CN110838502A - Light-emitting diode chip, fabrication and transfer method, display device and fabrication method - Google Patents

Abstract

The present invention provides a light-emitting diode chip, a method for manufacturing and transferring it, a display device and a method for manufacturing the same. By forming a plurality of grooves distributed in an array on a substrate, each adjacent groove forms a raised mesa, and the grooves are formed on the substrate. The bottom surface of each groove and the raised table surface grow core particles, so that the core particles are dislocated up and down, and then the separation of the core particles of the groove and the raised table surface can be achieved relatively simply, so that the core particles of the groove remain in the groove. On the substrate, the core particles of the raised mesa are transferred to the transfer substrate to transfer a large amount of light-emitting diode chips; at the same time, the structure of the light-emitting diode chips can meet the large amount of light-emitting diodes of different colors at the same time. transfer; finally, the protective glue is arranged on the side walls of each groove, so that the core particles located on the bottom surface of the groove are not damaged during the mass transfer process, thereby improving the yield of the product.

Description

Light-emitting diode chip, fabrication and transfer method, display device and fabrication method

technical field

The present application relates to the field of semiconductor technology, and more particularly, to a light-emitting diode chip, a method for manufacturing and transferring the same, a display device and a method for manufacturing the same.

Background technique

Micro-LED has developed into one of the hot spots of future display technology, but it has many technical difficulties and complex technologies, especially its key technology: mass transfer technology. With the development of technology, the mass transfer technology has developed many technical branches, such as electrostatic adsorption, laser burning and so on.

The traditional method for mass transfer of micro-LEDs is to transfer micro-components from a transfer substrate to a receiving substrate by substrate bonding (Wafer Bonding). One of the implementation methods of the transfer method is direct transfer, that is, the micro-component array is directly bonded from the transfer substrate to the receiving substrate, and then the transfer substrate is removed. Another implementation method is "indirect transfer". This method consists of two bonding/peeling steps. In indirect transfer, the transposition head may pick up part of the micro-component array on the intermediate carrier substrate, then bond the micro-component array to the receiving substrate, and then remove the transposition head.

However, the direct transfer or indirect transfer mass transfer technology in the prior art is complicated in process and high in cost.

In view of this, the present inventor has specially designed a light-emitting diode chip, a method for manufacturing and transferring it, a display device and a method for manufacturing the same, resulting in this case.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide a light emitting diode chip, a manufacturing and transferring method, a display device and a manufacturing method, so as to solve the problems of complicated process and high cost of direct transfer or indirect transfer mass transfer technology in the prior art.

In order to achieve the above object, the technical scheme adopted in the present invention is as follows:

A light-emitting diode chip, comprising:

a substrate, the surface of the substrate is provided with a plurality of grooves distributed in an array, each adjacent to the grooves forms a raised mesa, and the surface of the raised mesa is provided with a separation layer;

A plurality of core particles respectively located on the bottom surface of the groove and the raised mesa, each of the core particles includes a first-type conductive layer, an active layer and a second-type conductive layer stacked in sequence along the surface of the substrate, stacked on the surface of the substrate. A first electrode in the local area of the first type conductive layer, and a second electrode stacked on the surface of the second type conductive layer.

Preferably, an adhesive film layer bonded to the surface of the core particles of the raised mesa is also included.

Preferably, the side walls of each of the grooves are inclined side walls.

Preferably, the inclination angle of the side walls of each of the grooves is 45°.

Preferably, protective glue is adhered to the sidewalls of each of the grooves.

Preferably, the upper surface of the protective glue is lower than the upper surface of the raised mesa.

Preferably, the separation layer includes a laser lift-off layer or an etch stop layer.

The present invention also provides a method for manufacturing a light-emitting diode chip, which is used for manufacturing the above-mentioned light-emitting diode chip, including:

Step S1, providing a substrate, and forming a plurality of grooves distributed in an array and having inclined sidewalls on the surface of the substrate through an imprinting process, and each adjacent groove forms a raised mesa;

Step S2, growing a separation layer on the surface of each of the raised mesa;

Step S3, growing a light-emitting epitaxial structure, where the light-emitting epitaxial structure includes a first-type conductive layer, an active layer and a second-type conductive layer sequentially stacked along the surface of the substrate;

Step S4, forming a first electrode in a local area of the first-type conductive layer, and forming a second electrode on the surface of the second-type conductive layer;

Step S5, etching the inclined sidewalls of each of the grooves to form a scribe line, so that the bottom surface of each of the grooves and the raised mesa respectively form a number of independent core particles, and each of the core particles includes the edges along the substrate. A first-type conductive layer, an active layer, and a second-type conductive layer stacked in sequence on the surface, the first electrode stacked on the local area of the first-type conductive layer, and the first-type conductive layer stacked on the second-type conductive layer a second electrode on the surface;

Step S6, adhering protective glue on the cutting road, and the upper surface of the protective glue is lower than the upper surface of the raised table;

Step S7 , adhering an adhesive film layer on the surface of the core particles of the raised mesa.

Preferably, the growing a separation layer on the surface of the raised mesa specifically includes: growing a laser lift-off layer or an etching cut-off layer on the surface of the raised mesa.

The present invention also provides a method for transferring light-emitting diode chips, which is used to realize the above-mentioned mass transfer of light-emitting diode chips. The transferring method for light-emitting diode chips includes: first, passing the core particles of the raised mesa through the The adhesive film layer is combined with the transfer substrate; secondly, by peeling off the separation layer, the core particles of the raised mesa are transferred to the transfer substrate through the adhesive film layer.

Preferably, the separation layer includes a laser lift-off layer, and the transfer method of the light-emitting diode chip specifically includes: first, combining the core particles of the raised mesa with the transfer substrate through the adhesive film layer; secondly, using a laser Irradiate each of the laser peeling layers to peel off the core particles of each raised mesa, so that the core particles of the raised mesa are transferred to the transfer substrate through the adhesive film layer, and the core particles of the grooves are transferred to the transfer substrate. remaining on the substrate, thereby realizing the separation of the core particles located in the groove and the raised mesa.

Or, the separation layer includes an etching cut-off layer, and the transfer method of the light-emitting diode chip specifically includes: first, combining the core particles of the raised mesa with the transfer substrate through the adhesive film layer; The light-emitting diode chip is placed in an etching solution, and the etching solution erodes the etching cut-off layer to peel off the core particles of each raised mesa, so that the core particles of the raised mesa are transferred to the said raised mesa through the adhesive film layer. On the transfer substrate, the core particles of the groove remain on the substrate, thereby realizing the separation of the core particles located in the groove and the raised mesa.

The present invention also provides a method for fabricating a display device, which adopts the fabrication and transfer method for a light-emitting diode chip described in any one of the above to achieve mass transfer.

The present invention also provides a display device, which is formed by using the above-mentioned display device manufacturing method.

It can be seen from the above technical solutions that the light-emitting diode chip provided by the present invention forms a plurality of grooves distributed in an array on the substrate, and each adjacent groove forms a convex mesa, and the bottom surface of each groove and the convex surface are formed. Raise the mesa to grow the core particles, so that the core particles are dislocated up and down, and then the separation of the grooves and the core particles of the raised mesa can be achieved relatively simply, so that the core particles of the groove remain on the substrate, The core particles of the raised mesa are transferred to the mass transfer of the light-emitting diode chips on the transfer substrate; at the same time, the structure of the light-emitting diode chips can meet the mass transfer of light-emitting diodes of different colors at the same time; The sidewall of the groove is provided with protective glue, which can further prevent the core particles located on the bottom surface of the groove from being damaged during the mass transfer process, thereby improving the yield of the product.

The invention also provides a method for manufacturing and transferring a light-emitting diode chip. By forming a plurality of grooves distributed in an array on the substrate, each adjacent groove forms a raised mesa, and the bottom surface of each groove and the raised groove are formed on the substrate. The mesa grows core particles, so that the core particles on the bottom surface of the groove and the raised mesa are dislocated up and down; and the groove can be realized by a single laser peeling or etching solution etching the separation layer of the raised mesa And the separation of the core particles on the raised table surface; the production and transfer method is simple to operate, easy to implement, and low cost, and the transfer of a huge amount of micro LEDs can be realized through the existing conventional adhesion process without the need for complicated instruments and processes such as suction nozzles; At the same time, the transfer substrate in the transfer process can be reused.

The present invention also provides a method for fabricating a display device, wherein the mass transfer process adopts the aforementioned fabrication and transfer method, which can simplify the process and reduce the cost compared with the prior art.

The present invention also provides a display device, which is formed by the above-mentioned display device manufacturing method, which can also simplify the process and reduce the cost.

Description of drawings

In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only It is an embodiment of the present invention. For those of ordinary skill in the art, other drawings can also be obtained according to the provided drawings without creative work.

FIG. 1 is a schematic structural diagram of a light-emitting diode chip provided by the application;

2 is a schematic structural diagram of a core particle provided by the application;

3-9 are schematic structural diagrams corresponding to the steps of the manufacturing method of the light-emitting diode core particles shown in Embodiment 1 and Embodiment 2 of the present application;

10-11 are schematic structural diagrams corresponding to the steps of the method for transferring light-emitting diode core particles shown in Embodiment 1 of the present application;

FIG. 10 and FIG. 12 are schematic structural diagrams corresponding to the steps of the method for transferring light-emitting diode core particles shown in Embodiment 2 of the present application;

FIG. 13 is a schematic structural diagram corresponding to the mass transfer of the light-emitting diode core particles according to the embodiment of the present application;

Explanation of symbols in the figure: 1, substrate, 1-1, groove, 1-2, raised mesa, 2, separation layer, 3, light-emitting epitaxial structure, 3-1, first-type conductive layer, 3-2, Active layer, 3-3, second type conductive layer, 4, first electrode, 5, second electrode, 6, dicing line, 7, protective glue, 8, adhesive film, 9, laser irradiation, 10, corrosive solution.

Detailed ways

In order to make the content of the present invention clearer, the content of the present invention will be further described below with reference to the accompanying drawings. The present invention is not limited to this specific embodiment. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

Example 1

This embodiment provides a light-emitting diode chip, as shown in FIG. 1 , including:

Substrate 1, the substrate 1 is a sapphire substrate, the surface of the substrate 1 is provided with a plurality of grooves 1-1 distributed in an array, and each adjacent groove 1-1 forms a raised mesa 1-2, and the raised mesa 1 The surface of -2 is provided with a separation layer 2;

Several core particles are respectively located on the bottom surface of the groove 1-1 and the raised mesa 1-2. The second-type conductive layer 3-3, the first electrode 4 stacked on the local area of the first-type conductive layer 3-1, and the second electrode 5 stacked on the surface of the second-type conductive layer 3-3.

Also included is an adhesive film layer 8 bonded to the surface of the core particles of the raised mesas 1-2.

The side walls of each groove 1-1 are inclined side walls.

The inclination angle of the side walls of each groove 1-1 is 45°.

A protective glue 7 is adhered to the side walls of each groove 1-1.

The upper surface of the protective glue 7 is lower than the upper surface of the raised mesa 1-2.

The separation layer 2 includes a laser lift-off layer.

This embodiment also provides a manufacturing method of a light-emitting diode chip, which is used for manufacturing the above-mentioned light-emitting diode chip, as shown in FIG. 3 to FIG. 9 , including:

Step S1, providing a substrate 1, the substrate 1 is a sapphire substrate, and through the imprinting process on the surface of the substrate 1, a plurality of grooves 1-1 distributed in an array and having inclined sidewalls are formed, and each adjacent groove 1-1 is formed. The groove 1-1 forms a raised table 1-2;

Step S2, growing a separation layer 2 on the surface of each raised mesa 1-2, and the separation layer 2 includes a laser peeling layer;

Step S3, growing a light-emitting epitaxial structure 3, the light-emitting epitaxial structure 3 includes a first-type conductive layer 3-1, an active layer 3-2 and a second-type conductive layer 3-3 stacked in sequence along the surface of the substrate 1;

Step S4, forming the first electrode 4 on the local area of the first type conductive layer 3-1, and forming the second electrode 5 on the surface of the second type conductive layer 3-3;

Step S5, etching the inclined sidewalls of each groove 1-1 to form a cutting track 6, so that the bottom surface of each groove 1-1 and the raised mesa 1-2 respectively form several independent core particles, and each core particle includes a core particle along the substrate. 1 The first-type conductive layer 3-1, the active layer 3-2 and the second-type conductive layer 3-3 stacked in sequence on the surface, the first electrode 4 stacked on the local area of the first-type conductive layer 3-1, and the stacked the second electrode 5 on the surface of the second type conductive layer 3-3;

Step S6, adhering the protective glue 7 on the cutting road 6, and the upper surface of the protective glue 7 is lower than the upper surface of the raised table 1-2;

Step S7, adhering an adhesive film layer 8 on the surface of the core particles of the raised mesa 1-2.

This embodiment also provides a method for transferring light-emitting diode chips, which is used to realize the above-mentioned mass transfer of light-emitting diode chips. The separation layer 2 includes a laser lift-off layer, as shown in FIGS. 10-11 . The transfer method for light-emitting diode chips is specific. It includes: first, combining the core particles of the raised mesa 1-2 with the transfer substrate through the adhesive film layer 8; secondly, by irradiating the laser 9 each laser peeling layer, peeling off the core particles of each raised mesa 1-2, as shown in the figure As shown in 13, the core particles of the raised mesa 1-2 are transferred to the transfer substrate through the adhesive film layer 8, and the core particles of the groove 1-1 are retained on the substrate 1, thereby realizing the position in the groove 1-1 and Separation of core particles of raised mesa 1-2.

It can be known from the above technical solutions that the light-emitting diode chip provided in this embodiment is a blue-green light-emitting diode chip, which is formed by forming a plurality of grooves 1-1 in an array on the substrate 1, and each adjacent groove 1 -1 Form the raised mesa 1-2, and grow core particles on the bottom surface of each groove 1-1 and the raised mesa 1-2, so that the core particles are dislocated up and down, and the grooves 1-1 and 1-2 can be easily realized. Separation of the core particles of the raised mesa 1-2, so that the core particles of the groove 1-1 remain on the substrate 1, and the core particles of the raised mesa 1-2 are transferred to the transfer substrate. Mass transfer of light-emitting diode chips; At the same time, the protective glue 7 is provided on the side wall of each groove 1-1, so that the core particles located on the bottom surface of the groove 1-1 are not damaged during the mass transfer process, thereby improving the yield of the product.

This embodiment also provides a method for manufacturing and transferring a light-emitting diode chip, which is a method for manufacturing and transferring a blue-green light-emitting diode chip. A raised mesa 1-2 is formed adjacent to the groove 1-1, and core particles are grown on the bottom surface of each groove 1-1 and the raised mesa 1-2, so that the bottom surface of the groove 1-1 and the raised mesa 1-2 are The core particles are dislocated up and down; and the separation layer 2 of the raised mesa 1-2 can be separated by a single laser to separate the core particles of the groove 1-1 and the raised mesa 1-2; the production and transfer method The operation is simple, easy to implement, and the cost is low. The transfer of a huge amount of micro-LEDs can be realized through the existing conventional adhesion process without complicated instruments and processes such as suction nozzles; at the same time, the transfer substrate during the transfer process can be reused.

Example 2

This embodiment provides a light-emitting diode chip, as shown in FIG. 1 , including:

Substrate 1, the substrate 1 is a gallium arsenide substrate, the surface of the substrate 1 is provided with a plurality of grooves 1-1 distributed in an array, and each adjacent groove 1-1 forms a raised mesa 1-2, and the raised The surface of the table top 1-2 is provided with a separation layer 2;

Several core particles are respectively located on the bottom surface of the groove 1-1 and the raised mesa 1-2. The second-type conductive layer 3-3, the first electrode 4 stacked on the local area of the first-type conductive layer 3-1, and the second electrode 5 stacked on the surface of the second-type conductive layer 3-3.

Also included is an adhesive film layer 8 bonded to the surface of the core particles of the raised mesas 1-2.

The side walls of each groove 1-1 are inclined side walls.

The inclination angle of the side walls of each groove 1-1 is 45°.

A protective glue 7 is adhered to the side walls of each groove 1-1.

The upper surface of the protective glue 7 is lower than the upper surface of the raised mesa 1-2.

The separation layer 2 includes an etch stop layer.

This embodiment also provides a method for fabricating a light-emitting diode chip, which is used for fabricating the above-mentioned light-emitting diode chip, as shown in FIG. 3 to FIG. 9 , including:

Step S1, providing a substrate 1, the substrate 1 is a gallium arsenide substrate, and through an imprinting process on the surface of the substrate 1, a plurality of grooves 1-1 distributed in an array and having inclined sidewalls are formed, each adjacent to each other. The groove 1-1 forms a raised table 1-2;

Step S2, growing a separation layer 2 on the surface of each raised mesa 1-2, and the separation layer 2 includes an etching cut-off layer;

Step S3, growing a light-emitting epitaxial structure 3, the light-emitting epitaxial structure 3 includes a first-type conductive layer 3-1, an active layer 3-2 and a second-type conductive layer 3-3 stacked in sequence along the surface of the substrate 1;

Step S4, forming the first electrode 4 on the local area of the first type conductive layer 3-1, and forming the second electrode 5 on the surface of the second type conductive layer 3-3;

Step S5, etching the inclined sidewalls of each groove 1-1 to form a cutting track 6, so that the bottom surface of each groove 1-1 and the raised mesa 1-2 respectively form several independent core particles, and each core particle includes a core particle along the substrate. 1 The first-type conductive layer 3-1, the active layer 3-2 and the second-type conductive layer 3-3 stacked in sequence on the surface, the first electrode 4 stacked on the local area of the first-type conductive layer 3-1, and the stacked the second electrode 5 on the surface of the second type conductive layer 3-3;

Step S6, adhering the protective glue 7 on the cutting road 6, and the upper surface of the protective glue 7 is lower than the upper surface of the raised table 1-2;

Step S7, adhering an adhesive film layer 8 on the surface of the core particles of the raised mesa 1-2.

This embodiment also provides a method for transferring light-emitting diode chips, which is used to realize the above-mentioned mass transfer of light-emitting diode chips. The separation layer 2 includes an etching cut-off layer, as shown in FIG. 10 and FIG. 12 . Specifically, it includes: firstly, the core particles of the raised mesa 1-2 are combined with the transfer substrate through the adhesive film layer 8; secondly, the light-emitting diode chip is placed in the etching solution 10, and the etching stop layer is corroded by the etching solution 10, Peel off the core particles of each raised mesa 1-2, as shown in Figure 13, so that the core particles of the raised mesa 1-2 are transferred to the transfer substrate through the adhesive film layer 8, and the core particles of the groove 1-1 remain in the transfer substrate. On the substrate 1, the core particles located in the groove 1-1 and the raised mesa 1-2 are separated.

This embodiment also provides a method for fabricating a display device, using any one of the fabrication and transfer methods for light-emitting diode chips above to achieve mass transfer.

This embodiment also provides a display device, which is fabricated and formed by using the above method for fabricating a display device.

It can be seen from the above technical solutions that the light-emitting diode chip provided by the present invention is a red-yellow light-emitting diode chip, which is formed by forming a plurality of grooves 1-1 in an array on the substrate 1, and each adjacent groove 1- 1. Form a raised table surface 1-2, and grow core particles on the bottom surface of each groove 1-1 and the raised table surface 1-2, so that the core particles are dislocated up and down, and the grooves 1-1 and convex The core particles of the mesa 1-2 are separated, so that the core particles of the groove 1-1 remain on the substrate 1, and the core particles of the raised mesa 1-2 are transferred to the transfer substrate. Mass transfer of light-emitting diode chips; , by setting the protective glue 7 on the sidewalls of each groove 1-1, the core particles located on the bottom surface of the groove 1-1 can be further prevented from being damaged during the mass transfer process, thereby improving the yield of the product.

This embodiment also provides a method for manufacturing and transferring a light-emitting diode chip, which is a method for manufacturing and transferring a red-yellow light-emitting diode chip. A raised mesa 1-2 is formed adjacent to the groove 1-1, and core particles are grown on the bottom surface of each groove 1-1 and the raised mesa 1-2, so that the bottom surface of the groove 1-1 and the raised mesa 1-2 are The core particles are formed up and down dislocation; and the separation layer 2 of the raised mesa 1-2 can be etched by the etching solution 10, so that the separation of the core particles of the groove 1-1 and the raised mesa 1-2 can be realized; It is simple, easy to implement, and low in cost. The transfer of a huge amount of micro-LEDs can be realized through the existing conventional adhesion process without complicated instruments and processes such as suction nozzles; at the same time, the transfer substrate during the transfer process can be reused.

Through the above-mentioned embodiments, the present invention also provides a method for manufacturing a display device. The above-mentioned corresponding manufacturing and transfer methods are used for the mass transfer process of light-emitting diode chips of various color systems, which can simplify the process and reduce the cost compared with the prior art. .

The present invention also provides a display device, which is formed by the above-mentioned display device manufacturing method, which can also simplify the process and reduce the cost.

The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same and similar parts between the various embodiments can be referred to each other. The above description of the disclosed embodiments enables any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, this application is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (14)

1. A light-emitting diode chip, characterized in that, comprising: a substrate, the surface of the substrate is provided with a plurality of grooves distributed in an array, each adjacent to the grooves forms a raised mesa, and the surface of the raised mesa is provided with a separation layer; A plurality of core particles respectively located on the bottom surface of the groove and the raised mesa, each of the core particles includes a first-type conductive layer, an active layer and a second-type conductive layer stacked in sequence along the surface of the substrate, stacked on the surface of the substrate. A first electrode in the local area of the first type conductive layer, and a second electrode stacked on the surface of the second type conductive layer. 2 . The light-emitting diode chip according to claim 1 , further comprising an adhesive film layer bonded to the surface of the core particles of the raised mesa. 3 . 3 . The light-emitting diode chip according to claim 1 , wherein the sidewalls of each of the grooves are inclined sidewalls. 4 . 4 . The light-emitting diode chip according to claim 3 , wherein the inclination angle of the sidewalls of each of the grooves is 45°. 5 . 5 . The light-emitting diode chip according to claim 1 , wherein a protective glue is adhered to the sidewalls of each of the grooves. 6 . 6 . The light-emitting diode chip of claim 5 , wherein the upper surface of the protective adhesive is lower than the upper surface of the raised mesa. 7 . 7 . The light-emitting diode chip of claim 1 , wherein the separation layer comprises a laser lift-off layer or an etching cut-off layer. 8 . 8. A manufacturing method of a light-emitting diode chip, wherein the manufacturing method of the light-emitting diode chip comprises: Step S1, providing a substrate, and forming a plurality of grooves distributed in an array and having inclined sidewalls on the surface of the substrate through an imprinting process, and each adjacent groove forms a raised mesa; Step S2, growing a separation layer on the surface of each of the raised mesa; Step S3, growing a light-emitting epitaxial structure, where the light-emitting epitaxial structure includes a first-type conductive layer, an active layer and a second-type conductive layer sequentially stacked along the surface of the substrate; Step S4, forming a first electrode in a local area of the first-type conductive layer, and forming a second electrode on the surface of the second-type conductive layer; Step S5, etching the inclined sidewalls of each of the grooves to form a scribe line, so that the bottom surface of each of the grooves and the raised mesa respectively form a number of independent core particles, and each of the core particles includes the edges along the substrate. A first-type conductive layer, an active layer, and a second-type conductive layer stacked in sequence on the surface, the first electrode stacked on the local area of the first-type conductive layer, and the first-type conductive layer stacked on the second-type conductive layer a second electrode on the surface; Step S6, adhering protective glue on the cutting road, and the upper surface of the protective glue is lower than the upper surface of the raised table; Step S7 , adhering an adhesive film layer on the surface of the core particles of the raised mesa. 9 . The method for manufacturing a light-emitting diode chip according to claim 8 , wherein the growing a separation layer on the surface of the raised mesa specifically comprises: growing a laser lift-off on the surface of the raised mesa. 10 . layer or etch stop layer. 10 . A method for transferring light-emitting diode chips, which is used to realize the mass transfer of light-emitting diode chips according to any one of claims 1 to 7 , wherein the transferring method for light-emitting diode chips comprises: first, transferring The core particles of the raised mesa are combined with the transfer substrate through the adhesive film layer; secondly, by peeling off the separation layer, the core particles of the raised mesa are transferred to the transfer substrate through the adhesive film layer superior. 11 . The transfer method of the light-emitting diode chip according to claim 10 , wherein the separation layer comprises a laser lift-off layer, and the transfer method of the light-emitting diode chip specifically comprises: first, transferring the core of the raised mesa. 12 . The particles are combined with the transfer substrate through the adhesive film layer; secondly, each of the laser peeling layers is irradiated by a laser to peel off the core particles of each of the raised mesa, so that the core particles of the raised mesa pass through the adhesive layer. The film layer is transferred to the transfer substrate, and the core particles of the grooves remain on the substrate. 12 . The transfer method of the light-emitting diode chip according to claim 11 , wherein the separation layer comprises an etching cut-off layer, and the transfer method of the light-emitting diode chip specifically comprises: first, transferring the core of the raised mesa. 13 . The particles are combined with the transfer substrate through the adhesive film layer; secondly, the light-emitting diode chip is placed in the etching solution, and the core particles of the raised mesa are peeled off by the etching solution to the etching cut-off layer, so that the The core particles of the raised mesa are transferred to the transfer substrate through the adhesive film layer, and the core particles of the groove remain on the substrate. 13. A method for fabricating a display device, characterized in that the mass transfer is realized by using the transfer method for light-emitting diode chips according to any one of claims 10-12. 14 . A display device, characterized in that, it is formed by using the method for manufacturing a display device according to claim 13 .

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