CN110890749B - Power supply reverse connection protection circuit and power supply circuit - Google Patents
Power supply reverse connection protection circuit and power supply circuitInfo
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- CN110890749B CN110890749B CN201911348174.6A CN201911348174A CN110890749B CN 110890749 B CN110890749 B CN 110890749B CN 201911348174 A CN201911348174 A CN 201911348174A CN 110890749 B CN110890749 B CN 110890749B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
- H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
- H02H11/003—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
- H02H11/005—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of too low isolation resistance, too high load, short-circuit; earth fault
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/0031—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using battery or load disconnect circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/0036—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using connection detecting circuits
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
本申请涉及一种电源防反接电路和电源电路。电源防反接电路中，开关模块利用两个开关管与P型MOS管搭配，可根据接地端的电平高低，关断或导通P型MOS管。在电源接入短路时，P型MOS管在主干路切断回路，从而保护外围电路的元器件。运用于电源充放电场合时，若电源正确接入，则可利用P型MOS管的低导通阻抗，实现大电流充放电而产生较小热升；若电源非正确接入，则主干路P型MOS管关断，电流回路断开，保护电源及外围电路。即，本申请实施例可用于单向防反接和双向防反接，具备通用性；同时，电路的功能强大，无需辅助电源，成本低廉，能够保护电源和外围电路不受损坏，具有高可靠性。
The present application relates to a power supply anti-reverse connection circuit and a power supply circuit. In the power supply anti-reverse connection circuit, the switch module uses two switch tubes in combination with a P-type MOS tube, which can turn off or turn on the P-type MOS tube according to the level of the ground terminal. When the power supply is short-circuited, the P-type MOS tube cuts off the loop in the main line, thereby protecting the components of the peripheral circuit. When used in power supply charging and discharging occasions, if the power supply is correctly connected, the low on-resistance of the P-type MOS tube can be used to achieve large current charging and discharging while generating a small heat rise; if the power supply is incorrectly connected, the main line P-type MOS tube is turned off, the current loop is disconnected, and the power supply and peripheral circuits are protected. That is, the embodiment of the present application can be used for unidirectional anti-reverse connection and bidirectional anti-reverse connection, and has versatility; at the same time, the circuit is powerful, does not require an auxiliary power supply, is low in cost, can protect the power supply and peripheral circuits from damage, and has high reliability.
Description
Technical Field
The application relates to the technical field of circuits, in particular to a power supply reverse connection preventing circuit and a power supply circuit.
Background
The power supply reverse connection preventing technology mainly comprises a physical layer reverse connection preventing technology and a circuit layer reverse connection preventing technology. The physical reverse connection prevention is realized by adopting a physical structure mode, such as mobile phone battery installation, reverse connection prevention interfaces and the like, and the mode is not flexible although the application is very wide. The circuit reverse connection prevention is realized by utilizing the integrated circuit IC (Integrated Circuit) and discrete components to match, so that the reverse connection prevention effect is automatically realized, and the normal operation of the circuit is protected.
In the implementation process, the inventor finds that at least the following problems exist in the prior art that the unidirectional reverse connection preventing circuit is single in design function and cannot be reused in reverse connection preventing of a charging and discharging integrated power supply.
Disclosure of Invention
Based on the above, it is necessary to provide a power supply anti-reverse connection circuit and a power supply circuit for solving the problem that the conventional circuit anti-reverse connection is not suitable for the bidirectional charge and discharge occasion.
In order to achieve the above object, in one aspect, an embodiment of the present application provides a reverse connection preventing circuit for a power supply, including:
The drain electrode of the P-type MOS tube is used for being connected with a first electrode of a direct current power supply, and the source electrode of the P-type MOS tube is used for being connected with a voltage transmission port;
The grounding end is used for connecting a second electrode of the direct current power supply;
The switch module comprises a first switch tube and a second switch tube; the first pole of the first switch tube is connected with the grid electrode of the P-type MOS tube and is connected with the source electrode of the P-type MOS tube through a first resistor; the second pole of the second switching tube is connected with the first electrode of the direct current power supply, and the control pole of the second switching tube is connected with the grounding end;
And when the level of the grounding end of the switch module is greater than 0V, the P-type MOS tube is turned off.
In one embodiment, the first switching tube is an NPN triode or an N MOS tube;
the second switching tube is an NPN triode or an N MOS tube.
In one embodiment, the power supply anti-reverse connection circuit further comprises:
And the current suppression circuit is connected between the drain electrode of the P-type MOS tube and the first electrode of the direct current power supply.
In one embodiment, the current suppressing circuit includes an inductor;
the first end of the inductor is connected with the drain electrode of the P-type MOS tube, and the second end of the inductor is used for being connected with the first electrode of the direct current power supply.
In one embodiment, the power supply anti-reverse connection circuit further comprises:
The voltage suppression circuit is characterized in that a first end of the voltage suppression circuit is connected with the drain electrode of the P-type MOS tube, and a second end of the voltage suppression circuit is connected with the grounding end.
In one embodiment, the voltage suppression circuit includes a first capacitor;
The first end of the first capacitor is connected with the drain electrode of the P-type MOS tube, and the second end of the first capacitor is connected with the grounding end.
In one embodiment, the power supply anti-reverse connection circuit further comprises a second capacitor;
The first end of the second capacitor is connected with the grid electrode of the P-type MOS tube, and the second end of the second capacitor is connected with the grounding end.
In one embodiment, the power supply anti-reverse connection circuit further comprises:
The third resistor is connected between the first pole of the first switching tube and the grid electrode of the P-type MOS tube;
and the fourth resistor is connected between the control electrode of the second switching tube and the ground terminal.
In one embodiment, the power supply reverse connection preventing circuit further comprises a charge and discharge module. The first transmission port of the charge-discharge module is connected with the voltage transmission port, and the second transmission port of the charge-discharge module is connected with the grounding end.
In another aspect, an embodiment of the present application further provides a power supply circuit, including:
A direct current power supply;
Such as the power supply anti-reverse circuit described above.
One of the above technical solutions has the following advantages and beneficial effects:
Based on the structure, the switch module utilizes the two switch tubes to be matched with the P-type MOS tube, and the P-type MOS tube can be turned off or turned on according to the level of the grounding end. When the power supply is connected into a short circuit, the P-type MOS tube cuts off a loop in the trunk, so that components of the peripheral circuit are protected. When the power supply is used in a power supply charging and discharging field, if the power supply is correctly connected, the low on-resistance of the P-type MOS tube can be utilized to realize large-current charging and discharging to generate smaller heat rise, and if the power supply is incorrectly connected, the main P-type MOS tube is turned off, and a current loop is disconnected to protect the power supply and peripheral circuits. The embodiment of the application can be used for unidirectional reverse connection prevention and bidirectional reverse connection prevention, has universality, has strong functions of the circuit, does not need an auxiliary power supply, has low cost, can protect the power supply and the peripheral circuit from being damaged, and has high reliability.
Drawings
The foregoing and other objects, features and advantages of the application will be apparent from the following more particular description of preferred embodiments of the application, as illustrated in the accompanying drawings. Like reference numerals refer to like parts throughout the drawings, and the drawings are not intentionally drawn to scale on actual size or the like, with emphasis on illustrating the principles of the application.
FIG. 1 is a first schematic block diagram of a power supply anti-reverse circuit in one embodiment;
FIG. 2 is a second schematic block diagram of a power supply anti-reverse circuit in one embodiment;
FIG. 3 is a third schematic block diagram of a power supply anti-reverse circuit in one embodiment;
FIG. 4 is a fourth schematic block diagram of a power supply anti-reverse circuit in one embodiment;
fig. 5 is a schematic diagram of a power circuit in one embodiment.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to and integrated with the other element or intervening elements may also be present. The terms "first pole," "second pole," "first end," and "second end," and the like, are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
At present, the physical layer reverse connection prevention and the circuit layer reverse connection prevention in the industry are applied in a large quantity, and for the occasions of complicated circuits, higher integration level, high power and the like, the physical structure type reverse connection prevention is selected, the production and the manufacture are easy, and for the occasions of customized products, high freedom degree and the like, the circuit level reverse connection prevention is more suitable. However, the physical reverse connection preventing structure like 18650 battery cannot design an effective reverse connection preventing interface, the common reverse connection preventing circuit is single in design function, can only be used as reverse connection preventing circuit of a single direction circuit, cannot be reused in reverse connection preventing of a lithium battery integrated with charge and discharge, and the power supply reverse connection preventing circuit with high reliability generally needs logic control, needs auxiliary power supply addition, and is complicated in design and high in cost.
Therefore, the multipurpose power supply anti-reverse connection circuit provided by the embodiment of the application has the advantage of being capable of expanding application, is suitable for a common power supply anti-reverse connection circuit, is also suitable for a relatively complex charge-discharge integrated lithium battery anti-reverse connection circuit, and greatly improves the universality and universality of the anti-reverse connection circuit. In industrial production and manufacture or consumer electronics manufacturing, higher security assurance can be provided for users.
Specifically, the embodiment of the application realizes the reverse connection preventing function under various application backgrounds with extremely low cost by matching the switch tube and the P-type MOS tube, and can be flexibly applied to different occasions, and the main characteristics include:
1. The anti-reverse connection circuit with general properties is replaced, after the reverse connection of the power supply is detected, the P-type MOS tube switch is quickly turned off, the system current loop is disconnected, and the reliability is high.
2. The method is applicable to a lithium battery charge-discharge integrated circuit. The charging and discharging of the lithium battery are carried out bidirectionally, and the common solution is to use physical structural design to do reverse connection prevention treatment, but the mode obviously increases the structural design difficulty. The embodiment of the application can drive a P-type MOS (Metal-Oxide-Semiconductor Field-Effect Transistor) to be turned on or off by utilizing the logic cooperation of 2 switching tubes, thereby realizing the reverse connection prevention of a circuit stage integrating charge and discharge.
3. The embodiment of the application has the advantages of low cost and high reliability, utilizes a plurality of discrete elements, realizes the general function reverse connection prevention circuit design in a logic mode of pure hardware, does not need the participation of a controller and an auxiliary power supply, simplifies the design difficulty and reduces the difficulty of circuit application.
In one embodiment, a power supply anti-reverse connection circuit is provided, as shown in fig. 1, comprising:
the drain electrode of the P-type MOS tube is used for being connected with a first electrode of a direct current power supply, and the source electrode of the P-type MOS tube is used for being connected with a voltage transmission port.
And the grounding end is used for connecting with a second electrode of the direct current power supply.
The switch module comprises a first switch tube and a second switch tube. The first pole of the first switch tube is connected with the grid electrode of the P-type MOS tube and is connected with the source electrode of the P-type MOS tube through a first resistor, and the second pole of the first switch tube is connected with the grounding end. The first electrode of the second switching tube is connected with the control electrode of the first switching tube and is connected with the source electrode of the P-type MOS tube through the second resistor, the second electrode of the second switching tube is used for being connected with the first electrode of the direct-current power supply, and the control electrode of the second switching tube is connected with the grounding end.
And when the level of the grounding end of the switch module is greater than 0V, the P-type MOS tube is turned off.
Specifically, the power supply reverse connection prevention circuit comprises a P-type MOS tube, a grounding end and a switch module. The drain electrode of the P-type MOS tube is connected with the first electrode of the direct current power supply, and the source electrode of the P-type MOS tube is connected with the voltage transmission port and can be used for switching off or switching on a loop between the direct current power supply and the voltage transmission port. The grounding end is connected with the second electrode of the direct current power supply, and each electrode connected with the grounding end is electrically connected with the second electrode of the direct current power supply. The switch module can drive the P-type MOS tube to be turned off or turned on according to the level of the grounding end. The switching module comprises at least two switching tubes, wherein the drain electrode of the P-type MOS tube is connected with a first electrode of a direct current power supply, the grid electrode of the P-type MOS tube is connected with a first electrode of the first switching tube, the source electrode of the P-type MOS tube is connected with a power supply transmission port, the source electrode of the P-type MOS tube is connected with the first electrode of the first switching tube through a first resistor and is respectively connected with the first electrode of a second switching tube and a control electrode of the first switching tube through a second resistor, the second electrode of the first switching tube is connected with a grounding end, the second electrode of the second switching tube is connected with the first electrode of the direct current power supply, and the control electrode is connected with the grounding end. The second switching tube can be switched on or off according to the level of the grounding end, and further, the first switching tube can be switched on or off according to the state of the second switching tube, so that the gate source voltage of the P-type MOS tube can be changed, the P-type MOS tube is switched on or off, and on-off control between the direct current power supply and the voltage transmission port is realized. For example, when the dc power supply is reversely connected, the level of the ground terminal is pulled up, and the first switching tube in the switching module can be kept in an off state, so that the P-type MOS tube is cut off, and then the power supply loop is disconnected, so as to protect the power supply and the peripheral circuit.
In one example, when the direct current power supply is correctly connected, the P-type MOS tube is conducted due to the existence of the body diode, the switching tube is conducted to provide a stable power supply for the power supply transmission port, the self-conduction voltage drop of the body diode is larger, the power consumption is larger, at the moment, the first switching tube in the switching module can be kept in a conducting state due to the fact that the level of the grounding end is 0, so that the P-type MOS tube is completely conducted, electric energy is output from the MOS tube with low conducting resistance, the power supply transmission port passes through the safe power supply, and meanwhile the power consumption of the MOS tube is greatly reduced.
Based on the above, whether the direct current power supply discharges the voltage transmission port or charges the direct current power supply at the voltage transmission port, the switch module can determine whether the direct current power supply is reversely connected according to the level change of the grounding end, and can turn off the power supply loop through the P-type MOS tube when the reverse connection of the direct current power supply occurs.
It should be noted that, the drain electrode of the P-type MOS tube is connected to the first electrode of the dc power supply, and the source electrode is connected to the voltage transmission port, and the instantaneous current when the dc power supply is correctly connected can be transmitted from the source electrode through the body diode of the P-type MOS tube, which may be a P-channel MOS tube, for example. The first switch tube and the second switch tube can select corresponding types of switch triodes or MOS tubes and the like according to actual requirements on the premise of realizing the logic function, and meanwhile, the first resistor and the second resistor can be used for protecting the switch tube, and the resistance value of the switch tube can be set according to the actual circuit requirements. It should be noted that the circuit connection structure in the switch module may be designed according to actual requirements, the type of the switch tube is related to a specific circuit design, and is not limited herein, and meanwhile, the switch module may also include other switch tubes or devices for protecting, expanding or matching the working requirements of the peripheral circuit, such as a current limiting resistor, a pull-up resistor, an inverter, a voltage dividing resistor, and the like, which are not limited herein. It should also be noted that, the switching tube and the MOS tube in the embodiment of the present application can both work in the saturation and cut-off regions, and perform the switching function without amplification requirements, that is, the embodiment of the present application can implement the reverse connection prevention of the bidirectional circuit by using the hardware logic relationship, and has high reliability and stability.
The voltage transmission port is used for connecting an external system or peripheral circuit and the like, and specifically, the voltage transmission port can supply power to the system based on a direct current power supply and can charge the direct current power supply based on the system. The direct current power supply related to the embodiment of the application can be a direct current power supply for supplying power to the system, can also be a reserve battery of the system, and can supply power to the system and also can accept the charging of the system.
The circuit topology structure of the embodiment of the application has the characteristics of high reliability, low cost, strong universality and the like, can support expansion and application to different directions, and supports reverse connection prevention of the circuit in the two-way charge and discharge occasion. The embodiment of the application can be used for occasions needing reverse connection prevention in the traditional sense, does not need an auxiliary power supply, has low cost, is realized by adopting pure hardware, has simple circuit topology and has high reliability.
The embodiment of the application supports the application of charge and discharge management of the lithium battery, can prevent the system from being damaged in an unrecoverable way due to reverse connection prevention of the battery, can normally supply power to the system when the lithium battery is normally connected, can charge the lithium battery by an external power supply to realize the integration of a bidirectional circuit, and can drive the P-type MOS tube to cut off a current loop according to the level change of a grounding end when the lithium battery is reversely connected, thereby achieving the purpose of protecting the system.
In one embodiment, as shown in fig. 2, the first switching transistor Q1 is an NPN transistor.
Specifically, the first switching tube Q1 may be an NPN transistor, the collector is connected to the gate of the P-type MOS tube Q3 and connected to the source of the P-type MOS tube Q3 through a first resistor, the emitter of the first switching tube Q1 is connected to the ground terminal, the base is connected to the first pole of the second switching tube Q2 and connected to the source of the P-type MOS tube Q3 through a second resistor. Further, the first resistor can be a pull-up resistor, can play a role in current limiting, and can be set according to actual circuit requirements.
In one embodiment, the first switching tube is an N-type MOS tube.
Specifically, the first switch tube can be an N-type MOS tube, the drain electrode of the first switch tube is connected with the grid electrode of the P-type MOS tube and is connected with the source electrode of the P-type MOS tube through the first resistor, the source electrode of the first switch tube is connected with the grounding end, the grid electrode of the first switch tube is connected with the first electrode of the second switch tube, and the drain electrode of the first switch tube is connected with the source electrode of the P-type MOS tube through the second resistor.
In one embodiment, as shown in fig. 2, the second switching transistor Q2 is an NPN transistor.
Specifically, the collector of the second switching tube Q2 is connected with the control electrode of the first switching tube Q1 and is connected with the source electrode of the P-type MOS tube Q3 through a second resistor, the emitter of the second switching tube Q2 is connected with the first electrode of the direct current power supply, and the base is connected with the grounding end and is connected with the second electrode of the direct current power supply. Further, the second resistor can be a pull-up resistor, can play a role in current limiting, and can be set according to actual circuit requirements.
In one embodiment, the second switching tube is an N-type MOS tube.
Specifically, the drain electrode of the second switching tube is connected with the control electrode of the first switching tube and the source electrode of the P-type MOS tube through the second resistor, the source electrode of the second switching tube is connected with the first electrode of the direct current power supply, and the grid electrode of the second switching tube is connected with the grounding end and the second electrode of the direct current power supply.
In one embodiment, the power supply anti-reverse connection circuit further comprises:
And the current suppression circuit is connected between the drain electrode of the P-type MOS tube and the first electrode of the direct current power supply.
Specifically, a current suppression circuit is arranged between the drain electrode of the P-type MOS tube and the first electrode of the direct current power supply. The current suppression circuit is used for suppressing current transient when the direct current power supply is connected, reducing impact on the MOS tube at the moment of connecting the direct current power supply, protecting the MOS tube and further improving the reliability of the embodiment of the application. The current suppressing circuit may be implemented by an existing inrush current suppressing circuit, may be implemented mainly by an inductor, and may be set according to an actual power specification, which is not particularly limited herein.
In one embodiment, the current suppressing circuit comprises an inductor, wherein a first end of the inductor is connected with a drain electrode of the P-type MOS tube, and a second end of the inductor is used for being connected with a first electrode of the direct current power supply.
Specifically, an inductor is arranged between the drain electrode of the P-type MOS tube and the first electrode of the direct current power supply, so that current transient can be restrained, impact of the direct current power supply on the MOS tube at the moment of access is slowed down, and the cost of the current restraining circuit is reduced.
In one embodiment, the power supply anti-reverse connection circuit further comprises:
The voltage suppression circuit is characterized in that a first end of the voltage suppression circuit is connected with the drain electrode of the P-type MOS tube, and a second end of the voltage suppression circuit is connected with the grounding end.
Specifically, a voltage suppression circuit is arranged between the drain electrode of the P-type MOS tube and the second electrode of the direct current power supply, and the voltage suppression circuit can be used for suppressing voltage abrupt change of the source electrode of the P-type MOS tube, so that impact on the MOS tube caused by power supply access in the moment is relieved, the MOS tube is protected, and the reliability of the embodiment of the application is further improved. The voltage suppression circuit may be implemented by an existing surge voltage suppression circuit, may be implemented mainly by a capacitor, and may be set according to an actual power specification, which is not particularly limited herein.
In one embodiment, the voltage suppression circuit comprises a first capacitor, wherein a first end of the first capacitor is connected with a drain electrode of the P-type MOS tube, and a second end of the first capacitor is connected with a grounding end.
Specifically, a first capacitor is arranged between the drain electrode of the P-type MOS tube and the second electrode of the direct current power supply, and the first capacitor can be used for inhibiting voltage abrupt change of the source electrode of the P-type MOS tube, so that impact on the MOS tube caused by power supply access in the moment is relieved, and the cost of the voltage inhibition circuit is reduced.
In one embodiment, the power supply anti-reverse connection circuit further comprises a second capacitor, a first end of the second capacitor is connected with the grid electrode of the P-type MOS tube, and a second end of the second capacitor is connected with the grounding end.
Specifically, a second capacitor is further arranged between the grid electrode of the P-type MOS tube and the second electrode of the direct current power supply, and the second capacitor is used as a bypass capacitor and can be used for preventing impact on the grid electrode of the P-type MOS tube and protecting the MOS tube, so that the reliability of the embodiment of the application is further improved.
In one embodiment, the power supply anti-reverse connection circuit further comprises:
and the third resistor is connected between the first pole of the first switching tube and the grid electrode of the P-type MOS tube.
Specifically, a third resistor is arranged between the first pole of the first switching tube and the grid electrode of the P-type MOS tube, so that the third resistor can play a role in buffering, prevent impact on the grid electrode of the P-type MOS tube, protect the MOS tube and further improve the reliability of the embodiment of the application.
In one embodiment, the power supply anti-reverse connection circuit further comprises:
and the fourth resistor is connected between the control electrode of the second switching tube and the ground terminal.
Specifically, a fourth resistor is arranged between the control electrode of the second switching tube and the grounding end, so that the current limiting effect can be achieved, the impact of the direct current power supply on the second switching tube is prevented, the switching module is protected, and the reliability of the embodiment of the application is further improved.
In one example, as shown in fig. 3, V OUT is used to provide a safe power supply for the system of the later stage, the DC power supply DC is connected, the power supply DC is connected normally when the upper positive and the lower negative are, since the GND (ground terminal) level is 0, the base input current of Q2 is 0, the NPN transistor Q2 is turned off, at this time, the base level of Q1 is pulled up, the NPN transistor Q1 is saturated and turned on, the collector level of Q1 is pulled down, vgs of the P-type MOS transistor Q3 is-V DC, so Q3 is turned on, and the output voltage V OUT provides a safe power supply for the system. Once the direct current power supply DC is reversely connected, the analysis is as above, the P-type MOS tube Q3 is turned off, the power supply current loop is turned off, and the system is safely protected.
Specifically, at the moment of DC power supply DC access, the inductor L1 inhibits current transient, and the first capacitor C1 inhibits source voltage mutation of the P-type MOS tube Q3, so that impact on the MOS tube at the moment of power supply access is slowed down, and the MOS tube is protected from being damaged. The power supply is connected in a positive mode and a negative mode, the P-type MOS tube Q3 is connected in a positive mode due to the fact that the self-body diode exists, the switching tube is conducted, and a stable power supply is provided for the system. But the self-conduction voltage drop of the body diode is larger, and the power consumption is larger. Then, as GND level is 0, the base input current of Q2 is 0, and the NPN triode Q2 is turned off, at the moment, the base level of Q1 is pulled high, the NPN triode Q1 is saturated and turned on, the collector level of Q1 is pulled low, vgs of the P type MOS tube Q3 is-V DC, so that Q3 is completely turned on, electric energy provided for a system by passing through a body diode at the moment of access is changed into electric energy output by a MOS tube with low on-resistance to provide a safe power supply for the system, and meanwhile, the self power consumption of the MOS tube is greatly reduced. However, once the DC power DC is reversely grounded, the ground level is pulled high, the positive input voltage is pulled low, the base level of Q2 is pulled high, and the NPN transistor Q2 is turned on, at this time, the base level of Q1 is pulled low, the NPN transistor Q1 is turned off, the collector level of Q1 is pulled high, vgs of the P-type MOS transistor Q3 is V OUT is equal to or greater than 0, so that Q3 is turned off, and the power supply loop is turned off, thereby achieving the purpose of reverse connection prevention. The P-type MOS tube is turned off, the power supply current loop is turned off, and the system is safely protected.
In one embodiment, the power supply reverse connection preventing circuit further comprises a charging and discharging module, wherein a first transmission port of the charging and discharging module is connected with a voltage transmission port, and a second transmission port of the charging and discharging module is connected with a grounding end.
Specifically, the power supply reverse connection preventing circuit can be further provided with a charging and discharging module. The first transmission port of the charge-discharge module is connected with the voltage transmission port, the second transmission port is connected with the second electrode of the direct-current power supply, and based on the first transmission port, the charge-discharge module can supply power to a system or a peripheral circuit based on the direct-current power supply, and can charge the direct-current power supply based on an external power supply. Further, the charge and discharge module may further include a first electrode and a second electrode for connecting an external circuit. In one example, the charge-discharge module further comprises a power port for connecting to a system power source, based on which the system power source can be used as a main power source of the system or peripheral circuit and the direct current power source can be used as a standby power source, and the system power source can supply power to the system or peripheral circuit and can charge the direct current power source through the charge-discharge module. Specifically, the charge-discharge module may be used for charge-discharge management of a dc power supply, and may be mainly composed of a charge-discharge chip, a power port, and the like, and is not particularly limited.
In one example, as shown in fig. 4, V SYS is used to provide a safe power supply for the system of the subsequent stage, where V2 is used as a charge-discharge power interface, a voltage can be supplied to the system, or a total power supply of the system is used as a lithium battery charging interface, so long as the lithium battery is normally connected in the positive and negative directions, GND level is 0, the base input current of Q2 is 0, NPN transistor Q2 is turned off, the base level of Q1 is pulled high, NPN transistor Q1 is saturated and turned on, the collector level of Q1 is pulled low, vgs of P-type MOS transistor Q3 is-V Battery, so Q3 is turned on, the output voltage or input voltage is V2, a safe power supply is provided for the system, the output voltage through the lithium battery charging-discharging module is V SYS, or the total power supply of the system safely charges the lithium battery through the lithium battery charging-discharging management scheme. However, once the lithium battery is reversely connected, the P-type MOS tube is turned off after analysis, and the charging and discharging loop of the lithium battery is cut off, so that the safety of the system and the lithium battery is protected. Further, if the system main power is connected at this time, the system can still work normally.
In particular, considering that improper factory production or improper use of a user can lead to reverse access of a lithium battery to a circuit, the embodiment of the application can also be used in a circuit for preventing a reverse connection object from being a lithium battery. Specifically, VCC is the total power supply of the system, lithium battery is used as auxiliary power supply, when VCC is used as the power supply of the system, lithium battery can be charged, and when VCC is not connected, the auxiliary power supply lithium battery supplies power to the system. If the lithium battery is reversely connected and VCC is not connected, the lithium battery provides energy for the system, and the system can be damaged due to negative voltage connection, so that irreversible damage is caused.
The system main power supply and the auxiliary power supply lithium battery can supply power for the system through the charging and discharging module, and the system output power supply is only one V SYS. The system can work when any one of a system main power supply and a lithium battery exists. Because the reverse connection preventing circuit is arranged, the system can not be damaged even if the lithium battery is reversely connected, and if the total power supply of the system exists at the moment, the system can still work normally.
The lithium battery is normally connected, the inductor L1 inhibits current transient, and the first capacitor C1 inhibits source voltage mutation of the P-type MOS tube, so that impact on the MOS tube caused by the instant of connecting a power supply is relieved, and the MOS tube is protected from being damaged. And the upper part and the lower part of the lithium battery are connected in a positive mode, if no system total power supply VCC is connected in, the P-type MOS tube is connected with the switching tube due to the existence of the self-body diode, and a stable power supply is provided for the system. But the self-conduction voltage drop of the body diode is larger, and the power consumption is larger. Then, as GND level is 0, the base input current of Q2 is 0, as NPN triode Q2 is turned off, at this moment, the base level of Q1 is pulled high, NPN triode Q1 is saturated and turned on, Q1 collector level is pulled low, vgs of P MOS tube Q3 is-V Battery, so Q3 is completely turned on, electric energy provided for the system by the instant of being accessed and flowing through the body diode is changed into electric energy output by the MOS tube with low on-resistance, and then safety power supply V SYS is provided for the system, and meanwhile, the power consumption of the MOS tube is greatly reduced.
If the system total power supply VCC is connected, as described above, the Vgs of the P-type MOS transistor Q3 is-V Battery, Q3 is completely conducted, and the system total power supply is converted into V2, so that the lithium battery can be managed and charged. Once the lithium battery is reversely connected, the ground level is pulled high, the positive input voltage is pulled down, the base level of Q2 is pulled high, the negative input voltage is used as an NPN triode Q2 to be conducted, the base level of Q1 is pulled down, the NPN triode Q1 is turned off, the collector level of Q1 is pulled high, vgs of the P type MOS tube Q3 is V2 or more than or equal to 0, so that Q3 is turned off, a battery access loop is turned off, the charging or discharging of the lithium battery is not carried out, the reverse connection preventing purpose is achieved, the system is protected, and at the moment, the access system total power sources VCC and V SYS are normally output, and normal operation of the system is not influenced.
In one embodiment, there is provided a power supply circuit including:
A direct current power supply;
Such as the power supply anti-reverse circuit described above.
Specifically, the power supply reverse connection preventing circuit is connected with two electrodes of the direct current power supply, and when the direct current power supply is reversely connected, the power supply loop is timely disconnected, so that the power supply and the peripheral circuit are protected. The direct current power supply can be a unidirectional power supply or a charging and discharging power supply.
In one example, as shown in fig. 5, V1 may be a dc power source that provides power to the system, or may be a reserve power source (lithium battery) for the system. As long as V1 is connected correctly without reverse connection, the base input current of Q2 is 0, and is used as the turn-off of NPN triode Q2, at the moment, the base level of Q1 is pulled high, NPN triode Q1 is saturated and turned on, the collector level of Q1 is pulled low, vgs of P MOS tube Q3 is-V1, so that Q3 is turned on, and based on the above, the reverse connection preventing function can be realized in the same circuit topology by the two-way charge and discharge of the connected power supply. Once V1 is reversely connected, the ground level is pulled high, the positive input voltage is pulled down, the base level of Q2 is pulled high, the NPN type triode Q2 is turned on, at the moment, the base level of Q1 is pulled down, the NPN type triode Q1 is turned off, the collector level of Q1 is pulled high, vgs of the P type MOS tube Q3 is V2-V1 (V1=0V), so that Q3 is turned off, and the power supply loop is turned off, thereby achieving the purpose of reverse connection prevention.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the present application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of the application should be assessed as that of the appended claims.
Claims (10)
1. A reverse connection preventing circuit for a power supply, comprising:
the drain electrode of the P-type MOS tube is used for being connected with a first electrode of a direct current power supply, and the source electrode of the P-type MOS tube is used for being connected with a voltage transmission port;
The grounding end is used for connecting a second electrode of the direct current power supply;
The switching module comprises a first switching tube and a second switching tube, wherein a first electrode of the first switching tube is connected with a grid electrode of the P-type MOS tube and is connected with a source electrode of the P-type MOS tube through a first resistor, a second electrode of the first switching tube is connected with a grounding end, a first electrode of the second switching tube is connected with a control electrode of the first switching tube and is connected with the source electrode of the P-type MOS tube through a second resistor, a second electrode of the second switching tube is connected with a first electrode of the direct current power supply, a control electrode of the second switching tube is connected with the grounding end, the second switching tube is conducted or cut off according to the level of the grounding end, and the first switching tube is conducted or cut off according to the state of the second switching tube so as to change the grid source voltage of the P-type MOS tube and conduct or cut off the P-type MOS tube;
And when the level of the grounding end is greater than 0V, the switch module turns off the P-type MOS tube.
2. The power supply anti-reverse connection circuit according to claim 1, wherein,
The first switch tube is an NPN triode or an N MOS tube;
the second switching tube is an NPN triode or an N MOS tube.
3. The power supply anti-reverse circuit of claim 1, further comprising:
and the current suppression circuit is connected between the drain electrode of the P-type MOS tube and the first electrode of the direct current power supply.
4. The power supply anti-reverse circuit of claim 3 wherein the current suppressing circuit comprises an inductance;
The first end of the inductor is connected with the drain electrode of the P-type MOS tube, and the second end of the inductor is used for being connected with the first electrode of the direct current power supply.
5. The power supply anti-reverse circuit of claim 1, further comprising:
The first end of the voltage suppression circuit is connected with the drain electrode of the P-type MOS tube, and the second end of the voltage suppression circuit is connected with the grounding end.
6. The power supply anti-reverse circuit of claim 5, wherein the voltage suppression circuit comprises a first capacitor;
the first end of the first capacitor is connected with the drain electrode of the P-type MOS tube, and the second end of the first capacitor is connected with the grounding end.
7. The power supply anti-reverse connection circuit according to any one of claims 1 to 6, further comprising a second capacitor;
the first end of the second capacitor is connected with the grid electrode of the P-type MOS tube, and the second end of the second capacitor is connected with the grounding end.
8. The power supply anti-reverse connection circuit according to any one of claims 1 to 6, further comprising:
The third resistor is connected between the first pole of the first switch tube and the grid electrode of the P-type MOS tube;
And the fourth resistor is connected between the control electrode of the second switching tube and the grounding end.
9. The reverse power supply circuit according to any one of claims 1 to 6, further comprising a charge-discharge module;
the first transmission port of the charge-discharge module is connected with the voltage transmission port, and the second transmission port of the charge-discharge module is connected with the grounding end.
10. A power supply circuit, comprising:
A direct current power supply;
A power supply anti-reverse circuit as claimed in any one of claims 1 to 9.
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| CN201911348174.6A CN110890749B (en) | 2019-12-24 | 2019-12-24 | Power supply reverse connection protection circuit and power supply circuit |
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| CN201911348174.6A CN110890749B (en) | 2019-12-24 | 2019-12-24 | Power supply reverse connection protection circuit and power supply circuit |
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| CN111864718A (en) * | 2020-08-14 | 2020-10-30 | 精进电动科技股份有限公司 | A kind of anti-reverse connection circuit, electronic parking circuit and control method |
| CN112787319B (en) * | 2020-12-28 | 2022-07-15 | 潍柴动力股份有限公司 | Reverse connection prevention circuit and control method |
| CN113659818B (en) * | 2021-08-06 | 2023-04-18 | 深圳信息职业技术学院 | An ideal diode circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108462163A (en) * | 2017-02-20 | 2018-08-28 | 成都鼎桥通信技术有限公司 | Meet the direct current reverse-connection preventing circuit of negative sense surge requirement |
| CN211266476U (en) * | 2019-12-24 | 2020-08-14 | 广州致远电子有限公司 | Power supply reverse connection prevention circuit and power supply circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2011259627A (en) * | 2010-06-09 | 2011-12-22 | Panasonic Corp | Power supply reverse connection protective circuit |
| CN204068246U (en) * | 2014-03-14 | 2014-12-31 | 湖南芯丰微电子有限责任公司 | A kind of low pressure drop low-power dissipation power supply protective circuit |
| CN106451657B (en) * | 2016-11-14 | 2023-08-15 | 广州金升阳科技有限公司 | Reverse connection prevention protection circuit and reverse connection prevention control method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108462163A (en) * | 2017-02-20 | 2018-08-28 | 成都鼎桥通信技术有限公司 | Meet the direct current reverse-connection preventing circuit of negative sense surge requirement |
| CN211266476U (en) * | 2019-12-24 | 2020-08-14 | 广州致远电子有限公司 | Power supply reverse connection prevention circuit and power supply circuit |
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