CN111627875B - A high thermal conductivity heat dissipation device - Google Patents
A high thermal conductivity heat dissipation device Download PDFInfo
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- CN111627875B CN111627875B CN202010597812.4A CN202010597812A CN111627875B CN 111627875 B CN111627875 B CN 111627875B CN 202010597812 A CN202010597812 A CN 202010597812A CN 111627875 B CN111627875 B CN 111627875B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a high-heat-conductivity heat dissipation device which sequentially comprises a high-heat-conductivity bottom plate, a surrounding frame and a cover plate from bottom to top, wherein at least one layer of HTCC substrate is arranged on the high-heat-conductivity bottom plate and in the surrounding frame, at least one of the upper surface and the lower surface of the single-layer HTCC substrate is used for placing a heating device, and the heating device is not placed on the surface, connected with the high-heat-conductivity bottom plate, of the HTCC substrate. The high heat conduction heat dissipation device provided by the invention solves the heat dissipation problem of the high heat flux density heating chip of the microwave power module by utilizing the large-area HTCC substrate and the diamond aluminum bottom plate.
Description
Technical Field
The invention relates to the field of microwave power modules, in particular to a high-heat-conductivity heat dissipation device.
Background
The microwave power module is widely applied to the military and civil fields such as radar, electronic countermeasure, communication and the like, with the development of GaN third-generation semiconductor materials, the integration level and the power are continuously improved, the heating value of the microwave power module is increased by times, the heat flow density of an X-band power chip reaches 200W/cm < 2> or even higher, and great challenges are provided for module heat dissipation capacity, particularly heat conduction.
At present, in the domestic military or civil field, heat sinks of heating chips of microwave power modules are mainly made of tungsten-copper, copper-molybdenum-copper and other second-generation heat management materials, for example, copper-molybdenum-copper heat sink materials mentioned in a laminated structure heat sink material and a preparation method of a patent CN201310001249.X are three-layer composite, so that molybdenum-copper or tungsten-copper heat sinks are prepared. The patent CN200910213372.1 refers to a copper-molybdenum-copper heat sink material and a preparation method thereof. The package shell is made of one to three generations of thermal management materials such as kovar, aluminum silicon, etc., for example, the kovar alloy package shell mentioned in patent CN201810044629.4 "preparation method of kovar alloy wall for electronic packaging" and the aluminum silicon shell package material mentioned in patent CN 2015110812388. X "preparation method of gradient aluminum silicon electronic package material". In some high-end application fields, a fourth generation heat sink material such as diamond aluminum, diamond copper, etc. is gradually applied, for example, a heat sink material mentioned in patent CN201710434894.9 "a diamond-aluminum composite material used as an electronic packaging material", and a heat sink material mentioned in patent CN201520980982.5 "a diamond copper heat sink material". The diamond-based composite material, although having a thermal conductivity of up to about 600W/m/K, is about 3 times that of aluminum, and has the disadvantages of difficult processing and high cost due to the existence of diamond particles, and generally can only realize a flat plate structure by a grinding method. For the packaging shell of the microwave power module, a power supply and radio frequency interface is required to be designed so as to install a connecting terminal, and the microwave power module has a fine and complex structure such as threads, chamfers, stepped holes and the like, and can be completed only in a machining mode, so that the application of the diamond-based composite material on the packaging shell is limited, and therefore, the application of the diamond-based composite material on the packaging shell is not reported.
In addition, in the microwave power module, the LTCC substrate is widely applied, the available area of the power chip heat sink is gradually reduced along with the expansion of the substrate function and the improvement of the integration level, and the heat sink area is even equivalent to the chip in Ka and other high frequency bands, so that the heat sink does not play a role in heat expansion. Under the requirement of high heat conductivity, HTCC (High Temperature co-FIRED CERAMIC, high-temperature co-fired ceramic) substrates, such as the substrate material mentioned in patent CN201811144572.1, "a four-way microwave T/R assembly", and the HTCC substrate mentioned in patent CN201520794769.5, "a high-density assembly structure of TR assembly", also have the problem of insufficient heat spreading area of heat sink.
In view of the above, in order to improve the heat dissipation capability of the high-power microwave power module, it is needed to solve the technical problem of how to realize the application of the diamond-based high-heat-conductivity material as the package shell and how to improve the heat dissipation capability of the heat sink.
Disclosure of Invention
The invention aims to solve the problem and provides a high-heat-conductivity heat dissipation device which sequentially comprises a high-heat-conductivity bottom plate, a surrounding frame and a cover plate from bottom to top, wherein at least one layer of HTCC substrate is arranged on the high-heat-conductivity bottom plate and in the surrounding frame, at least one of the upper surface and the lower surface of the single-layer HTCC substrate is used for placing a heating device, and the heating device is not placed on the surface, connected with the high-heat-conductivity bottom plate, of the HTCC substrate.
Further, the heating device is a chip, and the power of any chip except the lowest chip is not more than the power of the chip below the chip.
Further, the high heat conduction bottom plate is made of a diamond aluminum composite material, and the difference value of the thermal expansion coefficients of the HTCC substrate and the high heat conduction bottom plate is more than or equal to-3 ppm/K and less than or equal to 3ppm/K.
Further, the HTCC substrate is a layer, a concave cavity is formed in the upper surface of the HTCC substrate, the concave cavity is used for placing chips, the surfaces of the chips in the concave cavity are located between the upper surface and the lower surface of the HTCC substrate, and the chips are distributed in a staggered mode in the vertical direction.
Further, a plurality of layers of HTCC substrates are arranged in the surrounding frame and stacked on the high heat conduction bottom plate, other chips except for the chips arranged on the upper surface of the uppermost layer of HTCC substrate are arranged through cavities on the surfaces of the HTCC substrates, the surfaces of the chips in the cavities are located between the upper surface and the lower surface of the HTCC substrate, and the chips are distributed in a staggered mode in the vertical direction.
Further, the bottom surface of enclosing the frame is provided with the locating pin, and punching and locating pin cooperation location are carried out at high heat conduction bottom plate relevant position.
Further, the enclosure frame is formed by using Al 6061 in the preparation process of the high-heat-conductivity bottom plate, and the cover plate is formed by using Al 4047.
Further, the enclosure frame uses aluminum AlSi50, and the cover plate uses AlSi27.
Further, the enclosure frame uses TC4, and the cover plate uses TA2.
Compared with the prior art, the invention has the following advantages:
(1) The problem of difficult heat expansion of a high heat flux density heating chip of a microwave power module is solved by utilizing a large-area HTCC substrate;
(2) The diamond/aluminum composite bottom plate is utilized to solve the problem of heat conduction temperature rise of the shell of the microwave power module, and meanwhile, the heat is effectively secondarily expanded, so that the heat flux density is further reduced, and the contact temperature rise between the module and the cold plate is reduced;
(3) By adopting the bottom plate, the enclosure frame and the cover plate of different types of materials and the composite connection, the problems of difficult processing, high density, high cost and the like caused by directly adopting high-heat-conductivity materials for the microwave power module are solved.
Drawings
Fig. 1 is an overall assembly view of the first embodiment.
Fig. 2 is an exploded view of the first embodiment.
Fig. 3 is an assembly view of the enclosure frame and the high thermal conductivity base plate of the first embodiment.
Fig. 4 is a schematic diagram of a conventional heat transfer mode of a microwave power module.
Fig. 5 is a schematic diagram of a heat transfer mode of a microwave power module to which the present invention is applied.
Fig. 6 is a partial schematic view of the first embodiment.
Fig. 7 is a cross-sectional view taken along A-A of fig. 6.
The reference numerals in the figures represent the meanings:
the high-heat-conductivity high-power chip comprises a cover plate 1, a surrounding frame 2, a high-heat-conductivity bottom plate 3, an upper HTCC substrate 4, a lower HTCC substrate 5, a low-power chip 6 and a high-power chip 7.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings.
Aspects of the invention are described in this disclosure with reference to the drawings, in which are shown a number of illustrative embodiments. The embodiments of the present disclosure are not necessarily intended to include all aspects of the invention. It should be understood that the various concepts and embodiments described above, as well as those described in more detail below, may be implemented in any of a number of ways, as the disclosed concepts and embodiments are not limited to any implementation. Additionally, some aspects of the disclosure may be used alone or in any suitable combination with other aspects of the disclosure.
Example 1
The schematic diagrams of the high-heat-conductivity heat dissipation device provided by the invention are shown in fig. 1 and 2, and the device sequentially comprises a high-heat-conductivity bottom plate 3, a surrounding frame 2 and a cover plate 1 from bottom to top. The device is internally packaged with an upper HTCC substrate 4 and a lower HTCC substrate 5, and a low-power chip 6 and a high-power chip 7 are arranged on the HTCC substrate 4 and the lower HTCC substrate 5.
The high heat conduction bottom plate 3 is made of a diamond aluminum composite material, and the thermal expansion coefficient of the bottom plate is matched with that of the HTCC substrate by adjusting the volume fraction of diamond. The thermal expansion coefficient of the common HTCC substrate is 4-5ppm/K (the ppm/K is the temperature coefficient), when the volume fraction of diamond in diamond aluminum reaches more than 70%, the thermal expansion coefficient of the diamond aluminum composite material can reach about 7ppm/K, and the requirement that the difference value of the thermal expansion coefficients of two layers of welding interfaces is more than or equal to-3 ppm/K and less than or equal to 3ppm/K is met. The surface of the high heat conduction bottom plate 3 can be directly formed into an aluminum metal layer in a preparation process such as high-pressure casting, and then the aluminum metal layer needs to be subsequently ground and then plated with metal layer such as titanium plating and copper plating if a pressure infiltration process is adopted, so that the requirement of soldering large-area connection with the HTCC substrate is met. The thickness of the single-side aluminum metal layer or the metal plating layer is controlled to be 50um, which is equivalent to the thickness of common gold-tin solder, the total thickness of the two sides is about 100um, the aluminum foil layer accounts for about 5 percent according to the total thickness of the common bottom plate which is calculated by 2mm, the thermal expansion coefficient of the whole bottom plate is little influenced, the thermal matching of the bottom plate and the HTCC substrate can be ensured, and the requirement of welding on surface metallization can be met. The high heat conduction bottom plate and the surrounding frame are connected by adopting soft soldering.
The upper HTCC substrate 4 has a far heat transfer path, and the upper surface can be surface-mounted or welded with the low-power chip 6, or the low-power chip 6 can be welded with the cavity 5-1, as shown in fig. 6 and 7, and the surface of the cavity 5-1 is located between the upper surface and the lower surface of the HTCC substrate. The heat transfer path of the lower layer HTCC substrate 5 is near, and high-power chips 7 arranged in an array can be welded, because the upper surface of the lower layer HTCC substrate 5 needs to be welded with the lower surface of the upper layer HTCC substrate 4 in a large area, only the upper surface of the lower layer HTCC substrate 5 can be used as a concave cavity 5-1, the high-power chips 7 are welded in the concave cavity 5-1, and the height of the chips welded in the concave cavity 5-1 is lower than that of the surface of the HTCC substrate 4. The lower HTCC substrate 5 is welded with the high heat conduction bottom plate 3, and a chip is not placed on the welding surface. The lower HTCC substrate 5 and the upper HTCC substrate 4 are connected by BGA or soldered over a large area. The heat transfer path is (low power chip 6→upper HTCC substrate 4) → (high power chip 7→lower HTCC substrate 5) →high thermal conductivity bottom plate 3. The small power chip 6 and the large power chip 7 are distributed in a staggered manner in the vertical direction, so that a reasonable heat dissipation path is formed.
The surrounding frame 2 and the cover plate 1 have various collocation options. If the low cost is considered preferentially, al6061 can be selected as the surrounding frame 2, the plating metal layer is avoided in the preparation process of the high heat conduction bottom plate 3 such as high pressure casting or pressure infiltration, al 4047 is selected as the cover plate 1, if the plating metal layer is compatible with the packaging shell process such as the original aluminum silicon, the aluminum silicon alloy (AlSi 50) can be selected as the surrounding frame 2, the plating nickel is plated and the plating metal is welded with the high heat conduction bottom plate 3, the aluminum silicon alloy (AlSi 27) can be selected as the cover plate 1, the titanium alloy (TC 4) can be selected as the surrounding frame 2, the connecting method is similar to that of the aluminum silicon alloy, and the titanium alloy (TA 2) can be selected as the cover plate 1. The surrounding frame 2 and the cover plate 1 are connected by adopting a laser gas seal welding process. As shown in fig. 3, when the enclosure frame 2 is made of aluminum-silicon alloy or titanium alloy, in order to ensure accurate fixation when the large-size enclosure frame and the high-heat-conductivity bottom plate 3 are welded, the bottom surface of the enclosure frame 2 is provided with round or quadrilateral positioning pins 2-1, and holes are punched at corresponding positions of the high-heat-conductivity bottom plate 3 for matching and positioning. The enclosure frame 2 and the high heat conduction bottom plate 3 are connected through soldering.
The integral connection process of the device comprises two-step welding and one-step seal welding, and specifically comprises the following steps:
firstly, welding the high-heat-conductivity bottom plate 3 and the surrounding frame 2, positioning and pairing, using a fixture, adopting the highest welding temperature, selecting gold-tin solder, and forming the packaging shell without the cover plate 1, wherein the welding temperature is about 283 ℃.
And secondly, connecting the chip and the HTCC substrate by using gold-tin solder or conductive silver adhesive with the temperature resistance of more than 300 ℃ on the HTCC substrate, wherein the connection comprises a high-power chip 7, a lower HTCC substrate 5, a low-power chip 6 and an upper HTCC substrate 4 to form 2 single-layer HTCC substrates with heating chips, and then, superposing the 2 single-layer HTCCs with the heating chips, and welding the single-layer HTCCs with the heating chips with a package shell in a large area, wherein tin-lead solder is selected, and the welding temperature is about 183 ℃.
Finally, the cover plate 1 and the packaging shell are subjected to laser gas seal welding, so that the air tightness requirement when the microwave power module is applied is ensured.
Example two
The embodiment is basically the same as the first embodiment, except that a cavity 5-1 is provided on the lower surface of the upper HTCC substrate, and a small power chip 6 is soldered in the cavity 5-1, and the surface of the small power chip 6 is located between the upper and lower surfaces of the HTCC substrate.
Example III
The present embodiment is basically the same as the first embodiment, except that the HTCC substrate in the present embodiment is a single layer. The lower power chip 6 is surface-mounted or welded on the upper surface of the single-layer HTCC substrate, and no chip is arranged on the surface connected with the high-heat-conductivity bottom plate 3.
The invention solves the problem of heat expansion of the high heat flux density heating chip of the microwave power module by utilizing the HTCC substrate with large area;
The invention solves the problem of the rise of the heat conduction temperature of the shell of the microwave power module by utilizing the diamond/aluminum composite bottom plate, and simultaneously effectively expands heat secondarily, further reduces the heat flux density and reduces the contact temperature rise between the module and the cold plate;
the invention solves the engineering use problems of difficult processing, high density, high cost and the like caused by directly adopting high heat conduction materials for the microwave power module by adopting the base plate, the enclosure frame and the cover plate of different types of materials and the composite connection.
Fig. 4 shows a conventional heat transfer mode, in which the heat transfer path is narrow and the thermal resistance is large, while the heat transfer mode of the third embodiment of the present invention is as shown in fig. 5, in which the heat transfer path is wide, the heat flow is low and the thermal resistance is small.
In summary, compared with the traditional molybdenum-copper heat sink and aluminum, aluminum-silicon or aluminum-carbon-silicon packaging shell, the high-heat-conductivity heat dissipation device provided by the invention has wide effective heat transfer path, can quickly reduce the high heat flux density at the chip to low heat flux density, has small total heat conduction resistance, meets the production and processing requirements of easy processing, light weight, economy, air tightness and the like by adopting the special composite structure design of the bottom plate, the surrounding frame and the cover plate, creates good preconditions for the cold plate or the radiator for subsequent heat exchange,
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (7)
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| CN111627875B true CN111627875B (en) | 2025-03-14 |
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| CN112164658A (en) * | 2020-09-07 | 2021-01-01 | 中国电子科技集团公司第十四研究所 | Manufacturing method of high-efficiency heat-dissipation high-frequency T/R assembly shell |
| CN112447611B (en) * | 2020-09-28 | 2022-05-31 | 中国电子科技集团公司第二十九研究所 | Local gold-plating enclosure frame structure and processing method thereof |
| CN114309854A (en) * | 2021-12-28 | 2022-04-12 | 中国科学院空天信息创新研究院 | Method and tool suitable for integrated brazing of multiple substrates of box body with two-sided open cavity |
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| CN110176439A (en) * | 2019-05-29 | 2019-08-27 | 中国电子科技集团公司第四十三研究所 | A kind of module SiP structure and its manufacturing method |
| CN212113698U (en) * | 2020-06-28 | 2020-12-08 | 中国电子科技集团公司第十四研究所 | A high thermal conductivity heat sink |
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| US10085364B2 (en) * | 2016-08-11 | 2018-09-25 | Seagate Technology Llc | SSD internal thermal transfer element |
| CN206223974U (en) * | 2016-12-14 | 2017-06-06 | 无锡华测电子系统有限公司 | A kind of chip transmitting-receiving subassembly with channel separation function |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110176439A (en) * | 2019-05-29 | 2019-08-27 | 中国电子科技集团公司第四十三研究所 | A kind of module SiP structure and its manufacturing method |
| CN212113698U (en) * | 2020-06-28 | 2020-12-08 | 中国电子科技集团公司第十四研究所 | A high thermal conductivity heat sink |
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