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CN111987088B - Organic substrate embedding packaging structure integrating antenna and radio frequency front end - Google Patents

Organic substrate embedding packaging structure integrating antenna and radio frequency front end Download PDF

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CN111987088B
CN111987088B CN201910437301.3A CN201910437301A CN111987088B CN 111987088 B CN111987088 B CN 111987088B CN 201910437301 A CN201910437301 A CN 201910437301A CN 111987088 B CN111987088 B CN 111987088B
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dielectric layer
core board
antenna
metal
package structure
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CN111987088A (en
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薛梅
王启东
曹立强
宋阳
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q19/00Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
    • H01Q19/10Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6661High-frequency adaptations for passive devices
    • H01L2223/6677High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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Abstract

An organic substrate embedded package structure integrating an antenna and a radio frequency front end, comprising: an antenna module; and a radio frequency front end module disposed below the antenna module, the radio frequency front end module comprising: the first core board comprises at least one through groove inside; at least one active chip, one side surface of which is an active surface and the other side surface of which is back metal, wherein the active chip is embedded in the through groove of the first core board; the first dielectric layer is arranged below the first core plate, and a through groove is arranged at a position corresponding to the through groove in the first core plate; the second core board is arranged below the first dielectric layer, and a plurality of component bonding pads are arranged on the upper surface of the second core board; one side of the active surface of the active chip faces downwards and is inversely arranged on a surface element device bonding pad on the second core plate; and the second dielectric layer is arranged above the first core plate, and a plurality of metallized blind holes are arranged in the second dielectric layer in a penetrating manner.

Description

集成天线和射频前端的有机基板埋入封装结构Organic substrate embedded package structure with integrated antenna and RF front end

技术领域technical field

本发明涉及半导体封装技术领域,尤其涉及了集成毫米波天线和射频前端的有机基板埋入封装结构。The invention relates to the technical field of semiconductor packaging, in particular to an organic substrate embedded packaging structure integrating a millimeter wave antenna and a radio frequency front end.

背景技术Background technique

为了提高集成度,国际半导体技术发展路线组织提出超越摩尔定律,旨在将处理器、存储器、射频模块、数字模块、模拟模块、光电模块、传感模块等集成在单一封装体中实现系统级封装(System in Package,SiP),如果将天线也集成在系统级封装中,则称为天线级封装(Antenna in Package,AiP)。In order to improve the integration level, the International Semiconductor Technology Development Route Organization proposes to surpass Moore's Law, aiming to integrate processors, memory, radio frequency modules, digital modules, analog modules, optoelectronic modules, sensing modules, etc. in a single package to achieve system-level packaging (System in Package, SiP), if the antenna is also integrated in a system-in-package, it is called an antenna-in-package (Antenna in Package, AiP).

目前对AiP的研究主要集中在单芯片收发机与天线的集成,然而,实现多芯片射频前端和天线阵列集成,面临如下技术问题:射频前端所用毫米波芯片多基于化合物半导体工艺,其有源面表面传输线和电感电容空气桥及背部接地要求使芯片的封装形式局限于引线键合,但是随着工作频率升高,键合线的寄生效应越发明显;同时,电子产品对封装体轻薄化和小型化需求不断提高,但轻薄化的封装结构限制了天线基底厚度,从而限制了天线性能的提高;此外,将天线与射频前端集成时,有源芯片与有源芯片间、天线与有源芯片间的电磁干扰性问题尤为严重;再有,大部分无源元件均表贴在主板上,占用了射频前端模块的面积。At present, the research on AiP mainly focuses on the integration of single-chip transceiver and antenna. However, the integration of multi-chip RF front-end and antenna array faces the following technical problems: the millimeter-wave chips used in the RF front-end are mostly based on compound semiconductor technology, and the active surface Surface transmission lines, inductance-capacitor air bridges and back grounding requirements limit chip packaging to wire bonding, but with the increase of operating frequency, the parasitic effect of bonding wires becomes more and more obvious; at the same time, electronic products have thinner and smaller packages. The demand for automation continues to increase, but the thin and light packaging structure limits the thickness of the antenna substrate, which limits the improvement of antenna performance; in addition, when the antenna is integrated with the RF front-end, the active chips and The problem of electromagnetic interference is particularly serious; in addition, most of the passive components are surface-mounted on the motherboard, occupying the area of the RF front-end module.

因此基于以上现有技术存在的问题,亟待研发针对化合物半导体有源芯片的、轻薄化、小型化、具有良好电磁兼容性且高性能的天线级封装结构。Therefore, based on the above problems in the prior art, there is an urgent need to develop an antenna-level packaging structure for compound semiconductor active chips that is light, thin, miniaturized, has good electromagnetic compatibility and high performance.

发明内容SUMMARY OF THE INVENTION

(一)要解决的技术问题(1) Technical problems to be solved

本发明提出了一种集成天线和射频前端的有机基板埋入封装结构,以至少部分满足毫米波波段中,基于化合物半导体有源芯片的天线级封装的小型化、轻薄化、高性能的要求。The present invention proposes an organic substrate embedded packaging structure integrating an antenna and a radio frequency front end to at least partially meet the requirements of miniaturization, thinness and high performance of an antenna-level package based on compound semiconductor active chips in the millimeter wave band.

(二)技术方案(2) Technical solutions

在本发明的一方面,一种集成天线和射频前端的有机基板埋入封装结构,包括:一天线模块;以及一射频前端模块,置于天线模块下方,所述射频前端模块包括:一号芯板,内部包括至少一通槽;至少一有源芯片,一侧表面为有源面,另一侧表面为背部金属,该有源芯片埋置于所述一号芯板的通槽中;一号介质层,置于一号芯板下方,与一号芯板中通槽的对应位置设置有通槽;二号芯板,置于一号介质层下方,上表面设置有多个元器件焊盘;其中,所述有源芯片有源面一侧朝下,倒装在所述二号芯板上表面元器件焊盘之上;二号介质层,置于一号芯板上方。In one aspect of the present invention, an organic substrate embedded package structure integrating an antenna and a radio frequency front end includes: an antenna module; and a radio frequency front end module placed under the antenna module, the radio frequency front end module comprising: a No. 1 core board, the interior includes at least one through groove; at least one active chip, one side surface is the active surface, the other side surface is the back metal, the active chip is embedded in the through groove of the No. 1 core board; No. 1 The dielectric layer is placed under the No. 1 core board, and a through slot is provided in the corresponding position of the through groove in the No. 1 core board; ; wherein, the active surface of the active chip faces down, and is flip-mounted on the surface component pads of the No. 2 core board; the No. 2 dielectric layer is placed above the No. 1 core board.

在进一步的方案中,所述的射频前端模块,还包括至少一表贴无源元件,所述表贴无源元件一侧有焊盘,埋置于一号芯板的通槽中,其中有焊盘一侧朝下,倒装在二号芯板上表面元器件焊盘之上。In a further solution, the RF front-end module further includes at least one surface-mount passive component, and the surface-mount passive component has a pad on one side and is embedded in the through groove of the No. 1 core board, in which there are The side of the pad is facing down, and it is flipped over the component pads on the surface of the No. 2 core board.

在进一步的方案中,所述的射频前端模块,还包括至少一单层电容器,所述单层电容器埋置于一号芯板的通槽中,倒装在二号芯板上表面元器件焊盘之上。In a further solution, the RF front-end module further includes at least one single-layer capacitor, the single-layer capacitor is embedded in the through groove of the No. on the plate.

在进一步的方案中,所述一号芯板的通槽的侧壁还镀有一号金属层,所述一号金属层与所述有源芯片间还配置一介质层。In a further solution, the side wall of the through groove of the No. 1 core board is further plated with a No. 1 metal layer, and a dielectric layer is further arranged between the No. 1 metal layer and the active chip.

在进一步的方案中,所述的二号芯板上穿设有多个电磁屏蔽孔栅,与所述一号金属层构成金属屏蔽腔。In a further solution, the No. 2 core board is provided with a plurality of electromagnetic shielding hole grids, and the No. 1 metal layer forms a metal shielding cavity.

在进一步的方案中,所述的有源芯片、埋入表贴无源元件和单层电容器通过二号芯板中的金属化盲孔与外围电路互连。In a further solution, the active chip, the embedded surface-mount passive component and the single-layer capacitor are interconnected with the peripheral circuit through metallized blind vias in the No. 2 core board.

在进一步的方案中,所述的射频前端模块还穿设有多个金属化通孔。In a further solution, the RF front-end module is further provided with a plurality of metallized through holes.

在进一步的方案中,所述的天线模块,包括:至少一天线单元;一周期性金属结构;二号金属层,所述周期性金属结构和二号金属层共同作为天线反射平面;此外,所述天线模块还包括:三号芯板,所述周期性金属结构电镀在其上表面;三号介质层,设置在三号芯板与二号金属层之间;四号介质层配置在天线单元和周期性金属结构之间。In a further solution, the antenna module includes: at least one antenna unit; a periodic metal structure; a No. 2 metal layer, the periodic metal structure and No. 2 metal layer jointly serve as an antenna reflection plane; The antenna module further comprises: a No. 3 core board, on which the periodic metal structure is electroplated; a No. 3 dielectric layer is arranged between the No. 3 core board and the No. 2 metal layer; the No. 4 dielectric layer is configured on the antenna unit and periodic metallic structures.

在进一步的方案中,所述有源芯片背部金属通过二号介质层的金属化盲孔与二号金属层连接。In a further solution, the metal on the backside of the active chip is connected to the second metal layer through metallized blind holes in the second dielectric layer.

在进一步的方案中,所述单层电容器的另一个电极通过二号介质层的金属化盲孔与二号金属层连接。In a further solution, the other electrode of the single-layer capacitor is connected to the second metal layer through the metallized blind hole of the second dielectric layer.

在进一步的方案中,所述的周期性金属结构为电磁结构,在设定毫米波波段内,具有同相反射特性。In a further solution, the periodic metal structure is an electromagnetic structure, which has in-phase reflection characteristics within a set millimeter wave band.

在进一步的方案中,所述天线单元与射频前端模块垂直放置,通过金属化通孔互连,用于降低天线模块与射频前端模块间的电磁干扰。In a further solution, the antenna unit and the radio frequency front-end module are placed vertically, and are interconnected through metallized through holes, so as to reduce electromagnetic interference between the antenna module and the radio frequency front-end module.

在进一步的方案中,所述的介质层为半固化片压合后固化而成。In a further solution, the dielectric layer is formed by pressing the prepreg and then curing.

在进一步的方案中,所述的二号芯板下表面还配置有多个焊球。In a further solution, a plurality of solder balls are also arranged on the lower surface of the No. 2 core board.

在本发明的另一方面,还提供了一种集成天线和射频前端的有机基板埋入封装结构的制备方法,包括:In another aspect of the present invention, a preparation method of an organic substrate embedded package structure integrating an antenna and a radio frequency front end is also provided, including:

将二号芯板上表面图形化,包括元器件焊盘、金属化盲孔捕捉焊盘以及互连线等。Pattern the surface of the No. 2 core board, including component pads, metallized blind hole capture pads, and interconnect lines.

将芯板放置于高温键合台上,通过打线机在元器件焊盘上加工金属凸点,并将金属凸点平整化至高度近似一致。The core board is placed on a high-temperature bonding table, metal bumps are processed on the component pads by a wire bonding machine, and the metal bumps are flattened to approximately the same height.

将有源芯片的有源面、表贴无源元件有焊盘的一面朝下,通过热压方式分别倒装在二号芯板上表面的金属凸点上,同时,将单层电容器也倒装在该芯板的上表面对应的金属凸点上;Put the active surface of the active chip and the surface-mounted passive component with the pad side down, and flip them on the metal bumps on the surface of the No. 2 core board by hot pressing. At the same time, the single-layer capacitor is also Flip-chip on the corresponding metal bumps on the upper surface of the core board;

在一号芯板内铣出有源芯片和表贴无源元件及单层电容器所埋入的通槽,在通槽侧壁镀上金属铜,同时在该芯板上下表面金属覆层通过光刻图形化;The active chips, surface-mounted passive components and single-layer capacitors are embedded in the through-slots milled in the No. 1 core board, and metal copper is plated on the sidewalls of the through-slots. At the same time, the metal coating on the upper and lower surfaces of the core board passes light engraving;

在下面一号芯板之下的一号介质层上钻出较一号芯板中通槽面积稍大的通槽;由上至下分别将一半固化片,一号芯板,另一半固化片,二号芯板叠放在一起,进行真空压合,高温固化后两个半固化片转变为二号介质层和一号介质层,Drill a slot with a slightly larger area than the through slot in the No. 1 core board on the No. 1 dielectric layer below the No. 1 core board; The No. 2 core boards are stacked together for vacuum lamination. After high temperature curing, the two prepregs are transformed into No. 2 dielectric layer and No. 1 dielectric layer.

在二号介质层加工金属化盲孔,在整个结构中加工金属化通孔,部分金属化盲孔用于电磁屏蔽,部分金属化盲孔用与电互连,金属化通孔用于电磁屏蔽和不同金属地平面间的互连。之后在一号芯板之上的二号介质层上表面镀二号金属层,用于作为射频前端模块中电子元器件的金属地平面。Process metallized blind holes in the second dielectric layer, process metallized through holes in the whole structure, partially metallized blind holes are used for electromagnetic shielding, partially metallized blind holes are used for electrical interconnection, and metallized through holes are used for electromagnetic shielding and interconnects between different metal ground planes. After that, the upper surface of the No. 2 dielectric layer on the No. 1 core board is plated with a No. 2 metal layer, which is used as a metal ground plane for the electronic components in the RF front-end module.

将三号芯板的上表面电镀一层周期性金属结构,同二号金属层共同作为天线单元的反射平面;The upper surface of the No. 3 core board is electroplated with a layer of periodic metal structure, which together with the No. 2 metal layer serves as the reflection plane of the antenna unit;

由上至下分别将一半固化片,三号芯板,另一半固化片,上述加工好的射频前端模块叠放在一起,进行真空压合,高温固化后半固化片转变为四号介质层和三号介质层,其中射频前端模块中的二号金属层朝上;The semi-cured sheet, No. 3 core board, the other semi-cured sheet, and the above-mentioned processed RF front-end modules are stacked together from top to bottom for vacuum lamination. After high temperature curing, the prepreg is transformed into No. 4 dielectric layer and No. 3 dielectric layer. , where the No. 2 metal layer in the RF front-end module faces upward;

在二号芯板中加工金属化盲孔,在整个结构中加工金属化通孔,金属化盲孔用做信号孔、电源孔和电磁屏蔽孔栅,金属化通孔用做天线的馈电孔;Process metallized blind holes in the No. 2 core board, process metallized through holes in the whole structure, metallized blind holes are used as signal holes, power holes and electromagnetic shielding grids, and metallized through holes are used as feed holes for antennas ;

将四号介质层上表面图形化,加工出天线单元;The upper surface of the No. 4 dielectric layer is patterned to process the antenna unit;

将二号芯板下表面图形化,然后在封装体上下表面分别涂上绿油,并在封装体底部装配表贴无源元件和焊球。The lower surface of the No. 2 core board is patterned, then green oil is applied to the upper and lower surfaces of the package body, and surface mount passive components and solder balls are assembled on the bottom of the package body.

(三)有益效果(3) Beneficial effects

采用有机芯板埋入结合倒装焊的封装方式,在满足芯片背部接金属地的条件下,显著降低使用引线键合引入的寄生效应,同时降低封装剖面。The packaging method of organic core board embedded and flip-chip bonding is adopted, and the parasitic effect introduced by the use of wire bonding is significantly reduced under the condition that the back of the chip is connected to the metal ground, and the package profile is reduced at the same time.

天线的反射平面是具有同相反射特性的周期性金属结构,可在低剖面的情况下提高天线带宽、增益和辐射效率。The reflection plane of the antenna is a periodic metal structure with in-phase reflection properties, which can improve the antenna bandwidth, gain and radiation efficiency in the case of low profile.

天线与射频前端垂直放置,通过金属化通孔互连,可有效降低天线与射频前端间的电磁干扰,且减小封装面积。The antenna and the RF front-end are placed vertically and interconnected through metallized through holes, which can effectively reduce the electromagnetic interference between the antenna and the RF front-end, and reduce the packaging area.

有源芯片埋入的腔侧壁均镀有金属层,结合金属孔栅结构可实现有源芯片间和有源芯片与天线间的良好电磁隔离。The sidewalls of the cavity where the active chips are buried are all plated with metal layers, and the combination of the metal hole grid structure can achieve good electromagnetic isolation between the active chips and between the active chips and the antenna.

在埋入的同一有机芯板中还埋入了表贴无源元件和单层电容器,实现了射频前端的高密度集成。Surface-mount passive components and single-layer capacitors are also embedded in the same organic core board, enabling high-density integration of the RF front-end.

附图说明Description of drawings

图1是本发明实施例一种集成天线和射频前端的有机基板埋入封装结构图。FIG. 1 is a structural diagram of an organic substrate embedded package integrating an antenna and a radio frequency front end according to an embodiment of the present invention.

图2是图1所示封装结构的制备步骤1的结构图。FIG. 2 is a structural diagram of a manufacturing step 1 of the package structure shown in FIG. 1 .

图3是图1所示封装结构的制备步骤2的结构图。FIG. 3 is a structural diagram of the preparation step 2 of the package structure shown in FIG. 1 .

图4是图1所示封装结构的制备步骤3的结构图。FIG. 4 is a structural diagram of a manufacturing step 3 of the package structure shown in FIG. 1 .

图5是图1所示封装结构的制备步骤4的结构图。FIG. 5 is a structural diagram of the preparation step 4 of the package structure shown in FIG. 1 .

图6是图1所示封装结构的制备步骤5的结构图。FIG. 6 is a structural diagram of the preparation step 5 of the package structure shown in FIG. 1 .

图7是图1所示封装结构的步骤5的另一个结构图。FIG. 7 is another structural diagram of step 5 of the packaging structure shown in FIG. 1 .

图8是图1所示封装结构的制备步骤6的结构图。FIG. 8 is a structural diagram of the preparation step 6 of the package structure shown in FIG. 1 .

图9是图1所示封装结构的制备步骤7的结构图。FIG. 9 is a structural diagram of the preparation step 7 of the package structure shown in FIG. 1 .

图10是图1所示封装结构的制备步骤8的结构图。FIG. 10 is a structural diagram of the preparation step 8 of the package structure shown in FIG. 1 .

【附图标记说明】[Description of reference numerals]

1一号芯板,11一号金属层,No. 1 core board, No. 11 metal layer,

2有源芯片,21芯片焊盘,22金属凸点,23有源芯片背部金属,2 active chips, 21 chip pads, 22 metal bumps, 23 active chip backside metal,

24埋入表贴无源元件,25表贴无源元件,26单层电容器,24 buried surface mount passive components, 25 surface mount passive components, 26 single-layer capacitors,

27单层电容器电极,27 single-layer capacitor electrodes,

3二号芯板,31电磁屏蔽孔栅,32金属化盲孔捕捉焊盘,33元件器焊盘35金属化盲孔,3 No. 2 core board, 31 electromagnetic shielding hole grid, 32 metallized blind hole capture pad, 33 component pad 35 metallized blind hole,

4一号介质层,4 No. 1 dielectric layer,

5二号介质层,51二号金属层,52金属化盲孔,53侧壁介质,54金属化通孔5 No. 2 dielectric layer, 51 No. 2 metal layer, 52 metallized blind hole, 53 sidewall dielectric, 54 metallized through hole

6三号芯板,61周期性金属结构,6 No. 3 core board, 61 Periodic metal structure,

7三号介质层,7 No. 3 dielectric layer,

8四号介质层,81天线单元,8 No. 4 dielectric layers, 81 antenna elements,

9金属化通孔,9 metallized vias,

10绿油层,10 green oil layers,

12焊球。12 solder balls.

具体实施方式Detailed ways

为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明作进一步的详细说明。In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

本发明公开了一种集成天线和射频前端的有机基板埋入封装结构,请参照图1,包括:一天线模块;以及一射频前端模块,置于天线模块下方,所述射频前端模块包括:一号芯板1,内部包括至少一通槽;至少一有源芯片2,一侧表面为有源面,另一侧表面为有源芯片背部金属23,该有源芯片2埋置于所述一号芯板1的通槽中;一号介质层4,置于一号芯板1下方,与一号芯板1中通槽的对应位置设置有通槽;二号芯板3,置于一号介质层4下方,上表面设置有多个元器件焊盘33;其中,所述有源芯片2有源面一侧朝下,倒装在所述二号芯板3上表面元器件焊盘33之上;二号介质层5,置于一号芯板1上方,二号介质层5内穿设有多个金属化盲孔52,用于作为射频前端模块元件连接金属地平面二号金属层51通道。The present invention discloses an organic substrate embedded packaging structure integrating an antenna and a radio frequency front end. Please refer to FIG. 1 , which includes: an antenna module; The number core board 1 includes at least one through slot inside; at least one active chip 2 has an active surface on one side and an active chip back metal 23 on the other side surface, and the active chip 2 is embedded in the number one In the through groove of the core board 1; the No. 1 dielectric layer 4 is placed under the No. 1 core board 1, and a through groove is provided at the corresponding position of the through groove in the No. 1 core board 1; the No. 2 core board 3 is placed on the No. 1 core board Below the dielectric layer 4, the upper surface is provided with a plurality of component pads 33; wherein, the active surface of the active chip 2 faces down, and is flip-mounted on the upper surface of the second core board 3. The component pads 33 The second dielectric layer 5 is placed above the first core board 1, and the second dielectric layer 5 is provided with a plurality of metallized blind holes 52, which are used as the radio frequency front-end module components to connect to the metal ground plane. The second metal layer 51 channels.

此外,一号芯板1的通槽的侧壁还镀有一号金属层11,一号金属层11与所述有源芯片2间还配置一介质层。在本发明的一个实施例中,所述的射频前端模块还包括至少一埋入表贴无源元件24,所述埋入表贴无源元件24一侧有焊盘,埋置于一号芯板1的通槽中,其中有焊盘一侧朝下,倒装在二号芯板3上表面元器件焊盘33之上,所述的射频前端模块还包括至少一单层电容器26,所述单层电容器26埋置于一号芯板1的通槽中,倒装在二号芯板3上表面元器件焊盘33之上。此外,二号芯板3上穿设有多个金属化盲孔35,有源芯片2可通过多个金属化盲孔35与外部电路相连接,同时,该二号芯板3还穿设有多个电磁屏蔽孔栅31,与一号金属层11一起构成金属屏蔽腔,用于屏蔽有源芯片2与其他有源芯片或天线单元81之间的电磁干扰。在该实施例中,一号芯板1埋入结合有源芯片2和埋入表贴无源元件24倒装焊的封装方式,在满足有源芯片2在背部接金属地的条件下,显著降低使用引线键合引入的寄生效应,同时降低封装剖面。In addition, the sidewall of the through groove of the No. 1 core board 1 is further plated with a No. 1 metal layer 11 , and a dielectric layer is also disposed between the No. 1 metal layer 11 and the active chip 2 . In an embodiment of the present invention, the RF front-end module further includes at least one embedded surface mount passive component 24, and the embedded surface mount passive component 24 has a pad on one side and is embedded in a No. 1 core. In the through slot of the board 1, the side with the pads faces down, and is flipped on the component pads 33 on the upper surface of the second core board 3. The RF front-end module also includes at least one single-layer capacitor 26, so The single-layer capacitor 26 is embedded in the through groove of the No. 1 core board 1 , and flip-chipped on the component pads 33 on the upper surface of the No. 2 core board 3 . In addition, the No. 2 core board 3 is provided with a plurality of metallized blind holes 35, and the active chip 2 can be connected to the external circuit through the plurality of metallized blind holes 35. At the same time, the No. 2 core board 3 is also drilled with The plurality of electromagnetic shielding hole grids 31 together with the No. 1 metal layer 11 constitute a metal shielding cavity for shielding electromagnetic interference between the active chip 2 and other active chips or antenna units 81 . In this embodiment, the No. 1 core board 1 is embedded and combined with the active chip 2 and the embedded surface-mount passive component 24 in a flip-chip packaging method. Under the condition that the active chip 2 is connected to the metal ground at the back, it is significantly Reduces parasitics introduced by using wire bonds while reducing package profile.

在本发明的一个实施例中,所述的天线模块,包括:至少一天线单元81;一周期性金属结构61,和二号金属51共同作为天线单元的反射平面;此外,所述天线模块还包括:三号芯板6,所述周期性金属结构61电镀在其上表面;三号介质层7和四号介质层8,分设在三号芯板6与二号金属层51之间,以及天线单元81和周期性金属结构61之间。In an embodiment of the present invention, the antenna module includes: at least one antenna unit 81; a periodic metal structure 61, which together with the second metal 51 serves as a reflection plane of the antenna unit; in addition, the antenna module also Including: No. 3 core board 6, the periodic metal structure 61 is electroplated on its upper surface; No. 3 dielectric layer 7 and No. 4 dielectric layer 8, respectively arranged between No. 3 core board 6 and No. 2 metal layer 51, and Between the antenna element 81 and the periodic metal structure 61 .

在本发明的一个实施例中,所述的周期性金属结构61为电磁结构,在设定毫米波波段内,具有同相反射特性,所述天线单元81与射频前端模块垂直放置,通过金属化通孔9互连,用于降低天线模块与射频前端模块间的电磁干扰。In an embodiment of the present invention, the periodic metal structure 61 is an electromagnetic structure, and has in-phase reflection characteristics in the set millimeter wave band. The antenna unit 81 is placed vertically with the radio frequency front-end module, and the The holes 9 are interconnected to reduce electromagnetic interference between the antenna module and the RF front-end module.

此外,所述的二号芯板3下表面还配置有多个焊球12,用于连接外部电路。In addition, a plurality of solder balls 12 are arranged on the lower surface of the second core board 3 for connecting to external circuits.

优选的,封装结构中所述的介质层为半固化片压合后固化而成。Preferably, the dielectric layer in the encapsulation structure is formed by pressing a prepreg and then curing.

本发明还公开了所述封装结构的制备步骤,以下将结合附图按步骤描述本发明所提供的封装结构的详细制备方法,在下面的描述中,为便于解释,阐述了许多具体的细节以提供对本发明实施例的全面理解。然而明显地,一个或多个实施例在没有这些具体细节的情况下也可以被实施。本领域技术人员应当知晓的是,下述的具体细节不应理解为对发明的限定。The present invention also discloses the preparation steps of the encapsulation structure. The following will describe the detailed preparation method of the encapsulation structure provided by the present invention step by step with reference to the accompanying drawings. Provides a comprehensive understanding of embodiments of the present invention. Obviously, however, one or more embodiments may be practiced without these specific details. It should be appreciated by those skilled in the art that the following specific details should not be construed as limitations of the invention.

所示制备步骤,包括:The preparation steps shown include:

步骤1,请参照图2,在二号芯板3上表面图形化,其中包括元器件焊盘33、金属化盲孔捕捉焊盘32以及互连线等。Step 1, please refer to FIG. 2, pattern on the top surface of the second core board 3, which includes component pads 33, metallized blind via capture pads 32, interconnect lines and the like.

步骤2,请参照图3,将二号芯板3放置于高温键合台上,通过打线机在元器件焊盘33上加工金属凸点22,并将金属凸点22平整化至高度近似一致。Step 2, please refer to FIG. 3, place the No. 2 core board 3 on the high-temperature bonding table, process the metal bumps 22 on the component pads 33 by a wire bonding machine, and flatten the metal bumps 22 to an approximate height Consistent.

步骤3,请参照图4,将有源芯片2的有源面、埋入表贴无源元件24有焊盘的一面朝下,通过热压方式分别倒装在二号芯板3的上表面,同时,将单层电容器26也倒装在三号芯板3的上表面。其中,有源芯片2背部金属23为有源芯片2具有的背部金属,单层电容器电极27为单层电容器26具有的的一个电极,在本发明的实施例中,有源芯片2、埋入表贴无源元件24和单层电容器26需厚度相近,便于封装。Step 3, please refer to FIG. 4, place the active surface of the active chip 2 and the surface-mounted passive component 24 with the pads facing down, and flip them on the No. 2 core board 3 by hot pressing. At the same time, the single-layer capacitor 26 is also flip-chipped on the upper surface of the third core board 3 . The back metal 23 of the active chip 2 is the back metal of the active chip 2, and the single-layer capacitor electrode 27 is an electrode of the single-layer capacitor 26. In the embodiment of the present invention, the active chip 2, buried The surface mount passive component 24 and the single-layer capacitor 26 need to have similar thicknesses, which is convenient for packaging.

步骤4,请参照图5,利用激光铣槽的方法在一号芯板1制造出有源芯片2和表贴无源元件24所埋入的通槽,在本发明的实施例中,通槽面积应比所埋入器件面积稍大,在通槽侧壁镀上一号金属层11,并将一号芯板1的上下表面金属覆层通过光刻图形化。Step 4, please refer to FIG. 5, use the method of laser milling groove to manufacture the through groove in which the active chip 2 and the surface mount passive component 24 are embedded. In the embodiment of the present invention, the through groove is The area should be slightly larger than that of the embedded device, a No. 1 metal layer 11 is plated on the sidewall of the through groove, and the upper and lower surfaces of the No. 1 core board 1 are patterned by photolithography.

步骤5,请参照图6和图7,由上至下分别将一半固化片,一号芯板1,另一半固化片,二号芯板3,叠放在一起,进行真空压合,高温固化后一半固化片转变为一号介质层4,另一半固化片转变为二号介质层5;其中所述的转化为一号介质层4的半固化片上,用激光铣出较二号芯板1中通槽面积稍大的通槽,其中三号芯板3上表面倒装有源芯片2,埋入表贴无源元件24和单层电容器26。Step 5, please refer to Fig. 6 and Fig. 7, from top to bottom, stack the semi-cured sheet, No. 1 core board 1, the other semi-cured sheet, and No. 2 core board 3, stack them together, perform vacuum pressing, and then cure at high temperature. The prepreg is transformed into No. 1 dielectric layer 4, and the other prepreg is transformed into No. 2 dielectric layer 5; on the prepreg converted into No. 1 dielectric layer 4, the area of the through grooves in the No. 2 core board 1 is slightly cut by laser milling. A large through groove, in which the upper surface of the No. 3 core board 3 is flipped with the active chip 2, and the surface-mount passive components 24 and the single-layer capacitor 26 are buried.

步骤6,请参照图8,在二号介质层5中制作金属化盲孔52和金属化通孔54,其中金属化盲孔52包括有源芯片背部金属23接地的金属化盲孔、单层电容器26另一单层电容器电极27接地的金属化盲孔以及用于电磁屏蔽的金属孔栅。金属化通孔54主要是接地孔,之后图形化二号介质层5上表面,形成二号金属层51;Step 6, please refer to FIG. 8 , make metallized blind holes 52 and metallized through holes 54 in the No. 2 dielectric layer 5, wherein the metallized blind holes 52 include metallized blind holes whose backside metal 23 of the active chip is grounded, a single-layer metallized blind hole Another single-layer capacitor electrode 27 of the capacitor 26 is a metallized blind hole grounded, and a metal hole grid for electromagnetic shielding. The metallized through holes 54 are mainly ground holes, and then the upper surface of the second dielectric layer 5 is patterned to form the second metal layer 51;

步骤7,请参照图9,在三号芯板6的上表面通过光刻图形化,然后在上表面电镀周期性金属结构61,在本发明的实施例中,所述周期性金属结构61在设定毫米波波段内具有同相反射特性。Step 7, please refer to FIG. 9, pattern the upper surface of the No. 3 core board 6 by photolithography, and then electroplate the periodic metal structure 61 on the upper surface. In the embodiment of the present invention, the periodic metal structure 61 is Set the in-phase reflection characteristic in the millimeter wave band.

步骤8,请参照图10,由上至下分别将一半固化片,三号芯板6,另一半固化片以及上述加工的射频前端模块叠放在一起,进行真空压合,高温固化后一半固化片转变为三号介质层7,另一半固化片转变为四号介质层8,其中射频前端模块的二号金属层51朝上。Step 8, please refer to FIG. 10, from top to bottom, stack the semi-cured sheet, the No. 3 core board 6, the other semi-cured sheet and the RF front-end module processed above, and perform vacuum pressing. After high temperature curing, the semi-cured sheet is transformed into No. 3 dielectric layer 7, the other prepreg is transformed into No. 4 dielectric layer 8, wherein the No. 2 metal layer 51 of the RF front-end module faces upward.

步骤9,请再参照图1,在二号芯板3中加工金属化盲孔35,在整个结构中加工金属化通孔9,金属化盲孔35主要用作信号孔和电源孔,以及电磁屏蔽孔栅31,该电磁屏蔽孔栅31与一号金属层11构成金属屏蔽腔,金属化通孔9作为天线的馈电孔,将四号介质层8上表面图形化,加工出天线单元81,其中天线单元81与射频前端垂直放置,通过金属化通孔9互连,用于降低天线与射频前端间的电磁干扰,然后在其上下表面分别涂上绿油层10,同时,将二号芯板3下表面图形化,在封装体底部装配表贴无源元件25和焊球12。Step 9, please refer to FIG. 1 again, process metallized blind holes 35 in the second core board 3, and process metallized through holes 9 in the whole structure. The metallized blind holes 35 are mainly used as signal holes and power holes, as well as electromagnetic holes. The shielding hole grid 31, the electromagnetic shielding hole grid 31 and the No. 1 metal layer 11 form a metal shielding cavity, the metallized through hole 9 is used as the feeding hole of the antenna, the upper surface of the No. 4 dielectric layer 8 is patterned, and the antenna unit 81 is processed. , wherein the antenna unit 81 is placed vertically with the radio frequency front end, and is interconnected through metallized through holes 9 to reduce the electromagnetic interference between the antenna and the radio frequency front end, and then coat the upper and lower surfaces of the green oil layer 10 respectively. The lower surface of the board 3 is patterned, and the surface mount passive components 25 and the solder balls 12 are assembled on the bottom of the package.

以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The specific embodiments described above further describe the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above-mentioned specific embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention. Within the spirit and principle of the present invention, any modifications, equivalent replacements, improvements, etc. made should be included within the protection scope of the present invention.

Claims (13)

1. An organic substrate embedded package structure integrating an antenna and a radio frequency front end, comprising:
an antenna module; and
a radio frequency front end module disposed below the antenna module, comprising:
the first core board comprises at least one through groove inside;
at least one active chip, one side surface of which is an active surface and the other side surface of which is back metal, wherein the active chip is embedded in the through groove of the first core board;
the first dielectric layer is arranged below the first core plate, and a through groove is arranged at a position corresponding to the through groove in the first core plate;
the second core board is arranged below the first dielectric layer, and the upper surface of the second core board is provided with a plurality of component bonding pads and an interconnection structure;
the second dielectric layer is arranged above the first core plate, and a plurality of metallized blind holes are arranged in the second dielectric layer in a penetrating manner;
at least one surface-mounted passive element, wherein one side of the surface-mounted passive element is provided with a bonding pad and is embedded in the through groove of the first core plate, one side of the bonding pad faces downwards and is inversely arranged on the bonding pad of the surface element device on the second core plate;
the single-layer capacitor is embedded in the through groove of the first core plate and is inversely arranged on the surface element bonding pad on the second core plate;
and one side of the active surface of the active chip faces downwards and is inversely arranged on the surface element bonding pad on the second core plate.
2. The package structure of claim 1, wherein a sidewall of the through-slot of the core board is further plated with a metal layer, and a dielectric layer is further disposed between the metal layer and the active chip.
3. The package structure of claim 2, wherein a plurality of electromagnetic shielding grids are formed through the second core board, and form a metal shielding cavity with the first metal layer.
4. The package structure of claim 1, wherein the second core board has a plurality of blind metallized vias formed therethrough, and the active chip, the embedded surface-mount passive component and the single-layer capacitor are interconnected to the peripheral circuit through the blind metallized vias in the second core board.
5. The package structure of claim 1, wherein the RF front-end module further comprises a plurality of metallized through holes.
6. The package structure of claim 1, wherein the antenna module comprises:
at least one antenna element;
a layer of periodic metal structure;
and the second metal layer and the periodic metal structure are jointly used as an antenna reflection plane.
7. The package structure of claim 6, wherein the active die back metal is connected to the metal layer II through a metalized blind via of the dielectric layer II.
8. The package structure of claim 6, wherein the other electrode of the single layer capacitor is connected to the metal layer II through a blind via metallization of the dielectric layer II.
9. The package structure of claim 6, wherein the antenna module further comprises
The third core plate, the periodic metal structure is electroplated on the upper surface;
the third dielectric layer is arranged between the third core plate and the second metal layer;
and the fourth dielectric layer is arranged between the antenna unit and the periodic metal structure.
10. The package structure of claim 6, wherein the periodic metal structure is an electromagnetic structure having in-phase reflection characteristics in a given millimeter wave band.
11. The package structure of claim 6, wherein the antenna unit is vertically disposed with respect to the RF front end module and interconnected by a metallized via for reducing electromagnetic interference between the antenna module and the RF front end module.
12. The package structure according to any one of claims 1, 2 and 9, wherein the dielectric layer is formed by laminating and curing prepregs.
13. The package structure of claim 1, wherein a plurality of solder balls are further disposed on a lower surface of the second core board.
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