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CN111245204A - Motor controller and method and system for adaptively changing IBGT gate-level resistance value of motor controller - Google Patents

Motor controller and method and system for adaptively changing IBGT gate-level resistance value of motor controller Download PDF

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CN111245204A
CN111245204A CN202010136144.5A CN202010136144A CN111245204A CN 111245204 A CN111245204 A CN 111245204A CN 202010136144 A CN202010136144 A CN 202010136144A CN 111245204 A CN111245204 A CN 111245204A
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gate
resistance value
igbt
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level
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杨士保
曹艺
吴奎
陈骏
李家成
赵明
王伟
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ZHEJIANG FOUNDER MOTOR CO Ltd
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02PCONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P23/00Arrangements or methods for the control of AC motors characterised by a control method other than vector control
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0048Circuits or arrangements for reducing losses
    • H02M1/0054Transistor switching losses
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
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Abstract

本发明公开了一种电机控制器及自适应改变其IBGT门级电阻值的方法、系统,所述方法包括如下步骤:(1)检测电机控制器在不同工况下所对应的最佳门级电阻值,获取“工况‑最佳门级电阻值”对应关系;(2)在运行状态下,测定当前电机控制器工况,根据所述“工况‑最佳门级电阻值”对应关系确定当前工况对应的最佳门级电阻值;(3)将IGBT驱动电路中的门级电阻值调整为步骤(2)所述的最佳门级电阻值。本发明可在保证IGBT安全运行的前提下,最大化地降低IGBT的损耗,提高IGBT的工作效率。

Figure 202010136144

The invention discloses a motor controller and a method and system for adaptively changing its IBGT gate-level resistance value. The method includes the following steps: (1) Detecting the best gate-level corresponding to the motor controller under different working conditions resistance value, obtain the corresponding relationship of “working condition-optimal gate-level resistance value”; (2) in the running state, measure the current motor controller working condition, according to the corresponding relationship of “working condition-optimal gate-level resistance value” Determine the optimal gate-level resistance value corresponding to the current working condition; (3) adjust the gate-level resistance value in the IGBT drive circuit to the optimal gate-level resistance value described in step (2). The invention can minimize the loss of the IGBT and improve the working efficiency of the IGBT under the premise of ensuring the safe operation of the IGBT.

Figure 202010136144

Description

电机控制器及自适应改变其IBGT门级电阻值的方法、系统Motor controller and method and system for adaptively changing its IBGT gate resistance value

技术领域technical field

本发明涉及一种IGBT驱动方法,具体地说,是涉及一种电机控制器及自适应改变其IGBT门级驱动电路值的方法、系统。The invention relates to an IGBT driving method, in particular to a motor controller and a method and system for adaptively changing the value of its IGBT gate-level driving circuit.

背景技术Background technique

电力电子系统主要由主电路和控制电路构成,其中,主电路由IGBT等开关器件构成,大功率IGBT运行的环境一般都比较恶劣,其承受的电压可高至千伏以上,一旦发生故障而未得到及时处理,会引起非常严重的后果。尤其在新能源汽车领域,IGBT作为电动汽车中电机控制单器的核心器件之一,其门级门级电阻阻值大小的设计是决定其工作性能的关键因素。The power electronic system is mainly composed of the main circuit and the control circuit. Among them, the main circuit is composed of switching devices such as IGBTs. The operating environment of high-power IGBTs is generally harsh, and the voltage it can withstand can be as high as 1000 volts. If it is dealt with in time, it will cause very serious consequences. Especially in the field of new energy vehicles, IGBT is one of the core devices of the motor control unit in electric vehicles, and the design of the resistance value of its gate-level gate-level resistance is a key factor determining its performance.

电机控制器母线输入电压既是高压蓄电池输出电压,由于高压蓄电池输出电压范围较宽(200V-450V)或更高范围电压,且目前IGBT的门级电阻多为固定的阻值,为了保证IGBT门在最高电压和低温下IGBT的关断电压应力有合理的降额,需要增大门级电阻参数,但门级电阻较大会增加IGBT的关断时间,增加损耗,同时使其结温升高,导致IGBT动作效率及电控的功率密度均受影响。以图1为例,现有的控制器BUS输入电压范围比较宽,电控工作的额定电压时间较长,为了保证在最高电压下IGBT的关断电压应力有合理的降额需要增大门级电阻R1和R2设计参数,但显然地,R1和R2较大导致关断时间较长IGBT损耗较大,效率低,且结温升高,牺牲了电控的功率密度;相反地,若R1和R2参数设计过小,则在极端情况下,IGBT可能超出SOA安全工作区。The input voltage of the motor controller bus is both the output voltage of the high-voltage battery. Since the output voltage of the high-voltage battery has a wide range (200V-450V) or a higher voltage range, and the gate-level resistance of the current IGBT is mostly fixed resistance, in order to ensure that the IGBT gate is in the The turn-off voltage stress of the IGBT at the highest voltage and low temperature has a reasonable derating, and the gate-level resistance parameter needs to be increased. However, a larger gate-level resistance will increase the turn-off time of the IGBT, increase the loss, and at the same time increase the junction temperature, resulting in the IGBT Both the operating efficiency and the power density of the electronic control are affected. Taking Figure 1 as an example, the existing controller BUS input voltage range is relatively wide, and the rated voltage time of the electronic control operation is long. In order to ensure a reasonable derating of the IGBT turn-off voltage stress at the highest voltage, it is necessary to increase the gate resistance. R1 and R2 are design parameters, but obviously, larger R1 and R2 lead to longer turn-off time, larger IGBT loss, lower efficiency, and higher junction temperature, sacrificing the power density of electronic control; on the contrary, if R1 and R2 If the parameter design is too small, in extreme cases, the IGBT may exceed the SOA safe operating area.

针对上述问题,公开号为CN209375598U的中国专利提供了一种IGBT变电阻开通电路,该电路通过电阻分压来实现变电阻开通,在一定程度上降低了IGBT运行过程中的风险,但其仅能实现两种不同阻值的切换,不能对电阻值进行自适应调整,不能从根本上解决IGBT开闭效率低、损耗大的问题。In view of the above problems, the Chinese Patent Publication No. CN209375598U provides an IGBT varistor turn-on circuit, which realizes the varistor turn-on by dividing the voltage of the resistor, which reduces the risk during the operation of the IGBT to a certain extent, but it can only To achieve the switching of two different resistance values, the resistance value cannot be adjusted adaptively, and the problems of low switching efficiency and large loss of IGBT cannot be fundamentally solved.

公开号为CN107342759A的中国专利提供了一种数字式的智能IGBT驱动方法及其系统,该方案可用于控制IGBT模组在上电与断电之间以一个固定的时间开通或关断,进一步降低了IGBT的运行风险,但其不能将IGBT的门级电阻的阻值调整为最优,即不能最大化的降低损耗、提高电控的功率密度。The Chinese patent with publication number CN107342759A provides a digital intelligent IGBT driving method and system. The solution can be used to control the IGBT module to be turned on or off at a fixed time between power-on and power-off, further reducing the power consumption. It reduces the operational risk of the IGBT, but it cannot adjust the resistance value of the gate resistor of the IGBT to an optimal value, that is, it cannot maximize the loss reduction and improve the power density of the electronic control.

发明内容SUMMARY OF THE INVENTION

为了解决上述技术问题,本发明的第一目的在于提供一种自适应改变电机控制器的IGBT门级电阻值的方法,其可在保证IGBT安全运行的前提下,最大化地降低IGBT的损耗,提高IGBT的工作效率。In order to solve the above technical problems, the first object of the present invention is to provide a method for adaptively changing the IGBT gate resistance value of the motor controller, which can minimize the loss of the IGBT under the premise of ensuring the safe operation of the IGBT, Improve the working efficiency of IGBT.

本发明的第二目的在于提供一种自适应改变电机控制器的IGBT门级电阻值的系统,该系统可用于运行上述方法。The second object of the present invention is to provide a system for adaptively changing the IGBT gate resistance value of a motor controller, which can be used to run the above method.

本发明的第三目的在于提供一种电机控制器,该电机控制器包含有上述自适应改变IGBT门级电阻的系统。The third object of the present invention is to provide a motor controller, which includes the above-mentioned system for adaptively changing IGBT gate resistance.

为实现上述目的,本发明的一个方面,提供一种自适应改变电机控制器的IGBT门级电阻值的方法,该方法包括如下步骤:In order to achieve the above object, one aspect of the present invention provides a method for adaptively changing the IGBT gate-level resistance value of a motor controller, the method comprising the following steps:

(1)检测电机控制器在不同工况下所对应的最佳门级电阻值,获取“工况-最佳门级电阻值”对应关系;(1) Detect the optimal gate-level resistance value corresponding to the motor controller under different working conditions, and obtain the corresponding relationship of "working condition-optimal gate-level resistance value";

(2)在运行状态下,测定当前电机控制器工况,根据所述“工况-最佳门级电阻值”对应关系确定当前工况对应的最佳门级电阻值;(2) In the running state, measure the current working condition of the motor controller, and determine the optimum gate-level resistance value corresponding to the current working condition according to the corresponding relationship of the “working condition-optimal gate-level resistance value”;

(3)将IGBT驱动电路中的门级电阻值调整为步骤(2)所述的最佳门级电阻值。(3) Adjust the gate-level resistance value in the IGBT drive circuit to the optimum gate-level resistance value described in step (2).

作为优选,步骤(1)中,检测电机控制器的不同工况所对应的最佳门级电阻值包括如下步骤:Preferably, in step (1), detecting the optimal gate-level resistance value corresponding to different working conditions of the motor controller includes the following steps:

1)设定初始工况,并预设该初始工况下的门级电阻初始值;1) Set the initial working condition, and preset the initial value of gate resistance under the initial working condition;

2)判断在当前门级电阻值下,IGBT是否超出安全工作区;2) Determine whether the IGBT exceeds the safe working area under the current gate resistance value;

若是,则增大门级电阻值,则重新判断IGBT是否超出安全工作区;If so, increase the gate-level resistance value, and then re-judg whether the IGBT exceeds the safe working area;

若不是,则判断其是否满足降额标准,若满足,则将当前门级电阻值作为当前工况下的最佳门级电阻值,若不满足,则减小门级电阻值,直至其减小至满足IGBT降额标准的最小值,将该最小值作为最佳门级电阻值;If not, judge whether it meets the derating standard. If so, take the current gate-level resistance value as the best gate-level resistance value under the current working condition. If not, reduce the gate-level resistance value until it decreases. As small as the minimum value that meets the IGBT derating standard, the minimum value is used as the optimal gate-level resistance value;

调整工况,重复步骤1)-2),直至完成对所有工况的最佳门级电阻值的检测。Adjust the working conditions and repeat steps 1)-2) until the detection of the optimal gate-level resistance value for all working conditions is completed.

作为优选,所述IGBT的降额标准为不高于满额的80%。Preferably, the derating standard of the IGBT is not higher than 80% of the full capacity.

作为优选,所述“工况-最佳门级电阻值”对应关系为“工况-最佳门级电阻值”关系表或“工况-最佳门级电阻值”关系曲线。Preferably, the corresponding relationship of "working condition-optimal gate-level resistance value" is a relation table of "working condition-optimal gate-level resistance value" or a relation curve of "working condition-optimal gate-level resistance value".

作为优选,步骤(1)中,所述工况包括电机控制器母线的电压值和环境温度值。Preferably, in step (1), the operating conditions include the voltage value of the motor controller bus and the ambient temperature value.

作为优选,将IGBT的门级电阻值调整为步骤(2)所述的最佳门级电阻值的方法为:根据所述最佳门级电阻值,调整并联于IGBT门级驱动电路中门级电阻的数量。Preferably, the method for adjusting the gate-level resistance value of the IGBT to the optimum gate-level resistance value described in step (2) is: according to the optimum gate-level resistance value, adjusting the gate level in the IGBT gate-level drive circuit connected in parallel number of resistors.

本发明的另一个方面,提供一种自适应改变电机控制器的IGBT门级电阻值的系统,该系统包括控制单元、检测单元、高低压隔离单元、最佳门级电阻值调节单元及与电机控制器连接的IGBT,所述控制单元的第一连接端与所述检测单元连接,所述控制单元的第二连接端通过所述高低压隔离单元与所述最佳门级电阻值调节单元连接,所述IGBT与所述最佳门级电阻值调节单元连接,其中,Another aspect of the present invention provides a system for adaptively changing the IGBT gate-level resistance value of a motor controller, the system includes a control unit, a detection unit, a high-low voltage isolation unit, an optimal gate-level resistance value adjustment unit, and a control unit with the motor The IGBT connected to the controller, the first connection end of the control unit is connected to the detection unit, and the second connection end of the control unit is connected to the optimum gate resistance value adjustment unit through the high and low voltage isolation unit , the IGBT is connected to the optimal gate-level resistance value adjustment unit, wherein,

所述检测单元,用于测定当前电机控制器的工况;The detection unit is used to determine the current working condition of the motor controller;

所述控制单元,根据所述“工况-最佳门级电阻值”对应关系确定当前工况对应的最佳门级电阻值,并向最佳门级电阻值调节单元发出调整门级电阻值的控制信号;The control unit determines the optimal gate-level resistance value corresponding to the current working condition according to the corresponding relationship of the "working condition-optimal gate-level resistance value", and sends an adjusted gate-level resistance value to the optimal gate-level resistance value adjustment unit. control signal;

所述最佳门级电阻值调节单元,根据所述控制单元的控制信号,将IGBT的门级电阻值调整为步骤(2)所述的最佳门级电阻值。The optimum gate-level resistance value adjusting unit adjusts the gate-level resistance value of the IGBT to the optimum gate-level resistance value described in step (2) according to the control signal of the control unit.

作为优选,所述最佳门级电阻值调节单元,包括多个相互并联的基准电阻,每个基准电阻均串联有一电性开关,根据所述控制单元的控制信号控制开启或关闭所述电性开关来调整连接入电路的基准电阻,从而将IGBT的门级电阻值调整为最佳门级电阻值。Preferably, the optimal gate-level resistance value adjustment unit includes a plurality of reference resistors connected in parallel with each other, and each reference resistor is connected in series with an electrical switch, which is controlled to be turned on or off according to a control signal of the control unit The switch is used to adjust the reference resistance connected to the circuit, so as to adjust the gate resistance value of the IGBT to the optimum gate resistance value.

作为优选,所述电性开关包括MOS管。Preferably, the electrical switch includes a MOS transistor.

本发明的再一个方面,提供一种电机控制器,包括如上所述的自适应改变电机控制器的IGBT门级电阻值的系统。In yet another aspect of the present invention, a motor controller is provided, including the above-mentioned system for adaptively changing the IGBT gate resistance value of the motor controller.

与现有技术相比,本发明的有益效果为:Compared with the prior art, the beneficial effects of the present invention are:

本发明通过自适应地将IGBT门级电阻值调整为对应于当前工况的最佳门级电阻值,该最佳门级电阻值,既避免了门级电路过小,保证了IGBT的安全运行;也避免了门级电阻过大,可通过选取最佳门级电阻之,最大化地降低IGBT的损耗,提高IGBT的工作效率,同时提高了IGBT的电控功率密度。The invention adaptively adjusts the IGBT gate-level resistance value to the optimum gate-level resistance value corresponding to the current working condition. The optimum gate-level resistance value not only prevents the gate-level circuit from being too small, but also ensures the safe operation of the IGBT. It also avoids the gate-level resistance from being too large. By selecting the best gate-level resistance, the loss of the IGBT can be minimized, the working efficiency of the IGBT can be improved, and the electrical control power density of the IGBT can be improved at the same time.

附图说明Description of drawings

构成本申请的一部分的说明书附图用来提供对本申请的进一步理解,本申请的示意性实施例及其说明用于解释本申请,并不构成对本申请的限定。The accompanying drawings that constitute a part of the present application are used to provide further understanding of the present application, and the schematic embodiments and descriptions of the present application are used to explain the present application and do not constitute a limitation to the present application.

图1是现有技术中IGBT的驱动电路图;1 is a drive circuit diagram of an IGBT in the prior art;

图2是本发明实施例中在IGBT当前工况下,确定其最佳门级电阻值的方法的流程图;2 is a flowchart of a method for determining an optimal gate-level resistance value of an IGBT under current operating conditions in an embodiment of the present invention;

图3是本发明实施例中应用于电机驱动时,IGBT的驱动电路图。FIG. 3 is a driving circuit diagram of an IGBT when applied to motor driving in an embodiment of the present invention.

具体实施方式Detailed ways

应该指出,以下详细说明都是例示性的,旨在对本申请提供进一步的说明。除非另有指明,本文使用的所有技术和科学术语具有与本申请所属技术领域的普通技术人员通常理解的相同含义。It should be noted that the following detailed description is exemplary and intended to provide further explanation of the application. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

需要注意的是,这里所使用的术语仅是为了描述具体实施方式,而非意图限制根据本申请的示例性实施方式。如在这里所使用的,除非上下文另外明确指出,否则单数形式也意图包括复数形式,此外,还应当理解的是,当在本说明书中使用术语“包含”和/或“包括”时,其指明存在特征、步骤、操作、器件、部件和/或它们的组合。It should be noted that the terminology used herein is for the purpose of describing specific embodiments only, and is not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural as well, furthermore, it is to be understood that when the terms "comprising" and/or "including" are used in this specification, it indicates that There are features, steps, operations, devices, components and/or combinations thereof.

此外,在本发明的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。Furthermore, in the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front" , "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "clockwise", "counterclockwise", etc. indicate the orientation or position relationship as Based on the orientation or positional relationship shown in the drawings, it is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood to limit the present invention.

此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中,除非另有说明,“多个”的含义是两个或两个以上,除非另有明确的限定。In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as "first" or "second" may expressly or implicitly include one or more of that feature. In the description of the present invention, unless otherwise specified, "plurality" means two or more, unless otherwise expressly defined.

在本发明中,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。In the present invention, unless otherwise expressly specified and limited, the terms "installed", "connected", "connected", "fixed" and other terms should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection , or integrally connected; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or the internal communication between the two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

在本发明中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。In the present invention, unless otherwise expressly specified and limited, a first feature "on" or "under" a second feature may include the first and second features in direct contact, or may include the first and second features Not directly but through additional features between them. Also, the first feature being "above", "over" and "above" the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is level higher than the second feature. The first feature is "below", "below" and "below" the second feature includes the first feature being directly below and diagonally below the second feature, or simply means that the first feature has a lower level than the second feature.

下面结合附图与实施例对本发明作进一步说明:Below in conjunction with accompanying drawing and embodiment, the present invention will be further described:

本实施例提供一种自适应改变电机控制器的IGBT门级电阻值的方法,该方法包括如下步骤:This embodiment provides a method for adaptively changing an IGBT gate-level resistance value of a motor controller, and the method includes the following steps:

(1)检测电机控制器在不同工况下所对应的最佳门级电阻值,获取“工况-最佳门级电阻值”对应关系;(1) Detect the optimal gate-level resistance value corresponding to the motor controller under different working conditions, and obtain the corresponding relationship of "working condition-optimal gate-level resistance value";

(2)在运行状态下,测定当前电机控制器工况,根据所述“工况-最佳门级电阻值”对应关系确定当前工况对应的最佳门级电阻值;(2) In the running state, measure the current working condition of the motor controller, and determine the optimum gate-level resistance value corresponding to the current working condition according to the corresponding relationship of the “working condition-optimal gate-level resistance value”;

(3)将IGBT驱动电路中的门级电阻值调整为步骤(2)所述的最佳门级电阻值。(3) Adjust the gate-level resistance value in the IGBT drive circuit to the optimum gate-level resistance value described in step (2).

作为一种较优的实施方案,如图2所示,步骤(1)中,检测电机控制器的不同工况所对应的最佳门级电阻值包括如下步骤:As a preferred embodiment, as shown in Figure 2, in step (1), detecting the optimal gate-level resistance value corresponding to different working conditions of the motor controller includes the following steps:

1)设定初始工况,并预设该初始工况下的门级电阻初始值;1) Set the initial working condition, and preset the initial value of gate resistance under the initial working condition;

2)判断在当前门级电阻值下,IGBT是否超出安全工作区;2) Determine whether the IGBT exceeds the safe working area under the current gate resistance value;

若是,则增大门级电阻值,则重新判断IGBT是否超出安全工作区;If so, increase the gate-level resistance value, and then re-judg whether the IGBT exceeds the safe working area;

若不是,则判断其是否满足降额标准,若满足,则将当前门级电阻值作为当前工况下的最佳门级电阻值,若不满足,则减小门级电阻值,直至其减小至满足IGBT降额标准的最小值,将该最小值作为最佳门级电阻值;If not, judge whether it meets the derating standard. If so, take the current gate-level resistance value as the best gate-level resistance value under the current working condition. If not, reduce the gate-level resistance value until it decreases. As small as the minimum value that meets the IGBT derating standard, the minimum value is used as the optimal gate-level resistance value;

调整工况,重复步骤1)-2),直至完成对所有工况的最佳门级电阻值的检测。Adjust the working conditions and repeat steps 1)-2) until the detection of the optimal gate-level resistance value for all working conditions is completed.

作为一种较优的实施方案,所述IGBT的降额标准为不高于满额的80%。As a preferred embodiment, the derating standard of the IGBT is not higher than 80% of the full capacity.

作为一种较优的实施方案,所述“工况-最佳门级电阻值”对应关系为“工况-最佳门级电阻值”关系表或“工况-最佳门级电阻值”关系曲线。As a preferred embodiment, the corresponding relationship of "working condition-optimal gate-level resistance value" is a relation table of "working condition-optimal gate-level resistance value" or "working condition-optimal gate-level resistance value" Relationship lines.

作为一种较优的实施方案,步骤(1)中,所述工况包括电机控制器母线的电压值和环境温度值。As a preferred embodiment, in step (1), the working conditions include the voltage value of the motor controller bus and the ambient temperature value.

作为一种较优的实施方案,将IGBT的门级电阻值调整为步骤(2)所述的最佳门级电阻值的方法为:根据所述最佳门级电阻值,调整并联于IGBT门级驱动电路中门级电阻的数量。As a preferred embodiment, the method for adjusting the gate resistance value of the IGBT to the optimal gate resistance value described in step (2) is: according to the optimal gate resistance value, adjust the gate resistance value connected in parallel with the IGBT gate. The number of gate resistors in the stage driver circuit.

本实施例还提供一种自适应改变电机控制器的IGBT门级电阻值的系统,该系统包括控制单元、检测单元、高低压隔离单元、最佳门级电阻值调节单元及与电机控制器连接的IGBT,所述控制单元的第一连接端与所述检测单元连接,所述控制单元的第二连接端通过所述高低压隔离单元与所述最佳门级电阻值调节单元连接,所述IGBT与所述最佳门级电阻值调节单元连接,其中,This embodiment also provides a system for adaptively changing the IGBT gate-level resistance value of the motor controller, the system includes a control unit, a detection unit, a high-low voltage isolation unit, an optimal gate-level resistance value adjustment unit, and a connection with the motor controller IGBT, the first connection end of the control unit is connected to the detection unit, the second connection end of the control unit is connected to the optimum gate resistance value adjustment unit through the high and low voltage isolation unit, and the The IGBT is connected to the optimal gate-level resistance value adjustment unit, wherein,

所述检测单元,用于测定当前电机控制器的工况;The detection unit is used to determine the current working condition of the motor controller;

所述控制单元,根据所述“工况-最佳门级电阻值”对应关系确定当前工况对应的最佳门级电阻值,并向最佳门级电阻值调节单元发出调整门级电阻值的控制信号;The control unit determines the optimal gate-level resistance value corresponding to the current working condition according to the corresponding relationship of the "working condition-optimal gate-level resistance value", and sends an adjusted gate-level resistance value to the optimal gate-level resistance value adjustment unit. control signal;

所述最佳门级电阻值调节单元,根据所述控制单元的控制信号,将IGBT的门级电阻值调整为步骤(2)所述的最佳门级电阻值。The optimum gate-level resistance value adjusting unit adjusts the gate-level resistance value of the IGBT to the optimum gate-level resistance value described in step (2) according to the control signal of the control unit.

作为一种较优的实施方案,所述最佳门级电阻值调节单元,包括多个相互并联的基准电阻,每个基准电阻均串联有一电性开关,根据所述控制单元的控制信号控制开启或关闭所述电性开关来调整连接入电路的基准电阻,从而将IGBT的门级电阻值调整为最佳门级电阻值。As a preferred embodiment, the optimal gate-level resistance value adjustment unit includes a plurality of reference resistors connected in parallel with each other, and each reference resistor is connected in series with an electrical switch, which is controlled to be turned on according to the control signal of the control unit Or turn off the electrical switch to adjust the reference resistance connected to the circuit, so as to adjust the gate resistance value of the IGBT to the optimum gate resistance value.

作为一种较优的实施方案,所述电性开关包括MOS管。As a preferred embodiment, the electrical switch includes a MOS transistor.

上述系统应用于电机驱动过程中时,对应的驱动电路包括:低压侧电路及高压侧电路,其中低压侧电路与高压侧电路之间通过隔离器隔离,具体地,如图3所示:When the above system is applied to the motor driving process, the corresponding driving circuit includes: a low-voltage side circuit and a high-voltage side circuit, wherein the low-voltage side circuit and the high-voltage side circuit are isolated by an isolator, specifically, as shown in Figure 3:

低压侧包括:检测电路、控制单元U1(图3中以功能表示为“TAB查询模块”及“控制信号模块”),其中,检测电路用于检测当前电机控制器的工况(母线电压、环境温度等,其中,母线电压检测是采用电阻分压原理检测BUS+和BUS-之间电压值;环境温度是采用NTC热敏电阻感应或检测);TAB查询模块根据电机控制器当前的工况确定其对应的最佳门级电阻值;控制信号模块内存储有数学运算表,用于根据需求的最佳电阻产生执行电路的组合,即把需要的最佳门级电阻值通过一组基准值表示出来,如:基准值是:a=1,b=5,c=10,d=20,f=30。若当前确定的最佳门级电阻值是36,则36=1*a+1*b+c*0+d*0+1*f。The low-voltage side includes: a detection circuit and a control unit U1 (represented by functions as "TAB query module" and "control signal module" in Figure 3), wherein the detection circuit is used to detect the current working conditions of the motor controller (bus voltage, environment Among them, the bus voltage detection is to detect the voltage value between BUS+ and BUS- using the principle of resistance division; the ambient temperature is to be sensed or detected by the NTC thermistor); the TAB query module determines the The corresponding optimal gate-level resistance value; a mathematical operation table is stored in the control signal module, which is used to generate a combination of execution circuits according to the required optimal resistance, that is, the required optimal gate-level resistance value is expressed by a set of reference values. , such as: the reference value is: a=1, b=5, c=10, d=20, f=30. If the currently determined optimal gate resistance value is 36, then 36=1*a+1*b+c*0+d*0+1*f.

信号控制模块根据电机控制器工况对应的最佳门级电阻值确定最佳门级电阻值调节单元中各电性开关的开闭情况,由图3可知,该控制单元U1分别连接IGBT的驱动芯片U2和高低压隔离芯片U3、U4,且最佳门级电阻调节单元中:B1-Bn、T1-Tn为电性开关,Rb1-Rbn、Rt1-Rtn以及R1、R2是基准电阻;由图3可知,与高低压隔离芯片连接的各个基准电阻(Rb1-Rbn、Rt1-Rtn)之间相互并联,同时,每个基准电阻又与一电性开关串联,这样,最佳门级电阻调节单元可根据所述控制单元的控制信号控制开启或关闭所述电性开关来调整连接入电路的基准电阻,即通过不同电性开关的开闭组合,对门级电阻值进行自适应更改,从而将IGBT的门级电阻值调整为最佳门级电阻值。The signal control module determines the opening and closing of each electrical switch in the optimal gate resistance value adjustment unit according to the optimal gate resistance value corresponding to the working condition of the motor controller. It can be seen from Figure 3 that the control unit U1 is connected to the drive of the IGBT respectively. Chip U2 and high and low voltage isolation chips U3 and U4, and in the optimal gate-level resistance adjustment unit: B 1 -B n , T 1 -T n are electrical switches, Rb1-Rbn, Rt1-Rtn and R1, R2 are benchmarks It can be seen from Figure 3 that the reference resistors (Rb1-Rbn, Rt1-Rtn) connected to the high and low voltage isolation chips are connected in parallel with each other, and at the same time, each reference resistor is connected in series with an electrical switch, so that the optimal gate The stage resistance adjustment unit can control to open or close the electrical switch according to the control signal of the control unit to adjust the reference resistance connected to the circuit, that is, through the opening and closing combination of different electrical switches, the gate resistance value can be adaptively changed , so as to adjust the gate-level resistance value of the IGBT to the optimum gate-level resistance value.

此外,上述的TAB查询模块中存储由“工况-最佳门级电阻值”对应关系,该对应关系可以为表格的形式,也可以为拟合曲线的形式。In addition, the above-mentioned TAB query module stores the corresponding relationship of "working condition-optimal gate-level resistance value", and the corresponding relationship may be in the form of a table or a fitted curve.

本实施例还提供一种电机控制器,包括如上所述的自适应改变电机控制器的IGBT门级电阻值的系统。This embodiment also provides a motor controller, including the above-mentioned system for adaptively changing the IGBT gate resistance value of the motor controller.

本发明通过自适应地将IGBT门级电阻值调整为对应于当前工况的最佳门级电阻值,该最佳门级电阻值,既避免了门级电路过小,保证了IGBT的安全运行;也避免了门级电阻过大,最大化地降低IGBT的损耗,提高IGBT的工作效率,同时提高了IGBT的电控功率密度。The invention adaptively adjusts the IGBT gate-level resistance value to the optimum gate-level resistance value corresponding to the current working condition. The optimum gate-level resistance value not only prevents the gate-level circuit from being too small, but also ensures the safe operation of the IGBT. ; It also avoids the gate-level resistance from being too large, maximally reduces the loss of the IGBT, improves the working efficiency of the IGBT, and at the same time improves the electrical control power density of the IGBT.

在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。In the description of this specification, description with reference to the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples", etc., mean specific features described in connection with the embodiment or example , structure, material or feature is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

尽管上面已经示出和描述了本发明的实施例,可以理解的是,上述实施例是示例性的,不能理解为对本发明的限制,本领域的普通技术人员在不脱离本发明的原理和宗旨的情况下在本发明的范围内可以对上述实施例进行变化、修改、替换和变型,凡是依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。Although the embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and those of ordinary skill in the art will not depart from the principles and spirit of the present invention Under the circumstance of the present invention, the above-described embodiments can be changed, modified, replaced and modified within the scope of the present invention, and any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention still belong to the present invention within the scope of the technical solution.

Claims (10)

1.一种自适应改变电机控制器的IGBT门级电阻值的方法,其特征在于,包括如下步骤:1. a method for adaptively changing the IGBT gate-level resistance value of a motor controller, is characterized in that, comprises the steps: (1)检测电机控制器在不同工况下所对应的最佳门级电阻值,获取“工况-最佳门级电阻值”对应关系;(1) Detect the optimal gate-level resistance value corresponding to the motor controller under different working conditions, and obtain the corresponding relationship of "working condition-optimal gate-level resistance value"; (2)在运行状态下,测定当前电机控制器工况,根据所述“工况-最佳门级电阻值”对应关系确定当前工况对应的最佳门级电阻值;(2) In the running state, measure the current working condition of the motor controller, and determine the optimum gate-level resistance value corresponding to the current working condition according to the corresponding relationship of the “working condition-optimal gate-level resistance value”; (3)将IGBT驱动电路中的门级电阻值调整为步骤(2)所述的最佳门级电阻值。(3) Adjust the gate-level resistance value in the IGBT drive circuit to the optimum gate-level resistance value described in step (2). 2.根据权利要求1所述的一种自适应改变电机控制器的IGBT门级电阻值的方法,其特征在于,步骤(1)中,检测电机控制器的不同工况所对应的最佳门级电阻值包括如下步骤:2. The method for adaptively changing the IGBT gate-level resistance value of the motor controller according to claim 1, wherein in step (1), the optimal gate corresponding to different operating conditions of the motor controller is detected Stage resistance value includes the following steps: 1)设定初始工况,并预设该初始工况下的门级电阻初始值;1) Set the initial working condition, and preset the initial value of gate resistance under the initial working condition; 2)判断在当前门级电阻值下,IGBT是否超出安全工作区;2) Determine whether the IGBT exceeds the safe working area under the current gate resistance value; 若是,则增大门级电阻值,则重新判断IGBT是否超出安全工作区;If so, increase the gate-level resistance value, and then re-judg whether the IGBT exceeds the safe working area; 若不是,则判断其是否满足降额标准,若满足,则将当前门级电阻值作为当前工况下的最佳门级电阻值,若不满足,则减小门级电阻值,直至其减小至满足IGBT降额标准的最小值,将该最小值作为最佳门级电阻值;If not, judge whether it meets the derating standard. If so, take the current gate-level resistance value as the best gate-level resistance value under the current working condition. If not, reduce the gate-level resistance value until it decreases. As small as the minimum value that meets the IGBT derating standard, the minimum value is used as the optimal gate-level resistance value; 调整工况,重复步骤1)-2),直至完成对所有工况的最佳门级电阻值的检测。Adjust the working conditions and repeat steps 1)-2) until the detection of the optimal gate-level resistance value for all working conditions is completed. 3.根据权利要求2所述的一种自适应改变电机控制器的IGBT门级电阻值的方法,其特征在于,所述IGBT的降额标准为不高于满额的80%。3 . The method for adaptively changing the gate resistance value of the IGBT of the motor controller according to claim 2 , wherein the derating standard of the IGBT is not higher than 80% of the full rating. 4 . 4.根据权利要求1所述的一种自适应改变电机控制器的IGBT门级电阻值的方法,其特征在于,所述“工况-最佳门级电阻值”对应关系为“工况-最佳门级电阻值”关系表或“工况-最佳门级电阻值”关系曲线。4 . The method for adaptively changing the IGBT gate-level resistance value of the motor controller according to claim 1 , wherein the “working condition-optimal gate-level resistance value” corresponding relationship is “working condition- "Optimum gate resistance value" relationship table or "working condition - optimal gate resistance value" relationship curve. 5.根据权利要求1所述的一种自适应改变电机控制器的IGBT门级电阻值的方法,其特征在于,步骤(1)中,所述工况包括电机控制器母线的电压值和环境温度值。5 . The method for adaptively changing the IGBT gate resistance value of the motor controller according to claim 1 , wherein in step (1), the operating conditions include the voltage value of the motor controller bus and the environment. 6 . temperature value. 6.根据权利要求1所述的一种自适应改变电机控制器的IGBT门级电阻值的方法,其特征在于,将IGBT的门级电阻值调整为步骤(2)所述的最佳门级电阻值的方法为:根据所述最佳门级电阻值,调整并联于IGBT门级驱动电路中门级电阻的数量。6 . The method for adaptively changing the IGBT gate-level resistance value of the motor controller according to claim 1 , wherein the gate-level resistance value of the IGBT is adjusted to the optimal gate level described in step (2). 7 . The method for the resistance value is as follows: according to the optimal gate-level resistance value, adjusting the number of gate-level resistors connected in parallel in the IGBT gate-level drive circuit. 7.一种自适应改变电机控制器的IGBT门级电阻值的系统,其特征在于,包括控制单元、检测单元、高低压隔离单元、最佳门级电阻值调节单元及与电机控制器连接的IGBT,所述控制单元的第一连接端与所述检测单元连接,所述控制单元的第二连接端通过所述高低压隔离单元与所述最佳门级电阻值调节单元连接,所述IGBT与所述最佳门级电阻值调节单元连接,其中,7. A system for adaptively changing the IGBT gate-level resistance value of the motor controller, characterized in that it comprises a control unit, a detection unit, a high-low voltage isolation unit, an optimum gate-level resistance value adjustment unit and a IGBT, the first connection end of the control unit is connected to the detection unit, the second connection end of the control unit is connected to the optimum gate resistance value adjustment unit through the high and low voltage isolation unit, and the IGBT connected with the optimal gate-level resistance value adjustment unit, wherein, 所述检测单元,用于测定当前电机控制器的工况;The detection unit is used to determine the current working condition of the motor controller; 所述控制单元,根据所述“工况-最佳门级电阻值”对应关系确定当前工况对应的最佳门级电阻值,并向最佳门级电阻值调节单元发出调整门级电阻值的控制信号;The control unit determines the optimal gate-level resistance value corresponding to the current operating condition according to the corresponding relationship of the "working condition-optimal gate-level resistance value", and sends an adjusted gate-level resistance value to the optimal gate-level resistance value adjustment unit. control signal; 所述最佳门级电阻值调节单元,根据所述控制单元的控制信号,将IGBT的门级电阻值调整为步骤(2)所述的最佳门级电阻值。The optimum gate-level resistance value adjusting unit adjusts the gate-level resistance value of the IGBT to the optimum gate-level resistance value described in step (2) according to the control signal of the control unit. 8.根据权利要求7所述的一种自适应改变电机控制器的IGBT门级电阻值的系统,其特征在于,所述最佳门级电阻值调节单元,包括多个相互并联的基准电阻,每个基准电阻均串联有一电性开关,根据所述控制单元的控制信号控制开启或关闭所述电性开关来调整连接入电路的基准电阻,从而将IGBT的门级电阻值调整为最佳门级电阻值。8. The system for adaptively changing the IGBT gate-level resistance value of the motor controller according to claim 7, wherein the optimal gate-level resistance value adjustment unit comprises a plurality of reference resistors connected in parallel with each other, An electrical switch is connected in series with each reference resistor, and the electrical switch is controlled to be turned on or off according to the control signal of the control unit to adjust the reference resistor connected to the circuit, so as to adjust the gate resistance value of the IGBT to the optimal gate stage resistance value. 9.根据权利要求8所述的一种自适应改变电机控制器的IGBT门级电阻值的系统,其特征在于,所述电性开关包括MOS管。9 . The system for adaptively changing the IGBT gate resistance value of the motor controller according to claim 8 , wherein the electrical switch comprises a MOS transistor. 10 . 10.一种电机控制器,其特征在于,包括如权利要求7-9中任一项所述的自适应改变电机控制器的IGBT门级电阻值的系统。10. A motor controller, characterized by comprising the system for adaptively changing the IGBT gate-level resistance value of the motor controller according to any one of claims 7-9.
CN202010136144.5A 2020-03-02 2020-03-02 Motor controller and method and system for adaptively changing IBGT gate-level resistance value of motor controller Pending CN111245204A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119010709A (en) * 2024-10-25 2024-11-22 广汽埃安新能源汽车股份有限公司 Gate-level driving resistor determining method and gear switching method of multi-gear motor controller

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002119044A (en) * 2000-10-12 2002-04-19 Fuji Electric Co Ltd Gate drive circuit for power semiconductor device
US20050146295A1 (en) * 2004-01-07 2005-07-07 Mitsubishi Denki Kabushiki Kaisha Booster and motor controller
US20120235611A1 (en) * 2011-03-18 2012-09-20 Mitsubishi Electric Corporation Inverter controller and refrigerating and air-conditioning unit
JP2016059108A (en) * 2014-09-05 2016-04-21 株式会社東芝 Gate drive circuit, semiconductor device, and power conversion device
CN110061480A (en) * 2019-04-17 2019-07-26 西安铁山轨道装备科技有限公司 A kind of full-time protection driver of rail traffic IGBT

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002119044A (en) * 2000-10-12 2002-04-19 Fuji Electric Co Ltd Gate drive circuit for power semiconductor device
US20050146295A1 (en) * 2004-01-07 2005-07-07 Mitsubishi Denki Kabushiki Kaisha Booster and motor controller
US20120235611A1 (en) * 2011-03-18 2012-09-20 Mitsubishi Electric Corporation Inverter controller and refrigerating and air-conditioning unit
JP2016059108A (en) * 2014-09-05 2016-04-21 株式会社東芝 Gate drive circuit, semiconductor device, and power conversion device
CN110061480A (en) * 2019-04-17 2019-07-26 西安铁山轨道装备科技有限公司 A kind of full-time protection driver of rail traffic IGBT

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119010709A (en) * 2024-10-25 2024-11-22 广汽埃安新能源汽车股份有限公司 Gate-level driving resistor determining method and gear switching method of multi-gear motor controller
CN119010709B (en) * 2024-10-25 2025-06-20 广汽埃安新能源汽车股份有限公司 Gate-level drive resistance determination method and gear switching method of multi-speed motor controller

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