CN110928074B - Silicon-based liquid crystal device, manufacturing method thereof and silicon-based liquid crystal display panel - Google Patents
Silicon-based liquid crystal device, manufacturing method thereof and silicon-based liquid crystal display panel Download PDFInfo
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- CN110928074B CN110928074B CN201911302493.3A CN201911302493A CN110928074B CN 110928074 B CN110928074 B CN 110928074B CN 201911302493 A CN201911302493 A CN 201911302493A CN 110928074 B CN110928074 B CN 110928074B
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 130
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 78
- 239000010703 silicon Substances 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 230000004888 barrier function Effects 0.000 claims description 31
- 238000009413 insulation Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 22
- 238000010586 diagram Methods 0.000 description 20
- 230000010287 polarization Effects 0.000 description 6
- 239000003292 glue Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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Abstract
The invention provides a silicon-based liquid crystal device, a manufacturing method thereof and a silicon-based liquid crystal display panel, wherein the silicon-based liquid crystal device comprises: a substrate having a pixel electrode signal line and a common electrode signal line insulated from each other; and the plurality of pixels are arranged on the substrate, each pixel comprises at least one pixel electrode and a public electrode surrounding the periphery of the pixel electrode, the public electrode and the pixel electrode are mutually insulated, the pixel electrode is electrically connected with the pixel electrode signal line, and the public electrode is electrically connected with the public electrode signal line. According to the technical scheme, the liquid crystal can rotate in the horizontal direction under the action of the electric field, so that the contrast of the silicon-based liquid crystal display panel is improved, and the driving voltage is reduced.
Description
Technical Field
The invention relates to the field of liquid crystal display, in particular to a silicon-based liquid crystal device, a manufacturing method thereof and a silicon-based liquid crystal display panel.
Background
A Liquid Crystal On Silicon (LCOS) display panel is a reflective lcd micro panel, which uses semiconductor silicon technology to control Liquid Crystal and then "project" color pictures, and has the characteristics of high light utilization efficiency, small volume, high aperture ratio, mature manufacturing technology, and the like, and can easily realize high resolution and sufficient color expression.
The existing LCOS display panels are all vertically driven (i.e. TN type), and the contrast ratio thereof is relatively low due to innate reasons. Horizontal driving methods such as IPS (In Plane Switch, lateral electric Field drive), FFS (Fringe Field Switching), and ADS (Advanced-super Dimensional Switching) have high contrast, but require a large pixel size, making them difficult to apply to the liquid crystal on silicon display panel. Referring to fig. 1a and 1b, fig. 1a and 1b are schematic diagrams of a top view structure and a cross-sectional structure of an IPS device, fig. 1b is a schematic diagram of a cross-section along direction AA in fig. 1a, and as can be seen from fig. 1a and 1b, a common electrode 13 is horizontally laid on a substrate (not shown), a gate electrode 11 and the like are formed in the substrate, a pixel electrode 12 is located above the common electrode 13, the pixel electrode 12 is separated from the common electrode 13 by an insulating layer (not shown), and the pixel electrode 12 is electrically connected to a circuit (not shown) in the substrate. Referring to fig. 2a and 2b, fig. 2a and 2b are schematic diagrams of a top view structure and a cross-sectional structure of the FFS and ADS device, fig. 2b is a schematic diagram of a cross-section along BB direction in fig. 2a, and as can be seen from fig. 2a and 2b, the common electrode 23 is also horizontally laid on a substrate (not shown) in which a gate electrode 21 and the like are formed, the pixel electrode 22 is located below the common electrode 23, the pixel electrode 22 is isolated from the common electrode 23 by an insulating layer (not shown), and the pixel electrode 22 is electrically connected to a circuit (not shown) in the substrate. As can be seen from the above, since the pixel electrode and the common electrode are both horizontally formed on the substrate, the pixel size is larger, and the current requirements for the pixel size of the liquid crystal on silicon product are smaller and smaller, so that the pixel electrode and the common electrode with a horizontal structure are difficult to be applied to the liquid crystal on silicon display panel.
Therefore, how to improve the structures of the conventional pixel electrode and the common electrode and apply the improved structures to the LCOS display panel to improve the contrast of the LCOS display panel is a problem that needs to be solved at present.
Disclosure of Invention
The invention aims to provide a silicon-based liquid crystal device, a manufacturing method thereof and a silicon-based liquid crystal display panel, which enable liquid crystal to rotate in the horizontal direction under the action of an electric field, and further enable the contrast of the silicon-based liquid crystal display panel to be improved and the driving voltage to be reduced.
To achieve the above object, the present invention provides a liquid crystal on silicon device comprising:
the display device comprises a substrate, a pixel electrode signal wire, a common electrode signal wire and a pixel electrode signal wire, wherein the pixel electrode signal wire and the common electrode signal wire are mutually insulated; and the number of the first and second groups,
the pixel structure comprises a substrate, a plurality of pixels and a plurality of signal lines, wherein the plurality of pixels are arranged on the substrate, each pixel comprises at least one pixel electrode and a public electrode surrounding the periphery of the pixel electrode, the public electrodes and the pixel electrodes are insulated from each other, the pixel electrodes are electrically connected with the signal lines of the pixel electrodes, and the public electrodes are electrically connected with the signal lines of the public electrodes.
Optionally, each pixel is in a hexagonal structure, or in a structure in which at least two hexagons are connected and arranged in a two-dimensional plane, each pixel electrode is located at the center of the corresponding hexagon and is distributed in a strip shape, and each common electrode is located on six sides of the corresponding hexagon.
Optionally, when the pixels include a plurality of pixel electrodes, all the pixel electrodes are arranged in an array, the pixel electrodes in the array are arranged in parallel, and the pixel electrodes in two adjacent rows and two adjacent columns are staggered with each other.
Optionally, when the pixel includes a plurality of common electrodes, the common electrodes are independent or connected to each other.
Optionally, at least a part of the common electrode is shared by two adjacent pixels.
Optionally, a liquid crystal layer is filled between the pixel electrode and the common electrode, the height of the pixel electrode is smaller than that of the liquid crystal layer, the height of the common electrode is smaller than or equal to that of the liquid crystal layer, and the height of the common electrode is higher than that of the pixel electrode.
Optionally, the liquid crystal on silicon device further includes an insulating barrier layer, a reflective layer, an insulating passivation layer, and an alignment layer; the insulating barrier layer includes a portion for achieving insulation between the pixel electrode and the common electrode, a portion for achieving insulation between the reflective layer and the pixel electrode and the common electrode, and a portion for achieving insulation between two adjacent pixels; the reflecting layer is formed on the substrate and exposes a part of the surface of the insulating barrier layer; the insulation passivation layer and the alignment layer are sequentially covered on the insulation barrier layer and the reflection layer.
The invention also provides a manufacturing method of the silicon-based liquid crystal device, which comprises the following steps:
providing a substrate, wherein the substrate is provided with a pixel electrode signal line and a common electrode signal line which are insulated from each other; and the number of the first and second groups,
forming a plurality of pixels arranged on the substrate, wherein each pixel comprises at least one pixel electrode and a public electrode surrounding the periphery of the pixel electrode, the public electrode and the pixel electrode are mutually insulated, the pixel electrode is electrically connected with the pixel electrode signal line, and the public electrode is electrically connected with the public electrode signal line.
Optionally, the method for manufacturing a liquid crystal on silicon device further includes forming an insulating barrier layer on the substrate, forming a reflective layer on the substrate, and sequentially covering the insulating passivation layer and the alignment layer on the insulating barrier layer and the reflective layer; wherein the insulating barrier layer includes a portion for achieving insulation between the pixel electrode and the common electrode, a portion for achieving insulation between the reflective layer and the pixel electrode and the common electrode, and a portion for achieving insulation between two adjacent pixels; the reflective layer exposes a portion of a surface of the insulating barrier layer.
The invention also provides a silicon-based liquid crystal display panel which comprises the silicon-based liquid crystal device provided by the invention, and further comprises a liquid crystal layer and a transparent cover plate, wherein the silicon-based liquid crystal device and the transparent cover plate are bonded together through a frame adhesive, and the liquid crystal layer is clamped between the silicon-based liquid crystal device and the transparent cover plate.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. the liquid crystal on silicon device comprises a plurality of pixels arranged on a substrate, wherein each pixel comprises at least one pixel electrode and a public electrode surrounding the periphery of the pixel electrode, the public electrode and the pixel electrode are mutually insulated, the pixel electrode is electrically connected with a pixel electrode signal line in the substrate, the public electrode is electrically connected with a public electrode signal line in the substrate, and the pixel electrode signal line and the public electrode signal line are mutually insulated, so that liquid crystal can rotate in the horizontal direction under the action of an electric field, the contrast of a liquid crystal on silicon display panel is improved, and the driving voltage is reduced.
2. The manufacturing method of the liquid crystal on silicon device comprises the steps that a plurality of pixels are formed and arranged on a substrate, each pixel comprises at least one pixel electrode and a public electrode surrounding the pixel electrode in a circle, the public electrode and the pixel electrode are mutually insulated, the pixel electrode is electrically connected with a pixel electrode signal line in the substrate, the public electrode is electrically connected with a public electrode signal line in the substrate, and the pixel electrode signal line and the public electrode signal line are mutually insulated, so that liquid crystal can rotate in the horizontal direction under the action of an electric field, and further the contrast of a liquid crystal on silicon display panel is improved and the driving voltage is reduced.
3. According to the silicon-based liquid crystal display panel, due to the fact that the silicon-based liquid crystal device is included, the contrast ratio of the silicon-based liquid crystal display panel is improved, and the driving voltage is reduced.
Drawings
FIGS. 1 a-1 b are schematic diagrams of a top view structure and a cross-sectional structure of an IPS device;
FIGS. 2 a-2 b are schematic diagrams of top view and cross-sectional structures of FFS and ADS devices;
FIGS. 3 a-3 d are schematic top views of LCOS devices according to embodiments of the present invention;
FIG. 4 is a schematic left side view of the liquid crystal on silicon device shown in FIG. 3 b;
FIG. 5 is a schematic diagram of a front view of the LCOS device shown in FIG. 3 b;
FIGS. 6 a-6 b are schematic structural diagrams of an LCOS display panel according to an embodiment of the present invention when not powered;
FIGS. 7 a-7 b are schematic structural diagrams of an LCOS display panel according to an embodiment of the present invention when powered on;
FIG. 8 is a flow chart of a method of fabricating a liquid crystal on silicon device in accordance with an embodiment of the present invention;
fig. 9a to 9g are schematic device views in the method of manufacturing the liquid crystal on silicon device shown in fig. 8.
Wherein the reference numerals of the accompanying figures 1 to 9g are as follows:
11-a gate; 12-a pixel electrode; 13-a common electrode; 21-a grid; 22-pixel electrodes; 23-a common electrode; 30-a substrate; 301-pixel electrode signal lines; 302-common electrode signal line; 303 — a first insulating layer; 304-a second insulating layer; 311. 312, 313-pixel electrodes; 321. 322, 323-common electrode; 33-a first conductive plug; 331-a first via; 34-a second conductive plug; 341-second via; 35-an insulating barrier layer; 36-a reflective layer; 40-a substrate; 41-pixel electrode; 42-a common electrode; 43-liquid crystal; 44-transparent cover plate.
Detailed Description
To make the objects, advantages and features of the present invention more apparent, the following detailed description of the liquid crystal on silicon device, the method for fabricating the same and the liquid crystal on silicon display panel according to the present invention is provided with reference to fig. 3a to 9 g. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
An embodiment of the present invention provides a liquid crystal on silicon device, which includes a substrate and a plurality of pixels, wherein the substrate has a pixel electrode signal line and a common electrode signal line, and the pixel electrode signal line and the common electrode signal line are insulated from each other; the plurality of pixels are arranged on the substrate, each pixel comprises at least one pixel electrode and a public electrode surrounding the periphery of the pixel electrode, the public electrode and the pixel electrode are mutually insulated, the pixel electrode is electrically connected with the pixel electrode signal line, and the public electrode is electrically connected with the public electrode signal line.
Fig. 3a to 3d are schematic top views of the lcos device according to an embodiment of the present invention, fig. 4 is a schematic left view of the lcos device shown in fig. 3b, fig. 5 is a schematic front view of the lcos device shown in fig. 3b, fig. 6a to 6b are schematic structural diagrams of the lcos panel according to an embodiment of the present invention when the lcos panel is not powered on, and fig. 7a to 7b are schematic structural diagrams of the lcos panel according to an embodiment of the present invention when the lcos panel is powered on.
The substrate has a pixel electrode signal line and a common electrode signal line insulated from each other, and the pixel electrode signal line and the common electrode signal line may be located in different insulating layers in the substrate to be insulated from each other. As shown in fig. 4 and 5, the substrate 30 has a first insulating layer 303 and a second insulating layer 304 therein, the first insulating layer 303 is located on the top of the substrate 30, the second insulating layer 304 is located below the first insulating layer 303, the pixel electrode signal line 301 is located on the bottom of the first insulating layer 303, and the common electrode signal line 302 is located on the bottom of the second insulating layer 304, so that the pixel electrode signal line 301 and the common electrode signal line 302 are insulated from each other.
The substrate may be made of any suitable substrate known to those skilled in the art, and may further include other circuits and MOS transistors.
The plurality of pixels are arranged on the substrate, each pixel comprises at least one pixel electrode and a public electrode surrounding the periphery of the pixel electrode, the public electrode and the pixel electrode are mutually insulated, the pixel electrode is electrically connected with the pixel electrode signal line, and the public electrode is electrically connected with the public electrode signal line. The pixel electrode and the common electrode are formed by adopting different electrode layers so as to enable the common electrode and the pixel electrode to be mutually insulated; the horizontal distance between the pixel electrode and the common electrode is not limited, but the closer the horizontal distance between the pixel electrode and the common electrode is, the lower the driving voltage is. The pixel electrode can be connected with a pixel signal line in the substrate through an electrode switch; the common electrodes may be connected to a common electrode signal line in the substrate after being connected to each other, or the common electrodes may be independent of each other and connected to a common electrode signal line in the substrate, respectively.
Each pixel can be in a hexagonal structure or in a structure formed by connecting at least two hexagons in a two-dimensional plane, the hexagons can be regular hexagons or non-regular hexagons, each pixel electrode is located in the center of the corresponding hexagon and distributed in a strip shape, and each common electrode is located on six sides of the corresponding hexagon. When the pixel comprises a plurality of pixel electrodes, all the pixel electrodes are arranged in an array, the pixel electrodes in the array are arranged in parallel, and the pixel electrodes in two adjacent rows and two adjacent columns are staggered with each other; when the pixel comprises a plurality of common electrodes, the common electrodes are mutually independent or mutually connected, and the mutually independent common electrodes are separated by an insulating material. For example, referring to fig. 3a to 3c, fig. 3a to 3c are schematic top views of a hexagonal structure, a structure in which two hexagons are connected and a structure in which three hexagons are connected, respectively, for each pixel. As shown in fig. 3a, the pixel has a hexagonal structure, the pixel includes a strip-shaped pixel electrode 311 and a hexagonal common electrode 321 surrounding the pixel electrode 311, two ends of the pixel electrode 311 respectively face two opposite corners of the hexagon, and the hexagon is symmetrical with the pixel electrode 311, so that the pixel electrode 311 is located at the center of the common electrode 321, and the pixel electrode 311 and the common electrode 321 are insulated from each other. As shown in fig. 3b, the pixel has a structure in which two hexagons are connected in a two-dimensional plane, the pixel includes two strip-shaped pixel electrodes 312 and a hexagonal common electrode 322 surrounding each pixel electrode 312, the two pixel electrodes 312 are parallel to each other, and the two common electrodes 322 are connected to each other, i.e. share one side of the hexagonal common electrode 322. As shown in fig. 3c, the pixel has a structure in which three hexagons are connected in a two-dimensional plane, the pixel includes three strip-shaped pixel electrodes 313 and a hexagonal common electrode 323 surrounding each pixel electrode 313, the three pixel electrodes 313 are parallel to each other, and two adjacent common electrodes 323 are connected to each other, that is, two adjacent common electrodes 323 share one side of the hexagonal common electrode 323.
In addition, at least a part of the common electrode may be shared by two adjacent pixels. For example, referring to fig. 3d, fig. 3d includes six interconnected pixels, each of which is a structure shown in fig. 3b and in which two hexagons are arranged in a two-dimensional plane in a connected manner, and two adjacent pixels are filled with different patterns in order to distinguish different pixels. As can be seen from fig. 3d, the six pixels are arranged in two rows, each row includes three pixels, all the pixel electrodes 312 are arranged in an array, all the pixel electrodes 312 are parallel to each other, the pixel electrodes 312 in two adjacent rows and two adjacent columns are arranged in a staggered manner, and the adjacent two pixels are connected to each other, i.e., share one or two sides of the hexagonal common electrode 322.
Moreover, compared with pixels with a quadrilateral structure or pixels with a structure that at least two quadrilaterals are connected and arranged in a two-dimensional plane, the pixels with a hexagonal structure or the pixels with a structure that at least two hexagons are connected and arranged in a two-dimensional plane can effectively avoid the problems of weak electric field intensity at four corners of a quadrilateral electrode and low brightness at the four corners caused by large difference between the electric field direction and a central region, thereby improving the overall liquid crystal lighting effect of the pixels.
The pixel electrode and the public electrode surrounding the pixel electrode in a circle can be matched with each other on the substrate like a wall body to form a wall space, and liquid crystal is filled in the space. As shown in fig. 4 and 5, the pixel electrode 312 and the common electrode 322 on the substrate 30 each have a certain height. In the liquid crystal on silicon display panel, since the liquid crystal layer is filled in the box composed of the liquid crystal on silicon device, the sealant and the transparent cover plate, the liquid crystal layer is also filled between the pixel electrode and the common electrode and between the adjacent common electrodes, at this time, the heights of the pixel electrode and the common electrode are not limited, and only the height of the pixel electrode is less than the height of the liquid crystal layer (that is, the top surface of the pixel electrode is lower than the bottom surface of the transparent cover plate), and the height of the common electrode is less than or equal to the height of the liquid crystal layer (that is, the top surface of the common electrode is lower than or equal to the bottom surface of the transparent cover plate). Preferably, the height of the pixel electrode and the height of the common electrode are both half of the height of the liquid crystal layer, so that the liquid crystal in the box can rotate smoothly and simultaneously has high pixel capacitance. Also, it is preferable that the height of the common electrode is higher than that of the pixel electrode (as shown in fig. 4 and 5) to shield the electric field of the pixel electrode. For example, the height of the pixel electrode may be 0.1 to 0.5 μm, preferably 0.2 μm; the height of the common electrode may be 0.1 to 0.8 μm, preferably 0.4 μm. The thicknesses of the pixel electrode and the common electrode are not limited, and the thinner the thickness is, the better the thickness is, for example, the thickness may be 0.2 μm.
As can be seen from the above description of the structures of the pixel electrode and the common electrode, each pixel includes at least one pixel electrode and a common electrode surrounding the pixel electrode, the pixel electrode and the common electrode are vertically erected on the substrate as a wall, and the thinner the thickness is, the better the thickness is, so that the area occupied by the pixel electrode and the common electrode on the substrate is small, and thus the liquid crystal on silicon device is very suitable for a small-sized pixel, and the performance of the liquid crystal on silicon device is improved. Referring to fig. 6a to 7b, the liquid crystal 43 is filled between the substrate 40 and the transparent cover 44, and a part of the liquid crystal 43 is located in the wall space formed by the common electrode 42 and the pixel electrode 41. As can be seen from fig. 6a (front view schematic diagram) and fig. 6b (top view schematic diagram), when the pixel electrode 41 is not energized, the liquid crystal 43 can be aligned in parallel with the pixel electrode 41 in the space, and the polarization state of the incident and reflected light is not changed at all, so that the dark state appears darker; as can be seen from fig. 7a (front view schematic diagram) and fig. 7b (top view schematic diagram), when the pixel electrode 41 is powered on, an electric field is formed in the space formed by the pixel electrode 41 and the common electrode 42, the liquid crystal 43 rotates in the horizontal direction under the action of the electric field force, and the polarization direction of the incident and reflected light also rotates, so that the horizontal deflection electric field is stronger, and further, the contrast ratio is improved, the driving voltage is reduced, and the power consumption is lower. For example, when the distance between adjacent pixels is 1 μm, the maximum brightness of the LCOS display panel can be achieved when the driving voltage is 3V; the panel in the ADS mode can reach the maximum brightness only under the driving voltage of 5.5V, and the driving voltage of the TN panel also needs to reach 5V to 6V on the premise of ensuring higher contrast.
In addition, as shown in fig. 4 and 5, the pixel electrode 312 and the pixel electrode signal line 301 are electrically connected through the first conductive plug 33, and the common electrode 322 and the common electrode signal line 302 are electrically connected through the second conductive plug 34.
In addition, as shown in fig. 4 and 5, the liquid crystal on silicon device further includes an insulating barrier layer 35, a reflective layer 36, an insulating passivation layer (not shown), and an alignment layer (not shown). The insulating barrier layer 35 includes a portion for achieving insulation between the pixel electrode 312 and the common electrode 322, a portion for achieving insulation between the reflective layer 36 and the pixel electrode 312 and the common electrode 322, and a portion for achieving insulation between two adjacent pixels; the reflective layer 36 is formed on the substrate 30 and exposes a portion of the surface of the insulating barrier layer 35; the insulating passivation layer and the alignment layer sequentially cover the insulating barrier layer 35 and the reflective layer 36. Of course, a dielectric layer (not shown) may also be formed between the reflective layer 36 and the substrate 30.
In summary, the liquid crystal on silicon device provided by the present invention comprises: a substrate having a pixel electrode signal line and a common electrode signal line insulated from each other; and the plurality of pixels are arranged on the substrate, each pixel comprises at least one pixel electrode and a public electrode surrounding the periphery of the pixel electrode, the public electrode and the pixel electrode are mutually insulated, the pixel electrode is electrically connected with the pixel electrode signal line, and the public electrode is electrically connected with the public electrode signal line. The liquid crystal device can enable the liquid crystal to rotate horizontally under the action of an electric field, so that the contrast of the liquid crystal display panel is improved, and the driving voltage is reduced.
An embodiment of the present invention provides a method for manufacturing a liquid crystal on silicon device, and referring to fig. 8, fig. 8 is a flowchart of a method for manufacturing a liquid crystal on silicon device according to an embodiment of the present invention, where the method for manufacturing a liquid crystal on silicon device includes:
step S1, providing a substrate, wherein the substrate is provided with a pixel electrode signal line and a common electrode signal line which are insulated from each other;
step S2, forming a plurality of pixels arranged on the substrate, each of the pixels including at least one pixel electrode and a common electrode surrounding the pixel electrode, the common electrode and the pixel electrode being insulated from each other, the pixel electrode being electrically connected to the pixel electrode signal line, and the common electrode being electrically connected to the common electrode signal line.
The method for manufacturing the liquid crystal on silicon device provided in this embodiment will be described in more detail below.
According to step S1, a substrate having a pixel electrode signal line and a common electrode signal line therein is provided, the pixel electrode signal line and the common electrode signal line being insulated from each other. The pixel electrode signal line and the common electrode signal line may be located in different insulating layers in the substrate to be insulated from each other. As shown in fig. 9a, the substrate 30 has a first insulating layer 303 and a second insulating layer 304 therein, the first insulating layer 303 is located on the top of the substrate 30, the second insulating layer 304 is located below the first insulating layer 303, the pixel electrode signal line 301 is located on the bottom of the first insulating layer 303, and the common electrode signal line 302 is located on the bottom of the second insulating layer 304, so that the pixel electrode signal line 301 and the common electrode signal line 302 are insulated from each other.
The substrate may be made of any suitable substrate known to those skilled in the art, and may further include other circuits and MOS transistors.
According to step S2, a plurality of pixels are formed and arranged on the substrate, each of the pixels includes at least one pixel electrode and a common electrode surrounding the pixel electrode, the common electrode and the pixel electrode are insulated from each other, the pixel electrode is electrically connected to the pixel electrode signal line, and the common electrode is electrically connected to the common electrode signal line. The horizontal distance between the pixel electrode and the common electrode is not limited, but the closer the horizontal distance between the pixel electrode and the common electrode is, the lower the driving voltage is. The pixel electrode may be connected to a pixel signal line in the substrate through an electrode switch; the common electrodes may be connected to a common electrode signal line in the substrate after being connected to each other, or the common electrodes may be independent of each other and connected to a common electrode signal line in the substrate, respectively.
Each pixel can be in a hexagonal structure or in a structure formed by connecting at least two hexagons in a two-dimensional plane, the hexagons can be regular hexagons or non-regular hexagons, each pixel electrode is located in the center of the corresponding hexagon and distributed in a strip shape, and each common electrode is located on six sides of the corresponding hexagon. When the pixel comprises a plurality of pixel electrodes, all the pixel electrodes are arranged in an array, the pixel electrodes in the array are arranged in parallel, and the pixel electrodes in two adjacent rows and two adjacent columns are staggered with each other; when the pixel comprises a plurality of common electrodes, the common electrodes are mutually independent or mutually connected, and the mutually independent common electrodes are separated by an insulating material. In addition, at least part of the common electrode may be shared by two adjacent pixels, i.e. two adjacent pixels share at least one side of the hexagonal common electrode. For specific examples, refer to the above description of fig. 3a to 3d, which are not repeated herein.
Moreover, compared with pixels with a quadrilateral structure or pixels with a structure that at least two quadrilaterals are connected and arranged in a two-dimensional plane, the pixels with a hexagonal structure or the pixels with a structure that at least two hexagons are connected and arranged in a two-dimensional plane can effectively avoid the problems of weak electric field intensity at four corners of a quadrilateral electrode and low brightness at the four corners caused by large difference between the electric field direction and a central region, thereby improving the overall liquid crystal lighting effect of the pixels.
The pixel electrode and the public electrode surrounding the pixel electrode in the periphery can be matched with each other on the substrate like a wall body to form a wall space, and liquid crystal is filled in the space. In the liquid crystal on silicon display panel, the liquid crystal layer is filled in a box composed of the liquid crystal on silicon device, the sealant and the transparent cover plate, and then the liquid crystal layer is filled between the pixel electrode and the common electrode and between the adjacent common electrodes, at this time, the heights of the pixel electrode and the common electrode are not limited, and only the height of the pixel electrode is less than the height of the liquid crystal layer (that is, the top surface of the pixel electrode is lower than the bottom surface of the transparent cover plate), and the height of the common electrode is less than or equal to the height of the liquid crystal layer (that is, the top surface of the common electrode is lower than or equal to the bottom surface of the transparent cover plate). Preferably, the height of the pixel electrode and the height of the common electrode are both half of the height of the liquid crystal layer, so that the liquid crystal in the box can rotate smoothly and simultaneously has high pixel capacitance. And, it is preferable that the height of the common electrode is higher than that of the pixel electrode to achieve the effect of shielding the electric field of the pixel electrode. For example, the height of the pixel electrode may be 0.1 to 0.5 μm, preferably 0.2 μm; the height of the common electrode may be 0.1 to 0.8 μm, preferably 0.4 μm. The thicknesses of the pixel electrode and the common electrode are not limited, and the thinner the thickness is, the better the thickness is, for example, the thickness may be 0.2 μm.
As can be seen from the introduction of the structures of the pixel electrode and the common electrode in the formed pixels, each pixel includes at least one pixel electrode and a common electrode surrounding the pixel electrode, the pixel electrode and the common electrode are vertically erected on the substrate like a wall, and the thicknesses of the pixel electrode and the common electrode are as thin as possible, so that the occupied area of the pixel electrode and the common electrode on the substrate is small, the pixel electrode and the common electrode are very suitable for a liquid crystal on silicon device with small-sized pixels, and the performance of the liquid crystal on silicon device is improved. Referring to fig. 6a to 7b, the liquid crystal 43 is filled between the substrate 40 and the transparent cover 44, and a part of the liquid crystal 43 is located in the wall space formed by the common electrode 42 and the pixel electrode 41. As can be seen from fig. 6a (front view schematic diagram) and fig. 6b (top view schematic diagram), when the pixel electrode 41 is not energized, the liquid crystal 43 can be aligned in parallel with the pixel electrode 41 in the space, and the polarization state of the incident and reflected light is not changed at all, so that the dark state appears darker; as can be seen from fig. 7a (front view schematic diagram) and fig. 7b (top view schematic diagram), when the pixel electrode 41 is powered on, an electric field is formed in the space formed by the pixel electrode 41 and the common electrode 42, the liquid crystal 43 rotates in the horizontal direction under the action of the electric field force, and the polarization direction of the incident and reflected light also rotates, so that the horizontal deflection electric field is stronger, and further, the contrast ratio is improved, the driving voltage is reduced, and the power consumption is lower. For example, when the distance between adjacent pixels is 1 μm, the maximum brightness of the LCOS display panel can be achieved when the driving voltage is 3V; the panel in the ADS mode can reach the maximum brightness only under the driving voltage of 5.5V, and the driving voltage of the TN panel also needs to reach 5V to 6V on the premise of ensuring higher contrast.
In addition, the steps of forming the pixel electrode and the common electrode are described with reference to fig. 9a to 9g, fig. 9a to 9g are also schematic device diagrams in the step of forming the liquid crystal on silicon device shown in fig. 5, and the steps of forming the pixel electrode 312 and the common electrode 322 may include: first, as shown in fig. 9b, an insulating barrier layer 35 is covered on the substrate 30; then, as shown in fig. 9c, the insulating barrier layer 35 and the first insulating layer 303 over the pixel electrode signal line 301 are etched to form a first via 331 exposing a portion of the top surface of the pixel electrode signal line 301, and the insulating barrier layer 35, the first insulating layer 303 and the second insulating layer 304 over the common electrode signal line 302 are etched to form a second via 341 exposing a portion of the top surface of the common electrode signal line 302; next, as shown in fig. 9d, depositing a conductive material into the first via 331 and the second via 341 to form a first conductive plug 33 in the first via 331 and electrically connected to the pixel electrode signal line 301, and a second conductive plug 34 in the second via 341 and electrically connected to the common electrode signal line 302; next, as shown in fig. 9e, by etching the insulating barrier layer 35 to form an opening (not shown) in the insulating barrier layer 35 to expose a portion of the top surface of the substrate 30, and filling a reflective material into the opening to form a reflective layer 36 in the opening, the reflective layer 36 being insulated from the first and second conductive plugs 33 and 34 by the insulating barrier layer 35; next, as shown in fig. 9f and 9g, a pixel electrode 312 and a common electrode 322 are sequentially formed on the substrate 30, or a common electrode 322 may be formed first and then the pixel electrode 312 is formed on the substrate 30, the bottom of the pixel electrode 312 is electrically connected to the first conductive plug 33, the bottom of the common electrode 322 is electrically connected to the second conductive plug 34, the common electrode 322 surrounds the pixel electrode 312, the reflective layer 36 is respectively insulated from the pixel electrode 312 and the common electrode 322 by the insulating barrier layer 35, and the pixel electrode 312 and the common electrode 322 are also insulated by the insulating barrier layer 35. As can be seen from the above steps of forming the pixel electrode 312 and the common electrode 322, the pixel electrode 312 and the pixel electrode signal line 301 are electrically connected through the first conductive plug 33, and the common electrode 322 and the common electrode signal line 302 are electrically connected through the second conductive plug 34.
In addition, two adjacent pixels can also be insulated by the insulating barrier layer 35; the insulating barrier layer 35 and the reflective layer 36 may further be covered with an insulating passivation layer (not shown) and an alignment layer (not shown) in sequence. Of course, a dielectric layer (not shown) may also be formed between the reflective layer 36 and the substrate 30.
In summary, the method for manufacturing a liquid crystal on silicon device provided by the present invention includes: providing a substrate, wherein the substrate is provided with a pixel electrode signal line and a common electrode signal line which are insulated from each other; and forming a plurality of pixels arranged on the substrate, wherein each pixel comprises at least one pixel electrode and a public electrode surrounding the pixel electrode in a circle, the public electrode and the pixel electrode are insulated from each other, the pixel electrode is electrically connected with the pixel electrode signal line, and the public electrode is electrically connected with the public electrode signal line. The manufacturing method of the liquid crystal on silicon device enables the liquid crystal to rotate horizontally under the action of the electric field, so that the contrast of the liquid crystal on silicon display panel is improved, and the driving voltage is reduced.
An embodiment of the present invention provides a liquid crystal on silicon display panel, which includes the liquid crystal on silicon device provided by the present invention, and further includes a liquid crystal layer and a transparent cover plate, wherein the liquid crystal on silicon device and the transparent cover plate are bonded together by a frame adhesive, and the liquid crystal layer is clamped between the liquid crystal on silicon device and the transparent cover plate.
The liquid crystal layer is provided with liquid crystal molecules and is aligned through an alignment layer in the silicon-based liquid crystal device. The material of the transparent cover plate can comprise light-transmitting materials such as glass, silicon oxide, plastic and the like. The frame glue can not only adhere the silicon-based liquid crystal device and the transparent cover plate together, but also resist the influence of external mirrors such as water vapor and the like. The frame glue can be made of UV glue or glass glue.
Because the silicon-based liquid crystal display panel comprises the silicon-based liquid crystal device provided by the invention, part of the liquid crystal layer is positioned in a wall space formed by the common electrode and the pixel electrode in the silicon-based liquid crystal device, when the pixel electrode is not electrified, the liquid crystal can be arranged in parallel to the pixel electrode in the space, and the polarization state of incident and reflected light is not changed, so that the dark state is darker; when the pixel electrode is electrified, an electric field is formed in a space formed by the pixel electrode and the common electrode, the liquid crystal rotates in the horizontal direction under the action of the electric field force, and the polarization direction of incident and reflected light also rotates along with the rotation of the liquid crystal, so that the horizontal deflection electric field is stronger, the contrast is improved, the driving voltage is reduced, and the power consumption is lower. For example, when the distance between adjacent pixels is 1 μm, the maximum brightness of the LCOS display panel can be achieved when the driving voltage is 3V; the panel in the ADS mode can reach the maximum brightness only under the driving voltage of 5.5V, and the driving voltage of the TN panel also needs to reach 5V to 6V on the premise of ensuring higher contrast. Therefore, the contrast of the liquid crystal on silicon display panel is improved, the driving voltage is reduced, the power consumption is lower, and the competitiveness of the product is improved.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (9)
1. A liquid crystal on silicon device, comprising:
a substrate having a pixel electrode signal line and a common electrode signal line insulated from each other; and the number of the first and second groups,
the pixel structure comprises a substrate, a plurality of pixels and a plurality of signal lines, wherein the plurality of pixels are arranged on the substrate, each pixel comprises at least one pixel electrode and a common electrode surrounding the pixel electrode in a circle, the common electrode and the pixel electrode are mutually insulated, the pixel electrode is electrically connected with a pixel electrode signal line, and the common electrode is electrically connected with the common electrode signal line; each pixel is of a hexagonal structure or a structure formed by connecting and arranging at least two hexagons in a two-dimensional plane, each pixel electrode is positioned at the center of the corresponding hexagon and is distributed in a strip shape, each common electrode is positioned on six sides of the corresponding hexagon, and the hexagons are regular hexagons.
2. The liquid crystal on silicon device according to claim 1, wherein when the pixel comprises a plurality of pixel electrodes, all of the pixel electrodes are arranged in an array, and the pixel electrodes in the array are arranged in parallel, and the pixel electrodes in two adjacent rows and two adjacent columns are all staggered with respect to each other.
3. The liquid crystal on silicon device according to claim 1, wherein when a plurality of common electrodes are included in the pixels, the respective common electrodes are independent of each other or connected to each other.
4. A liquid crystal on silicon device according to claim 1 wherein at least a portion of the common electrode is shared by two adjacent pixels.
5. The liquid crystal on silicon device of claim 1, wherein a liquid crystal layer is filled between the pixel electrode and the common electrode, a height of the pixel electrode is less than a height of the liquid crystal layer, a height of the common electrode is less than or equal to the height of the liquid crystal layer, and the height of the common electrode is higher than the pixel electrode.
6. The liquid crystal on silicon device of claim 1, further comprising an insulating barrier layer, a reflective layer, an insulating passivation layer, and an alignment layer; the insulating barrier layer includes a portion for achieving insulation between the pixel electrode and the common electrode, a portion for achieving insulation between the reflective layer and the pixel electrode and the common electrode, and a portion for achieving insulation between two adjacent pixels; the reflecting layer is formed on the substrate and exposes a part of the surface of the insulating barrier layer; the insulation passivation layer and the alignment layer are sequentially covered on the insulation barrier layer and the reflection layer.
7. A method for manufacturing a liquid crystal on silicon device as recited in any one of claims 1 to 6, comprising:
providing a substrate, wherein the substrate is provided with a pixel electrode signal line and a common electrode signal line which are insulated from each other; and the number of the first and second groups,
forming a plurality of pixels arranged on the substrate, wherein each pixel comprises at least one pixel electrode and a public electrode surrounding the periphery of the pixel electrode, the public electrode and the pixel electrode are mutually insulated, the pixel electrode is electrically connected with the pixel electrode signal line, and the public electrode is electrically connected with the public electrode signal line.
8. The method of claim 7, further comprising forming an insulating barrier layer on the substrate, forming a reflective layer on the substrate, and sequentially covering an insulating passivation layer and an alignment layer on the insulating barrier layer and the reflective layer; wherein the insulating barrier layer includes a portion for achieving insulation between the pixel electrode and the common electrode, a portion for achieving insulation between the reflective layer and the pixel electrode and the common electrode, and a portion for achieving insulation between two adjacent pixels; the reflective layer exposes a portion of a surface of the insulating barrier layer.
9. A liquid crystal on silicon display panel comprising the liquid crystal on silicon device as claimed in any one of claims 1 to 6, further comprising a liquid crystal layer and a transparent cover plate, wherein the liquid crystal on silicon device and the transparent cover plate are bonded together by a frame adhesive, and the liquid crystal layer is sandwiched between the liquid crystal on silicon device and the transparent cover plate.
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