CN112117242B - Chip package structure and manufacturing method thereof - Google Patents
Chip package structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN112117242B CN112117242B CN201910536027.5A CN201910536027A CN112117242B CN 112117242 B CN112117242 B CN 112117242B CN 201910536027 A CN201910536027 A CN 201910536027A CN 112117242 B CN112117242 B CN 112117242B
- Authority
- CN
- China
- Prior art keywords
- chip
- film layer
- base island
- base
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000004806 packaging method and process Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000005022 packaging material Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract 7
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 238000003466 welding Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 5
- 239000008393 encapsulating agent Substances 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 238000005192 partition Methods 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 4
- 239000011800 void material Substances 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 13
- 239000003292 glue Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 230000008054 signal transmission Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- LVDRREOUMKACNJ-BKMJKUGQSA-N N-[(2R,3S)-2-(4-chlorophenyl)-1-(1,4-dimethyl-2-oxoquinolin-7-yl)-6-oxopiperidin-3-yl]-2-methylpropane-1-sulfonamide Chemical compound CC(C)CS(=O)(=O)N[C@H]1CCC(=O)N([C@@H]1c1ccc(Cl)cc1)c1ccc2c(C)cc(=O)n(C)c2c1 LVDRREOUMKACNJ-BKMJKUGQSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 210000002469 basement membrane Anatomy 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000009131 signaling function Effects 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- -1 argon ions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73257—Bump and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
技术领域technical field
本发明属于芯片封装技术领域,涉及一种芯片封装结构及其制造方法。The invention belongs to the technical field of chip packaging, and relates to a chip packaging structure and a manufacturing method thereof.
背景技术Background technique
现代电子信息技术飞速发展,电子产品向小型化、便携化、多功能化方向发展,这驱使半导体封装产品具有小型化的发展趋势,这就需要封装设计最大限度地利用封装空间,缩小半导体封装产品的尺寸。With the rapid development of modern electronic information technology, electronic products are developing in the direction of miniaturization, portability and multi-function, which drives the development trend of miniaturization of semiconductor packaging products, which requires packaging design to maximize the use of packaging space and reduce the size of semiconductor packaging products size of.
现有的封装结构中,当具有多个芯片时,通常会出现在一个芯片上堆叠另一个芯片的情况,为错开打线路径,避免引线碰线而造成不良的问题,通常上一个芯片会出现部分悬空的现象,为了避免悬空区域在打线时出现芯片破碎、断裂的问题,需要在芯片悬空区域下方设置垫片来支撑、架高悬空的芯片。以图1和图2所示具有两个芯片(芯片211和芯片212)的封装结构200为例,该封装结构200还包括引线框架和多条引线230,所述引线框架具体包括基岛221和管脚222,基岛221用于固定支撑芯片211和芯片212。其中,芯片211、芯片212、管脚222的中的两两之间可以通过引线230实现电性连接。如前所述,芯片212通过垫片250架高,芯片212悬空区域在打线时出现芯片破碎、断裂的问题。In the existing packaging structure, when there are multiple chips, it usually occurs that another chip is stacked on top of one chip. In order to stagger the wiring path and avoid the bad problem caused by the lead wire touching the wire, usually the previous chip will appear The phenomenon of partial suspension, in order to avoid chip breakage and breakage in the suspension area during wiring, it is necessary to set up a gasket under the suspension area of the chip to support and elevate the suspended chip. Taking the
但是,现有的封装结构,如图,芯片212通过垫片250架高后,垫片250和位于下层的芯片211之间通常留有一定狭缝S,在制造过程的包封工序时,封装料240需从狭缝S的两端S1、S2向狭缝S内回包,往往导致狭缝S内气体因无法正常排出而造成气体残留,进而产生空洞问题,影响产品质量。However, in the existing packaging structure, as shown in the figure, after the
发明内容Contents of the invention
为解决现有技术中芯片架高后包封时气体残留造成的空洞问题,本发明的目的在于提供一种芯片封装结构及其制造方法,其能够在芯片架高的同时,避免空洞现象的发生。In order to solve the problem of voids caused by gas residues in the prior art when the chip is elevated and packaged, the purpose of the present invention is to provide a chip packaging structure and a manufacturing method thereof, which can avoid the occurrence of voids while the chip is elevated .
为实现上述发明目的之一,本发明一实施方式提供了一种芯片封装结构,包括基岛、封装料、贴装在所述基岛上表面的第一芯片以及相较于所述第一芯片远离所述基岛的上表面布设的第二芯片,所述芯片封装结构还包括基底膜层和多个连接柱,所述基底膜层设于所述第二芯片的下表面,所述连接柱的上端植设于所述基底膜层且其下端焊接于所述基岛的上表面,所述封装料包封所述第一芯片和所述第二芯片并填充于所述基岛和所述第二芯片之间。In order to achieve one of the objectives of the above invention, an embodiment of the present invention provides a chip packaging structure, including a base island, a packaging material, a first chip mounted on the upper surface of the base island, and a The second chip arranged away from the upper surface of the base island, the chip packaging structure also includes a base film layer and a plurality of connecting posts, the base film layer is arranged on the lower surface of the second chip, and the connecting posts The upper end is planted on the base film layer and the lower end is welded on the upper surface of the base island, the encapsulation material encapsulates the first chip and the second chip and fills the base island and the between the second chips.
作为本发明一实施方式的进一步改进,任意两个所述连接柱彼此分离不相接触。As a further improvement of an embodiment of the present invention, any two connecting posts are separated from each other and do not contact each other.
作为本发明一实施方式的进一步改进,所述基底膜层设置为溅镀金属薄膜;As a further improvement in one embodiment of the present invention, the base film layer is set as a sputtered metal film;
所述连接柱包括金属柱和植于所述金属柱下端的凸点,所述连接柱通过所述凸点焊接于所述基岛的上表面。The connection post includes a metal post and a bump planted on the lower end of the metal post, and the connection post is welded to the upper surface of the base island through the bump.
作为本发明一实施方式的进一步改进,所述第二芯片的上表面为电信号功能面;所述第一芯片的上表面为电信号功能面;As a further improvement of an embodiment of the present invention, the upper surface of the second chip is an electrical signal functional surface; the upper surface of the first chip is an electrical signal functional surface;
所述封装结构还包括管脚,所述第二芯片、所述管脚、所述第一芯片的中任意两者之间通过引线建立电性连接;The packaging structure further includes pins, and any two of the second chip, the pins, and the first chip are electrically connected through wires;
所述封装料还包封所述引线并覆盖所述管脚的上表面。The encapsulation compound also encapsulates the leads and covers the upper surface of the pins.
作为本发明一实施方式的进一步改进,所述第一芯片通过装片胶贴装在所述基岛的上表面;As a further improvement of an embodiment of the present invention, the first chip is mounted on the upper surface of the base island by a die-mount adhesive;
所述第二芯片的一部分与所述第一芯片的一部分上下重叠布设,且二者之间填充有装片胶。A part of the second chip and a part of the first chip are overlapped up and down, and a mounting glue is filled between the two.
为实现上述发明目的之一,本发明一实施方式还提供了一种芯片封装结构的制造方法,包括:In order to achieve one of the purposes of the above invention, an embodiment of the present invention also provides a method for manufacturing a chip packaging structure, including:
在第二芯片的第一表面成型出基底膜层;forming a base film layer on the first surface of the second chip;
在所述基底膜层上植设多个连接柱;planting a plurality of connection posts on the basement membrane layer;
将第一芯片贴装于基岛的上表面;mounting the first chip on the upper surface of the base island;
将所述连接柱焊接至所述基岛的上表面,以使所述第二芯片固装至所述基岛;welding the connection post to the upper surface of the base island, so that the second chip is fixed to the base island;
利用封装料进行包封,以制得芯片封装结构。Encapsulating with an encapsulating material to obtain a chip encapsulating structure.
作为本发明一实施方式的进一步改进,步骤“在第二芯片的第一表面成型出基底膜层”包括:As a further improvement in one embodiment of the present invention, the step "forming a base film layer on the first surface of the second chip" includes:
在第二芯片的第二表面贴附保护膜,所述第二表面与所述第一表面相对设置且为第二芯片的电信号功能面;Attaching a protective film on the second surface of the second chip, the second surface is opposite to the first surface and is the electrical signal functional surface of the second chip;
研磨并超声波清洗所述第二芯片的第一表面;grinding and ultrasonically cleaning the first surface of the second chip;
在所述第二芯片的第一表面溅镀成型出基底膜层。A base film layer is formed by sputtering on the first surface of the second chip.
作为本发明一实施方式的进一步改进,步骤“在所述基底膜层上植设多个连接柱”包括:As a further improvement of one embodiment of the present invention, the step "implanting a plurality of connecting posts on the basement membrane layer" includes:
在所述基底膜层上布设感光干膜;Laying a photosensitive dry film on the base film layer;
对所述感光干膜进行分区曝光显影,使所述感光干膜图案化出暴露所述基底膜层的多个植柱开口;Partial exposure and development of the photosensitive dry film, so that the photosensitive dry film is patterned to form a plurality of pillar openings exposing the base film layer;
在所述植柱开口处先后植设金属柱和凸点,以得到连接柱;successively planting metal posts and bumps at the openings of the planting posts to obtain connecting posts;
从植有所述连接柱的所述基底膜层上去除所述感光干膜。removing the photosensitive dry film from the basement film layer planted with the connecting posts.
作为本发明一实施方式的进一步改进,任意两个所述连接柱彼此分离不相接触。As a further improvement of an embodiment of the present invention, any two connecting posts are separated from each other and do not contact each other.
作为本发明一实施方式的进一步改进,在利用所述封装料进行包封之前,将所述第一芯片、所述第二芯片、管脚的其中至少两个之间通过引线建立电性连接;As a further improvement of an embodiment of the present invention, before encapsulating with the encapsulation compound, at least two of the first chip, the second chip, and the pins are electrically connected through wires;
步骤“在第二芯片的第一表面成型出基底膜层”以及步骤“在所述基底膜层上植设多个连接柱”中,多个第二芯片集成于同一晶圆同步批量进行;并在步骤“将所述连接柱焊接至所述基岛的上表面,以使所述第二芯片固装至所述基岛”之前,将多个所述第二芯片自所述晶圆上切割分离开。In the step "forming a base film layer on the first surface of the second chip" and the step "planting a plurality of connection posts on the base film layer", multiple second chips are integrated on the same wafer and performed simultaneously in batches; and Slicing a plurality of the second chips from the wafer before the step of "soldering the connection posts to the upper surface of the base island so that the second chips are fixed to the base island" separated.
与现有技术相比,本发明的有益效果在于:通过设置所述基底膜层和植设多个所述连接柱,使需要架高的芯片(所述第二芯片)通过所述连接柱固装至所述基岛上,从而使得在所述封装料能够沿所述连接柱包饶并充盈至所述第二芯片和所述基岛之间的空隙中,避免现有技术中因两端回包而造成气体难以排出的情况发生,进而避免空洞现象,保证产品质量;另外,所述连接柱的上端植设于所述基底膜层且其下端焊接至所述基岛上,使得所述连接柱与所述第二芯片、所述基岛的连接稳固性强,避免所述连接柱脱落或移位,进一步保证产品质量。Compared with the prior art, the beneficial effect of the present invention is that: by setting the base film layer and planting a plurality of the connecting posts, the chip (the second chip) that needs to be elevated can be fixed through the connecting posts. mounted on the base island, so that the encapsulation material can cover and fill into the gap between the second chip and the base island along the connecting column, avoiding the two ends of the prior art Backpacking causes the gas to be difficult to discharge, thereby avoiding the void phenomenon and ensuring product quality; in addition, the upper end of the connecting column is planted on the base film layer and its lower end is welded to the base island, so that the The connections between the connection posts and the second chip and the base island are strong, which prevents the connection posts from falling off or shifting, and further ensures product quality.
附图说明Description of drawings
图1是现有技术中封装结构带局部透视效果的俯视图;Fig. 1 is a top view of a packaging structure with a partial perspective effect in the prior art;
图2是现有技术中封装结构的剖面示意图,其剖面沿图1中A-A所示;Fig. 2 is a schematic cross-sectional view of a package structure in the prior art, and its cross-section is shown along A-A in Fig. 1;
图3是本发明一实施方式的芯片封装结构带局部透视效果的俯视图;Fig. 3 is a top view of a chip package structure with a partial perspective effect according to an embodiment of the present invention;
图4a是本发明一实施方式的芯片封装结构的剖面示意图,其剖面沿图3中B-B所示;Fig. 4a is a schematic cross-sectional view of a chip package structure according to an embodiment of the present invention, and its cross-section is shown along B-B in Fig. 3;
图4b是图4a中C区域的放大图;Figure 4b is an enlarged view of area C in Figure 4a;
图5是本发明一实施方式的芯片封装结构的制造方法流程图;5 is a flowchart of a manufacturing method of a chip packaging structure according to an embodiment of the present invention;
图6是第二芯片的电信号功能面贴附保护膜的示意图;6 is a schematic diagram of attaching a protective film to the electrical signal functional surface of the second chip;
图7是对第二芯片的非电信号功能面进行研磨和清洗的示意图;Fig. 7 is a schematic diagram of grinding and cleaning the non-electric signal functional surface of the second chip;
图8是第二芯片的非电信号功能面成型出基底膜层的示意图;8 is a schematic diagram of forming a base film layer on the non-electrical signal functional surface of the second chip;
图9是基底膜层上涂覆感光干膜的示意图;Fig. 9 is a schematic diagram of coating a photosensitive dry film on the base film layer;
图10a是曝光显影后感光干膜实现图案化的示意图;Figure 10a is a schematic diagram of the patterning of the photosensitive dry film after exposure and development;
图10b是曝光显影后感光干膜实现图案化的俯视图;Figure 10b is a top view of patterning of the photosensitive dry film after exposure and development;
图11是植柱开口处植设连接柱的示意图;Fig. 11 is a schematic diagram of planting a connecting column at the opening of the planting column;
图12是剥离掉感光干膜的示意图;Figure 12 is a schematic diagram of peeling off the photosensitive dry film;
图13是第一芯片贴装至基岛上的示意图;Fig. 13 is a schematic diagram of attaching the first chip to the base island;
图14是第二芯片固装至基岛上的示意图;Fig. 14 is a schematic diagram of the second chip being mounted on the base island;
图15是在第一芯片、第二芯片、管脚之间连接引线的示意图;Fig. 15 is a schematic diagram of connecting leads between the first chip, the second chip, and pins;
图16是包封后形成的芯片封装结构的示意图;FIG. 16 is a schematic diagram of a chip package structure formed after encapsulation;
图17是本发明另一实施方式中晶圆切割为多个第二芯片的示意图。FIG. 17 is a schematic diagram of cutting a wafer into a plurality of second chips in another embodiment of the present invention.
具体实施方式Detailed ways
以下将结合附图所示的具体实施方式对本发明进行详细描述。但这些实施方式并不限制本发明,本领域的普通技术人员根据这些实施方式所做出的结构、方法、或功能上的变换均包含在本发明的保护范围内。The present invention will be described in detail below in conjunction with specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to these embodiments are included in the protection scope of the present invention.
需要说明的是,本文使用的表示空间方位的“上”、“上”等术语是基于图示位置关系,其出于便于说明的目的来描述如附图中所示的一个单元或特征相对于另一个单元或特征的关系;空间相对位置的术语可以旨在包括产品在使用或工作中除了图中所示方位以外的不同方位,例如,如果将图中的产品翻转,则被描述为位于其他单元或特征“下方”或“下侧”的单元将位于其他单元或特征“上方”。It should be noted that terms such as "upper" and "upper" used herein to indicate spatial orientation are based on the positional relationship in the diagram, which describes a unit or feature as shown in the drawings relative to Relationship to another unit or feature; terms of spatial relative position may be intended to cover different orientations of a product in use or operation than that shown in the drawings, for example, if a product in a drawing is turned over, it is described as being located in another A unit that is "below" or "below" a unit or feature will be located "above" another unit or feature.
参看图3、图4a以及图4b,本发明一实施方式提供的一种芯片封装结构100,其在附图中以两个芯片(第一芯片10和第二芯片20)的方式予以示意,但其芯片数目不限于此,可以设置为两个或两个以上的任意数目。并且,为便于说明,在图3中以第二芯片20透视效果予以示意。Referring to Fig. 3, Fig. 4a and Fig. 4b, a
具体地,芯片封装结构100包括第一芯片10、第二芯片20、引线框架、若干条引线70以及封装料60。Specifically, the
所述引线框架包括基岛30和围绕于基岛30四周的若干管脚40。The lead frame includes a
其中,基岛30对第一芯片10和第二芯片20起固定支撑作用。Wherein, the
具体地,第一芯片10贴装于基岛30的上表面。本实施例中,第一芯片10通过装片胶80紧密粘贴固定在基岛30的上表面,一方面,装片胶80可使得第一芯片10与基岛30之间无组装接缝,另一方面,基岛11四周边缘处具有供装片胶80溢胶的区域。其中,装片胶80优选设置为银胶。Specifically, the
第一芯片10的下表面为非电信号功能面,第一芯片10的下表面粘贴固定在基岛30的上表面。The lower surface of the
相对应的,第一芯片10的上表面为电信号功能面,也即第一芯片10的上表面可设置供电信号传输的铝垫/其他端子。第一芯片10的上表面焊接有引线70,从而使第一芯片10与其他部件(如第二芯片20、管脚40等)之间形成电信号传输电路。Correspondingly, the upper surface of the
第二芯片20也相对固定地连接至基岛30的上表面,其相较于第一芯片10远离基岛30的上表面布设。也即,第二芯片20和第一芯片10均位于基岛30的上方,且第二芯片20架高设置,第二芯片20的下表面与基岛30上表面之间的距离大于第一芯片10的下表面与基岛30上表面之间的距离。这样,在上下方向上,第二芯片20和第一芯片10的布设呈现层次性,从而避免如背景技术所提的碰线问题。The
管脚40、第一芯片10、第二芯片20的至少其中两者之间通过引线70电性连接,从而形成芯片封装结构10所需的电信号传输电路。在本实施例中,管脚40、第一芯片10、第二芯片20的任意两者之间均通过引线70电性连接。At least two of the
具体地,管脚40的上表面具有导电膜层41,引线70焊连至导电膜层41,以使管脚40与第一芯片10、管脚40与第二芯片20实现电性连接。优选在本实施例中,导电膜层41设置为镀银膜层,当然不限于此。Specifically, the upper surface of the
封装料60用于包封第一芯片10、第二芯片20以及引线70,以对第一芯片10、第二芯片20以及引线70进行保护。优选地,封装料60还包覆所述引线框架的全部上方区域,其下端面与所述引线框架的下表面齐平,以使得封装料60包封第一芯片10、第二芯片20以及引线70,且同时覆盖基岛30的上表面和管脚30的上表面,基岛30的下表面和管脚30的下表面暴露在封装料60之外。The
在本发明中,芯片封装结构100还包括基底膜层52以及连接柱51。In the present invention, the
基底膜层52设于第二芯片20的下表面,其与第二芯片20的下表面稳固连接。在具体实施时,基底膜层52可以布设于第二芯片20的下表面的全部区域,也可以根据需要布设于第二芯片20的下表面的局部区域,这些实施方式均未脱离本发明的技艺宗旨。The
连接柱51的数目设置为多个,其具体可以为3个或3个以上的任意数目,在附图中示例为9个,但不限于此;并且,后文结合附图的描述中,任意两个连接柱51以大致相同的结构予以示例,但不限于此,在不影响实施效果的情况下,其中部分或全部连接柱51可以设置为彼此结构不同。The number of connecting
连接柱51的上端植设于基底膜层52,连接强度大,结构稳定不易脱落/断裂,具体可采用电镀、蒸镀、溅镀、沉积等工艺植设于基底膜层52;连接柱51的下端焊接至基岛30的上表面,也即,连接柱51下端和基岛30的上表面通过焊接方式进行固定连接,同样连接强度大,结构稳定不易脱落/断裂。The upper end of the connecting
这样,通过设置基底膜层52以及植设多个连接柱51,使第二芯片20在架高的同时通过连接柱51固装至基岛30上,进而封装料60可包饶在连接柱51周围,并能够充盈至第二芯片20和基岛30之间的空隙S0中,利于空隙S0中的气体在包封过程中顺利排出,避免空洞现象的发生,保证产品质量;另外,连接柱51与第二芯片20、基岛30可稳固连接,避免连接柱51发生脱落或移位,进一步保证产品质量。In this way, by setting the
优选地,在本发明一实施方式中,任意两个连接柱51彼此分离不相接触,以使得第二芯片20和基岛30之间的空隙S0全部区域相连通成一体,这样可进一步保证在包封工序中,封装料60能够有效填满第二芯片20和基岛30之间的空隙S0,避免因气体无法排出而造成的空洞问题。Preferably, in one embodiment of the present invention, any two connecting
进一步地,第二芯片20的上表面为电信号功能面,也即第二芯片20的上表面可设置供电信号传输的铝垫/其他端子。第二芯片20的上表面焊接有引线70,从而使第二芯片20与其他部件(如第一芯片10、管脚40等)之间形成电信号传输电路。Further, the upper surface of the
相对应的,第二芯片20的下表面为非电信号功能面,第二芯片20的下表面通过溅镀工艺形成基底膜层52,换句话说,在本实施例中,基底膜层52设为溅镀金属薄膜,具体可为溅镀铜薄膜。Correspondingly, the lower surface of the
进一步地,连接柱51包括金属柱511和凸点512。Further, the
其中,金属柱511起到支撑固定的作用,其构成连接柱51的上端,具体可采用电镀、蒸镀、溅镀、沉积等工艺植设于基底膜层52上;在本实施例中,金属柱511可设置为铜柱。Among them, the
凸点512植于金属柱511的下端,其构成连接柱51的下端,连接柱51通过凸点512焊接于基岛30的上表面;在本实施例中,凸点512设置为锡球。The
进一步地,第二芯片20的下表面与基岛30上表面之间的距离不小于第一芯片10的上表面与基岛30上表面之间的距离。换句话说,第二芯片20位于第一芯片10的上方,第二芯片20的一部分与第一芯片10的一部分上下重叠且二者之间填充有装片胶80(如银胶),以使第二芯片20和第一芯片10彼此固定组装且避免组装缝隙的产生。Further, the distance between the lower surface of the
进一步地,本发明一实施方式还提供了一种芯片封装结构的制造方法,其可用于生成制造前述的芯片封装结构100,当然,在变化的实施情况下,采用所述制造方法所制得的芯片封装结构产品可以不仅仅限于前述芯片封装结构100。下面,参附图5,所述制造方法包括以下步骤:Further, an embodiment of the present invention also provides a method for manufacturing a chip package structure, which can be used to generate and manufacture the aforementioned
在第二芯片的第一表面成型出基底膜层;forming a base film layer on the first surface of the second chip;
在所述基底膜层上植设多个连接柱;planting a plurality of connection posts on the basement membrane layer;
将第一芯片贴装于基岛的上表面;mounting the first chip on the upper surface of the base island;
将所述连接柱焊接至所述基岛的上表面,以使所述第二芯片固装至所述基岛;welding the connection post to the upper surface of the base island, so that the second chip is fixed to the base island;
利用封装料进行包封,以制得芯片封装结构。Encapsulating with an encapsulating material to obtain a chip encapsulating structure.
这样,通过设置所述基底膜层和植设多个所述连接柱,使需要架高的芯片(所述第二芯片)通过所述连接柱固装至所述基岛上,从而使得在所述封装料能够沿所述连接柱包饶并充盈至所述第二芯片和所述基岛之间的空隙中,使包封工序中所述连接柱周围的空隙中的气体能够顺利排出,进而避免空洞现象,保证产品质量;另外,所述连接柱的上端植设于所述基底膜层且其下端焊接至所述基岛上,使得所述连接柱与所述第二芯片、所述基岛的连接稳固性强,避免所述连接柱脱落或移位,进一步保证产品质量。In this way, by setting the base film layer and planting a plurality of the connection posts, the chip (the second chip) that needs to be elevated is fixed on the base island through the connection posts, so that the The encapsulation compound can cover and fill into the gap between the second chip and the base island along the connecting post, so that the gas in the space around the connecting post can be discharged smoothly during the encapsulation process, and then Avoid voids and ensure product quality; in addition, the upper end of the connecting post is planted on the base film layer and its lower end is welded to the base island, so that the connecting post is connected to the second chip, the base The connection stability of the island is strong, which prevents the connection column from falling off or shifting, and further ensures the product quality.
需要说明的是,所述制造方法中,除非存在必要的依附关系,各步骤之间的实施顺序不限定于上述语序顺序:例如,步骤“将第一芯片贴装于基岛的上表面”虽然在描述语序上在步骤“在第二芯片的第一表面成型出基底膜层”之后,但步骤“将第一芯片贴装于基岛的上表面”不限定于必须晚于步骤“在第二芯片的第一表面成型出基底膜层”实施。It should be noted that, in the manufacturing method, unless there is a necessary dependency relationship, the execution order of the steps is not limited to the above word order: for example, the step "attach the first chip on the upper surface of the base island" although In the descriptive sequence, it is after the step "form the base film layer on the first surface of the second chip", but the step "attach the first chip on the upper surface of the base island" is not limited to be later than the step "on the second Forming a base film layer on the first surface of the chip" is implemented.
下面,以芯片封装结构100为例,结合附图6至图16所示实施例,对所述制造方法的各个步骤进行介绍。Next, taking the
步骤(1),在第二芯片20的第一表面201成型出基底膜层52。Step (1), forming a
关于步骤(1),第二芯片20包括相对设置的第一表面201和第二表面,第一表面201对应于芯片封装结构100中第二芯片201的下表面,优选为第二芯片20的非电信号功能面;相对应的,第二芯片20的所述第二表面对应于芯片封装结构100中第二芯片201的上表面,优选为第二芯片20的电信号功能面,也即所述第二表面可设置供电信号传输的铝垫/其他端子,以供与引线70焊连。Regarding step (1), the
具体地,步骤(1)包括以下子步骤:Specifically, step (1) includes the following sub-steps:
子步骤S1,贴膜Sub-step S1, film
参图6,在第二芯片20的所述第二表面贴附保护膜1,这样,可以利用保护膜1对所述第二表面进行保护,以避免暴露于所述第二表面的铝垫、端子等电信号功能件在后续步骤操作中受到损伤。Referring to Fig. 6, a
子步骤S2,表面清理Sub-step S2, surface cleaning
参图7,贴附保护膜1之后,一方面,研磨第二芯片20的第一表面201,以使第一平面201平整化和达到需要的芯片厚度,另一方面,采用超声波清洗第二芯片20的第一表面201,以去除第一表面201的杂质和异物,这样,可从而为后续在第一表面201成型出基底膜层52做好准备,保证基底膜层52的成型效果和稳定性;其中优选地超声波清洗可在研磨完成后再实施,以便于把研磨时的残留物清洗干净。Referring to Fig. 7, after attaching the
子步骤S3,镀膜Sub-step S3, coating
参图8,完成对第二芯片20的第一表面201的表面清理后,在第一表面201镀设出基底膜层52,通过镀设出的基底膜层52可以稳定地连接第二芯片20的第一表面201,其作为后续植柱的基底,可增加连接结构强度。Referring to FIG. 8 , after the surface cleaning of the
优选地,基底膜层52可采用溅镀方式成型于第一表面201,具体过程为:在高真空的状态中充入氩气,在强电场作用下将氩气电离以产生氩正离子,并加速形成高能量的离子流轰击在靶材表面,使靶材原子脱离表面溅射(沉积)到第二芯片20的第一表面201,以形成基底膜层52。Preferably, the
进一步优选地,基底膜层52为溅镀金属薄膜,尤其是溅镀铜薄膜。Further preferably, the
另外,优选如本实施例中,基底膜层52布设于第二芯片20的第一表面201的几乎全部区域,当然在变化实施例中,基底膜层52还可以按需布设于第二芯片20的第一表面201的局部区域。In addition, preferably, as in this embodiment, the
步骤(2),在基底膜层52上植设多个连接柱51。Step (2), planting a plurality of
关于步骤(2),连接柱51的数目设置为多个,其具体可以为3个或3个以上的任意数目,在附图中示例为9个,但不限于此;并且,后文结合附图的描述中,任意两个连接柱51以大致相同的结构予以示例,但不限于此,在不影响实施效果的情况下,其中部分或全部连接柱51可以设置为彼此结构不同。Regarding step (2), the number of connecting
具体地,步骤(2)包括以下子步骤:Specifically, step (2) includes the following sub-steps:
子步骤S4,盖干膜Sub-step S4, cover dry film
参图9,在基底膜层52上设置感光干膜2,感光干膜2具体可采用涂覆工艺形成于基底膜层52上;可以理解的,感光干膜2位于基底膜层52背离第二芯片20的一侧,也即,基底膜层52位于感光干膜2和第二芯片20之间。9, a photosensitive
优选地,感光干膜2完全覆盖整个基底膜层52。Preferably, the photosensitive
子步骤S5,图案化Sub-step S5, patterning
参图10a和图10b,对感光干膜2进行分区曝光显影,使感光干膜2图案化出暴露基底膜层52的多个植柱开口T;也即,通过分区曝光显影技术,使感光干膜2图案化,图案化后的感光干膜2具有多个植柱开口T,植柱开口T暴露出基底膜层52,而除植柱开口T之外的剩余感光干膜2依旧覆盖并遮蔽基底膜层52。Referring to Fig. 10a and Fig. 10b, the photosensitive
具体地,图案化的详细过程可以为:在光刻板上刻画图形,将所述光刻板置于感光干膜2的一侧,所述光刻板可遮挡感光干膜2的部分区域并暴露感光干膜2的其余部分区域(即需要形成出植柱开口T的区域);通过高强度光线曝光,然后经过显影,以使感光干膜2被暴露在光线下的部分区域(即需要形成出植柱开口T的区域)去除,从而实现感光干膜2图案化。Specifically, the detailed process of patterning can be as follows: drawing a figure on a photoresist plate, placing the photoresist plate on one side of the photosensitive
子步骤S6,植柱Sub-step S6, planting pillars
参图11,在植柱开口T处先后植设金属柱511和凸点512。其中,具体可在植柱开口T处先通过电镀、蒸镀、溅镀、沉积等工艺植设金属柱511,该金属柱511优选为铜柱;之后,再在金属柱511的末端(对应于芯片封装结构100中金属柱511的下端)植设凸点512,凸点512优选为锡球。Referring to FIG. 11 ,
可以理解的,在进行金属柱511的植设之前,可先对植柱开口T处进行清洁,以去除后表面氧化物和残留物,使暴露于植柱开口T处的基底膜层52表面洁净,从而满足后续植柱要求,保证金属柱511与基底膜层52的连接强度。It can be understood that before the
子步骤S7,去干膜Sub-step S7, remove dry film
参图12,在植柱完成后,将附在基底膜层52上的感光干膜2去除,具体可采用机械剥离或清洁等方式去除。Referring to FIG. 12 , after the pillar planting is completed, the photosensitive
经过上述步骤(1)和步骤(2)之后,即可得到携载有基底膜层52、连接柱51以及保护膜1的第二芯片20,以备后用,具体在去除保护膜1后即可应用于后续的制造方法步骤中。After the above step (1) and step (2), the
步骤(3),采用装片胶80将第一芯片10贴装于基岛30的上表面301。In step (3), attach the
参图13,可结合图3,具体在基岛30的上表面301中心位置处喷洒或涂抹装片胶80,装片胶80具体可为银胶,之后第一芯片10压紧在装片胶80处以贴装至基岛30的上表面301,在压紧过程中,装片胶80会填满第一芯片10的下表面和基岛30的上表面301之间,以避免组装缝隙的产生。Referring to FIG. 13 , in combination with FIG. 3 , spray or smear a mounting
其中,第一芯片10的下表面为非电信号功能面,其粘贴固定在基岛30的上表面并被装片胶80所覆盖。相对应的,第一芯片10的上表面为电信号功能面,也即第一芯片10的上表面可设置供电信号传输的铝垫/其他端子,以供与引线70焊连。Wherein, the lower surface of the
进一步地,在该步骤(3)中,还可以在第一芯片10的上表面101的局部区域涂覆装片胶80,以备接下来辅助固定第二芯片20以及避免组装缝隙的产生(参后文)。Further, in this step (3), the mounting
步骤(4),将连接柱51焊接至基岛30的上表面301,以使第二芯片20固装至基岛30。In step (4), solder the connecting
参图14,具体地,将前述经步骤(1)和步骤(2)处理好的第二芯片20(也即携载基底膜层52和连接柱51的第二芯片20),从保护膜1上剥离,并扣贴至基岛30上方;也即,以连接柱51在下第二芯片20在上的方式的配置于基岛30上方。Referring to Fig. 14, specifically, the aforementioned
第二芯片20的一部分重叠贴合至第一芯片10的上表面101的装片胶80处,在具体实施中,第二芯片20与第一芯片10上下重叠的位置之间充满装片胶80,以稳固第二芯片20的安装位置,并避免组装缝隙;并且,连接柱51的下端焊接至基岛30的上表面301,具体是连接柱51的凸点512焊接至基岛30,这样通过焊接连接,可保证连接柱51位置稳定。A part of the
可以理解的,通过连接柱51,使得第二芯片20相较于第一芯片20架高设置,第二芯片20的下表面与基岛30的上表面301之间的距离大于第一芯片10的下表面与基岛30的上表面301之间的距离,并且第二芯片20和基岛30之间形成有围绕于连接柱51四周的空隙S0。It can be understood that the
步骤(5),将第一芯片10、第二芯片20、管脚40的其中至少两个之间通过引线70建立电性连接。In step (5), at least two of the
参图15,在本实施例中,管脚40的上表面具有导电膜层41,通过焊连引线70,使得管脚40与第一芯片10、管脚40与第二芯片20、第一芯片10和第二芯片20之间均实现电性连接。优选在本实施例中,导电膜层41设置为镀银膜层,当然不限于此。Referring to Fig. 15, in this embodiment, the upper surface of the
步骤(6),利用封装料60进行包封,以制得芯片封装结构100。Step (6), encapsulating with the
其中,基岛30和管脚40构成引线框架的至少部分;参图16,利用封装料60覆盖所述引线框架的全部上方区域,封装料60的下端面与所述引线框架的下表面齐平,如图示例中封装料60下端面与基岛30的下表面齐平,以使得封装料60在包封第一芯片10、第二芯片20以及引线70,并同时覆盖基岛30的上表面301和管脚30的上表面,基岛30的下表面和管脚30的下表面暴露在封装料60之外。Wherein, the
这样,即可制得芯片封装结构100,由此可得,通过在第二芯片20的下表面设置基底膜层52以及植设多个连接柱51,使第二芯片20在架高的同时通过连接柱51固装至基岛30上,在其制造过程的包封工序中,使得在封装料60包饶在连接柱51周围,并且能够充盈至第二芯片20和基岛30之间的空隙S0中,利于空隙S0中的气体在包封过程中顺利排出,避免空洞现象的发生,保证产品质量;另外,连接柱52与第二芯片20、基岛30可稳固连接,避免连接柱30发生脱落或移位,进一步,保证产品质量。In this way, the
进一步优选地,任意两个连接柱51彼此分离不相接触,以使得第二芯片20和基岛30之间的空隙S0全部区域相连通成一体,这样可进一步保证在包封工序中,封装料60能够有效填满第二芯片20和基岛30之间的空隙S0,避免因气体无法排出而造成的空洞问题。Further preferably, any two
需要再次重申的是,在本申请中,除非存在必要的依附关系,所述制造方法的各步骤之间的实施顺序不限定于上述语序顺序,并且本文中为了便于描述而对步骤进行的如“S1”、“S2”“(1)”、“(2)”等编号也并不意指各步骤的实施顺序,所述制造方法可以以合理可行的顺序对各步骤予以实施。例如,步骤(1)虽然在语序顺序上位于步骤(3)之前,并不限定于步骤(1)优先于步骤(3)予以实施;再例如,步骤(2)虽然在编号上位于步骤(1)、步骤(3)之间,并不限定于按照步骤(1)、步骤(2)、步骤(3)的顺序予以实施。It needs to be reiterated that in this application, unless there is a necessary dependency relationship, the implementation order of the steps of the manufacturing method is not limited to the above word order, and the steps are described herein as " Numbers such as S1", "S2", "(1)", and "(2)" do not imply the implementation order of each step, and the manufacturing method can implement each step in a reasonable and feasible order. For example, although step (1) is located before step (3) in word order, it is not limited to the implementation of step (1) prior to step (3); for another example, although step (2) is located in step (1) in numbering ), step (3), and are not limited to be implemented in the order of step (1), step (2), and step (3).
另外,在图6至图12所示的实施例中,步骤(1)以及步骤(2)中以单个第二芯片20的方式予以示例。当然,在变化实施例中,步骤(1)以及步骤(2),还优选地以多个第二芯片20集成于同一晶圆整体同步批量进行的方式予以实施,也即同一晶圆包括多个第二芯片20,同时对该多个第二芯片20同步进行步骤(1)和/或步骤(2)的操作,这样可以提高生产效率;相对应的,参图17所示,在步骤(1)以及步骤(2)实施完成后,在步骤(4)之前,可以将所述晶圆切割为携载有基底膜层52和多个连接柱51的多个第二芯片20,也即,将多个第二芯片20自所述晶圆上切割分离开,以便于步骤(4)中第二芯片20与基岛30进行组装。In addition, in the embodiments shown in FIG. 6 to FIG. 12 , step (1) and step (2) are illustrated in the form of a single
应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施方式中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。It should be understood that although this description is described according to implementation modes, not each implementation mode only contains an independent technical solution, and this description in the description is only for clarity, and those skilled in the art should take the description as a whole, and each The technical solutions in the embodiments can also be properly combined to form other embodiments that can be understood by those skilled in the art.
上文所列出的一系列的详细说明仅仅是针对本发明的可行性实施方式的具体说明,它们并非用以限制本发明的保护范围,凡未脱离本发明技艺精神所作的等效实施方式或变更均应包含在本发明的保护范围之内。The series of detailed descriptions listed above are only specific descriptions for feasible implementations of the present invention, and they are not intended to limit the protection scope of the present invention. Any equivalent implementation or implementation that does not depart from the technical spirit of the present invention All changes should be included within the protection scope of the present invention.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910536027.5A CN112117242B (en) | 2019-06-20 | 2019-06-20 | Chip package structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910536027.5A CN112117242B (en) | 2019-06-20 | 2019-06-20 | Chip package structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112117242A CN112117242A (en) | 2020-12-22 |
| CN112117242B true CN112117242B (en) | 2023-01-31 |
Family
ID=73795861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910536027.5A Active CN112117242B (en) | 2019-06-20 | 2019-06-20 | Chip package structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112117242B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114141761B (en) * | 2021-09-15 | 2025-08-22 | 长电科技(滁州)有限公司 | Stacked chip package and manufacturing method thereof |
| CN116153870A (en) * | 2023-04-21 | 2023-05-23 | 江苏长晶浦联功率半导体有限公司 | Stacked packaging structure and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638118A (en) * | 2004-01-08 | 2005-07-13 | 松下电器产业株式会社 | Semiconductor apparatus |
| CN101207114A (en) * | 2006-12-20 | 2008-06-25 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
| CN101661931A (en) * | 2008-08-20 | 2010-03-03 | 桑迪士克股份有限公司 | Semiconductor die support in an offset die stack |
| US20160035712A1 (en) * | 2011-10-20 | 2016-02-04 | Invensas Corporation | Microelectronic package with stacked microelectronic units and method for manufacture thereof |
-
2019
- 2019-06-20 CN CN201910536027.5A patent/CN112117242B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638118A (en) * | 2004-01-08 | 2005-07-13 | 松下电器产业株式会社 | Semiconductor apparatus |
| CN101207114A (en) * | 2006-12-20 | 2008-06-25 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
| CN101661931A (en) * | 2008-08-20 | 2010-03-03 | 桑迪士克股份有限公司 | Semiconductor die support in an offset die stack |
| US20160035712A1 (en) * | 2011-10-20 | 2016-02-04 | Invensas Corporation | Microelectronic package with stacked microelectronic units and method for manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112117242A (en) | 2020-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6774467B2 (en) | Semiconductor device and process of production of same | |
| JP2809115B2 (en) | Semiconductor device and manufacturing method thereof | |
| CN102543937B (en) | Flip chip on-chip package and manufacturing method thereof | |
| US7576402B2 (en) | Semiconductor device, method of manufacturing the same, and camera module | |
| CN102543907B (en) | Package and manufacture method for thermal enhanced quad flat no-lead flip chip | |
| JP3007833B2 (en) | Semiconductor device and its manufacturing method, lead frame and its manufacturing method | |
| US8222080B2 (en) | Fabrication method of package structure | |
| TW201131696A (en) | Integrated circuit packaging system with stacking interconnect and method of manufacture thereof | |
| TWI420646B (en) | Wiring electronic parts and manufacturing method thereof | |
| CN101675516A (en) | Has the chip that is connected to the rear side contact of front side contact by via hole | |
| CN109244231B (en) | Packaging structure and packaging method of acoustic surface filter chip | |
| CN101998213A (en) | Packaging structure of MEMS (Micro Electro Mechanical Systems) microphone and wafer packaging method thereof | |
| CN111063674A (en) | PoP three-dimensional packaging-oriented vertical interconnection structure and manufacturing method | |
| CN112117242B (en) | Chip package structure and manufacturing method thereof | |
| JP6631905B2 (en) | Multi-chip module and manufacturing method thereof | |
| JP7001445B2 (en) | Semiconductor devices and their manufacturing methods | |
| TWI853495B (en) | Electronic package module and method for fabrication of the same | |
| TWI887585B (en) | Semiconductor device with compartment shield formed from metal bars and manufacturing method thereof | |
| US11869844B2 (en) | Semiconductor device | |
| TWI515808B (en) | Method for manufacturing chip package structure | |
| JPH1079448A (en) | Semiconductor device, its manufacturing method, its mounting method, and lead frame and its manufacturing method | |
| TWI877970B (en) | Flat package component and method for manufacturing the same | |
| CN115346967B (en) | Three-dimensional stacked shielding structure and three-dimensional stacked shielding method | |
| TWI238507B (en) | Integrated circuit package substrate with presolder structure and method for fabricating the same | |
| JP7145414B2 (en) | Lead frame and its manufacturing method, and semiconductor device and its manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |