CN110977133A - A kind of diffusion welding method of ultra-high purity copper target - Google Patents
A kind of diffusion welding method of ultra-high purity copper target Download PDFInfo
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- CN110977133A CN110977133A CN201911358716.8A CN201911358716A CN110977133A CN 110977133 A CN110977133 A CN 110977133A CN 201911358716 A CN201911358716 A CN 201911358716A CN 110977133 A CN110977133 A CN 110977133A
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- 238000003466 welding Methods 0.000 title claims abstract description 91
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 87
- 239000010949 copper Substances 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000009792 diffusion process Methods 0.000 title claims abstract description 13
- 239000013077 target material Substances 0.000 claims abstract description 45
- 238000001513 hot isostatic pressing Methods 0.000 claims abstract description 36
- 238000001035 drying Methods 0.000 claims description 30
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 24
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 16
- 238000001291 vacuum drying Methods 0.000 claims description 16
- 238000004381 surface treatment Methods 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 239000010935 stainless steel Substances 0.000 claims description 10
- 229910001220 stainless steel Inorganic materials 0.000 claims description 10
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 229910002535 CuZn Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 12
- 238000001816 cooling Methods 0.000 abstract description 7
- 230000002159 abnormal effect Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 229910000831 Steel Inorganic materials 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- 239000010963 304 stainless steel Substances 0.000 description 3
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/14—Preventing or minimising gas access, or using protective gases or vacuum during welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/26—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/12—Copper or alloys thereof
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The invention relates to a diffusion welding method of an ultra-high pure copper target material, which comprises the following steps: (1) placing the assembled ultrahigh pure copper target material and the threaded back plate into a sheath, arranging a cushion block between the ultrahigh pure copper target material and the sheath cover plate, and then welding and vacuumizing the sheath; (2) and carrying out hot isostatic pressing treatment on the vacuumized sheath, cooling and removing the sheath to finish welding. According to the invention, the cushion block is added above the ultrahigh pure copper target material to eliminate the stress concentration area at the edge of the ultrahigh pure copper target material during sheath assembly, so that abnormal growth of crystal grains at the edge of the ultrahigh pure copper target material is inhibited in the welding process, and the growth of the crystal grains is inhibited while the welding strength is ensured only by reducing the temperature and eliminating the stress concentration area.
Description
Technical Field
The invention relates to the field of target welding, in particular to a diffusion welding method of an ultra-high pure copper target.
Background
At present, with the rapid development of the very large scale integrated circuit, the size of the chip for the semiconductor has been reduced to the nanometer level, the RC delay and the electromigration of the metal interconnection line become the main factors influencing the performance of the chip, and the traditional aluminum and aluminum alloy interconnection line can not meet the requirements of the process of the very large scale integrated circuit. Compared with aluminum, copper has higher electromigration resistance and higher conductivity, especially ultra-high-purity copper (the purity is more than or equal to 6N), and has important significance for reducing the resistance of a chip interconnection line and improving the operation speed of the chip interconnection line.
Ultra-high purity copper targets are commonly used as materials for manufacturing wires in semiconductor chip manufacturing due to their excellent electrical conductivity, and need to be welded with another copper alloy backing plate material with relatively high strength due to their low hardness (60HV-65HV) on one hand and relatively high cost on the other hand. The ultra-high purity copper has a very high tendency to grow crystalline grains at high temperature and high pressure, which adversely affects the line width and uniformity of the wafer. High pressure is a sufficient condition for ensuring welding quality, so that ultra-high pure copper target (Blank) and copper alloy Backing Plate (BP) need to be welded at low temperature and high pressure. In order to realize excellent welding of the ultra-high pure copper target and the copper alloy back plate at low temperature, hot isostatic pressing diffusion welding with relatively mature technology is adopted at present. For example, CN101648303A discloses a method for welding a target and a backing plate, which utilizes hot isostatic pressing diffusion welding to improve the problem that the welding workpiece and the brazing filler metal are difficult to infiltrate, effectively improves the bonding strength between the copper target and the backing plate, and enables the copper target not to separate during sputtering and to perform sputtering coating normally. CN101648320A discloses a method for welding a target and a back plate, which realizes hot-press welding of the target and the back plate under vacuum condition by adopting a vacuum sleeve bag, effectively prevents the welding surface of metal from being oxidized, and reduces the cost of vacuum equipment; on the other hand, a larger positive pressure is provided, and the bonding strength between the copper target material and the back plate is further improved.
In order to ensure the assembly precision and welding strength of the ultra-high pure copper and the copper alloy back plate, aluminum alloy is usually selected as a sheathing material. Because the ultrahigh pure copper target and the copper alloy back plate inevitably expand with heat and contract with cold in the HIP process, an assembly gap (usually 0.15mm-0.3mm) is required to be reserved before welding, and if the assembly gap is too large, the product is scrapped due to the fact that subsequent processing cannot be carried out; and if the assembly clearance is too small or the interference fit is adopted, the crystal grains at the outer edge of the ultra-high pure copper target material in the HIP welding process grow abnormally (coarsen) due to too large stress. In the HIP process of the ultrahigh pure copper target and the copper alloy back plate, stress concentration is formed at an assembly gap by the sheathing cover plate under the action of pressure, and finally crystal grains on the outer edge of the ultrahigh pure copper target are coarsened.
Disclosure of Invention
In view of the problems in the prior art, the invention aims to provide a diffusion welding method for an ultra-high purity copper target material, which can inhibit abnormal growth of crystal grains at the edge of the ultra-high purity copper target material in the welding process, thereby ensuring the welding strength and inhibiting the growth of the crystal grains only by reducing the temperature and eliminating a stress concentration area.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a diffusion welding method of an ultra-high pure copper target material, which comprises the following steps:
(1) placing the assembled ultrahigh pure copper target material and the threaded back plate into a sheath, arranging a cushion block between the ultrahigh pure copper target material and the sheath cover plate, and then welding and vacuumizing the sheath;
(2) and carrying out hot isostatic pressing treatment on the vacuumized sheath, cooling and removing the sheath to finish welding.
According to the method provided by the invention, the cushion block is added above the ultrahigh pure copper target material to eliminate the stress concentration area at the edge of the ultrahigh pure copper target material during sheath assembly, so that abnormal growth of crystal grains at the edge of the ultrahigh pure copper target material is inhibited in the welding process, the welding strength is ensured, and the growth of the crystal grains is inhibited only by reducing the temperature and eliminating the stress concentration area.
As a preferable technical scheme of the invention, the thread of the back plate in the step (1) is arranged on the welding surface of the back plate.
Preferably, the back plate is provided with a groove matched with the target material, and the depth of the groove is higher than the thickness of the ultra-high pure copper target material.
Preferably, the pitch of the threads in step (1) is 0.15-0.25mm, such as 0.15mm, 0.16mm, 0.17mm, 0.18mm, 0.19mm, 0.2mm, 0.21mm, 0.22mm, 0.23mm, 0.24mm or 0.25mm, but not limited to the recited values, and other values not recited in this range are equally applicable.
Preferably, the thread depth in step (1) is 0.1-0.15mm, such as 0.1mm, 0.105mm, 0.11mm, 0.115mm, 0.12mm, 0.125mm, 0.13mm, 0.135mm, 0.14mm, 0.145mm or 0.15mm, but not limited to the recited values, and other values not recited in this range are equally applicable.
As a preferable technical scheme of the invention, the backboard in the step (1) is a copper alloy backboard.
Preferably, the copper alloy back-sheet comprises a CuZn alloy back-sheet and/or a CuCr alloy back-sheet.
As a preferable technical scheme of the invention, the ultra-high pure copper target material and the back plate with threads in the step (1) are subjected to surface treatment and drying before assembly.
Preferably, the surface treatment of step (1) comprises rust removal and ultrasonic cleaning.
Preferably, the rust removal is removal of thread face rust in the direction of the thread with a wire brush.
Preferably, the ultrasonic cleaning time is 20-30min, such as 20min, 21min, 22min, 23min, 24min, 25min, 26min, 27min, 28min, 29min or 30min, but not limited to the recited values, and other values not recited in the range are also applicable.
In a preferred embodiment of the present invention, the drying is performed by vacuum drying.
Preferably, the degree of vacuum of the vacuum drying is 0.01Pa or less, and may be, for example, 0.01Pa, 0.009Pa, 0.008Pa, 0.007Pa, 0.006Pa, 0.005Pa, 0.004Pa, 0.003Pa, 0.002Pa, or 0.001Pa, but is not limited to the values listed, and other values not listed in the range are also applicable.
Preferably, the drying temperature is 60-80 ℃, for example, 60 ℃, 61 ℃, 62 ℃, 63 ℃, 64 ℃, 65 ℃, 66 ℃, 67 ℃, 68 ℃, 69 ℃, 70 ℃, 71 ℃, 72 ℃, 73 ℃, 74 ℃, 75 ℃, 76 ℃, 77 ℃, 78 ℃, 79 ℃ or 80 ℃, but not limited to the cited values, in this range other values are also applicable.
Preferably, the drying time is 60-80min, for example, 60min, 61min, 62min, 63min, 64min, 65min, 66min, 67min, 68min, 69min, 70min, 71min, 72min, 73min, 74min, 75min, 76min, 77min, 78min, 79min, or 80min, but not limited to the recited values, and other values not recited in this range are also applicable.
As the preferable technical scheme of the invention, the cushion block in the step (1) is made of any one of copper, copper alloy and stainless steel, preferably stainless steel; the stainless steel includes 304 stainless steel and/or 316L stainless steel.
Preferably, the thickness of the pad of step (1) is 7-10mm, such as 7mm, 7.2mm, 7.4mm, 7.6mm, 7.8mm, 8mm, 8.2mm, 8.4mm, 8.6mm, 8.8mm, 9mm, 9.2mm, 9.4mm, 9.6mm, 9.8mm or 10mm, but not limited to the values listed, and other values not listed in this range are equally applicable.
In the invention, the cross section of the cushion block is the same as that of the ultra-high pure copper target, if the target is circular, the cushion block is also circular with the same diameter; and when the target is square, the cushion blocks are also in the same length and width. When the backing plate in the step (1) is made of copper and/or copper alloy, in order to avoid welding the backing plate and the target together, a stainless steel plate which has the same size as the backing plate and the thickness of not more than 0.3mm can be arranged between the backing plate and the target.
As a preferable technical scheme of the invention, the welding mode in the step (1) is argon arc welding.
Preferably, the degree of vacuum of the vacuum in step (1) is less than or equal to 0.01Pa, such as 0.01Pa, 0.009Pa, 0.008Pa, 0.007Pa, 0.006Pa, 0.005Pa, 0.004Pa, 0.003Pa, 0.002Pa, or 0.001Pa, but not limited to the recited values, and other values not recited in the range are also applicable. After the metal sheath is vacuumized and sealed, the time from the hot isostatic pressing treatment is not more than 24 hours, otherwise, the vacuum degree in the metal sheath is reduced, which is not beneficial to the subsequent hot isostatic pressing treatment.
In a preferred embodiment of the present invention, the pressure of the hot isostatic pressing in the step (2) is 95 to 105MPa, and may be, for example, 95MPa, 96MPa, 97MPa, 98MPa, 99MPa, 100MPa, 101MPa, 102MPa, 103MPa, 104MPa or 105MPa, but is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable.
As a preferable embodiment of the present invention, the temperature of the hot isostatic pressing in the step (2) is 250-270 ℃, and for example, it may be 250 ℃, 251 ℃, 252 ℃, 253 ℃, 254 ℃, 255 ℃, 256 ℃, 257 ℃, 258 ℃, 259 ℃, 260 ℃, 261 ℃, 262 ℃, 263 ℃, 264 ℃, 265 ℃, 266 ℃, 267 ℃, 268 ℃, 269 ℃, or 270 ℃, but is not limited to the above-mentioned values, and other values not listed in the above range are also applicable.
Preferably, the hot isostatic pressing treatment in step (2) is performed for 3 to 5 hours, such as 3 hours, 3.1 hours, 3.2 hours, 3.3 hours, 3.4 hours, 3.5 hours, 3.6 hours, 3.7 hours, 3.8 hours, 3.9 hours, 4 hours, 4.1 hours, 4.2 hours, 4.3 hours, 4.4 hours, 4.5 hours, 4.6 hours, 4.7 hours, 4.8 hours, 4.9 hours or 5 hours, etc., but not limited to the enumerated values, and other unrecited values in the range are also applicable.
As a preferable technical scheme of the invention, the welding assembly method comprises the following steps:
(1) placing the assembled ultrahigh pure copper target material and the threaded back plate into a sheath, arranging a cushion block between the ultrahigh pure copper target material and the sheath cover plate, and then welding and vacuumizing the sheath; the thread of the back plate is arranged on the welding surface of the back plate; the back plate is provided with a groove matched with the ultrahigh pure copper target material, and the depth of the groove is higher than the thickness of the ultrahigh pure copper target material; the pitch of the threads is 0.15-0.25 mm; the depth of the thread is 0.1-0.15 mm; the back plate is a copper alloy back plate; the copper alloy backing sheet comprises a CuZn alloy backing sheet and/or a CuCr alloy backing sheet; the ultrahigh pure copper target and the back plate with threads are subjected to surface treatment and drying before assembly; the surface treatment comprises rust cleaning and ultrasonic cleaning; the rust removal is to remove rust on the thread surface along the thread direction by using a steel wire brush; the ultrasonic cleaning time is 20-30 min; the drying mode is vacuum drying; the vacuum degree of the vacuum drying is less than or equal to 0.01 Pa; the drying temperature is 60-80 ℃; the drying time is 60-80 min; the cushion block is made of any one of copper, copper alloy or stainless steel; the thickness of the cushion block is 7-10 mm; the welding mode is argon arc welding; the vacuum degree of the vacuumizing is less than or equal to 0.01 Pa;
(2) carrying out hot isostatic pressing treatment on the vacuumized sheath, cooling and removing the sheath to finish welding; the pressure of the hot isostatic pressing treatment is 95-105 MPa; the temperature of the hot isostatic pressing treatment is 250-270 ℃; the time of the hot isostatic pressing treatment is 3-5 h.
Compared with the prior art, the invention at least has the following beneficial effects:
the method provided by the invention can inhibit abnormal growth of crystal grains at the edge of the ultra-high pure copper target material in the welding process, thereby ensuring the welding strength and inhibiting the growth of the crystal grains only by reducing the temperature and eliminating the stress concentration area.
Drawings
FIG. 1 is a schematic view of the assembly of a target, a backing plate, a spacer and a sheath in example 1 of the present invention;
FIG. 2 is a photograph showing the corrosion of the target and backing plate welded in example 1 of the present invention;
FIG. 3 is a photograph showing the corrosion of the target and backing plate welded in example 2 of the present invention;
FIG. 4 is a photograph showing the corrosion of the target and backing plate welded in example 3 of the present invention;
FIG. 5 is a photograph showing the corrosion of the target and backing plate welded in example 4 of the present invention;
FIG. 6 is a photograph showing the corrosion of the target and backing plate welded in comparative example 1 of the present invention;
FIG. 7 is a photograph of an etch of a target and backing plate welded in comparative example 2 of the present invention;
FIG. 8 is a photograph of an etch of the target and backing plate welded in comparative example 3 of the present invention.
The present invention is described in further detail below. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
To better illustrate the invention and to facilitate the understanding of the technical solutions thereof, typical but non-limiting examples of the invention are as follows:
example 1
The embodiment provides a diffusion welding method of an ultra-high pure copper target, and the welding assembly method comprises the following steps:
(1) placing the assembled ultrahigh pure copper target material (more than or equal to 6N) and the threaded back plate into a sheath, arranging a cushion block between the ultrahigh pure copper target material and a sheath cover plate, and then welding and vacuumizing the sheath; the thread of the back plate is arranged on the welding surface of the back plate; the back plate is provided with a groove matched with the ultrahigh pure copper target material, and the depth of the groove is higher than the thickness of the ultrahigh pure copper target material; the pitch of the threads is 0.18 mm; the depth of the thread is 0.13 mm; the back plate is a CuZn alloy back plate; the ultrahigh pure copper target and the back plate with threads are subjected to surface treatment and drying before assembly; the surface treatment comprises rust cleaning and ultrasonic cleaning; the rust removal is to remove rust on the thread surface along the thread direction by using a steel wire brush; the ultrasonic cleaning time is 20 min; the drying mode is vacuum drying; the vacuum degree of the vacuum drying is 0.01 Pa; the drying temperature is 66 ℃; the drying time is 80 min; the cushion block is made of copper; the thickness of the cushion block is 9.2 mm; the welding mode is argon arc welding; the vacuum degree of the vacuumizing is 0.01 Pa; the assembly of the target, backing plate and capsule is shown in fig. 1. A 304 stainless steel plate with the thickness not more than 0.3mm is arranged between the cushion block and the ultra-high pure copper target;
(2) carrying out hot isostatic pressing treatment on the vacuumized sheath, cooling and removing the sheath to finish welding; the pressure of the hot isostatic pressing treatment is 105 MPa; the temperature of the hot isostatic pressing treatment is 261 ℃; the time of the hot isostatic pressing treatment is 3 h.
The welded target and backing plate were subjected to corrosion testing and the photographs are shown in fig. 2.
Example 2
The embodiment provides a diffusion welding method of an ultra-high pure copper target, and the welding assembly method comprises the following steps:
(1) placing the assembled ultrahigh pure copper target material (more than or equal to 6N) and the threaded back plate into a sheath, arranging a cushion block between the ultrahigh pure copper target material and a sheath cover plate, and then welding and vacuumizing the sheath; the thread of the back plate is arranged on the welding surface of the back plate; the back plate is provided with a groove matched with the ultrahigh pure copper target material, and the depth of the groove is higher than the thickness of the ultrahigh pure copper target material; the pitch of the threads is 0.2 mm; the depth of the thread is 0.1 mm; the back plate is a CuZn alloy back plate; the ultrahigh pure copper target and the back plate with threads are subjected to surface treatment and drying before assembly; the surface treatment comprises rust cleaning and ultrasonic cleaning; the rust removal is to remove rust on the thread surface along the thread direction by using a steel wire brush; the ultrasonic cleaning time is 28 min; the drying mode is vacuum drying; the vacuum degree of the vacuum drying is 0.001 Pa; the drying temperature is 73 ℃; the drying time is 76 min; the cushion block is made of 316L stainless steel; the thickness of the cushion block is 7 mm; the welding mode is argon arc welding; the vacuum degree of the vacuumizing is 0.001 Pa;
(2) carrying out hot isostatic pressing treatment on the vacuumized sheath, cooling and removing the sheath to finish welding; the pressure of the hot isostatic pressing treatment is 102 MPa; the temperature of the hot isostatic pressing treatment is 270 ℃; the time for the hot isostatic pressing treatment was 4 h.
The welded target and backing plate were subjected to corrosion testing and the photographs are shown in fig. 3.
Example 3
The embodiment provides a diffusion welding method of an ultra-high pure copper target, and the welding assembly method comprises the following steps:
(1) placing the assembled ultrahigh pure copper target material (more than or equal to 6N) and the threaded back plate into a sheath, arranging a cushion block between the ultrahigh pure copper target material and a sheath cover plate, and then welding and vacuumizing the sheath; the thread of the back plate is arranged on the welding surface of the back plate; the back plate is provided with a groove matched with the ultrahigh pure copper target material, and the depth of the groove is higher than the thickness of the ultrahigh pure copper target material; the pitch of the threads is 0.25 mm; the depth of the thread is 0.115 mm; the back plate is a CuCr alloy back plate; the ultrahigh pure copper target and the back plate with threads are subjected to surface treatment and drying before assembly; the surface treatment comprises rust cleaning and ultrasonic cleaning; the rust removal is to remove rust on the thread surface along the thread direction by using a steel wire brush; the ultrasonic cleaning time is 24 min; the drying mode is vacuum drying; the vacuum degree of the vacuum drying is 0.007 Pa; the drying temperature is 60 ℃; the drying time is 60 min; the cushion block is made of 304 stainless steel; the thickness of the cushion block is 7.8 mm; the welding mode is argon arc welding; the vacuum degree of the vacuumizing is 0.007 Pa;
(4) carrying out hot isostatic pressing treatment on the vacuumized sheath, cooling and removing the sheath to finish welding; the pressure of the hot isostatic pressing treatment is 98 MPa; the temperature of the hot isostatic pressing treatment is 250 ℃; the time of the hot isostatic pressing treatment is 5 h.
The welded target and backing plate were subjected to corrosion testing and the photographs are shown in fig. 4.
Example 4
The embodiment provides a diffusion welding method of an ultra-high pure copper target, and the welding assembly method comprises the following steps:
(1) placing the assembled ultrahigh pure copper target material (more than or equal to 6N) and the threaded back plate into a sheath, arranging a cushion block between the ultrahigh pure copper target material and a sheath cover plate, and then welding and vacuumizing the sheath; the thread of the back plate is arranged on the welding surface of the back plate; the back plate is provided with a groove matched with the ultrahigh pure copper target material, and the depth of the groove is higher than the thickness of the ultrahigh pure copper target material; the pitch of the threads is 0.15 mm; the depth of the thread is 0.15 mm; the back plate is a CuZn alloy back plate; the ultrahigh pure copper target and the back plate with threads are subjected to surface treatment and drying before assembly; the surface treatment comprises rust cleaning and ultrasonic cleaning; the rust removal is to remove rust on the thread surface along the thread direction by using a steel wire brush; the ultrasonic cleaning time is 30 min; the drying mode is vacuum drying; the vacuum degree of the vacuum drying is 0.004 Pa; the drying temperature is 79 ℃; the drying time is 65 min; the cushion block is made of copper CuCr alloy; the thickness of the cushion block is 10 mm; the welding mode is argon arc welding; the vacuum degree of the vacuumizing is 0.004 Pa; a 316L stainless steel plate with the thickness not more than 0.3mm is arranged between the cushion block and the ultra-high pure copper target;
(4) carrying out hot isostatic pressing treatment on the vacuumized sheath, cooling and removing the sheath to finish welding; the pressure of the hot isostatic pressing treatment is 95 MPa; the temperature of the hot isostatic pressing treatment is 256 ℃; the time for the hot isostatic pressing treatment was 3.6 h.
The welded target and backing plate were subjected to corrosion testing and the photographs are shown in fig. 5.
Comparative example 1
The only difference from example 2 is that the welded target and backing plate were subjected to corrosion testing without the spacer, and the photograph thereof is shown in fig. 6.
Comparative example 2
The only difference from example 2 is that the welded target and backing plate were subjected to corrosion testing without threading, and the photographs are shown in fig. 7.
Comparative example 3
The only difference from example 2 is that no screw thread and no spacer are provided, and the welded target and backing plate are subjected to corrosion test, and the photograph thereof is shown in fig. 8.
According to the results of the embodiment and the comparative example, the cushion block is added above the ultrahigh pure copper target material to eliminate the stress concentration area at the edge of the ultrahigh pure copper target material during the sheath assembly, so that the abnormal growth of crystal grains at the edge of the ultrahigh pure copper target material is inhibited in the welding process, the welding strength is ensured, and the growth of the crystal grains is inhibited only by reducing the temperature and eliminating the stress concentration area.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911358716.8A CN110977133A (en) | 2019-12-25 | 2019-12-25 | A kind of diffusion welding method of ultra-high purity copper target |
Applications Claiming Priority (1)
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| CN111136396A (en) * | 2020-01-16 | 2020-05-12 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for copper target and back plate |
| CN111618471A (en) * | 2020-06-18 | 2020-09-04 | 宁波江丰电子材料股份有限公司 | Welding structure and welding method for ultrahigh pure copper target |
| CN112091401A (en) * | 2020-09-11 | 2020-12-18 | 宁波江丰电子材料股份有限公司 | Titanium-aluminum alloy target material and welding method thereof |
| CN113210832A (en) * | 2021-06-02 | 2021-08-06 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for aluminum-scandium alloy target |
| CN113894401A (en) * | 2021-10-20 | 2022-01-07 | 宁波江丰电子材料股份有限公司 | Method for low-temperature diffusion welding of ultrahigh-purity copper target assembly |
| CN114622175A (en) * | 2022-03-21 | 2022-06-14 | 宁波江丰电子材料股份有限公司 | Ultrahigh-purity copper target material and preparation method thereof |
| CN115255642A (en) * | 2022-08-31 | 2022-11-01 | 宁波江丰电子材料股份有限公司 | A method for welding copper target and aluminum alloy back plate |
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