CN110835730A - 7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process - Google Patents

Abstract

The invention relates to a 7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process. The first, second, and third TCO film deposition PVD chambers and the unloading chamber are connected in turn by vacuum locks, and the head and tail are provided with vacuum locks. A mobile device passes through each chamber from front to back, and preheats the loading chamber. The carrier board, the vertical carrier board is set on the mobile device and is movable from front to back in the integrated equipment. The second TCO film deposition PVD cavity is equipped with a sputtering target, and each of the above cavities is connected to an ultra-pure gas circuit, Heating system, vacuum system. It can effectively avoid exposure to the air in the product preparation process, improve the performance of the crystalline silicon heterojunction solar cell, and reduce its production cost.

Description

7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process

technical field

The invention relates to the field of high-efficiency crystalline silicon solar cell manufacturing, in particular to a 7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process for solar cell manufacturing.

Background technique

Currently, a class of advanced and efficient crystalline silicon solar cells is based on amorphous silicon/crystalline silicon heterojunction structures. The two key steps in its production technology are the deposition of amorphous silicon-based thin films (including intrinsic layers and doped layers, made of amorphous silicon, microcrystalline silicon, nano-silicon, oxygen-doped amorphous silicon, etc.) and transparent conductive Deposition of oxide TCO layers. The more commonly used deposition methods for amorphous silicon-based thin films are low-temperature chemical vapor deposition methods, including plasma chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD). Controlled sputtering is most commonly used). In production, the equipment corresponding to these two technologies is usually separated. That is, the low temperature CVD equipment is an independent system, which usually includes several parts such as feeding and preheating chamber, intrinsic layer deposition chamber, doping deposition chamber (p-type or n-type) and blanking chamber; and PVD equipment also It should include a feeding chamber, a preheating chamber, a film deposition chamber, and a blanking chamber. Between the CVD and PVD systems, the loading and unloading devices for silicon wafers and the conveying devices for transferring silicon wafers between different equipment are also required. The overall system is very complex. Moreover, because the product must be exposed to the air during the transfer between the CVD and PVD systems, the surface of the product is affected by water vapor, oxygen, dust, etc. in the air, resulting in performance degradation; high operating costs in production, and the number of workers required is also higher. many.

SUMMARY OF THE INVENTION

The technical problem solved by the present invention is to provide a method that can effectively avoid the exposure of the intrinsic and doped silicon-based thin films and the TCO film layers to the air during the product preparation process, improve the performance of the crystalline silicon heterojunction solar cell, and reduce its production cost. 7-cavity vertical HWCVD-PVD integrated equipment for solar cell fabrication.

The technical scheme adopted by the present invention is: a 7-cavity vertical HWCVD-PVD integrated equipment for solar cell manufacturing, which is characterized in that it includes a preheating feeding cavity and an intrinsic amorphous silicon film deposition HWCVD cavity. body, doped amorphous silicon film deposition HWCVD chamber, first TCO film deposition PVD chamber, second TCO film deposition PVD chamber, third TCO film deposition PVD chamber and blanking chamber, any of the above chambers They are connected in sequence through vacuum locks. The inlet of the preheating feeding cavity and the outlet of the unloading cavity are also equipped with vacuum locks. A moving device connects each cavity and the vacuum lock from front to back. The silicon film deposition HWCVD cavity, the doped amorphous silicon film deposition HWCVD cavity, the first TCO film deposition PVD cavity, the second TCO film deposition PVD cavity, and the third TCO film deposition PVD cavity are all vertical structures. The set-up carrier plate in the preheating feeding chamber, the vertical carrier plate is arranged on the mobile device and is movable from front to back in the integrated equipment, and the second TCO film deposition PVD chamber is equipped with a sputtering target. The cavity is connected with an ultrapure gas circuit system and/or a heating system and/or a cooling water system and/or a vacuum system.

The moving device is a pusher feeding track or a moving track or a moving hanger.

The blanking cavity is connected to a nitrogen or clean air system.

A 7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process, using a vertical structure intrinsic amorphous silicon film deposition HWCVD cavity, doped amorphous silicon film deposition HWCVD cavity, and vertical structure Three TCO thin film deposition PVD cavities are integrated, and the two thin film deposition equipment are integrated. The cavities are connected by a vacuum lock structure, and the products are not exposed to the atmosphere when the products are transferred between the cavities of the equipment through the mobile device.

When the equipment is in use, each cavity is kept in a vacuum state by its external vacuum system before the silicon wafer enters. Fix the silicon wafer to be coated on the vertical carrier plate; preheat the feeding chamber to break the vacuum, open the vacuum lock on the feeding end, the carrier plate is sent into the preheating feeding chamber by the mobile device, and then close the vacuum Lock the vacuum for pre-heating. The pre-heating can be completed in the cavity or by an external heating system. After reaching the predetermined vacuum degree and temperature, open the vacuum lock between the pre-heating feeding cavity and the HWCVD cavity for intrinsic amorphous silicon film deposition. ; Send the carrier plate into the intrinsic amorphous silicon film deposition HWCVD chamber to close the vacuum lock; carry out the deposition of the intrinsic amorphous silicon film layer in the intrinsic amorphous silicon film deposition HWCVD chamber, and remove the residual after the deposition is completed Reactive gas, after reaching the required vacuum degree, open the vacuum lock between the HWCVD chamber for deposition of HWCVD of intrinsic amorphous silicon film and deposition of HWCVD, and send the carrier plate to HWCVD for deposition of HWCVD of amorphous silicon film The vacuum lock is closed in the chamber; the deposition of the doped amorphous silicon film layer is carried out in the HWCVD chamber for doped amorphous silicon film deposition. After the deposition is completed, the residual reaction gas is removed, and the chamber is opened after the required vacuum degree is reached. In the first TCO film deposition PVD chamber, adjust the temperature to a suitable temperature, and prepare to start TCO deposition, the first The first TCO film deposition PVD cavity plays the role of preheating before TCO deposition and adjusting the HWCVD part and the TCO deposition part; the vacuum locks between the first, second and third TCO film deposition PVD chambers are kept open under normal working conditions state, the sputtering target is installed in the second TCO film deposition PVD cavity, and the carrier plate passes through the three cavities in sequence at a uniform speed to complete the TCO coating process; then open the vacuum lock after the third TCO film deposition PVD cavity, load After the plate is sent into the blanking chamber, close the vacuum lock; use nitrogen or clean air to break the vacuum in the blanking chamber, and then open the vacuum lock at the discharge end of the blanking chamber to remove the carrier plate; The cavity is evacuated. In this way, the coating work of intrinsic amorphous silicon, heavily doped amorphous silicon and TCO on one surface of the silicon wafer for amorphous silicon/crystalline silicon heterojunction solar cell is completed.

The beneficial effects of the present invention are: the whole process of deposition of intrinsic amorphous silicon, doped amorphous silicon and TCO thin films deposited on one surface of a silicon wafer during the manufacturing process of amorphous silicon/crystalline silicon heterojunction solar cells is not exposed to air , reducing the oxidation of the silicon wafer film by the atmosphere and the pollution of the surface of each structure caused by water vapor and dust in the air, thereby improving the performance of the product. The integrated design of HWCVD and PVD is carried out from front to back through the mobile device, which saves the unloading cavity of HWCVD equipment and the loading cavity of PVD, as well as the transfer device and unloading and loading device between the two equipments. Reduce the complexity of the equipment, shorten the process and man-hours, reduce the cost of purchasing and operating the production line equipment; reduce the process, thereby reducing the handling of the product and the physical impact on the silicon wafer between the carrier tray, thereby reducing the product. The fragmentation rate further reduces the cost.

Description of drawings

Fig. 1 is the front view of the present invention;

Among them: preheating feeding chamber 1; intrinsic amorphous silicon film deposition HWCVD chamber 2; doped amorphous silicon film deposition HWCVD chamber 3; first TCO film deposition PVD chamber 4; second TCO film deposition The PVD cavity 5; the PVD cavity 6 for the third TCO film deposition; the blanking cavity 7; the carrier plate 8; the moving track 9;

Detailed ways

The present patent will be further elaborated below in conjunction with specific embodiments. It should be understood that these examples are only used to illustrate the present patent and not to limit the scope of the present patent. In addition, it should be understood that after reading the content taught in this patent, those skilled in the art can make various changes or modifications to this patent, and these equivalent forms also fall within the scope defined by the appended claims of this application.

As shown in Figure 1: A 7-cavity vertical HWCVD-PVD integrated equipment for solar cell manufacturing includes a preheating feeding cavity 1, an intrinsic amorphous silicon film deposition HWCVD cavity 2, a doping amorphous silicon Film deposition HWCVD chamber 3, first TCO film deposition PVD chamber 4, second TCO film deposition PVD chamber 5, third TCO film deposition PVD chamber 6, blanking chamber 7, carrier plate 8, Moving track 9, vacuum lock 10. The above-mentioned HWCVD and PVD cavities are all vertical, preheating the feeding cavity 1, the intrinsic amorphous silicon film deposition HWCVD cavity 2, the doped amorphous silicon film deposition HWCVD cavity 3, and the first TCO film deposition. The PVD cavity 4, the PVD cavity 5 for deposition of the second TCO film, the PVD cavity 6 for deposition of the third TCO film, and the blanking cavity 7 are sequentially connected from front to back and connected by vacuum locks 10, preheating The feeding end of the feeding cavity 1 and the discharging end of the unloading cavity 7 are also provided with vacuum locks. The preheating feeding cavity 1 is provided with a vertical carrier plate 8. The integrated equipment is provided with a sequence of loading and unloading from front to back. The material is fed to the moving track 9 where the carrier plate moves in each cavity, and the vacuum is broken in the blanking cavity 7 with nitrogen or clean air.

The 7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process adopts the vertical structure of the intrinsic amorphous silicon film deposition HWCVD cavity, the vertical structure of the doped amorphous silicon film deposition HWCVD cavity and three vertical structures. The TCO thin film deposition PVD cavity with the same structure, the above film deposition cavity is integrated, and the vacuum lock structure is used to connect each cavity. The silicon wafer to be coated is fixed on the vertical carrier plate; the preheating feeding chamber breaks the vacuum, and the vacuum lock on the feeding end is opened. The carrier plate is sent into the preheating feeding chamber by the mobile device, and then the vacuum lock is closed. Pre-heating is performed by vacuuming. The pre-heating can be completed in the cavity or by an external heating system. After reaching the predetermined vacuum degree and temperature, open the vacuum lock between the pre-heating feeding cavity and the HWCVD cavity for intrinsic amorphous silicon film deposition; The carrier plate is sent into the HWCVD chamber for the deposition of the intrinsic amorphous silicon film, and the vacuum lock is closed; the deposition of the intrinsic amorphous silicon film layer is carried out in the HWCVD chamber for the deposition of the intrinsic amorphous silicon film, and the residual reaction is removed after the deposition is completed. After reaching the required vacuum degree, open the vacuum lock between the HWCVD chamber of the HWCVD chamber for deposition of the intrinsic amorphous silicon film, and the vacuum lock between the HWCVD chambers for the deposition of the doped amorphous silicon film. The vacuum lock is closed in the body; the deposition of the doped amorphous silicon film layer is carried out in the HWCVD chamber for doped amorphous silicon film deposition. Vacuum lock, send the carrier plate into the first TCO film deposition PVD chamber to close the vacuum lock; in the first TCO film deposition PVD chamber, adjust the temperature to a suitable temperature, and prepare to start TCO deposition, the first The TCO film deposition PVD cavity plays the role of preheating before TCO deposition and adjusting the HWCVD part and the TCO deposition part; the vacuum locks between the first, second and third TCO film deposition PVD chambers are kept open under normal working conditions , the sputtering target is installed in the second TCO film deposition PVD cavity, and the carrier plate passes through the three cavities at a uniform speed to complete the TCO coating process; then open the vacuum lock after the third TCO film deposition PVD cavity, the carrier plate After being sent into the blanking chamber, close the vacuum lock; use nitrogen or clean air to break the vacuum in the blanking chamber, and then open the vacuum lock at the discharge end of the blanking chamber to remove the carrier plate; close the vacuum lock, and clean the blanking chamber The body is evacuated to complete the coating work of intrinsic amorphous silicon, heavily doped amorphous silicon and TCO on one surface of the silicon wafer for amorphous silicon/crystalline silicon heterojunction solar cell.

In this embodiment, the preheating feeding cavity, each HWCVD, and each PVD cavity are connected to an ultrapure gas circuit system and/or heating system and/or cooling water system and/or vacuum system, which are comprehensively selected according to on-site production.

Claims (1)

1. A7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process is characterized in that: the intrinsic amorphous silicon thin film deposition HWCVD cavity body with a vertical structure, the doped amorphous silicon thin film deposition HWCVD cavity body with a vertical structure and three TCO thin film deposition PVD cavity bodies with a vertical structure are adopted, the thin film deposition cavity bodies are integrated, the cavity bodies are connected through a vacuum lock structure, each cavity body is kept in a vacuum state by an external vacuum system before a silicon wafer enters, and the silicon wafer needing film coating is fixed on a vertically placed carrier plate; breaking vacuum of a preheating feeding cavity, opening a feeding end vacuum lock, conveying a carrier plate into the preheating feeding cavity by a mobile device, then closing the vacuum lock, vacuumizing and preheating, wherein the preheating can be completed in the cavity or by an external heating system, and after reaching a preset vacuum degree and temperature, opening a vacuum lock between the preheating feeding cavity and an intrinsic amorphous silicon thin film deposition HWCVD cavity; conveying the carrier plate into an HWCVD (tungsten-chemical vapor deposition) cavity for intrinsic amorphous silicon film deposition to close a vacuum lock; depositing an intrinsic amorphous silicon thin film layer in an intrinsic amorphous silicon thin film deposition HWCVD cavity, pumping out residual reaction gas after deposition is finished, opening a vacuum lock between the intrinsic amorphous silicon thin film deposition HWCVD cavity and an amorphous silicon thin film doped deposition HWCVD cavity after the required vacuum degree is reached, and conveying a carrier plate into the amorphous silicon thin film doped deposition HWCVD cavity to close the vacuum lock; depositing the doped amorphous silicon thin film layer in the doped amorphous silicon thin film deposition HWCVD cavity, pumping out residual reaction gas after deposition is finished, opening a vacuum lock behind the cavity after the required vacuum degree is reached, and sending the carrier plate into the first TCO thin film deposition PVD cavity to close the vacuum lock; adjusting the temperature to a proper temperature in the first TCO film deposition PVD cavity and preparing for starting TCO deposition, wherein the first TCO film deposition PVD cavity plays the roles of preheating before TCO deposition and adjusting a HWCVD part and a TCO deposition part; the vacuum lock among the first, second and third TCO film deposition PVD cavities is kept in an open state under the normal working condition, the sputtering target is arranged in the second TCO film deposition PVD cavity, and the support plate sequentially passes through the three cavities at a constant speed to complete the TCO film coating process; then opening a vacuum lock after the third TCO film deposition PVD cavity, and closing the vacuum lock after the carrier plate is conveyed into the blanking cavity; breaking vacuum in the blanking cavity by using nitrogen or clean air, then opening a vacuum lock at the discharge end of the blanking cavity, and moving out the carrier plate; and closing the vacuum lock, and vacuumizing the blanking cavity, so as to finish the film coating work of intrinsic amorphous silicon, heavily doped amorphous silicon and TCO on one surface of the silicon wafer for the amorphous silicon/crystalline silicon heterojunction solar cell.

Images