an approximate quantity, which means that the meanings of "about", "approximately", "approximately" and "approximately" can still be implied without specific instructions.
虽然本说明书中使用相对性的用语,例如“上”“下”来描述图标的一个组件对于另一组件的相对关系,但是这些术语用于本说明书中仅出于方便,例如根据附图中所述的示例的方向。能理解的是,如果将图标的装置翻转使其上下颠倒,则所叙述在“上”的组件将会成为在“下”的组件。当某结构在其它结构“上”时,有可能是指某结构一体形成于其它结构上,或指某结构“直接”设置在其它结构上,或指某结构通过另一结构“间接”设置在其它结构上。Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, for example, according to the description in the accompanying drawings directions for the example described above. It will be appreciated that if the illustrated device is turned over so that it is upside down, then elements described as being "upper" will become elements that are "lower". When a structure is "on" another structure, it may mean that a structure is integrally formed on another structure, or that a structure is "directly" placed on another structure, or that a structure is "indirectly" placed on another structure through another structure. other structures.
本说明书中,用语“一个”、“一”、“该”、“所述”和“至少一个”用以表示存在一个或多个要素/组成部分/等;用语“包含”、“包括”和“具有”用以表示开放式的包括在内的意思并且是指除了列出的要素/组成部分/等之外还可存在另外的要素/组成部分/等;用语“第一”、“第二”和“第三”等仅作为标记使用,不是对其对象的数量限制。In this specification, the terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising", "including" and "Having" is used to indicate an open-ended inclusive meaning and means that there may be additional elements/components/etc. in addition to the listed elements/components/etc.; the terms "first", "second " and "Third" etc. are used only as marks, not as restrictions on the number of their objects.
应可理解的是,本发明不将其应用限制到本说明书提出的部件的详细结构和布置方式。本发明能够具有其他实施方式,并且能够以多种方式实现并且执行。前述变形形式和修改形式落在本发明的范围内。应可理解的是,本说明书公开和限定的本发明延伸到文中和/或附图中提到或明显的两个或两个以上单独特征的所有可替代组合。所有这些不同的组合构成本发明的多个可替代方面。本说明书所述的实施方式说明了已知用于实现本发明的最佳方式,并且将使本领域技术人员能够利用本发明。It should be understood that the invention is not limited in its application to the detailed construction and arrangement of components set forth in this specification. The invention is capable of other embodiments and of being practiced and carried out in various ways. The foregoing variations and modifications fall within the scope of the present invention. It shall be understood that the invention disclosed and defined in this specification extends to all alternative combinations of two or more of the individual features mentioned or evident from the text and/or drawings. All of these different combinations constitute alternative aspects of the invention. The embodiments described in this specification illustrate the best modes known for carrying out the invention and will enable others skilled in the art to utilize the invention.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001044471A (en) * | 1999-08-03 | 2001-02-16 | Canon Inc | Apparatus and method for processing deposited film and deposited film processed by the method |
| JP2001168068A (en) * | 1999-12-10 | 2001-06-22 | Canon Inc | Apparatus and method for processing deposited film and deposited film processed by the method |
| US20030180983A1 (en) * | 2002-01-07 | 2003-09-25 | Oswald Robert S. | Method of manufacturing thin film photovoltaic modules |
| JP2010219171A (en) * | 2009-03-13 | 2010-09-30 | Omron Corp | Scribe processing method and device |
| CN103346173A (en) * | 2013-06-18 | 2013-10-09 | 南开大学 | Flexible copper indium gallium selenium thin film solar cell module and preparation method thereof |
| CN104802150A (en) * | 2015-05-11 | 2015-07-29 | 爱佩仪中测(成都)精密仪器有限公司 | Automatic scriber and application method thereof |
| CN106244989A (en) * | 2016-07-26 | 2016-12-21 | 华南师范大学 | Produce the method and apparatus of flexible micro-nano metalolic network transparent conductive film continuously |
| CN208315585U (en) * | 2018-05-24 | 2019-01-01 | 北京铂阳顶荣光伏科技有限公司 | Hull cell preparation facilities |
-
2018
- 2018-05-24 CN CN201810510207.1A patent/CN110534610A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001044471A (en) * | 1999-08-03 | 2001-02-16 | Canon Inc | Apparatus and method for processing deposited film and deposited film processed by the method |
| JP2001168068A (en) * | 1999-12-10 | 2001-06-22 | Canon Inc | Apparatus and method for processing deposited film and deposited film processed by the method |
| US20030180983A1 (en) * | 2002-01-07 | 2003-09-25 | Oswald Robert S. | Method of manufacturing thin film photovoltaic modules |
| JP2010219171A (en) * | 2009-03-13 | 2010-09-30 | Omron Corp | Scribe processing method and device |
| CN103346173A (en) * | 2013-06-18 | 2013-10-09 | 南开大学 | Flexible copper indium gallium selenium thin film solar cell module and preparation method thereof |
| CN104802150A (en) * | 2015-05-11 | 2015-07-29 | 爱佩仪中测(成都)精密仪器有限公司 | Automatic scriber and application method thereof |
| CN106244989A (en) * | 2016-07-26 | 2016-12-21 | 华南师范大学 | Produce the method and apparatus of flexible micro-nano metalolic network transparent conductive film continuously |
| CN208315585U (en) * | 2018-05-24 | 2019-01-01 | 北京铂阳顶荣光伏科技有限公司 | Hull cell preparation facilities |
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