CN110788739A - Polishing method of indium antimonide single crystal wafer - Google Patents
Polishing method of indium antimonide single crystal wafer Download PDFInfo
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- CN110788739A CN110788739A CN201911058927.XA CN201911058927A CN110788739A CN 110788739 A CN110788739 A CN 110788739A CN 201911058927 A CN201911058927 A CN 201911058927A CN 110788739 A CN110788739 A CN 110788739A
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- Prior art keywords
- indium antimonide
- polishing
- single crystal
- crystal wafer
- antimonide single
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a polishing method of an indium antimonide single crystal wafer, belonging to the technical field of photoelectric materials. The method designs a formula of a fine polishing solution in the polishing process of the indium antimonide single crystal wafer, utilizes the chemical action of the fine polishing solution, cooperates with the mechanical action of a polishing disc in a precision polishing machine, and carries out ultra-precision flattening processing on the indium antimonide single crystal wafer by strictly controlling the rotating speed, the pressure and the dropping speed of the fine polishing solution, so that the perfect crystal lattice of the polished indium antimonide single crystal wafer is realized, the secondary defect caused by polishing processing in the prior art can be effectively avoided, and the blank in the field of precision processing of the indium antimonide single crystal wafer is filled. The indium antimonide single crystal wafer processed by the polishing method has perfect crystal lattice, so the rate of finished products of the infrared detector prepared by the indium antimonide single crystal wafer has great progress, and the application of the indium antimonide single crystal wafer on the infrared detector is greatly widened.
Description
Technical Field
The invention relates to a polishing method of an indium antimonide single crystal wafer, in particular to a high-efficiency polishing method suitable for the indium antimonide single crystal wafer, and belongs to the technical field of photoelectric materials.
Background
Indium antimonide is a material with the narrowest forbidden band width and the largest mobility in a III-V group compound semiconductor, has stable physical and chemical properties, and is widely applied to the aspects of infrared detectors, Hall devices and the like. The quantum efficiency of the infrared detector is closely related to the selected infrared sensitive material, indium antimonide has very high quantum efficiency in a wave band of 3-5 microns, and the indium antimonide has low cost in preparing the infrared detector, so that the indium antimonide infrared detector draws more and more attention with important application in military and wide prospect in civil. With the large-scale development of indium antimonide infrared focal plane array devices, factors which restrict the uniformity, yield and cost of the array are not the quality and size of materials, but the technology and quality of wafer surface processing. In order to improve the reliability and the yield of the indium antimonide infrared focal plane array device, the research and development of a precision processing technology with the surface free from scratch and the roughness less than 2A are important.
At present, aluminum oxide, silica sol and the like are mainly used as polishing liquid of abrasive materials in the technical process of processing the surface of an indium antimonide wafer, the surface of the indium antimonide single wafer polished by the method has serious scratches, the surface roughness is difficult to meet the technical requirement of precision processing, and the polishing efficiency is low. In the subsequent process, after high-temperature oxidation, a large amount of dislocation is generated around the scribe line due to the influence of mechanical stress, and the performance of the device is greatly influenced. In addition, the prior magnesium oxide, sodium hydroxide and the like are used as polishing agent materials, which can cause secondary pollution of the indium antimonide single crystal chip and the like. It can cause P-N junction leakage, charge storage time reduction, etc. Seriously affecting the performance of the device.
Disclosure of Invention
Aiming at the defects of the indium antimonide single crystal wafer polishing technology in the prior art, the invention aims to provide the indium antimonide single crystal wafer polishing method, which mainly realizes the precise processing of the surface of the indium antimonide single crystal wafer by modulating the components of the fine polishing liquid in the polishing process of the indium antimonide single crystal wafer.
The purpose of the invention is realized by the following technical scheme.
A polishing method of an indium antimonide single crystal wafer comprises the following steps:
(1) bonding the indium antimonide single crystal wafer meeting the actual size requirement of the product on a rough polishing disc by using a wax adhesive, and roughly polishing and thinning the indium antimonide single crystal wafer, wherein the thickness of the roughly polished indium antimonide single crystal wafer is 525 +/-25 mu m;
preferably, the rough polishing solution is a mixed solution of alumina with the grain diameter of 3-9 mu m and water, and the volume ratio is 1: 30.
(2) Loading the roughly polished indium antimonide single crystal wafer on a precision polishing machine, using a precision polishing solution, and controlling the rotation speed of a polishing disc to be 60-90 r/min and the pressure to be 10g/cm2～15g/cm2Precisely polishing the surface of the indium antimonide wafer for more than 20 hours under the condition that the dropping speed of the fine polishing solution is 10-20 drops/min until the surface of the indium antimonide wafer is not scratched under a microscope with the magnification of 100 times, and finishing the precise polishing;
wherein the fine polishing solution is a mixed solution of hydrogen peroxide and silica sol in a volume ratio of 1: 2-4; the silica sol is a dispersion liquid of nano-scale silica particles in water, and the volume fraction of the silica is 25-40%.
(3) And cleaning the fine polishing solution on the surface of the single crystal wafer of the precisely polished indium antimonide, and removing the adhesive on the surface to obtain the polished indium antimonide single crystal wafer.
The water in the above step is preferably deionized water.
Advantageous effects
The invention provides a polishing method of an indium antimonide single crystal wafer, which is mainly used for designing a formula of a fine polishing solution in the polishing process of the indium antimonide single crystal wafer, carrying out ultra-precise leveling processing on the indium antimonide single crystal wafer by utilizing the chemical action of the fine polishing solution and matching with the mechanical action of a polishing disc in a precise polishing machine and strictly controlling the rotating speed, the pressure and the dropping speed of the fine polishing solution, thereby realizing the perfect crystal lattice of the polished indium antimonide single crystal wafer, effectively avoiding the secondary defect caused by polishing processing in the prior art and making up the blank in the field of precise processing of the indium antimonide single crystal wafer. The indium antimonide single crystal wafer processed by the polishing method has perfect crystal lattice, so the rate of finished products of the infrared detector prepared by the indium antimonide single crystal wafer has great progress, and the application of the indium antimonide single crystal wafer on the infrared detector is greatly widened.
Detailed Description
The present invention will be further described with reference to the following detailed description, but the invention is not limited thereto.
Example 1
A polishing method of an indium antimonide single crystal wafer comprises the following steps:
(1) bonding the indium antimonide single crystal wafer meeting the required wafer size requirement on a polishing disc by using wax, and roughly polishing and thinning the indium antimonide single crystal wafer, wherein the thickness of the roughly polished indium antimonide single crystal wafer is (525 +/-25) mu m; the evenness of the antimony surface is less than 5 mu m root mean square;
wherein the rough polishing solution is a mixed solution of alumina with the particle size of 3-9 mu m and water, and the volume ratio is 1: 30; the rough polishing equipment is a Shenyang Kejing polishing machine, and the model is as follows: HNIPOL-1202.
(2) Loading the roughly polished indium antimonide single crystal wafer on a precision polishing machine, using a precision polishing solution, and rotating at a speed of 60r/min and a pressure of 10g/cm on a polishing disc2Precisely polishing the surface of the indium antimonide wafer for more than 20 hours under the condition that the dropping speed of the fine polishing solution is 10 drops/min until the surface of the indium antimonide wafer is not scratched under a microscope with the magnification of 100 times, and finishing the precise polishing;
wherein the fine polishing solution is a mixed solution of hydrogen peroxide and silica sol in a volume ratio of 1: 2; the silica sol is a dispersion of nano-scale silica particles in water, and the volume fraction of the silica is 25 percent; the precision polisher is a biaxial machine produced by northwest machine factories, and the model is as follows: J28180-6/2P.
(3) And cleaning the fine polishing solution on the surface of the single crystal wafer of the precisely polished indium antimonide, and removing the adhesive on the surface to obtain the polished indium antimonide single crystal wafer.
The water in the above step is deionized water.
The indium antimonide single crystal wafer polished in the embodiment is subjected to the following detection:
(1) observing the polished indium antimonide single crystal wafer under a dark field microscope with the magnification of 100 times, wherein the surface of the indium antimonide single crystal wafer is not scratched, and the microscope is a Germany Leica microscope with the model number: CTR 6000;
(2) the roughness of the A surface of the polished indium antimonide single crystal wafer is less than 0.1 mu m measured by a step instrument, wherein the step instrument is manufactured by Mitutoyo corpp company of Japan and has the model number: c150 XB.
Example 2
A polishing method of an indium antimonide single crystal wafer comprises the following steps:
(1) bonding the indium antimonide single crystal wafer meeting the required wafer size requirement on a polishing disc by using wax, and roughly polishing and thinning the indium antimonide single crystal wafer, wherein the thickness of the roughly polished indium antimonide single crystal wafer is (525 +/-25) mu m; the evenness of the antimony surface is less than 5 mu m root mean square.
Wherein the rough polishing solution is a mixed solution of alumina with the particle size of 3-9 mu m and water, and the volume ratio is 1: 30; the rough polishing equipment is a Shenyang Kejing polishing machine, and the model is as follows: HNIPOL-1202.
(2) Loading the roughly polished indium antimonide single crystal wafer on a precision polishing machine, using a precision polishing solution, and rotating at a speed of 90r/min and a pressure of 15g/cm on a polishing disc2Precisely polishing the surface of the indium antimonide wafer for more than 20 hours under the condition that the dropping speed of the fine polishing solution is 20 drops/min until the surface of the indium antimonide wafer is not scratched under a microscope with the magnification of 100 times, and finishing the precise polishing;
wherein the fine polishing solution is a mixed solution of hydrogen peroxide and silica sol in a volume ratio of 1: 4; the silica sol is a dispersion of nano-sized silica particles in water, and the volume fraction of silica is 40%. The fine polishing equipment is a biaxial machine produced by northwest machine factories, and has the model: J28180-6/2P.
(3) And cleaning the fine polishing solution on the surface of the single crystal wafer of the precisely polished indium antimonide, and removing the adhesive on the surface to obtain the polished indium antimonide single crystal wafer.
The water in the above step is deionized water.
The indium antimonide single crystal wafer polished in the embodiment is subjected to the following detection:
(1) observing the polished indium antimonide single crystal wafer under a dark field microscope with the magnification of 100 times, wherein the surface of the indium antimonide single crystal wafer is not scratched, and the microscope is a Germany Leica microscope with the model number: CTR 6000.
(2) The roughness of the A surface of the polished indium antimonide single crystal wafer is less than 0.1 mu m measured by a step instrument, wherein the step instrument is manufactured by Mitutoyo corpp company of Japan and has the model number: c150 XB.
In summary, the above are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention; any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A polishing method of an indium antimonide single crystal wafer is characterized in that: the method comprises the following steps:
(1) bonding the indium antimonide single crystal wafer meeting the actual size requirement of the product on a rough polishing disc by using a wax adhesive, and roughly polishing and thinning the indium antimonide single crystal wafer, wherein the thickness of the roughly polished indium antimonide single crystal wafer is 525 +/-25 mu m;
(2) loading the roughly polished indium antimonide single crystal wafer on a precision polishing machine, using a precision polishing solution, and controlling the rotation speed of a polishing disc to be 60-90 r/min and the pressure to be 10g/cm2～15g/cm2Precisely polishing the surface of the indium antimonide wafer under a microscope with the magnification of 100 times until the surface of the indium antimonide wafer is not scratched, and finishing the precise polishing;
the fine polishing solution is a mixed solution of hydrogen peroxide and silica sol in a volume ratio of 1: 2-4; the silica sol is a dispersion liquid of nano-scale silica particles in water, and the volume fraction of the silica is 25-40%;
(3) and cleaning the fine polishing solution on the surface of the single crystal wafer of the precisely polished indium antimonide, and removing the adhesive on the surface to obtain the polished indium antimonide single crystal wafer.
2. The polishing method of an indium antimonide single crystal wafer according to claim 1, comprising: the rough polishing solution is a mixed solution of alumina with the particle size of 3-9 mu m and water, and the volume ratio is 1: 30.
3. The polishing method of an indium antimonide single crystal wafer according to claim 1, comprising: and (4) precisely polishing for more than 20 hours until the surface of the indium antimonide wafer is not scratched under a microscope with the magnification of 100 times, and finishing the precise polishing.
4. The polishing method of an indium antimonide single crystal wafer according to claim 1, comprising: the water is deionized water.
5. The polishing method of an indium antimonide single crystal wafer according to claim 1, comprising: the rough polishing solution is a mixed solution of alumina with the particle size of 3-9 mu m and water, and the volume ratio is 1: 30;
precisely polishing for more than 20 hours until the surface of the indium antimonide wafer is not scratched under a microscope with the magnification of 100 times, and finishing the precise polishing;
the water is deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201911058927.XA CN110788739A (en) | 2019-10-31 | 2019-10-31 | Polishing method of indium antimonide single crystal wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911058927.XA CN110788739A (en) | 2019-10-31 | 2019-10-31 | Polishing method of indium antimonide single crystal wafer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112216602A (en) * | 2020-10-22 | 2021-01-12 | 中国电子科技集团公司第四十六研究所 | Polishing method for indium antimonide single crystal wafer |
| CN113894623A (en) * | 2021-10-29 | 2022-01-07 | 广东先导微电子科技有限公司 | Single-side polishing method of gallium antimonide wafer and gallium antimonide polishing sheet |
| CN115070619A (en) * | 2022-08-18 | 2022-09-20 | 苏州燎塬半导体有限公司 | Antimonide grinding and polishing clamp and antimonide wafer grinding and polishing method |
| CN115377086A (en) * | 2022-08-10 | 2022-11-22 | 中国电子科技集团公司第十一研究所 | A Thinning Method of Indium Antimonide Infrared Detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112216602A (en) * | 2020-10-22 | 2021-01-12 | 中国电子科技集团公司第四十六研究所 | Polishing method for indium antimonide single crystal wafer |
| CN113894623A (en) * | 2021-10-29 | 2022-01-07 | 广东先导微电子科技有限公司 | Single-side polishing method of gallium antimonide wafer and gallium antimonide polishing sheet |
| CN113894623B (en) * | 2021-10-29 | 2023-02-17 | 广东先导微电子科技有限公司 | Single-side polishing method of gallium antimonide wafer and gallium antimonide polishing sheet |
| CN115377086A (en) * | 2022-08-10 | 2022-11-22 | 中国电子科技集团公司第十一研究所 | A Thinning Method of Indium Antimonide Infrared Detector |
| CN115070619A (en) * | 2022-08-18 | 2022-09-20 | 苏州燎塬半导体有限公司 | Antimonide grinding and polishing clamp and antimonide wafer grinding and polishing method |
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Application publication date: 20200214 |