CN111082312A - Isolator-saving edge-emitting light device and manufacturing method thereof - Google Patents
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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Abstract
The invention discloses an isolator-saving edge-emitting optical device and a manufacturing method thereof, wherein the method comprises the following steps: s1, epitaxially growing a buffer layer and an active waveguide layer on the semiconductor substrate; s2, corroding the end part of the active waveguide layer to manufacture a waveguide-free section; s3, growing secondary epitaxial layer on the active waveguide layer and the non-waveguide section; s4, manufacturing a strip structure of the edge-emitting optical device on the secondary epitaxial layer, thinning the back of the substrate, and manufacturing a front electrode and a back electrode on the front and the back of the optical device respectively; and S5, evaporating an antireflection dielectric film I on the light emergent end face of the edge-emitting optical device. The invention makes the end surface reflected light and the external reflected light lose the guide of the waveguide by manufacturing the waveguide-free section on the end surface of the edge-emitting optical device, thereby weakening the interference to the active area; meanwhile, an optical isolator between an optical device and the optical fiber is saved, and the insertion loss is reduced.
Description
Technical Field
The invention belongs to the technical field of manufacturing of optoelectronic devices, and particularly relates to an isolator-free edge-emitting optical device and a manufacturing method thereof.
Background
The semiconductor optical device is a key device in the fields of optical fiber communication, information transmission, artificial intelligence, super-computation sensing and the like. However, both the cleaved end surface of the optical device and the optical fiber head during optical fiber coupling have reflected light, and the reflected light re-enters the active region of the optical device, which can cause the phase and polarization of the optical device to be disordered.
In order to prevent the reflected light from interfering with the output characteristics of the optical device, two measures are mainly taken in the industry: firstly, an antireflection dielectric film is evaporated on a light emergent end face of an optical device to inhibit end face reflection; and secondly, an isolator is arranged between the optical device and the coupling optical fiber to isolate reflected light. Although the antireflection dielectric film can not completely eliminate the reflection of the end face of the optical device, the end face reflection can be greatly improved and reduced, but the antireflection dielectric film also enables the optical device to lose the reflection capability of external light, so that the external light can easily enter the optical device and enter the active region through the waveguide to form interference; and installing an optical isolator introduces insertion loss in addition to cost considerations.
Disclosure of Invention
Aiming at the technical problems, the invention provides an isolator-free edge-emitting optical device and a manufacturing method thereof, which can reduce the packaging cost of the edge-emitting optical device while reducing the interference of reflected light on an active area.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a manufacturing method of an isolator-free edge-emitting light device comprises the following steps:
s1, epitaxially growing a buffer layer and an active waveguide layer on the semiconductor substrate;
s2, etching the end of the active waveguide layer by dry or wet or dry/wet mixed etching technology to make a waveguide-free section;
s3, growing secondary epitaxial layer on the active waveguide layer and the non-waveguide section;
s4, manufacturing a strip structure of the edge-emitting light device on the secondary epitaxial layer, thinning the back surface of the substrate, and manufacturing a front electrode and a back electrode on the front surface and the back surface of the edge-emitting light device respectively;
and S5, evaporating an antireflection dielectric film I on the light emergent end face of the edge-emitting optical device.
The edge-emitting optical device includes an FP (Fabry-Perot cavity) laser, an SLD (super luminescent diode), an SOA (semiconductor amplifier), a DFB (distributed feedback) laser, a DBR (distributed bragg reflector) laser, or a wavelength tunable laser, and integrated devices thereof.
If the edge-emitting optical device is an optical device with a grating, a step of fabricating a grating structure on the floating grating layer of the active waveguide layer is added before step S3; the optical device including the grating includes a DFB laser, a DBR laser, or a wavelength tunable laser.
In step S1, the substrate is any one of an InP (indium phosphide), GaAs (gallium arsenide), GaN (gallium nitride), SiC (silicon carbide), AlN (aluminum nitride), or ZnO (zinc oxide) substrate. In step S1, the buffer layer includes a far-field reduction layer; the active waveguide layer comprises a lower limiting layer, a multi-quantum well active region structural layer, an upper limiting layer and a suspension grating layer, and the active waveguide layer grows on the buffer layer.
The doping type of the buffer layer is the same as that of the substrate, and the doping concentration of the buffer layer is 5 multiplied by 1018-5×1017cm-3Gradually decreasing from bottom to top; the structure layer of the multi-quantum well active region is not doped, the upper limiting layer and the lower limiting layer are not doped or only the lower limiting layer is lightly doped, and when the lower limiting layer is lightly doped, the doping type of the lower limiting layer is the same as that of the substrate; the doping type of the suspended grating layer is opposite to that of the substrate, and the doping concentration of the suspended grating layer is 2 multiplied by 1017-6×1017cm-3。
In step S2, the waveguide-free segment has a length of 5-20 μm.
In step S3, the secondary epitaxial layer includes a grating buried layer or an InP thin layer, an etch stop layer, a cladding layer, a bandgap transition layer, and an ohmic contact layer, which are sequentially grown, and the doping type of the secondary epitaxial layer is opposite to that of the substrate, and the doping concentration is 2 × 1017-2×1019cm-3Range of (1)And the doping concentration of each layer of the grating buried layer or the InP thin layer, the etching stop layer, the cladding layer, the band gap transition layer and the ohmic contact layer is increased in sequence.
In step S4, the stripe structure is a light emitting waveguide of an optical device, and the stripe structure includes a ridge waveguide stripe structure and a heterogeneous buried stripe structure; the non-waveguide section is arranged at one end of the active waveguide layer or symmetrically arranged at two ends of the active waveguide layer so as to adapt to different application requirements.
In step S5, an antireflection dielectric film II or a high-reflection dielectric film is evaporated on the backlight end face of the edge-emitting light device, and the reflection coefficient of the high-reflection dielectric film is 75% to 95%; the reflection coefficient of the antireflection dielectric film I is 0.01-0.05%.
An isolator-saving edge-emitting light device, which is manufactured by the manufacturing method of the isolator-saving edge-emitting light device.
The invention has the beneficial effects that:
the manufacturing method is simple and easy to operate, and by manufacturing a small section of waveguide-free area on the two end surfaces or the light-emitting end surface of the optical device and evaporating the antireflection dielectric film on the light-emitting end surface of the optical device, the reflected light on the end surface of the optical device loses the guide effect of the waveguide and becomes diffuse reflection, so that the interference of the end surface reflected light on the active area is greatly weakened; after the external reflected light enters the end face of the optical device, the external reflected light loses the guide of the waveguide, and is difficult to enter the active region of the optical device. Therefore, when the optical device is used, the isolator can be omitted and the optical device can be directly coupled with the optical fiber, so that the packaging cost of the optical device is reduced, the insertion loss caused by the isolator is avoided, and the effect is obvious.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic view of a primary epitaxial structure.
Fig. 2 is a schematic diagram of after etching away a portion of the active waveguide layer.
Fig. 3 is a schematic diagram of the fabrication of a grating over an active waveguide layer.
Fig. 4 is a schematic view of a double epitaxial growth layer.
Fig. 5 is a schematic diagram of a DFB laser structure without waveguide regions at both ends.
Fig. 6 is a schematic diagram of a DFB laser structure with a single-ended waveguide-free region.
In the figure, 1 is a substrate, 2 is a buffer layer, 3 is an active waveguide layer, 4 is a waveguide-free section, 5 is a grating, 6 is a secondary epitaxial layer, 7 is a front electrode, 8 is a back electrode, 9 is an antireflection dielectric film I, 9' is an antireflection dielectric film II, 10 is a high reflection dielectric film, and 11 is a far field reduction layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
Example 1: in this embodiment, the edge-emitting optical device is a DFB laser, and includes the following steps:
s1, as shown in fig. 1, epitaxially growing a buffer layer 2 and an active waveguide layer 3 on an n-type InP substrate 1;
the buffer layer 2 is an n-type InP layer with the thickness of 1.5-2.0 μm and the doping concentration is 5 × 1018-5×1017cm-3The range is gradually decreased; the buffer layer 2 comprises a far field reduction layer 11 with the thickness of 100-200nm, and the material of the far field reduction layer 11 is InGaAsP (indium gallium arsenic phosphide); the active waveguide layer 3 comprises a lower limit layer, a multi-quantum well active region structure layer, an upper limit layer and a suspension grating layer, wherein the quantum well active region structure layer is an InGaAlAs/InP system or InGaAsP systemThe number of quantum wells is 3-10 in the InP system and the quantum wells are not doped; the upper limiting layer and the lower limiting layer have a thickness of 30-100nm, and are undoped or only lightly doped with n-type dopant at a doping concentration of 2 × 1017cm-3(ii) a The suspended grating layer is composed of a p-type InP layer and a p-type InGaAsP layer, and the doping concentration is 2 x 1017-6×1017cm-3The thickness of the suspended grating layer is related to the coupling factor of the grating.
S2, as shown in fig. 2, symmetrically etching off the active waveguide layer 3 with a length of 10 μm at both ends of the active waveguide layer 3 by using a silicon oxide mask and photolithography to expose the underlying buffer layer 2 to form a waveguide-free section 4.
S3, as shown in FIG. 3, using electron beam exposure or holographic exposure or nano-imprint technique to fabricate DFB grating 5 on the suspended grating layer of the non-corroded active waveguide layer 3, the depth of the grating 5 is 20-60nm, and the period of the grating 5 is related to the design wavelength.
S4, as shown in FIG. 4, after the natural oxide layer removing treatment is carried out on the surfaces of the grating 5 and the wafer without the waveguide section 4, the secondary epitaxial layer 6 is grown on the surface of the wafer; the secondary epitaxial layer 6 comprises a p-type InP grating buried layer, a p-type InGaAsP etching stop layer, a p-type InP cladding layer, a p-type InGaAsP band gap transition layer and a heavily doped p-type InGaAs ohmic contact layer which are epitaxially grown in sequence from bottom to top; the thickness of the grating buried layer is 50-100nm, the thickness of the etching stop layer is 10-20nm, the thickness of the cladding layer is 1.5-2 mu m, the thickness of the band gap transition layer is 50-100nm, and the thickness of the ohmic contact layer is 100-200 nm; the doping concentration of the secondary epitaxial layer 6 is 2 x 1017-2×1019cm-3Gradually increases, and the doping concentration of the ohmic contact layer on the top layer is the highest.
S5, manufacturing a strip structure of the laser, thinning the back of the substrate 1, and respectively manufacturing a front electrode 7 and a back electrode 8 on the ohmic contact layer and the substrate, wherein the length of the front electrode 7 corresponds to the length of the active waveguide layer 3, and the processes are standard manufacturing processes of the strip laser, and are not repeated in the invention.
S6, after the wafer is cleaved, evaporating an antireflection dielectric film I9 with the reflection coefficient of 0.01-0.05% on the light emergent end face of the laser, and evaporating an antireflection dielectric film II9' with the reflection coefficient of 0.1% on the backlight end face. The cross-sectional structure of the final isolator-free edge-emitting DFB laser is shown in fig. 5.
Example 2: a method for manufacturing an isolator-free edge-emitting light device is disclosed, as shown in FIG. 6, the main difference between this embodiment and embodiment 1 is that a waveguide-free section 4 is manufactured only at the light-emitting end of a DFB laser, and an antireflection dielectric film I9 with a reflection coefficient of 0.01-0.05% is evaporated on the light-emitting end face; in order to increase the output power of the DFB laser, a highly reflective dielectric film 10 having a reflection coefficient of 90% is deposited on the back-light end surface of the DFB laser. The cross-sectional structure of the resulting single-ended waveguide-less isolator-edge-emitting DFB laser is shown in fig. 6.
Example 3: an isolator-saving edge-emitting light device, which is different from the edge-emitting light devices in embodiments 1 and 2 mainly in that: the edge-emitting light device in this embodiment is a light device without a grating, and therefore, is manufactured by a simpler method than those of embodiments 1 and 2.
The edge-emitting optical device comprises a substrate 1, a buffer layer 2, an active waveguide layer 3 and a secondary epitaxial layer 6, wherein the buffer layer 2, the active waveguide layer 3 and the secondary epitaxial layer are sequentially epitaxially grown on the substrate 1 from bottom to top; the active waveguide layer 3 only comprises a lower limiting layer, a multi-quantum well active region structural layer and an upper limiting layer; the secondary epitaxial layer 6 comprises an InP thin layer, an etching stop layer, a cladding layer, a band gap transition layer and an ohmic contact layer which are grown in sequence, the doping type of the secondary epitaxial layer 6 is opposite to that of the substrate 1, and the doping concentration is 2 multiplied by 1017-2×1019cm-3The ranges are sequentially increased from bottom to top; the two ends of the active waveguide layer 3 are symmetrically provided with the waveguide-free sections 4, or one end of the active waveguide layer 3 is provided with the waveguide-free sections 4, and the length of the waveguide-free sections 4 is 5-20 μm; the ohmic contact layer is provided with a front electrode 7, the position of the front electrode 7 corresponds to the position of the active waveguide layer 3, and the length of the front electrode 7 is equal to that of the active waveguide layer 3; a back electrode 8 is arranged at the lower part of the substrate 1; and an antireflection dielectric film I9 is evaporated on the light emergent end face of the optical device, and a high-reflection dielectric film 10 or an antireflection dielectric film II9' is evaporated on the backlight end face.
The method for manufacturing the edge-emitting light device of the embodiment comprises the following steps:
sequentially epitaxially growing a buffer layer 2 and an active waveguide layer 3 on a substrate 1, wherein the active waveguide layer 3 only comprises a lower limiting layer, a multiple quantum well active region structure layer and an upper limiting layer; manufacturing a waveguide-free section 4 at one end or two ends of the active waveguide layer 3; a secondary epitaxial layer 6 is formed on the active waveguide layer 3 and the non-waveguide section 4, and the secondary epitaxial layer 6 is an InP thin layer, an etching stop layer, a cladding layer, a band gap transition layer and an ohmic contact layer; manufacturing a strip structure of the optical device on the secondary epitaxial layer 6, thinning the back, manufacturing a front electrode 7 and a back electrode 8, wherein the position of the electrode metal layer 7 corresponds to the length of the active waveguide layer 3; and after the wafer is cleaved, evaporating an antireflection dielectric film I9 at the light-emitting end of the optical device, and evaporating an antireflection dielectric film II9' or evaporating a high-reflection dielectric film 10 at the backlight end. Thus, the manufacturing of the isolator side emitting light device without the grating is completed.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A method for manufacturing an isolator-free edge-emitting light device is characterized by comprising the following steps:
s1, epitaxially growing a buffer layer (2) and an active waveguide layer (3) on the semiconductor substrate (1);
s2, corroding the end part of the active waveguide layer (3) to manufacture a waveguide-free section (4);
s3, growing a secondary epitaxial layer (6) on the active waveguide layer (3) and the non-waveguide section (4);
s4, manufacturing a strip-shaped structure of the edge-emitting light device on the secondary epitaxial layer (6), thinning the back surface of the substrate (1), and manufacturing a front electrode (7) and a back electrode (8) on the front surface and the back surface of the light device respectively;
and S5, evaporating an antireflection dielectric film I (9) on the light emergent end face of the edge-emitting light device.
2. The method of fabricating an isolator-less edge-emitting light device of claim 1, wherein the edge-emitting light device comprises a FP laser, a SLD, an SOA, a DFB laser, a DBR laser, or a wavelength tunable laser.
3. The method of fabricating an isolator-ready light emitting device according to claim 1 or 2, wherein if the light emitting device is a grating-ready light device, a step of fabricating a grating (5) on a suspended grating layer of the active waveguide layer (3) is added before step S3; the optical device including the grating includes a DFB laser, a DBR laser, or a wavelength tunable laser.
4. The method of fabricating an isolator edge-emitting light device according to claim 3, wherein in step S1, the substrate (1) is one of an InP, GaAs, GaN, SiC, AlN or ZnO substrate; the buffer layer (2) comprises a far field reduction layer (11); the active waveguide layer (3) comprises a lower limiting layer, a multi-quantum well active region structural layer, an upper limiting layer and a suspension grating layer, and the active waveguide layer (3) grows on the buffer layer (2).
5. Method for manufacturing an isolator edge-emitting light device according to claim 4, wherein the doping type of the buffer layer (2) is the same as the doping type of the substrate (1), and the doping concentration of the buffer layer (2) is 5 x 1018-5×1017cm-3Gradually decreasing from bottom to top; the structure layer of the multi-quantum well active region is not doped, the upper limiting layer and the lower limiting layer are not doped or only the lower limiting layer is lightly doped, and when the lower limiting layer is lightly doped, the doping type of the lower limiting layer is the same as that of the substrate (1); the doping type of the suspended grating layer is opposite to that of the substrate (1), and the doping concentration of the suspended grating layer is 2 multiplied by 1017-6×1017cm-3。
6. The method of fabricating an isolator edge-emitting light device according to claim 1 or 5, wherein in step S2, the length of the waveguide-free segment (4) is 5-20 μm.
7. The method of claim 6, wherein in step S3, the secondary epitaxial layer (6) comprises a grating buried layer or InP thin layer, an etch stop layer, a cladding layer, a band gap transition layer and an ohmic contact layer, which are sequentially grown from bottom to top, wherein the doping type of the secondary epitaxial layer (6) is opposite to that of the substrate (1), and the doping concentration is 2 x 1017-2×1019cm-3And the doping concentration is increased from bottom to top in sequence.
8. The fabrication method of the isolator edge-emitting light device according to claim 1 or 7, wherein in step S4, the stripe structures include ridge waveguide stripe structures and heterogeneous buried stripe structures; the waveguiding-free section (4) is arranged at the light-emitting end of the side-emitting light device or symmetrically arranged at the two ends of the side-emitting light device.
9. The method for manufacturing an isolator edge-emitting light device according to claim 8, wherein in step S5, an antireflection dielectric film II (9') or a highly reflective dielectric film (10) is evaporated on a backlight end surface of the edge-emitting light device, and a reflection coefficient of the highly reflective dielectric film (10) is 75% to 95%; the reflection coefficient of the antireflection dielectric film I (9) is 0.01-0.05%.
10. An isolator-saving edge-emitting light device, wherein the edge-emitting light device is manufactured by the method of claim 1 or 9.
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| CN112636178A (en) * | 2021-03-10 | 2021-04-09 | 陕西源杰半导体科技股份有限公司 | Laser chip and preparation method |
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| CN105281200A (en) * | 2015-10-09 | 2016-01-27 | 南京大学（苏州）高新技术研究院 | Integrated high-speed digital modulation WDM-PON optical module based on REC technology |
| CN107221838A (en) * | 2017-06-12 | 2017-09-29 | 陕西源杰半导体技术有限公司 | Improve the chip of laser and its manufacture method of side mode suppression ratio |
| CN110401105A (en) * | 2019-08-12 | 2019-11-01 | 武汉敏芯半导体股份有限公司 | Single chip integrated narrow linewidth laser and production method |
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| CN112636178A (en) * | 2021-03-10 | 2021-04-09 | 陕西源杰半导体科技股份有限公司 | Laser chip and preparation method |
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