CN111029696B - Second-order filter based on miniaturized stacking of slow-wave substrate integrated groove gap waveguide - Google Patents
Second-order filter based on miniaturized stacking of slow-wave substrate integrated groove gap waveguide Download PDFInfo
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- 230000008878 coupling Effects 0.000 claims abstract description 12
- 238000010168 coupling process Methods 0.000 claims abstract description 12
- 238000005859 coupling reaction Methods 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims description 47
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- 230000000737 periodic effect Effects 0.000 claims description 8
- 238000004806 packaging method and process Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
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- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
本发明属于微波器件技术领域，公开了一种基于慢波基片集成槽间隙波导小型化堆叠二阶滤波器，包括：慢波结构、基片集成槽间隙波导谐振腔、耦合结构及微带‑间隙波导过渡结构。本发明的基片集成槽间隙波导通过引入慢波结构实现小型化，该慢波基片集成槽间隙波导与相同横向尺寸的基片集成槽间隙波导相比，截止频率降低了51.6％，减小了横向尺寸；与相同截止频率的基片集成槽间隙波导相比，相速度减小了64.8％，减小了纵向尺寸。基于所设计的慢波基片集成槽间隙波导的基础上设计的慢波基片集成槽间隙波导二阶滤波器通过堆叠技术进一步实现滤波器的小型化，与工作在相同频段的级联型基片集成槽间隙波导二阶滤波器相比，面积减小了81.3％。
The invention belongs to the technical field of microwave devices, and discloses a miniaturized stacked second-order filter based on a slow-wave substrate-integrated slot-gap waveguide, comprising: a slow-wave structure, a substrate-integrated slot-gap waveguide resonant cavity, a coupling structure, and a microstrip- Gap waveguide transition structure. The substrate-integrated slot-gap waveguide of the present invention realizes miniaturization by introducing a slow-wave structure. Compared with the substrate-integrated slot-gap waveguide of the same lateral size, the slow-wave substrate-integrated slot-gap waveguide has a cut-off frequency reduced by 51.6%, and the Compared with the substrate-integrated slot-gap waveguide with the same cutoff frequency, the phase velocity is reduced by 64.8%, and the longitudinal size is reduced. Based on the designed slow-wave substrate-integrated slot-gap waveguide, the slow-wave substrate-integrated slot-gap waveguide second-order filter further realizes the miniaturization of the filter through stacking technology, which is similar to the cascade-type base working in the same frequency band. Compared with the chip-integrated slot-gap waveguide second-order filter, the area is reduced by 81.3%.
Description
Technical Field
The invention belongs to the technical field of microwave devices, and particularly relates to a miniaturized stacked second-order filter based on a slow-wave substrate integrated groove gap waveguide.
Background
Currently, the closest prior art: the gap waveguide technology is used as a new electromagnetic transmission and shielding structure, has the characteristic of non-electric contact, and effectively reduces the problem of poor performance caused by poor electric contact of a circuit. The gap waveguide technology provides convenience in circuit packaging, circuit design, and antenna design due to the advantage of non-electrical contact. The gap waveguide technology comprises ridge gap waveguide, slot gap waveguide and inverted microstrip gap waveguide, and the slot gap waveguide technology is adopted in the invention. The filter is used as a vital component of a communication system, and at present, the implementation modes of the filter mainly include a microstrip filter, a SIW filter, a GW filter and the like; the slot gap waveguide filter in the GW filter is mainly designed based on the slot gap waveguide formed by the metalized pins, and has the defects of being not beneficial to integration, large in size and high in processing cost; therefore, the substrate integrated gap waveguide based on the planar PCB process is widely used. The planar structure has the advantages of low processing cost, small circuit area and high integration level. The second-order filter is designed based on the substrate integrated slot gap waveguide, but the filter still has the defect of larger size in the design and is not suitable for the requirement of miniaturization of the current communication system.
In summary, the problems of the prior art are as follows:
(1) the EBG structure adopted by the existing design of the slot gap waveguide filter is a metalized pin, so that the size is overlarge, the integration is not easy, and the cost is higher.
(2) The existing substrate integrated slot gap waveguide filter adopting the mushroom-type EBG structure is easy to integrate and low in cost, but has the defect of larger size in miniaturization application, and is not in line with the trend of miniaturization of a communication system.
The difficulty of solving the technical problems is as follows: how to effectively realize the miniaturization of the substrate integrated slot gap waveguide filter and the coupling before the cavity of the substrate integrated slot gap waveguide filter, so that the performance of the filter is good becomes a critical problem, and researches have been made on the improvement of the circuit performance of the filter through a slow wave structure and a stacking structure, the size reduction and the application of the filter in the miniaturization design of the SIW filter;
the significance of solving the technical problems is as follows: on the premise of designing a waveguide filter based on a substrate slot gap, how to realize miniaturization becomes a crucial problem. Research has been conducted to improve circuit performance by loading a slow-wave structure, reduce the size, apply to SIW miniaturization design, and also realize miniaturization of a filter by using a stacking technique. The invention provides a small-sized stacked filter based on a slow-wave substrate integrated slot gap waveguide, which realizes the miniaturization of the substrate slot gap waveguide filter, meets the trend of miniaturization of a communication system and enables the substrate integrated slot gap waveguide to be widely applied.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a miniaturized stacked second-order filter based on a slow-wave substrate integrated slot gap waveguide.
The invention is realized in such a way that a miniaturized stacked second-order filter based on a slow wave substrate integrated slot gap waveguide is provided with: the four layers of dielectric substrates are respectively an upper layer dielectric plate, an upper layer gap layer, a lower layer gap layer and a lower layer dielectric plate;
the grooves of the upper dielectric plate and the lower dielectric plate are of slow wave structures;
the right side of the upper surface of the upper gap layer and the left side of the lower surface of the lower gap layer are respectively loaded with an upper microstrip-gap waveguide transition structure and a lower microstrip-gap waveguide transition structure;
the third metal floor on the lower surface of the upper clearance layer and the fourth metal floor on the upper surface of the lower clearance layer are connected to form a common metal floor, and a coupling gap is etched on the common metal floor to form a coupling structure;
the upper side and the lower side of one shared metal floor are respectively provided with an upper layer slow wave substrate integrated groove gap waveguide resonant cavity and a lower layer slow wave substrate integrated groove gap waveguide resonant cavity;
the mushroom-type EBG structures are loaded on two sides of the long edges of the upper dielectric plate and the lower dielectric plate respectively, and the metal floor is arranged on the upper surface of the upper dielectric plate, the lower surface of the upper clearance layer, the upper surface of the lower clearance layer and the lower surface of the lower dielectric plate.
Further, the slow wave structure for realizing miniaturization is to load periodic metalized through holes in grooves of a lower-layer dielectric plate and an upper-layer dielectric plate.
Furthermore, the upper layer slow wave substrate integrated groove gap waveguide resonant cavity is formed by embedding three first metalized through holes in the upper layer medium plate and the gap layer left side waveguide groove, the upper layer micro-strip-gap waveguide transition structure is formed by embedding two second metalized through holes in the upper layer medium plate and the upper layer gap layer right side, the lower layer slow wave substrate integrated groove gap waveguide resonant cavity is formed by embedding three third metalized through holes in the lower layer gap layer and the lower layer medium plate right side waveguide groove, and the lower layer micro-strip-gap waveguide transition structure is formed by embedding two fourth metalized through holes in the lower layer gap layer and the lower layer medium plate left side.
Furthermore, a third metal floor on the lower surface of the upper clearance layer and a fourth metal floor on the upper surface of the lower clearance layer are connected to form a metal floor, and a coupling gap is etched on the metal floor.
Furthermore, the second-order filter is formed by stacking two slow-wave substrate integrated slot gap waveguide resonant cavities.
The invention also aims to provide an application of the miniaturized stacked second-order filter based on the slow-wave substrate integrated groove gap waveguide in a microwave device.
The invention also aims to provide an application of the miniaturized stacked second-order filter based on the slow-wave substrate integrated groove gap waveguide in the gap waveguide technology.
The invention also aims to provide an application of the miniaturized stacked second-order filter based on the slow-wave substrate integrated slot gap waveguide in circuit packaging.
The invention also aims to provide an application of the miniaturized stacked second-order filter based on the slow-wave substrate integrated slot gap waveguide in circuit design.
The invention further aims to provide an application of the miniaturized stacked second-order filter based on the slow-wave substrate integrated slot gap waveguide in antenna design.
In summary, the advantages and positive effects of the invention are: the miniaturized stacked second-order filter based on the slow-wave substrate integrated slot gap waveguide comprises a slow-wave structure, a substrate integrated slot gap waveguide resonant cavity, a coupling structure and a microstrip-gap waveguide transition structure. The slow wave structure is composed of three rows of periodic metalized through holes, the substrate integrated slot gap waveguide resonant cavity is formed by embedding two metalized through holes in a feed end of a substrate integrated slot gap waveguide and loading three metalized through holes at the tail end of a waveguide corresponding to the feed end, the coupling structure is formed by etching a gap on a floor, and the microstrip-gap waveguide transition structure is in transition by adopting a graded microstrip line. The miniaturized stacked second-order filter based on the slow-wave substrate integrated groove gap waveguide adopts a slow-wave structure and a stacking technology, and effectively realizes the miniaturization of the substrate integrated groove gap waveguide filter. The slow wave structure is formed by uniformly loading periodic metalized through holes on a bottom layer dielectric slab. The formation of the substrate integrated groove gap waveguide resonant cavity is realized by embedding five inductive through holes in the slow wave substrate integrated groove gap waveguide, and the coupling structure is formed by etching gaps on a common metal floor formed by connecting a third metal floor and a fourth metal floor.
The invention adopts the slow wave substrate integrated slot gap waveguide structure, effectively reduces the size of the filter, and adopts a stacked structure in order to further realize the miniaturization of the filter. In the design of the filter, the coupling structure is formed by etching a gap on a metal floor, so that the coupling structure has a great design degree and can well meet the performance requirement of the filter. The invention provides a second-order filter based on the miniaturization and stacking of the slow-wave substrate integrated slot gap waveguide for the first time, and effectively realizes the miniaturization of the substrate integrated slot gap waveguide filter. As shown in fig. 2, the area is reduced by 81.3% compared to a substrate integrated slot gap waveguide second order filter operating at the same center frequency.
Drawings
FIG. 1 is a schematic structural diagram of a miniaturized stacked second-order filter based on a slow-wave substrate integrated slot gap waveguide provided by an embodiment of the invention;
in the figure: 1. an upper dielectric plate; 2. an upper gap layer; 3. a lower gap layer; 4. a lower dielectric plate; 5. an upper microstrip-gap waveguide transition structure; 6. a lower layer microstrip-gap waveguide transition structure; 7. pasting an upper EBG structure; 8. pasting a lower-layer EBG structure; 9. a first metal floor; 10. a second metal floor; 11. a third metal floor; 12. a fourth metal floor; 13. a third metallized via; 14. a fourth metallized via; 15. a first metallized via; 16. a second metallized via; 17. an upper slow wave structure; 18. a lower layer slow wave structure; 19. a middle gap; 20. a y-axis symmetric slit.
In the figure: (a) the first metal floor grounding plate is positioned on the upper surface of the upper-layer dielectric plate, and the transparency of the first metal floor is set to be 1 for better clarity;
in the figure: (b) is an upper gap layer, wherein the upper microstrip-gap waveguide transition structure is positioned at the right side of the upper surface of the upper gap layer, a third metal floor is positioned at the lower surface of the upper gap layer, and the upper gap layer comprises three first metalized through holes and two second metalized through holes
In the figure: (c) the lower gap layer is arranged, wherein the lower microstrip-gap waveguide structure is positioned on the left side of the lower surface of the lower gap layer, the fourth metal floor is positioned on the upper surface of the lower gap layer, the size of the fourth metal floor is shown as a dark region in the figure, and the lower gap layer comprises three third metalized through holes and two fourth metalized through holes;
in the figure: (d) is a lower dielectric slab, including a slow wave structure, an EBG structure and a second metal floor.
In the figure: (e) is a side view of the designed second-order filter stacked in a miniaturized way by the slow wave substrate integrated slot gap waveguide;
in the figure: (f) the structure diagram of the designed slow wave substrate integrated slot gap waveguide miniaturized stacked second-order filter.
FIG. 2 is a schematic diagram comparing the reflection coefficient characteristic curves of a substrate integrated slot gap waveguide loaded slow wave structure and an unloaded slow wave structure provided by the embodiment of the invention.
FIG. 3 is a diagram illustrating a comparison of slow-wave factors (phase velocities) of a substrate-integrated slot-gap waveguide-loaded slow-wave structure and an unloaded slow-wave structure according to an embodiment of the present invention.
Fig. 4 is a comparison graph of S parameters of a miniaturized stacked second-order filter based on a slow-wave substrate integrated slot gap waveguide and a substrate integrated slot gap waveguide cascaded second-order filter according to an embodiment of the present invention;
in the figure: (a) the slow wave substrate integrated slot gap waveguide is miniaturized and stacked to form a second-order filter; (b) a substrate integrated slot gap waveguide second-order filter is provided.
Fig. 5 is a comparison diagram of the structural dimensions of a miniaturized stacked second-order filter based on a slow-wave substrate integrated slot gap waveguide and a substrate integrated slot gap waveguide cascaded second-order filter provided by an embodiment of the present invention;
in the figure: (a) a top view of a second-order filter stacked in a miniaturized manner on a slow-wave substrate integrated slot gap waveguide; (b) and (4) a top view of the substrate integrated slot gap waveguide second-order filter.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Aiming at the problems in the prior art, the invention provides a miniaturized stacked second-order filter based on a slow-wave substrate integrated slot gap waveguide, and the invention is described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the miniaturized stacked second-order filter based on the slow-wave substrate integrated slot gap waveguide provided by the embodiment of the present invention includes: four layers of dielectric plates: an upper dielectric plate 1, an upper gap layer 2, a lower gap layer 3 and a lower dielectric plate 4; mushroom-shaped EBG structure upper-layer EBG structure patches 7 and lower-layer EBG structure patches 8 which are symmetrical about a central slot are loaded on the lower surface of the upper-layer dielectric slab 1 and the two sides of the upper surface of the lower-layer dielectric slab 4 respectively; the upper surface of the upper-layer dielectric slab 1 is provided with a first metal floor 9, three rows of upper-layer slow-wave structures 17 of periodic metalized through hole-slow-wave structures are loaded in the grooves of the substrate integrated groove gap waveguide of the upper-layer dielectric slab 1, the upper-layer gap layer 2 is positioned below the upper-layer dielectric slab 1, and the lower surface of the upper-layer gap layer 2 is provided with a third metal floor 11; the upper surface of the lower clearance layer 3 is a fourth metal floor 12, a lower dielectric plate 4 is positioned below the lower clearance layer 3, three rows of lower slow-wave structures 18 of periodic metalized via hole-slow-wave structures are loaded in the groove of the substrate integrated groove clearance waveguide of the lower dielectric plate 4, and a second metal floor 10 is positioned on the lower surface of the lower dielectric plate 4; the right side of the upper surface of the upper gap layer 2 and the left side of the lower surface of the lower gap layer 3 are respectively loaded with an upper microstrip-gap waveguide transition structure 5 and a lower microstrip-gap waveguide transition structure 6; three first metallized through holes 15 are embedded in the waveguide grooves on the left sides of the upper dielectric plate 1 and the upper gap layer 2; two second metallized through holes 16 are embedded in the right waveguide grooves of the upper dielectric plate 1 and the upper gap layer 2 and positioned at two sides of the upper microstrip-gap waveguide transition structure 5; three third metallized through holes 13 are embedded in the right waveguide grooves of the lower clearance layer 3 and the lower dielectric plate 4, and two fourth metallized through holes 14 are embedded in the left waveguide grooves of the lower clearance layer 3 and the lower dielectric plate 4 and positioned at two sides of the lower microstrip-clearance waveguide transition structure 6. The third metal floor 11 on the lower surface of the upper gap layer 2 and the fourth metal floor 12 on the upper surface of the lower gap layer 3 are connected into a metal floor, a middle gap 19 is etched in the center of the metal floor, and two symmetrical gaps are symmetrically etched on two sides of the middle gap 19 relative to the y axis and are named as y-axis symmetrical gaps 20.
The dielectric substrate adopts Rogers 5880 material with the relative dielectric constant of 2.2, the loss tangent is only 0.0009, the thickness of the dielectric substrates 2 and 3 is 0.127mm, the length is 10.2mm, and the width is 13.1 mm; the dielectric substrates 1 and 4 had a thickness of 0.787mm, a length of 7.2mm and a width of 13.1 mm. The metal patches used to construct the EBG structure were 2.4mm by 2.1mm in size, and the metal vias were 0.3mm in diameter. The diameter of the metalized through hole forming the slow wave structure is 0.7mm, and the center distance S between two adjacent metalized through holes in the y-axis direction11.3mm, and the center distance S between two adjacent metallized through holes in the x-axis direction2Is 1.25 mm; the radius of the circular ring on the metalized through hole of the slow wave structure is 0.12 mm. The length of the metal floor 11 is 10.2mm, and the width is 13.1 mm; the length of the fourth metal floor 12 is 3mm, and the width is 13.1 mm; three third metallized through holes 13 embedded in the grooves of the lower dielectric plate and the lower clearance layer, and three metallized through holes 15 embedded in the upper dielectric plate and the upper clearance layer, wherein the diameter of the three metallized through holes is 0.7mm, and the middle interval of the three metallized through holes is 1.2 mm; two fourth metallized through holes 14 embedded in the slots of the lower dielectric plate 4 and the lower gap layer and two gold second metallized through holes 16 embedded in the upper dielectric plate 1 and the upper gap layer 2, the diameter of each fourth metallized through hole is 0.6mm, and the offset from the center position of the feed end is1.3 mm; the characteristic impedance of the microstrip line used for feeding of the upper layer microstrip-gap waveguide transition structure 5 and the lower layer microstrip-gap waveguide transition structure 6 is 0.4mm of the width of a feed end with 50 omega, and the width of the tail end is 1.2 mm; the length of the middle gap 19 is 0.66mm, and the width is 0.60 mm; the y-axis symmetric slit 20 has a length of 0.86mm, a width of 0.3mm, and an offset from the center of the intermediate slit 19 of 2.2 mm.
The following will describe the technical effects of the present invention in detail with reference to the drawings.
Fig. 2 and fig. 3 are schematic diagrams illustrating a comparison between a reflection coefficient characteristic curve and a slow-wave factor characteristic curve of a substrate integrated slot gap waveguide loaded slow-wave structure and an unloaded slow-wave structure according to an embodiment of the present invention. As can be seen from fig. 2, the cut-off frequency of the substrate integrated slot gap waveguide of the embodiment of the present invention is reduced from 20GHz to 9.68GHz, and the cut-off frequency is reduced by 51.6% at the same transverse waveguide dimension; as can be seen from FIG. 3, after the metallized via hole slow wave structure is loaded, the normalized phase velocity is reduced by 64.8%, and compared with the traditional substrate integrated slot gap waveguide transmission line, the longitudinal dimension of the waveguide is reduced by 64.8% under the same cut-off frequency
Fig. 4 and 5 are schematic diagrams respectively comparing reflection coefficient characteristic curves and top view structure dimensions of the slow-wave substrate integrated slot gap waveguide miniaturized stacked second-order filter and the substrate integrated slot gap waveguide second-order filter according to the embodiment of the invention. As can be seen from fig. 4, the central operating frequency of the second-order filter of the gap waveguide in the embodiment of the present invention is approximately the same as the central operating frequency of the second-order filter of the substrate integrated slot, the central frequency of the low frequency band is 11.8GHz, and the central frequency of the high frequency band is 18.0GHz and 18.5GHz, respectively; as can be seen from fig. 5, the area of the second order filter of the miniaturized stacked second order filter of the slow wave substrate integrated slot gap waveguide is reduced by 81.3% compared with the substrate integrated slot gap waveguide.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
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| CN111641012B (en) * | 2020-05-15 | 2021-05-14 | 南通大学 | A substrate-integrated dielectric resonator filter |
| CN111540990B (en) * | 2020-05-18 | 2021-03-09 | 中国人民解放军海军工程大学 | Microwave frequency-selecting device based on waveguide |
| CN111600103B (en) * | 2020-05-25 | 2021-07-20 | 北京邮电大学 | A filter based on printed ridge-gap waveguide |
| CN112952313B (en) * | 2021-01-27 | 2021-10-01 | 中国人民解放军海军工程大学 | A microwave frequency selective device based on band gap closed loop |
| CN113131164B (en) * | 2021-03-07 | 2022-01-14 | 西安电子科技大学 | Suspension line gap waveguide based on stacked mushroom type electromagnetic band gap structure package |
| CN114335944B (en) * | 2021-12-08 | 2023-03-24 | 网络通信与安全紫金山实验室 | Gap waveguide with band-pass filtering function |
| CN114171864A (en) * | 2021-12-14 | 2022-03-11 | 南京邮电大学 | Multilayer filter based on substrate-integrated slow-wave empty waveguide |
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