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CN111024739B - Characterization method and characterization device for image distortion of transmission electron microscope - Google Patents

Characterization method and characterization device for image distortion of transmission electron microscope Download PDF

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CN111024739B
CN111024739B CN201911403921.1A CN201911403921A CN111024739B CN 111024739 B CN111024739 B CN 111024739B CN 201911403921 A CN201911403921 A CN 201911403921A CN 111024739 B CN111024739 B CN 111024739B
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microscope image
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CN111024739A (en
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张正飞
魏强民
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Yangtze Memory Technologies Co Ltd
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Abstract

The invention provides a characterization method of transmission electron microscope image distortion. The characterization method of the image distortion of the transmission electron microscope comprises the following steps: forming a plurality of first through hole groups; acquiring a first transmission electron microscope image of a sample at a first reference multiplying power and a second transmission electron microscope image at a first target multiplying power, wherein the first target multiplying power is lower than the first reference multiplying power; acquiring a first reference distance between two first through holes in each first through hole group in a first transmission electron microscope image and a first target distance between two first through holes in each first through hole group in a second transmission electron microscope image; distortion information of the transmission electron microscope image at the first target magnification with respect to the transmission electron microscope image at the first reference magnification is acquired. The method can obtain the distortion condition of the transmission electron microscope image under the target multiplying power lower than the reference multiplying power, and is simple and convenient to operate.

Description

透射电子显微镜图像畸变的表征方法及表征装置Characterization method and device for transmission electron microscope image distortion

技术领域technical field

本发明涉及半导体分析技术领域，尤其涉及一种透射电子显微镜图像畸变的表征方法。The invention relates to the technical field of semiconductor analysis, in particular to a method for characterizing image distortion of a transmission electron microscope.

背景技术Background technique

透射电子显微镜(Transmission Electron Microscope，TEM)是把经加速和聚集的电子束投射到非常薄的样品上，电子与样品中的原子碰撞而改变方向，从而产生立体角散射。散射角的大小与样品的密度、厚度相关，因此可以形成明暗不同的影像，影像将在放大、聚焦后在成像器件(如荧光屏、胶片、以及感光耦合组件)上显示出来。Transmission Electron Microscope (TEM) projects an accelerated and concentrated electron beam onto a very thin sample, and the electrons collide with the atoms in the sample to change their direction, resulting in solid angle scattering. The size of the scattering angle is related to the density and thickness of the sample, so images with different brightness and darkness can be formed, and the images will be displayed on imaging devices (such as fluorescent screens, films, and photosensitive coupling components) after zooming in and focusing.

集成电路内部的大量半导体结构的关键尺寸都在纳米级，因此，半导体结构关键尺寸信息的获得需要依赖于透射电子显微镜图像，因此，透射电子显微镜图像成像质量的好坏就直接决定了半导体结构量测结果的准确度和精确度。透射电子显微镜中的各硬件本身的缺陷，例如各级磁透镜的像差和像散、相机的缺陷等，都会引起TEM图像畸变，最终导致半导体结构出现较大的量测误差。因此，对透射电子显微镜图像的畸变度进行表征，对于提高半导体结构量测的准确度具有重要意义。但是，当前并没有有效的方法对不同倍率下的透射电子显微镜的图像畸变程度进行表征。The critical dimensions of a large number of semiconductor structures inside integrated circuits are at the nanometer level. Therefore, the acquisition of information on the critical dimensions of semiconductor structures depends on transmission electron microscope images. Therefore, the imaging quality of transmission electron microscope images directly determines the quality of semiconductor structures. accuracy and precision of the results. The defects of the hardware in the transmission electron microscope, such as the aberration and astigmatism of the magnetic lenses at all levels, and the defects of the camera, etc., will cause TEM image distortion, which will eventually lead to large measurement errors in the semiconductor structure. Therefore, characterizing the degree of distortion of transmission electron microscope images is of great significance for improving the accuracy of semiconductor structure measurement. However, there is currently no effective method to characterize the degree of image distortion of the transmission electron microscope under different magnifications.

因此，如何对透射电子显微镜的图像畸变程度进行表征，以便于提高半导体结构量测的准确度和精确度，是目前亟待解决的技术问题。Therefore, how to characterize the degree of image distortion of the transmission electron microscope in order to improve the accuracy and precision of semiconductor structure measurement is a technical problem that needs to be solved urgently.

发明内容Contents of the invention

本发明提供一种透射电子显微镜图像畸变的表征方法及表征装置，用于解决现有技术中无法对透射电子显微镜的图像畸变情况进行有效表征的问题，以提高半导体结构量测的准确度和精确度。The present invention provides a characterization method and characterization device for transmission electron microscope image distortion, which is used to solve the problem that the image distortion of transmission electron microscope cannot be effectively characterized in the prior art, so as to improve the accuracy and precision of semiconductor structure measurement Spend.

为了解决上述问题，本发明提供了一种透射电子显微镜图像畸变的表征方法，包括如下步骤：In order to solve the above problems, the present invention provides a method for characterizing distortion of a transmission electron microscope image, comprising the following steps:

提供一样品；provide a sample;

形成多个第一通孔组，每个所述第一通孔组包括两个贯穿所述样品的第一通孔，且任意两个所述第一通孔组内的两个所述第一通孔之间的连线方向互不相同；A plurality of first through-hole groups are formed, each of the first through-hole groups includes two first through-holes penetrating through the sample, and two first through-holes in any two first through-hole groups The connection directions between the vias are different from each other;

获取所述样品在一第一参考倍率下的第一透射电子显微镜图像、以及一待表征的第一目标倍率下的第二透射电子显微镜图像，所述第一目标倍率低于所述第一参考倍率；acquiring a first TEM image of the sample at a first reference magnification, and a second TEM image at a first target magnification to be characterized, the first target magnification being lower than the first reference magnification magnification;

获取所述第一透射电子显微镜图像中每一第一通孔组内的两个所述第一通孔之间的第一参考距离、以及所述第二透射电子显微镜图像中每一第一通孔组内的两个所述第一通孔之间的第一目标距离；Obtaining a first reference distance between two first through holes in each first through hole group in the first transmission electron microscope image, and a first reference distance between each first through hole in the second transmission electron microscope image. a first target distance between two said first through-holes within the hole set;

根据多个所述第一参考距离与多个所述第一目标距离获取所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变信息。The distortion information of the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification is acquired according to the multiple first reference distances and the multiple first target distances.

可选的，所述样品为单晶硅样品；形成多个第一通孔组之前，还包括如下步骤：Optionally, the sample is a single crystal silicon sample; before forming a plurality of first through hole groups, the following steps are also included:

获取所述单晶硅样品在所述第一参考倍率下的第三透射电子显微镜图像；acquiring a third transmission electron microscope image of the single crystal silicon sample at the first reference magnification;

根据所述第三透射电子显微镜图像判断所述第一参考倍率下的透射电子显微镜图像的畸变度是否小于或等于第一预设值，若否，则对透射电子显微镜进行调试。Judging according to the third transmission electron microscope image whether the distortion degree of the transmission electron microscope image under the first reference magnification is less than or equal to a first preset value, if not, debugging the transmission electron microscope.

可选的，根据所述第三透射电子显微镜图像判断所述第一参考倍率下的透射电子显微镜图像的畸变度是否小于或等于第一预设值之前，还包括如下步骤：Optionally, before judging whether the distortion degree of the transmission electron microscope image under the first reference magnification is less than or equal to the first preset value according to the third transmission electron microscope image, the following steps are also included:

所述第三透射电子显微镜图像为所述单晶硅样品在[110]带轴下的图像；The third transmission electron microscope image is an image of the single crystal silicon sample under the [110] band axis;

获取所述第三透射电子显微镜图像中(1-11)晶面间距d1和(-111)晶面间距d2，并采用如下公式计算所述第一参考倍率下的透射电子显微镜图像的畸变度β0：Obtain the (1-11) interplanar distance d 1 and (-111) interplanar distance d 2 in the third transmission electron microscope image, and use the following formula to calculate the distortion of the transmission electron microscope image at the first reference magnification Degree β 0 :

β0＝(d1/d2-1)×100％。β 0 =(d 1 /d 2 −1)×100%.

可选的，所述第一预设值为0.5％。Optionally, the first preset value is 0.5%.

可选的，形成多个第一通孔组的具体步骤包括：Optionally, the specific steps of forming a plurality of first through hole groups include:

根据所述第一参考倍率与待表征的所述第一目标倍率之间的比例关系，调整所述第一通孔组内的两个所述第一通孔之间的距离。According to the proportional relationship between the first reference magnification and the first target magnification to be characterized, the distance between the two first through holes in the first through hole group is adjusted.

可选的，形成多个第一通孔组的具体步骤包括：Optionally, the specific steps of forming a plurality of first through hole groups include:

采用聚焦电子束辐照所述样品，形成多个所述第一通孔组。The sample is irradiated with a focused electron beam to form a plurality of first through hole groups.

可选的，获取所述第一透射电子显微镜图像中每一第一通孔组内的两个所述第一通孔之间的第一参考距离的具体步骤包括：Optionally, the specific steps of acquiring the first reference distance between the two first through holes in each first through hole group in the first transmission electron microscope image include:

获取所述第一透射电子显微镜图像中每一第一通孔组内的两个所述第一通孔圆心之间的距离作为所述第一参考距离。Obtaining the distance between the centers of two first through holes in each first through hole group in the first transmission electron microscope image as the first reference distance.

可选的，所述第一通孔组的数量为2个，四个所述第一通孔围绕形成一四边形，每一所述第一通孔组内的两个所述第一通孔之间的连线为所述四边形的一条对角线。Optionally, the number of the first through hole group is 2, and the four first through holes surround a quadrangle, and each of the two first through hole groups in the first through hole group The connecting line between is a diagonal line of the quadrilateral.

可选的，根据多个所述第一参考距离与多个所述第一目标距离获取所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变信息的具体步骤包括：Optionally, acquiring the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification according to multiple first reference distances and multiple first target distances The specific steps of distorting information include:

采用如下公式计算所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变度β1：The distortion degree β 1 of the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification is calculated by using the following formula:

β1＝(A0 B1/A1 B0-1)×100％；β 1 = (A 0 B 1 /A 1 B 0 -1)×100%;

式中，A0为所述第一透射电子显微镜图像中一个所述第一通孔组内的两个所述第一通孔之间的距离，B0为所述第一透射电子显微镜图像中另一个所述第一通孔组内的两个所述第一通孔之间的距离，A1为所述第二透射电子显微镜图像中一个所述第一通孔组内的两个所述第一通孔之间的距离，B1为所述第二透射电子显微镜图像中另一个所述第一通孔组内的两个所述第一通孔之间的距离。In the formula, A 0 is the distance between two first through holes in one first through hole group in the first transmission electron microscope image, and B 0 is the distance between the two first through holes in the first transmission electron microscope image. The distance between the two first through holes in the other first through hole group, A1 is the distance between the two first through hole groups in the second transmission electron microscope image. The distance between the first through holes, B 1 is the distance between the two first through holes in the other first through hole group in the second transmission electron microscope image.

可选的，还包括如下步骤：Optionally, the following steps are also included:

判断所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变度β1是否小于或等于第二预设值，若是，则于所述样品中形成多个第二通孔组，每个所述第二通孔组包括两个贯穿所述样品的第二通孔，且任意两个所述第二通孔组内的两个所述第二通孔之间的连线方向互不相同，任一所述第二通孔组内的两个所述第二通孔之间的距离大于任一所述第一通孔组内的两个所述第一通孔之间的距离；Judging whether the distortion degree β1 of the transmission electron microscope image under the first target magnification relative to the transmission electron microscope image under the first reference magnification is less than or equal to a second preset value, and if so, in the sample Forming a plurality of second through hole groups, each of the second through hole groups includes two second through holes penetrating through the sample, and any two second through hole groups in any two second through hole groups The connection directions between the through holes are different from each other, and the distance between the two second through holes in any one of the second through hole groups is greater than the distance between the two second through holes in any one of the first through hole groups. The distance between the first through holes;

获取所述样品在所述第一目标倍率下的第四透射电子显微镜图像；acquiring a fourth transmission electron microscope image of the sample at the first target magnification;

获取所述第四透射电子显微镜图像中每一第二通孔组内的两个所述第二通孔之间的第二参考距离；acquiring a second reference distance between two second through holes in each second through hole group in the fourth transmission electron microscope image;

获取所述样品在一待表征的第二目标倍率下的第五透射电子显微镜图像，所述第二目标倍率低于所述第一目标倍率；acquiring a fifth transmission electron microscope image of the sample at a second target magnification to be characterized, the second target magnification being lower than the first target magnification;

获取所述第五透射电子显微镜图像中每一第二通孔组内的两个所述第二通孔之间的第二目标距离；acquiring a second target distance between two second through holes in each second through hole group in the fifth transmission electron microscope image;

根据多个所述第二参考距离与多个所述第二目标距离获取所述第二目标倍率下的透射电子显微镜图像相对于所述第一目标倍率下的透射电子显微镜图像的畸变信息。The distortion information of the transmission electron microscope image under the second target magnification relative to the transmission electron microscope image under the first target magnification is acquired according to the multiple second reference distances and the multiple second target distances.

可选的，所述第二预设值为1％。Optionally, the second preset value is 1%.

可选的，所述第一参考倍率为大于或等于190Kx的倍率。Optionally, the first reference magnification is a magnification greater than or equal to 190Kx.

为了解决上述问题，本发明还提供了一种透射电子显微镜图像畸变的表征装置，包括：In order to solve the above problems, the present invention also provides a characterization device for transmission electron microscope image distortion, including:

获取模块，用于获取一样品在一第一参考倍率下的第一透射电子显微镜图像、以及所述样品在一待表征的第一目标倍率下的第二透射电子显微镜图像，所述第一目标倍率低于所述第一参考倍率，所述样品中具有多个第一通孔组，每个所述第一通孔组包括两个贯穿所述样品的第一通孔，且任意两个所述第一通孔组内的两个所述第一通孔之间的连线方向互不相同；An acquisition module, configured to acquire a first transmission electron microscope image of a sample at a first reference magnification, and a second transmission electron microscope image of the sample at a first target magnification to be characterized, the first target The magnification is lower than the first reference magnification, the sample has a plurality of first through-hole groups, each of the first through-hole groups includes two first through-holes penetrating the sample, and any two of the first through-hole groups The connection directions between the two first through holes in the first through hole group are different from each other;

量测模块，用于获取所述第一透射电子显微镜图像中每一第一通孔组内的两个所述第一通孔之间的第一参考距离、以及所述第二透射电子显微镜图像中每一第一通孔组内的两个所述第一通孔之间的第一目标距离；A measurement module, configured to acquire a first reference distance between two first through holes in each first through hole group in the first transmission electron microscope image, and the second transmission electron microscope image a first target distance between the two first through holes in each first through hole group;

分析模块，用于根据多个所述第一参考距离与多个所述第一目标距离获取所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变信息。An analysis module, configured to acquire a transmission electron microscope image at the first target magnification relative to a transmission electron microscope image at the first reference magnification according to a plurality of the first reference distances and a plurality of the first target distances distortion information.

可选的，所述样品为单晶硅样品；所述获取模块还用于获取所述单晶硅样品在所述第一参考倍率下的第三透射电子显微镜图像；Optionally, the sample is a single crystal silicon sample; the acquisition module is also used to acquire a third transmission electron microscope image of the single crystal silicon sample at the first reference magnification;

所述分析模块还用于根据所述第三透射电子显微镜图像判断所述第一参考倍率下的透射电子显微镜图像的畸变度是否小于或等于第一预设值，若否，则对透射电子显微镜进行调试。The analysis module is also used to judge whether the distortion degree of the transmission electron microscope image under the first reference magnification is less than or equal to the first preset value according to the third transmission electron microscope image; for debugging.

可选的，所述第三透射电子显微镜图像为所述单晶硅样品在[110]带轴下的图像；所述量测模块还用于获取所述第三透射电子显微镜图像中(1-11)晶面间距d1和(-111)晶面间距d2；Optionally, the third transmission electron microscope image is an image of the single crystal silicon sample under the [110] band axis; the measurement module is also used to acquire the third transmission electron microscope image (1- 11) interplanar spacing d 1 and (-111) interplanar spacing d 2 ;

所述分析模块还用于采用如下公式计算所述第一参考倍率下的透射电子显微镜图像的畸变度β0：The analysis module is also used to calculate the distortion degree β 0 of the transmission electron microscope image under the first reference magnification by using the following formula:

β0＝(d1/d2-1)×100％。β 0 =(d 1 /d 2 −1)×100%.

可选的，所述第一预设值为0.5％。Optionally, the first preset value is 0.5%.

可选的，所述第一通孔组的数量为2个，四个所述第一通孔围绕形成一四边形，每一所述第一通孔组内的两个所述第一通孔之间的连线为所述四边形的一条对角线。Optionally, the number of the first through hole group is 2, and the four first through holes surround a quadrangle, and each of the two first through hole groups in the first through hole group The connecting line between is a diagonal line of the quadrilateral.

可选的，所述量测模块还用于获取所述第一透射电子显微镜图像中一个所述第一通孔组内的两个所述第一通孔之间的距离A0、所述第一透射电子显微镜图像中另一个所述第一通孔组内的两个所述第一通孔之间的距离B0、所述第二透射电子显微镜图像中一个所述第一通孔组内的两个所述第一通孔之间的距离A1、所述第二透射电子显微镜图像中另一个所述第一通孔组内的两个所述第一通孔之间的距离B1；Optionally, the measurement module is also used to acquire the distance A 0 between two first through holes in one first through hole group in the first transmission electron microscope image, the second The distance B 0 between the two first through holes in the other first through hole group in a transmission electron microscope image, and the distance B 0 between the two first through hole groups in the second transmission electron microscope image The distance A 1 between the two first through holes in the second transmission electron microscope image, the distance B 1 between the two first through holes in the other first through hole group ;

所述分析模块还用于采用如下公式计算所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变度β1：The analysis module is also used to calculate the degree of distortion β 1 of the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification by using the following formula:

β1＝(A0 B1/A1 B0-1)×100％。β 1 =(A 0 B 1 /A 1 B 0 −1)×100%.

本发明提供的透射电子显微镜图像畸变的表征方法及表征装置，通过在一样品中形成多个通孔组，且每一通孔组内包括两个贯穿所述样品的通孔，以一参考倍率下通孔组内两个通孔之间的距离作为参考值，将目标倍率下所述通孔组内两个通孔之间的目标距离与所述参考值进行比较，从而可以获得在低于所述参考倍率的目标倍率下的透射电子显微镜图像畸变情况，操作简单、便捷，为后续半导体结构在目标倍率下的量测提供了参考，从而有助于提高半导体结构量测的准确度和精确度。The characterization method and characterization device for transmission electron microscope image distortion provided by the present invention form a plurality of through-hole groups in a sample, and each through-hole group includes two through-holes penetrating through the sample, and a reference magnification The distance between two through holes in the through hole group is used as a reference value, and the target distance between the two through holes in the through hole group under the target magnification is compared with the reference value, so that the distance between the two through holes in the through hole group can be obtained below the specified value. The image distortion of the transmission electron microscope under the target magnification of the above-mentioned reference magnification is simple and convenient to operate, which provides a reference for the subsequent measurement of semiconductor structures at the target magnification, thereby helping to improve the accuracy and precision of semiconductor structure measurement .

附图说明Description of drawings

附图1是本发明具体实施方式中透射电子显微镜图像畸变的表征方法流程图；Accompanying drawing 1 is the characterization method flowchart of transmission electron microscope image distortion in the specific embodiment of the present invention;

附图2是本发明具体实施方式中的样品在不同倍率下的透射电子显微镜图像的示意图；Accompanying drawing 2 is the schematic diagram of the transmission electron microscope image of the sample in the specific embodiment of the present invention under different magnifications;

附图3是本发明具体实施方式中第二通孔组与第一通孔组的示意图；Accompanying drawing 3 is the schematic diagram of the second through hole group and the first through hole group in the specific embodiment of the present invention;

附图4是本发明具体实施方式中透射电子显微镜图像畸变的表征装置的结构框图。Figure 4 is a structural block diagram of a characterization device for transmission electron microscope image distortion in a specific embodiment of the present invention.

具体实施方式Detailed ways

下面结合附图对本发明提供的透射电子显微镜图像畸变的表征方法及表征装置的具体实施方式做详细说明。The specific implementation of the characterization method and characterization device for transmission electron microscope image distortion provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

当前的透射电子显微镜图像畸变的表征方法，只能应用于高倍率下获得的高分辨率透射电子显微镜图像，而在一些低倍率情况下，由于无法获得高分辨率的透射电子显微镜图像，因此，无法对低倍率下的图像畸变情况进行表征。然而，在半导体工业中，由于半导体结构的尺寸范围往往处于中低倍率的视野范围内，因此，工程师更关心的是这些中低倍率下半导体结构的透射电子显微镜图像是否存在畸变过大的现象。The current characterization method of transmission electron microscope image distortion can only be applied to high-resolution transmission electron microscope images obtained at high magnification, and in some low-magnification cases, due to the inability to obtain high-resolution transmission electron microscope images, therefore, Image distortion at low magnifications cannot be characterized. However, in the semiconductor industry, since the size range of semiconductor structures is often within the low-to-medium magnification field of view, engineers are more concerned about whether there is excessive distortion in the transmission electron microscope images of these semiconductor structures at low-to-medium magnifications.

为了对中低倍率下的透射电子显微镜图像的畸变情况进行表征，本具体实施方式提供了一种透射电子显微镜图像畸变的表征方法及表征装置，附图1是本发明具体实施方式中透射电子显微镜图像畸变的表征方法流程图。如图1所示，本具体实施方式提供的透射电子显微镜图像畸变的表征方法，包括如下步骤：In order to characterize the distortion of transmission electron microscope images under medium and low magnifications, this specific embodiment provides a characterization method and characterization device for transmission electron microscope image distortion, and accompanying drawing 1 is a transmission electron microscope in a specific embodiment of the present invention Flow chart of image distortion characterization method. As shown in Figure 1, the characterization method of transmission electron microscope image distortion provided by this specific embodiment includes the following steps:

步骤S11，提供一样品。Step S11, providing a sample.

具体来说，所述样品可以是任何能够在高倍率下的透射电子显微镜中拍摄出高分辨率图像的样品，例如可以是但不限于单晶硅样品。Specifically, the sample may be any sample capable of taking high-resolution images in a high-magnification transmission electron microscope, such as but not limited to a single crystal silicon sample.

步骤S12，形成多个第一通孔组，每个所述第一通孔组包括两个贯穿所述样品的第一通孔，且任意两个所述第一通孔组内的两个所述第一通孔之间的连线方向互不相同。Step S12, forming a plurality of first through-hole groups, each of the first through-hole groups includes two first through-holes penetrating through the sample, and the two first through-hole groups in any two first through-hole groups The connection directions between the first through holes are different from each other.

可选的，所述样品为单晶硅样品；形成多个第一通孔组之前，还包括如下步骤：Optionally, the sample is a single crystal silicon sample; before forming a plurality of first through hole groups, the following steps are also included:

获取所述单晶硅样品在所述第一参考倍率下的第三透射电子显微镜图像；acquiring a third transmission electron microscope image of the single crystal silicon sample at the first reference magnification;

根据所述第三透射电子显微镜图像判断所述第一参考倍率下的透射电子显微镜图像的畸变度是否小于或等于第一预设值，若否，则对透射电子显微镜进行调试。Judging according to the third transmission electron microscope image whether the distortion degree of the transmission electron microscope image under the first reference magnification is less than or equal to a first preset value, if not, debugging the transmission electron microscope.

可选的，根据所述第三透射电子显微镜图像判断所述第一参考倍率下的透射电子显微镜图像的畸变度是否小于或等于第一预设值之前，还包括如下步骤：Optionally, before judging whether the distortion degree of the transmission electron microscope image under the first reference magnification is less than or equal to the first preset value according to the third transmission electron microscope image, the following steps are also included:

所述第三透射电子显微镜图像为所述单晶硅样品在[110]带轴下的图像；The third transmission electron microscope image is an image of the single crystal silicon sample under the [110] band axis;

获取所述第三透射电子显微镜图像中(1-11)晶面间距d1和(-111)晶面间距d2，并采用如下公式计算所述第一参考倍率下的透射电子显微镜图像的畸变度β0：Obtain the (1-11) interplanar distance d 1 and (-111) interplanar distance d 2 in the third transmission electron microscope image, and use the following formula to calculate the distortion of the transmission electron microscope image at the first reference magnification Degree β 0 :

β0＝(d1/d2-1)×100％。β 0 =(d 1 /d 2 −1)×100%.

可选的，所述第一预设值为0.5％。Optionally, the first preset value is 0.5%.

可选的，所述第一参考倍率为大于或等于190Kx的倍率。Optionally, the first reference magnification is a magnification greater than or equal to 190Kx.

具体来说，在对低倍率下的透射电子显微镜图像的畸变进行表征之前，先对第一参考倍率下的透射电子显微镜图像的畸变进行校准，以确保后续获得的相对畸变信息的准确度。若采用上述公式计算得到的所述第一参考倍率下的透射电子显微镜图像的畸变度β0小于或等于所述第一预设值，则确认该倍率下的透射电子显微镜图像可以作为后续低倍率下的透射电子显微镜图像是否发生畸变以及畸变程度的参考标准。若采用上述公式计算得到的所述第一参考倍率下的透射电子显微镜图像的畸变度β0大于所述第一预设值，则说明所述第一参考倍率下的透射电子显微镜图像的畸变程度过大，可能会影响后续低倍率下的透射电子显微镜图像是否发生畸变以及畸变程度的确定，此时，可以对该透射电子显微镜进行调校，直至所述第一参考倍率下的透射电子显微镜图像的畸变度β0小于或等于所述第一预设值。Specifically, before characterizing the distortion of the transmission electron microscope image at low magnification, the distortion of the transmission electron microscope image at the first reference magnification is first calibrated to ensure the accuracy of the relative distortion information obtained subsequently. If the distortion degree β0 of the transmission electron microscope image at the first reference magnification calculated by the above formula is less than or equal to the first preset value, it is confirmed that the transmission electron microscope image at this magnification can be used as a subsequent low magnification The following transmission electron microscope image is distorted and the reference standard of the degree of distortion. If the degree of distortion β0 of the transmission electron microscope image at the first reference magnification calculated by the above formula is greater than the first preset value, it indicates the degree of distortion of the transmission electron microscope image at the first reference magnification If it is too large, it may affect whether the transmission electron microscope image under low magnification is distorted and the determination of the degree of distortion. At this time, the transmission electron microscope can be adjusted until the transmission electron microscope image under the first reference magnification The degree of distortion β 0 is less than or equal to the first preset value.

可选的，形成多个第一通孔组的具体步骤包括：Optionally, the specific steps of forming a plurality of first through hole groups include:

采用聚焦电子束辐照所述样品，形成多个所述第一通孔组。The sample is irradiated with a focused electron beam to form a plurality of first through hole groups.

具体来说，所述样品为厚度为60nm的单晶硅样品。在形成所述第一通孔组的过程中，可以采用高能聚焦电子束(例如能量为200KeV)辐照所述单晶硅样品，从而在所述单晶硅样品中形成多个所述第一通孔组。每一所述通孔贯穿所述单晶硅样品，以便于后续在透射电子显微镜图像中识别所述通孔。所述通孔的截面形状可以为圆形、椭圆形或者任意多边形，本具体实施防水对此不作限定。本具体实施方式中所述的“多个”是指两个以上。Specifically, the sample is a single crystal silicon sample with a thickness of 60 nm. In the process of forming the first through-hole group, the single-crystal silicon sample may be irradiated with a high-energy focused electron beam (for example, the energy is 200KeV), thereby forming a plurality of the first through-hole groups in the single-crystal silicon sample. via group. Each of the through holes runs through the single crystal silicon sample, so that the through holes can be identified in the transmission electron microscope image later. The cross-sectional shape of the through hole may be a circle, an ellipse or any polygon, which is not limited in this specific implementation of waterproofing. The "plurality" mentioned in this specific embodiment refers to two or more.

为了简化表征步骤，可选的，所述第一通孔组的数量为2个，四个所述第一通孔围绕形成一四边形，每一所述第一通孔组内的两个所述第一通孔之间的连线为所述四边形的一条对角线。In order to simplify the characterization step, optionally, the number of the first through-hole group is 2, four of the first through-holes surround a quadrangle, and two of the first through-hole groups in each first through-hole group The connecting line between the first through holes is a diagonal line of the quadrilateral.

在其他具体实施方式中，本领域技术人员可以根据实际需要设置所述第一通孔组的具体数量，例如所述第一通孔组的数量为3个、4个、5个等。In other specific implementation manners, those skilled in the art can set the specific number of the first through hole groups according to actual needs, for example, the number of the first through hole groups is 3, 4, 5 and so on.

步骤S13，获取所述样品在一第一参考倍率下的第一透射电子显微镜图像、以及一待表征的第一目标倍率下的第二透射电子显微镜图像，所述第一目标倍率低于所述第一参考倍率。Step S13, acquiring a first transmission electron microscope image of the sample at a first reference magnification and a second transmission electron microscope image at a first target magnification to be characterized, the first target magnification being lower than the The first reference magnification.

步骤S14，获取所述第一透射电子显微镜图像中每一第一通孔组内的两个所述第一通孔之间的第一参考距离、以及所述第二透射电子显微镜图像中每一第一通孔组内的两个所述第一通孔之间的第一目标距离。Step S14, acquiring the first reference distance between the two first through holes in each first through hole group in the first transmission electron microscope image, and the first reference distance between each of the first through hole groups in the second transmission electron microscope image. A first target distance between the two first through holes in the first through hole group.

可选的，获取所述第一透射电子显微镜图像中每一第一通孔组内的两个所述第一通孔之间的第一参考距离的具体步骤包括：Optionally, the specific steps of acquiring the first reference distance between the two first through holes in each first through hole group in the first transmission electron microscope image include:

获取所述第一透射电子显微镜图像中每一第一通孔组内的两个所述第一通孔圆心之间的距离作为所述第一参考距离。Obtaining the distance between the centers of two first through holes in each first through hole group in the first transmission electron microscope image as the first reference distance.

附图2是本发明具体实施方式中的样品在不同倍率下的透射电子显微镜图像的示意图。图2中依次示出了所述单晶硅样品在190Kx倍率、150Kx倍率、120Kx倍率、……、nKx倍率下的透射电子显微镜图像，其中，n为小于120的正整数。以下以190Kx倍率为所述第一参考倍率、150Kx倍率为第一目标倍率、所述第一通孔组的数量为2个、所述通孔的截面为圆形为例进行说明。如图2所示，在190Kx倍率下，测量所述第一透射电子显微镜图像中一第一通孔组中的两个通孔A与A’圆心之间的距离A0，并将此距离作为一个第一参考距离；在190Kx倍率下，测量所述第一透射电子显微镜图像中另一第一通孔组中的两个通孔B与B’圆心之间的距离B0，并将此距离作为另一个第一参考距离。在150Kx倍率下，测量所述第二透射电子显微镜图像中一第一通孔组中的两个通孔A与A’圆心之间的距离A1，并将此距离作为一个第一目标距离；在150Kx倍率下，测量所述第二透射电子显微镜图像中另一第一通孔组中的两个通孔B与B’圆心之间的距离B1，并将此距离作为另一个第一目标距离。Accompanying drawing 2 is the schematic diagram of the transmission electron microscope image of the sample in the specific embodiment of the present invention under different magnifications. 2 shows the transmission electron microscope images of the single crystal silicon sample at 190Kx magnification, 150Kx magnification, 120Kx magnification, ..., nKx magnification, wherein n is a positive integer less than 120. The following description will be made by taking 190Kx magnification as the first reference magnification, 150Kx magnification as the first target magnification, the number of the first through hole group is 2, and the cross section of the through hole is circular as an example. As shown in Fig. 2, under the magnification of 190Kx, measure the distance A 0 between the two through holes A and A' in the first through hole group in the first transmission electron microscope image, and use this distance as A first reference distance; at a magnification of 190Kx, measure the distance B 0 between the center of the circle of two through holes B and B' in another first through hole group in the first transmission electron microscope image, and calculate this distance As another first reference distance. Under the magnification of 150Kx, measure the distance A 1 between the centers of the two through holes A and A' in the first through hole group in the second transmission electron microscope image, and use this distance as a first target distance; At 150Kx magnification, measure the distance B 1 between the center of the two through holes B and B' in the other first through hole group in the second transmission electron microscope image, and use this distance as another first target distance.

步骤S15，根据多个所述第一参考距离与多个所述第一目标距离获取所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变信息。Step S15, acquiring the distortion of the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification according to multiple first reference distances and multiple first target distances information.

可选的，根据多个所述第一参考距离与多个所述第一目标距离获取所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变信息的具体步骤包括：Optionally, acquiring the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification according to multiple first reference distances and multiple first target distances The specific steps of distorting information include:

采用如下公式计算所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变度β1：The distortion degree β 1 of the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification is calculated by using the following formula:

β1＝(A0 B1/A1 B0-1)×100％；β 1 = (A 0 B 1 /A 1 B 0 -1)×100%;

式中，A0为所述第一透射电子显微镜图像中一个所述第一通孔组内的两个所述第一通孔之间的距离，B0为所述第一透射电子显微镜图像中另一个所述第一通孔组内的两个所述第一通孔之间的距离，A1为所述第二透射电子显微镜图像中一个所述第一通孔组内的两个所述第一通孔之间的距离，B1为所述第二透射电子显微镜图像中另一个所述第一通孔组内的两个所述第一通孔之间的距离。In the formula, A 0 is the distance between two first through holes in one first through hole group in the first transmission electron microscope image, and B 0 is the distance between the two first through holes in the first transmission electron microscope image. The distance between the two first through holes in the other first through hole group, A1 is the distance between the two first through hole groups in the second transmission electron microscope image. The distance between the first through holes, B 1 is the distance between the two first through holes in the other first through hole group in the second transmission electron microscope image.

举例来说，当从所述第一透射电子显微镜图像及所述第二透射电子显微镜图像中分别测得A0＝743.5nm、B0＝799.1nm、A1＝734.3nm、B1＝798.8nm时，根据上述公式可以计算得到β1＝1.21％，即所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变度为1.21％。采用上述方法，可以得到任意倍率下透射电子显微镜的相对图像畸变度。For example, when A 0 =743.5nm, B 0 =799.1nm, A 1 =734.3nm, B 1 =798.8nm are respectively measured from the first TEM image and the second TEM image , according to the above formula, β 1 =1.21% can be calculated, that is, the distortion degree of the TEM image at the first target magnification relative to the TEM image at the first reference magnification is 1.21%. By using the above method, the relative image distortion of the transmission electron microscope at any magnification can be obtained.

如图2所示，随着透射电子显微镜倍率的不断减小，所述第一通孔的尺寸不断缩小。当透射电子显微镜的倍率降低到一特定倍率以下时，可能会在量测所述第一通孔组内的两个所述第一通孔之间的距离时引入相对误差，从而可能导致特定倍率以下的图像畸变表征不准确。为了解决这一问题，可选的，所述透射电子显微镜图像畸变的表征方法还包括如下步骤：As shown in FIG. 2 , as the magnification of the transmission electron microscope decreases continuously, the size of the first through hole decreases continuously. When the magnification of the transmission electron microscope is reduced below a certain magnification, a relative error may be introduced when measuring the distance between the two first through holes in the first through hole group, which may result in a certain magnification The following image distortion characterizations are not accurate. In order to solve this problem, optionally, the characterization method of transmission electron microscope image distortion also includes the following steps:

判断所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变度β1是否小于或等于第二预设值，若是，则于所述样品中形成多个第二通孔组，每个所述第二通孔组包括两个贯穿所述样品的第二通孔，且任意两个所述第二通孔组内的两个所述第二通孔之间的连线方向互不相同，任一所述第二通孔组内的两个所述第二通孔之间的距离大于任一所述第一通孔组内的两个所述第一通孔之间的距离；Judging whether the distortion degree β1 of the transmission electron microscope image under the first target magnification relative to the transmission electron microscope image under the first reference magnification is less than or equal to a second preset value, and if so, in the sample Forming a plurality of second through hole groups, each of the second through hole groups includes two second through holes penetrating through the sample, and any two second through hole groups in any two second through hole groups The connection directions between the through holes are different from each other, and the distance between the two second through holes in any one of the second through hole groups is greater than the distance between the two second through holes in any one of the first through hole groups. The distance between the first through holes;

获取所述样品在所述第一目标倍率下的第四透射电子显微镜图像；acquiring a fourth transmission electron microscope image of the sample at the first target magnification;

获取所述第四透射电子显微镜图像中每一第二通孔组内的两个所述第二通孔之间的第二参考距离；acquiring a second reference distance between two second through holes in each second through hole group in the fourth transmission electron microscope image;

获取所述样品在一待表征的第二目标倍率下的第五透射电子显微镜图像，所述第二目标倍率低于所述第一目标倍率；acquiring a fifth transmission electron microscope image of the sample at a second target magnification to be characterized, the second target magnification being lower than the first target magnification;

获取所述第五透射电子显微镜图像中每一第二通孔组内的两个所述第二通孔之间的第二目标距离；acquiring a second target distance between two second through holes in each second through hole group in the fifth transmission electron microscope image;

根据多个所述第二参考距离与多个所述第二目标距离获取所述第二目标倍率下的透射电子显微镜图像相对于所述第一目标倍率下的透射电子显微镜图像的畸变信息。The distortion information of the transmission electron microscope image under the second target magnification relative to the transmission electron microscope image under the first target magnification is acquired according to the multiple second reference distances and the multiple second target distances.

可选的，所述第二预设值为1％。Optionally, the second preset value is 1%.

附图3是本发明具体实施方式中第二通孔组与第一通孔组的示意图。具体来说，可以从以所述第一参考倍率(例如190Kx)为基准得到的多个不同的第一目标倍率(例如150Kx、120Kx等)下的图像畸变度中，选择一畸变度小于1％的第一目标倍率作为后续低倍率下图像畸变度表征的参考基准。采用与以所述第一参考倍率为基准的方法类似，重新形成多个所述第二通孔组，且任一所述第二通孔组内的两个所述第二通孔之间的距离大于任一所述第一通孔组内的两个所述第一通孔之间的距离。例如，如图3所示，在选定的所述第一目标倍率下的所述第四透射电子显微镜图像中，一个所述第二通孔组中的两个所述第二通孔C、C’圆心之间的距离为C0、另一个所述的第二通孔组中的两个所述第二通孔D、D’圆心之间的距离为D0，且C0、D0均大于A0、B0。Figure 3 is a schematic diagram of the second through hole group and the first through hole group in a specific embodiment of the present invention. Specifically, it is possible to select a degree of distortion less than 1% from the image distortion degrees obtained under a plurality of different first target magnifications (such as 150Kx, 120Kx, etc.) based on the first reference magnification (such as 190Kx) The first target magnification is used as the reference benchmark for the subsequent characterization of image distortion at low magnifications. Using a method similar to that based on the first reference magnification, a plurality of the second through-hole groups are re-formed, and the distance between the two second through-holes in any one of the second through-hole groups The distance is greater than the distance between two first through holes in any one of the first through hole groups. For example, as shown in FIG. 3 , in the fourth transmission electron microscope image at the selected first target magnification, two of the second through holes C, C, The distance between the circle centers of C' is C 0 , the distance between the circle centers of the two second through holes D and D' in the other second through hole group is D 0 , and C 0 , D 0 Both are greater than A 0 and B 0 .

在其他具体实施方式中，形成多个第一通孔组的具体步骤包括：In other specific implementation manners, the specific steps of forming a plurality of first through hole groups include:

根据所述第一参考倍率与待表征的所述第一目标倍率之间的比例关系，调整所述第一通孔组内的两个所述第一通孔之间的距离。According to the proportional relationship between the first reference magnification and the first target magnification to be characterized, the distance between the two first through holes in the first through hole group is adjusted.

具体来说，也可以在形成所述第一通孔组之前，通过分析所述第一参考倍率与待表征的所述第一目标倍率之间的比例关系，来确定所述第一通孔组内的两个所述第一通孔之间的距离，例如所述第一参考倍率与所述第一目标倍率之间的差值越大，则所述第一通孔组内的两个所述第一通孔之间的距离越大，一方面可以提高两个所述第一通孔之间距离量测的准确度；另一方面，后续还可以对低于所述第一目标倍率的所述第二目标倍率下的图像畸变情况进行表征，避免形成第二通孔组的工艺。Specifically, before forming the first through hole group, the first through hole group may be determined by analyzing the proportional relationship between the first reference magnification and the first target magnification to be characterized. The distance between the two first through holes in the group, for example, the greater the difference between the first reference magnification and the first target magnification, the two in the first through hole group The larger the distance between the first through holes, the accuracy of the distance measurement between the two first through holes can be improved on the one hand; Characterizing the image distortion under the second target magnification avoids the process of forming the second through hole group.

不仅如此，本具体实施方式还提供了一种透射电子显微镜图像畸变的表征装置。附图4是本发明具体实施方式中透射电子显微镜图像畸变的表征装置的结构框图。所述透射电子显微镜图像畸变的表征装置可以采用如图1-图3所示的方法对透射电子显微镜图像畸变情况进行表征。如图1-图4所示，本具体实施方式提供的透射电子显微镜的表征装置，包括：Not only that, but this specific embodiment also provides a device for characterizing image distortion of a transmission electron microscope. Figure 4 is a structural block diagram of a characterization device for transmission electron microscope image distortion in a specific embodiment of the present invention. The device for characterizing the distortion of the transmission electron microscope image can characterize the distortion of the transmission electron microscope image by using the method shown in FIGS. 1-3 . As shown in Figures 1-4, the characterization device of the transmission electron microscope provided in this specific embodiment includes:

获取模块40，用于获取一样品在一第一参考倍率下的第一透射电子显微镜图像、以及所述样品在一待表征的第一目标倍率下的第二透射电子显微镜图像，所述第一目标倍率低于所述第一参考倍率，所述样品中具有多个第一通孔组，每个所述第一通孔组包括两个贯穿所述样品的第一通孔，且任意两个所述第一通孔组内的两个所述第一通孔之间的连线方向互不相同；An acquisition module 40, configured to acquire a first transmission electron microscope image of a sample at a first reference magnification, and a second transmission electron microscope image of the sample at a first target magnification to be characterized, the first The target magnification is lower than the first reference magnification, the sample has a plurality of first through hole groups, each of the first through hole groups includes two first through holes penetrating the sample, and any two The connection directions between the two first through holes in the first through hole group are different from each other;

量测模块41，用于获取所述第一透射电子显微镜图像中每一第一通孔组内的两个所述第一通孔之间的第一参考距离、以及所述第二透射电子显微镜图像中每一第一通孔组内的两个所述第一通孔之间的第一目标距离；A measurement module 41, configured to acquire a first reference distance between two first through holes in each first through hole group in the first transmission electron microscope image, and a second transmission electron microscope a first target distance between the two first through holes in each first through hole group in the image;

分析模块42，用于根据多个所述第一参考距离与多个所述第一目标距离获取所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变信息。An analysis module 42, configured to acquire a transmission electron microscope image at the first target magnification according to a plurality of the first reference distances and a plurality of the first target distances relative to the transmission electron microscope image at the first reference magnification Image distortion information.

可选的，所述样品为单晶硅样品；所述获取模块40还用于获取所述单晶硅样品在所述第一参考倍率下的第三透射电子显微镜图像；Optionally, the sample is a single crystal silicon sample; the acquisition module 40 is also configured to acquire a third transmission electron microscope image of the single crystal silicon sample at the first reference magnification;

所述分析模块42还用于根据所述第三透射电子显微镜图像判断所述第一参考倍率下的透射电子显微镜图像的畸变度是否小于或等于第一预设值，若否，则对透射电子显微镜进行调试。The analysis module 42 is also used to judge whether the distortion degree of the transmission electron microscope image under the first reference magnification is less than or equal to the first preset value according to the third transmission electron microscope image; Microscope for debugging.

可选的，所述第三透射电子显微镜图像为所述单晶硅样品在[110]带轴下的图像；所述量测模块41还用于获取所述第三透射电子显微镜图像中(1-11)晶面间距d1和(-111)晶面间距d2；Optionally, the third transmission electron microscope image is an image of the single crystal silicon sample under the [110] band axis; the measurement module 41 is also used to acquire the third transmission electron microscope image (1 -11) interplanar spacing d 1 and (-111) interplanar spacing d 2 ;

所述分析模块42还用于采用如下公式计算所述第一参考倍率下的透射电子显微镜图像的畸变度β0：The analysis module 42 is also used to calculate the distortion degree β 0 of the transmission electron microscope image under the first reference magnification by using the following formula:

β0＝(d1/d2-1)×100％。β 0 =(d1/d2-1)×100%.

可选的，所述第一预设值为0.5％。Optionally, the first preset value is 0.5%.

可选的，所述第一通孔组的数量为2个，四个所述第一通孔围绕形成一四边形，每一所述第一通孔组内的两个所述第一通孔之间的连线为所述四边形的一条对角线。Optionally, the number of the first through hole group is 2, and the four first through holes surround a quadrangle, and each of the two first through hole groups in the first through hole group The connecting line between is a diagonal line of the quadrilateral.

可选的，所述量测模块41还用于获取所述第一透射电子显微镜图像中一个所述第一通孔组内的两个所述第一通孔之间的距离A0、所述第一透射电子显微镜图像中另一个所述第一通孔组内的两个所述第一通孔之间的距离B0、所述第二透射电子显微镜图像中一个所述第一通孔组内的两个所述第一通孔之间的距离A1、所述第二透射电子显微镜图像中另一个所述第一通孔组内的两个所述第一通孔之间的距离B1；Optionally, the measurement module 41 is further configured to obtain the distance A 0 , the distance between two first through holes in one first through hole group in the first transmission electron microscope image, The distance B 0 between the two first through holes in the other first through hole group in the first transmission electron microscope image, and the distance B 0 between one of the first through hole groups in the second transmission electron microscope image The distance A 1 between the two first through holes in the second TEM image, the distance B between the two first through holes in the other first through hole group 1 ;

所述分析模块42还用于采用如下公式计算所述第一目标倍率下的透射电子显微镜图像相对于所述第一参考倍率下的透射电子显微镜图像的畸变度β1：The analysis module 42 is also used to calculate the degree of distortion β1 of the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification by using the following formula:

β1＝(A0 B1/A1 B0-1)×100％。β 1 =(A 0 B 1 /A 1 B 0 −1)×100%.

本具体实施方式提供的透射电子显微镜图像畸变的表征方法及表征装置，通过在一样品中形成多个通孔组，且每一通孔组内包括两个贯穿所述样品的通孔，以一参考倍率下通孔组内两个通孔之间的距离作为参考值，将目标倍率下所述通孔组内两个通孔之间的目标距离与所述参考值进行比较，从而可以获得在低于所述参考倍率的目标倍率下的透射电子显微镜图像畸变情况，操作简单、便捷，为后续半导体结构在目标倍率下的量测提供了参考，从而有助于提高半导体结构量测的准确度和精确度。The characterization method and characterization device for transmission electron microscope image distortion provided in this specific embodiment form a plurality of through-hole groups in a sample, and each through-hole group includes two through-holes penetrating through the sample. The distance between the two through holes in the through hole group under the magnification is used as a reference value, and the target distance between the two through holes in the through hole group under the target magnification is compared with the reference value, so that it can be obtained at a low The image distortion of the transmission electron microscope at the target magnification of the reference magnification is simple and convenient to operate, and provides a reference for the subsequent measurement of the semiconductor structure at the target magnification, thereby helping to improve the accuracy and accuracy of the semiconductor structure measurement. Accuracy.

以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above is only a preferred embodiment of the present invention, it should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, some improvements and modifications can also be made, and these improvements and modifications should also be considered Be the protection scope of the present invention.

Claims (14)

1. A characterization method of transmission electron microscope image distortion is characterized by comprising the following steps:
providing a sample;
forming 2 first through hole groups, wherein each first through hole group comprises two first through holes penetrating through the sample, four first through holes surround to form a quadrangle, and a connecting line between the two first through holes in each first through hole group is a diagonal line of the quadrangle;
acquiring a first transmission electron microscope image of the sample at a first reference multiplying power and a second transmission electron microscope image at a first target multiplying power to be characterized, wherein the first target multiplying power is lower than the first reference multiplying power;
acquiring a first reference distance between two first through holes in each first through hole group in the first transmission electron microscope image and a first target distance between two first through holes in each first through hole group in the second transmission electron microscope image;
calculating a distortion degree beta of the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification using the following formula 1 ：
β 1 ＝(A 0 B 1 /A 1 B 0 -1)×100％；
In the formula, A 0 For one of said first transmission electron microscope imagesDistance between two first through holes in a group of through holes, B 0 Is the distance, A, between two first through holes in another first through hole group in the first transmission electron microscope image 1 Is the distance between two first through holes in one first through hole group in the second transmission electron microscope image, B 1 Is the distance between two of the first through holes in the other of the first through hole groups in the second transmission electron microscope image.
2. The method of characterizing transmission electron microscope image distortion according to claim 1, wherein the sample is a monocrystalline silicon sample; before forming a plurality of first through hole groups, the method further comprises the following steps:
acquiring a third transmission electron microscope image of the monocrystalline silicon sample under the first reference multiplying power;
and judging whether the distortion of the transmission electron microscope image under the first reference multiplying power is less than or equal to a first preset value or not according to the third transmission electron microscope image, and debugging the transmission electron microscope if the distortion of the transmission electron microscope image under the first reference multiplying power is not less than or equal to the first preset value.
3. The method for characterizing distortion of a transmission electron microscope image according to claim 2, wherein before determining whether the distortion of the transmission electron microscope image at the first reference magnification is less than or equal to a first predetermined value according to the third transmission electron microscope image, the method further comprises the following steps:
the third transmission electron microscope image is an image of the monocrystalline silicon sample under a [110] tape axis;
obtaining the (1-11) interplanar spacing d in the third transmission electron microscope image 1 And (-111) interplanar spacing d 2 And calculating the distortion degree beta of the transmission electron microscope image under the first reference multiplying power by adopting the following formula 0 ：
β 0 ＝(d 1 /d 2 -1)×100％。
4. The method of characterizing transmission electron microscope image distortion according to claim 2, wherein the first predetermined value is 0.5%.
5. The method of characterizing transmission electron microscope image distortion according to claim 1, wherein the step of forming a plurality of first via sets comprises:
and adjusting the distance between the two first through holes in the first through hole group according to the proportional relation between the first reference multiplying power and the first target multiplying power to be characterized.
6. The method of characterizing transmission electron microscope image distortion according to claim 1, wherein the step of forming a plurality of first via sets comprises:
and irradiating the sample by using a focused electron beam to form a plurality of first through hole groups.
7. The method for characterizing distortion of an image obtained by a transmission electron microscope according to claim 1, wherein the step of obtaining a first reference distance between two first through holes in each first through hole group in the first transmission electron microscope image comprises:
and acquiring the distance between the centers of the two first through holes in each first through hole group in the first transmission electron microscope image as the first reference distance.
8. The method of characterizing transmission electron microscope image distortion according to claim 1, further comprising the steps of:
judging the distortion degree beta of the transmission electron microscope image under the first target multiplying power relative to the transmission electron microscope image under the first reference multiplying power 1 Whether the second through hole group is smaller than or equal to a second preset value or not is judged, if yes, a plurality of second through hole groups are formed in the sample, each second through hole group comprises two second through holes penetrating through the sample, and any two second through holes are formed in the sampleThe connecting directions of the two second through holes in the through hole groups are different from each other, and the distance between the two second through holes in any one second through hole group is larger than the distance between the two first through holes in any one first through hole group;
acquiring a fourth transmission electron microscope image of the sample at the first target magnification;
acquiring a second reference distance between two second through holes in each second through hole group in the fourth transmission electron microscope image;
acquiring a fifth transmission electron microscope image of the sample under a second target magnification to be characterized, wherein the second target magnification is lower than the first target magnification;
acquiring a second target distance between two second through holes in each second through hole group in the fifth transmission electron microscope image;
and acquiring distortion information of the transmission electron microscope image under the second target multiplying power relative to the transmission electron microscope image under the first target multiplying power according to the plurality of second reference distances and the plurality of second target distances.
9. The method of characterizing transmission electron microscope image distortion according to claim 8, wherein the second predetermined value is 1%.
10. The method of characterizing transmission electron microscope image distortion according to claim 1, wherein the first reference magnification is a magnification greater than or equal to 190 Kx.
11. An apparatus for characterizing distortion in a transmission electron microscope image, comprising:
the device comprises an acquisition module, a storage module and a processing module, wherein the acquisition module is used for acquiring a first transmission electron microscope image of a sample at a first reference multiplying power and a second transmission electron microscope image of the sample at a first target multiplying power to be characterized, the first target multiplying power is lower than the first reference multiplying power, the sample is provided with 2 first through hole groups, each first through hole group comprises two first through holes penetrating through the sample, the four first through holes surround to form a quadrangle, and a connecting line between the two first through holes in each first through hole group is a diagonal line of the quadrangle;
a measuring module for obtaining a distance A between two first through holes in one first through hole group in the first transmission electron microscope image 0 A distance B between two first through holes in another first through hole group in the first transmission electron microscope image 0 A distance A between two first through holes in one first through hole group in the second transmission electron microscope image 1 A distance B between two first through holes in another first through hole group in the second transmission electron microscope image 1 ；
An analysis module for calculating a distortion degree beta of the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification by using the following formula 1 ：
β 1 ＝(A 0 B 1 /A 1 B 0 -1)×100％。
12. The apparatus for characterizing transmission electron microscope image distortion according to claim 11, wherein the sample is a monocrystalline silicon sample; the acquisition module is further used for acquiring a third transmission electron microscope image of the monocrystalline silicon sample under the first reference multiplying power;
and the analysis module is also used for judging whether the distortion degree of the transmission electron microscope image under the first reference multiplying power is less than or equal to a first preset value or not according to the third transmission electron microscope image, and if not, debugging the transmission electron microscope.
13. The apparatus of claim 12, wherein the third tem image is a tem imageThe monocrystalline silicon sample is [110]]Off-axis images; the measuring module is also used for acquiring the (1-11) interplanar spacing d in the third transmission electron microscope image 1 And (-111) interplanar spacing d 2 ；
The analysis module is also used for calculating the distortion degree beta of the transmission electron microscope image under the first reference multiplying power by adopting the following formula 0 ：
β 0 ＝(d 1 /d 2 -1)×100％。
14. A device for characterizing distortion of an image in a transmission electron microscope as claimed in claim 13, wherein the first predetermined value is 0.5%.
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