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CN112117242B - Chip package structure and manufacturing method thereof - Google Patents

Chip package structure and manufacturing method thereof Download PDF

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Publication number
CN112117242B
CN112117242B CN201910536027.5A CN201910536027A CN112117242B CN 112117242 B CN112117242 B CN 112117242B CN 201910536027 A CN201910536027 A CN 201910536027A CN 112117242 B CN112117242 B CN 112117242B
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chip
film layer
base island
base
island
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CN112117242A (en
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程成
刘怡
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73257Bump and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The invention discloses a chip packaging structure and a manufacturing method thereof. The chip packaging structure comprises a base island, packaging materials, a first chip attached to the upper surface of the base island and a second chip arranged far away from the upper surface of the base island compared with the first chip, and is characterized by further comprising a base film layer arranged on the lower surface of the second chip and a plurality of connecting columns, wherein the upper ends of the connecting columns are planted on the base film layer, the lower ends of the connecting columns are welded to the upper surface of the base island, and the packaging materials encapsulate the first chip and the second chip and are filled between the base island and the second chip. Through the arrangement of the substrate film layer and the planting of the connecting column, the packaging material can wrap around the connecting column and fill in a gap between the second chip and the base island, so that smooth discharge of gas in the wrapping process is facilitated, and the void phenomenon is avoided; and, the upper end of spliced pole is planted and is established in the basement rete and its lower extreme welds to the base island on for the spliced pole steadiness is strong, avoids the spliced pole to drop or shift.

Description

芯片封装结构及其制造方法Chip package structure and manufacturing method thereof

技术领域technical field

本发明属于芯片封装技术领域,涉及一种芯片封装结构及其制造方法。The invention belongs to the technical field of chip packaging, and relates to a chip packaging structure and a manufacturing method thereof.

背景技术Background technique

现代电子信息技术飞速发展,电子产品向小型化、便携化、多功能化方向发展,这驱使半导体封装产品具有小型化的发展趋势,这就需要封装设计最大限度地利用封装空间,缩小半导体封装产品的尺寸。With the rapid development of modern electronic information technology, electronic products are developing in the direction of miniaturization, portability and multi-function, which drives the development trend of miniaturization of semiconductor packaging products, which requires packaging design to maximize the use of packaging space and reduce the size of semiconductor packaging products size of.

现有的封装结构中,当具有多个芯片时,通常会出现在一个芯片上堆叠另一个芯片的情况,为错开打线路径,避免引线碰线而造成不良的问题,通常上一个芯片会出现部分悬空的现象,为了避免悬空区域在打线时出现芯片破碎、断裂的问题,需要在芯片悬空区域下方设置垫片来支撑、架高悬空的芯片。以图1和图2所示具有两个芯片(芯片211和芯片212)的封装结构200为例,该封装结构200还包括引线框架和多条引线230,所述引线框架具体包括基岛221和管脚222,基岛221用于固定支撑芯片211和芯片212。其中,芯片211、芯片212、管脚222的中的两两之间可以通过引线230实现电性连接。如前所述,芯片212通过垫片250架高,芯片212悬空区域在打线时出现芯片破碎、断裂的问题。In the existing packaging structure, when there are multiple chips, it usually occurs that another chip is stacked on top of one chip. In order to stagger the wiring path and avoid the bad problem caused by the lead wire touching the wire, usually the previous chip will appear The phenomenon of partial suspension, in order to avoid chip breakage and breakage in the suspension area during wiring, it is necessary to set up a gasket under the suspension area of the chip to support and elevate the suspended chip. Taking the package structure 200 with two chips (chip 211 and chip 212) shown in Figure 1 and Figure 2 as an example, the package structure 200 also includes a lead frame and a plurality of leads 230, and the lead frame specifically includes a base island 221 and a The pins 222 and the base island 221 are used to fix and support the chip 211 and the chip 212 . Wherein, two of the chip 211 , the chip 212 , and the pin 222 can be electrically connected through the wire 230 . As mentioned above, the chip 212 is elevated by the spacer 250 , and the chip 212 is broken or broken when the wire is bonded in the suspended area.

但是,现有的封装结构,如图,芯片212通过垫片250架高后,垫片250和位于下层的芯片211之间通常留有一定狭缝S,在制造过程的包封工序时,封装料240需从狭缝S的两端S1、S2向狭缝S内回包,往往导致狭缝S内气体因无法正常排出而造成气体残留,进而产生空洞问题,影响产品质量。However, in the existing packaging structure, as shown in the figure, after the chip 212 is elevated by the spacer 250, there is usually a certain slit S between the spacer 250 and the chip 211 located on the lower layer. During the encapsulation process of the manufacturing process, the package The material 240 needs to be wrapped back into the slit S from the two ends S1 and S2 of the slit S, which often results in gas residues in the slit S because the gas cannot be discharged normally, resulting in voids and affecting product quality.

发明内容Contents of the invention

为解决现有技术中芯片架高后包封时气体残留造成的空洞问题,本发明的目的在于提供一种芯片封装结构及其制造方法,其能够在芯片架高的同时,避免空洞现象的发生。In order to solve the problem of voids caused by gas residues in the prior art when the chip is elevated and packaged, the purpose of the present invention is to provide a chip packaging structure and a manufacturing method thereof, which can avoid the occurrence of voids while the chip is elevated .

为实现上述发明目的之一,本发明一实施方式提供了一种芯片封装结构,包括基岛、封装料、贴装在所述基岛上表面的第一芯片以及相较于所述第一芯片远离所述基岛的上表面布设的第二芯片,所述芯片封装结构还包括基底膜层和多个连接柱,所述基底膜层设于所述第二芯片的下表面,所述连接柱的上端植设于所述基底膜层且其下端焊接于所述基岛的上表面,所述封装料包封所述第一芯片和所述第二芯片并填充于所述基岛和所述第二芯片之间。In order to achieve one of the objectives of the above invention, an embodiment of the present invention provides a chip packaging structure, including a base island, a packaging material, a first chip mounted on the upper surface of the base island, and a The second chip arranged away from the upper surface of the base island, the chip packaging structure also includes a base film layer and a plurality of connecting posts, the base film layer is arranged on the lower surface of the second chip, and the connecting posts The upper end is planted on the base film layer and the lower end is welded on the upper surface of the base island, the encapsulation material encapsulates the first chip and the second chip and fills the base island and the between the second chips.

作为本发明一实施方式的进一步改进,任意两个所述连接柱彼此分离不相接触。As a further improvement of an embodiment of the present invention, any two connecting posts are separated from each other and do not contact each other.

作为本发明一实施方式的进一步改进,所述基底膜层设置为溅镀金属薄膜;As a further improvement in one embodiment of the present invention, the base film layer is set as a sputtered metal film;

所述连接柱包括金属柱和植于所述金属柱下端的凸点,所述连接柱通过所述凸点焊接于所述基岛的上表面。The connection post includes a metal post and a bump planted on the lower end of the metal post, and the connection post is welded to the upper surface of the base island through the bump.

作为本发明一实施方式的进一步改进,所述第二芯片的上表面为电信号功能面;所述第一芯片的上表面为电信号功能面;As a further improvement of an embodiment of the present invention, the upper surface of the second chip is an electrical signal functional surface; the upper surface of the first chip is an electrical signal functional surface;

所述封装结构还包括管脚,所述第二芯片、所述管脚、所述第一芯片的中任意两者之间通过引线建立电性连接;The packaging structure further includes pins, and any two of the second chip, the pins, and the first chip are electrically connected through wires;

所述封装料还包封所述引线并覆盖所述管脚的上表面。The encapsulation compound also encapsulates the leads and covers the upper surface of the pins.

作为本发明一实施方式的进一步改进,所述第一芯片通过装片胶贴装在所述基岛的上表面;As a further improvement of an embodiment of the present invention, the first chip is mounted on the upper surface of the base island by a die-mount adhesive;

所述第二芯片的一部分与所述第一芯片的一部分上下重叠布设,且二者之间填充有装片胶。A part of the second chip and a part of the first chip are overlapped up and down, and a mounting glue is filled between the two.

为实现上述发明目的之一,本发明一实施方式还提供了一种芯片封装结构的制造方法,包括:In order to achieve one of the purposes of the above invention, an embodiment of the present invention also provides a method for manufacturing a chip packaging structure, including:

在第二芯片的第一表面成型出基底膜层;forming a base film layer on the first surface of the second chip;

在所述基底膜层上植设多个连接柱;planting a plurality of connection posts on the basement membrane layer;

将第一芯片贴装于基岛的上表面;mounting the first chip on the upper surface of the base island;

将所述连接柱焊接至所述基岛的上表面,以使所述第二芯片固装至所述基岛;welding the connection post to the upper surface of the base island, so that the second chip is fixed to the base island;

利用封装料进行包封,以制得芯片封装结构。Encapsulating with an encapsulating material to obtain a chip encapsulating structure.

作为本发明一实施方式的进一步改进,步骤“在第二芯片的第一表面成型出基底膜层”包括:As a further improvement in one embodiment of the present invention, the step "forming a base film layer on the first surface of the second chip" includes:

在第二芯片的第二表面贴附保护膜,所述第二表面与所述第一表面相对设置且为第二芯片的电信号功能面;Attaching a protective film on the second surface of the second chip, the second surface is opposite to the first surface and is the electrical signal functional surface of the second chip;

研磨并超声波清洗所述第二芯片的第一表面;grinding and ultrasonically cleaning the first surface of the second chip;

在所述第二芯片的第一表面溅镀成型出基底膜层。A base film layer is formed by sputtering on the first surface of the second chip.

作为本发明一实施方式的进一步改进,步骤“在所述基底膜层上植设多个连接柱”包括:As a further improvement of one embodiment of the present invention, the step "implanting a plurality of connecting posts on the basement membrane layer" includes:

在所述基底膜层上布设感光干膜;Laying a photosensitive dry film on the base film layer;

对所述感光干膜进行分区曝光显影,使所述感光干膜图案化出暴露所述基底膜层的多个植柱开口;Partial exposure and development of the photosensitive dry film, so that the photosensitive dry film is patterned to form a plurality of pillar openings exposing the base film layer;

在所述植柱开口处先后植设金属柱和凸点,以得到连接柱;successively planting metal posts and bumps at the openings of the planting posts to obtain connecting posts;

从植有所述连接柱的所述基底膜层上去除所述感光干膜。removing the photosensitive dry film from the basement film layer planted with the connecting posts.

作为本发明一实施方式的进一步改进,任意两个所述连接柱彼此分离不相接触。As a further improvement of an embodiment of the present invention, any two connecting posts are separated from each other and do not contact each other.

作为本发明一实施方式的进一步改进,在利用所述封装料进行包封之前,将所述第一芯片、所述第二芯片、管脚的其中至少两个之间通过引线建立电性连接;As a further improvement of an embodiment of the present invention, before encapsulating with the encapsulation compound, at least two of the first chip, the second chip, and the pins are electrically connected through wires;

步骤“在第二芯片的第一表面成型出基底膜层”以及步骤“在所述基底膜层上植设多个连接柱”中,多个第二芯片集成于同一晶圆同步批量进行;并在步骤“将所述连接柱焊接至所述基岛的上表面,以使所述第二芯片固装至所述基岛”之前,将多个所述第二芯片自所述晶圆上切割分离开。In the step "forming a base film layer on the first surface of the second chip" and the step "planting a plurality of connection posts on the base film layer", multiple second chips are integrated on the same wafer and performed simultaneously in batches; and Slicing a plurality of the second chips from the wafer before the step of "soldering the connection posts to the upper surface of the base island so that the second chips are fixed to the base island" separated.

与现有技术相比,本发明的有益效果在于:通过设置所述基底膜层和植设多个所述连接柱,使需要架高的芯片(所述第二芯片)通过所述连接柱固装至所述基岛上,从而使得在所述封装料能够沿所述连接柱包饶并充盈至所述第二芯片和所述基岛之间的空隙中,避免现有技术中因两端回包而造成气体难以排出的情况发生,进而避免空洞现象,保证产品质量;另外,所述连接柱的上端植设于所述基底膜层且其下端焊接至所述基岛上,使得所述连接柱与所述第二芯片、所述基岛的连接稳固性强,避免所述连接柱脱落或移位,进一步保证产品质量。Compared with the prior art, the beneficial effect of the present invention is that: by setting the base film layer and planting a plurality of the connecting posts, the chip (the second chip) that needs to be elevated can be fixed through the connecting posts. mounted on the base island, so that the encapsulation material can cover and fill into the gap between the second chip and the base island along the connecting column, avoiding the two ends of the prior art Backpacking causes the gas to be difficult to discharge, thereby avoiding the void phenomenon and ensuring product quality; in addition, the upper end of the connecting column is planted on the base film layer and its lower end is welded to the base island, so that the The connections between the connection posts and the second chip and the base island are strong, which prevents the connection posts from falling off or shifting, and further ensures product quality.

附图说明Description of drawings

图1是现有技术中封装结构带局部透视效果的俯视图;Fig. 1 is a top view of a packaging structure with a partial perspective effect in the prior art;

图2是现有技术中封装结构的剖面示意图,其剖面沿图1中A-A所示;Fig. 2 is a schematic cross-sectional view of a package structure in the prior art, and its cross-section is shown along A-A in Fig. 1;

图3是本发明一实施方式的芯片封装结构带局部透视效果的俯视图;Fig. 3 is a top view of a chip package structure with a partial perspective effect according to an embodiment of the present invention;

图4a是本发明一实施方式的芯片封装结构的剖面示意图,其剖面沿图3中B-B所示;Fig. 4a is a schematic cross-sectional view of a chip package structure according to an embodiment of the present invention, and its cross-section is shown along B-B in Fig. 3;

图4b是图4a中C区域的放大图;Figure 4b is an enlarged view of area C in Figure 4a;

图5是本发明一实施方式的芯片封装结构的制造方法流程图;5 is a flowchart of a manufacturing method of a chip packaging structure according to an embodiment of the present invention;

图6是第二芯片的电信号功能面贴附保护膜的示意图;6 is a schematic diagram of attaching a protective film to the electrical signal functional surface of the second chip;

图7是对第二芯片的非电信号功能面进行研磨和清洗的示意图;Fig. 7 is a schematic diagram of grinding and cleaning the non-electric signal functional surface of the second chip;

图8是第二芯片的非电信号功能面成型出基底膜层的示意图;8 is a schematic diagram of forming a base film layer on the non-electrical signal functional surface of the second chip;

图9是基底膜层上涂覆感光干膜的示意图;Fig. 9 is a schematic diagram of coating a photosensitive dry film on the base film layer;

图10a是曝光显影后感光干膜实现图案化的示意图;Figure 10a is a schematic diagram of the patterning of the photosensitive dry film after exposure and development;

图10b是曝光显影后感光干膜实现图案化的俯视图;Figure 10b is a top view of patterning of the photosensitive dry film after exposure and development;

图11是植柱开口处植设连接柱的示意图;Fig. 11 is a schematic diagram of planting a connecting column at the opening of the planting column;

图12是剥离掉感光干膜的示意图;Figure 12 is a schematic diagram of peeling off the photosensitive dry film;

图13是第一芯片贴装至基岛上的示意图;Fig. 13 is a schematic diagram of attaching the first chip to the base island;

图14是第二芯片固装至基岛上的示意图;Fig. 14 is a schematic diagram of the second chip being mounted on the base island;

图15是在第一芯片、第二芯片、管脚之间连接引线的示意图;Fig. 15 is a schematic diagram of connecting leads between the first chip, the second chip, and pins;

图16是包封后形成的芯片封装结构的示意图;FIG. 16 is a schematic diagram of a chip package structure formed after encapsulation;

图17是本发明另一实施方式中晶圆切割为多个第二芯片的示意图。FIG. 17 is a schematic diagram of cutting a wafer into a plurality of second chips in another embodiment of the present invention.

具体实施方式Detailed ways

以下将结合附图所示的具体实施方式对本发明进行详细描述。但这些实施方式并不限制本发明,本领域的普通技术人员根据这些实施方式所做出的结构、方法、或功能上的变换均包含在本发明的保护范围内。The present invention will be described in detail below in conjunction with specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to these embodiments are included in the protection scope of the present invention.

需要说明的是,本文使用的表示空间方位的“上”、“上”等术语是基于图示位置关系,其出于便于说明的目的来描述如附图中所示的一个单元或特征相对于另一个单元或特征的关系;空间相对位置的术语可以旨在包括产品在使用或工作中除了图中所示方位以外的不同方位,例如,如果将图中的产品翻转,则被描述为位于其他单元或特征“下方”或“下侧”的单元将位于其他单元或特征“上方”。It should be noted that terms such as "upper" and "upper" used herein to indicate spatial orientation are based on the positional relationship in the diagram, which describes a unit or feature as shown in the drawings relative to Relationship to another unit or feature; terms of spatial relative position may be intended to cover different orientations of a product in use or operation than that shown in the drawings, for example, if a product in a drawing is turned over, it is described as being located in another A unit that is "below" or "below" a unit or feature will be located "above" another unit or feature.

参看图3、图4a以及图4b,本发明一实施方式提供的一种芯片封装结构100,其在附图中以两个芯片(第一芯片10和第二芯片20)的方式予以示意,但其芯片数目不限于此,可以设置为两个或两个以上的任意数目。并且,为便于说明,在图3中以第二芯片20透视效果予以示意。Referring to Fig. 3, Fig. 4a and Fig. 4b, a chip packaging structure 100 provided by an embodiment of the present invention is schematically shown in the form of two chips (first chip 10 and second chip 20) in the drawings, but The number of chips is not limited thereto, and can be set to any number of two or more. Moreover, for the convenience of description, the perspective effect of the second chip 20 is illustrated in FIG. 3 .

具体地,芯片封装结构100包括第一芯片10、第二芯片20、引线框架、若干条引线70以及封装料60。Specifically, the chip packaging structure 100 includes a first chip 10 , a second chip 20 , a lead frame, several leads 70 and a package material 60 .

所述引线框架包括基岛30和围绕于基岛30四周的若干管脚40。The lead frame includes a base island 30 and several pins 40 surrounding the base island 30 .

其中,基岛30对第一芯片10和第二芯片20起固定支撑作用。Wherein, the base island 30 plays a role of fixing and supporting the first chip 10 and the second chip 20 .

具体地,第一芯片10贴装于基岛30的上表面。本实施例中,第一芯片10通过装片胶80紧密粘贴固定在基岛30的上表面,一方面,装片胶80可使得第一芯片10与基岛30之间无组装接缝,另一方面,基岛11四周边缘处具有供装片胶80溢胶的区域。其中,装片胶80优选设置为银胶。Specifically, the first chip 10 is mounted on the upper surface of the base island 30 . In this embodiment, the first chip 10 is closely pasted and fixed on the upper surface of the base island 30 by the die-mounting adhesive 80. On the one hand, the die-mounting adhesive 80 can make there be no assembly seam between the first chip 10 and the base island 30. On the one hand, there is an area around the edge of the base island 11 for the overflow of the sheet glue 80 . Wherein, the mounting glue 80 is preferably set as silver glue.

第一芯片10的下表面为非电信号功能面,第一芯片10的下表面粘贴固定在基岛30的上表面。The lower surface of the first chip 10 is a non-electric signal function surface, and the lower surface of the first chip 10 is pasted and fixed on the upper surface of the base island 30 .

相对应的,第一芯片10的上表面为电信号功能面,也即第一芯片10的上表面可设置供电信号传输的铝垫/其他端子。第一芯片10的上表面焊接有引线70,从而使第一芯片10与其他部件(如第二芯片20、管脚40等)之间形成电信号传输电路。Correspondingly, the upper surface of the first chip 10 is an electrical signal function surface, that is, the upper surface of the first chip 10 may be provided with aluminum pads/other terminals for power supply signal transmission. Leads 70 are welded on the upper surface of the first chip 10 , so that an electrical signal transmission circuit is formed between the first chip 10 and other components (such as the second chip 20 , pins 40 , etc.).

第二芯片20也相对固定地连接至基岛30的上表面,其相较于第一芯片10远离基岛30的上表面布设。也即,第二芯片20和第一芯片10均位于基岛30的上方,且第二芯片20架高设置,第二芯片20的下表面与基岛30上表面之间的距离大于第一芯片10的下表面与基岛30上表面之间的距离。这样,在上下方向上,第二芯片20和第一芯片10的布设呈现层次性,从而避免如背景技术所提的碰线问题。The second chip 20 is also relatively fixedly connected to the upper surface of the base island 30 , which is farther away from the upper surface of the base island 30 than the first chip 10 . That is to say, both the second chip 20 and the first chip 10 are located above the base island 30, and the second chip 20 is elevated, and the distance between the lower surface of the second chip 20 and the upper surface of the base island 30 is greater than that of the first chip. The distance between the lower surface of 10 and the upper surface of base island 30. In this way, in the vertical direction, the layout of the second chip 20 and the first chip 10 is layered, thereby avoiding the problem of line collision as mentioned in the background art.

管脚40、第一芯片10、第二芯片20的至少其中两者之间通过引线70电性连接,从而形成芯片封装结构10所需的电信号传输电路。在本实施例中,管脚40、第一芯片10、第二芯片20的任意两者之间均通过引线70电性连接。At least two of the pins 40 , the first chip 10 , and the second chip 20 are electrically connected by wires 70 , so as to form an electrical signal transmission circuit required by the chip package structure 10 . In this embodiment, any two of the pins 40 , the first chip 10 , and the second chip 20 are electrically connected by wires 70 .

具体地,管脚40的上表面具有导电膜层41,引线70焊连至导电膜层41,以使管脚40与第一芯片10、管脚40与第二芯片20实现电性连接。优选在本实施例中,导电膜层41设置为镀银膜层,当然不限于此。Specifically, the upper surface of the pin 40 has a conductive film layer 41 , and the wire 70 is soldered to the conductive film layer 41 to electrically connect the pin 40 to the first chip 10 and the pin 40 to the second chip 20 . Preferably, in this embodiment, the conductive film layer 41 is set as a silver-plated film layer, but of course it is not limited thereto.

封装料60用于包封第一芯片10、第二芯片20以及引线70,以对第一芯片10、第二芯片20以及引线70进行保护。优选地,封装料60还包覆所述引线框架的全部上方区域,其下端面与所述引线框架的下表面齐平,以使得封装料60包封第一芯片10、第二芯片20以及引线70,且同时覆盖基岛30的上表面和管脚30的上表面,基岛30的下表面和管脚30的下表面暴露在封装料60之外。The packaging material 60 is used to encapsulate the first chip 10 , the second chip 20 and the leads 70 to protect the first chip 10 , the second chip 20 and the leads 70 . Preferably, the encapsulant 60 also covers the entire upper area of the lead frame, and its lower end surface is flush with the lower surface of the lead frame, so that the encapsulant 60 encapsulates the first chip 10, the second chip 20 and the leads. 70 , and cover the upper surface of the base island 30 and the upper surface of the pin 30 at the same time, and the lower surface of the base island 30 and the lower surface of the pin 30 are exposed outside the packaging compound 60 .

在本发明中,芯片封装结构100还包括基底膜层52以及连接柱51。In the present invention, the chip packaging structure 100 further includes a base film layer 52 and a connecting post 51 .

基底膜层52设于第二芯片20的下表面,其与第二芯片20的下表面稳固连接。在具体实施时,基底膜层52可以布设于第二芯片20的下表面的全部区域,也可以根据需要布设于第二芯片20的下表面的局部区域,这些实施方式均未脱离本发明的技艺宗旨。The base film layer 52 is disposed on the lower surface of the second chip 20 and is firmly connected to the lower surface of the second chip 20 . In a specific implementation, the base film layer 52 can be arranged on the entire area of the lower surface of the second chip 20, and can also be arranged on a local area of the lower surface of the second chip 20 as required, and none of these embodiments deviates from the technical aspects of the present invention. purpose.

连接柱51的数目设置为多个,其具体可以为3个或3个以上的任意数目,在附图中示例为9个,但不限于此;并且,后文结合附图的描述中,任意两个连接柱51以大致相同的结构予以示例,但不限于此,在不影响实施效果的情况下,其中部分或全部连接柱51可以设置为彼此结构不同。The number of connecting columns 51 is set to multiple, which can be any number of 3 or more, and is illustrated as 9 in the accompanying drawings, but is not limited thereto; and, in the following description in conjunction with the accompanying drawings, any The two connecting posts 51 are exemplified with substantially the same structure, but not limited thereto, and some or all of the connecting posts 51 may be configured to have different structures from each other, provided that the implementation effect is not affected.

连接柱51的上端植设于基底膜层52,连接强度大,结构稳定不易脱落/断裂,具体可采用电镀、蒸镀、溅镀、沉积等工艺植设于基底膜层52;连接柱51的下端焊接至基岛30的上表面,也即,连接柱51下端和基岛30的上表面通过焊接方式进行固定连接,同样连接强度大,结构稳定不易脱落/断裂。The upper end of the connecting column 51 is planted on the base film layer 52, the connection strength is high, and the structure is stable and not easy to fall off/break. The lower end is welded to the upper surface of the base island 30, that is, the lower end of the connecting column 51 and the upper surface of the base island 30 are fixedly connected by welding, and the connection strength is also high, and the structure is stable and not easy to fall off/break.

这样,通过设置基底膜层52以及植设多个连接柱51,使第二芯片20在架高的同时通过连接柱51固装至基岛30上,进而封装料60可包饶在连接柱51周围,并能够充盈至第二芯片20和基岛30之间的空隙S0中,利于空隙S0中的气体在包封过程中顺利排出,避免空洞现象的发生,保证产品质量;另外,连接柱51与第二芯片20、基岛30可稳固连接,避免连接柱51发生脱落或移位,进一步保证产品质量。In this way, by setting the base film layer 52 and planting a plurality of connecting pillars 51, the second chip 20 can be fixed to the base island 30 through the connecting pillars 51 while elevating, and then the packaging material 60 can be wrapped in the connecting pillars 51. surrounding, and can be filled into the gap S0 between the second chip 20 and the base island 30, which is beneficial to the smooth discharge of the gas in the gap S0 during the encapsulation process, avoiding the occurrence of voids, and ensuring product quality; in addition, the connecting column 51 It can be stably connected with the second chip 20 and the base island 30 to avoid falling off or displacement of the connecting column 51 and further ensure product quality.

优选地,在本发明一实施方式中,任意两个连接柱51彼此分离不相接触,以使得第二芯片20和基岛30之间的空隙S0全部区域相连通成一体,这样可进一步保证在包封工序中,封装料60能够有效填满第二芯片20和基岛30之间的空隙S0,避免因气体无法排出而造成的空洞问题。Preferably, in one embodiment of the present invention, any two connecting posts 51 are separated from each other and do not contact each other, so that the entire area of the gap S0 between the second chip 20 and the base island 30 is connected and integrated, which can further ensure that the During the encapsulation process, the encapsulation material 60 can effectively fill the gap S0 between the second chip 20 and the base island 30 , avoiding the cavity problem caused by the inability to discharge the gas.

进一步地,第二芯片20的上表面为电信号功能面,也即第二芯片20的上表面可设置供电信号传输的铝垫/其他端子。第二芯片20的上表面焊接有引线70,从而使第二芯片20与其他部件(如第一芯片10、管脚40等)之间形成电信号传输电路。Further, the upper surface of the second chip 20 is an electrical signal function surface, that is, the upper surface of the second chip 20 may be provided with aluminum pads/other terminals for power supply signal transmission. Leads 70 are welded on the upper surface of the second chip 20 , so that an electrical signal transmission circuit is formed between the second chip 20 and other components (such as the first chip 10 , pins 40 , etc.).

相对应的,第二芯片20的下表面为非电信号功能面,第二芯片20的下表面通过溅镀工艺形成基底膜层52,换句话说,在本实施例中,基底膜层52设为溅镀金属薄膜,具体可为溅镀铜薄膜。Correspondingly, the lower surface of the second chip 20 is a non-electrical signal function surface, and the lower surface of the second chip 20 forms the base film layer 52 through a sputtering process. In other words, in this embodiment, the base film layer 52 is set For sputtering a metal film, specifically, it can be sputtering a copper film.

进一步地,连接柱51包括金属柱511和凸点512。Further, the connection post 51 includes a metal post 511 and a bump 512 .

其中,金属柱511起到支撑固定的作用,其构成连接柱51的上端,具体可采用电镀、蒸镀、溅镀、沉积等工艺植设于基底膜层52上;在本实施例中,金属柱511可设置为铜柱。Among them, the metal post 511 plays the role of support and fixation, which constitutes the upper end of the connecting post 51, and can be planted on the base film layer 52 by electroplating, evaporation, sputtering, deposition and other processes; in this embodiment, the metal The post 511 may be configured as a copper post.

凸点512植于金属柱511的下端,其构成连接柱51的下端,连接柱51通过凸点512焊接于基岛30的上表面;在本实施例中,凸点512设置为锡球。The bump 512 is planted on the lower end of the metal pillar 511, which constitutes the lower end of the connecting pillar 51, and the connecting pillar 51 is soldered to the upper surface of the base island 30 through the bump 512; in this embodiment, the bump 512 is set as a solder ball.

进一步地,第二芯片20的下表面与基岛30上表面之间的距离不小于第一芯片10的上表面与基岛30上表面之间的距离。换句话说,第二芯片20位于第一芯片10的上方,第二芯片20的一部分与第一芯片10的一部分上下重叠且二者之间填充有装片胶80(如银胶),以使第二芯片20和第一芯片10彼此固定组装且避免组装缝隙的产生。Further, the distance between the lower surface of the second chip 20 and the upper surface of the base island 30 is not smaller than the distance between the upper surface of the first chip 10 and the upper surface of the base island 30 . In other words, the second chip 20 is located above the first chip 10, a part of the second chip 20 overlaps with a part of the first chip 10 up and down and a chip mounting glue 80 (such as silver glue) is filled between the two, so that The second chip 20 and the first chip 10 are fixedly assembled to each other and avoid assembly gaps.

进一步地,本发明一实施方式还提供了一种芯片封装结构的制造方法,其可用于生成制造前述的芯片封装结构100,当然,在变化的实施情况下,采用所述制造方法所制得的芯片封装结构产品可以不仅仅限于前述芯片封装结构100。下面,参附图5,所述制造方法包括以下步骤:Further, an embodiment of the present invention also provides a method for manufacturing a chip package structure, which can be used to generate and manufacture the aforementioned chip package structure 100. Of course, in a variable implementation situation, the manufactured The chip package structure product may not be limited to the aforementioned chip package structure 100 . Below, with reference to accompanying drawing 5, described manufacturing method comprises the following steps:

在第二芯片的第一表面成型出基底膜层;forming a base film layer on the first surface of the second chip;

在所述基底膜层上植设多个连接柱;planting a plurality of connection posts on the basement membrane layer;

将第一芯片贴装于基岛的上表面;mounting the first chip on the upper surface of the base island;

将所述连接柱焊接至所述基岛的上表面,以使所述第二芯片固装至所述基岛;welding the connection post to the upper surface of the base island, so that the second chip is fixed to the base island;

利用封装料进行包封,以制得芯片封装结构。Encapsulating with an encapsulating material to obtain a chip encapsulating structure.

这样,通过设置所述基底膜层和植设多个所述连接柱,使需要架高的芯片(所述第二芯片)通过所述连接柱固装至所述基岛上,从而使得在所述封装料能够沿所述连接柱包饶并充盈至所述第二芯片和所述基岛之间的空隙中,使包封工序中所述连接柱周围的空隙中的气体能够顺利排出,进而避免空洞现象,保证产品质量;另外,所述连接柱的上端植设于所述基底膜层且其下端焊接至所述基岛上,使得所述连接柱与所述第二芯片、所述基岛的连接稳固性强,避免所述连接柱脱落或移位,进一步保证产品质量。In this way, by setting the base film layer and planting a plurality of the connection posts, the chip (the second chip) that needs to be elevated is fixed on the base island through the connection posts, so that the The encapsulation compound can cover and fill into the gap between the second chip and the base island along the connecting post, so that the gas in the space around the connecting post can be discharged smoothly during the encapsulation process, and then Avoid voids and ensure product quality; in addition, the upper end of the connecting post is planted on the base film layer and its lower end is welded to the base island, so that the connecting post is connected to the second chip, the base The connection stability of the island is strong, which prevents the connection column from falling off or shifting, and further ensures the product quality.

需要说明的是,所述制造方法中,除非存在必要的依附关系,各步骤之间的实施顺序不限定于上述语序顺序:例如,步骤“将第一芯片贴装于基岛的上表面”虽然在描述语序上在步骤“在第二芯片的第一表面成型出基底膜层”之后,但步骤“将第一芯片贴装于基岛的上表面”不限定于必须晚于步骤“在第二芯片的第一表面成型出基底膜层”实施。It should be noted that, in the manufacturing method, unless there is a necessary dependency relationship, the execution order of the steps is not limited to the above word order: for example, the step "attach the first chip on the upper surface of the base island" although In the descriptive sequence, it is after the step "form the base film layer on the first surface of the second chip", but the step "attach the first chip on the upper surface of the base island" is not limited to be later than the step "on the second Forming a base film layer on the first surface of the chip" is implemented.

下面,以芯片封装结构100为例,结合附图6至图16所示实施例,对所述制造方法的各个步骤进行介绍。Next, taking the chip packaging structure 100 as an example, the various steps of the manufacturing method will be introduced in combination with the embodiments shown in FIGS. 6 to 16 .

步骤(1),在第二芯片20的第一表面201成型出基底膜层52。Step (1), forming a base film layer 52 on the first surface 201 of the second chip 20 .

关于步骤(1),第二芯片20包括相对设置的第一表面201和第二表面,第一表面201对应于芯片封装结构100中第二芯片201的下表面,优选为第二芯片20的非电信号功能面;相对应的,第二芯片20的所述第二表面对应于芯片封装结构100中第二芯片201的上表面,优选为第二芯片20的电信号功能面,也即所述第二表面可设置供电信号传输的铝垫/其他端子,以供与引线70焊连。Regarding step (1), the second chip 20 includes a first surface 201 and a second surface oppositely arranged, and the first surface 201 corresponds to the lower surface of the second chip 201 in the chip packaging structure 100, preferably the non-surface of the second chip 20. Electrical signal functional surface; correspondingly, the second surface of the second chip 20 corresponds to the upper surface of the second chip 201 in the chip packaging structure 100, preferably the electrical signal functional surface of the second chip 20, that is, the Aluminum pads/other terminals for power supply signal transmission can be provided on the second surface for welding with the leads 70 .

具体地,步骤(1)包括以下子步骤:Specifically, step (1) includes the following sub-steps:

子步骤S1,贴膜Sub-step S1, film

参图6,在第二芯片20的所述第二表面贴附保护膜1,这样,可以利用保护膜1对所述第二表面进行保护,以避免暴露于所述第二表面的铝垫、端子等电信号功能件在后续步骤操作中受到损伤。Referring to Fig. 6, a protective film 1 is pasted on the second surface of the second chip 20, so that the second surface can be protected by the protective film 1, so as to avoid aluminum pads, Electrical signal functional parts such as terminals are damaged in subsequent steps.

子步骤S2,表面清理Sub-step S2, surface cleaning

参图7,贴附保护膜1之后,一方面,研磨第二芯片20的第一表面201,以使第一平面201平整化和达到需要的芯片厚度,另一方面,采用超声波清洗第二芯片20的第一表面201,以去除第一表面201的杂质和异物,这样,可从而为后续在第一表面201成型出基底膜层52做好准备,保证基底膜层52的成型效果和稳定性;其中优选地超声波清洗可在研磨完成后再实施,以便于把研磨时的残留物清洗干净。Referring to Fig. 7, after attaching the protective film 1, on the one hand, the first surface 201 of the second chip 20 is ground to make the first plane 201 flat and reach the required chip thickness; on the other hand, the second chip is cleaned by ultrasonic waves. 20 on the first surface 201 of the first surface 20 to remove impurities and foreign matter on the first surface 201, so that it can be prepared for the subsequent formation of the base film layer 52 on the first surface 201 to ensure the molding effect and stability of the base film layer 52 ; Among them, preferably ultrasonic cleaning can be implemented after the grinding is completed, so as to clean the residue during grinding.

子步骤S3,镀膜Sub-step S3, coating

参图8,完成对第二芯片20的第一表面201的表面清理后,在第一表面201镀设出基底膜层52,通过镀设出的基底膜层52可以稳定地连接第二芯片20的第一表面201,其作为后续植柱的基底,可增加连接结构强度。Referring to FIG. 8 , after the surface cleaning of the first surface 201 of the second chip 20 is completed, a base film layer 52 is plated on the first surface 201, and the second chip 20 can be stably connected to the plated base film layer 52. The first surface 201 is used as the base of the subsequent column planting, which can increase the strength of the connection structure.

优选地,基底膜层52可采用溅镀方式成型于第一表面201,具体过程为:在高真空的状态中充入氩气,在强电场作用下将氩气电离以产生氩正离子,并加速形成高能量的离子流轰击在靶材表面,使靶材原子脱离表面溅射(沉积)到第二芯片20的第一表面201,以形成基底膜层52。Preferably, the base film layer 52 can be formed on the first surface 201 by sputtering, the specific process is: filling argon gas in a high vacuum state, ionizing the argon gas under the action of a strong electric field to generate positive argon ions, and Accelerated and formed high-energy ion flow bombards the surface of the target, so that the target atoms are detached from the surface and sputtered (deposited) onto the first surface 201 of the second chip 20 to form the base film layer 52 .

进一步优选地,基底膜层52为溅镀金属薄膜,尤其是溅镀铜薄膜。Further preferably, the base film layer 52 is a sputtered metal film, especially a sputtered copper film.

另外,优选如本实施例中,基底膜层52布设于第二芯片20的第一表面201的几乎全部区域,当然在变化实施例中,基底膜层52还可以按需布设于第二芯片20的第一表面201的局部区域。In addition, preferably, as in this embodiment, the base film layer 52 is arranged on almost the entire area of the first surface 201 of the second chip 20. Of course, in a variant embodiment, the base film layer 52 can also be arranged on the second chip 20 as required. A local area of the first surface 201 .

步骤(2),在基底膜层52上植设多个连接柱51。Step (2), planting a plurality of connection pillars 51 on the basement membrane layer 52 .

关于步骤(2),连接柱51的数目设置为多个,其具体可以为3个或3个以上的任意数目,在附图中示例为9个,但不限于此;并且,后文结合附图的描述中,任意两个连接柱51以大致相同的结构予以示例,但不限于此,在不影响实施效果的情况下,其中部分或全部连接柱51可以设置为彼此结构不同。Regarding step (2), the number of connecting columns 51 is set to be multiple, and it can be specifically any number of 3 or more than 3, exemplified as 9 in the accompanying drawings, but not limited thereto; and, hereinafter in conjunction with the attached In the description of the figure, any two connecting columns 51 are exemplified with approximately the same structure, but not limited thereto, and some or all of the connecting columns 51 may be configured to have different structures from each other without affecting the implementation effect.

具体地,步骤(2)包括以下子步骤:Specifically, step (2) includes the following sub-steps:

子步骤S4,盖干膜Sub-step S4, cover dry film

参图9,在基底膜层52上设置感光干膜2,感光干膜2具体可采用涂覆工艺形成于基底膜层52上;可以理解的,感光干膜2位于基底膜层52背离第二芯片20的一侧,也即,基底膜层52位于感光干膜2和第二芯片20之间。9, a photosensitive dry film 2 is provided on the base film layer 52, and the photosensitive dry film 2 can be formed on the base film layer 52 by a coating process; it can be understood that the photosensitive dry film 2 is located on the base film layer 52 away from the second One side of the chip 20 , that is, the base film layer 52 is located between the photosensitive dry film 2 and the second chip 20 .

优选地,感光干膜2完全覆盖整个基底膜层52。Preferably, the photosensitive dry film 2 completely covers the entire base film layer 52 .

子步骤S5,图案化Sub-step S5, patterning

参图10a和图10b,对感光干膜2进行分区曝光显影,使感光干膜2图案化出暴露基底膜层52的多个植柱开口T;也即,通过分区曝光显影技术,使感光干膜2图案化,图案化后的感光干膜2具有多个植柱开口T,植柱开口T暴露出基底膜层52,而除植柱开口T之外的剩余感光干膜2依旧覆盖并遮蔽基底膜层52。Referring to Fig. 10a and Fig. 10b, the photosensitive dry film 2 is subjected to partition exposure and development, so that the photosensitive dry film 2 is patterned to form a plurality of pillar openings T exposing the base film layer 52; that is, through the partition exposure and development technology, the photosensitive dry film The film 2 is patterned, and the patterned photosensitive dry film 2 has a plurality of stud-planted openings T, and the stud-planted openings T expose the base film layer 52, while the remaining photosensitive dry film 2 except the stud-planted openings T still covers and shields Basement membrane layer 52 .

具体地,图案化的详细过程可以为:在光刻板上刻画图形,将所述光刻板置于感光干膜2的一侧,所述光刻板可遮挡感光干膜2的部分区域并暴露感光干膜2的其余部分区域(即需要形成出植柱开口T的区域);通过高强度光线曝光,然后经过显影,以使感光干膜2被暴露在光线下的部分区域(即需要形成出植柱开口T的区域)去除,从而实现感光干膜2图案化。Specifically, the detailed process of patterning can be as follows: drawing a figure on a photoresist plate, placing the photoresist plate on one side of the photosensitive dry film 2, the photoreticle can block a part of the photosensitive dry film 2 and expose the photosensitive dry film 2. The remaining area of the film 2 (that is, the area where the pillar opening T needs to be formed); it is exposed to high-intensity light, and then developed, so that the photosensitive dry film 2 is exposed to the light. The area of the opening T) is removed, so as to realize the patterning of the photosensitive dry film 2 .

子步骤S6,植柱Sub-step S6, planting pillars

参图11,在植柱开口T处先后植设金属柱511和凸点512。其中,具体可在植柱开口T处先通过电镀、蒸镀、溅镀、沉积等工艺植设金属柱511,该金属柱511优选为铜柱;之后,再在金属柱511的末端(对应于芯片封装结构100中金属柱511的下端)植设凸点512,凸点512优选为锡球。Referring to FIG. 11 , metal pillars 511 and bumps 512 are successively planted at the opening T of the pillar planting. Specifically, the metal post 511 can be first planted at the opening T of the post by electroplating, vapor deposition, sputtering, deposition, etc., and the metal post 511 is preferably a copper post; after that, at the end of the metal post 511 (corresponding to The lower end of the metal post 511 in the chip packaging structure 100 is implanted with bumps 512, and the bumps 512 are preferably solder balls.

可以理解的,在进行金属柱511的植设之前,可先对植柱开口T处进行清洁,以去除后表面氧化物和残留物,使暴露于植柱开口T处的基底膜层52表面洁净,从而满足后续植柱要求,保证金属柱511与基底膜层52的连接强度。It can be understood that before the metal post 511 is planted, the opening T of the post planting can be cleaned to remove oxides and residues on the rear surface, so that the surface of the base film layer 52 exposed at the opening T of the post planting can be cleaned. , so as to meet the requirements of subsequent pillar planting and ensure the connection strength between the metal pillar 511 and the base film layer 52 .

子步骤S7,去干膜Sub-step S7, remove dry film

参图12,在植柱完成后,将附在基底膜层52上的感光干膜2去除,具体可采用机械剥离或清洁等方式去除。Referring to FIG. 12 , after the pillar planting is completed, the photosensitive dry film 2 attached to the base film layer 52 is removed, specifically by mechanical peeling or cleaning.

经过上述步骤(1)和步骤(2)之后,即可得到携载有基底膜层52、连接柱51以及保护膜1的第二芯片20,以备后用,具体在去除保护膜1后即可应用于后续的制造方法步骤中。After the above step (1) and step (2), the second chip 20 carrying the base film layer 52, the connection post 51 and the protective film 1 can be obtained for later use, specifically after the protective film 1 is removed. It can be applied in subsequent manufacturing method steps.

步骤(3),采用装片胶80将第一芯片10贴装于基岛30的上表面301。In step (3), attach the first chip 10 to the upper surface 301 of the base island 30 by using the die-mount adhesive 80 .

参图13,可结合图3,具体在基岛30的上表面301中心位置处喷洒或涂抹装片胶80,装片胶80具体可为银胶,之后第一芯片10压紧在装片胶80处以贴装至基岛30的上表面301,在压紧过程中,装片胶80会填满第一芯片10的下表面和基岛30的上表面301之间,以避免组装缝隙的产生。Referring to FIG. 13 , in combination with FIG. 3 , spray or smear a mounting glue 80 at the center of the upper surface 301 of the base island 30. Specifically, the mounting glue 80 can be silver glue, and then the first chip 10 is pressed against the mounting glue. 80 to be mounted on the upper surface 301 of the base island 30, during the pressing process, the die-mounting adhesive 80 will fill up between the lower surface of the first chip 10 and the upper surface 301 of the base island 30, so as to avoid assembly gaps .

其中,第一芯片10的下表面为非电信号功能面,其粘贴固定在基岛30的上表面并被装片胶80所覆盖。相对应的,第一芯片10的上表面为电信号功能面,也即第一芯片10的上表面可设置供电信号传输的铝垫/其他端子,以供与引线70焊连。Wherein, the lower surface of the first chip 10 is a non-electric signal functional surface, which is pasted and fixed on the upper surface of the base island 30 and covered by the mounting adhesive 80 . Correspondingly, the upper surface of the first chip 10 is an electrical signal functional surface, that is, the upper surface of the first chip 10 can be provided with aluminum pads/other terminals for power supply signal transmission, for soldering with the leads 70 .

进一步地,在该步骤(3)中,还可以在第一芯片10的上表面101的局部区域涂覆装片胶80,以备接下来辅助固定第二芯片20以及避免组装缝隙的产生(参后文)。Further, in this step (3), the mounting adhesive 80 can also be coated on a local area of the upper surface 101 of the first chip 10, in order to assist in fixing the second chip 20 and avoid the generation of assembly gaps (see epilogue).

步骤(4),将连接柱51焊接至基岛30的上表面301,以使第二芯片20固装至基岛30。In step (4), solder the connecting post 51 to the upper surface 301 of the base island 30 so that the second chip 20 is fixed to the base island 30 .

参图14,具体地,将前述经步骤(1)和步骤(2)处理好的第二芯片20(也即携载基底膜层52和连接柱51的第二芯片20),从保护膜1上剥离,并扣贴至基岛30上方;也即,以连接柱51在下第二芯片20在上的方式的配置于基岛30上方。Referring to Fig. 14, specifically, the aforementioned second chip 20 processed by step (1) and step (2) (that is, the second chip 20 carrying the base film layer 52 and the connecting post 51) is removed from the protective film 1 The upper part is peeled off, and then snapped onto the base island 30 ; that is, it is arranged on the base island 30 in such a way that the connection post 51 is on the lower second chip 20 .

第二芯片20的一部分重叠贴合至第一芯片10的上表面101的装片胶80处,在具体实施中,第二芯片20与第一芯片10上下重叠的位置之间充满装片胶80,以稳固第二芯片20的安装位置,并避免组装缝隙;并且,连接柱51的下端焊接至基岛30的上表面301,具体是连接柱51的凸点512焊接至基岛30,这样通过焊接连接,可保证连接柱51位置稳定。A part of the second chip 20 is overlapped and attached to the mounting glue 80 on the upper surface 101 of the first chip 10. In a specific implementation, the position where the second chip 20 and the first chip 10 overlap up and down is filled with the mounting glue 80. , to stabilize the mounting position of the second chip 20, and avoid assembly gaps; and, the lower end of the connecting post 51 is welded to the upper surface 301 of the base island 30, specifically, the bump 512 of the connecting post 51 is welded to the base island 30, thus passing The welding connection can ensure the stable position of the connecting column 51 .

可以理解的,通过连接柱51,使得第二芯片20相较于第一芯片20架高设置,第二芯片20的下表面与基岛30的上表面301之间的距离大于第一芯片10的下表面与基岛30的上表面301之间的距离,并且第二芯片20和基岛30之间形成有围绕于连接柱51四周的空隙S0。It can be understood that the second chip 20 is set higher than the first chip 20 through the connecting posts 51, and the distance between the lower surface of the second chip 20 and the upper surface 301 of the base island 30 is greater than that of the first chip 10. The distance between the lower surface and the upper surface 301 of the base island 30 , and a gap S0 around the connection pillar 51 is formed between the second chip 20 and the base island 30 .

步骤(5),将第一芯片10、第二芯片20、管脚40的其中至少两个之间通过引线70建立电性连接。In step (5), at least two of the first chip 10 , the second chip 20 , and the pins 40 are electrically connected through wires 70 .

参图15,在本实施例中,管脚40的上表面具有导电膜层41,通过焊连引线70,使得管脚40与第一芯片10、管脚40与第二芯片20、第一芯片10和第二芯片20之间均实现电性连接。优选在本实施例中,导电膜层41设置为镀银膜层,当然不限于此。Referring to Fig. 15, in this embodiment, the upper surface of the pin 40 has a conductive film layer 41, and the lead wire 70 is connected by welding, so that the pin 40 and the first chip 10, the pin 40 and the second chip 20, and the first chip 10 and the second chip 20 are electrically connected. Preferably, in this embodiment, the conductive film layer 41 is set as a silver-plated film layer, but of course it is not limited thereto.

步骤(6),利用封装料60进行包封,以制得芯片封装结构100。Step (6), encapsulating with the encapsulation compound 60 to obtain the chip encapsulation structure 100 .

其中,基岛30和管脚40构成引线框架的至少部分;参图16,利用封装料60覆盖所述引线框架的全部上方区域,封装料60的下端面与所述引线框架的下表面齐平,如图示例中封装料60下端面与基岛30的下表面齐平,以使得封装料60在包封第一芯片10、第二芯片20以及引线70,并同时覆盖基岛30的上表面301和管脚30的上表面,基岛30的下表面和管脚30的下表面暴露在封装料60之外。Wherein, the base island 30 and the pins 40 constitute at least part of the lead frame; referring to FIG. 16 , the entire upper area of the lead frame is covered by the encapsulation compound 60, and the lower end surface of the encapsulation compound 60 is flush with the lower surface of the lead frame. In the example shown in the figure, the lower end surface of the encapsulation material 60 is flush with the lower surface of the base island 30, so that the encapsulation material 60 encapsulates the first chip 10, the second chip 20 and the leads 70, and simultaneously covers the upper surface of the base island 30 301 and the upper surface of the pin 30 , the lower surface of the base island 30 and the lower surface of the pin 30 are exposed outside the encapsulation compound 60 .

这样,即可制得芯片封装结构100,由此可得,通过在第二芯片20的下表面设置基底膜层52以及植设多个连接柱51,使第二芯片20在架高的同时通过连接柱51固装至基岛30上,在其制造过程的包封工序中,使得在封装料60包饶在连接柱51周围,并且能够充盈至第二芯片20和基岛30之间的空隙S0中,利于空隙S0中的气体在包封过程中顺利排出,避免空洞现象的发生,保证产品质量;另外,连接柱52与第二芯片20、基岛30可稳固连接,避免连接柱30发生脱落或移位,进一步,保证产品质量。In this way, the chip packaging structure 100 can be obtained, and it can be obtained that by setting the base film layer 52 on the lower surface of the second chip 20 and planting a plurality of connecting posts 51, the second chip 20 can pass through while being elevated. The connection post 51 is fixed on the base island 30, and in the encapsulation process of its manufacturing process, the encapsulation material 60 is wrapped around the connection post 51 and can be filled to the gap between the second chip 20 and the base island 30 In S0, it is beneficial for the gas in the gap S0 to be discharged smoothly during the encapsulation process, avoiding the occurrence of voids, and ensuring product quality; in addition, the connection post 52 can be firmly connected with the second chip 20 and the base island 30, avoiding the occurrence of the connection post 30 Falling off or shifting, further, guarantees product quality.

进一步优选地,任意两个连接柱51彼此分离不相接触,以使得第二芯片20和基岛30之间的空隙S0全部区域相连通成一体,这样可进一步保证在包封工序中,封装料60能够有效填满第二芯片20和基岛30之间的空隙S0,避免因气体无法排出而造成的空洞问题。Further preferably, any two connection posts 51 are separated from each other and do not contact each other, so that the entire area of the gap S0 between the second chip 20 and the base island 30 is connected and integrated, which can further ensure that the encapsulation material 60 can effectively fill the gap S0 between the second chip 20 and the base island 30 , avoiding the cavity problem caused by the inability to discharge the gas.

需要再次重申的是,在本申请中,除非存在必要的依附关系,所述制造方法的各步骤之间的实施顺序不限定于上述语序顺序,并且本文中为了便于描述而对步骤进行的如“S1”、“S2”“(1)”、“(2)”等编号也并不意指各步骤的实施顺序,所述制造方法可以以合理可行的顺序对各步骤予以实施。例如,步骤(1)虽然在语序顺序上位于步骤(3)之前,并不限定于步骤(1)优先于步骤(3)予以实施;再例如,步骤(2)虽然在编号上位于步骤(1)、步骤(3)之间,并不限定于按照步骤(1)、步骤(2)、步骤(3)的顺序予以实施。It needs to be reiterated that in this application, unless there is a necessary dependency relationship, the implementation order of the steps of the manufacturing method is not limited to the above word order, and the steps are described herein as " Numbers such as S1", "S2", "(1)", and "(2)" do not imply the implementation order of each step, and the manufacturing method can implement each step in a reasonable and feasible order. For example, although step (1) is located before step (3) in word order, it is not limited to the implementation of step (1) prior to step (3); for another example, although step (2) is located in step (1) in numbering ), step (3), and are not limited to be implemented in the order of step (1), step (2), and step (3).

另外,在图6至图12所示的实施例中,步骤(1)以及步骤(2)中以单个第二芯片20的方式予以示例。当然,在变化实施例中,步骤(1)以及步骤(2),还优选地以多个第二芯片20集成于同一晶圆整体同步批量进行的方式予以实施,也即同一晶圆包括多个第二芯片20,同时对该多个第二芯片20同步进行步骤(1)和/或步骤(2)的操作,这样可以提高生产效率;相对应的,参图17所示,在步骤(1)以及步骤(2)实施完成后,在步骤(4)之前,可以将所述晶圆切割为携载有基底膜层52和多个连接柱51的多个第二芯片20,也即,将多个第二芯片20自所述晶圆上切割分离开,以便于步骤(4)中第二芯片20与基岛30进行组装。In addition, in the embodiments shown in FIG. 6 to FIG. 12 , step (1) and step (2) are illustrated in the form of a single second chip 20 . Of course, in the variant embodiment, step (1) and step (2) are also preferably implemented in a way that multiple second chips 20 are integrated on the same wafer and carried out in batches simultaneously, that is, the same wafer includes multiple The second chip 20, simultaneously carry out the operation of step (1) and/or step (2) to this plurality of second chips 20 synchronously, can improve production efficiency like this; Correspondingly, with reference to shown in Figure 17, in step (1 ) and step (2) are implemented, before step (4), the wafer can be cut into a plurality of second chips 20 carrying a base film layer 52 and a plurality of connecting posts 51, that is, the A plurality of second chips 20 are cut and separated from the wafer, so as to facilitate the assembly of the second chips 20 and the base island 30 in step (4).

应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施方式中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。It should be understood that although this description is described according to implementation modes, not each implementation mode only contains an independent technical solution, and this description in the description is only for clarity, and those skilled in the art should take the description as a whole, and each The technical solutions in the embodiments can also be properly combined to form other embodiments that can be understood by those skilled in the art.

上文所列出的一系列的详细说明仅仅是针对本发明的可行性实施方式的具体说明,它们并非用以限制本发明的保护范围,凡未脱离本发明技艺精神所作的等效实施方式或变更均应包含在本发明的保护范围之内。The series of detailed descriptions listed above are only specific descriptions for feasible implementations of the present invention, and they are not intended to limit the protection scope of the present invention. Any equivalent implementation or implementation that does not depart from the technical spirit of the present invention All changes should be included within the protection scope of the present invention.

Claims (7)

1. A chip packaging structure comprises a base island, packaging materials, a first chip and a second chip, wherein the first chip is attached to the upper surface of the base island, the second chip is arranged far away from the upper surface of the base island compared with the first chip; the connecting columns comprise metal copper columns and tin ball bumps implanted at the lower ends of the metal copper columns, and any two connecting columns are separated from each other and are not in contact with each other; the upper end of the connecting column is planted in the base film layer, the lower end of the connecting column is welded to the upper surface of the base island through the convex spot, and the packaging material encapsulates the first chip and the second chip and is filled between the base island and the second chip.
2. The chip package structure according to claim 1, wherein the upper surface of the second chip is an electrical signal functional surface; the upper surface of the first chip is an electrical signal functional surface;
the packaging structure further comprises a pin, and electrical connection is established among any two of the second chip, the pin and the first chip through a lead;
the encapsulant also encapsulates the leads and covers the upper surfaces of the pins.
3. The chip package structure according to claim 1, wherein the first chip is mounted on the upper surface of the base island by a die attach adhesive;
and a part of the second chip and a part of the first chip are arranged in an up-and-down overlapping manner, and a mounting adhesive is filled between the second chip and the first chip.
4. A method for manufacturing a chip package structure includes:
forming a base film layer on the first surface of the second chip, wherein the base film layer is set as a sputtering metal film;
sequentially planting a metal copper column and a tin ball bump on the substrate film layer to obtain a plurality of connecting columns, wherein any two connecting columns are separated from each other and are not in contact with each other;
attaching a first chip to the upper surface of the base island;
welding the connecting column to the upper surface of the base island through the bump to fixedly mount the second chip to the base island;
and encapsulating by using an encapsulating material to obtain the chip encapsulating structure.
5. The method for manufacturing the chip package structure according to claim 4, wherein the step of forming the substrate film layer on the first surface of the second chip comprises:
attaching a protective film to a second surface of a second chip, wherein the second surface is opposite to the first surface and is an electrical signal functional surface of the second chip;
grinding and ultrasonically cleaning the first surface of the second chip;
and sputtering and forming a base film layer on the first surface of the second chip.
6. The method for manufacturing a chip package structure according to claim 4, wherein the step of implanting a copper pillar and a solder bump on the substrate film in sequence to obtain a plurality of connection posts comprises:
laying a photosensitive dry film on the substrate film layer;
carrying out partition exposure development on the photosensitive dry film to pattern a plurality of column planting openings exposing the substrate film layer on the photosensitive dry film;
sequentially planting a metal copper column and a tin ball salient point at the column planting opening to obtain a connecting column;
and removing the photosensitive dry film from the substrate film layer implanted with the connecting column.
7. The method for manufacturing the chip package structure according to claim 4, wherein before the encapsulating with the encapsulant, at least two of the first chip, the second chip and the pins are electrically connected by wires;
the method comprises the steps of forming a base film layer on a first surface of a second chip, and planting a copper metal column and a tin ball bump on the base film layer in sequence to obtain a plurality of connecting columns, wherein a plurality of second chips are integrated on the same wafer and are synchronously carried out in batch; and dicing the plurality of second chips from the wafer before the step of bonding the connection posts to the upper surface of the base island to secure the second chips to the base island.
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CN1638118A (en) * 2004-01-08 2005-07-13 松下电器产业株式会社 Semiconductor apparatus
CN101207114A (en) * 2006-12-20 2008-06-25 富士通株式会社 Semiconductor device and manufacturing method thereof
CN101661931A (en) * 2008-08-20 2010-03-03 桑迪士克股份有限公司 Semiconductor die support in an offset die stack
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