CN111491438B - Erasable plane microwave device based on vanadium dioxide phase change film - Google Patents
Erasable plane microwave device based on vanadium dioxide phase change film Download PDFInfo
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- 230000008859 change Effects 0.000 title claims abstract description 112
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 title claims abstract description 73
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 238000010438 heat treatment Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000004020 conductor Substances 0.000 claims abstract description 10
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- 239000000463 material Substances 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 10
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
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- 239000004793 Polystyrene Substances 0.000 claims description 2
- 230000009471 action Effects 0.000 claims description 2
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- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 238000009776 industrial production Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
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Abstract
本发明涉及一种基于二氧化钒相变薄膜的可擦写平面微波器件，属于平面微波器件领域。包括二氧化钒的相变薄膜、介质基底、接地板、网格式热风罩、电阻丝；相变薄膜上设有相变区域，其它区域为非相变区域；网格状的热风罩紧密罩设在相变薄膜上；每个网格连通着电阻丝；与贴片天线图形或天线阵列图形等的相变区域对应的电阻丝得电使热风罩上网格内的空气升温，当温度上升到68‑72℃时，升温网格下对应的相变区域由常态下的绝缘性质相变为导体性质；保持热风罩下贴片天线图形或天线阵列图形等的相变区域的温度为68‑72℃，得到平面微波贴片天线或平面微波天线阵列或平面微波滤波器或平面微波功分器或平面微波开关。
The invention relates to a rewritable plane microwave device based on a vanadium dioxide phase change film, belonging to the field of plane microwave devices. Phase-change film including vanadium dioxide, dielectric substrate, grounding plate, grid-shaped hot air cover, and resistance wire; phase-change film is provided with phase-change area, and other areas are non-phase-change areas; grid-shaped hot air cover is tightly covered. On the phase change film; each grid is connected to a resistance wire; the resistance wire corresponding to the phase change area of the patch antenna pattern or antenna array pattern is energized to heat the air in the grid on the hot air cover. When the temperature rises to 68 At ‑72℃, the corresponding phase change area under the heating grid changes from insulating properties to conductor properties under normal conditions; keep the temperature of the phase change area of the patch antenna pattern or antenna array pattern under the hot air cover at 68‑72℃, A planar microwave patch antenna or a planar microwave antenna array or a planar microwave filter or a planar microwave power divider or a planar microwave switch is obtained.
Description
Technical Field
The invention belongs to the field of planar microwave devices, and relates to conversion among various planar microwave functional circuits. In particular to a method for utilizing vanadium dioxide (VO)2) The phase change characteristic of the material is used for realizing the functions of devices such as an antenna, an array antenna, a filter, a power divider and the like.
Background
In the past industrial production, the non-erasable microstrip device manufactured based on the metal microstrip line has the advantages of high reliability, low manufacturing cost, small volume and the like. The existing non-erasable microstrip device is generally formed by printing through a mask plate, and the manufactured printing plate comprises three layers, namely a grounding plate, a dielectric layer and a line layer. In consideration of the conductor loss of signals in the transmission process, the ground plate and the circuit layer of the conventional metal microstrip line generally adopt metal wires with high conductivity and high stability, such as metal copper or aluminum, and in order to reduce the dielectric loss of signals in the transmission process, a substrate with high dielectric constant, such as dielectric silicon or titanium dioxide, is generally selected. In order to ensure the stability of the whole device, the grounding plate, the circuit layer and the intermediate medium substrate are required to be tightly combined together, and materials with high adhesion such as chromium are generally required to be used for bonding the grounding plate, the circuit layer and the intermediate medium substrate. Although the existing metal microstrip line structure is simple to manufacture, the existing metal microstrip line structure is limited by factors such as high process requirement precision and non-erasability, so that the production cost is wasted, and further breakthrough cannot be made in the application field.
Disclosure of Invention
The invention provides a vanadium dioxide (VO) -based catalyst2) The erasable planar microwave device of the phase-change film utilizes vanadium dioxide (VO)2) The metal/nonmetal phase change characteristics of the material realize the erasable function of the device.
Vanadium dioxide (VO)2) The material is converted from insulating property to metallic property along with the rise of temperature, thereby replacing the metallic wire in the traditional microstrip device, and thus vanadium dioxide (VO)2) Different circuit structures can be generated by heating different positions of the phase change film (1). For microstrip devices such as antennas, filters, antenna arrays, and power splitters, different circuit structures now exist of vanadium dioxide (VO)2) The characteristics of the phase change film (1) are different only in metal areas, namely different types of microstrip devices can be realized by changing the temperature of the phase change area (12). The method comprises the steps of obtaining the physical size of a corresponding device through a calculation formula, marking the physical size in a size graph range as a phase change area, and heating the phase change area by using an electrically-driven micro heater to convert the property of an insulator at normal temperature into metal at high temperature so as to realize the function of the specific device.
The specific technical solution of the invention is as follows:
vanadium dioxide (VO) -based2) The erasable planar microwave device of the phase change film comprises a functional substrate, a hot air hood 4 and a heating resistance wire 6;
the functional substrate is a flat plate formed by a phase change film 1, a medium base 2 and a grounding plate 4 which are fixedly bonded in sequence; the material of the phase-change film 1 is vanadium dioxide (VO)2) The dielectric substrate 2 is made of sapphire, and the grounding plate 3 is made of copper;
the phase-change film 1 is provided with a phase-change area 12, and the other areas are non-phase-change areas 11, wherein the phase-change area 12 is converted from an insulating property to a conductor property under the action of temperature, so that the equivalent effect is realized by a patch antenna or an antenna array or a filter or a power divider or a switch in a metal microstrip structure, and the non-phase-change area 11 is a normal-temperature area, embodies the property of an insulator and is equivalent to air in the metal microstrip structure;
the hot air cover 4 is tightly covered on the phase change film 1; the hot air cover 4 is plate-shaped and is composed of uniformly arranged grid cavities, and each grid cavity is communicated with a heating resistance wire 6;
determining a corresponding heating area 42 and a non-heating area 41 on the hot air hood 4 according to the phase change area 12 and the non-phase change area 11 on the phase change film 1; the phase change region 12 completely corresponds to the heating region 42, and the non-phase change region 11 completely corresponds to the non-heating region 41;
when the heating resistance wire 6 of the heating area 42 on the hot air hood 4 is electrified, the temperature of the air in the grid cavity of the corresponding heating area 42 is raised, and when the temperature is raised to 68-72 ℃, the corresponding phase change area 12 below the heating area 42 is changed from the insulation property in the normal state into the conductor property;
the temperature of the heating area 42 on the hot air cover 4 is always kept at 68-72 ℃, and then the plane microwave patch antenna or the plane microwave antenna array or the plane microwave filter or the plane microwave power divider or the plane microwave switch is obtained.
The technical scheme for further limiting is as follows:
the hot air hood 4 is made of polystyrene, the dielectric constant is 1.5, the heat-resistant temperature is 140 ℃, and the thermal conductivity is low and is 0.1.
The plane size of the grid cavity on the hot air cover 4 is 0.5mm multiplied by 0.5 mm-2 mm multiplied by 2mm, and the depth of the grid cavity is 5-25 mm.
Under the conditions of gas flow rate of 40Sccm, temperature in a furnace of 700 DEG and 800 ℃ and sputtering pressure of argon (Ar) of 0.4Pa, vanadium dioxide (VO) with the thickness of 5um is deposited on the dielectric substrate 22) And annealing the phase change film in the nitrogen atmosphere to obtain the phase change film 1 with the thickness of 0.01-0.1 mm.
The thickness of the phase change film 1 is 0.01-0.1mm, the thickness of the medium substrate 2 is 0.5mm, and the thickness of the grounding plate 3 is 0.2-0.3 mm.
The pattern of the phase change region 12 on the phase change film 1 corresponding to the planar microwave patch antenna is in a shape of a letter A and is positioned on one side edge of the phase change film 1, and the shape of the letter A is formed by sequentially connecting a radiation rectangle, an impedance transformation line and a feed port microstrip line; the length of the radiating rectangle in the A-shaped pattern is 0.34 lambda, and the width of the radiating rectangle is 0.45 lambda due to the influence of the vanadium dioxide thin film; the length of the impedance transformation line is 0.37 lambda; and the lambda is the wavelength corresponding to the working frequency and is in mm.
The pattern of the phase change area 12 on the phase change film 1 corresponding to the planar microwave antenna array is formed by pairwise opposite patterns of four independent A-shaped patch antennas, and each pattern is formed by sequentially connecting a radiation rectangle, an impedance transformation line and a feed port microstrip line to form a patch antenna; the length of the radiating rectangle in the graph is 0.34 lambda, and the width of the radiating rectangle in the graph is 0.45 lambda; the length of the impedance transformation line is 0.37 lambda, and the distance between the radiation patches is 0.1 lambda; and the lambda is the wavelength corresponding to the working frequency and is in mm.
The pattern of the phase change region 12 on the phase change film 1 corresponding to the planar microwave filter is formed by serially combining two A-shaped patterns and a middle-shaped pattern, each A-shaped pattern is composed of a resonance rectangle and an impedance transformation line, and the middle-shaped pattern is composed of a resonance rectangle and two impedance transformation lines; the resonance rectangles in the A-shaped graph have the same structures as those in the middle-shaped graph, and the impedance transformation lines in the A-shaped graph have the same structures as those in the middle-shaped graph; the length of the resonance rectangle is 0.37 lambda, and the width of the resonance rectangle is 0.45 lambda; the length of the impedance transformation line is 0.32 lambda; and the lambda is the wavelength corresponding to the working frequency and is in mm.
The graph of the phase change region 12 on the phase change film 1 corresponding to the planar microwave power divider is T-shaped and consists of two energy distribution rectangular strips, an energy input rectangular strip and a horizontal connecting strip, wherein the two energy distribution rectangular strips are respectively positioned at two ends of the horizontal connecting strip and used for energy output, and one rectangular strip vertical to the horizontal connecting strip is positioned in the vertical direction and used for energy input; the length of the energy distribution rectangular strip is 0.5 lambda, and the length of the energy output rectangular strip is 0.5 lambda; and the lambda is the wavelength corresponding to the working frequency and is in mm.
The pattern of the phase change region 12 on the phase change film 1 corresponding to the planar microwave switch is 1 strip-shaped connecting strip, and the strip-shaped connecting strip is positioned on the symmetrical middle line of the phase change film 1; the width of the strip-shaped connecting strip is 0.05 lambda; and the lambda is the wavelength corresponding to the working frequency and is in mm.
The beneficial technical effects of the invention are embodied in the following aspects:
(1) vanadium dioxide (VO) in the present invention2) The phase change film has a phase change characteristic, only the resistance wire 6 needs to be heated, the heated resistance wire 6 can heat the air in the grid on the hot air hood, when the temperature rises to a critical range of 68-72 ℃, the heated vanadium dioxide phase change film in the grid can be changed from an insulating property in a normal state into a conductor property at a high temperature, and the upper area of the unheated vanadium dioxide phase change film is at a normal temperature. Different types of planar microwave devices can be realized by changing the pattern of the heated area.
(2) Once the traditional metal microstrip device is manufactured, the shape and size of a conductor of the traditional metal microstrip device are fixed, and the microwave function of the traditional metal microstrip device cannot be reconstructed, so that the processing flow is repeated every time a new microwave function development design is carried out, and the processing period is long.
(3) The traditional metal microstrip device needs different mask plates for manufacturing different microstrip circuits, the operation process is irreversible, and the microstrip line has the property of non-erasability; the vanadium dioxide (VO2) erasable device is obtained by controlling temperature to adjust different circuit structures, and has erasability;
(4) although the traditional metal microstrip device is simple in production process, the production cost is higher for large-scale production due to the property of non-erasability; in contrast, vanadium dioxide (VO)2) Erasable device of phase change film requires production environment control and device precisionThe device has the advantages of high reusability, complex production process and high use flexibility, and compared with a non-erasable metal microstrip structure, the device greatly improves the reusability.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a cross-sectional view of the hot air hood 4;
FIG. 3 is a bottom view of the hot air hood;
FIG. 4 is a schematic view of a functional substrate structure;
FIG. 5 is a schematic diagram of an equivalent patch antenna structure;
FIG. 6 is a diagram of equivalent patch antenna structure dimensions;
FIG. 7 is a schematic view of a hot air hood corresponding to an equivalent patch antenna structure;
fig. 8 is a schematic diagram of an equivalent patch antenna array structure;
fig. 9 is a diagram of equivalent patch antenna array structure dimensions;
FIG. 10 is a schematic view of a hot air hood corresponding to an equivalent patch antenna array structure;
FIG. 11 is a schematic diagram of an equivalent filter structure;
FIG. 12 is a diagram of equivalent filter structure dimensions;
FIG. 13 is a schematic diagram of a hot air hood corresponding to the equivalent filter structure;
FIG. 14 is a schematic diagram of an equivalent power divider;
FIG. 15 is a diagram of the structural dimensions of an equivalent power divider;
FIG. 16 is a schematic diagram of a hot air hood corresponding to the equivalent power divider;
FIG. 17 is a schematic diagram of an equivalent switch structure;
FIG. 18 is a diagram of equivalent switch structure dimensions;
FIG. 19 is a schematic structural diagram of a hot air hood corresponding to the equivalent switch structure;
FIG. 20 is a graph of antenna return loss;
FIG. 21 is a YOZ and XOZ plane directional diagram of the antenna;
FIG. 22 is a return loss plot for an array antenna;
FIG. 23 is a YOZ plane and XOZ plane directional diagram of an array antenna;
FIG. 24 is a graph of return loss and insertion loss for a filter;
fig. 25 is a graph of return losses S11, S22, and S33 of the power divider;
fig. 26 is a graph of insertion losses S21 and S31 of the power divider.
Numbers in fig. 1-19: vanadium dioxide (VO)2) The phase change film comprises a phase change film 1, a high temperature region 12, a normal temperature region mark 11, a sapphire medium substrate 2, an earth plate 3, a hot air cover 4, a heating region 42, an unheated region 41 and a resistance wire 6.
Detailed Description
The invention will be further described by way of example with reference to the accompanying drawings.
The invention adopts sapphire with the thickness of 0.5mm as a dielectric substrate 2, uses a copper layer as an earth plate 3, and changes a conventional metal wire layer into vanadium dioxide (VO) with the thickness of 0.01mm2) A thin film layer.
The specific processing operation steps for preparing the functional substrate are as follows:
1. grinding sheet
Rough grinding and fine grinding are carried out on the sapphire medium substrate blank, so that the thickness, the surface uniformity and the surface smoothness of the substrate all meet the experimental requirements, and a medium substrate 2 is obtained;
2. evaporation of
Plating a layer of metal copper (with the thickness of 0.2mm, because the sapphire has poor adhesion, a layer of chromium is plated before plating the metal of the grounding plate) with the thickness of 0.2mm on one side surface of the ground medium substrate 2 in a vacuum coating machine to form the grounding plate 3;
3. coating film
Under the condition of argon gas, a vanadium pentoxide layer with the thickness of 0.01mm is sputtered and deposited on the other side surface of the ground medium substrate 2 through radio frequency, and then the vanadium pentoxide layer is annealed in a nitrogen atmosphere to form vanadium dioxide (VO)2) The film, phase change film 1, is shown in fig. 3.
In past production practices, vanadium dioxide (VO)2) The phase change properties of materials are mainly applied in two places, first: the on-off characteristic is directly used as a switch component, and the selection is realized in a common deviceA pass function, such as controlling the on/off of a feed port, implementing a band-stop function in a filter, etc.; secondly, the method comprises the following steps: in device design, vanadium dioxide (VO)2) The material replaces the local structure of the circuit and the effect on the overall performance is then achieved by a change in the dimensions of the device parts, for example vanadium dioxide (VO)2) Instead of the radiating walls of the microwave device of the antenna, the function of the antenna is adjusted by the variation of the dimensions of the radiating walls.
The innovation points of the invention are as follows: vanadium dioxide (VO)2) The local use of the material in the device is expanded to the use in the whole device, the phase change characteristic of the material is utilized to completely replace the metal microstrip line part of the device, the material cost of the metal line is saved, and the reusability of the design is improved. Equivalent models of patch antennas and antenna arrays and filters and power splitters can be implemented, and the invention is exemplified below.
Example 1: equivalent patch antenna
See fig. 5 and 6, based on vanadium dioxide (VO)2) The first device for simulating the phase change characteristics of the material is a planar microwave patch antenna, and the pattern of a phase change area 12 on a phase change film 1 corresponding to the planar microwave patch antenna is in a shape of a Chinese character 'jia' and is positioned at one side edge of the phase change film 1; the A-shaped pattern is formed by sequentially connecting a radiation rectangle, a quarter impedance transformation band and a feed port microstrip line. On the basis of determining the resonant frequency f to be 5.3GHz, the working wavelength lambda to be 19.2mm is obtained through calculation, and according to the corresponding relation between the size and the wavelength, the size of the phase change region is obtained through calculation and optimization: the length L1 of the radiating rectangle is 11mm +/-0.2 mm, and the width W1 is 9mm +/-0.15 mm; the length L2 of the impedance transformation line is 5mm +/-0.15 mm, and the width W2 is 0.3mm +/-0.05 mm; it is determined that the phase change film 1 is provided with a phase change region 12 and a non-phase change region 11.
Referring to fig. 7, the phase change region 12 and the non-phase change region 11 are arranged on the phase change film 1 to reversely derive the corresponding heating region 42 and the non-heating region 41 on the hot air cover 4.
Referring to fig. 1, a hot air hood 4 is closely covered on a phase change film 1; the hot air cover 4 is plate-shaped and is composed of uniformly arranged grid cavities; each grid cavity is communicated with a resistance wire 6. The planar dimensions of the grid were 0.5mm by 0.5mm, and the depth of the grid was 10 mm. The resistance wire 6 of the heating area 42 on the hot air hood 4 is electrified, so that the temperature of the air in the grid cavity of the hot air hood 4 is increased, and when the temperature is increased to 68 ℃, the corresponding phase change area 12 under the heating area 42 is changed from the insulation property under the normal state into the conductor property.
The temperature of the heating area 42 on the hot air hood 4 is always kept at 68 ℃, and the planar microwave patch antenna is obtained. When the temperature of the phase change region 12 on the phase change film 1 changes from normal temperature to high temperature, the conductivity of the phase change film changes by 5 orders of magnitude (the conductivity before phase change is a number, and the conductivity after phase change is as high as 10)6). The non-heated region 41 is kept at normal temperature.
Referring to fig. 20 and 21, as can be seen from the return loss and the directional diagram of the antenna, the antenna operates at 5.2GHz, the gain is greater than 2dBi, and the basic function of the antenna is well realized.
Example 2: equivalent antenna array
See fig. 8 and 9, based on vanadium dioxide (VO)2) A second device that the phase change properties of the material can simulate is a patch antenna array antenna. The pattern of the phase change area 12 on the phase change film 1 corresponding to the planar microwave antenna array is formed by the two-by-two opposite patterns of four independent A-shaped patch antennas; each pattern is formed by connecting a radiation rectangle, an impedance transformation line and a feed port microstrip line in sequence to form a patch antenna. The distance between the patch antenna units needs to be adjusted on the basis of the patch antenna, when the resonant frequency f is 5.3GHz, the working wavelength λ is 19.2mm by calculation, and according to the corresponding relation between the size and the wavelength, the size of the phase change region 12 obtained by calculation and optimization is as follows: the length L1 of each radiation rectangle is 11mm +/-0.2 mm, the width W1 is 9mm +/-0.15 mm, the length L2 of the impedance transformation line is 5mm +/-0.15 mm, the width W2 is 0.3mm +/-0.05 mm, the gap S between adjacent patches is 1cm, the width 1W and the phase of each feed port microstrip line are zero degrees, the corresponding shape on the hot air hood 4 is reversely deduced according to the designed shape, referring to fig. 10, the shaded area of the hot air hood 4 is a heating area 42, and the other areas are non-heating areas 41.
Referring to fig. 22 and 23, as can be seen from the return loss and the directional pattern of the array antenna, the array antenna operates at 5.2GHz, the gain is greater than 3dBi, and the basic function of the antenna is well realized.
Example 3: equivalent filter
See fig. 11 and 12, based on vanadium dioxide (VO)2) A third device that the phase change characteristics of a material can emulate is a filter. The pattern of the phase change region 12 on the phase change film 1 corresponding to the planar microwave filter is formed by serially combining two A-shaped patterns and a middle-shaped pattern, each A-shaped pattern is composed of a resonance rectangle and an impedance transformation line, and the middle-shaped pattern is composed of a resonance rectangle and two impedance transformation lines; the resonance rectangles in the A-shaped pattern and the resonance rectangles in the middle-shaped pattern have the same structure, and the impedance transformation lines in the A-shaped pattern and the impedance transformation lines in the middle-shaped pattern have the same structure.
On the basis of determining the resonant frequency f to be 5.3GHz, the working wavelength lambda to be 19.2mm is obtained through calculation, and according to the corresponding relation between the size and the wavelength, the size of the phase change region is obtained through calculation and optimization as follows: the length of the port impedance transformation line is L1 and is 2mm +/-0.1 mm, and the width W1 is 1mm +/-0.05 mm; the length L3 of the resonance rectangle is 8mm +/-0.2 mm, the width W3 is 9mm +/-0.2 mm, and the whole microstrip structure is symmetrically distributed. The corresponding shape of the grid type hot air hood 4 is inversely deduced according to the designed shape, and referring to fig. 13, the shaded area of the hot air hood 4 is the heating area 42, and the other areas are the non-heating areas 41.
Referring to fig. 24, it can be seen from the return loss and insertion loss of the filter that when the filter operates at 5.3GHz, the insertion loss is better than-40 dB, and the insertion loss outside the pass band is better than-5 dB, so that the basic function of the filter is better realized.
Example 4: equivalent power divider
See fig. 14 and 15, based on vanadium dioxide (VO)2) A fourth device for which the phase change properties of the material can be modeled is a power divider. The pattern of the phase change region 12 on the phase change film 1 corresponding to the planar microwave power divider is T-shaped and comprises two energy distribution rectangular strips, an energy input rectangular strip and a horizontal connecting strip, wherein the two energy distribution rectangular strips are respectively positioned at two ends of the horizontal connecting strip and are used for connecting the two energy distribution rectangular strips with the horizontal connecting stripEnergy output, a rectangular bar perpendicular to the horizontal connecting line is positioned in the vertical direction for energy input.
On the basis of determining the resonant frequency f to be 5.3GHz, the working wavelength lambda to be 19.2mm is obtained through calculation, and according to the corresponding relation between the size and the wavelength, the size of the phase change region is obtained through calculation and optimization as follows: the length L1 of the energy input rectangular strip is 10mm +/-0.2 mm, and the width W1 is 1mm +/-0.1 mm; the length L2 of horizontal connecting belt is 9mm +/-0.2 mm, and the width is W2: 0.5mm + -0.05 mm, a length L3 of the energy distribution rectangular strip of 6mm + -0.15 mm, and a width W3 of 1mm + -0.1mm, wherein the energy input rectangular strip and the horizontal connecting strips are symmetrically distributed. The shape corresponding to the grid type hot air hood 4 is inversely deduced according to the designed shape, and referring to fig. 16, the shaded area of the hot air hood 4 is the heating area 42, and the other areas are the non-heating areas 41.
Referring to fig. 25 and 26, as can be seen from the return loss and the insertion loss of the power divider, the return losses S11, S22 and S33 are better than-9 dB in the frequency band range, and the insertion losses S21 and S31 are better than-6.4 dB in the frequency band, so that the basic functions of the power divider are better realized.
Example 5: equivalent switch
See fig. 17 and 18, based on vanadium dioxide (VO)2) A fifth device that the phase change characteristics of the material can simulate is a switching device. The pattern of the phase change area 12 on the phase change film 1 corresponding to the planar microwave switch is 1 strip-shaped connecting strip, and the strip-shaped connecting strip is positioned on the symmetrical middle line of the phase change film 1. The length was the same as that of the sapphire substrate, and the width W1 was 1.1 mm. When vanadium dioxide (VO)2) The film is heated from the insulating property to the conductive property, the switch is equivalently changed from the closed state to the open state when vanadium dioxide (VO)2) The film is cooled from the conductor property to the insulation property, and the switch is equivalently changed from an opening state to a closing state. The corresponding shape of the grid type hot air hood 4 is inversely deduced according to the designed shape, and referring to fig. 19, the shaded area of the hot air hood 4 is the heating area 42, and the other areas are the non-heating areas 41.
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