CN111505912A - Ultraviolet wide-spectrum photoetching lens - Google Patents
Ultraviolet wide-spectrum photoetching lens Download PDFInfo
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- CN111505912A CN111505912A CN202010413573.2A CN202010413573A CN111505912A CN 111505912 A CN111505912 A CN 111505912A CN 202010413573 A CN202010413573 A CN 202010413573A CN 111505912 A CN111505912 A CN 111505912A
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- 238000001228 spectrum Methods 0.000 title claims description 9
- 238000001259 photo etching Methods 0.000 title abstract description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 238000001459 lithography Methods 0.000 claims description 14
- 238000001914 filtration Methods 0.000 claims description 6
- 230000005499 meniscus Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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Abstract
The invention relates to an ultraviolet broad spectrum photoetching lens, which is characterized by comprising: the system comprises an ultraviolet light source, a first lens group, a second lens group, a third lens group and a fourth lens group which are sequentially arranged along the sequence from the ultraviolet light source to a target, wherein the ultraviolet light source comprises a digital micro-reflector and a first lens, and the first lens is a biconvex lens; the first lens group includes: the first number of positive lenses and the second number of negative lenses are sequentially arranged along the sequence from the ultraviolet light source to the target, and the combined focal length of the first lens group is positive; the second lens group comprises: the third number of positive lenses and the fourth number of negative lenses are sequentially arranged along the sequence from the ultraviolet light source to the target, the combined focal length of the second lens group is positive, and the lens closest to the first lens group in the second lens group can move along the optical axis direction; the third lens group comprises: and the fifth positive lenses are sequentially arranged along the sequence from the ultraviolet light source to the target, and the combined focal length of the third lens group is positive. By applying the embodiment of the invention, the photoetching cost can be reduced.
Description
Technical Field
The invention relates to the technical field of circuit board photoetching, in particular to an ultraviolet wide-spectrum photoetching lens.
Background
At present, with the increasing demand for high-density circuit boards, the conventional PCB (Printed circuit board) contact exposure machine cannot meet the demand for high density, and the mask needs to be frequently replaced, resulting in higher use cost. Therefore, a new digital exposure machine is commonly used at present, but such a digital exposure machine usually uses a single-wavelength ultraviolet laser light source, the central wavelength of the light source is 405nm, and the light source is matched with a special 405nm lithography lens, so that a special dry film is required, the price of the special dry film is much higher than that of a common dry film, and therefore, the existing digital lithography machine has the technical problem of higher lithography cost.
In order to solve the above problems, the invention patent application with application number 201811635995.3 in the prior art discloses a double telecentric projection lithography lens, which has the characteristics of reasonable design, high telecentricity and low distortion, is suitable for scenes with long working distance, and comprises a front lens group, a diaphragm and a rear lens group which are sequentially arranged from an object side to an image side; the front lens group comprises the following components arranged in sequence from an object side to an image side: a first lens having a positive refractive power; a second lens having a negative focal power; a third lens having positive focal power; a fourth lens having a negative focal power; a fifth lens having a negative focal power; the rear lens group comprises the following components arranged from an object side to an image side in sequence: a sixth lens having a negative focal power; a seventh lens having positive optical power; an eighth lens having a positive refractive power; a ninth lens; a tenth lens having positive optical power; eleventh lens, negative power.
However, the working wavelength of the laser used in the existing PCB lithography technology is generally 405nm, a special dry film is needed, and the used lens is also a lens with a single wavelength, which cannot solve the problem of high use cost in the prior art.
Disclosure of Invention
The technical problem to be solved by the invention is how to reduce the photoetching cost.
The invention solves the technical problems through the following technical means:
the embodiment of the invention provides an ultraviolet broad spectrum photoetching lens, which comprises: an ultraviolet light source, a first lens group, a second lens group, a third lens group and a fourth lens group which are arranged in sequence from the ultraviolet light source to the target,
the ultraviolet light source emits ultraviolet light so that the ultraviolet light irradiates on the light incident surface of the first lens group, the ultraviolet light source comprises a digital micro reflector and a first lens, and the first lens is a biconvex lens;
the first lens group includes: the first number of positive lenses and the second number of negative lenses that set gradually along the order of ultraviolet source to target, and the combination focus of first mirror group is positive, wherein, first quantity includes: fourth, the second quantity comprises: II, performing secondary filtration;
the second lens group includes: the third quantity positive lens and the fourth quantity negative lens that set gradually along ultraviolet source to the order of target, and the combination focus of second mirror group is positive, and the lens nearest apart from first mirror group in the second mirror group can be followed the optical axis direction and moved, wherein, the third quantity includes: third, the fourth number includes: II, performing secondary filtration;
the third lens group includes: a fifth number of positive lenses sequentially arranged in an order from the ultraviolet light source to the target, and a combined focal length of the third lens group is positive, wherein the fifth number includes: and II, performing secondary treatment.
The invention aims to provide an ultraviolet broad-spectrum lens for digital photoetching, which can cover a wavelength range of 360nm-410nm and accord with a spectral response range of a common dry film, so that a light source is replaced, and the broad-spectrum lens provided by the embodiment of the invention can be matched to etch the common dry film without using a special dry film, thereby greatly reducing the production cost.
Optionally, the radius of curvature of the object plane side of the first lens is: r is more than or equal to 90mm and less than or equal to infinity, and the radius of curvature of the first lens on the image plane side is as follows: r is more than or equal to 90mm and less than or equal to infinity, wherein R is the curvature radius.
Optionally, the first lens group includes: the second lens, the third lens, the fourth lens, the fifth lens, the sixth lens and the seventh lens are sequentially arranged along the sequence from the ultraviolet light source to the target, wherein the curvature radius of the object plane side of the second lens is as follows: r is more than or equal to 90mm and less than or equal to infinity, and the curvature radius of the image plane side is as follows: r is more than or equal to 50mm and less than or equal to 200 mm;
the object plane side curvature radius of the third lens is as follows: r is more than or equal to 100mm and less than or equal to 250mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 100mm and less than or equal to 500 mm;
the object plane side curvature radius of the fourth lens is as follows: r is more than or equal to 40mm and less than or equal to 80mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 200mm and less than or equal to infinity;
the object plane side curvature radius of the fifth lens is as follows: r is more than or equal to 40mm and less than or equal to 80mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 150mm and less than or equal to infinity;
the object plane side curvature radius of the sixth lens is as follows: r is more than or equal to 200mm and less than or equal to infinity, and the curvature radius of the image plane side is as follows: r is more than or equal to 50mm and less than or equal to 150 mm;
the object plane side curvature radius of the seventh lens is as follows: r is more than or equal to 100mm and less than or equal to 500mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 25mm and less than or equal to 60 mm;
the second lens element, the third lens element, the fourth lens element, the fifth lens element and the sixth lens element are biconvex or planoconvex lenses, and the seventh lens element is a biconcave lens element.
Optionally, the second lens group includes: the lens comprises an eighth lens, a ninth lens, a tenth lens, an eleventh lens and a twelfth lens which are sequentially arranged along the sequence from the ultraviolet light source to the target, wherein the curvature radius of the object plane side of the eighth lens is as follows: r is more than or equal to 200mm and less than or equal to infinity, and the curvature radius of the image plane side is as follows: r is more than or equal to 30mm and less than or equal to 100mm, wherein R is curvature radius;
the object plane side curvature radius of the ninth lens is as follows: r is more than or equal to 30mm and less than or equal to 100mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 100mm and less than or equal to 300 mm;
the object plane side curvature radius of the tenth lens is as follows: r is more than or equal to 25mm and less than or equal to 60mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 30mm and less than or equal to 80 mm;
the object plane side curvature radius of the eleventh lens is as follows: r is more than or equal to 200mm and less than or equal to infinity, and the curvature radius of the image plane side is as follows: r is more than or equal to 20mm and less than or equal to 60.
The object plane side curvature radius of the twelfth lens is as follows: r is more than or equal to 25mm and less than or equal to 60mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 50mm and less than or equal to 150 mm;
the eighth lens element and the eleventh lens element are biconvex or planoconvex lenses, the ninth lens element is a biconvex lens element, the tenth lens element and the eleventh lens element are meniscus lenses, and the twelfth lens element is a biconcave lens element.
Optionally, the third lens group includes: the thirteenth lens and the fourteenth lens are sequentially arranged along the sequence from the ultraviolet light source to the target, wherein the curvature radius of the object plane side of the thirteenth lens is as follows: r is more than or equal to 100mm and less than or equal to 800mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 50mm and less than or equal to 150 mm;
the object-plane-side radius of curvature of the fourteenth lens is: r is more than or equal to 100mm and less than or equal to 200mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 200mm and less than or equal to infinity, wherein R is the curvature radius;
the thirteenth lens is a meniscus lens, and the fourteenth lens is a biconvex or plano-convex lens.
Optionally, the focal length relationship among the first lens, the first lens group, the second lens group, and the third lens group is:
150≤F1≤300
50≤F2≤100
75≤F3≤125
75≤F4≤125
2≤F34/F12≤3
wherein F1 is the focal length of the first lens in millimeters; f2 is the focal length of the first lens group and has the unit of millimeter; f3 is the focal length of second lens group 30 in millimeters; f4 is the focal length of the third lens group and has the unit of millimeter; f12 is the combined focal length of the first lens and the first lens group, in mm; f34 is the focal length of second lens group 30 and third lens group, and is in millimeters.
Optionally, the magnification, the wavelength range, the object line field of view, and the object numerical aperture of the lens are respectively:
1≤M≤3；
360nm≤W≤410nm；
15mm≤F≤25mm；
NA is more than or equal to 0.08 and less than or equal to 0.15, wherein,
m is the magnification of the lens; w is the wavelength range of the lens; f is the size of the object space line view field; and NA is the numerical aperture of the object space on the digital micro-reflector side of the lens.
Optionally, the distance between the first lens, the digital micro-mirror and the first lens group satisfies the following condition:
1mm＜d01＜20mm
45mm < d12 < 100mm, wherein d01 is the center distance between the first lens and the digital micro-reflector; the d02 is the center distance between the digital micro-mirror and the second lens.
Optionally, the lens includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, a seventh lens, an eighth lens, a ninth lens, a tenth lens, an eleventh lens, a twelfth lens, a thirteenth lens, and a fourteenth lens, and the glass material satisfies the following conditions:
the first lens satisfies the following condition: nd is more than 1.45 and less than 1.65, Vd is more than 30 and less than 85; wherein Nd is the optical refractive index, and Vd is the Abbe constant;
the second lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the third lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the fourth lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the fifth lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the sixth lens satisfies the following condition: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the seventh lens satisfies the following condition: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the eighth lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the ninth lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the tenth lens radius of curvature is: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the eleventh lens satisfies the following condition: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the twelfth lens satisfies the following condition: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the thirteenth lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the fourteenth lens satisfies the following condition: nd is more than 1.45 and less than 1.65, and Vd is more than 30 and less than 85.
Optionally, the light path structure of the lens is a double telecentric structure.
The invention has the advantages that: guarantee that traditional dry film can high-efficient exposure, imaging quality satisfies the exposure requirement to it is convenient to adjust, only need remove one of them lens just can the accurate power of adjusting the camera lens, especially when adjusting the power, the position of exposure face remains unchanged, and is very convenient like this when carrying out the complete machine debugging, labour saving and time saving, stability is good.
The invention aims to provide an ultraviolet broad-spectrum lens for digital photoetching, which can cover a wavelength range of 360nm-410nm and accord with a spectral response range of a common dry film, so that a light source is replaced, and the broad-spectrum lens provided by the embodiment of the invention can be matched to etch the common dry film without using a special dry film, thereby greatly reducing the production cost.
Drawings
Fig. 1 is a schematic structural diagram of an ultraviolet broadband spectrum lithography lens according to an embodiment of the present invention;
fig. 2 is a Modulation Transfer Function (MTF) graph of an ultraviolet wide-spectrum lithography lens according to embodiment 1 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
Fig. 1 is a schematic structural diagram of an ultraviolet broadband spectrum lithography lens according to an embodiment of the present invention, as shown in fig. 1, the lens includes: an ultraviolet light source 10, a first lens group 20, a second lens group 30 and a third lens group 40 which are arranged in sequence from the ultraviolet light source 10 to a target, wherein,
the ultraviolet light source 10 emits ultraviolet light, so that the ultraviolet light irradiates on the light incident surface of the first lens group 20, the ultraviolet light source 10 includes a digital micro mirror 101 and a first lens 102, and the first lens 102 is a biconvex lens;
said first lens group 20 comprises: a first number of positive lenses and a second number of negative lenses sequentially arranged along the sequence from the ultraviolet light source 10 to the target, and the combined focal length of the first lens group 20 is positive, wherein the first number includes: fourth, the second quantity comprises: II, performing secondary filtration;
said second lens group 30 comprises: a third number of positive lenses and a fourth number of negative lenses sequentially arranged along the sequence from the ultraviolet light source 10 to the target, wherein the combined focal length of the second lens group 30 is positive, and the lens closest to the first lens group 20 in the second lens group 30 can move along the optical axis direction, wherein the third number comprises: third, the fourth number includes: II, performing secondary filtration;
the third lens group 40 includes: a fifth number of positive lenses sequentially arranged in the order from the ultraviolet light source 10 to the target, and the combined focal length of the third lens group 40 is positive, wherein the fifth number includes: and II, performing secondary treatment.
The exit light from third mirror group 40 impinges on target 60.
In a specific implementation manner of the embodiment of the present invention, the object plane side curvature radius of the first lens element 102 is: r is more than or equal to 90mm and less than or equal to infinity, and the radius of curvature on the image plane side of the first lens 102 is as follows: r is more than or equal to 90mm and less than or equal to infinity, wherein R is the curvature radius.
In a specific implementation manner of the embodiment of the present invention, the first lens group 20 includes: a second lens 201, a third lens 202, a fourth lens 203, a fifth lens 204, a sixth lens 205 and a seventh lens 206 arranged in sequence from the ultraviolet light source 10 to the target, wherein the curvature radius of the object plane side of the second lens 201 is: r is more than or equal to 90mm and less than or equal to infinity, and the curvature radius of the image plane side is as follows: r is more than or equal to 50mm and less than or equal to 200 mm;
the radius of curvature of the object plane side of the third lens 202 is: r is more than or equal to 100mm and less than or equal to 250mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 100mm and less than or equal to 500 mm;
the object plane side curvature radius of the fourth lens 203 is: r is more than or equal to 40mm and less than or equal to 80mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 200mm and less than or equal to infinity, wherein R is the curvature radius;
the object plane side curvature radius of the fifth lens element 204 is: r is more than or equal to 40mm and less than or equal to 80mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 150mm and less than or equal to infinity, wherein R is the curvature radius;
the object plane side curvature radius of the sixth lens element 205 is: 200mm < R < infinity, and an image side curvature radius of: r is more than or equal to 50mm and less than or equal to 150mm, wherein R is curvature radius;
the object plane side curvature radius of the seventh lens element 206 is: r is more than or equal to 100mm and less than or equal to 500mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 25mm and less than or equal to 60mm, wherein R is the curvature radius;
the second lens element, the third lens element, the fourth lens element, the fifth lens element and the sixth lens element are biconvex or planoconvex lenses, and the seventh lens element is a biconcave lens element.
In a specific implementation manner of the embodiment of the present invention, the second lens group 30 includes: the lens comprises an eighth lens 301, a ninth lens 302, a tenth lens 303, an eleventh lens 304 and a twelfth lens 305 which are sequentially arranged along the order from the ultraviolet light source 10 to a target, wherein the object plane side curvature radius of the eighth lens 301 is as follows: r is more than or equal to 200mm and less than or equal to infinity, and the curvature radius of the image plane side is as follows: r is more than or equal to 30mm and less than or equal to 100 mm;
the object plane side curvature radius of the ninth lens element 302 is: r is more than or equal to 30mm and less than or equal to 100mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 100mm and less than or equal to 300 mm;
the object plane side curvature radius of the tenth lens 303 is: r is more than or equal to 25mm and less than or equal to 60mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 30mm and less than or equal to 80 mm;
the object plane side radius of curvature of the eleventh lens element 304 is: r is more than or equal to 200mm and less than or equal to infinity, and the curvature radius of the image plane side is as follows: r is more than or equal to 20mm and less than or equal to 60.
The object-plane-side radius of curvature of the twelfth lens element 305 is: r is more than or equal to 25mm and less than or equal to 60mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 50mm and less than or equal to 150mm, and R is the curvature radius;
the eighth lens element and the eleventh lens element are biconvex or planoconvex lenses, the ninth lens element is a biconvex lens element, the tenth lens element and the eleventh lens element are meniscus lenses, and the twelfth lens element is a biconcave lens element.
In the position shown in fig. 1, when eighth lens element 301 in second lens group 30 moves up and down along the optical axis, the lens magnification can be finely adjusted and the working distance can be kept constant.
In a specific implementation manner of the embodiment of the present invention, the third lens group 40 includes: a thirteenth lens 401 and a fourteenth lens 402 sequentially arranged along the order from the ultraviolet light source 10 to the target, wherein the object plane side curvature radius of the thirteenth lens 401 is: r is more than or equal to 100mm and less than or equal to 800mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 50mm and less than or equal to 150 mm;
the object-plane-side radius of curvature of the fourteenth lens 402 is: r is more than or equal to 100mm and less than or equal to 200mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 200mm and less than or equal to infinity;
the thirteenth lens is a meniscus lens, and the fourteenth lens is a biconvex or plano-convex lens.
In a specific implementation manner of the embodiment of the present invention, the focal length relationship among the first lens 102, the first lens 102 group, the second lens group, and the third lens group is:
150≤F1≤300
50≤F2≤100
75≤F3≤125
75≤F4≤125
2≤F34/F12≤3
wherein F1 is the focal length of the first lens 102 in millimeters; f2 is the focal length of the first lens group 20 in millimeters; f3 is the focal length of second lens group 30 in millimeters; f4 is the focal length of the third lens group 40 in millimeters; f12 is the combined focal length of first lens 102 and first lens group 20, in millimeters; f34 is the combined focal length of second lens group 30 and third lens group 10, and has unit of millimeter.
In a specific implementation manner of the embodiment of the present invention, the magnification, the wavelength range, the object line field of view, and the object numerical aperture of the lens are respectively as follows:
1≤M≤3；
360nm≤W≤410nm；
15mm≤F≤25mm；
NA is more than or equal to 0.08 and less than or equal to 0.15, wherein,
m is the magnification of the lens; w is the wavelength range of the lens; f is the size of the object space line view field; NA is the numerical aperture of the object side of the lens digital micromirror 101.
In a specific implementation manner of the embodiment of the present invention, the distance between the first lens element 102, the digital micro mirror 101 and the first lens group 20 satisfies the following condition:
1mm＜d01＜20mm
45mm < d12 < 100mm, wherein d01 is the center-to-center distance between the first lens 102 and the digital micro-mirror 101; the d02 is the center distance between the digital micro mirror 101 and the second lens.
In a specific implementation manner of the embodiment of the present invention, the lens is composed of a first lens 102, a second lens 201, a third lens 202, a fourth lens 203, a fifth lens 204, a sixth lens 205, a seventh lens 206, an eighth lens 301, a ninth lens 302, a tenth lens 303, a tenth lens 304, a twelfth lens 305, a thirteenth lens 401 and a fourteenth lens 402, and the glass material satisfies the following conditions:
the first lens 102 satisfies the following condition: nd is more than 1.45 and less than 1.65, Vd is more than 30 and less than 85; wherein Nd is the optical refractive index, and Vd is the Abbe constant;
the second lens 201 satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the third lens 202 satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the fourth lens 203 satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the fifth lens 204 satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the sixth lens 205 satisfies the following condition: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the seventh lens 206 satisfies the following condition: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the eighth lens 301 satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the ninth lens 302 satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the curvature radius of the tenth lens 303 is: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the eleventh lens 304 satisfies the following condition: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the twelfth lens 305 satisfies the following condition: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the thirteenth lens 401 satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the fourteenth lens 402 satisfies the following condition: nd is more than 1.45 and less than 1.65, and Vd is more than 30 and less than 85.
In a specific implementation manner of the embodiment of the present invention, the optical path structure of the lens is a double-telecentric structure.
In order to filter out unnecessary light, a lens stop 50 is disposed between the first lens group 20 and the second lens group 30 in the uv-broad spectrum lithography lens.
In the present embodiment, the first lens group 20, the second lens group 30, and the third lens group 40 all use glass spherical single lens elements.
Example 1
Table 1 is a summary table of optical parameters of each lens in the lithography lens according to the embodiment of the present invention, as shown in table 1,
TABLE 1
The numbers of the surfaces are numbers of the side surfaces distributed in order from the object side surface of digital micromirror 101 to the object side surface of fourteenth lens 402 in fig. 1: for example, S1 is the object side number of the digital micromirror 101; s2 is the number of the object-side surface of the first lens element 102; s3 is the image-side surface number of the first lens element 102; s4 is the object-side number of the second lens element 201; s5 denotes the image-side surface number of the second lens 201.
Fig. 2 is a Modulation Transfer Function (MTF) diagram of an ultraviolet broadband spectrum lithography lens according to embodiment 1 of the present invention, as shown in fig. 2, where each field of view has curves in two directions, i.e., T and S, respectively, and T represents a transfer Function in a meridional direction, i.e., a beam profile passing through a pupil Y axis; s denotes the transfer function in the sagittal direction, i.e. the beam profile through the pupil X-axis. It can be seen that, within the full field of view, the optical modulation transfer function value at 46lp/mm in the embodiment of the present invention is greater than 0.6; an optical modulation transfer function value at 23lp/mm of greater than 0.8;
the embodiment of the invention can also be applied to the fields of screen printing and the like.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the present invention as defined by the appended claims.
Claims (10)
1. An ultraviolet broad spectrum lithography lens, said lens comprising: an ultraviolet light source, a first lens group, a second lens group and a third lens group which are arranged in sequence from the ultraviolet light source to a target,
the ultraviolet light source emits ultraviolet light so that the ultraviolet light irradiates on the light incident surface of the first lens group, the ultraviolet light source comprises a digital micro reflector and a first lens, and the first lens is a biconvex lens;
the first lens group includes: the first number of positive lenses and the second number of negative lenses that set gradually along the order of ultraviolet source to target, and the combination focus of first mirror group is positive, wherein, first quantity includes: fourth, the second quantity comprises: II, performing secondary filtration;
the second lens group includes: the third quantity positive lens and the fourth quantity negative lens that set gradually along ultraviolet source to the order of target, and the combination focus of second mirror group is positive, and the lens nearest apart from first mirror group in the second mirror group can be followed the optical axis direction and moved, wherein, the third quantity includes: third, the fourth number includes: II, performing secondary filtration;
the third lens group includes: a fifth number of positive lenses sequentially arranged in an order from the ultraviolet light source to the target, and a combined focal length of the third lens group is positive, wherein the fifth number includes: and II, performing secondary treatment.
2. The lens of claim 1, wherein the radius of curvature of the first lens at the object plane side is: r is more than or equal to 90mm and less than or equal to infinity, and the radius of curvature of the first lens on the image plane side is as follows: r is more than or equal to 90mm and less than or equal to infinity, wherein R is the curvature radius.
3. The lens of claim 2, wherein the first lens group comprises: a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens and a seventh lens which are arranged in sequence from the ultraviolet light source to the target, wherein,
the object plane side curvature radius of the second lens is as follows: r is more than or equal to 90mm and less than or equal to infinity, and the curvature radius of the image plane side is as follows: r is more than or equal to 50mm and less than or equal to 200 mm;
the object plane side curvature radius of the third lens is as follows: r is more than or equal to 100mm and less than or equal to 250mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 100mm and less than or equal to 500 mm;
the object plane side curvature radius of the fourth lens is as follows: r is more than or equal to 40mm and less than or equal to 80mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 200mm and less than or equal to infinity;
the object plane side curvature radius of the fifth lens is as follows: r is more than or equal to 40mm and less than or equal to 80mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 150mm and less than or equal to infinity;
the object plane side curvature radius of the sixth lens is as follows: r is more than or equal to 200mm and less than or equal to infinity, and the curvature radius of the image plane side is as follows: r is more than or equal to 50mm and less than or equal to 150 mm;
the object plane side curvature radius of the seventh lens is as follows: r is more than or equal to 100mm and less than or equal to 500mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 25mm and less than or equal to 60 mm;
the second lens element, the third lens element, the fourth lens element, the fifth lens element and the sixth lens element are biconvex or planoconvex lenses, and the seventh lens element is a biconcave lens element.
4. The lens of claim 3, wherein the second lens group 30 comprises: an eighth lens, a ninth lens, a tenth lens, an eleventh lens and a twelfth lens which are arranged in sequence from the ultraviolet light source to the target, wherein,
the object plane side curvature radius of the eighth lens is as follows: r is more than or equal to 200mm and less than or equal to infinity, and the curvature radius of the image plane side is as follows: r is more than or equal to 30mm and less than or equal to 100 mm;
the object plane side curvature radius of the ninth lens is as follows: r is more than or equal to 30mm and less than or equal to 100mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 100mm and less than or equal to 300 mm;
the object plane side curvature radius of the tenth lens is as follows: r is more than or equal to 25mm and less than or equal to 60mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 30mm and less than or equal to 80 mm;
the object plane side curvature radius of the eleventh lens is as follows: r is more than or equal to 200mm and less than or equal to infinity, and the curvature radius of the image plane side is as follows: r is more than or equal to 20mm and less than or equal to 60;
the object plane side curvature radius of the twelfth lens is as follows: r is more than or equal to 25mm and less than or equal to 60mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 50mm and less than or equal to 150 mm;
the eighth lens element and the eleventh lens element are biconvex or planoconvex lenses, the ninth lens element is a biconvex lens element, the tenth lens element and the eleventh lens element are meniscus lenses, and the twelfth lens element is a biconcave lens element.
5. The lens of claim 4, wherein the third lens group comprises: the thirteenth lens and the fourteenth lens are sequentially arranged along the sequence from the ultraviolet light source to the target, wherein the curvature radius of the object plane side of the thirteenth lens is as follows: r is more than or equal to 100mm and less than or equal to 800mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 50mm and less than or equal to 150 mm;
the object-plane-side radius of curvature of the fourteenth lens is: r is more than or equal to 100mm and less than or equal to 200mm, and the curvature radius of the image surface side is as follows: r is more than or equal to 200mm and less than or equal to infinity;
the thirteenth lens is a meniscus lens, and the fourteenth lens is a biconvex or plano-convex lens.
6. The lens of claim 5, wherein the focal length relationship among the first lens, the first lens group, the second lens group, and the third lens group is:
150≤F1≤300
50≤F2≤100
75≤F3≤125
75≤F4≤125
2≤F34/F12≤3
wherein F1 is the focal length of the first lens in millimeters; f2 is the focal length of the first lens group and has the unit of millimeter; f3 is the focal length of the second lens group, and the unit is millimeter; f4 is the focal length of the third lens group and has the unit of millimeter; f12 is the combined focal length of the first lens and the first lens group, in millimeters; f34 is the focal length of the second lens group and the third lens group, and the unit is millimeter.
7. The lens of claim 6, wherein the magnification, wavelength range, object-side line field of view, and object-side numerical aperture of the lens are respectively:
1≤M≤3；
360nm≤W≤410nm；
15mm≤F≤25mm；
NA is more than or equal to 0.08 and less than or equal to 0.15, wherein,
m is the magnification of the lens; w is the wavelength range of the lens; f is the size of the object space line view field; and NA is the numerical aperture of the object space on the digital micro-reflector side of the lens.
8. The lens of claim 6, wherein the distance between the first lens, the digital micro-mirror and the first lens group satisfies the following condition:
1mm＜d01＜20mm
45mm < d12 < 100mm, wherein d01 is the center-to-center distance between the first lens and the digital micro-mirror; the d02 is the center distance between the digital micro-mirror and the second lens.
9. The ultraviolet wide-spectrum lithography lens according to claim 5, wherein said lens is composed of a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, a seventh lens, an eighth lens, a ninth lens, a tenth lens, an eleventh lens, a twelfth lens, a thirteenth lens, and a fourteenth lens, and the glass material satisfies the following condition:
the first lens satisfies the following condition: nd is more than 1.45 and less than 1.65, Vd is more than 30 and less than 85; wherein Nd is the optical refractive index, and Vd is the Abbe constant;
the second lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the third lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the fourth lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the fifth lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the sixth lens satisfies the following condition: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the seventh lens satisfies the following condition: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the eighth lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the ninth lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the tenth lens radius of curvature is: nd is more than 1.5 and less than 1.65, Vd is more than 30 and less than 50;
the eleventh lens satisfies the following condition: nd is more than 1.5 and less than 1.65, and Vd is more than 30 and less than 50.
The twelfth lens satisfies the following condition: nd is more than 1.5 and less than 1.65, and Vd is more than 30 and less than 50.
The thirteenth lens satisfies the following condition: nd is more than 1.45 and less than 1.6, Vd is more than 50 and less than 85;
the fourteenth lens satisfies the following condition: nd is more than 1.45 and less than 1.65, Vd is more than 30 and less than 85; wherein Nd is the optical refractive index, and Vd is the Abbe constant.
10. The ultraviolet wide-spectrum lithography lens according to claim 5, wherein the optical path structure of said lens is a double telecentric structure.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113219793A (en) * | 2021-05-10 | 2021-08-06 | 合肥芯碁微电子装备股份有限公司 | Ultraviolet broad spectrum maskless photoetching imaging system and photoetching machine |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63155014A (en) * | 1986-12-04 | 1988-06-28 | エスヴィージー・リトグラフィー・システムズ・インコーポレイテッド | High performance lens useful in ultraviolet range of spectrum |
| JPH11352407A (en) * | 1998-06-05 | 1999-12-24 | Nikon Corp | Microscope objective lens |
| CN1424611A (en) * | 2001-12-12 | 2003-06-18 | 株式会社尼康 | Optical systems with wavelength selective devices |
| CN1666152A (en) * | 2002-05-03 | 2005-09-07 | 卡尔蔡司Smt股份公司 | Extremely high-aperture projection objectives |
-
2020
- 2020-05-15 CN CN202010413573.2A patent/CN111505912B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63155014A (en) * | 1986-12-04 | 1988-06-28 | エスヴィージー・リトグラフィー・システムズ・インコーポレイテッド | High performance lens useful in ultraviolet range of spectrum |
| JPH11352407A (en) * | 1998-06-05 | 1999-12-24 | Nikon Corp | Microscope objective lens |
| CN1424611A (en) * | 2001-12-12 | 2003-06-18 | 株式会社尼康 | Optical systems with wavelength selective devices |
| CN1666152A (en) * | 2002-05-03 | 2005-09-07 | 卡尔蔡司Smt股份公司 | Extremely high-aperture projection objectives |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113219793A (en) * | 2021-05-10 | 2021-08-06 | 合肥芯碁微电子装备股份有限公司 | Ultraviolet broad spectrum maskless photoetching imaging system and photoetching machine |
| CN113219793B (en) * | 2021-05-10 | 2022-06-14 | 合肥芯碁微电子装备股份有限公司 | Ultraviolet wide-spectrum maskless photoetching imaging system and photoetching machine |
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