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CN111048584B - A kind of high linearity gallium nitride HBT radio frequency power device and preparation method thereof - Google Patents

A kind of high linearity gallium nitride HBT radio frequency power device and preparation method thereof Download PDF

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CN111048584B
CN111048584B CN201911334848.7A CN201911334848A CN111048584B CN 111048584 B CN111048584 B CN 111048584B CN 201911334848 A CN201911334848 A CN 201911334848A CN 111048584 B CN111048584 B CN 111048584B
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gallium nitride
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周德金
冯黎
李晓茜
张卫
卢红亮
黄伟
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Fudan University
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Abstract

本发明提供了一种高线性氮化镓HBT射频功率器件及其制备方法，属于射频功率器件领域。本发明提供了一种高线性氮化镓HBT射频功率器件，包括：外延材料层；次集电层；集电层；氮化硅层；集电极接触孔金属层；P‑氮化镓基层；发射极层；P型多晶硅层；以及基极金属层。因为本发明在P‑GaN非本征基区采用成熟的P型Si半导体实现自镇流结构，同时利用多晶硅互连线Rb为镇流电阻，采用了多晶硅互连线有效地缩短非本征基区区域。所以，本发明可以利用这个负反馈结构降低器件I‑V中的非线性分量，能够降低RC延迟时间，明显提高器件高的fT、fmax高频参数。

Figure 201911334848

The invention provides a high linearity gallium nitride HBT radio frequency power device and a preparation method thereof, belonging to the field of radio frequency power devices. The invention provides a high linearity gallium nitride HBT radio frequency power device, comprising: an epitaxial material layer; a sub-collector layer; a collector layer; a silicon nitride layer; a collector contact hole metal layer; an emitter layer; a P-type polysilicon layer; and a base metal layer. Because the present invention adopts mature P-type Si semiconductor in the P-GaN extrinsic base region to realize the self-ballast structure, and at the same time uses the polysilicon interconnection line R b as the ballast resistance, the polysilicon interconnection line is used to effectively shorten the extrinsic base area. Therefore, the present invention can use this negative feedback structure to reduce the nonlinear component in the device I-V, can reduce the RC delay time, and obviously improve the high frequency parameters of f T and f max of the device.

Figure 201911334848

Description

High-linearity gallium nitride HBT radio frequency power device and preparation method thereof
Technical Field
The invention relates to a radio frequency power device, in particular to a high-linearity gallium nitride HBT radio frequency power device and a preparation method thereof, and belongs to the field of radio frequency power devices.
Background
The GaN third generation semiconductor has wider forbidden band width (3.4eV), high breakdown field strength (3MV/cm) and very high electron mobility (1500 cm) at room temperature2V · s), extremely high peak electron velocity (3 × 10)7cm/s) and high two-dimensional electron gas concentration (2X 10)13cm2) AlGaN/GaN HEMTs power devices are gradually replacing RF-LDMOS and GaAs power devices and becoming the first choice microwave power devices of T/R components in phased array radars. On the other hand, with the urgent need of 5G communication for broadband transmission of massive data, AlGaN/GaN HEMTs devices operating in a high frequency band and having high power density advantage will be greatly developed in civil wireless communication, but the former also faces the difficulty of high linear transmission of high frequency modulation signals and the like in 5G communication application and needs to break through.
In recent years, researchers focus on intensive research on high-linearity radio-frequency power devices from the aspects of materials, devices, applications and the like of AlGaN/GaN HEMTs. In terms of materials, the transconductance G is linearized by changing Al components to form a master-slave composite channelm. Researchers have also proposed new AlGaN/GaN HEMTs based on FinFET structures to address current saturation R between source and gateaccess,gsA major problem, but the fin structure causes degradation of the rf power performance.
In addition, for a long time, bipolar devices have the advantages of good linearity, high current gain and the like, and are always the main device structures of silicon-based microwave power devices, and with the development of microwave device technologies, surface-type microwave power devices conforming to moore's law become a trend, and are used for developing microwave AlGaN/GaN HEMTs power devices for 4G-LTE application RF-LDMOS and phased array radar application, but the device structures have the technical difficulty that the power density is not favorably improved.
In recent years, AlGaN/GaN HEMT microwave power devices have been successfully applied to phased arrays, but as the devices are gradually exposed to 5G applications, the devices have the disadvantages of low linearity, no coverage of mobile terminals by applications, and the like.
Disclosure of Invention
The present invention is made to solve the above problems, and an object of the present invention is to provide a high linearity gallium nitride HBT radio frequency power device in which a self-ballasting structure is realized by using a mature P-type Si semiconductor in a P-GaN extrinsic base region, and a method for manufacturing the same.
The invention provides a high-linearity gallium nitride HBT radio frequency power device, which is characterized by comprising the following components: the epitaxial material layer is made of non-uniformly doped GaN on Sapphire; a sub-collector layer disposed above the epitaxial material layer and doped with n+-a GaN material; the collector layer is arranged above the secondary collector layer and is made of unintentionally doped GaN materials; the silicon nitride layer is arranged above the collector layer and is provided with a pair of collector contact holes symmetrically arranged along the central line of the silicon nitride layer and a pair of epitaxial windows symmetrically arranged on the inner sides of the pair of collector contact holes along the central line of the silicon nitride layer; the collector contact hole metal layer is filled in the collector contact hole; the P-gallium nitride base layer is adaptive to the size of the epitaxial window and is filled in the epitaxial window; an emitter layer disposed above the P-GaN base layer and including N arranged sequentially from bottom to top+-an AlGaN emitter layer and an emitter metal layer; a P-type polysilicon layer disposed over the silicon nitride layer between the pair of epitaxial windows; and a base metal layer disposed over the P-type polysilicon layer.
In the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the high-linearity gallium nitride HBT radio-frequency power device also has the following characteristics: wherein the thickness of the epitaxial material layer is 1.5-2.5 μm, the thickness of the secondary collector layer is 0.5-1.5 μm, the thickness of the collector layer is 0.25-0.75 μm, the line width of the epitaxial window is 0.5-1.5 μm, and P-nitrogen is addedThe thickness of the gallium nitride base layer is 60nm-80nm, N+-the thickness of the AlGaN emitter layer is 40nm-60nm, the line width of the emitter layer is 0.25 μm-0.75 μm, and the thickness of the P-type polycrystalline silicon layer is 0.1 μm-0.2 μm.
In the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the high-linearity gallium nitride HBT radio-frequency power device also has the following characteristics: the emitter metal layer comprises a titanium layer with the thickness of 15nm-25nm, an aluminum layer with the thickness of 110nm-130nm, a nickel layer with the thickness of 50nm-60nm and a gold layer with the thickness of 60nm-70nm which are arranged in sequence from bottom to top.
In the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the high-linearity gallium nitride HBT radio-frequency power device also has the following characteristics: the collector contact hole metal layer comprises a titanium layer with the thickness of 15nm-25nm and an aluminum layer with the thickness of 110nm-130nm, which are arranged in sequence from bottom to top.
In the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the high-linearity gallium nitride HBT radio-frequency power device also has the following characteristics: wherein, the base metal lead layer comprises a titanium layer with the thickness of 15nm-25nm and an aluminum layer with the thickness of 110nm-130nm which are arranged in sequence from bottom to top.
The invention also provides a preparation method of the high-linearity gallium nitride HBT radio-frequency power device, which is characterized in that: the method comprises the following steps: s1, sequentially depositing highly doped n on the non-uniformly doped GaN on Sapphire by using metal organic compound chemical vapor deposition method+-GaN and unintentionally doped GaN, forming in sequence a secondary collector layer and a collector layer; s2, depositing SiN on the collector layer by using a plasma enhanced chemical vapor deposition method to form a silicon nitride layer; s3, etching the surface of the silicon nitride layer by using a buffer fluoride etching solution to form an epitaxial window; s4, sequentially extending P-GaN and N in the extension window+AlGaN, thereby forming a P-GaN base layer and N+-an AlGaN emitter layer; s5, forming a silicon nitride layer and N+Depositing metal above the AlGaN emitter layer, photoetching, opening an emitter window, etching the metal and the silicon nitride layer by adopting a reactive ion etching method, and etching and stopping on the surface of the P-gallium nitride base layer to form an emitter; s6, carrying out rapid thermal treatment, forming ohmic contact of the emitter, carrying out photoetching, and opening an outer base region window; s7, sputtering P-type alpha-Si by physical vapor deposition, stripping and removing photoresist, annealing in a furnace, and converting the P-type alpha-Si into P-type polycrystalline silicon to form a P-type polycrystalline silicon layer; s8, photoetching the SiN dielectric layer to the upper surface of the collector layer to form a collector contact hole, and photoetching the SiN dielectric layer to the upper surface of the P-type polycrystalline silicon to form a base metal hole; s9, filling the collector contact hole and the base metal hole with electron beam evaporation metal to form a collector contact hole metal layer and a base metal layer respectively; and S10, stripping and removing the photoresist, and performing rapid thermal annealing to form ohmic contact between the collector contact hole metal layer and the base metal layer, thereby obtaining the high-linearity gallium nitride HBT radio-frequency power device.
In the preparation method of the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the preparation method also has the following characteristics: wherein a high doping n is deposited+Doping concentration of-GaN is 2.5X 1018cm-3-3.5×1018cm-3。
In the preparation method of the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the preparation method also has the following characteristics: wherein the doping concentration of the P-type alpha-Si is 0.5 multiplied by 1020cm-3-1.5 ×1020cm-3。
In the preparation method of the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the preparation method also has the following characteristics: wherein, in the step S7, the furnace annealing temperature is 800-820 ℃, and the furnace annealing time is 20-30 min.
In the preparation method of the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the preparation method also has the following characteristics: wherein the temperature of the rapid thermal annealing in the step S10 is 800-850 ℃, and the time of the rapid thermal annealing is 45-55S.
Action and Effect of the invention
According to the high-linearity gallium nitride HBT radio-frequency power device, the P-GaN extrinsic base region adopts a mature P-type Si semiconductor to realize a self-ballasting structure, and a polycrystalline silicon interconnection line R is utilized at the same timebIs a ballast resistor. Therefore, the present invention can reduce the non-linear component in the device I-V using this negative feedback structure.
According to the bookAccording to the high-linearity gallium nitride HBT radio-frequency power device, the extrinsic base region is effectively shortened by adopting the polycrystalline silicon interconnection line, so that the RC delay time can be reduced, and the f height of the device is obviously increasedT、fmaxA high frequency parameter.
Drawings
Fig. 1 is a schematic structural diagram of a high linearity HBT radio frequency power device in an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an intermediate product obtained in step 1 of the method for manufacturing a high-linearity gallium nitride HBT radio-frequency power device in the embodiment of the present invention;
fig. 3 is a schematic structural diagram of an intermediate product obtained in step 2 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
fig. 4 is a schematic structural diagram of an intermediate product obtained in step 3 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
fig. 5 is a schematic structural diagram of an intermediate product obtained in step 4 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
fig. 6 is a schematic structural diagram of an intermediate product obtained in step 5 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
fig. 7 is a schematic structural diagram of an intermediate product obtained in step 6 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
fig. 8 is a schematic structural diagram of an intermediate product obtained in step 7 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
fig. 9 is a schematic structural diagram of an intermediate product obtained in step 8 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
figure 10 is a schematic diagram of the application of a high linearity HBT radio frequency power device in a circuit in an embodiment of the present invention;
fig. 11 is a schematic diagram of the energy level of the high linearity HBT radio frequency power device along the X-axis direction in the embodiment of the present invention.
Detailed Description
In order to make the technical means, the creation features, the achievement purposes and the effects of the invention easy to understand, the invention is specifically described below by combining the embodiment and the attached drawings.
< example >
Fig. 1 is a schematic structural diagram of a high linearity HBT radio frequency power device in an embodiment of the present invention.
As shown in fig. 1, the high linearity HBT radio frequency power device comprises: the epitaxial material layer, the secondary collector layer, the silicon nitride layer, the collector contact hole metal layer, the P-gallium nitride base layer, the emitter layer, the P-type polycrystalline silicon layer and the base metal layer.
The epitaxial material layer was made of non-uniformly doped GaN on Sapphire with a thickness of 2 μm.
A subcollector layer (Subcollerctor layer) disposed over and in contact with the epitaxial material layer and formed of highly doped n+-GaN material with a thickness of 1 μm. Deposition of highly doped n+Doping concentration of GaN 3X 1018cm-3。
The collector layer (collector layer) is arranged above the secondary collector layer, is in contact with the secondary collector layer, is made of an unintentionally doped GaN material, and has a thickness of 0.5 μm.
The silicon nitride layer is arranged above and in contact with the collector layer and is provided with a pair of collector contact holes symmetrically arranged along the center line of the silicon nitride layer and a pair of epitaxial windows symmetrically arranged on the inner sides of the pair of collector contact holes along the center line of the silicon nitride layer. Wherein the line width L of the epitaxial windowbase＝1.0μm。
And the collector contact hole metal layer is filled in the collector contact hole and has the thickness of 140nm, and consists of a titanium layer with the thickness of 20nm and an aluminum layer with the thickness of 120nm which are sequentially arranged from bottom to top.
The P-gallium nitride base layer is matched with the size of the epitaxial window and is filled in the epitaxial window, the thickness is 70nm, and the line width is 1 mu m.
The emitter layer comprises N arranged from bottom to top+-an AlGaN emitter layer and an emitter metal layer,disposed over the P-GaN base layer, wherein N+-the AlGaN emitter layer is in contact with the P-gallium nitride base layer. Line width L of emitter layeremitter＝0.5μm。
N+-AlGaN emitter layer consisting of N+AlGaN material, arranged above and in contact with the P-GaN base layer, having a thickness of 50nm and a line width of 0.5 μm, and located at the center of the emitting base layer.
An emitter metal layer arranged on N+-AlGaN emitter layer, with N+An AlGaN emitter layer contact, having a thickness of 260nm and a line width of 0.5 μm, consisting of, from bottom to top, a titanium layer having a thickness of 20nm, an aluminum layer having a thickness of 120nm, a nickel layer having a thickness of 55nm, and a gold layer having a thickness of 65 nm.
The P-type polysilicon layer is disposed over and in contact with the silicon nitride layer between the pair of epitaxial windows and has a thickness of 1.5 μm.
The base metal layer is arranged above the P-type polycrystalline silicon layer and is in contact with the P-type polycrystalline silicon layer, the thickness of the base metal layer is 140nm, and the base metal layer consists of a titanium layer with the thickness of 20nm and an aluminum layer with the thickness of 120nm which are arranged in sequence from bottom to top.
The preparation method of the high-linearity gallium nitride HBT radio-frequency power device provided by the embodiment comprises the following steps:
s1, sequentially depositing highly doped n above the non-uniformly doped GaN on Sapphire by using a Metal Organic Chemical Vapor Deposition (MOCVD) method+GaN (doping concentration 3X 10)18cm-3) And unintentionally doping GaN to form a secondary collector layer and a collector layer in sequence to obtain an intermediate product as shown in fig. 2;
s2, SiN is deposited above the current collecting layer by using a plasma enhanced chemical vapor deposition method (PECVD method), and a silicon nitride layer with the thickness of 0.12 mu m is formed, so that an intermediate product shown in the figure 3 is obtained;
s3, determining the position of the epitaxial window by using a photoetching method, and then etching the surface of the silicon nitride layer by using a buffered fluoride etching solution (BOE) to form the epitaxial window to obtain an intermediate product shown in figure 4;
s4, sequentially epitaxially growing 70nm of P-GaN and 50nm of N in the epitaxial window+-AlGaN，Thereby forming a P-GaN base layer and N+AlGaN emitter layer, wherein the linewidth L of the epitaxial windowbase1 μm to give an intermediate product as shown in figure 5;
s5, forming a silicon nitride layer and N+Depositing metal on the AlGaN emitter layer, depositing a titanium layer of 20nm, an aluminum layer of 120nm, a nickel layer of 55nm and a gold layer of 65nm from bottom to top in sequence, coating photoresist on the surface of the gold layer, photoetching, opening an emitter window, etching the metal and the silicon nitride layer by adopting a reactive ion etching method (RIE method), etching and stopping on the surface of the P-gallium nitride base layer, removing the photoresist to form an emitter, and forming the line width L of the emitteremitter0.5 μm, an intermediate product as shown in fig. 6 was obtained;
s6, performing Rapid Thermal Processing (RTP) on the intermediate product shown in the figure 6, wherein the temperature of the rapid thermal processing is 850 ℃, the time of the rapid thermal processing is 50S, forming ohmic contact of an emitter, then coating photoresist on the upper surface, performing photoetching, and opening the window of the outer base region to obtain the intermediate product shown in the figure 7;
s7, sputtering (PVD) by physical vapor deposition on the window of the outer base region to form alpha-Si with the thickness of 0.15 mu mP (the doping concentration is 1 multiplied by 10)20cm-3) Stripping off the photoresist, annealing at 810 ℃ for 25min, converting the P-type alpha-Si into P-type polycrystalline silicon to form a P-type polycrystalline silicon layer, and obtaining an intermediate product shown in figure 8;
s8, coating photoresist on the upper surface of the intermediate product shown in the figure 8, photoetching an SiN dielectric layer to the upper surface of the current collecting layer to form a collector contact hole, and photoetching to the upper surface of the P-type polycrystalline silicon to form a base metal hole to obtain the intermediate product shown in the figure 9;
s9, filling a titanium layer with the thickness of 20nm and an aluminum layer with the thickness of 120nm into the collector contact hole and the base metal hole by adopting electron beam evaporation, and respectively forming a collector contact hole metal layer and a base metal layer;
and S10, stripping and removing the photoresist, and performing Rapid Thermal Annealing (RTA), wherein the temperature of the rapid thermal annealing is 825 ℃, the time of the rapid thermal annealing is 50S, so that the collector contact hole metal layer and the base metal layer form ohmic contact, and the high-linearity gallium nitride HBT radio frequency power device shown in the figure 1 is obtained.
Fig. 10 is a schematic diagram of the application of the high linearity HBT radio frequency power device in the circuit according to the embodiment of the present invention.
As shown in FIG. 10, R of HBT is formed using silicon-based polysi as wiringbThe method realizes the blending of Si and GaN processes, and well plays a role in ballasting, which obviously improves the negative feedback and nonlinearity of the HBT. The Polysi wiring layer obviously reduces the intrinsic region of the device, the intrinsic region is positioned on the dielectric layer SiN, so that C, B electrode isolation is realized, and the high-frequency characteristic of the device is obviously improved.
Fig. 11 is a schematic diagram of the energy level of the high linearity HBT radio frequency power device along the X-axis direction in the embodiment of the present invention.
As shown in FIG. 11, since Si has a band gap of about 1/3 that of GaN wide band gap semiconductor, it is used as a P-type base, and the P-Si (with a band gap of 1.12eV) is in contact with P-GaN to form a heterojunction valence band difference Δ Ev1Is larger than the valence band difference delta E of the P-GaN (forbidden band width of 3.4eV)/P-GaN heterojunctionv2That is, P-Si has a lower valence band potential than P-GaN, so holes move more easily from P-GaN to P-Si.
Effects and effects of the embodiments
According to the high-linearity gallium nitride HBT radio-frequency power device related to the embodiment, the P-GaN extrinsic base region adopts mature P-type Si semiconductor to realize the self-ballasting structure, and meanwhile, the polycrystalline silicon interconnection line R is utilizedbIs a ballast resistor. Therefore, this embodiment can reduce the nonlinear component in the device I-V using this negative feedback structure.
According to the high-linearity gallium nitride HBT radio-frequency power device related to the embodiment, the extrinsic base region is effectively shortened by adopting the polycrystalline silicon interconnection line, so that the RC delay time can be reduced, and the f height of the device is obviously improvedT、fmaxA high frequency parameter.
The above embodiments are preferred examples of the present invention, and are not intended to limit the scope of the present invention.

Claims (10)

1.一种高线性氮化镓HBT射频功率器件，其特征在于，包括：1. a high linearity gallium nitride HBT radio frequency power device, is characterized in that, comprises: 外延材料层，由非均匀掺杂的GaN on Sapphire制成；Epitaxial material layer, made of non-uniformly doped GaN on Sapphire; 次集电层，设置在所述外延材料层上方，由高掺杂n+-GaN材料制成；a secondary collector layer, disposed above the epitaxial material layer, made of highly doped n + -GaN material; 集电层，设置在所述次集电层上方，由非故意掺杂GaN材料制成；a collector layer, disposed above the sub-collector layer, made of unintentionally doped GaN material; 氮化硅层，设置在所述集电层上方，具有一对沿氮化硅层中心线对称设置的集电极接触孔以及一对沿氮化硅层中心线对称设置在一对所述集电极接触孔内侧的外延窗口；The silicon nitride layer is arranged above the collector layer, and has a pair of collector contact holes arranged symmetrically along the center line of the silicon nitride layer and a pair of the collector electrodes arranged symmetrically along the center line of the silicon nitride layer The epitaxial window inside the contact hole; 集电极接触孔金属层，填充在所述集电极接触孔内；a collector contact hole metal layer, filled in the collector contact hole; P-氮化镓基层，与所述外延窗口大小相适应并填充在所述外延窗口内；P-gallium nitride base layer, adapted to the size of the epitaxial window and filled in the epitaxial window; 发射极层，设置在所述P-氮化镓基层上方，包括从下而上依次设置的N+-AlGaN发射极层以及发射极金属层；an emitter layer, arranged above the P-gallium nitride base layer, including an N + -AlGaN emitter layer and an emitter metal layer sequentially arranged from bottom to top; P型多晶硅层，设置在一对所述外延窗口之间的氮化硅层上方；以及A p-type polysilicon layer disposed over the silicon nitride layer between a pair of said epitaxial windows; and 基极金属层，设置在所述P型多晶硅层上方。A base metal layer is disposed above the P-type polysilicon layer. 2.根据权利要求1所述的高线性氮化镓HBT射频功率器件，其特征在于：2. high linearity gallium nitride HBT radio frequency power device according to claim 1, is characterized in that: 其中，所述外延材料层厚度为1.5μm-2.5μm，Wherein, the thickness of the epitaxial material layer is 1.5 μm-2.5 μm, 所述次集电层厚度为0.5μm-1.5μm，The thickness of the secondary collector layer is 0.5 μm-1.5 μm, 所述集电层的厚度为0.25μm-0.75μm，The thickness of the collector layer is 0.25μm-0.75μm, 所述外延窗口的线宽为0.5μm-1.5μm，The line width of the epitaxial window is 0.5 μm-1.5 μm, 所述P-氮化镓基层的厚度为60nm-80nm，The thickness of the P-gallium nitride base layer is 60nm-80nm, 所述N+-AlGaN发射极层的厚度为40nm-60nm，The thickness of the N + -AlGaN emitter layer is 40nm-60nm, 所述发射极层的线宽为0.25μm-0.75μm，The line width of the emitter layer is 0.25 μm-0.75 μm, 所述P型多晶硅层的厚度为0.1μm-0.2μm。The thickness of the P-type polysilicon layer is 0.1 μm-0.2 μm. 3.根据权利要求1所述的高线性氮化镓HBT射频功率器件，其特征在于：3. high linearity gallium nitride HBT radio frequency power device according to claim 1, is characterized in that: 其中，所述发射极金属层包括从下而上依次设置的厚度为15nm-25nm的钛层、厚度为110nm-130nm的铝层、厚度为50nm-60nm的镍层以及厚度为60nm-70nm的金层。The emitter metal layer includes a titanium layer with a thickness of 15nm-25nm, an aluminum layer with a thickness of 110nm-130nm, a nickel layer with a thickness of 50nm-60nm, and a gold layer with a thickness of 60nm-70nm, which are sequentially arranged from bottom to top. Floor. 4.根据权利要求1所述的高线性氮化镓HBT射频功率器件，其特征在于：4. high linearity gallium nitride HBT radio frequency power device according to claim 1, is characterized in that: 其中，所述集电极接触孔金属层包括从下而上依次设置的厚度为15nm-25nm的钛层以及厚度为110nm-130nm的铝层。Wherein, the metal layer of the collector contact hole includes a titanium layer with a thickness of 15 nm-25 nm and an aluminum layer with a thickness of 110 nm-130 nm, which are sequentially arranged from bottom to top. 5.根据权利要求1所述的高线性氮化镓HBT射频功率器件，其特征在于：5. high linearity gallium nitride HBT radio frequency power device according to claim 1, is characterized in that: 其中，所述基极金属引线层包括从下而上依次设置的厚度为15nm-25nm的钛层以及厚度为110nm-130nm的铝层。Wherein, the base metal lead layer includes a titanium layer with a thickness of 15 nm-25 nm and an aluminum layer with a thickness of 110 nm-130 nm, which are sequentially arranged from bottom to top. 6.一种高线性氮化镓HBT射频功率器件的制备方法，用于制备权利要求1-5任意一项所述的高线性氮化镓HBT射频功率器件，其特征在于，包括如下步骤：6. A preparation method of a high linearity gallium nitride HBT radio frequency power device, for preparing the high linearity gallium nitride HBT radio frequency power device described in any one of claims 1-5, is characterized in that, comprises the steps: S1，在非均匀掺杂的GaN on Sapphire上方使用金属有机化合物化学气相沉淀法依次沉积高掺杂n+-GaN以及非故意掺杂GaN，依次形成次集电层和集电层；S1, using the metal organic compound chemical vapor deposition method to sequentially deposit highly doped n + -GaN and unintentionally doped GaN on the non-uniformly doped GaN on Sapphire to form a sub-collector layer and a collector layer in turn; S2，在所述集电层上方使用等离子体增强化学的气相沉积法法沉积SiN，形成氮化硅层；S2, using a plasma-enhanced chemical vapor deposition method to deposit SiN on the collector layer to form a silicon nitride layer; S3，在所述氮化硅层表面使用缓冲氟化物刻蚀液刻蚀，形成外延窗口；S3, using a buffered fluoride etchant to etch the surface of the silicon nitride layer to form an epitaxial window; S4，在所述外延窗口中依次外延P-GaN以及N+-AlGaN，从而形成P-氮化镓基层以及N+-AlGaN发射极层；S4, epitaxy P-GaN and N + -AlGaN sequentially in the epitaxial window, thereby forming a P-gallium nitride base layer and an N + -AlGaN emitter layer; S5，在所述氮化硅层以及N+-AlGaN发射极层上方沉积金属，光刻，打开发射极窗口，采用反应离子刻蚀法刻蚀所述金属以及氮化硅层，刻蚀停留在所述P-氮化镓基层表面，形成发射极；S5, deposit metal over the silicon nitride layer and the N + -AlGaN emitter layer, perform photolithography, open the emitter window, and use reactive ion etching to etch the metal and the silicon nitride layer, and the etching stays at The surface of the P-gallium nitride base layer forms an emitter; S6，快速热处理，形成所述发射极的欧姆接触，光刻，打开外基区窗口；S6, rapid heat treatment to form the ohmic contact of the emitter, photolithography, to open the extrinsic base region window; S7，物理气相沉积溅射P型α-Si，剥离去胶，炉退火，将所述P型α-Si转变为P型多晶硅，形成所述P型多晶硅层；S7, physical vapor deposition sputtering P-type α-Si, stripping and removing glue, furnace annealing, and converting the P-type α-Si into P-type polysilicon to form the P-type polysilicon layer; S8，光刻SiN介质层至集电层上表面，形成集电极接触孔，光刻至所述P型多晶硅上表面，形成基极金属孔；S8, photolithography the SiN dielectric layer to the upper surface of the collector layer to form a collector contact hole, and photolithography to the upper surface of the P-type polysilicon to form a base metal hole; S9，采用电子束蒸发金属填充至所述集电极接触孔以及基极金属孔，分别形成集电极接触孔金属层以及基极金属层；S9, using electron beam evaporation metal to fill the collector contact hole and the base metal hole to form a collector contact hole metal layer and a base metal layer respectively; S10，剥离去胶，快速热退火，使集电极接触孔金属层以及基极金属层形成欧姆接触，即得高线性氮化镓HBT射频功率器件。S10, peeling off the glue, rapid thermal annealing, so that the collector contact hole metal layer and the base metal layer form an ohmic contact, that is, a high linearity gallium nitride HBT radio frequency power device is obtained. 7.根据权利要求6所述的高线性氮化镓HBT射频功率器件的制备方法，其特征在于，7. the preparation method of high linearity gallium nitride HBT radio frequency power device according to claim 6, is characterized in that, 其中，所述沉积高掺杂n+-GaN的掺杂浓度为2.5×1018cm-3-3.5×1018cm-3。Wherein, the doping concentration of the deposited highly doped n + -GaN is 2.5×10 18 cm -3 -3.5×10 18 cm -3 . 8.根据权利要求6所述的高线性氮化镓HBT射频功率器件的制备方法，其特征在于，8. the preparation method of the high linearity gallium nitride HBT radio frequency power device according to claim 6, is characterized in that, 其中，所述P型α-Si的掺杂浓度为0.5×1020cm-3-1.5×1020cm-3。Wherein, the doping concentration of the P-type α-Si is 0.5×10 20 cm −3 to 1.5×10 20 cm −3 . 9.根据权利要求6所述的高线性氮化镓HBT射频功率器件的制备方法，其特征在于，9. The preparation method of high linearity gallium nitride HBT radio frequency power device according to claim 6, is characterized in that, 其中，步骤S7中炉退火温度为800℃-820℃，炉退火的时间为20min-30min。Wherein, in step S7, the furnace annealing temperature is 800°C-820°C, and the furnace annealing time is 20min-30min. 10.根据权利要求6所述的高线性氮化镓HBT射频功率器件的制备方法，其特征在于，10. The preparation method of the high linearity gallium nitride HBT radio frequency power device according to claim 6, wherein, 其中，步骤S10中快速热退火的温度为800℃-850℃，快速热退火的时间为45s-55s。The temperature of the rapid thermal annealing in step S10 is 800°C-850°C, and the time of the rapid thermal annealing is 45s-55s.
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