CN111443062B - Device and method for detecting transient refractive index ultrafast of semiconductor material - Google Patents
Device and method for detecting transient refractive index ultrafast of semiconductor material Download PDFInfo
- Publication number
- CN111443062B CN111443062B CN202010339529.1A CN202010339529A CN111443062B CN 111443062 B CN111443062 B CN 111443062B CN 202010339529 A CN202010339529 A CN 202010339529A CN 111443062 B CN111443062 B CN 111443062B
- Authority
- CN
- China
- Prior art keywords
- fast detection
- semiconductor
- ultra
- probe light
- detection chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 125
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000001052 transient effect Effects 0.000 title claims abstract description 31
- 239000000463 material Substances 0.000 title claims abstract description 30
- 238000001514 detection method Methods 0.000 claims abstract description 108
- 239000000523 sample Substances 0.000 claims abstract description 94
- 230000004044 response Effects 0.000 claims abstract description 37
- 230000008859 change Effects 0.000 claims abstract description 33
- 230000005284 excitation Effects 0.000 claims abstract description 29
- 230000008569 process Effects 0.000 claims abstract description 21
- 238000001228 spectrum Methods 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000006185 dispersion Substances 0.000 claims description 14
- 230000003595 spectral effect Effects 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000003111 delayed effect Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000007787 solid Substances 0.000 description 14
- 238000003384 imaging method Methods 0.000 description 13
- 238000012360 testing method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 4
- 239000000306 component Substances 0.000 description 3
- 239000008358 core component Substances 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001448 refractive index detection Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
- G01N2021/1725—Modulation of properties by light, e.g. photoreflectance
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The invention discloses a device and a method for detecting transient refractive index ultrafast of a semiconductor material, which solve the problem that the existing method for measuring refractive index change of the semiconductor cannot meet the requirements for pulse incidence and pulse response characteristic detection. The device comprises a high-power pulse laser, a first beam splitter, a pulse X-ray excitation unit, a probe light modulation and control unit, a second beam splitter and a signal reading unit; the first beam splitter is positioned in the emergent direction of the pulse laser and divides the laser beam generated by the pulse laser into a beam A and a beam B; the pulse X-ray excitation unit is positioned in the emergent direction of the A beam and used for generating X-rays for the pulse laser, the probe light adjustment and control unit is positioned in the emergent direction of the B beam and used for generating probe light, and the probe light and the X-rays reach the surface of the semiconductor ultra-fast detection core at the same time; the refractive index of the semiconductor ultra-fast detection chip is modulated by the X-rays, so that the spectrum intensity of probe light is changed; the signal reading unit detects the light spectrum intensity change of the probe to obtain the response process of the chip to X-rays.
Description
Technical Field
The invention relates to a semiconductor material transient refractive index change detection technology, in particular to a semiconductor material transient refractive index ultrafast detection device and method based on a stepping synchronous spectrum probe.
Background
In inertial confinement fusion (Inertial confinement fusion, ICF) experiments, the size of the target pellet is only a few millimeters and the implosion process typically lasts only a few hundred picoseconds, for high-time, spatially resolved technical diagnosis of the process, the detection device is required to have a time resolution on the order of picoseconds and a spatial resolution on the order of micrometers.
The full-optical solid ultrafast imaging technology based on photoinduced refractive index change is a novel ultrafast diagnosis technology in recent years, and the ultrafast imaging capability can realize spatial resolution of micron order and time resolution of picosecond order, thereby completely meeting the requirements of ICF observation. K.L.Baker et al in the Lifromo laboratory in 2013 have established transient phase grating type all-optical solid ultrafast framing cameras based on photoinduced refractive index changes, and have realized time-resolved X-ray responses on the order of picoseconds.
As an important core component in the all-optical solid ultrafast imaging technology based on photoinduced refractive index change, the time response characteristics of the X-rays and other high-energy rays of the semiconductor ultrafast response chip directly determine the time resolution of the all-optical solid ultrafast imaging device. Therefore, the method for detecting the transient refractive index change of the semiconductor material has very important theoretical research and engineering practice significance when carrying out ultra-fast detection of the transient refractive index change of the semiconductor material, in particular to the detection of the transient refractive index change of the semiconductor material under the excitation condition of high-energy ray pulses (picoseconds and below).
The traditional semiconductor refractive index change measuring method mainly comprises a static test method and a pulse test method. The former statically marks the interaction characteristics of the semiconductor material and the X-rays by measuring the change of the refractive index of the semiconductor material before and after the X-rays with stable power are incident; the latter dynamically calibrates the time response characteristics of the semiconductor material's interaction with the X-rays by measuring the impulse response of the change in refractive index of the semiconductor material before and after incidence of a pulsed X-ray.
In practical use, the full-optical solid ultrafast imaging device needs to test the response characteristic read by the pulse probe under the incident condition of the pulse X-ray, and the two measurement methods can not meet the related detection requirements, so that development of a novel semiconductor material refractive index detection technology for chip calibration work of the full-optical solid ultrafast imaging system is urgently needed.
Disclosure of Invention
The invention provides a device and a method for detecting transient refractive index ultrafast of a semiconductor material, which aim to solve the technical problem that the existing method for measuring refractive index change of a semiconductor cannot meet the requirements of full-optical solid ultrafast imaging equipment on pulse incidence and pulse response characteristic detection.
In order to achieve the above purpose, the technical scheme provided by the invention is as follows:
The device for detecting the transient refractive index of the semiconductor material is characterized by comprising the following components: the device comprises a high-power pulse laser, a first beam splitter, a pulse X-ray excitation unit, a probe light modulation and control unit, a second beam splitter and a signal reading unit;
the high-power pulse laser is used for generating picosecond-level short-pulse laser, and the wavelength of the pulse laser is larger than the absorption wavelength of the semiconductor ultra-fast detection chip to be detected;
the first beam splitter is positioned in the emergent direction of the high-power pulse laser and divides the laser beam into two beams, namely an A beam and a B beam, wherein the energy of the A beam is larger than that of the B beam;
The pulse X-ray excitation unit is positioned in the emergent direction of the A beam, and is used for generating X-rays by fixed time delay, optical focusing and excitation of pulse laser and making the generated X-rays incident to the upper surface of the semiconductor ultra-fast detection chip to be detected;
The probe light regulating and controlling unit is positioned in the emergent direction of the B light beam, is used for generating probe light by expanding the controllable time delay and dispersion time of the pulse laser, and reflects the probe light to the lower surface of the semiconductor ultra-fast detection chip to be detected through the second beam splitter, and the probe light and the X-rays reach the surface of the semiconductor ultra-fast detection chip to be detected at the same time;
The X-ray is incident to the semiconductor ultra-fast detection chip to be detected, the refractive index of the semiconductor ultra-fast detection chip to be detected is modulated, and then the spectrum intensity of probe light incident to the semiconductor ultra-fast detection chip is changed;
the signal reading unit is used for collecting probe light reflected by the semiconductor ultra-fast detection chip to be detected and transmitted by the second beam splitter, and obtaining the response process of the semiconductor ultra-fast detection chip to be detected to X rays by detecting the spectral intensity change of the probe light.
Further, the pulsed X-ray excitation unit comprises a time fixed delay and focusing optical system and a metal target which are sequentially arranged along the transmission direction of the A beam;
The A beam is incident to the surface of a metal target at an angle of 45 degrees after time delay and optical focusing of a time fixed delay and focusing optical system, and the metal target is used for incidence of generated X-rays to the upper surface of the semiconductor ultra-fast detection chip to be detected.
Further, the metal target is a metal gold target, and X-ray pulses with the characteristic wavelength of 2.4keV are generated;
The metal target is a metal titanium target, and X-ray pulses with characteristic wavelength of 4.8keV are generated;
The metal target is a metal copper target, and X-ray pulses with the characteristic wavelength of 8keV are generated.
Further, the probe light modulation and control unit comprises a reflecting mirror, an adjustable stepping delay optical system and a dispersion broadening crystal which are sequentially arranged along the transmission direction of the B light beam.
Further, the semiconductor ultra-fast detection chip further comprises an anti-reflection film which is arranged on the upper surface of the semiconductor ultra-fast detection chip to be detected and is used for reflecting the probe light, and an anti-reflection film which is arranged on the lower surface of the semiconductor ultra-fast detection chip to be detected and is used for reflecting the probe light.
Further, the light beam A is transmitted light, and the energy ratio is more than 99%;
The B beam is reflected light.
Further, the signal reading unit comprises a spectrometer and a data processor;
the spectrometer is used for receiving probe light reflected by the semiconductor ultra-fast detection chip to be detected and transmitted by the second beam splitter;
And the data processor obtains the response time of the ultra-fast detection chip of the semiconductor to be detected to X rays according to the spectral intensity change of the probe light received by the spectrometer.
Meanwhile, the invention also provides a method for detecting the transient refractive index ultrafast of the semiconductor material, which is characterized by comprising the following steps:
1) The high-power pulse laser generates picosecond-level short-pulse laser, and is divided into two beams, namely an A beam and a B beam, through a first beam splitter;
2) The A beam is incident to a pulse X-ray excitation unit, is subjected to time delay and optical focusing by a time fixed delay and focusing optical system, is incident to the surface of a metal target at an angle of 45 DEG, is excited on the surface of the target to generate X-rays, and is incident to the upper surface of a semiconductor ultra-fast detection chip to be detected;
The B light beam is incident to the probe light modulation and control unit, is reflected by the reflecting mirror, delayed by the adjustable stepping delay optical system, and expanded by the chromatic dispersion, and then is reflected by the second beam splitter to the lower surface of the semiconductor ultra-fast detection chip to be detected;
Simultaneously, the probe light and the X-rays reach the surface of the ultra-fast detection chip of the semiconductor to be detected at the same time by adjusting the adjustable stepping delay optical system;
3) The method comprises the steps that the refractive index of a semiconductor ultra-fast detection chip to be detected is modulated by X rays, the response process of the semiconductor ultra-fast detection chip to be detected to the X rays is synchronously incident into a time-sequence probe light pulse in the semiconductor ultra-fast detection chip to be detected, namely, the spectrum intensity of probe light incident into the semiconductor ultra-fast detection chip is changed;
4) The signal reading unit receives the probe light reflected by the semiconductor ultra-fast detection chip to be detected and transmitted by the second beam splitter, and obtains the response process of the semiconductor ultra-fast detection chip to be detected to X rays by detecting the spectral intensity change of the probe light.
Compared with the prior art, the invention has the advantages that:
The invention discloses a semiconductor material transient refractive index ultrafast detection device and a method, which adopt a mode of homologous laser shunt excitation, pulse laser generated by a high-power pulse laser is divided into two paths, one path is excited to generate X rays, the other path is used as probe light for measuring, the two paths reach the surface of a semiconductor ultrafast detection chip at the same time, the refractive index of the semiconductor ultrafast detection chip is modulated by the X rays, the response process of the semiconductor ultrafast detection chip to the X rays is synchronously incident into a time-sequence probe light pulse in the semiconductor ultrafast detection chip, the spectral intensity of probe light incident into the semiconductor ultrafast detection chip is changed, the spectral intensity change of probe light is acquired through a signal reading unit, the response process of the semiconductor ultrafast detection chip to be detected to the X rays can be obtained, the detection and calibration of the transient refractive index change of a core component semiconductor ultrafast response chip of an all-optical solid ultrafast imaging technology are realized, the test process is similar to the working principle of the all-solid ultrafast imaging technology, the pulse signal and the pulse probe reading function can truly reflect the working characteristics of an all-solid ultrafast imaging system; the technical scheme of generating the X-ray pulse signal by high-energy laser pulse excitation solves the problem of synchronization of the X-ray pulse and the probe light pulse in the transient refractive index test process of the semiconductor ultrafast response chip.
Drawings
FIG. 1 is a schematic diagram of the operation of existing all-optical solid ultrafast imaging;
In fig. 1, the reference numerals are as follows:
The device comprises a 01-pulse laser light source, a 02-pulse chirping optical system, a 03-reflecting mirror, a 04-semi-transparent semi-reflecting mirror, a 05-semiconductor ultra-fast detection chip and a 06-wavelength light splitting system;
FIG. 2 is a schematic diagram of a device for detecting transient refractive index of a semiconductor material according to the present invention;
FIG. 3 is a schematic diagram of the principle of pulsed X-rays generated by a metal target in the semiconductor material transient refractive index ultra-fast detection device of the present invention;
FIG. 4 is a schematic diagram of the transient refractive index test principle of the ultra-fast detection chip of the semiconductor to be tested;
In fig. 2 to 4, reference numerals are as follows:
The laser comprises a 1-high-power pulse laser, a 2-first beam splitter, a 3-time fixed delay and focusing optical system, a 4-metal target, a 5-semiconductor ultrafast detection chip, a 6-reflector, a 7-adjustable stepping delay optical system, an 8-dispersion broadening crystal, a 9-second beam splitter, a 10-signal reading unit, an 11-pulse X-ray excitation unit, a 12-probe light modulation unit, a 13-reflection enhancement film and a 14-reflection enhancement film.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
As shown in FIG. 1, the working principle diagram of the full-optical solid ultrafast imaging mainly comprises a pulse laser light source 01, a pulse chirping optical system 02, a reflecting mirror 03, a semi-transparent semi-reflecting mirror 04, a semiconductor ultrafast detection chip 05 and a wavelength light splitting system 06, wherein the core detection process is a beam of chirped pulse probe light, and a beam of X-ray pulse image is measured. In order to better simulate the working characteristics of an all-optical solid ultrafast imaging system and realize a detection mode of pulse excitation and pulse response, the invention provides a semiconductor transient refractive index change detection scheme based on homologous pulses, and the detection of a semiconductor ultrafast detection chip is carried out to realize the detection of the pulse response characteristic of pulse incidence.
As shown in fig. 2, an ultrafast detection device for transient refractive index of semiconductor material comprises a high-power pulse laser 1, a first beam splitter 2, a pulse X-ray excitation unit 11, a probe light modulation unit 12, a second beam splitter 9 and a signal readout unit 10, and can achieve the purpose of detecting the characteristics of pulse incidence (signal) and pulse response (probe).
The main components of the detection device of the embodiment are as follows:
1) High power pulse laser 1
The high-power pulse laser 1 generates picosecond-order short-pulse laser, so that the requirements of exciting X-rays and probe testing can be met, the pulse power of the laser needs to be high enough, the single-pulse energy of the laser needs to reach the T watt level, and the wavelength is larger than the absorption wavelength of the semiconductor ultra-fast detection chip 5, namely, the laser is not absorbed by the chip.
The laser generated by the high-power pulse laser 1 is divided into an A beam and a B beam by the first beam splitter 2, wherein the A beam is used for excitation and generating X-ray pulses and is used for simulating ultra-short pulse X-ray signals to be detected; the B light beam is used as probe light for reading the transient state information of the X-ray pulse;
Wherein, the A beam is used for exciting the metal target to generate pulse X-rays (signal light), the energy is higher than about 99%, the B beam is used as measuring laser (probe light), the energy is lower than about 1%;
2) Pulsed X-ray excitation unit 11
The pulsed X-ray excitation unit 11 mainly comprises a time-fixed delay and focusing optical system 3 and a metal target 4 which are sequentially arranged along the transmission direction of the A beam, mainly realizes the functions of time delay (coarse delay control), optical focusing, excitation of the incident light energy pulsed laser, generation of X-rays and the like, and aims the generated X-rays at the upper surface of the semiconductor ultra-fast detection chip 5.
As shown in fig. 3, the basic principle of the laser plasma excitation X-ray technology is as follows: when a high-intensity laser pulse is focused on the metal target 4 (solid target), the surface of the target is rapidly ionized to form a high-temperature high-density plasma, and then X-rays are emitted. X-ray emission is related to target materials, different targets can obtain X-rays with different energies, and by changing the metal targets, X-rays with different energies, such as a metal titanium target, can be correspondingly generated, and X-ray pulses with characteristic wavelength of 4.8keV can be generated; a metallic copper target generating an X-ray pulse of a characteristic wavelength of 8 keV; a metallic gold target, an X-ray pulse with a characteristic wavelength of 2.4keV, etc.
3) Probe light modulation control unit 12
The probe light regulating and controlling unit 12 mainly comprises a reflecting mirror 6, an adjustable stepping delay optical system 7 and a dispersion broadening crystal 7, and mainly realizes the change of the transmission direction of the incident pulse laser, the controllable time delay (fine delay control), the wavelength expansion and the generation of probe light;
4) Second beam splitter 9
The second beam splitter 9 is positioned in the emergent direction of the dispersion broadening crystal 7 and is used for optical adjustment, and probe light with expanded wavelength is reflected to the lower surface of the semiconductor ultra-fast detection chip 5;
5) Signal readout unit 10
The signal reading unit 10 mainly comprises a spectrometer, a signal acquisition unit and a data processor, and mainly realizes the functions of acquiring, processing and the like of a spectrum signal returned by a semiconductor chip.
The spectrometer is used for receiving probe light reflected by the semiconductor ultrafast detection chip 5 and transmitted by the second beam splitter 9; the data processor obtains the response time of the semiconductor ultra-fast detection chip 5 to X rays according to the spectrum intensity change of the probe light received by the spectrometer.
In the embodiment, a scheme of delaying probe light by an adjustable stepping delay optical system 7 is adopted as a time standard of transient refractive index test, and the refractive index change response time precision is high. The controllable distance precision of the stepping motor in the adjustable stepping time-delay optical system 7 is deltal, so that the response time measurement precision deltat meets deltat=deltal/c Speed of light , for example, the distance precision of the stepping motor is 1um, and the theoretical precision of the refractive index change response time can reach 3fs.
The working process of the ultrafast detection device of the embodiment is as follows:
1) The high-power pulse laser 1 generates a pulse laser with a pulse width in picosecond level, and the pulse laser is divided into two parts, namely an A beam and a B beam after passing through the first beam splitter 2, wherein the energy of the A beam is larger than that of the B beam, the A beam is used for exciting the metal target 4 to generate pulse X rays (signal light), and the B beam is used as measuring laser (probe light);
2) The A beam is incident into a pulse X-ray excitation unit 11, is subjected to time delay and optical focusing by a time fixed delay and focusing optical system 3, is incident into the surface of a metal target 4 at an angle of 45 DEG, is excited on the surface of the target to generate X-rays, and the generated X-rays are irradiated onto the upper surface of a semiconductor ultra-fast detection chip 5;
the B light beam is incident to the probe light modulation and control unit 12, is reflected by the reflecting mirror 6, delayed by the adjustable stepping delay optical system 7, is dispersed and broadened by the time domain of the crystal 7, and is reflected to the lower surface of the semiconductor ultra-fast detection chip 5 by the second beam splitter 9;
Before being incident on the dispersion broadening crystal 7, the B light beam is a single pulse in time, the spectrum frequency domain is a broad spectrum, and the spectral line range is as follows: lambda 1 to lambda n; after passing through the dispersion stretching crystal 7, the B light beam generates a stretching effect in a time domain due to different group velocities of different spectral components in the dispersion crystal, and the spectral values of the stretching pulses are in one-to-one correspondence with time, namely, the spectrum values are expressed as lambda 1 corresponds to the time t 1, lambda 2 corresponds to the time t 2, … … and lambda n corresponds to the time t n;
Simultaneously, the probe light and the X-rays respectively reach the lower surface and the upper surface of the semiconductor ultra-fast detection chip 5 at the same time by adjusting the adjustable stepping time-delay optical system 7;
3) The X-ray is incident to the semiconductor ultra-fast detection chip 5, the refractive index of the semiconductor ultra-fast detection chip 5 is modulated, the response process of the semiconductor ultra-fast detection chip 5 to the X-ray is synchronously incident to the time-sequence probe light pulse in the semiconductor ultra-fast detection chip 5, and then the spectrum distribution of the probe light incident to the semiconductor ultra-fast detection chip 5 is changed, and the main process is as follows:
The probe light (B beam) is incident into the semiconductor ultra-fast detecting chip 5, and the semiconductor ultra-fast detecting chip 5 can be equivalent to an F-P cavity structure, and two surfaces of the semiconductor ultra-fast detecting chip 5 to be detected are respectively coated with reflective films with different reflection coefficients, specifically, an upper surface (i.e. an X-ray incident surface) of the semiconductor ultra-fast responding chip to be detected is coated with a high-reflectivity film (without affecting the X-ray) of the probe light, and a lower surface (the probe light incident surface) of the semiconductor ultra-fast responding chip to be detected is not coated with a film or is coated with a low-reflectivity film (i.e. a high-transmittance film of the probe light) of the probe light.
The probe light forms a stable interference field after being reflected and transmitted for a plurality of times on the front surface and the rear surface of the semiconductor ultra-fast detection chip 5. Let the initial refractive index of the chip be n 0, and the refractive index variation after the chip is modulated by X-ray be delta n. The complex amplitude of the multi-beam stable interference field of probe light is:
A＝A0(r1+t1r-2t-1eiδ+t1r-2r-1r-2t-1ei2δ+…)
＝A0{r1+t1r-2t-1eiδ[1+r-1r-2eiδ+(r-1r-2eiδ)2+…]}
Where a 0 is the original input light intensity, r 1 is the reflectivity of the incident surface 1 (front incident surface) from air into the chip (light and light to light and light dense medium), r -1 is the reflectivity of the incident surface 1 (front incident surface) from the chip into the air (light and light dense to light and light sparse medium), r -2 bit incident surface 2 (rear incident surface) from the chip into the air (light and light sparse medium), t 1 bit incident surface 1 (front incident surface) from the air into the chip (light and light sparse to light dense medium) is the transmissivity, t -1 is the transmissivity of the incident surface 1 (front incident surface) from the chip into the air (light and light dense to light sparse medium), t -2 is the transmissivity of the incident surface 2 (rear incident surface) from the chip into the air (light and light dense to light sparse medium), e iδ is the light intensity phase complex amplitude, and phase delta satisfies:
where d is the thickness of the chip, dx is the thickness of the excitation layer of the chip, and λ is the wavelength of incident light. Summing by using an equal ratio array to obtain:
In the absence of X-ray excitation, an=0, then the initial phase:
An initial light intensity distribution can be obtained:
under the excitation of X-rays, the thickness of the chip excitation layer is not easy to determine, the calculation is equivalent to the whole phase, the incident probe light enters the chip through the modulation area through the front incident surface of the chip, then is reflected through the rear incident surface, and passes through the modulation area again, so that the phase of the incident light is changed:
δx＝δ0+2Δφ
Wherein, delta x phase total change amount, delta 0 is original phase, delta phi is probe optical phase change amount after passing through a primary modulation area, and the probe optical phase change amount is brought into an optical intensity expression to obtain:
Thus, under X-ray excitation, the relative intensity change of the emitted light of the probe light is defined as
By calculation, the initial intensity A 0 can be reduced, i.e. the relative change in intensity is independent of the incident intensity and is only related to the phase change DeltaPhi produced by the X-rays.
4) The signal reading unit 10 receives the probe light reflected by the semiconductor ultra-fast detection chip 5 and transmitted by the second beam splitter 9, and obtains the response process of the semiconductor ultra-fast detection chip 5 to X rays by detecting the spectrum intensity change of the probe light.
The process is specifically described as follows:
As the probe light passes through the dispersion crystal, the probe light is unfolded in the time domain, and the wavelength information corresponds to the time domain information one by one. Namely, the B beam laser, after passing through the dispersion material, obtains approximately linear chirped pulse as the time-series probe light.
For the outgoing probe light, the spectral characteristics thereof satisfy the following formula:
A(tn)＝CA(λn)(n＝1，2，3，......)
Wherein A (t n) is the light intensity at a certain moment, A (lambda n) is the light intensity of the corresponding spectrum, and C is a characteristic constant, namely the time domain characteristic of the probe light and the spectral frequency domain characteristic realize one-to-one correspondence.
When the X-rays act on the semiconductor ultra-fast detection chip 5, the intensity of the outgoing light of the wavelength lambda t incident at that moment changes, i.e. the value of a Modulation of changes. The X-ray signal light acts on the semiconductor ultra-fast detection chip 5, the refractive index of the semiconductor ultra-fast detection chip 5 is modulated, and the response process of the semiconductor ultra-fast detection chip 5 to the X-ray pulse is synchronously read by the time-sequence probe light pulse incident on the semiconductor ultra-fast detection chip 5. Since the X-ray effect is very brief (the laser pulse is much smaller than the chip response time, the generated X-ray pulse is also much smaller than the chip response time), the time interval during which the probe light output intensity changes can be approximately equal to the chip response time.
Namely, the light with different wavelengths respectively records the refractive index change conditions of the sample at different moments, so that the spectrum distribution of the time-series probe light is changed, and the ultra-fast response process of the semiconductor ultra-fast detection chip to X-rays can be reflected by detecting the spectrum distribution of the time-series probe light, as shown in fig. 4.
Recording the region (lambda A～λB) where the spectrum changes, then the characteristic interval (t A～tB) of the time domain under the action of the X-ray can be correspondingly obtained, namely the chip response time:
T Response to ＝tB-tA＝C(λB-λA)。
the foregoing description of the preferred embodiments of the present invention is merely illustrative, and the technical solution of the present invention is not limited thereto, and any known modifications may be made by those skilled in the art based on the main technical concept of the present invention, which falls within the technical scope of the present invention.
Claims (8)
1. The utility model provides a semiconductor material transient refractive index ultrafast detection device which characterized in that: the device comprises a high-power pulse laser (1), a first beam splitter (2), a pulse X-ray excitation unit (11), a probe light regulation and control unit (12), a second beam splitter (9) and a signal reading unit (10);
The high-power pulse laser (1) is used for generating picosecond-level short-pulse laser, and the wavelength of the pulse laser is larger than the absorption wavelength of the semiconductor ultra-fast detection chip (5) to be detected;
The first beam splitter (2) is positioned in the emergent direction of the high-power pulse laser (1) and divides a laser beam into two beams, namely an A beam and a B beam, wherein the energy of the A beam is larger than that of the B beam;
the pulse X-ray excitation unit (11) is positioned in the emergent direction of the A beam, is used for generating X-rays by fixed time delay, optical focusing and excitation of pulse laser and is used for incidence of the generated X-rays on the upper surface of the semiconductor ultra-fast detection chip (5) to be detected;
The probe light regulating and controlling unit (12) is positioned in the emergent direction of the B light beam, is used for generating probe light by expanding the controllable time delay and dispersion time of the pulse laser, and reflects the probe light to the lower surface of the semiconductor ultra-fast detection chip (5) to be detected through the second beam splitting mirror (9), and the probe light and the X-ray reach the surface of the semiconductor ultra-fast detection chip to be detected at the same time;
the X-rays are incident to the semiconductor ultra-fast detection chip (5) to be detected, the refractive index of the semiconductor ultra-fast detection chip (5) to be detected is modulated, and then the spectrum intensity of probe light incident to the semiconductor ultra-fast detection chip (5) is changed;
the signal reading unit (10) is used for collecting probe light reflected by the semiconductor ultra-fast detection chip (5) to be detected and transmitted by the second beam splitting mirror (9), and obtaining the response process of the semiconductor ultra-fast detection chip (5) to be detected to X rays by detecting the spectral intensity change of the probe light.
2. The device for ultra-fast detection of transient refractive index of semiconductor material according to claim 1, wherein: the pulsed X-ray excitation unit (11) comprises a time fixed delay and focusing optical system (3) and a metal target (4) which are sequentially arranged along the transmission direction of the A beam;
The A beam is incident to the surface of a metal target (4) at an angle of 45 degrees after time delay and optical focusing of a time fixed delay and focusing optical system (3), and the metal target (4) is used for incidence of generated X rays to the upper surface of a semiconductor ultra-fast detection chip (5) to be detected.
3. The device for ultra-fast detection of transient refractive index of semiconductor material according to claim 2, wherein: the metal target (4) is a metal gold target and generates X-ray pulses with characteristic wavelength of 2.4 keV;
the metal target (4) is a metal titanium target and generates X-ray pulses with characteristic wavelength of 4.8 keV;
The metal target (4) is a metal copper target and generates X-ray pulses with the characteristic wavelength of 8 keV.
4. A semiconductor material transient refractive index ultrafast detecting device according to any one of claims 1 to 3, wherein: the probe light regulation and control unit (12) comprises a reflecting mirror (6), an adjustable stepping delay optical system (7) and a dispersion broadening crystal (8) which are sequentially arranged along the transmission direction of the B light beam.
5. The device for ultra-fast detection of transient refractive index of semiconductor material according to claim 4, wherein: the semiconductor ultra-fast detection device further comprises an anti-reflection film (13) which is arranged on the upper surface of the semiconductor ultra-fast detection chip (5) to be detected and is used for reflecting the probe light, and an anti-reflection film (14) which is arranged on the lower surface of the semiconductor ultra-fast detection chip (5) to be detected and is used for reflecting the probe light.
6. The device for ultra-fast detection of transient refractive index of semiconductor material according to claim 5, wherein: the light beam A is transmitted light, and the energy ratio is more than 99%; the B beam is reflected light.
7. The device for ultra-fast detection of transient refractive index of semiconductor material according to claim 5, wherein: the signal readout unit (10) comprises a spectrometer and a data processor;
The spectrometer is used for receiving probe light reflected by the semiconductor ultra-fast detection chip (5) to be detected and transmitted by the second beam splitter (9);
and the data processor obtains the response time of the semiconductor ultra-fast detection chip (5) to be detected to X rays according to the spectral intensity change of probe light received by the spectrometer.
8. A method for detecting the transient refractive index of a semiconductor material by using the device for detecting the transient refractive index of the semiconductor material according to any one of claims 1 to 7, which is characterized by comprising the following steps:
1) The high-power pulse laser (1) generates picosecond-level short-pulse laser, and the picosecond-level short-pulse laser is divided into two beams, namely an A beam and a B beam, through a first beam splitter (2);
2) The A beam is incident into a pulse X-ray excitation unit (11), is subjected to time delay and optical focusing by a time fixed delay and focusing optical system (3), is incident into the surface of a metal target (4) at an angle of 45 DEG, is excited on the surface of the target to generate X-rays, and is incident into the upper surface of a semiconductor ultra-fast detection chip (5) to be detected;
The B light beam is incident to the probe light regulation and control unit (12), is reflected by the reflecting mirror (6), delayed by the adjustable stepping delay optical system (7), and expanded by the time domain of the chromatic dispersion expanding crystal (8), and is reflected by the second beam splitting mirror (9) to the lower surface of the semiconductor ultra-fast detection chip (5) to be detected;
Simultaneously, the probe light and the X-rays reach the surface of the ultra-fast detection chip (5) of the semiconductor to be detected at the same time by adjusting the adjustable stepping delay optical system (7);
3) The refractive index of the semiconductor ultra-fast detection chip (5) to be detected is modulated by the X-rays, and the response process of the semiconductor ultra-fast detection chip (5) to be detected to the X-rays is synchronously incident to probe light in the semiconductor ultra-fast detection chip (5) to be detected, namely, the spectral intensity of the probe light incident to the semiconductor ultra-fast detection chip (5) is changed;
4) The signal reading unit (10) receives probe light reflected by the semiconductor ultra-fast detection chip (5) to be detected and transmitted by the second beam splitter (9), and obtains the response process of the semiconductor ultra-fast detection chip (5) to be detected to X rays by detecting the spectral intensity change of the probe light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010339529.1A CN111443062B (en) | 2020-04-26 | 2020-04-26 | Device and method for detecting transient refractive index ultrafast of semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010339529.1A CN111443062B (en) | 2020-04-26 | 2020-04-26 | Device and method for detecting transient refractive index ultrafast of semiconductor material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111443062A CN111443062A (en) | 2020-07-24 |
| CN111443062B true CN111443062B (en) | 2024-05-31 |
Family
ID=71650289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010339529.1A Active CN111443062B (en) | 2020-04-26 | 2020-04-26 | Device and method for detecting transient refractive index ultrafast of semiconductor material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111443062B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112649834B (en) * | 2020-12-23 | 2023-12-08 | 中国科学院西安光学精密机械研究所 | Full-optical solid ultrafast imaging system and method for ICF core self-luminous key process |
| CN113834784B (en) * | 2021-09-18 | 2024-06-18 | 王红珍 | Device for detecting wide forbidden band semiconductor electronic device |
| CN114414041B (en) * | 2021-12-27 | 2024-04-05 | 中国科学院西安光学精密机械研究所 | Visible light and ray pulse detection method with picosecond order and solid stripe camera |
| CN114778570A (en) * | 2022-03-18 | 2022-07-22 | 中国科学院西安光学精密机械研究所 | X-ray ultrafast imaging system and method based on radiation conversion and spectral filtering |
| CN117330527B (en) * | 2023-12-01 | 2024-03-12 | 苏州大学 | A measuring device and method for single pulse long delay transient absorption |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000214082A (en) * | 1999-01-27 | 2000-08-04 | Hamamatsu Photonics Kk | Measuring apparatus for nonlinear optical response of medium |
| CN1687762A (en) * | 2005-04-29 | 2005-10-26 | 中国科学院上海光学精密机械研究所 | Ultrafast time resolution X-ray spectrometer |
| EP1865299A1 (en) * | 2006-06-06 | 2007-12-12 | Hartmut Schröder | Method and device for fs laser pulse characterization |
| CN108956537A (en) * | 2018-06-15 | 2018-12-07 | 北京工业大学 | A kind of Superfast time resolution transient state reflecting spectrograph |
| CN109374134A (en) * | 2018-10-30 | 2019-02-22 | 北京工业大学 | Ultrafast time-resolved transient reflectance spectroscopy imaging system |
| CN110471101A (en) * | 2019-08-12 | 2019-11-19 | 西北核技术研究院 | Impulse gamma X-ray detection X method and detection system based on laser polarization modulation |
| CN212364068U (en) * | 2020-04-26 | 2021-01-15 | 中国科学院西安光学精密机械研究所 | A device for ultrafast detection of transient refractive index of semiconductor materials |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006020341A2 (en) * | 2004-07-23 | 2006-02-23 | Massachusetts Institute Of Technology | Characterization of materials with optically shaped acoustic waveforms |
| JP5643329B2 (en) * | 2009-11-18 | 2014-12-17 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Multiple pulse impulsive stimulated Raman spectroscopy apparatus and measurement method |
| US8879137B2 (en) * | 2011-03-31 | 2014-11-04 | Lawrence Livermore National Security, Llc | Ultrafast transient grating radiation to optical image converter |
| JP5610399B2 (en) * | 2011-08-02 | 2014-10-22 | 独立行政法人科学技術振興機構 | Pump probe measuring device |
| US9274047B2 (en) * | 2013-05-24 | 2016-03-01 | Massachusetts Institute Of Technology | Methods and apparatus for imaging of occluded objects |
| US10161885B2 (en) * | 2014-04-07 | 2018-12-25 | Nova Measuring Instruments Ltd. | Optical phase measurement method and system |
| CN107036714B (en) * | 2017-04-25 | 2019-02-12 | 深圳大学 | A spectral phase interference device and system |
-
2020
- 2020-04-26 CN CN202010339529.1A patent/CN111443062B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000214082A (en) * | 1999-01-27 | 2000-08-04 | Hamamatsu Photonics Kk | Measuring apparatus for nonlinear optical response of medium |
| CN1687762A (en) * | 2005-04-29 | 2005-10-26 | 中国科学院上海光学精密机械研究所 | Ultrafast time resolution X-ray spectrometer |
| EP1865299A1 (en) * | 2006-06-06 | 2007-12-12 | Hartmut Schröder | Method and device for fs laser pulse characterization |
| CN108956537A (en) * | 2018-06-15 | 2018-12-07 | 北京工业大学 | A kind of Superfast time resolution transient state reflecting spectrograph |
| CN109374134A (en) * | 2018-10-30 | 2019-02-22 | 北京工业大学 | Ultrafast time-resolved transient reflectance spectroscopy imaging system |
| CN110471101A (en) * | 2019-08-12 | 2019-11-19 | 西北核技术研究院 | Impulse gamma X-ray detection X method and detection system based on laser polarization modulation |
| CN212364068U (en) * | 2020-04-26 | 2021-01-15 | 中国科学院西安光学精密机械研究所 | A device for ultrafast detection of transient refractive index of semiconductor materials |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111443062A (en) | 2020-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111443062B (en) | Device and method for detecting transient refractive index ultrafast of semiconductor material | |
| CN111829757B (en) | Transient measurement device and detection method for laser-induced damage characteristics of optical element | |
| CN105807305B (en) | A kind of double-wavelength pulse laser radiation dose rate effect analog system | |
| CN102393383B (en) | ArF laser film element irradiation damage test device with high irradiation density uniformity | |
| CN102564611B (en) | High-power laser wave front measuring instrument and wave front measuring method | |
| CN208833473U (en) | A multi-wavelength laser damage threshold detection device | |
| US20230073406A1 (en) | Micro-thrust and micro-impulse application device and method based on light pressure principle | |
| Busch et al. | Four‐frame holographic probing system for plasma density measurement | |
| CN111175328A (en) | Real-time detection device and method for material structure | |
| CN106248636B (en) | A method of measurement material nonlinearity absorption curve | |
| CN212364068U (en) | A device for ultrafast detection of transient refractive index of semiconductor materials | |
| CN115047508A (en) | Phase array step reflector device, single pulse X-ray pulse width measuring device and measuring method | |
| CN113552611B (en) | Ultrafast neutron pulse energy spectrum detection system and method | |
| CN112268861A (en) | Dual-wavelength femtosecond pumping detection heat reflection system | |
| CN117490860A (en) | Point light source spectral calibration method for imaging type ultra-high spectral resolution Fourier spectrometer | |
| CN208443765U (en) | Semiconductor transient state X-ray nonlinear optical effect test device | |
| CN117214137A (en) | Dark field time domain resolution detection device and detection method based on scattering imaging | |
| CN116626017A (en) | Laser ablation absorption spectrum measuring device based on nanosecond narrow linewidth laser detection | |
| CN112268860A (en) | Dual-wavelength femtosecond pumping detection heat reflection system | |
| CN211651529U (en) | Material deformation detecting system based on laser shot blasting | |
| US20230003636A1 (en) | Multipoint photo-acoustic measuring device | |
| CN114459621A (en) | Superconducting X-ray detector time jitter calibration system and method | |
| US6876723B1 (en) | Rise time measurement for ultrafast X-ray pulses | |
| CN119290342B (en) | Backscattered light testing system and method for telescope system | |
| RU2808750C1 (en) | Device for measuring parameters and characteristics of radiation sources |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |